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Laser-synthesized TiN nanoparticles as novel efficient sorbent for environmental water cleaning
Authors:
A. V. Syuy,
I. V. Martynov,
I. A. Zavidovskiy,
D. V. Dyubo,
Q. Sun,
X. Yang,
G. V. Tikhonowski,
D. I. Tselikov,
M. S. Savinov,
I. V. Sozaev,
A. A. Popov,
S. M. Klimentov,
G. I. Tselikov,
V. S. Volkov,
S. M. Novikov,
A. V. Arsenin,
X. Zhao,
A. V. Kabashin
Abstract:
Dyes used in industries such as textile, paper, and leather are known to be harmful to both human health and aquatic ecosystems. Therefore, finding effective and sustainable methods to remove dyes from wastewater is crucial for mitigating the detrimental effects of pollution.TiN nanoparticles have good absorption and conversion of light energy into thermal energy in the visible range of the spectr…
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Dyes used in industries such as textile, paper, and leather are known to be harmful to both human health and aquatic ecosystems. Therefore, finding effective and sustainable methods to remove dyes from wastewater is crucial for mitigating the detrimental effects of pollution.TiN nanoparticles have good absorption and conversion of light energy into thermal energy in the visible range of the spectrum, which makes them promising in various applications, from biomedical to environmental protection. In this work, it is shown that titanium nitride nanoparticles also possess promising adsorption capabilitieseffect. TiN nanoparticles were synthesized by laser ablation method in liquid. Water, acetone and acetonitrile are used as solvent. Nanoparticles were characterized by scanning and transmission microscopy, Raman spectroscopy, which showed the formation of the under-stoichiometric titanium nitride (TiN1-x). TiN nanoparticles are investigated as a promising object for high adsorption It is shown that adsorption of TiN nanoparticles is associated with the electrostatic effect and the presence of pores in the synthesized nanoparticles. Optimal dye absorption capabilities were found to be associated with a low amount of Ti vacancies and high amount of N vacancies acting as donor states. The particles synthesized in water have the highest sorption capacity of dye achieving the value of 136.5 mg/g.
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Submitted 22 April, 2024;
originally announced April 2024.
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Sojourns of locally self-similar Gaussian processes
Authors:
Svyatoslav M. Novikov
Abstract:
Given a Gaussian risk process $R(t)=u+c(t)-X(t),t\ge 0$, the cumulative Parisian ruin probability on a finite time interval $[0,T]$ with respect to $L \geq 0$ is defined as the probability that the sojourn time that the risk process $R$ spends under the level 0 on this time interval $[0,T]$ exceeds $L$. In this contribution we derive exact asymptotic approximations of the cumulative Parisian ruin…
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Given a Gaussian risk process $R(t)=u+c(t)-X(t),t\ge 0$, the cumulative Parisian ruin probability on a finite time interval $[0,T]$ with respect to $L \geq 0$ is defined as the probability that the sojourn time that the risk process $R$ spends under the level 0 on this time interval $[0,T]$ exceeds $L$. In this contribution we derive exact asymptotic approximations of the cumulative Parisian ruin probability for a general class of Gaussian processes introduced in [9] assuming that $X$ is locally self-similar. We illustrate our findings with several examples. As a byproduct we show that Berman's constants can be defined alternatively by a self-similar Gaussian process which could be quite different to the fractional Brownian motion.
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Submitted 5 February, 2024;
originally announced February 2024.
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Exploring van der Waals materials with high anisotropy: geometrical and optical approaches
Authors:
Aleksandr S. Slavich,
Georgy A. Ermolaev,
Mikhail K. Tatmyshevskiy,
Adilet N. Toksumakov,
Olga G. Matveeva,
Dmitriy V. Grudinin,
Arslan Mazitov,
Konstantin V. Kravtsov,
Alexander V. Syuy,
Dmitry M. Tsymbarenko,
Mikhail S. Mironov,
Sergey M. Novikov,
Ivan Kruglov,
Davit A. Ghazaryan,
Andrey A. Vyshnevyy,
Aleksey V. Arsenin,
Valentyn S. Volkov,
Kostya S. Novoselov
Abstract:
The emergence of van der Waals (vdW) materials resulted in the discovery of their giant optical, mechanical, and electronic anisotropic properties, immediately enabling countless novel phenomena and applications. Such success inspired an intensive search for the highest possible anisotropic properties among vdW materials. Furthermore, the identification of the most promising among the huge family…
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The emergence of van der Waals (vdW) materials resulted in the discovery of their giant optical, mechanical, and electronic anisotropic properties, immediately enabling countless novel phenomena and applications. Such success inspired an intensive search for the highest possible anisotropic properties among vdW materials. Furthermore, the identification of the most promising among the huge family of vdW materials is a challenging quest requiring innovative approaches. Here, we suggest an easy-to-use method for such a survey based on the crystallographic geometrical perspective of vdW materials followed by their optical characterization. Using our approach, we found As2S3 as a highly anisotropic vdW material. It demonstrates rare giant in-plane optical anisotropy, high refractive index and transparency in the visible range, overcoming the century-long record set by rutile. Given these benefits, As2S3 opens a pathway towards next-generation nanophotonics as demonstrated by an ultrathin true zero-order quarter-waveplate that combines classical and the Fabry-Perot optical phase accumulations. Hence, our approach provides an effective and easy-to-use method to find vdW materials with the utmost anisotropic properties.
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Submitted 5 September, 2023;
originally announced September 2023.
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High-refractive index and mechanically cleavable non-van der Waals InGaS3
Authors:
Adilet N. Toksumakov,
Georgy A. Ermolaev,
Alexander S. Slavich,
Natalia V. Doroshina,
Ekaterina V. Sukhanova,
Dmitry I. Yakubovsky,
Sergey M. Novikov,
Alexander S. Oreshonkov,
Dmitry M. Tsymbarenko,
Zakhar I. Popov,
Dmitry G. Kvashnin,
Andrey A. Vyshnevyy,
Aleksey V. Arsenin,
Davit A. Ghazaryan,
Valentyn S. Volkov
Abstract:
The growing families of two-dimensional crystals derived from naturally occurring van der Waals materials offer an unprecedented platform to investigate elusive physical phenomena and could be of use in a diverse range of devices. Of particular interest are recently reported atomic sheets of non-van der Waals materials, which could allow a better comprehension of the nature of structural bonds and…
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The growing families of two-dimensional crystals derived from naturally occurring van der Waals materials offer an unprecedented platform to investigate elusive physical phenomena and could be of use in a diverse range of devices. Of particular interest are recently reported atomic sheets of non-van der Waals materials, which could allow a better comprehension of the nature of structural bonds and increase the functionality of prospective heterostructures. Here, we study the optostructural properties of ultrathin non-van der Waals InGaS3 sheets produced by standard mechanical cleavage. Our ab initio calculation results suggest an emergence of authentically delicate out-of-plane covalent bonds within its unit cell, and, as a consequence, an artificial generation of layered structure within the material. Those yield to singular layer isolation energies of around 50 meVA-2, which is comparable with the conventional van der Waals material's monolayer isolation energies of 20 - 60 meVA-2. In addition, we provide a comprehensive analysis of the structural, vibrational, and optical properties of the materials presenting that it is a wide bandgap (2.73 eV) semiconductor with a high-refractive index (higher than 2.5) and negligible losses in the visible and infrared spectral ranges. It makes it a perfect candidate for further establishment of visible-range all-dielectric nanophotonics.
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Submitted 5 May, 2022;
originally announced May 2022.
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Transition metal dichalcogenide nanospheres for high-refractive-index nanophotonics and biomedical theranostics
Authors:
G. I. Tselikov,
G. A. Ermolaev,
A. A. Popov,
G. V. Tikhonowski,
A. S. Taradin,
A. A. Vyshnevyy,
A. V. Syuy,
S. M. Klimentov,
S. M. Novikov,
A. B. Evlyukhin,
A. V. Kabashin,
A. V. Arsenin,
K. S. Novoselov,
V. S. Volkov
Abstract:
Recent developments in the area of resonant dielectric nanostructures has created attractive opportunities for the concentrating and manipulating light at the nanoscale and the establishment of new exciting field of all-dielectric nanophotonics. Transition metal dichalcogenides (TMDCs) with nanopatterned surfaces are especially promising for these tasks. Still, the fabrication of these structures…
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Recent developments in the area of resonant dielectric nanostructures has created attractive opportunities for the concentrating and manipulating light at the nanoscale and the establishment of new exciting field of all-dielectric nanophotonics. Transition metal dichalcogenides (TMDCs) with nanopatterned surfaces are especially promising for these tasks. Still, the fabrication of these structures requires sophisticated lithographic processes, drastically complicating application prospects. To bridge this gap and broaden the application scope of TMDC nanomaterials, we report here femtosecond laser-ablative fabrication of water-dispersed spherical TMDC (MoS2 and WS2) nanoparticles (NPs) of variable size (5 - 250 nm). Such nanoparticles demonstrate exciting optical and electronic properties inherited from TMDC crystals, due to preserved crystalline structure, which offers a unique combination of pronounced excitonic response and high refractive index value, making possible a strong concentration of electromagnetic field in the nanoparticles. Furthermore, such nanoparticles offer additional tunability due to hybridization between the Mie and excitonic resonances. Such properties bring to life a number of nontrivial effects, including enhanced photoabsorption and photothermal conversion. As an illustration, we demonstrate that the nanoparticles exhibit a very strong photothermal response, much exceeding that of conventional dielectric nanoresonators based on Si. Being in a mobile colloidal state and exhibiting superior optical properties compared to other dielectric resonant structures, the synthesized TMDC nanoparticles offer opportunities for the development of next-generation nanophotonic and nanotheranostic platforms, including photothermal therapy and multimodal bioimaging.
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Submitted 27 November, 2021;
originally announced November 2021.
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Nonlinear exciton-Mie coupling in transition metal dichalcogenides nanoresonators
Authors:
Ilya M. Antropov,
Anna A. Popkova,
Gleb I. Tselikov,
Georgy A. Ermolaev,
Igor Ozerov,
Federic Bedu,
Roman V. Kirtaev,
Sergey M. Novikov,
Andrey B. Evlyukhin,
Aleksey V. Arsenin,
Vladimir O. Bessonov,
Valentyn S. Volkov,
Andrey A. Fedyanin
Abstract:
Molybdenum disulfide (MoS2) is a layered material of transition metal dichalcogenides (TMDCs) with a high refractive index in the visible and infrared spectral range. Therefore, by constructing MoS2 into dielectric nanoresonators, one can generate highly confined electromagnetic Mie-type modes. In this work, we applied lithography and etching techniques to single crystal MoS2 flakes to fabricate n…
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Molybdenum disulfide (MoS2) is a layered material of transition metal dichalcogenides (TMDCs) with a high refractive index in the visible and infrared spectral range. Therefore, by constructing MoS2 into dielectric nanoresonators, one can generate highly confined electromagnetic Mie-type modes. In this work, we applied lithography and etching techniques to single crystal MoS2 flakes to fabricate nanodisks that support magnetic dipole Mie resonances in near infrared spectral range. The nanodisks were studied by second-harmonic generation (SHG) rotational anisotropy revealing the retention of crystallinity and the orientation of the crystallographic axes of the single disk structure after fabrication. Magnetic dipole resonances manifest as resonant intensity enhancement in SHG spectra. Tuning Mie resonances by selecting the geometrical size of MoS2 nanodisks, we demonstrated strongly enhanced SHG due to the overlap of the optical resonance at the fundamental wavelength with the C-exciton resonance at the second-harmonic wavelength.
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Submitted 3 December, 2021; v1 submitted 11 May, 2021;
originally announced May 2021.
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Peculiarities and evolution of Raman spectra of multilayer Ge/Si(001) heterostructures containing arrays of low-temperature MBE-grown Ge quantum dots of different size and number density: Experimental studies and numerical simulations
Authors:
Mikhail S. Storozhevykh,
Larisa V. Arapkina,
Sergey M. Novikov,
Valentyn S. Volkov,
Aleksey V. Arsenin,
Oleg V. Uvarov,
Vladimir A. Yuryev
Abstract:
Ge/Si(001) multilayer heterostructures containing arrays of low-temperature self-assembled Ge quantum dots and very thin Si$_x$Ge$_{1-x}$ layers of varying composition and complex geometry have been studied using Raman spectroscopy and scanning tunneling microscopy. The dependence of Raman spectra on the effective thickness of deposited Ge layers has been investigated in detail in the range from 4…
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Ge/Si(001) multilayer heterostructures containing arrays of low-temperature self-assembled Ge quantum dots and very thin Si$_x$Ge$_{1-x}$ layers of varying composition and complex geometry have been studied using Raman spectroscopy and scanning tunneling microscopy. The dependence of Raman spectra on the effective thickness of deposited Ge layers has been investigated in detail in the range from 4 to 18 Å. The position and shape of both Ge and SiGe vibrational modes are of great interest since they are closely related to the strain and composition of the material that plays a role of active component in perspective optoelectronic devices based on such structures. In this work, we present an explanation for some peculiar features of Raman spectra, which makes it possible to control the quality of the grown heterostructures more effectively. A dramatic increase of intensity of both the Ge$-$Ge and Si$-$Ge bands for the structure containing Ge layers of 10 Å and anomalous shift and broadening of the Si$-$Ge band for structures comprising Ge layers of 8 and 9 Å thick were observed. In our model, the anomalous behavior of the Raman spectra with the change of thickness of deposited Ge is connected with the flatness of Ge layers as well as transitional SiGe domains formed via the stress-induced diffusion from {105} facets of quantum dots. The conclusions are supported by the STM studies and the numerical calculations.
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Submitted 27 November, 2021; v1 submitted 3 April, 2021;
originally announced April 2021.
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Giant optical anisotropy in transition metal dichalcogenides for next-generation photonics
Authors:
G. A. Ermolaev,
D. V. Grudinin,
Y. V. Stebunov,
K. V. Voronin,
V. G. Kravets,
J. Duan,
A. B. Mazitov,
G. I. Tselikov,
A. Bylinkin,
D. I. Yakubovsky,
S. M. Novikov,
D. G. Baranov,
A. Y. Nikitin,
I. A. Kruglov,
T. Shegai,
P. Alonso-González,
A. N. Grigorenko,
A. V. Arsenin,
K. S. Novoselov,
V. S. Volkov
Abstract:
Large optical anisotropy observed in a broad spectral range is of paramount importance for efficient light manipulation in countless devices. Although a giant anisotropy was recently observed in the mid-infrared wavelength range, for visible and near-infrared spectral intervals, the problem remains acute with the highest reported birefringence values of 0.8 in BaTiS3 and h-BN crystals. This inspir…
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Large optical anisotropy observed in a broad spectral range is of paramount importance for efficient light manipulation in countless devices. Although a giant anisotropy was recently observed in the mid-infrared wavelength range, for visible and near-infrared spectral intervals, the problem remains acute with the highest reported birefringence values of 0.8 in BaTiS3 and h-BN crystals. This inspired an intensive search for giant optical anisotropy among natural and artificial materials. Here, we demonstrate that layered transition metal dichalcogenides (TMDCs) provide an answer to this quest owing to their fundamental differences between intralayer strong covalent bonding and weak interlayer van der Walls interaction. To do this, we carried out a correlative far- and near-field characterization validated by first-principle calculations that reveals an unprecedented birefringence of 1.5 in the infrared and 3 in the visible light for MoS2. Our findings demonstrate that this outstanding anisotropy allows for tackling the diffraction limit enabling an avenue for on-chip next-generation photonics.
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Submitted 11 January, 2021; v1 submitted 1 June, 2020;
originally announced June 2020.
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Engineering nanoparticles with pure high-order multipole scattering
Authors:
Vladimir A. Zenin,
Cesar E. Garcia-Ortiz,
Andrey B. Evlyukhin,
Yuanqing Yang,
Radu Malureanu,
Sergey M. Novikov,
Victor Coello,
Boris N. Chichkov,
Sergey I. Bozhevolnyi,
Andrei V. Lavrinenko,
N. Asger Mortensen
Abstract:
The ability to control scattering directionality of nanoparticles is in high demand for many nanophotonic applications. One of the challenges is to design nanoparticles producing pure high-order multipole scattering (e.g., octopole, hexadecapole), whose contribution is usually negligible compared to strong low-order multipole scattering (i.e., dipole or quadrupole). Here we present an intuitive wa…
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The ability to control scattering directionality of nanoparticles is in high demand for many nanophotonic applications. One of the challenges is to design nanoparticles producing pure high-order multipole scattering (e.g., octopole, hexadecapole), whose contribution is usually negligible compared to strong low-order multipole scattering (i.e., dipole or quadrupole). Here we present an intuitive way to design such nanoparticles by introducing a void inside them. We show that both shell and ring nanostructures allow regimes with nearly pure high-order multipole scattering. Experimentally measured scattering diagrams from properly designed silicon rings at near-infrared wavelengths (~ 800 nm) reproduce well scattering patterns of an electric octopole and magnetic hexadecapole. Our findings advance significantly inverse engineering of nanoparticles from given complex scattering characteristics, with possible applications in biosensing, optical metasurfaces, and quantum communications.
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Submitted 16 January, 2020; v1 submitted 10 January, 2020;
originally announced January 2020.
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The formation of intermediate layers in covered Ge/Si heterostructures with low-temperature quantum dots: a study using high-resolution transmission electron microscopy and Raman spectroscopy
Authors:
Mikhail S. Storozhevykh,
Larisa V. Arapkina,
Sergey M. Novikov,
Valentyn S. Volkov,
Oleg V. Uvarov,
Vladimir A. Yuryev
Abstract:
The method of software analysis of high-resolution TEM images using the peak pairs algorithm in combination with Raman spectroscopy was employed to study lattice deformations in Ge/Si(001) structures with low-temperature Ge quantum dots. It was found that the stresses do not spread in a thick Si layer above quantum dots, but completely relax via the formation of a thin boundary layer of mixed comp…
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The method of software analysis of high-resolution TEM images using the peak pairs algorithm in combination with Raman spectroscopy was employed to study lattice deformations in Ge/Si(001) structures with low-temperature Ge quantum dots. It was found that the stresses do not spread in a thick Si layer above quantum dots, but completely relax via the formation of a thin boundary layer of mixed composition. However, intermixing of Ge and Si is absent beneath the Ge layer in samples with a Ge coverage of 10 Å. Besides intermixing was not observed at all, both beneath and above the Ge layer, in samples with a Ge coverage of 6 Å or less. This may be due to the predominance of Ge diffusion into the Si matrix from the {105} facets of Ge huts, not from the Ge wetting layer, at low temperatures of the Ge/Si structure deposition. The critical thickness of Si coverage at which the intense stress-induced diffusion takes place is determined to lie in the range from 5 to 8 nm.
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Submitted 9 February, 2020; v1 submitted 16 July, 2019;
originally announced July 2019.
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Ultrathin and ultrasmooth gold films on monolayer MoS2
Authors:
Dmitry I. Yakubovsky,
Yury V. Stebunov,
Roman V. Kirtaev,
Georgy A. Ermolaev,
Mikhail S. Mironov,
Sergey M. Novikov,
Aleksey V. Arsenin,
Valentyn S. Volkov
Abstract:
Sub-10 nm continuous metal films are promising candidates for flexible and transparent nanophotonics and optoelectronics applications. In this Letter, we demonstrate that monolayer MoS2 is a perspective adhesion layer for the deposition of continuous conductive gold films with a thickness of only 3-4 nm. Optical properties of continuous ultrathin gold films deposited on two-dimensional MoS2 grown…
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Sub-10 nm continuous metal films are promising candidates for flexible and transparent nanophotonics and optoelectronics applications. In this Letter, we demonstrate that monolayer MoS2 is a perspective adhesion layer for the deposition of continuous conductive gold films with a thickness of only 3-4 nm. Optical properties of continuous ultrathin gold films deposited on two-dimensional MoS2 grown by chemical vapor deposition are investigated by spectroscopic ellipsometry over a wide wavelength range (300-3300 nm). Results show that optical losses in ultrathin films increase with decreasing thickness due to the fine-grained structure and the presence of a small number of voids, however, they exhibit metallic properties down to a thickness of 3-4 nm. The atomic-scale MoS2 interfaces can be transferred to any substrate and thus open up new opportunities for the creation of metasurfaces and a new type of van der Waals heterostructures with atomically thin metal layers.
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Submitted 29 December, 2018;
originally announced December 2018.
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Laser writing of bright colours on near-percolation plasmonic reflector arrays
Authors:
Alexander S. Roberts,
Sergey M. Novikov,
Yuanqing Yang,
Yiting Chen,
Sergejs Boroviks,
Jonas Beermann,
N. Asger Mortensen,
Sergey I. Bozhevolnyi
Abstract:
Colouration by surface nanostructuring has attracted a great deal of attention by the virtue of making use of environment-friendly recyclable materials and generating non-bleaching colours [1-8]. Recently, it was found possible to delegate the task of colour printing to laser post-processing that modifies carefully designed and fabricated nanostructures [9,10]. Here we take the next crucial step i…
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Colouration by surface nanostructuring has attracted a great deal of attention by the virtue of making use of environment-friendly recyclable materials and generating non-bleaching colours [1-8]. Recently, it was found possible to delegate the task of colour printing to laser post-processing that modifies carefully designed and fabricated nanostructures [9,10]. Here we take the next crucial step in the development of structural colour printing by dispensing with preformed nanostructures and using instead near-percolation metal films atop dielectric-metal sandwiches, i.e., near-percolation plasmonic reflector arrays. Scanning rapidly (~ 20 μm/s) across 4-nm-thin island-like gold films supported by 30-nm-thin silica layers atop 100-nm-thick gold layers with a strongly focused Ti-sapphire laser beam, while adjusting the average laser power from 1 to 10 mW, we produce bright colours varying from green to red by laser-heating-induced merging and reshaping of gold islands. Selection of strongly heated islands and their reshaping, both originating from the excitation of plasmonic resonances, are strongly influenced by the polarization direction of laser illumination, so that the colours produced are well pronounced only when viewed with the same polarization. Conversely, the laser colour writing with circular polarizations results in bright polarization-independent colour images. The fabrication procedure for near-percolation reflector arrays is exceedingly simple and scalable to mass production, while the laser-induced modification occurs inherently with the subwavelength resolution. This unique combination of remarkable features makes the approach developed for laser colour writing readily amenable for practical implementation and use in diverse applications ranging from nanoscale patterning for security marking to large-scale colour printing for decoration.
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Submitted 14 August, 2018;
originally announced August 2018.
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Direct amplitude-phase near-field observation of higher-order anapole states
Authors:
Vladimir A. Zenin,
Andrey B. Evlyukhin,
Sergey M. Novikov,
Yuanqing Yang,
Radu Malureanu,
Andrei V. Lavrinenko,
Boris N. Chichkov,
Sergey I. Bozhevolnyi
Abstract:
Anapole states associated with the resonant suppression of electric-dipole scattering exhibit minimized extinction and maximized storage of electromagnetic energy inside a particle. Using numerical simulations, optical extinction spectroscopy and amplitude-phase near-field mapping of silicon dielectric disks, we demonstrate high-order anapole states in the near-infrared wavelength range (900-1700…
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Anapole states associated with the resonant suppression of electric-dipole scattering exhibit minimized extinction and maximized storage of electromagnetic energy inside a particle. Using numerical simulations, optical extinction spectroscopy and amplitude-phase near-field mapping of silicon dielectric disks, we demonstrate high-order anapole states in the near-infrared wavelength range (900-1700 nm). We develop the procedure for unambiguously identifying anapole states by monitoring the normal component of the electric near-field and experimentally detect the first two anapole states as verified by far-field extinction spectroscopy and confirmed with the numerical simulations. We demonstrate that higher order anapole states possess stronger energy concentration and narrower resonances, a remarkable feature that is advantageous for their applications in metasurfaces and nanophotonics components, such as non-linear higher-harmonic generators and nanoscale lasers.
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Submitted 16 November, 2017; v1 submitted 15 November, 2017;
originally announced November 2017.
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Optical reconfiguration and polarization control in semi-continuous gold films close to the percolation threshold
Authors:
Christian Frydendahl,
Taavi Repän,
Mathias Geisler,
Sergey M. Novikov,
Jonas Beermann,
Andrei Lavrinenko,
Sanshui Xiao,
Sergey I. Bozhevolnyi,
N. Asger Mortensen,
Nicolas Stenger
Abstract:
Controlling and confining light by exciting plasmons in resonant metallic nanostructures is an essential aspect of many new emerging optical technologies. Here we explore the possibility of controllably reconfiguring the intrinsic optical properties of semi-continuous gold films, by inducing permanent morphological changes with a femtosecond (fs)-pulsed laser above a critical power. Optical transm…
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Controlling and confining light by exciting plasmons in resonant metallic nanostructures is an essential aspect of many new emerging optical technologies. Here we explore the possibility of controllably reconfiguring the intrinsic optical properties of semi-continuous gold films, by inducing permanent morphological changes with a femtosecond (fs)-pulsed laser above a critical power. Optical transmission spectroscopy measurements show a correlation between the spectra of the morphologically modified films and the wavelength, polarization, and the intensity of the laser used for alteration. In order to understand the modifications induced by the laser writing, we explore the near-field properties of these films with electron energy-loss spectroscopy (EELS). A comparison between our experimental data and full-wave simulations on the exact film morphologies hints toward a restructuring of the intrinsic plasmonic eigenmodes of the metallic film by photothermal effects. We explain these optical changes with a simple model and demonstrate experimentally that laser writing can be used to controllably modify the optical properties of these semi-continuous films. These metal films offer an easy-to-fabricate and scalable platform for technological applications such as molecular sensing and ultra-dense data storage.
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Submitted 27 April, 2017;
originally announced April 2017.
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White light generation and anisotropic damage in gold films near percolation threshold
Authors:
Sergey M. Novikov,
Christian Frydendahl,
Jonas Beermann,
Vladimir A. Zenin,
Nicolas Stenger,
Victor Coello,
N. Asger Mortensen,
Sergey I. Bozhevolnyi
Abstract:
Strongly enhanced and confined electromagnetic fields generated in metal nanostructures upon illumination are exploited in many emerging technologies by either fabricating sophisticated nanostructures or synthesizing colloid nanoparticles. Here we study effects driven by field enhancement in vanishingly small gaps between gold islands in thin films near the electrically determined percolation thre…
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Strongly enhanced and confined electromagnetic fields generated in metal nanostructures upon illumination are exploited in many emerging technologies by either fabricating sophisticated nanostructures or synthesizing colloid nanoparticles. Here we study effects driven by field enhancement in vanishingly small gaps between gold islands in thin films near the electrically determined percolation threshold. Optical explorations using two-photon luminescence (TPL) and near-field microscopies reveals super-cubic TPL power dependencies with white-light spectra, establishing unequivocally that the strongest TPL signals are generated with close to the percolation threshold films, and occurrence of extremely confined (~ 30 nm)and strongly enhanced (~ 100 times) fields at the illumination wavelength. For linearly polarized and sufficiently powerful light, we observe pronounced optical damage with TPL images being sensitive to both wavelength and polarization of illuminating light. We relate these effects to thermally induced morphological changes observed with scanning electron microscopy images. Fascinating physics involved in light interaction with near-percolation metal films along with their straightforward and scalable one-step fabrication procedure promises a wide range of fascinating developments and technological applications within diverse areas of modern nanotechnology, from bio-molecule optical sensing to ultra-dense optical data storage.
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Submitted 7 January, 2017;
originally announced January 2017.
