Showing 1–12 of 12 results for author: Oberg, L

Identification of defects and the origins of surface noise on hydrogen-terminated (100) diamond

Authors: Yi-Ying Sung, Lachlan Oberg, Rebecca Griffin, Alex K. Schenk, Henry Chandler, Santiago Corujeira Gallo, Alastair Stacey, Tetiana Sergeieva, Marcus W. Doherty, Cedric Weber, Christopher I. Pakes

Abstract: Near-surface nitrogen-vacancy centres are critical to many diamond-based quantum technologies such as information processors and nanosensors. Surface defects play an important role in the design and performance of these devices. The targeted creation of defects is central to proposed bottom-up approaches to nanofabrication of quantum diamond processors, and uncontrolled surface defects may generat… ▽ More Near-surface nitrogen-vacancy centres are critical to many diamond-based quantum technologies such as information processors and nanosensors. Surface defects play an important role in the design and performance of these devices. The targeted creation of defects is central to proposed bottom-up approaches to nanofabrication of quantum diamond processors, and uncontrolled surface defects may generate noise and charge trapping which degrade shallow NV device performance. Surface preparation protocols may be able to control the production of desired defects and eliminate unwanted defects, but only if their atomic structure can first be conclusively identified. This work uses a combination of scanning tunnelling microscopy (STM) imaging and first-principles simulations to identify several surface defects on H:C(100)-2x1 surfaces prepared using chemical vapour deposition (CVD). The atomic structure of these defects is elucidated, from which the microscopic origins of magnetic noise and charge trapping is determined based on modelling of their paramagnetic properties and acceptor states. Rudimentary control of these deleterious properties is demonstrated through STM tip-induced manipulation of the defect structure. Furthermore, the results validate accepted models for CVD diamond growth by identifying key adsorbates responsible for nucleation of new layers. △ Less

Submitted 29 May, 2024; originally announced May 2024.

Comments: 15 pages, 14 figures, combined manuscript and supporting information

NV with nitrogen

Authors: N. B. Manson, M. S. J. Barson, M. Hedges, P. Singh, S. Stearn, Y. Chen, L. Oberg, C. A. Meriles, M. W. Doherty

Abstract: The paper highlights the difference the properties the nitrogen vacancy centre in bulk diamond containing nitrogen compared to the properties of single centres. Charge transfer between the negative and neutral charge state can occur with a tunnelling of an electron from an adjacent nitrogen atom without involving conduction or valence electrons. This contrasts with charge transfer of single sites.… ▽ More The paper highlights the difference the properties the nitrogen vacancy centre in bulk diamond containing nitrogen compared to the properties of single centres. Charge transfer between the negative and neutral charge state can occur with a tunnelling of an electron from an adjacent nitrogen atom without involving conduction or valence electrons. This contrasts with charge transfer of single sites. There are other differences for example with the intersystem crossing. △ Less

Submitted 16 November, 2023; originally announced November 2023.

Comments: 28 pages with 18 figures

Semiempirical $\textit{ab initio}$ modeling of bound states of deep defects in semiconductor quantum technologies

Authors: YunHeng Chen, Lachlan Oberg, Johannes Flick, Artur Lozovoi, Carlos A. Meriles, Marcus W. Doherty

Abstract: A significant hurdle in developing high-performance semiconductor quantum technologies utilizing deep defects is related to charge dynamics. Unfortunately, progress in modeling their charge dynamics has been hindered over recent decades due to the absence of appropriate multiscale models capable of accurately representing the atomic properties of these defects and their impact on device performanc… ▽ More A significant hurdle in developing high-performance semiconductor quantum technologies utilizing deep defects is related to charge dynamics. Unfortunately, progress in modeling their charge dynamics has been hindered over recent decades due to the absence of appropriate multiscale models capable of accurately representing the atomic properties of these defects and their impact on device performance. Here, we present a semi-\textit{ab initio} method for modeling the bound states of deep defects in semiconductor quantum technologies, applied to the negatively charged nitrogen vacancy (NV$^-$) center in diamond. We employ density functional theory calculations to construct accurate potentials for an effective mass model, which allow us to unveil the structure of the bound hole states. We develop a model to calculate the nonradiative capture cross sections, which agrees with experiment within one order of magnitude. Finally, we present our attempt at constructing the photoionization spectrum of NV$^0\rightarrow$ NV$^-$ + bound hole, showing that the electronic transitions of the bound holes can be distinguished from phonon sidebands. This paper offers a practical and efficient solution to a long-standing challenge in understanding the charge dynamics of deep defects. △ Less

Submitted 13 May, 2024; v1 submitted 20 June, 2023; originally announced June 2023.

Comments: Published version in PRB

Journal ref: Phys. Rev. B 109, L201115 (2024)

The Gap between Higher Education and the Software Industry -- A Case Study on Technology Differences

Authors: Felix Dobslaw, Kristian Angelin, Lena-Maria Öberg, Awais Ahmad

Abstract: We see an explosive global labour demand in the Software Industry, and higher education institutions play a crucial role in supplying the industry with professionals with relevant education. Existing literature identifies a gap between what software engineering education teaches students and what the software industry demands. Using our open-sourced Job Market AnalyseR (JMAR) text-analysis tool, w… ▽ More We see an explosive global labour demand in the Software Industry, and higher education institutions play a crucial role in supplying the industry with professionals with relevant education. Existing literature identifies a gap between what software engineering education teaches students and what the software industry demands. Using our open-sourced Job Market AnalyseR (JMAR) text-analysis tool, we compared keywords from higher education course syllabi and job posts to investigate the knowledge gap from a technology-focused departure point. We present a trend analysis of technology in job posts over the past six years in Sweden. We found that demand for cloud and automation technology such as Kubernetes and Docker is rising in job ads but not that much in higher education syllabi. The language used in higher education syllabi and job ads differs where the former emphasizes concepts and the latter technologies more heavily. We discuss possible remedies to bridge this mismatch to draw further conclusions in future work, including calibrating JMAR to other industry-relevant aspects, including soft skills, software concepts, or new demographics. △ Less

Submitted 27 March, 2023; originally announced March 2023.

Comments: 16 pages

Spin-to-Charge conversion with electrode confinement in diamond

Authors: Liam Hanlon, Lachlan Oberg, Yun Heng Chen, Marcus W. Doherty

Abstract: The nitrogen-vacancy (NV) center in diamond has a wide range of potential applications in quantum metrology, communications and computation. The key to its use lies in how large the optical spin contrast is and the associated fidelity of spin state readout. In this paper we propose a new mechanism for improving contrast with a spin-to-charge protocol that relies on the use of an external electrode… ▽ More The nitrogen-vacancy (NV) center in diamond has a wide range of potential applications in quantum metrology, communications and computation. The key to its use lies in how large the optical spin contrast is and the associated fidelity of spin state readout. In this paper we propose a new mechanism for improving contrast with a spin-to-charge protocol that relies on the use of an external electrode and cryogenic temperatures to discretize the diamond conduction band for spin-selective resonant photoionization. We use effective mass theory to calculate the discrete eigenenergies in this new system and use them to formulate a new spin-to-charge protocol that involves resonant photoionization out the NV ground state into the diamond conduction band. The major sources of broadening are also addressed which guide the design of the experiment. With this mechanism we theorise an optical spin contrast that and an associated spin readout fidelity of 85%. This significant improvement can be applied to a number of cryogenic quantum technologies. △ Less

Submitted 20 August, 2021; originally announced August 2021.

Comments: 16 pages, 7 figures

Nanoscale vector electric field imaging using a single electron spin

Authors: M. S. J Barson, L. M. Oberg, L. P. McGuinness, A. Denisenko, N. B. Manson, J. Wrachtrup, M. W. Doherty

Abstract: The ability to perform nanoscale electric field imaging of elementary charges at ambient temperatures will have diverse interdisciplinary applications. While the nitrogen-vacancy (NV) center in diamond is capable of high-sensitivity electrometry, demonstrations have so far been limited to macroscopic field features or detection of single charges internal to diamond itself. In this work we greatly… ▽ More The ability to perform nanoscale electric field imaging of elementary charges at ambient temperatures will have diverse interdisciplinary applications. While the nitrogen-vacancy (NV) center in diamond is capable of high-sensitivity electrometry, demonstrations have so far been limited to macroscopic field features or detection of single charges internal to diamond itself. In this work we greatly extend these capabilities by using a shallow NV center to image the electric field of a charged atomic force microscope tip with nanoscale resolution. This is achieved by measuring Stark shifts in the NV spin-resonance due to AC electric fields. To achieve this feat we employ for the first time, the integration of Qdyne with scanning quantum microscopy. We demonstrate near single charge sensitivity of $η_e = 5.3$ charges/$\sqrt{\text{Hz}}$, and sub-charge detection ($0.68e$). This proof-of-concept experiment provides the motivation for further sensing and imaging of electric fields using NV centers in diamond. △ Less

Submitted 24 November, 2020; originally announced November 2020.

Nitrogen overgrowth as a catalytic mechanism during diamond chemical vapour deposition

Authors: Lachlan M. Oberg, Marietta Batzer, Alastair Stacey, Marcus W. Doherty

Abstract: Nitrogen is frequently included in chemical vapour deposition feed gases to accelerate diamond growth. While there is no consensus for an atomistic mechanism of this effect, existing studies have largely focused on the role of sub-surface nitrogen and nitrogen-based adsorbates. In this work, we demonstrate the catalytic effect of surface-embedded nitrogen in nucleating new layers of (100) diamond.… ▽ More Nitrogen is frequently included in chemical vapour deposition feed gases to accelerate diamond growth. While there is no consensus for an atomistic mechanism of this effect, existing studies have largely focused on the role of sub-surface nitrogen and nitrogen-based adsorbates. In this work, we demonstrate the catalytic effect of surface-embedded nitrogen in nucleating new layers of (100) diamond. To do so we develop a model of nitrogen overgrowth using density functional theory. Nucleation of new layers occurs through C insertion into a C--C surface dimer. However, we find that C insertion into a C--N dimer has substantially reduced energy requirements. In particular, the rate of the key dimer ring-opening and closing mechanism is increased 400-fold in the presence of nitrogen. Full incorporation of the substitutional nitrogen defect is then facilitated through charge transfer of an electron from the nitrogen lone pair to charge acceptors on the surface. This work provides a compelling mechanism for the role of surface-embedded nitrogen in enhancing (100) diamond growth through the nucleation of new layers. Furthermore, it demonstrates a pathway for substitutional nitrogen formation during chemical vapour deposition which can be extended to study the creation of technologically relevant nitrogen-based defects. △ Less

Submitted 10 November, 2020; originally announced November 2020.

Comments: main text: 19 pages, 9 figures supplementary: 10 pages, 10 figures

A solution to electric-field screening in diamond quantum electrometers

Authors: Lachlan M. Oberg, Mitchell O. de Vries, Liam Hanlon, Kenji Strazdins, Michael S. J. Barson, Jörg Wrachtrup, Marcus W. Doherty

Abstract: There are diverse interdisciplinary applications for nanoscale resolution electrometry of elementary charges under ambient conditions. These include characterization of 2D electronics, charge transfer in biological systems, and measurement of fundamental physical phenomena. The nitrogen-vacancy center in diamond is uniquely capable of such measurements, however electrometry thus far has been limit… ▽ More There are diverse interdisciplinary applications for nanoscale resolution electrometry of elementary charges under ambient conditions. These include characterization of 2D electronics, charge transfer in biological systems, and measurement of fundamental physical phenomena. The nitrogen-vacancy center in diamond is uniquely capable of such measurements, however electrometry thus far has been limited to charges within the same diamond lattice. It has been hypothesized that the failure to detect charges external to diamond is due to quenching and surface screening, but no proof, model, or design to overcome this has yet been proposed. In this work we affirm this hypothesis through a comprehensive theoretical model of screening and quenching within a diamond electrometer and propose a solution using controlled nitrogen doping and a fluorine-terminated surface. We conclude that successful implementation requires further work to engineer diamond surfaces with lower surface defect concentrations. △ Less

Submitted 19 December, 2019; originally announced December 2019.

Journal ref: Phys. Rev. Applied 14, 014085 (2020)

Optimised fast gates for quantum computing with trapped ions

Authors: Evan P. G. Gale, Zain Mehdi, Lachlan M. Oberg, Alexander K. Ratcliffe, Simon A. Haine, Joseph J. Hope

Abstract: We present an efficient approach to optimising pulse sequences for implementing fast entangling two-qubit gates on trapped ion quantum information processors. We employ a two-phase procedure for optimising gate fidelity, which we demonstrate for multi-ion systems in linear Paul trap and microtrap architectures. The first phase involves a global optimisation over a computationally inexpensive cost… ▽ More We present an efficient approach to optimising pulse sequences for implementing fast entangling two-qubit gates on trapped ion quantum information processors. We employ a two-phase procedure for optimising gate fidelity, which we demonstrate for multi-ion systems in linear Paul trap and microtrap architectures. The first phase involves a global optimisation over a computationally inexpensive cost function constructed under strong approximations of the gate dynamics. The second phase involves local optimisations that utilise a more precise ODE description of the gate dynamics, which captures the non-linearity of the Coulomb interaction and the effects of finite laser repetition rate. We propose two novel gate schemes that are compatible with this approach, and we demonstrate that they outperform existing schemes in terms of achievable gate speed and fidelity for feasible laser repetition rates. In optimising sub-microsecond gates in microtrap architectures, the proposed schemes achieve orders of magnitude higher fidelities than previous proposals. Finally, we investigate the impact of pulse imperfections on gate fidelity and evaluate error bounds for a range of gate speeds. △ Less

Submitted 5 March, 2020; v1 submitted 16 December, 2019; originally announced December 2019.

Comments: 13 pages, 7 figures, 1 table

Journal ref: Phys. Rev. A 101, 052328 (2020)

Spin coherent quantum transport of electrons between defects in diamond

Authors: Lachlan M Oberg, Eric Huang, Prithvi M Reddy, Audrius Alkauskas, Andrew D Greentree, Jared H Cole, Neil B Manson, Carlos A Meriles, Marcus W Doherty

Abstract: The nitrogen-vacancy color center in diamond has rapidly emerged as an important solid-state system for quantum information processing. While individual spin registers have been used to implement small-scale diamond quantum computing, the realization of a large-scale device requires development of an on-chip quantum bus for transporting information between distant qubits. Here we propose a method… ▽ More The nitrogen-vacancy color center in diamond has rapidly emerged as an important solid-state system for quantum information processing. While individual spin registers have been used to implement small-scale diamond quantum computing, the realization of a large-scale device requires development of an on-chip quantum bus for transporting information between distant qubits. Here we propose a method for coherent quantum transport of an electron and its spin state between distant NV centers. Transport is achieved by the implementation of spatial stimulated adiabatic Raman passage through the optical control of the NV center charge states and the confined conduction states of a diamond nanostructure. Our models show that for two NV centers in a diamond nanowire, high fidelity transport can be achieved over distances of order hundreds of nanometres in timescales of order hundreds of nanoseconds. Spatial adiabatic passage is therefore a promising option for realizing an on-chip spin quantum bus. △ Less

Submitted 16 May, 2019; originally announced May 2019.

Micromotion-Enhanced Fast Entangling Gates For Trapped Ion Quantum Computing

Authors: Alexander K. Ratcliffe, Lachlan M. Oberg, Joseph J. Hope

Abstract: RF-induced micromotion in trapped ion systems is typically minimised or circumvented to avoid off-resonant couplings for adiabatic processes such as multi-ion gate operations. Non-adiabatic entangling gates (so-called `fast gates') do not require resolution of specific motional sidebands, and are therefore not limited to timescales longer than the trapping period. We find that fast gates designed… ▽ More RF-induced micromotion in trapped ion systems is typically minimised or circumvented to avoid off-resonant couplings for adiabatic processes such as multi-ion gate operations. Non-adiabatic entangling gates (so-called `fast gates') do not require resolution of specific motional sidebands, and are therefore not limited to timescales longer than the trapping period. We find that fast gates designed for micromotion-free environments have significantly reduced fidelity in the presence of micromotion. We show that when fast gates are designed to account for the RF-induced micromotion, they can, in fact, out-perform fast gates in the absence of micromotion. The state-dependent force due to the laser induces energy shifts that are amplified by the state-independent forces producing the micromotion. This enhancement is present for all trapping parameters and is robust to realistic sources of experimental error. This result paves the way for fast two-qubit entangling gates on scalable 2D architectures, where micromotion is necessarily present on at least one inter-ion axis. △ Less

Submitted 23 February, 2020; v1 submitted 17 February, 2019; originally announced February 2019.

Journal ref: Phys. Rev. A 101, 052332 (2020)

Volatiles in protoplanetary disks

Authors: Klaus M. Pontoppidan, Colette Salyk, Edwin A. Bergin, Sean Brittain, Bernard Marty, Olvier Mousis, Karin L. Oberg

Abstract: Volatiles are compounds with low sublimation temperatures, and they make up most of the condensible mass in typical planet-forming environments. They consist of relatively small, often hydrogenated, molecules based on the abundant elements carbon, nitrogen and oxygen. Volatiles are central to the process of planet formation, forming the backbone of a rich chemistry that sets the initial conditions… ▽ More Volatiles are compounds with low sublimation temperatures, and they make up most of the condensible mass in typical planet-forming environments. They consist of relatively small, often hydrogenated, molecules based on the abundant elements carbon, nitrogen and oxygen. Volatiles are central to the process of planet formation, forming the backbone of a rich chemistry that sets the initial conditions for the formation of planetary atmospheres, and act as a solid mass reservoir catalyzing the formation of planets and planetesimals. This growth has been driven by rapid advances in observations and models of protoplanetary disks, and by a deepening understanding of the cosmochemistry of the solar system. Indeed, it is only in the past few years that representative samples of molecules have been discovered in great abundance throughout protoplanetary disks - enough to begin building a complete budget for the most abundant elements after hydrogen and helium. The spatial distributions of key volatiles are being mapped, snow lines are directly seen and quantified, and distinct chemical regions within protoplanetary disks are being identified, characterized and modeled. Theoretical processes invoked to explain the solar system record are now being observationally constrained in protoplanetary disks, including transport of icy bodies and concentration of bulk condensibles. The balance between chemical reset - processing of inner disk material strong enough to destroy its memory of past chemistry, and inheritance - the chemically gentle accretion of pristine material from the interstellar medium in the outer disk, ultimately determines the final composition of pre-planetary matter. This chapter focuses on making the first steps toward understanding whether the planet formation processes that led to our solar system are universal. △ Less

Submitted 10 January, 2014; originally announced January 2014.

Comments: Accepted for publication as a chapter in Protostars and Planets VI, University of Arizona Press (2014), eds. H. Beuther, R. Klessen, C. Dullemond, Th. Henning