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Accelerating the prediction of inorganic surfaces with machine learning interatomic potentials
Authors:
Kyle Noordhoek,
Christopher J. Bartel
Abstract:
The surface properties of solid-state materials often dictate their functionality, especially for applications where nanoscale effects become important. The relevant surface(s) and their properties are determined, in large part, by the materials synthesis or operating conditions. These conditions dictate thermodynamic driving forces and kinetic rates responsible for yielding the observed surface s…
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The surface properties of solid-state materials often dictate their functionality, especially for applications where nanoscale effects become important. The relevant surface(s) and their properties are determined, in large part, by the materials synthesis or operating conditions. These conditions dictate thermodynamic driving forces and kinetic rates responsible for yielding the observed surface structure and morphology. Computational surface science methods have long been applied to connect thermochemical conditions to surface phase stability, particularly in the heterogeneous catalysis and thin film growth communities. This review provides a brief introduction to first-principles approaches to compute surface phase diagrams before introducing emerging data-driven approaches. The remainder of the review focuses on the application of machine learning, predominantly in the form of learned interatomic potentials, to study complex surfaces. As machine learning algorithms and large datasets on which to train them become more commonplace in materials science, computational methods are poised to become even more predictive and powerful for modeling the complexities of inorganic surfaces at the nanoscale.
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Submitted 18 December, 2023;
originally announced December 2023.
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Surface-Driven Evolution of the Anomalous Hall Effect in Magnetic Topological Insulator MnBi2Te4 Thin Films
Authors:
Alessandro R. Mazza,
Jason Lapano,
Harry M. Meyer III,
Christopher T. Nelson,
Tyler Smith,
Yun-Yi Pai,
Kyle Noordhoek,
Benjamin J. Lawrie,
Timothy R. Charlton,
Robert G. Moore,
T. Zac Ward,
Mao-Hua Du,
Gyula Eres,
Matthew Brahlek
Abstract:
Understanding the effects of interfacial modification to the functional properties of magnetic topological insulator thin films is crucial for developing novel technological applications from spintronics to quantum computing. Here, we report that a large electronic and magnetic response is induced in the intrinsic magnetic topological insulator MnBi2Te4 by controlling the propagation of surface ox…
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Understanding the effects of interfacial modification to the functional properties of magnetic topological insulator thin films is crucial for developing novel technological applications from spintronics to quantum computing. Here, we report that a large electronic and magnetic response is induced in the intrinsic magnetic topological insulator MnBi2Te4 by controlling the propagation of surface oxidation. We show that the formation of the surface oxide layer is confined to the top 1-2 unit cells but drives large changes in the overall magnetic response. Specifically, we observe a dramatic reversal of the sign of the anomalous Hall effect driven by finite thickness magnetism, which indicates that the film splits into distinct magnetic layers each with a unique electronic signature. These data reveal a delicate dependence of the overall magnetic and electronic response of MnBi2Te4 on the stoichiometry of the top layers. Our study suggests that perturbations resulting from surface oxidation may play a non-trivial role in the stabilization of the quantum anomalous Hall effect in this system and that understanding targeted modifications to the surface may open new routes for engineering novel topological and magnetic responses in this fascinating material.
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Submitted 22 May, 2022;
originally announced May 2022.
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Anomalous Magnetoresistance by Breaking Ice Rule in Bi2Ir2O7/Dy2Ti2O7 Heterostructure
Authors:
H. Zhang,
C. K. Xing,
K. Noordhoek,
Z. Liu,
T. H. Zhao,
L. Horák,
Q. Huang,
L. Hao,
J. Yang,
S. Pandey,
E. Dagotto,
Z. Jiang,
J. H. Chu,
Y. Xin,
E. S. Choi,
H. D. Zhou,
J. Liu
Abstract:
While geometrically frustrated quantum magnets are known for a variety of exotic spin states that are of great interests of understanding emergent phenomena as well as enabling revolutionary quantum technologies, most of them are necessarily good insulators which are difficult to be integrated with modern electrical circuit that relies on moving charge carriers. The grand challenge of converting f…
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While geometrically frustrated quantum magnets are known for a variety of exotic spin states that are of great interests of understanding emergent phenomena as well as enabling revolutionary quantum technologies, most of them are necessarily good insulators which are difficult to be integrated with modern electrical circuit that relies on moving charge carriers. The grand challenge of converting fluctuations and excitations of frustrated moments into electronic responses is finding ways to introduce charge carriers that interact with the localized spins without destroying the spin states. Here, we show that, by designing a Bi2Ir2O7/Dy2Ti2O7 heterostructure, the breaking of the spin ice rule in insulating Dy2Ti2O7 can lead to a charge response in the Bi2Ir2O7 conducting layer that can be detected as anomalous magnetoresistance. These results demonstrate a novel and feasible interfacial approach for electronically probing exotic spin states in insulating magnets, laying out a blueprint for the metallization of frustrated quantum magnets.
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Submitted 22 December, 2021; v1 submitted 17 November, 2020;
originally announced November 2020.
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Anomalous Magnetoresistance in Centrosymmetric Skyrmion-Lattice Magnet Gd2PdSi3
Authors:
Han Zhang,
Qing Huang,
Lin Hao,
Junyi Yang,
Kyle Noordhoek,
Shashi Pandey,
Haidong Zhou,
Jian Liu
Abstract:
We performed a systematic study of the temperature- and field-dependence of magnetization and resistivity of Gd2PdSi3, which is a centrosymmetric skyrmion crystal. While the magnetization behavior is consistent with the reported phase diagram based on susceptibility, we show that a phase diagram can also be constructed based on the anomalous magnetoresistance with one-to-one correspondence among a…
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We performed a systematic study of the temperature- and field-dependence of magnetization and resistivity of Gd2PdSi3, which is a centrosymmetric skyrmion crystal. While the magnetization behavior is consistent with the reported phase diagram based on susceptibility, we show that a phase diagram can also be constructed based on the anomalous magnetoresistance with one-to-one correspondence among all the features. In addition, the crossover boundary into the field-induced ferromagnetic state is also identified. Our results suggest that the ferromagnetic spin fluctuations above the Néel temperature play a key role in the high sensitivity of the resistivity anomalies to magnetic field, pointing to the rich interplay of different magnetic correlations at zero and finite wave vectors underlying the skyrmion lattice in this frustrated itinerant magnet.
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Submitted 20 April, 2020;
originally announced April 2020.
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Comprehensive Control of Metamagnetic Transition of Antiferromagnetic Mott Insulator Sr2IrO4 by in-situ Anisotropic Strain
Authors:
H. Zhang,
L. Hao,
J. Yang,
J. Mutch,
Z. Liu,
Q. Huang,
K. Noordhoek,
A. F. May,
J. -H. Chu,
J. W. Kim,
P. J. Ryan,
H. D. Zhou,
Jian Liu
Abstract:
Metamagnetism in antiferromagnets exhibits distinct critical behaviors and dynamics when invoking spin reversal and rotation. Here we show a 0.05% anisotropic strain suffices to in-situ modulate the metamagnetic critical field of the Mott insulator Sr2IrO4 by over 50%, enabling electrical switching of the transition. Resonant x-ray scattering and model simulation reveal that the transition is comp…
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Metamagnetism in antiferromagnets exhibits distinct critical behaviors and dynamics when invoking spin reversal and rotation. Here we show a 0.05% anisotropic strain suffices to in-situ modulate the metamagnetic critical field of the Mott insulator Sr2IrO4 by over 50%, enabling electrical switching of the transition. Resonant x-ray scattering and model simulation reveal that the transition is completely tuned from the spin-flop to spin-flip type as the strain introduces C4-symmetry-breaking magnetic anisotropy. Simultaneous transport study indicates the metamagnetic responses are reflected in the large elasto- and magnetoconductance, highlighting the active charge degree of freedom in the spin-orbit-coupled Mott state and its potential for spin-electronics.
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Submitted 22 July, 2020; v1 submitted 21 November, 2019;
originally announced November 2019.
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Epitaxial stabilization of Sr3Ir2O7 thin films
Authors:
Junyi Yang,
Lin Hao,
Peyton Nanney,
Kyle Noordhoek,
Derek Meyers,
Lukas Horak,
Joshua Sanchez,
Jiun-Haw Chu,
Christie Nelson,
Mark. P. M. Dean,
Jian Liu
Abstract:
Ruddlesden-popper type Srn+1IrnO3n+1 compound is a major focus of condensed matter physics where the subtle balance between electron-electron correlation, spin-orbit interaction and crystal field effect brings a host of emergent phenomena. While it is understandable that a canted antiferromagnetic (AFM) insulating state with an easy-plane anisotropy is developed in Sr2IrO4 as the 2D limit of the s…
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Ruddlesden-popper type Srn+1IrnO3n+1 compound is a major focus of condensed matter physics where the subtle balance between electron-electron correlation, spin-orbit interaction and crystal field effect brings a host of emergent phenomena. While it is understandable that a canted antiferromagnetic (AFM) insulating state with an easy-plane anisotropy is developed in Sr2IrO4 as the 2D limit of the series, it is intriguing that bilayer Sr3Ir2O7, with slightly higher effective dimensionality, stabilizes c-axis collinear antiferromagnetism. This also renders Sr3Ir2O7 as a unique playground to study exotic physics near a critical spin transition point. However, the epitaxial growth of the Sr3Ir2O7 is still a challenging task because of the narrow growth window. In our research, we have studied the thermodynamic process during synthesis of Sr3Ir2O7 thin films. We successfully expanded the synthesis window by mapping out the relation between the thin film sample crystal structure and gas pressure. Our work thus provides a more accessible avenue to stabilize metastable materials.
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Submitted 29 April, 2019;
originally announced April 2019.
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Possible Scale Invariant Linear Magnetoresistance in Pyrochlore Iridates Bi$_2$Ir$_2$O$_7$
Authors:
Jiun-Haw Chu,
Jian Liu,
Han Zhang,
Kyle Noordhoek,
Scott. C. Riggs,
Maxwell Shapiro,
Claudy Ryan Serero,
Di Yi,
M. Melissa,
S. J. Suresha,
C. Frontera,
E. Arenholz,
Ashvin Vishwanath,
Xavi Marti,
I. R. Fisher,
R. Ramesh
Abstract:
We report the observation of a linear magnetoresistance in single crystals and epitaxial thin films of the pyrochlore iridate Bi$_2$Ir$_2$O$_7$. The linear magnetoresistance is positive and isotropic at low temperatures, without any sign of saturation up to 35 Tesla. As temperature increases, the linear field dependence gradually evolves to a quadratic field dependence. The temperature and field d…
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We report the observation of a linear magnetoresistance in single crystals and epitaxial thin films of the pyrochlore iridate Bi$_2$Ir$_2$O$_7$. The linear magnetoresistance is positive and isotropic at low temperatures, without any sign of saturation up to 35 Tesla. As temperature increases, the linear field dependence gradually evolves to a quadratic field dependence. The temperature and field dependence of magnetoresistance of Bi$_2$Ir$_2$O$_7$ bears strikingly resemblance to the scale invariant magnetoresistance observed in the strange metal phase in high Tc cuprates. However, the residual resistivity of Bi$_2$Ir$_2$O$_7$ is more than two orders of magnitude higher than the curpates. Our results suggest that the correlation between linear magnetoresistance and quantum fluctuations may exist beyond high temperature superconductors.
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Submitted 21 November, 2019; v1 submitted 18 September, 2013;
originally announced September 2013.