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Machine Learning for Improved Current Density Reconstruction from 2D Vector Magnetic Images
Authors:
Niko R. Reed,
Danyal Bhutto,
Matthew J. Turner,
Declan M. Daly,
Sean M. Oliver,
Jiashen Tang,
Kevin S. Olsson,
Nicholas Langellier,
Mark J. H. Ku,
Matthew S. Rosen,
Ronald L. Walsworth
Abstract:
The reconstruction of electrical current densities from magnetic field measurements is an important technique with applications in materials science, circuit design, quality control, plasma physics, and biology. Analytic reconstruction methods exist for planar currents, but break down in the presence of high spatial frequency noise or large standoff distance, restricting the types of systems that…
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The reconstruction of electrical current densities from magnetic field measurements is an important technique with applications in materials science, circuit design, quality control, plasma physics, and biology. Analytic reconstruction methods exist for planar currents, but break down in the presence of high spatial frequency noise or large standoff distance, restricting the types of systems that can be studied. Here, we demonstrate the use of a deep convolutional neural network for current density reconstruction from two-dimensional (2D) images of vector magnetic fields acquired by a quantum diamond microscope (QDM) utilizing a surface layer of Nitrogen Vacancy (NV) centers in diamond. Trained network performance significantly exceeds analytic reconstruction for data with high noise or large standoff distances. This machine learning technique can perform quality inversions on lower SNR data, reducing the data collection time by a factor of about 400 and permitting reconstructions of weaker and three-dimensional current sources.
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Submitted 11 January, 2025; v1 submitted 18 July, 2024;
originally announced July 2024.
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Hardware Trojan Detection Potential and Limits with the Quantum Diamond Microscope
Authors:
Jacob N. Lenz,
Scott K. Perryman,
Dmitro J. Martynowych,
David A. Hopper,
Sean M. Oliver
Abstract:
The Quantum Diamond Microscope (QDM) is an instrument with a demonstrated capability to image electrical current in integrated circuits (ICs), which shows promise for detection of hardware Trojans. The anomalous current activity caused by hardware Trojans manifests through a magnetic field side channel that can be imaged with the QDM, potentially allowing for detection and localization of the effe…
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The Quantum Diamond Microscope (QDM) is an instrument with a demonstrated capability to image electrical current in integrated circuits (ICs), which shows promise for detection of hardware Trojans. The anomalous current activity caused by hardware Trojans manifests through a magnetic field side channel that can be imaged with the QDM, potentially allowing for detection and localization of the effects of tampering. This paper seeks to identify the capabilities of the QDM for hardware Trojan detection through the analysis of previous QDM work as well as QDM physical limits and potential Trojan behaviors. QDM metrics of interest are identified, such as spatial resolution, sensitivity, time-to-result, and field-of-view. Rare event detection on an FPGA is demonstrated with the QDM. The concept of operations is identified for QDM utilization at different steps of IC development, noting necessary considerations and limiting factors for use at different development stages. Finally, the effects of hardware Trojans on IC current activity are estimated and compared to QDM sensitivities to project QDM detection potential for ICs of varying process sizes.
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Submitted 12 February, 2024;
originally announced February 2024.
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Vector Magnetic Current Imaging of an 8 nm Process Node Chip and 3D Current Distributions Using the Quantum Diamond Microscope
Authors:
Sean M. Oliver,
Dmitro J. Martynowych,
Matthew J. Turner,
David A. Hopper,
Ronald L. Walsworth,
Edlyn V. Levine
Abstract:
The adoption of 3D packaging technology necessitates the development of new approaches to failure electronic device analysis. To that end, our team is developing a tool called the quantum diamond microscope (QDM) that leverages an ensemble of nitrogen vacancy (NV) centers in diamond, achieving vector magnetic imaging with a wide field-of-view and high spatial resolution under ambient conditions. H…
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The adoption of 3D packaging technology necessitates the development of new approaches to failure electronic device analysis. To that end, our team is developing a tool called the quantum diamond microscope (QDM) that leverages an ensemble of nitrogen vacancy (NV) centers in diamond, achieving vector magnetic imaging with a wide field-of-view and high spatial resolution under ambient conditions. Here, we present the QDM measurement of 2D current distributions in an 8-nm flip chip IC and 3D current distributions in a multi-layer PCB. Magnetic field emanations from the C4 bumps in the flip chip dominate the QDM measurements, but these prove to be useful for image registration and can be subtracted to resolve adjacent current traces in the die at the micron scale. Vias in 3D ICs display only Bx and By magnetic fields due to their vertical orientation and are difficult to detect with magnetometers that only measure the Bz component (orthogonal to the IC surface). Using the multi-layer PCB, we show that the QDM's ability to simultaneously measure Bx, By, and Bz is advantageous for resolving magnetic fields from vias as current passes between layers. We also show how spacing between conducting layers is determined by magnetic field images and how it agrees with the design specifications of the PCB. In our initial efforts to provide further z-depth information for current sources in complex 3D circuits, we show how magnetic field images of individual layers can be subtracted from the magnetic field image of the total structure. This allows for isolation of signal layers and can be used to map embedded current paths via solution of the 2D magnetic inverse. In addition, the paper also discusses the use of neural networks to identify 2D current distributions and its potential for analyzing 3D structures.
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Submitted 16 February, 2022;
originally announced February 2022.
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Growth kinetics and atomistic mechanisms of native oxidation of ZrS$_x$Se$_{2-x}$ and MoS$_2$ crystals
Authors:
Seong Soon Jo,
Akshay Singh,
Liqiu Yang,
Subodh C. Tiwari,
Sungwook Hong,
Aravind Krishnamoorthy,
Maria Gabriela Sales,
Sean M. Oliver,
Joshua Fox,
Randal L. Cavalero,
David W. Snyder,
Patrick M. Vora,
Stephen J. McDonnell,
Priya Vashishta,
Rajiv K. Kalia,
Aiichiro Nakano,
Rafael Jaramillo
Abstract:
A thorough understanding of native oxides is essential for designing semiconductor devices. Here we report a study of the rate and mechanisms of spontaneous oxidation of bulk single crystals of ZrS$_x$Se$_{2-x}$ alloys and MoS$_2$. ZrS$_x$Se$_{2-x}$ alloys oxidize rapidly, and the oxidation rate increases with Se content. Oxidation of basal surfaces is initiated by favorable O$_2$ adsorption and p…
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A thorough understanding of native oxides is essential for designing semiconductor devices. Here we report a study of the rate and mechanisms of spontaneous oxidation of bulk single crystals of ZrS$_x$Se$_{2-x}$ alloys and MoS$_2$. ZrS$_x$Se$_{2-x}$ alloys oxidize rapidly, and the oxidation rate increases with Se content. Oxidation of basal surfaces is initiated by favorable O$_2$ adsorption and proceeds by a mechanism of Zr-O bond switching, that collapses the van der Waals gaps, and is facilitated by progressive redox transitions of the chalcogen. The rate-limiting process is the formation and out-diffusion of SO$_2$. In contrast, MoS$_2$ basal surfaces are stable due to unfavorable oxygen adsorption. Our results provide insight and quantitative guidance for designing and processing semiconductor devices based on ZrS$_x$Se$_{2-x}$ and MoS$_2$, and identify the atomistic-scale mechanisms of bonding and phase transformations in layered materials with competing anions.
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Submitted 16 November, 2020; v1 submitted 30 June, 2020;
originally announced July 2020.
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Valley Phenomena in the Candidate Phase Change Material WSe$_{2(1-x)}$Te$_{2x}$
Authors:
Sean M. Oliver,
Joshua Young,
Sergiy Krylyuk,
Thomas L. Reinecke,
Albert V. Davydov,
Patrick M. Vora
Abstract:
Alloyed transition metal dichalcogenides provide an opportunity for coupling band engineering with valleytronic phenomena in an atomically-thin platform. However, valley properties in alloys remain largely unexplored. We investigate the valley degree of freedom in monolayer alloys of the phase change candidate material WSe$_{2(1-x)}$Te$_{2x}$. Low temperature Raman measurements track the alloy-ind…
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Alloyed transition metal dichalcogenides provide an opportunity for coupling band engineering with valleytronic phenomena in an atomically-thin platform. However, valley properties in alloys remain largely unexplored. We investigate the valley degree of freedom in monolayer alloys of the phase change candidate material WSe$_{2(1-x)}$Te$_{2x}$. Low temperature Raman measurements track the alloy-induced transition from the semiconducting 1H phase of WSe$_2$ to the semimetallic 1T$_d$ phase of WTe$_2$. We correlate these observations with density functional theory calculations and identify new Raman modes from W-Te vibrations in the 1H alloy phase. Photoluminescence measurements show ultra-low energy emission features that highlight alloy disorder arising from the large W-Te bond lengths. Interestingly, valley polarization and coherence in alloys survive at high Te compositions and are more robust against temperature than in WSe$_2$. These findings illustrate the persistence of valley properties in alloys with highly dissimilar parent compounds and suggest band engineering can be utilized for valleytronic devices.
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Submitted 22 November, 2019; v1 submitted 1 August, 2019;
originally announced August 2019.
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Evolution of Raman spectra in Mo$_{1-x}$W$_x$Te$_2$ alloys
Authors:
Sean M. Oliver,
Ryan Beams,
Sergiy Krylyuk,
Irina Kalish,
Arunima K. Singh,
Alina Bruma,
Francesca Tavazza,
Jaydeep Joshi,
Iris R. Stone,
Stephan J. Stranick,
Albert V. Davydov,
Patrick M. Vora
Abstract:
The structural polymorphism in transition metal dichalcogenides (TMDs) provides exciting opportunities for developing advanced electronics. For example, MoTe$_2$ crystallizes in the 2H semiconducting phase at ambient temperature and pressure, but transitions into the 1T$^\prime$ semimetallic phase at high temperatures. Alloying MoTe$_2$ with WTe$_2$ reduces the energy barrier between these two pha…
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The structural polymorphism in transition metal dichalcogenides (TMDs) provides exciting opportunities for developing advanced electronics. For example, MoTe$_2$ crystallizes in the 2H semiconducting phase at ambient temperature and pressure, but transitions into the 1T$^\prime$ semimetallic phase at high temperatures. Alloying MoTe$_2$ with WTe$_2$ reduces the energy barrier between these two phases, while also allowing access to the T$_d$ Weyl semimetal phase. The MoWTe$_2$ alloy system is therefore promising for developing phase change memory technology. However, achieving this goal necessitates a detailed understanding of the phase composition in the MoTe$_2$-WTe$_2$ system. We combine polarization-resolved Raman spectroscopy with X-ray diffraction (XRD) and scanning transmission electron microscopy (STEM) to study MoWTe$_2$ alloys over the full compositional range x from 0 to 1. We identify Raman and XRD signatures characteristic of the 2H, 1T$^\prime$, and T$_d$ structural phases that agree with density-functional theory (DFT) calculations, and use them to identify phase fields in the MoTe$_2$-WTe$_2$ system, including single-phase 2H, 1T$^\prime$, and T$_d$ regions, as well as a two-phase 1T$^\prime$ + T$_d$ region. Disorder arising from compositional fluctuations in MoWTe$_2$ alloys breaks inversion and translational symmetry, leading to the activation of an infrared 1T$^\prime$-MoTe$_2$ mode and the enhancement of a double-resonance Raman process in 2H-MoWTe$_2$ alloys. Compositional fluctuations limit the phonon correlation length, which we estimate by fitting the observed asymmetric Raman lineshapes with a phonon confinement model. These observations reveal the important role of disorder in MoWTe$_2$ alloys, clarify the structural phase boundaries, and provide a foundation for future explorations of phase transitions and electronic phenomena in this system.
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Submitted 31 March, 2017;
originally announced March 2017.
