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Evaluation of Circular Complex Permeability in Single-Crystal Yttrium Iron Garnet at Cryogenic Temperatures
Authors:
Junta Igarashi,
Shota Norimoto,
Hiroyuki Kayano,
Noriyoshi Hashimoto,
Makoto Minohara,
Nobu-Hisa Kaneko,
Tomonori Arakawa
Abstract:
The operation of superconducting qubits requires a sensitive readout circuit at cryogenic temperatures, driving the demand for cryogenic non-reciprocal microwave components such as circulators. However, evaluating these components at low temperatures presents significant challenges for companies and institutions without specialized measurement systems. In the development of such cryogenic non-reci…
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The operation of superconducting qubits requires a sensitive readout circuit at cryogenic temperatures, driving the demand for cryogenic non-reciprocal microwave components such as circulators. However, evaluating these components at low temperatures presents significant challenges for companies and institutions without specialized measurement systems. In the development of such cryogenic non-reciprocal components, the temperature dependence of ferrite's magnetic properties is the most critical factor. Therefore, an evaluation technique for accurately assessing these properties at cryogenic temperatures is essential.
In this study, we develop a measurement method to characterize low-loss ferrite materials over a temperature range of 300 K to 2 K. The use of the circularly polarized resonance mode (TE11n) enables the direct estimation of circular complex permeability and the determination of key material parameters, including saturation magnetization and damping constant - both essential for assessing the performance of ferrite materials in circulator applications. Without the need for device fabrication, we demonstrate that single-crystal Yttrium Iron Garnet (YIG) can effectively function as a circulator down to 2 K. This approach offers a promising pathway for the development of cryogenic circulators.
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Submitted 9 April, 2025;
originally announced April 2025.
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Statistical study and parallelisation of multiplexed single-electron sources
Authors:
S. Norimoto,
P. See,
N. Schoinas,
I. Rungger,
T. O. Boykin II,
M. D. Stewart Jr,
J. P. Griffiths,
C. Chen,
D. A. Ritchie,
M. Kataoka
Abstract:
Increasing electric current from a single-electron source is a main challenge in an effort to establish the standard of the ampere defined by the fixed value of the elementary charge $e$ and operation frequency $f$. While the current scales with $f$, due to an operation frequency limit for maintaining accurate single-electron transfer, parallelisation of singleelectron sources is expected to be a…
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Increasing electric current from a single-electron source is a main challenge in an effort to establish the standard of the ampere defined by the fixed value of the elementary charge $e$ and operation frequency $f$. While the current scales with $f$, due to an operation frequency limit for maintaining accurate single-electron transfer, parallelisation of singleelectron sources is expected to be a more practical solution to increase the generated electric current $I = Nef$, where $N$ is a number of parallelised devices. One way to parallelise single-electron sources without increasing the complexity in device operation is to use a common gate. Such a scheme will require each device to have the same operation parameters for single-electron transfer. In order to investigate this possibility, we study the statistics for operation gate voltages using single-electron sources embedded in a multiplexer circuit. The multiplexer circuit allows us to measure 64 single-electron sources individually in a single cooldown. We also demonstrate the parallelisation of three single-electron sources and observe the generated current enhanced by a factor of three.
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Submitted 8 July, 2024;
originally announced July 2024.
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Photon emission by hot electron injection across a lateral \textit{pn} junction
Authors:
S. Norimoto,
R. Saxena,
P. See,
A. Nasir,
J. P. Griffiths,
C. Chen,
D. A. Ritchie,
M. Kataoka
Abstract:
We demonstrate a method to generate photons by injecting hot electrons into a {\it pn} junction within a \ce{GaAs/AlGaAs} heterostructure. Hot electrons are generated by biasing across a mesoscopic potential in {\it n}-type region and travel toward {\it p}-type region through quantum Hall edge channel in the presence of magnetic field perpendicular to the substrate. The {\it p}-type region is crea…
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We demonstrate a method to generate photons by injecting hot electrons into a {\it pn} junction within a \ce{GaAs/AlGaAs} heterostructure. Hot electrons are generated by biasing across a mesoscopic potential in {\it n}-type region and travel toward {\it p}-type region through quantum Hall edge channel in the presence of magnetic field perpendicular to the substrate. The {\it p}-type region is created several microns away from the hot electron emitter by inducing interfacial charges using a surface gate. The energy relaxation of the hot electrons is suppressed by separating the orbitals before and after longitudinal-optical (LO) phonon emission. This technique enables the hot electrons to reach the {\it p}-type region and to recombine with induced holes followed by photon emissions. Hot electron-induced hole recombination is confirmed by a peak around \qty{810}{nm} in an optical spectrum that corresponds to excitonic recombination in a \ce{GaAs} quantum well. An asymmetric structure observed in the optical spectrum as a function of the magnetic field originates from the chiral transport of the hot electrons in the Hall edge channel. We propose the combination of our technology and on-demand single-electron source would enable the development of an on-demand single photon source that is an essential building block to drive an optical quantum circuit and to transfer quantum information for a long distance.
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Submitted 6 June, 2024;
originally announced June 2024.
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Fast characterization of multiplexed single-electron pumps with machine learning
Authors:
N. Schoinas,
Y. Rath,
S. Norimoto,
W. Xie,
P. See,
J. P. Griffiths,
C. Chen,
D. A. Ritchie,
M. Kataoka,
A. Rossi,
I. Rungger
Abstract:
We present an efficient machine learning based automated framework for the fast tuning of single-electron pump devices into current quantization regimes. It uses a sparse measurement approach based on an iterative active learning algorithm to take targeted measurements in the gate voltage parameter space. When compared to conventional parameter scans, our automated framework allows us to decrease…
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We present an efficient machine learning based automated framework for the fast tuning of single-electron pump devices into current quantization regimes. It uses a sparse measurement approach based on an iterative active learning algorithm to take targeted measurements in the gate voltage parameter space. When compared to conventional parameter scans, our automated framework allows us to decrease the number of measurement points by about an order of magnitude. This corresponds to an eight-fold decrease in the time required to determine quantization errors, which are estimated via an exponential extrapolation of the first current plateau embedded into the algorithm. We show the robustness of the framework by characterizing 28 individual devices arranged in a GaAs/AlGaAs multiplexer array, which we use to identify a subset of devices suitable for parallel operation at communal gate voltages. The method opens up the possibility to efficiently scale the characterization of such multiplexed devices to a large number of pumps.
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Submitted 17 September, 2024; v1 submitted 31 May, 2024;
originally announced May 2024.
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Large Zeeman Splitting in Out-of-Plane Magnetic Field in a Double-Layer Quantum Point Contact
Authors:
D. Terasawa,
S. Norimoto,
T. Arakawa,
M. Ferrier,
A. Fukuda,
K. Kobayashi,
Y. Hirayama
Abstract:
In this study, we observe that the conductance of a quantum point contact on a GaAs/AlGaAs double quantum well depends significantly on the magnetic field perpendicular to the two-dimensional electron gas. In the presence of the magnetic field, the subband edge splitting due to the Zeeman energy reaches 0.09 meV at 0.16 T, thereby suggesting an enhanced g-factor. The estimated g-factor enhancement…
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In this study, we observe that the conductance of a quantum point contact on a GaAs/AlGaAs double quantum well depends significantly on the magnetic field perpendicular to the two-dimensional electron gas. In the presence of the magnetic field, the subband edge splitting due to the Zeeman energy reaches 0.09 meV at 0.16 T, thereby suggesting an enhanced g-factor. The estimated g-factor enhancement is 17.5 times that of the bare value. It is considered that a low electron density and high mobility makes it possible to reach a strong many-body interaction regime in which this type of strong enhancement in g-factor can be observed.
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Submitted 26 January, 2021;
originally announced January 2021.
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Etching process of narrow wire and application to tunable-barrier electron pump
Authors:
Shota Norimoto,
Shuichi Iwakiri,
Masahiko Yokoi,
Tomonori Arakawa,
Yasuhiro Niimi,
Kensuke Kobayashi
Abstract:
Single electron sources have been studied as a device to establish an electric current standard for 30 years and recently as an on-demand coherent source for Fermion quantum optics. In order to construct the single electron source on a GaAs/AlGaAs two-dimensional electron gas (2DEG), it is often necessary to fabricate a sub-micron wire by etching. We have established techniques to make the wire ma…
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Single electron sources have been studied as a device to establish an electric current standard for 30 years and recently as an on-demand coherent source for Fermion quantum optics. In order to construct the single electron source on a GaAs/AlGaAs two-dimensional electron gas (2DEG), it is often necessary to fabricate a sub-micron wire by etching. We have established techniques to make the wire made of the fragile 2DEG by combining photolithography and electron beam lithography with one-step photoresist coating, which enables us to etch fine and coarse structures simultaneously. It has been demonstrated that a single electron source fabricated on the narrow wire pumps fixed number of electrons per one cycle with radio frequency. The fabrication technique improves the lithography process with lower risk to damage the 2DEG and is applicable to etching of other materials and dry etching.
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Submitted 21 May, 2020;
originally announced May 2020.
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Conductance quantization and shot noise of a double-layer quantum point contact
Authors:
D. Terasawa,
S. Norimoto,
T. Arakawa,
M. Ferrier,
A. Fukuda,
K. Kobayashi,
Y. Hirayama
Abstract:
The conductance quantization and shot noise below the first conductance plateau $G_0 = 2e^2/h$ are measured in a quantum point contact fabricated in a GaAs/AlGaAs tunnel-coupled double quantum well. From the conductance measurement, we observe a clear quantized conductance plateau at $0.5G_0$ and a small minimum in the transconductance at $0.7 G_0$. Spectroscopic transconductance measurement revea…
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The conductance quantization and shot noise below the first conductance plateau $G_0 = 2e^2/h$ are measured in a quantum point contact fabricated in a GaAs/AlGaAs tunnel-coupled double quantum well. From the conductance measurement, we observe a clear quantized conductance plateau at $0.5G_0$ and a small minimum in the transconductance at $0.7 G_0$. Spectroscopic transconductance measurement reveals three maxima inside the first diamond, thus suggesting three minima in the dispersion relation for electric subbands. Shot noise measurement shows that the Fano factor behavior is consistent with this observation. We propose a model that relates these features to a wavenumber directional split subband due to a strong Rashba spin--orbit interaction that is induced by the center barrier potential gradient of the double-layer sample.
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Submitted 23 March, 2020; v1 submitted 13 February, 2020;
originally announced February 2020.
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Finite shot noise and electron heating at quantized conductance in high-mobility quantum point contacts
Authors:
Tatsuya Muro,
Yoshitaka Nishihara,
Shota Norimoto,
Meydi Ferrier,
Tomonori Arakawa,
Kensuke Kobayashi,
Thomas Ihn,
Clemens Rossler,
Klaus Ensslin,
Christian Reichl,
Werner Wegscheider
Abstract:
We report a precise experimental study on the shot noise of a quantum point contact (QPC) fabricated in a GaAs/AlGaAs based high-mobility two-dimensional electron gas (2DEG). The combination of unprecedented cleanliness and very high measurement accuracy has enabled us to discuss the Fano factor to characterize the shot noise with a precision of 1 %. We observed that the shot noise at zero magneti…
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We report a precise experimental study on the shot noise of a quantum point contact (QPC) fabricated in a GaAs/AlGaAs based high-mobility two-dimensional electron gas (2DEG). The combination of unprecedented cleanliness and very high measurement accuracy has enabled us to discuss the Fano factor to characterize the shot noise with a precision of 1 %. We observed that the shot noise at zero magnetic field exhibits a slight enhancement exceeding the single particle theoretical prediction, and that it gradually decreases as a perpendicular magnetic field is applied. We also confirmed that this additional noise completely vanishes in the quantum Hall regime. These phenomena can be explained by the electron heating effect near the QPC, which is suppressed with increasing magnetic field.
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Submitted 15 May, 2017;
originally announced May 2017.
