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Electrically driven electron spin resonance mediated by spin-valley-orbit coupling in a silicon quantum dot
Authors:
Andrea Corna,
Léo Bourdet,
Romain Maurand,
Alessandro Crippa,
Dharmraj Kotekar-Patil,
Heorhii Bohuslavskyi,
Romain Lavieville,
Louis Hutin,
Sylvain Barraud,
Xavier Jehl,
Maud Vinet,
Silvano De Franceschi,
Yann-Michel Niquet,
Marc Sanquer
Abstract:
The ability to manipulate electron spins with voltage-dependent electric fields is key to the operation of quantum spintronics devices, such as spin-based semiconductor qubits. A natural approach to electrical spin control exploits the spin-orbit coupling (SOC) inherently present in all materials. So far, this approach could not be applied to electrons in silicon, due to their extremely weak SOC.…
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The ability to manipulate electron spins with voltage-dependent electric fields is key to the operation of quantum spintronics devices, such as spin-based semiconductor qubits. A natural approach to electrical spin control exploits the spin-orbit coupling (SOC) inherently present in all materials. So far, this approach could not be applied to electrons in silicon, due to their extremely weak SOC. Here we report an experimental realization of electrically driven electron-spin resonance in a silicon-on-insulator (SOI) nanowire quantum dot device. The underlying driving mechanism results from an interplay between SOC and the multi-valley structure of the silicon conduction band, which is enhanced in the investigated nanowire geometry. We present a simple model capturing the essential physics and use tight-binding simulations for a more quantitative analysis. We discuss the relevance of our findings to the development of compact and scalable electron-spin qubits in silicon.
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Submitted 7 February, 2018; v1 submitted 9 August, 2017;
originally announced August 2017.
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Strain-induced spin resonance shifts in silicon devices
Authors:
J. J. Pla,
A. Bienfait,
G. Pica,
J. Mansir,
F. A. Mohiyaddin,
Z. Zeng,
Y. M. Niquet,
A. Morello,
T. Schenkel,
J. J. L. Morton,
P. Bertet
Abstract:
In spin-based quantum information processing devices, the presence of control and detection circuitry can change the local environment of a spin by introducing strain and electric fields, altering its resonant frequencies. These resonance shifts can be large compared to intrinsic spin line-widths and it is therefore important to study, understand and model such effects in order to better predict d…
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In spin-based quantum information processing devices, the presence of control and detection circuitry can change the local environment of a spin by introducing strain and electric fields, altering its resonant frequencies. These resonance shifts can be large compared to intrinsic spin line-widths and it is therefore important to study, understand and model such effects in order to better predict device performance. Here we investigate a sample of bismuth donor spins implanted in a silicon chip, on top of which a superconducting aluminium micro-resonator has been fabricated. The on-chip resonator provides two functions: first, it produces local strain in the silicon due to the larger thermal contraction of the aluminium, and second, it enables sensitive electron spin resonance spectroscopy of donors close to the surface that experience this strain. Through finite-element strain simulations we are able to reconstruct key features of our experiments, including the electron spin resonance spectra. Our results are consistent with a recently discovered mechanism for producing shifts of the hyperfine interaction for donors in silicon, which is linear with the hydrostatic component of an applied strain.
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Submitted 9 January, 2018; v1 submitted 25 August, 2016;
originally announced August 2016.
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Pauli Blockade in a Few-Hole PMOS Double Quantum Dot limited by Spin-Orbit Interaction
Authors:
Heorhii Bohuslavskyi,
Dharmraj Kotekar-Patil,
Romain Maurand,
Andrea Corna,
Sylvain Barraud,
Leo Bourdet,
Louis Hutin,
Yann-Michel Niquet,
Xavier Jehl,
Silvano De Franceschi,
Maud Vinet,
Marc Sanquer
Abstract:
We report on hole compact double quantum dots fabricated using conventional CMOS technology. We provide evidence of Pauli spin blockade in the few hole regime which is relevant to spin qubit implementations.
A current dip is observed around zero magnetic field, in agreement with the expected behavior for the case of strong spin-orbit. We deduce an intradot spin relaxation rate $\approx$120\,kHz…
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We report on hole compact double quantum dots fabricated using conventional CMOS technology. We provide evidence of Pauli spin blockade in the few hole regime which is relevant to spin qubit implementations.
A current dip is observed around zero magnetic field, in agreement with the expected behavior for the case of strong spin-orbit. We deduce an intradot spin relaxation rate $\approx$120\,kHz for the first holes, an important step towards a robust hole spin-orbit qubit.
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Submitted 22 September, 2016; v1 submitted 1 July, 2016;
originally announced July 2016.
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Germanium under high tensile stress: nonlinear dependence of direct band gap vs. strain
Authors:
K. Guilloy,
N. Pauc,
A. Gassenq,
Y. M. Niquet,
J. M. Escalante,
I. Duchemin,
S. Tardif,
G. Osvaldo Dias,
D. Rouchon,
J. Widiez,
J. M. Hartmann,
R. Geiger,
T. Zabel,
H. Sigg,
J. Faist,
A. Chelnokov,
V. Reboud,
V. Calvo
Abstract:
Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce the energy difference between its direct and indirect band gaps. However, the conventional deformation potential model most widely adopted to describe this transformation happens to have been investigated only up to 1 %…
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Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce the energy difference between its direct and indirect band gaps. However, the conventional deformation potential model most widely adopted to describe this transformation happens to have been investigated only up to 1 % uniaxially loaded strains. In this work, we use a micro-bridge geometry to uniaxially stress germanium along [100] up to $\varepsilon_{100}$=3.3 % longitudinal strain and then perform electro-absorption spectroscopy. We accurately measure the energy gap between the conduction band at the $Γ$ point and the light- and heavy-hole valence bands. While the experimental results agree with the conventional linear deformation potential theory up to 2 % strain, a significantly nonlinear behavior is observed at higher strains. We measure the deformation potential of germanium to be a = -9.1 $\pm$ 0.3 eV and b = -2.32 $\pm$ 0.06 eV and introduce a second order deformation potential. The experimental results are found to be well described by tight-binding simulations. These new high strain coefficients will be suitable for the design of future CMOS-compatible lasers and opto-electronic devices based on highly strained germanium.
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Submitted 24 June, 2016; v1 submitted 6 June, 2016;
originally announced June 2016.
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Accurate strain measurements in highly strained Ge microbridges
Authors:
A. Gassenq,
S. Tardif,
K. Guilloy,
G. Osvaldo Dias,
N. Pauc,
I. Duchemin,
D. Rouchon,
J-M. Hartmann,
J. Widiez,
J. Escalante,
Y-M. Niquet,
R. Geiger,
T. Zabel,
H. Sigg,
J. Faist,
A. Chelnokov,
F. Rieutord,
V. Reboud,
V. Calvo
Abstract:
Ge under high strain is predicted to become a direct bandgap semiconductor. Very large deformations can be introduced using microbridge devices. However, at the microscale, strain values are commonly deduced from Raman spectroscopy using empirical linear models only established up to 1.2% for uniaxial stress. In this work, we calibrate the Raman-strain relation at higher strain using synchrotron b…
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Ge under high strain is predicted to become a direct bandgap semiconductor. Very large deformations can be introduced using microbridge devices. However, at the microscale, strain values are commonly deduced from Raman spectroscopy using empirical linear models only established up to 1.2% for uniaxial stress. In this work, we calibrate the Raman-strain relation at higher strain using synchrotron based microdiffraction. The Ge microbridges show unprecedented high tensile strain up to 4.9 % corresponding to an unexpected 9.9 cm-1 Raman shift. We demonstrate experimentally and theoretically that the Raman strain relation is not linear and we provide a more accurate expression.
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Submitted 15 April, 2016;
originally announced April 2016.
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Uniaxially stressed germanium with fundamental direct band gap
Authors:
R. Geiger,
T. Zabel,
E. Marin,
A. Gassenq,
J. -M. Hartmann,
J. Widiez,
J. Escalante,
K. Guilloy,
N. Pauc,
D. Rouchon,
G. Osvaldo Diaz,
S. Tardif,
F. Rieutord,
I. Duchemin,
Y. -M. Niquet,
V. Reboud,
V. Calvo,
A. Chelnokov,
J. Faist,
H. Sigg
Abstract:
We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that enhance a biaxial strain of 0.16% up to 3.6% uniaxial tensile strain. Cooling the bridges to 20 K increases the uniaxial strain up to a maximum of 5.4%. Temperature-dependent photoluminescence reveals the crossover to a…
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We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that enhance a biaxial strain of 0.16% up to 3.6% uniaxial tensile strain. Cooling the bridges to 20 K increases the uniaxial strain up to a maximum of 5.4%. Temperature-dependent photoluminescence reveals the crossover to a fundamental direct band gap to occur between 4.0% and 4.5%. Our data are in good agreement with new theoretical computations that predict a strong bowing of the band parameters with strain.
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Submitted 10 December, 2015;
originally announced March 2016.
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Contact resistances in trigate and FinFET devices in a Non-Equilibrium Green's Functions approach
Authors:
Léo Bourdet,
Johan Pelloux-Prayer,
François Triozon,
Mikaël Cassé,
Sylvain Barraud,
Sébastien Martinie,
Denis Rideau,
Yann-Michel Niquet
Abstract:
We compute the contact resistances $R_{\rm c}$ in trigate and FinFET devices with widths and heights in the 4 to 24 nm range using a Non-Equilibrium Green's Functions approach. Electron-phonon, surface roughness and Coulomb scattering are taken into account. We show that $R_{\rm c}$ represents a significant part of the total resistance of devices with sub-30 nm gate lengths. The analysis of the qu…
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We compute the contact resistances $R_{\rm c}$ in trigate and FinFET devices with widths and heights in the 4 to 24 nm range using a Non-Equilibrium Green's Functions approach. Electron-phonon, surface roughness and Coulomb scattering are taken into account. We show that $R_{\rm c}$ represents a significant part of the total resistance of devices with sub-30 nm gate lengths. The analysis of the quasi-Fermi level profile reveals that the spacers between the heavily doped source/drain and the gate are major contributors to the contact resistance. The conductance is indeed limited by the poor electrostatic control over the carrier density under the spacers. We then disentangle the ballistic and diffusive components of $R_{\rm c}$, and analyze the impact of different design parameters (cross section and doping profile in the contacts) on the electrical performances of the devices. The contact resistance and variability rapidly increase when the cross sectional area of the channel goes below $\simeq 50$ nm$^2$. We also highlight the role of the charges trapped at the interface between silicon and the spacer material.
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Submitted 24 February, 2016;
originally announced February 2016.
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Phonon-limited carrier mobility and resistivity from carbon nanotubes to graphene
Authors:
Jing Li,
Henrique Pereira Coutada Miranda,
Yann-Michel Niquet,
Luigi Genovese,
Ivan Duchemin,
Ludger Wirtz,
Christophe Delerue
Abstract:
Under which conditions do the electrical transport properties of one-dimensional (1D) carbon nanotubes (CNTs) and 2D graphene become equivalent? We have performed atomistic calculations of the phonon-limited electrical mobility in graphene and in a wide range of CNTs of different types to address this issue. The theoretical study is based on a tight-binding method and a force-constant model from w…
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Under which conditions do the electrical transport properties of one-dimensional (1D) carbon nanotubes (CNTs) and 2D graphene become equivalent? We have performed atomistic calculations of the phonon-limited electrical mobility in graphene and in a wide range of CNTs of different types to address this issue. The theoretical study is based on a tight-binding method and a force-constant model from which all possible electron-phonon couplings are computed. The electrical resistivity of graphene is found in very good agreement with experiments performed at high carrier density. A common methodology is applied to study the transition from 1D to 2D by considering CNTs with diameter up to 16 nm. It is found that the mobility in CNTs of increasing diameter converges to the same value, the mobility in graphene. This convergence is much faster at high temperature and high carrier density. For small-diameter CNTs, the mobility strongly depends on chirality, diameter, and existence of a bandgap.
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Submitted 25 August, 2015; v1 submitted 16 April, 2015;
originally announced April 2015.
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Remote Surface Roughness Scattering in FDSOI devices with high-$κ$/SiO$_2$ gate stacks
Authors:
Y. M. Niquet,
I. Duchemin,
V. -H. Nguyen,
F. Triozon,
D. Rideau
Abstract:
We investigate remote surface scattering (RSR) by the SiO$_2$/HfO$_2$ interface in Fully-Depleted Silicon-on-Insulator (FDSOI) devices using Non-Equilibrium Green's Functions. We show that the RSR mobility is controlled by cross-correlations between the surface roughness profiles at the Si/SiO$_2$ and SiO$_2$/HfO$_2$ interfaces. Therefore, surface roughness and remote surface roughness can not be…
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We investigate remote surface scattering (RSR) by the SiO$_2$/HfO$_2$ interface in Fully-Depleted Silicon-on-Insulator (FDSOI) devices using Non-Equilibrium Green's Functions. We show that the RSR mobility is controlled by cross-correlations between the surface roughness profiles at the Si/SiO$_2$ and SiO$_2$/HfO$_2$ interfaces. Therefore, surface roughness and remote surface roughness can not be modeled as two independent mechanisms. RSR tends to enhance the total mobility when the Si/SiO$_2$ interface and SiO$_2$ thickness profiles are correlated, and to decrease the total mobility when they are anti-correlated. We discuss the implications for the high-$κ$/Metal gate technologies.
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Submitted 8 April, 2015;
originally announced April 2015.
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Topological states in multi-orbital HgTe honeycomb lattices
Authors:
W. Beugeling,
E. Kalesaki,
C. Delerue,
Y. -M. Niquet,
D. Vanmaekelbergh,
C. Morais Smith
Abstract:
Research on graphene has revealed remarkable phenomena arising in the honeycomb lattice. However, the quantum spin Hall effect predicted at the K point could not be observed in graphene and other honeycomb structures of light elements due to an insufficiently strong spin-orbit coupling. Here we show theoretically that 2D honeycomb lattices of HgTe can combine the effects of the honeycomb geometry…
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Research on graphene has revealed remarkable phenomena arising in the honeycomb lattice. However, the quantum spin Hall effect predicted at the K point could not be observed in graphene and other honeycomb structures of light elements due to an insufficiently strong spin-orbit coupling. Here we show theoretically that 2D honeycomb lattices of HgTe can combine the effects of the honeycomb geometry and strong spin-orbit coupling. The conduction bands, experimentally accessible via doping, can be described by a tight-binding lattice model as in graphene, but including multi-orbital degrees of freedom and spin-orbit coupling. This results in very large topological gaps (up to 35 meV) and a flattened band detached from the others. Owing to this flat band and the sizable Coulomb interaction, honeycomb structures of HgTe constitute a promising platform for the observation of a fractional Chern insulator or a fractional quantum spin Hall phase.
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Submitted 20 March, 2015;
originally announced March 2015.
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Control of the ionization state of 3 single donor atoms in silicon
Authors:
Benoit Voisin,
Manuel Cobian,
Xavier Jehl,
Yann-Michel Niquet,
Christophe Delerue,
Silvano De Franceschi,
Marc Sanquer
Abstract:
By varying the gate and substrate voltage in a short silicon-on-insulator trigate field effect transistor we control the ionization state of three arsenic donors. We obtain a good quantitative agreement between 3D electrostatic simulation and experiment for the control voltage at which the ionization takes place. It allows us observing the three doubly occupied states As- at strong electric field…
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By varying the gate and substrate voltage in a short silicon-on-insulator trigate field effect transistor we control the ionization state of three arsenic donors. We obtain a good quantitative agreement between 3D electrostatic simulation and experiment for the control voltage at which the ionization takes place. It allows us observing the three doubly occupied states As- at strong electric field in the presence of nearby source-drain electrodes.
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Submitted 5 March, 2014;
originally announced March 2014.
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Magneto-transport Subbands Spectroscopy in InAs Nanowires
Authors:
Florian Vigneau,
Vladimir Prudkovkiy,
Ivan Duchemin,
Walter Escoffier,
Philippe Caroff,
Yann-Michel Niquet,
Renaud Leturcq,
Michel Goiran,
Bertrand Raquet
Abstract:
We report on magneto-transport measurements in InAs nanowires under large magnetic field (up to 55T), providing a direct spectroscopy of the 1D electronic band structure. Large modulations of the magneto-conductance mediated by an accurate control of the Fermi energy reveal the Landau fragmentation, carrying the fingerprints of the confined InAs material. Our numerical simulations of the magnetic…
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We report on magneto-transport measurements in InAs nanowires under large magnetic field (up to 55T), providing a direct spectroscopy of the 1D electronic band structure. Large modulations of the magneto-conductance mediated by an accurate control of the Fermi energy reveal the Landau fragmentation, carrying the fingerprints of the confined InAs material. Our numerical simulations of the magnetic band structure consistently support the experimental results and reveal key parameters of the electronic confinement.
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Submitted 13 November, 2013;
originally announced November 2013.
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Quantum calculations of the carrier mobility in thin films: Methodology, Matthiessen's rule and comparison with semi-classical approaches
Authors:
Yann-Michel Niquet,
Viet-Hung Nguyen,
François Triozon,
Ivan Duchemin,
Olivier Nier,
Denis Rideau
Abstract:
We discuss the calculation of the carrier mobility in silicon films within the quantum Non-Equilibrium Green's Functions (NEGF) framework. We introduce a new method for the extraction of the carrier mobility that is free from contact resistance contamination, and provides accurate mobilities at a reasonable cost, with minimal needs for ensemble averages. We then introduce a new paradigm for the de…
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We discuss the calculation of the carrier mobility in silicon films within the quantum Non-Equilibrium Green's Functions (NEGF) framework. We introduce a new method for the extraction of the carrier mobility that is free from contact resistance contamination, and provides accurate mobilities at a reasonable cost, with minimal needs for ensemble averages. We then introduce a new paradigm for the definition of the partial mobility $μ_{M}$ associated with a given elastic scattering mechanism "M", taking phonons (PH) as a reference ($μ_{M}^{-1}=μ_{PH+M}^{-1}-μ_{PH}^{-1}$). We argue that this definition makes better sense in a quantum transport framework as it is free from long range interference effects that can appear in purely ballistic calculations. As a matter of fact, these mobilities satisfy Matthiessen's rule for three mechanisms [surface roughness (SR), remote Coulomb scattering (RCS) and phonons] much better than the usual, single mechanism calculations. We also discuss the problems raised by the long range spatial correlations in the RCS disorder. Finally, we compare semi-classical Kubo-Greenwood (KG) and quantum NEGF calculations. We show that KG and NEGF are in reasonable agreement for phonon and RCS, yet not for SR. We point to possible deficiencies in the treatment of SR scattering in KG, opening the way for further improvements.
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Submitted 7 October, 2013;
originally announced October 2013.
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Interplay between Aharonov-Bohm interference and parity selective tunneling in zigzag graphene nanoribbon rings
Authors:
Viet-Hung Nguyen,
Yann-Michel Niquet,
Philippe Dollfus
Abstract:
We report a numerical study on Aharonov-Bohm (AB) effect and parity selective tunneling in pn junctions based on zigzag graphene nanoribbon rings. We find that when applying a magnetic field to the ring, the AB interference can reverse the parity symmetry of incoming waves and hence can strongly modulate the parity selective transmission through the system. Therefore, the transmission between two…
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We report a numerical study on Aharonov-Bohm (AB) effect and parity selective tunneling in pn junctions based on zigzag graphene nanoribbon rings. We find that when applying a magnetic field to the ring, the AB interference can reverse the parity symmetry of incoming waves and hence can strongly modulate the parity selective transmission through the system. Therefore, the transmission between two states of different parity exhibits the AB oscillations with a π-phase shift, compared to the case of states of same parity. On this basis, it is shown that interesting effects such as giant (both positive and negative) magnetoresistance and strong negative differential conductance can be achieved in this structure. Our study thus presents a new property of the AB interference, which could be helpful to further understand the transport properties of graphene mesoscopic-systems.
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Submitted 17 July, 2013;
originally announced July 2013.
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Aharonov-Bohm effect and giant magnetoresistance in graphene nanoribbon rings
Authors:
Viet-Hung Nguyen,
Yann-Michel Niquet,
Philippe Dollfus
Abstract:
We report a numerical study on Aharonov-Bohm (AB) effect and giant magnetoresistance in rectangular rings made of graphene nanoribbons (GNRs). We show that in low energy regime where only the first subband of contact GNRs contributes to the transport, the transmission probability can be strongly modulated, i.e., almost fully suppressed, when tuning a perpendicular magnetic field. On this basis, st…
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We report a numerical study on Aharonov-Bohm (AB) effect and giant magnetoresistance in rectangular rings made of graphene nanoribbons (GNRs). We show that in low energy regime where only the first subband of contact GNRs contributes to the transport, the transmission probability can be strongly modulated, i.e., almost fully suppressed, when tuning a perpendicular magnetic field. On this basis, strong AB oscillations with giant negative magnetoresistance can be achieved at room temperature. The magnetoresistance reaches thousands % in perfect GNR rings and a few hundred % with edge disordered GNRs. The design rules to observe such strong effects are also discussed. Our study hence provides guidelines for further investigations of the AB interference and to obtain high magnetoresistance in graphene devices.
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Submitted 6 June, 2013; v1 submitted 20 March, 2013;
originally announced March 2013.
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Atomistic Boron-Doped Graphene Field Effect Transistors: A Route towards Unipolar Characteristics
Authors:
Paolo Marconcini,
Alessandro Cresti,
Francois Triozon,
Gianluca Fiori,
Blanca Biel,
Yann-Michel Niquet,
Massimo Macucci,
Stephan Roche
Abstract:
We report fully quantum simulations of realistic models of boron-doped graphene-based field effect transistors, including atomistic details based on DFT calculations. We show that the self-consistent solution of the three-dimensional (3D) Poisson and Schrödinger equations with a representation in terms of a tight-binding Hamiltonian manages to accurately reproduce the DFT results for an isolated b…
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We report fully quantum simulations of realistic models of boron-doped graphene-based field effect transistors, including atomistic details based on DFT calculations. We show that the self-consistent solution of the three-dimensional (3D) Poisson and Schrödinger equations with a representation in terms of a tight-binding Hamiltonian manages to accurately reproduce the DFT results for an isolated boron-doped graphene nanoribbon. Using a 3D Poisson/Schrödinger solver within the Non-Equilibrium Green's Functions (NEGF) formalism, self-consistent calculations of the gate-screened scattering potentials induced by the boron impurities have been performed, allowing the theoretical exploration of the tunability of transistor characteristics. The boron-doped graphene transistors are found to approach unipolar behavior as the boron concentration is increased, and by tuning the density of chemical dopants the electron-hole transport asymmetry can be finely adjusted. Correspondingly, the onset of a mobility gap in the device is observed. Although the computed asymmetries are not sufficient to warrant proper device operation, our results represent an initial step in the direction of improved transfer characteristics and, in particular, the developed simulation strategy is a powerful new tool for modeling doped graphene nanostructures.
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Submitted 28 February, 2013;
originally announced March 2013.
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Residual strain and piezoelectric effects in passivated GaAs/AlGaAs core-shell nanowires
Authors:
Moïra Hocevar,
Le Thuy Thanh Giang,
Rudeesun Songmuang,
Martien den Hertog,
Lucien Besombes,
Joël Bleuse,
Yann-Michel Niquet,
Nikos T. Pelekanos
Abstract:
We observe a systematic red shift of the band-edge of passivated GaAs/Al0.35Ga0.65As core-shell nanowires with increasing shell thickness up to 100 nm. The shift is detected both in emission and absorption experiments, reaching values up to 14 meV for the thickest shell nanowires. Part of this red shift is accounted for by the small tensile strain imposed to the GaAs core by the AlGaAs shell, in l…
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We observe a systematic red shift of the band-edge of passivated GaAs/Al0.35Ga0.65As core-shell nanowires with increasing shell thickness up to 100 nm. The shift is detected both in emission and absorption experiments, reaching values up to 14 meV for the thickest shell nanowires. Part of this red shift is accounted for by the small tensile strain imposed to the GaAs core by the AlGaAs shell, in line with theoretical calculations. An additional contribution to this red shift arises from axial piezoelectric fields which develop inside the nanowire core due to Al fluctuations in the shell.
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Submitted 13 February, 2013;
originally announced February 2013.
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Detection of a large valley-orbit splitting in silicon with two-donor spectroscopy
Authors:
Benoit Roche,
Eva Dupont-Ferrier,
Benoit Voisin,
Manuel Cobian,
Xavier Jehl,
Romain Wacquez,
Maud Vinet,
Yann-Michel Niquet,
Marc Sanquer
Abstract:
We measure a large valley-orbit splitting for shallow isolated phosphorus donors in a silicon gated nanowire. This splitting is close to the bulk value and well above previous reports in silicon nanostructures. It was determined using a double dopant transport spectroscopy which eliminates artifacts induced by the environment. Quantitative simulations taking into account the position of the donors…
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We measure a large valley-orbit splitting for shallow isolated phosphorus donors in a silicon gated nanowire. This splitting is close to the bulk value and well above previous reports in silicon nanostructures. It was determined using a double dopant transport spectroscopy which eliminates artifacts induced by the environment. Quantitative simulations taking into account the position of the donors with respect to the Si/SiO$_2$ interface and electric field in the wire show that the values found are consistent with the device geometry.
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Submitted 12 July, 2012;
originally announced July 2012.
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Transport properties of 2D graphene containing structural defects
Authors:
Aurelien Lherbier,
Simon M. -M. Dubois,
Xavier Declerck,
Yann-Michel Niquet,
Stephan Roche,
Jean-Christophe Charlier
Abstract:
We propose an extensive report on the simulation of electronic transport in 2D graphene in presence of structural defects. Amongst the large variety of such defects in sp$^2$ carbon-based materials, we focus on the Stone-Wales defect and on two divacancy-type reconstructed defects. First, based on ab initio calculations, a tight-binding model is derived to describe the electronic structure of thes…
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We propose an extensive report on the simulation of electronic transport in 2D graphene in presence of structural defects. Amongst the large variety of such defects in sp$^2$ carbon-based materials, we focus on the Stone-Wales defect and on two divacancy-type reconstructed defects. First, based on ab initio calculations, a tight-binding model is derived to describe the electronic structure of these defects. Then, semiclassical transport properties including the elastic mean free paths, mobilities and conductivities are computed using an order-N real-space Kubo-Greenwood method. A plateau of minimum conductivity ($σ^{min}_{sc}= 4e^2/πh$) is progressively observed as the density of defects increases. This saturation of the decay of conductivity to $σ^{min}_{sc}$ is associated with defect-dependent resonant energies. Finally, localization phenomena are captured beyond the semiclassical regime. An Anderson transition is predicted with localization lengths of the order of tens of nanometers for defect densities around 1%.
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Submitted 20 April, 2012;
originally announced April 2012.
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Surface effects in a semiconductor photonic nanowire and spectral stability of an embedded single quantum dot
Authors:
Inah Yeo,
Nitin S. Malik,
Mathieu Munsch,
Emmanuel Dupuy,
Joël Bleuse,
Yann-Michel Niquet,
Jean-Michel Gérard,
Julien Claudon,
Édouard Wagner,
Signe Seidelin,
Alexia Auffèves,
Jean-Philippe Poizat,
Gilles Nogues
Abstract:
We evidence the influence of surface effects for InAs quantum dots embedded into GaAs photonic nanowires used as efficient single photon sources. We observe a continuous temporal drift of the emission energy that is an obstacle to resonant quantum optics experiments at the single photon level. We attribute the drift to the sticking of oxygen molecules onto the wire, which modifies the surface char…
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We evidence the influence of surface effects for InAs quantum dots embedded into GaAs photonic nanowires used as efficient single photon sources. We observe a continuous temporal drift of the emission energy that is an obstacle to resonant quantum optics experiments at the single photon level. We attribute the drift to the sticking of oxygen molecules onto the wire, which modifies the surface charge and hence the electric field seen by the quantum dot. The influence of temperature and excitation laser power on this phenomenon is studied. Most importantly, we demonstrate a proper treatment of the nanowire surface to suppress the drift.
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Submitted 16 December, 2011;
originally announced December 2011.
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Assessment of the notions of band offsets, wells and barriers at nanoscale semiconductor heterojunctions
Authors:
Yann-Michel Niquet,
Christophe Delerue
Abstract:
Epitaxially-grown semiconductor heterostructures give the possibility to tailor the potential landscape for the carriers in a very controlled way. In planar lattice-matched heterostructures, the potential has indeed a very simple and easily predictable behavior: it is constant everywhere except at the interfaces where there is a step (discontinuity) which only depends on the composition of the sem…
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Epitaxially-grown semiconductor heterostructures give the possibility to tailor the potential landscape for the carriers in a very controlled way. In planar lattice-matched heterostructures, the potential has indeed a very simple and easily predictable behavior: it is constant everywhere except at the interfaces where there is a step (discontinuity) which only depends on the composition of the semiconductors in contact. In this paper, we show that this universally accepted picture can be invalid in nanoscale heterostructures (e.g., quantum dots, rods, nanowires) which can be presently fabricated in a large variety of forms. Self-consistent tight-binding calculations applied to systems containing up to 75 000 atoms indeed demonstrate that the potential may have a more complex behavior in axial hetero-nanostructures: The band edges can show significant variations far from the interfaces if the nanostructures are not capped with a homogeneous shell. These results suggest new strategies to engineer the electronic properties of nanoscale objects, e.g. for sensors and photovoltaics.
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Submitted 25 July, 2011; v1 submitted 6 June, 2011;
originally announced June 2011.
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Two-dimensional Graphene with Structural Defects: Elastic Mean Free Path, Minimum Conductivity and Anderson Transition
Authors:
Aurélien Lherbier,
Simon M. -M. Dubois,
Xavier Declerck,
Stephan Roche,
Yann-Michel Niquet,
Jean-Christophe Charlier
Abstract:
Quantum transport properties of disordered graphene with structural defects (Stone-Wales and divacancies) are investigated using a realistic π-π* tight-binding model elaborated from ab initio calculations. Mean free paths and semiclassical conductivities are then computed as a function of the nature and density of defects (using an order-N real-space Kubo-Greenwood method). By increasing of the de…
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Quantum transport properties of disordered graphene with structural defects (Stone-Wales and divacancies) are investigated using a realistic π-π* tight-binding model elaborated from ab initio calculations. Mean free paths and semiclassical conductivities are then computed as a function of the nature and density of defects (using an order-N real-space Kubo-Greenwood method). By increasing of the defect density, the decay of the semiclassical conductivities is predicted to saturate to a minimum value of 4e^2/πh over a large range (plateau) of carrier density (> 0.5 10^{14}cm^{-2}). Additionally, strong contributions of quantum interferences suggest that the Anderson localization regime could be experimentally measurable for a defect density as low as 1%.
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Submitted 22 December, 2010;
originally announced December 2010.
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Charged impurity scattering and mobility in gated silicon nanowires
Authors:
Martin P. Persson,
Hector Mera,
Yann-Michel Niquet,
Christophe Delerue,
Mamadou Diarra
Abstract:
We study the effects of charged impurity scattering on the electronic transport properties of <110>-oriented Si nanowires in a gate-all-around geometry, where the impurity potential is screened by the gate, gate oxide and conduction band electrons. The electronic structure of the doped nanowires is calculated with a tight-binding method and the transport properties with a Landauer-Buttiker Green f…
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We study the effects of charged impurity scattering on the electronic transport properties of <110>-oriented Si nanowires in a gate-all-around geometry, where the impurity potential is screened by the gate, gate oxide and conduction band electrons. The electronic structure of the doped nanowires is calculated with a tight-binding method and the transport properties with a Landauer-Buttiker Green functions approach and the linearized Boltzmann transport equation (LBTE) in the first Born approximation. Based on our numerical results we argue that: (1) There are large differences between Phosphorous (P) and Boron (B) doped systems, acceptors behaving as tunnel barriers for the electrons, while donors give rise to Fano resonances in the transmission. (2) As a consequence, the mobility is much larger in P- than in B-doped nanowires at low carrier density, but can be larger in B-doped nanowires at high carrier density. (3) The resistance of a single impurity is strongly dependent on its radial position in the nanowire, especially for acceptors. (4) As a result of subband structure and screening effects, the impurity-limited mobility can be larger in thin nanowires embedded in HfO2 than in bulk Si. Acceptors might, however, strongly hinder the flow of electrons in thin nanowires embedded in SiO2. (5) The perturbative LBTE largely fails to predict the correct mobilities in quantum-confined nanowires.
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Submitted 25 June, 2010;
originally announced June 2010.
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Stark effect in GaN/AlN nanowire heterostructures: Influence of strain relaxation and surface states
Authors:
D. Camacho,
Y. M. Niquet
Abstract:
We model the quantum confined Stark effect in AlN/GaN/AlN heterostructures grown on top of [0001]-oriented GaN nanowires. The pyro- and piezoelectric field are computed in a self-consistent approach, making no assumption about the pinning of the Fermi level, but including an explicit distribution of surface states which can act as a source or trap of carriers. We show that the pyro- and piezoelect…
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We model the quantum confined Stark effect in AlN/GaN/AlN heterostructures grown on top of [0001]-oriented GaN nanowires. The pyro- and piezoelectric field are computed in a self-consistent approach, making no assumption about the pinning of the Fermi level, but including an explicit distribution of surface states which can act as a source or trap of carriers. We show that the pyro- and piezoelectric field bends the conduction and valence bands of GaN and AlN and transfers charges from the top surface of the nanowire to an electron gas below the heterostructure. As a consequence, the Fermi level is likely pinned near the valence band of AlN at the top surface. The electron gas and surface charges screen the electric field, thereby reducing the Stark effect. The efficient strain relaxation further weakens the piezoelectric polarization. We compute the electronic properties of the heterostructures with a sp3d5s* tight-binding model, and compare the theoretical predictions with the available experimental data.
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Submitted 25 June, 2010; v1 submitted 20 January, 2010;
originally announced January 2010.
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Analysis of strain and stacking faults in single nanowires using Bragg coherent diffraction imaging
Authors:
V. Favre-Nicolin,
F. Mastropietro,
J. Eymery,
D. Camacho,
Y. M. Niquet,
B. M. Borg,
M. E. Messing,
L. -E. Wernersson,
R. E. Algra,
E. P. A. M. Bakkers,
T. H. Metzger,
R Harder,
I. K. Robinson
Abstract:
Coherent diffraction imaging (CDI) on Bragg reflections is a promising technique for the study of three-dimensional (3D) composition and strain fields in nanostructures, which can be recovered directly from the coherent diffraction data recorded on single objects. In this article we report results obtained for single homogeneous and heterogeneous nanowires with a diameter smaller than 100 nm, fo…
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Coherent diffraction imaging (CDI) on Bragg reflections is a promising technique for the study of three-dimensional (3D) composition and strain fields in nanostructures, which can be recovered directly from the coherent diffraction data recorded on single objects. In this article we report results obtained for single homogeneous and heterogeneous nanowires with a diameter smaller than 100 nm, for which we used CDI to retrieve information about deformation and faults existing in these wires. The article also discusses the influence of stacking faults, which can create artefacts during the reconstruction of the nanowire shape and deformation.
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Submitted 21 January, 2010; v1 submitted 28 October, 2009;
originally announced October 2009.
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Ab initio calculation of the binding energy of impurities in semiconductors: Application to Si nanowires
Authors:
Y. M. Niquet,
L. Genovese,
C. Delerue,
T. Deutsch
Abstract:
We discuss the binding energy E_b of impurities in semiconductors within density functional theory (DFT) and the GW approximation, focusing on donors in nanowires as an example. We show that DFT succeeds in the calculation of E_b from the Kohn-Sham (KS) hamiltonian of the ionized impurity, but fails in the calculation of E_b from the KS hamiltonian of the neutral impurity, as it misses most of the…
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We discuss the binding energy E_b of impurities in semiconductors within density functional theory (DFT) and the GW approximation, focusing on donors in nanowires as an example. We show that DFT succeeds in the calculation of E_b from the Kohn-Sham (KS) hamiltonian of the ionized impurity, but fails in the calculation of E_b from the KS hamiltonian of the neutral impurity, as it misses most of the interaction of the bound electron with the surface polarization charges of the donor. We trace this deficiency back to the lack of screened exchange in the present functionals.
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Submitted 20 April, 2010; v1 submitted 28 July, 2009;
originally announced July 2009.
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Model for the on-site matrix elements of the tight-binding hamiltonian of a strained crystal: Application to silicon, germanium and their alloys
Authors:
Y. M. Niquet,
D. Rideau,
C. Tavernier,
H. Jaouen,
X. Blase
Abstract:
We discuss a model for the on-site matrix elements of the sp3d5s* tight-binding hamiltonian of a strained diamond or zinc-blende crystal or nanostructure. This model features on-site, off-diagonal couplings between the s, p and d orbitals, and is able to reproduce the effects of arbitrary strains on the band energies and effective masses in the full Brillouin zone. It introduces only a few addit…
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We discuss a model for the on-site matrix elements of the sp3d5s* tight-binding hamiltonian of a strained diamond or zinc-blende crystal or nanostructure. This model features on-site, off-diagonal couplings between the s, p and d orbitals, and is able to reproduce the effects of arbitrary strains on the band energies and effective masses in the full Brillouin zone. It introduces only a few additional parameters and is free from any ambiguities that might arise from the definition of the macroscopic strains as a function of the atomic positions. We apply this model to silicon, germanium and their alloys as an illustration. In particular, we make a detailed comparison of tight-binding and ab initio data on strained Si, Ge and SiGe.
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Submitted 3 February, 2009;
originally announced February 2009.
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Quantum Transport Length Scales in Silicon-based Semiconducting Nanowires: Surface Roughness Effects
Authors:
Aurelien Lherbier,
Martin Persson,
Yann-Michel Niquet,
Francois Triozon,
Stephan Roche
Abstract:
We report on a theoretical study of quantum charge transport in atomistic models of silicon nanowires with surface roughness-based disorder. Depending on the nanowires features (length, roughness profile) various conduction regimes are explored numerically by using efficient real space order N computational approaches of both Kubo-Greenwood and Landauer-Buttiker transport frameworks. Quantitativ…
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We report on a theoretical study of quantum charge transport in atomistic models of silicon nanowires with surface roughness-based disorder. Depending on the nanowires features (length, roughness profile) various conduction regimes are explored numerically by using efficient real space order N computational approaches of both Kubo-Greenwood and Landauer-Buttiker transport frameworks. Quantitative estimations of the elastic mean free paths, charge mobilities and localization lengths are performed as a function of the correlation length of the surface roughness disorder. The obtained values for charge mobilities well compare with the experimental estimates of the most performant undoped nanowires. Further the limitations of the Thouless relationship between the mean free path and the localization length are outlined.
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Submitted 10 January, 2008;
originally announced January 2008.
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Transport Length Scales in Disordered Graphene-based Materials: Strong Localization Regimes and Dimensionality Effects
Authors:
Aurelien Lherbier,
Blanca Biel,
Yann-Michel Niquet,
Stephan Roche
Abstract:
We report on a numerical study of quantum transport in disordered two dimensional graphene and graphene nanoribbons. By using the Kubo and the Landauer approaches, transport length scales in the diffusive (mean free path, charge mobilities) and localized regimes (localization lengths) are computed, assuming a short range disorder (Anderson-type). In agreement with localization scaling theory, th…
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We report on a numerical study of quantum transport in disordered two dimensional graphene and graphene nanoribbons. By using the Kubo and the Landauer approaches, transport length scales in the diffusive (mean free path, charge mobilities) and localized regimes (localization lengths) are computed, assuming a short range disorder (Anderson-type). In agreement with localization scaling theory, the electronic systems are found to undergo a conventional Anderson localization in the zero temperature limit. Localization lengths in weakly disordered ribbons are found to differ by two orders of magnitude depending on their edge symmetry, but always remain several orders of magnitude smaller than those computed for 2D graphene for the same disorder strength. This pinpoints the role of transport dimensionality and edge effects.
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Submitted 10 January, 2008;
originally announced January 2008.
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Quantum Communication with Quantum Dot Spins
Authors:
Christoph Simon,
Yann-Michel Niquet,
Xavier Caillet,
Joel Eymery,
Jean-Philippe Poizat,
Jean-Michel Gerard
Abstract:
Single electron spins in quantum dots are attractive for quantum communication because of their expected long coherence times. We propose a method to create entanglement between two remote spins based on the coincident detection of two photons emitted by the dots. Local nodes of several qubits can be realized using the dipole-dipole interaction between trions in neighboring dots and spectral add…
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Single electron spins in quantum dots are attractive for quantum communication because of their expected long coherence times. We propose a method to create entanglement between two remote spins based on the coincident detection of two photons emitted by the dots. Local nodes of several qubits can be realized using the dipole-dipole interaction between trions in neighboring dots and spectral addressing, allowing the realization of quantum repeater protocols. We have performed a detailed feasibility study of our proposal based on tight-binding calculations of quantum dot properties.
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Submitted 24 November, 2006; v1 submitted 5 September, 2006;
originally announced September 2006.
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Describing static correlation in bond dissociation by Kohn-Sham density functional theory
Authors:
M. Fuchs,
Y. -M. Niquet,
X. Gonze,
K. Burke
Abstract:
We show that density functional theory within the RPA (random phase approximation for the exchange-correlation energy) provides a correct description of bond dissociation in H$_2$ in a spin-restricted Kohn-Sham formalism, i.e. without artificial symmetry breaking. We present accurate adiabatic connection curves both at equilibrium and beyond the Coulson-Fisher point. The strong curvature at larg…
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We show that density functional theory within the RPA (random phase approximation for the exchange-correlation energy) provides a correct description of bond dissociation in H$_2$ in a spin-restricted Kohn-Sham formalism, i.e. without artificial symmetry breaking. We present accurate adiabatic connection curves both at equilibrium and beyond the Coulson-Fisher point. The strong curvature at large bond length implies important static (left-right) correlation, justifying modern hybrid functional constructions but also demonstrating their limitations. Although exact at infinite and accurate around the equilibrium bond length, the RPA dissociation curve displays unphysical repulsion at larger but finite bond lengths. Going beyond the RPA by including the exact exchange kernel (RPA+X), we find a similar repulsion. We argue that this deficiency is due to the absence of double excitations in adiabatic linear response theory. Further analyzing the H$_2$ dissociation limit we show that the RPA+X is not size-consistent, in contrast to the RPA.
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Submitted 19 October, 2004;
originally announced October 2004.
