Low-threshold optically pumped lasing in highly strained Ge nanowires
Authors:
Shuyu Bao,
Daeik Kim,
Chibuzo Onwukaeme,
Shashank Gupta,
Krishna Saraswat,
Kwang Hong Lee,
Yeji Kim,
Dabin Min,
Yongduck Jung,
Haodong Qiu,
Hong Wang,
Eugene A. Fitzgerald,
Chuan Seng Tan,
Donguk Nam
Abstract:
The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the key to the realization of fully functional photonic-integrated circuits. Despite several years of progress, however, all group IV lasers reported to date exhibit impractically high thresholds owing to their unfavorable bandstructures. Highly strained germanium with its fundamentally altered bandstructure ha…
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The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the key to the realization of fully functional photonic-integrated circuits. Despite several years of progress, however, all group IV lasers reported to date exhibit impractically high thresholds owing to their unfavorable bandstructures. Highly strained germanium with its fundamentally altered bandstructure has emerged as a potential low-threshold gain medium, but there has yet to be any successful demonstration of lasing from this seemingly promising material system. Here, we demonstrate a low-threshold, compact group IV laser that employs germanium nanowire under a 1.6% uniaxial tensile strain as the gain medium. The amplified material gain in strained germanium can sufficiently surmount optical losses at 83 K, thus allowing the first observation of multimode lasing with an optical pumping threshold density of ~3.0 kW cm^-^2. Our demonstration opens up a new horizon of group IV lasers for photonic-integrated circuits.
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Submitted 15 August, 2017;
originally announced August 2017.
