Showing 1–7 of 7 results for author: Oosterhout, S D

Exchange cross-talk mitigation in dense quantum dot arrays

Authors: Daniel Jirovec, Pablo Cova Fariña, Stefano Reale, Stefan D. Oosterhout, Xin Zhang, Elizaveta Morozova, Sander de Snoo, Amir Sammak, Giordano Scappucci, Menno Veldhorst, Lieven M. K. Vandersypen

Abstract: Coupled spins in semiconductor quantum dots are a versatile platform for quantum computing and simulations of complex many-body phenomena. However, on the path of scale-up, cross-talk from densely packed electrodes poses a severe challenge. While cross-talk onto the dot potentials is nowadays routinely compensated for, cross-talk on the exchange interaction is much more difficult to tackle because… ▽ More Coupled spins in semiconductor quantum dots are a versatile platform for quantum computing and simulations of complex many-body phenomena. However, on the path of scale-up, cross-talk from densely packed electrodes poses a severe challenge. While cross-talk onto the dot potentials is nowadays routinely compensated for, cross-talk on the exchange interaction is much more difficult to tackle because it is not always directly measurable. Here we propose and implement a way of characterizing and compensating cross-talk on adjacent exchange interactions by following the singlet-triplet avoided crossing in Ge. We show that we can easily identify the barrier-to-barrier cross-talk element without knowledge of the particular exchange value in a 2x4 quantum dot array. We uncover striking differences among these cross-talk elements which can be linked to the geometry of the device and the barrier gate fan-out. We validate the methodology by tuning up four-spin Heisenberg chains. The same methodology should be applicable to longer chains of spins and to other semiconductor platforms in which mixing of the singlet and the lowest-energy triplet is present or can be engineered. Additionally, this procedure is well suited for automated tuning routines as we obtain a stand-out feature that can be easily tracked and directly returns the magnitude of the cross-talk. △ Less

Submitted 31 March, 2025; originally announced March 2025.

Modular Autonomous Virtualization System for Two-Dimensional Semiconductor Quantum Dot Arrays

Authors: Anantha S. Rao, Donovan Buterakos, Barnaby van Straaten, Valentin John, Cécile X. Yu, Stefan D. Oosterhout, Lucas Stehouwer, Giordano Scappucci, Menno Veldhorst, Francesco Borsoi, Justyna P. Zwolak

Abstract: Arrays of gate-defined semiconductor quantum dots are among the leading candidates for building scalable quantum processors. High-fidelity initialization, control, and readout of spin qubit registers require exquisite and targeted control over key Hamiltonian parameters that define the electrostatic environment. However, due to the tight gate pitch, capacitive crosstalk between gates hinders indep… ▽ More Arrays of gate-defined semiconductor quantum dots are among the leading candidates for building scalable quantum processors. High-fidelity initialization, control, and readout of spin qubit registers require exquisite and targeted control over key Hamiltonian parameters that define the electrostatic environment. However, due to the tight gate pitch, capacitive crosstalk between gates hinders independent tuning of chemical potentials and interdot couplings. While virtual gates offer a practical solution, determining all the required cross-capacitance matrices accurately and efficiently in large quantum dot registers is an open challenge. Here, we establish a modular automated virtualization system (MAViS) -- a general and modular framework for autonomously constructing a complete stack of multilayer virtual gates in real time. Our method employs machine learning techniques to rapidly extract features from two-dimensional charge stability diagrams. We then utilize computer vision and regression models to self-consistently determine all relative capacitive couplings necessary for virtualizing plunger and barrier gates in both low- and high-tunnel-coupling regimes. Using MAViS, we successfully demonstrate accurate virtualization of a dense two-dimensional array comprising ten quantum dots defined in a high-quality Ge/SiGe heterostructure. Our work offers an elegant and practical solution for the efficient control of large-scale semiconductor quantum dot systems. △ Less

Submitted 6 May, 2025; v1 submitted 19 November, 2024; originally announced November 2024.

Comments: 14 pages, 5 figures, 9 pages of supplemental material

Journal ref: Phys. Rev. X 15, 021034 (2025)

Exploiting epitaxial strained germanium for scaling low noise spin qubits at the micron-scale

Authors: Lucas E. A. Stehouwer, Cécile X. Yu, Barnaby van Straaten, Alberto Tosato, Valentin John, Davide Degli Esposti, Asser Elsayed, Davide Costa, Stefan D. Oosterhout, Nico W. Hendrickx, Menno Veldhorst, Francesco Borsoi, Giordano Scappucci

Abstract: Disorder in the heterogeneous material stack of semiconductor spin qubit systems introduces noise that compromises quantum information processing, posing a challenge to coherently control large-scale quantum devices. Here, we exploit low-disorder epitaxial strained quantum wells in Ge/SiGe heterostructures grown on Ge wafers to comprehensively probe the noise properties of complex micron-scale dev… ▽ More Disorder in the heterogeneous material stack of semiconductor spin qubit systems introduces noise that compromises quantum information processing, posing a challenge to coherently control large-scale quantum devices. Here, we exploit low-disorder epitaxial strained quantum wells in Ge/SiGe heterostructures grown on Ge wafers to comprehensively probe the noise properties of complex micron-scale devices comprising of up to ten quantum dots and four rf-charge sensors arranged in a two-dimensional array. We demonstrate an average charge noise of $\sqrt{S_{0}}=0.3(1)$ $μ\mathrm{eV}/\sqrt{\mathrm{Hz}}$ at 1 Hz across different locations on the wafer, providing a benchmark for quantum confined holes. We then establish hole-spin qubit control in these heterostructures and extend our investigation from electrical to magnetic noise through spin echo measurements. Exploiting dynamical decoupling sequences, we quantify the power spectral density components arising from the hyperfine interaction with $^{73}$Ge spinful isotopes and identify coherence modulations associated with the interaction with the $^{29}$Si nuclear spin bath near the Ge quantum well. We estimate an integrated hyperfine noise amplitude $σ_f$ of 180(8) kHz from $^{73}$Ge and of 47(5) kHz from $^{29}$Si, underscoring the need for full isotopic purification of the qubit host environment. △ Less

Submitted 17 February, 2025; v1 submitted 18 November, 2024; originally announced November 2024.

Operating semiconductor quantum processors with hopping spins

Authors: Chien-An Wang, Valentin John, Hanifa Tidjani, Cécile X. Yu, Alexander S. Ivlev, Corentin Déprez, Floor van Riggelen-Doelman, Benjamin D. Woods, Nico W. Hendrickx, William I. L. Lawrie, Lucas E. A. Stehouwer, Stefan D. Oosterhout, Amir Sammak, Mark Friesen, Giordano Scappucci, Sander L. de Snoo, Maximilian Rimbach-Russ, Francesco Borsoi, Menno Veldhorst

Abstract: Qubits that can be efficiently controlled are essential for the development of scalable quantum hardware. While resonant control is used to execute high-fidelity quantum gates, the scalability is challenged by the integration of high-frequency oscillating signals, qubit crosstalk and heating. Here, we show that by engineering the hopping of spins between quantum dots with site-dependent spin quant… ▽ More Qubits that can be efficiently controlled are essential for the development of scalable quantum hardware. While resonant control is used to execute high-fidelity quantum gates, the scalability is challenged by the integration of high-frequency oscillating signals, qubit crosstalk and heating. Here, we show that by engineering the hopping of spins between quantum dots with site-dependent spin quantization axis, quantum control can be established with discrete signals. We demonstrate hopping-based quantum logic and obtain single-qubit gate fidelities of 99.97\%, coherent shuttling fidelities of 99.992\% per hop, and a two-qubit gate fidelity of 99.3\%, corresponding to error rates that have been predicted to allow for quantum error correction. We also show that hopping spins constitute a tuning method by statistically mapping the coherence of a 10-quantum dot system. Our results show that dense quantum dot arrays with sparse occupation could be developed for efficient and high-connectivity qubit registers. △ Less

Submitted 15 October, 2024; v1 submitted 28 February, 2024; originally announced February 2024.

Comments: main text with 18 pages and 3 figures, supplementary materials with 64 pages and 26 figures, in a single file

Universal control of four singlet-triplet qubits

Authors: Xin Zhang, Elizaveta Morozova, Maximilian Rimbach-Russ, Daniel Jirovec, Tzu-Kan Hsiao, Pablo Cova Fariña, Chien-An Wang, Stefan D. Oosterhout, Amir Sammak, Giordano Scappucci, Menno Veldhorst, Lieven M. K. Vandersypen

Abstract: The coherent control of interacting spins in semiconductor quantum dots is of strong interest for quantum information processing as well as for studying quantum magnetism from the bottom up. Here, we present a $2\times4$ germanium quantum dot array with full and controllable interactions between nearest-neighbor spins. As a demonstration of the level of control, we define four singlet-triplet qubi… ▽ More The coherent control of interacting spins in semiconductor quantum dots is of strong interest for quantum information processing as well as for studying quantum magnetism from the bottom up. Here, we present a $2\times4$ germanium quantum dot array with full and controllable interactions between nearest-neighbor spins. As a demonstration of the level of control, we define four singlet-triplet qubits in this system and show two-axis single-qubit control of each qubit and SWAP-style two-qubit gates between all neighbouring qubit pairs, yielding average single-qubit gate fidelities of 99.49(8)-99.84(1)% and Bell state fidelities of 73(1)-90(1)%. Combining these operations, we experimentally implement a circuit designed to generate and distribute entanglement across the array. A remote Bell state with a fidelity of 75(2)% and concurrence of 22(4)% is achieved. These results highlight the potential of singlet-triplet qubits as a competing platform for quantum computing and indicate that scaling up the control of quantum dot spins in extended bilinear arrays can be feasible. △ Less

Submitted 23 July, 2024; v1 submitted 26 December, 2023; originally announced December 2023.

Comments: In the updated version, data on single- and two-qubit gate fidelities, as well as two-qubit Bell state fidelities, have been added

Exciton transport in a germanium quantum dot ladder

Authors: T. -K. Hsiao, P. Cova Fariña, S. D. Oosterhout, D. Jirovec, X. Zhang, C. J. van Diepen, W. I. L. Lawrie, C. -A. Wang, A. Sammak, G. Scappucci, M. Veldhorst, E. Demler, L. M. K. Vandersypen

Abstract: Quantum systems with engineered Hamiltonians can be used as simulators of many-body physics problems to provide insights beyond the capabilities of classical computers. Semiconductor gate-defined quantum dot arrays have emerged as a versatile platform for quantum simulation of generalized Fermi-Hubbard physics, one of the richest playgrounds in condensed matter physics. In this work, we employ a g… ▽ More Quantum systems with engineered Hamiltonians can be used as simulators of many-body physics problems to provide insights beyond the capabilities of classical computers. Semiconductor gate-defined quantum dot arrays have emerged as a versatile platform for quantum simulation of generalized Fermi-Hubbard physics, one of the richest playgrounds in condensed matter physics. In this work, we employ a germanium 4$\times$2 quantum dot array and show that the naturally occurring long-range Coulomb interaction can lead to exciton formation and transport. We tune the quantum dot ladder into two capacitively-coupled channels and exploit Coulomb drag to probe the binding of electrons and holes. Specifically, we shuttle an electron through one leg of the ladder and observe that a hole is dragged along in the second leg under the right conditions. This corresponds to a transition from single-electron transport in one leg to exciton transport along the ladder. Our work paves the way for the study of excitonic states of matter in quantum dot arrays. △ Less

Submitted 5 July, 2023; originally announced July 2023.

Comments: 15 pages and 13 figures

Journal ref: Phys. Rev. X 14, 011048 (2024)

Spatial modeling of the 3D morphology of hybrid polymer-ZnO solar cells, based on electron tomography data

Authors: O. Stenzel, V. Schmidt, H. Hassfeld, R. Thiedmann, L. J. A. Koster, S. D. Oosterhout, S. S. van Bavel, M. M. Wienk, J. Loos, R. A. J. Janssen

Abstract: A spatial stochastic model is developed which describes the 3D nanomorphology of composite materials, being blends of two different (organic and inorganic) solid phases. Such materials are used, for example, in photoactive layers of hybrid polymer zinc oxide solar cells. The model is based on ideas from stochastic geometry and spatial statistics. Its parameters are fitted to image data gained by e… ▽ More A spatial stochastic model is developed which describes the 3D nanomorphology of composite materials, being blends of two different (organic and inorganic) solid phases. Such materials are used, for example, in photoactive layers of hybrid polymer zinc oxide solar cells. The model is based on ideas from stochastic geometry and spatial statistics. Its parameters are fitted to image data gained by electron tomography (ET), where adaptive thresholding and stochastic segmentation have been used to represent morphological features of the considered ET data by unions of overlapping spheres. Their midpoints are modeled by a stack of 2D point processes with a suitably chosen correlation structure, whereas a moving-average procedure is used to add the radii of spheres. The model is validated by comparing physically relevant characteristics of real and simulated data, like the efficiency of exciton quenching, which is important for the generation of charges and their transport toward the electrodes. △ Less

Submitted 22 November, 2011; originally announced November 2011.

Comments: Published in at http://dx.doi.org/10.1214/11-AOAS468 the Annals of Applied Statistics (http://www.imstat.org/aoas/) by the Institute of Mathematical Statistics (http://www.imstat.org)

Report number: IMS-AOAS-AOAS468

Journal ref: Annals of Applied Statistics 2011, Vol. 5, No. 3, 1920-1947