Fully automated spectroscopic ellipsometry analyses of crystalline-phase semiconductors based on a new algorithm
Authors:
Sara Maeda,
Kohei Oiwake,
Yukinori Nishigaki,
Tetsuhiko Miyadera,
Masayuki Chikamatsu,
Takayuki Nagai,
Takuma Aizawa,
Kota Hanzawa,
Hidenori Hiramatsu,
Hideo Hosono,
Hiroyuki Fujiwara
Abstract:
One significant drawback of a spectroscopic ellipsometry (SE) technique is its time-consuming and often complicated analysis procedure necessary to assess the optical functions of thin-film and bulk samples. Here, to solve this inherent problem of a traditional SE method, we present a new general way that allows full automation of SE analyses for crystalline-phase semiconductors exhibiting complex…
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One significant drawback of a spectroscopic ellipsometry (SE) technique is its time-consuming and often complicated analysis procedure necessary to assess the optical functions of thin-film and bulk samples. Here, to solve this inherent problem of a traditional SE method, we present a new general way that allows full automation of SE analyses for crystalline-phase semiconductors exhibiting complex absorption features. In particular, we have modified a scheme established in our previous study, which performs a non-linear SE fitting analysis only in a low energy region at the beginning, while the analyzed energy region is gradually expanded toward higher energy by incorporating addition optical transition peaks. In this study, we have further developed a unique analyzing-energy search algorithm, in which a proper analyzing-energy region is determined to incorporate the feature of a new transition peak. In the developed method, a drastic improvement over the previous simple approach has been confirmed for expressing complex dielectric functions consisting of sharp and broad absorption peaks. The proposed method (Delta M method) has been applied successfully to analyze perovskite-based crystalline samples, including hybrid perovskite (CH3NH3PbI3) and chalcogenide perovskites (SrHfS3 and BaZrS3). In the automated analyses of these semiconductors, 7-8 transition peaks are introduced automatically to describe sample dielectric functions, while structural parameters, such as thin-film and roughness thicknesses, are also determined simultaneously. The established method can drastically reduce an analysis time to a level that allows the automatic inspection of daily varying material optical properties and expands the application area of spectroscopic ellipsometry considerably.
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Submitted 11 May, 2022;
originally announced May 2022.
Fully automated spectroscopic ellipsometry analyses: Application to MoOx thin films
Authors:
Kohei Oiwake,
Yukinori Nishigaki,
Shohei Fujimoto,
Sara Maeda,
Hiroyuki Fujiwara
Abstract:
In spectroscopic ellipsometry, the optical properties of materials are obtained indirectly by generally assuming dielectric function and optical models. This ellipsometry analysis, which typically requires numerous model parameters, has essentially been performed by a try-and-error approach, making this method as a rather time-consuming characterization technique. Here, we propose a fully automate…
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In spectroscopic ellipsometry, the optical properties of materials are obtained indirectly by generally assuming dielectric function and optical models. This ellipsometry analysis, which typically requires numerous model parameters, has essentially been performed by a try-and-error approach, making this method as a rather time-consuming characterization technique. Here, we propose a fully automated spectroscopic ellipsometry analysis method, which can be applied to obtain dielectric functions of light absorbing materials in a full measured energy range without any prior knowledge of model parameters. The developed method consists of a multiple-step grid search and the following non-linear regression analysis. Specifically, in our approach, the analyzed spectral region is gradually expanded toward higher energy while incorporating an additional optical transition peak whenever the root-mean-square error of the fitting analysis exceeds a critical value. In particular, we have established a unique algorithm that could be employed for the ellipsometry analyses of different types of optical materials. The proposed scheme has been applied successfully for the analyses of MoOx transparent oxides and the complex dielectric function of a MoOx layer that exhibits dual optical transitions due to band-edge and deep-level absorptions has been determined. The developed method can drastically reduce a time necessary for an ellipsometry analysis, eliminating a serious drawback of a traditional spectroscopic ellipsometry analysis method.
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Submitted 26 July, 2021; v1 submitted 30 March, 2021;
originally announced March 2021.
