Showing 1–50 of 81 results for author: Niquet, Y

Hole spin qubits in unstrained Germanium layers

Authors: Lorenzo Mauro, Mauricio J. Rodriguez, Esteban A. Rodriguez-Mena, Yann-Michel Niquet

Abstract: Strained germanium heterostructures are one of the most promising material for hole spin qubits but suffer from the strong anisotropy of the gyromagnetic factors that hinders the optimization of the magnetic field orientation. The figures of merit (Rabi frequencies, lifetimes...) can indeed vary by an order of magnitude within a few degrees around the heterostructure plane. We propose to address t… ▽ More Strained germanium heterostructures are one of the most promising material for hole spin qubits but suffer from the strong anisotropy of the gyromagnetic factors that hinders the optimization of the magnetic field orientation. The figures of merit (Rabi frequencies, lifetimes...) can indeed vary by an order of magnitude within a few degrees around the heterostructure plane. We propose to address this issue by confining the holes at the interface of an unstrained, bulk Ge substrate or thick buffer. We model such structures and show that the gyromagnetic anisotropy is indeed considerably reduced. In addition, the Rabi frequencies and quality factors can be significantly improved with respect to strained heterostructures. This extends the operational range of the qubits and shall ease the scale-up to many-qubit systems. △ Less

Submitted 6 June, 2025; v1 submitted 5 June, 2025; originally announced June 2025.

Dressed basis sets for the modeling of exchange interactions in double quantum dots

Authors: Mauricio J. Rodríguez, Esteban A. Rodríguez-Mena, Ahmad Fouad Kalo, Yann-Michel Niquet

Abstract: We discuss the microscopic modeling of exchange interactions between double semiconductor quantum dots used as spin qubits. Starting from a reference full configuration interaction (CI) calculation for the two-particle wave functions, we build a reduced basis set of dressed states that can describe the ground-state singlets and triplets over the whole operational range with as few as one hundred b… ▽ More We discuss the microscopic modeling of exchange interactions between double semiconductor quantum dots used as spin qubits. Starting from a reference full configuration interaction (CI) calculation for the two-particle wave functions, we build a reduced basis set of dressed states that can describe the ground-state singlets and triplets over the whole operational range with as few as one hundred basis functions (as compared to a few thousands for the full CI). This enables fast explorations of the exchange interactions landscape as well as efficient time-dependent simulations. We apply this methodology to a double hole quantum dot in germanium, and discuss the physics of exchange interactions in this system. We show that the net exchange splitting results from a complex interplay between inter-dot tunneling, Coulomb exchange and correlations. We analyze, moreover, the effects of confinement, strains and Rashba interactions on the anisotropic exchange and singlet-triplet mixings at finite magnetic field. We finally illustrate the relevance of this methodology for time-dependent calculations on a singlet-triplet qubit. △ Less

Submitted 25 April, 2025; originally announced April 2025.

Comments: 14 pages, 13 figures

A two-dimensional 10-qubit array in germanium with robust and localised qubit control

Authors: Valentin John, Cécile X. Yu, Barnaby van Straaten, Esteban A. Rodríguez-Mena, Mauricio Rodríguez, Stefan Oosterhout, Lucas E. A. Stehouwer, Giordano Scappucci, Stefano Bosco, Maximilian Rimbach-Russ, Yann-Michel Niquet, Francesco Borsoi, Menno Veldhorst

Abstract: Quantum computers require the systematic operation of qubits with high fidelity. For holes in germanium, the spin-orbit interaction allows for \textit{in situ} electric fast and high-fidelity qubit gates. However, the interaction also causes a large qubit variability due to strong g-tensor anisotropy and dependence on the environment. Here, we leverage advances in material growth, device fabricati… ▽ More Quantum computers require the systematic operation of qubits with high fidelity. For holes in germanium, the spin-orbit interaction allows for \textit{in situ} electric fast and high-fidelity qubit gates. However, the interaction also causes a large qubit variability due to strong g-tensor anisotropy and dependence on the environment. Here, we leverage advances in material growth, device fabrication, and qubit control to realise a two-dimensional 10-spin qubit array, with qubits coupled up to four neighbours that can be controlled with high fidelity. By exploring the large parameter space of gate voltages and quantum dot occupancies, we demonstrate that plunger gate driving in the three-hole occupation enhances electric-dipole spin resonance (EDSR), creating a highly localised qubit drive. Our findings, confirmed with analytical and numerical models, highlight the crucial role of intradot Coulomb interaction and magnetic field direction. Furthermore, the ability to engineer qubits for robust control is a key asset for further scaling. △ Less

Submitted 17 February, 2025; v1 submitted 20 December, 2024; originally announced December 2024.

Comments: 10 pages, 3 figures

Optimal operation of hole spin qubits

Authors: Marion Bassi, Esteban-Alonso Rodrıguez-Mena, Boris Brun, Simon Zihlmann, Thanh Nguyen, Victor Champain, José Carlos Abadillo-Uriel, Benoit Bertrand, Heimanu Niebojewski, Romain Maurand, Yann-Michel Niquet, Xavier Jehl, Silvano De Franceschi, Vivien Schmitt

Abstract: Hole spins in silicon or germanium quantum dots have emerged as a compelling solid-state platform for scalable quantum processors. Besides relying on well-established manufacturing technologies, hole-spin qubits feature fast, electric-field-mediated control stemming from their intrinsically large spin-orbit coupling [1, 2]. This key feature is accompanied by an undesirable susceptibility to charge… ▽ More Hole spins in silicon or germanium quantum dots have emerged as a compelling solid-state platform for scalable quantum processors. Besides relying on well-established manufacturing technologies, hole-spin qubits feature fast, electric-field-mediated control stemming from their intrinsically large spin-orbit coupling [1, 2]. This key feature is accompanied by an undesirable susceptibility to charge noise, which usually limits qubit coherence. Here, by varying the magnetic-field orientation, we experimentally establish the existence of ``sweetlines'' in the polar-azimuthal manifold where the qubit is insensitive to charge noise. In agreement with recent predictions [3], we find that the observed sweetlines host the points of maximal driving efficiency, where we achieve fast Rabi oscillations with quality factors as high as 1200. Furthermore, we demonstrate that moderate adjustments in gate voltages can significantly shift the sweetlines. This tunability allows multiple qubits to be simultaneously made insensitive to electrical noise, paving the way for scalable qubit architectures that fully leverage all-electrical spin control. The conclusions of this experimental study, performed on a silicon metal-oxide-semiconductor device, are expected to apply to other implementations of hole spin qubits. △ Less

Submitted 17 December, 2024; originally announced December 2024.

Comments: 9 pages, 6 fgures

Artificial Intelligence-Assisted Workflow for Transmission Electron Microscopy: From Data Analysis Automation to Materials Knowledge Unveiling

Authors: Marc Botifoll, Ivan Pinto-Huguet, Enzo Rotunno, Thomas Galvani, Catalina Coll, Payam Habibzadeh Kavkani, Maria Chiara Spadaro, Yann-Michel Niquet, Martin Borstad Eriksen, Sara Marti-Sanchez, Georgios Katsaros, Giordano Scappucci, Peter Krogstrup, Giovanni Isella, Andreu Cabot, Gonzalo Merino, Pablo Ordejon, Stephan Roche, Vincenzo Grillo, Jordi Arbiol

Abstract: (Scanning) transmission electron microscopy ((S)TEM) has significantly advanced materials science but faces challenges in correlating precise atomic structure information with the functional properties of devices due to its time-intensive nature. To address this, we introduce an analytical workflow for the holistic characterization, modelling, and simulation of device heterostructures. This workfl… ▽ More (Scanning) transmission electron microscopy ((S)TEM) has significantly advanced materials science but faces challenges in correlating precise atomic structure information with the functional properties of devices due to its time-intensive nature. To address this, we introduce an analytical workflow for the holistic characterization, modelling, and simulation of device heterostructures. This workflow automates the experimental (S)TEM data analysis, providing an in-depth characterization of crystallographic information, 3D orientation, elemental composition, and strain distribution. It reduces a process that typically takes days for a trained human into an automatic routine solved in minutes. Utilizing a physics-guided artificial intelligence model, it generates representative descriptions of materials and samples. The workflow culminates in creating digital twins, 3D finite element and atomic models of millions of atoms, enabling simulations that provide crucial insights into device behaviour in practical applications. Demonstrated with SiGe planar heterostructures for scalable spin qubits, the workflow links digital twins to theoretical properties, revealing how atomic structure impacts materials and functional properties such as spatially-resolved phononic or electronic characteristics, or (inverse) spin orbit lengths. The versatility of our workflow is demonstrated through its application to a wide array of materials systems, device configurations, and sample morphologies. △ Less

Submitted 3 May, 2025; v1 submitted 1 November, 2024; originally announced November 2024.

Parametric longitudinal coupling of a semiconductor charge qubit and a RF resonator

Authors: Victor Champain, Simon Zihlmann, Alessandro Chessari, Benoit Bertrand, Heimanu Niebojewski, Etienne Dumur, Xavier Jehl, Vivien Schmitt, Boris Brun, Clemens Winkelmann, Yann-Michel Niquet, Michele Filippone, Silvano De Franceschi, Romain Maurand

Abstract: In this study, we provide a full experimental characterization of the parametric longitudinal coupling between a CMOS charge qubit and an off-chip RF resonator. Following Corrigan et al, Phys. Rev. Applied 20, 064005 (2023), we activate parametric longitudinal coupling by driving the charge qubit at the resonator frequency. Managing the crosstalk between the drive applied to the qubit and the reso… ▽ More In this study, we provide a full experimental characterization of the parametric longitudinal coupling between a CMOS charge qubit and an off-chip RF resonator. Following Corrigan et al, Phys. Rev. Applied 20, 064005 (2023), we activate parametric longitudinal coupling by driving the charge qubit at the resonator frequency. Managing the crosstalk between the drive applied to the qubit and the resonator allows for the systematic study of the dependence of the longitudinal and dispersive charge-photon couplings on the qubit-resonator detuning and the applied drive. Our experimental estimations of the charge-photon couplings are perfectly reproduced by theoretical simple formulas, without relying on any fitting parameter. We go further by showing a parametric displacement of the resonator's steady state, conditional on the qubit state, and the insensitivity of the longitudinal coupling constant on the photon population of the resonator. Our results open to the exploration of the photon-mediated longitudinal readout and coupling of multiple and distant spins, with long coherent times, in hybrid CMOS cQED architectures. △ Less

Submitted 26 October, 2024; originally announced October 2024.

Comments: 11 pages, 12 figures

Strain engineering in Ge/GeSi spin qubits heterostructures

Authors: Lorenzo Mauro, Esteban A. Rodríguez-Mena, Biel Martinez, Yann-Michel Niquet

Abstract: The heavy-holes in Ge/GeSi heterostructures show highly anisotropic gyromagnetic response with in-plane $g$-factors $g_{x,y}^*\lesssim 0.3$ and out-of-plane $g$-factor $g_z^*\gtrsim 10$. As a consequence, Rabi hot spots and dephasing sweet lines are extremely sharp and call for a careful alignment of the magnetic field in Ge spin qubit devices. We investigate how the $g$-factors can be engineered… ▽ More The heavy-holes in Ge/GeSi heterostructures show highly anisotropic gyromagnetic response with in-plane $g$-factors $g_{x,y}^*\lesssim 0.3$ and out-of-plane $g$-factor $g_z^*\gtrsim 10$. As a consequence, Rabi hot spots and dephasing sweet lines are extremely sharp and call for a careful alignment of the magnetic field in Ge spin qubit devices. We investigate how the $g$-factors can be engineered by strains. We show that uniaxial strains can raise in-plane $g$-factors above unity while leaving $g_z^*$ essentially constant. We discuss how the etching of an elongated mesa in a strained buffer can actually induce uniaxial (but inhomogeneous) strains in the heterostructure. This broadens the operational magnetic field range and enables spin manipulation by shuttling holes between neighboring dots with different $g$-factors. △ Less

Submitted 25 February, 2025; v1 submitted 29 July, 2024; originally announced July 2024.

Comments: 13 pages, 16 figures

Unifying Floquet theory of longitudinal and dispersive readout

Authors: Alessandro Chessari, Esteban A. Rodríguez-Mena, José Carlos Abadillo-Uriel, Victor Champain, Simon Zihlmann, Romain Maurand, Yann-Michel Niquet, Michele Filippone

Abstract: We devise a Floquet theory of longitudinal and dispersive readout in circuit QED. By studying qubits coupled to cavity photons and driven at the resonance frequency of the cavity $ω_{\rm r}$, we establish a universal connection between the qubit AC Stark shift and the longitudinal and dispersive coupling to photons. We find that the longitudinal coupling $g_\parallel$ is controlled by the slope of… ▽ More We devise a Floquet theory of longitudinal and dispersive readout in circuit QED. By studying qubits coupled to cavity photons and driven at the resonance frequency of the cavity $ω_{\rm r}$, we establish a universal connection between the qubit AC Stark shift and the longitudinal and dispersive coupling to photons. We find that the longitudinal coupling $g_\parallel$ is controlled by the slope of the AC Stark shift as function of the driving strength $A_{\rm q}$, while the dispersive shift $χ$ depends on its curvature. The two quantities become proportional to each other in the weak drive limit ($A_{\rm q}\rightarrow 0$). Our approach unifies the adiabatic limit ($ω_{\rm r}\rightarrow 0$) -- where $g_\parallel$ is generated by the static spectrum curvature (or quantum capacitance) -- with the diabatic one, where the static spectrum plays no role. We derive analytical results supported by exact numerical simulations. We apply them to superconducting and spin-hybrid cQED systems, showcasing the flexibility of faster-than-dispersive longitudinal readout. △ Less

Submitted 24 January, 2025; v1 submitted 3 July, 2024; originally announced July 2024.

Comments: 5 pages + supplementary material (14 pages)

Journal ref: Phys. Rev. Lett. 134, 037003 (2025)

Coherence limit due to hyperfine interaction with nuclei in the barrier material of Si spin qubits

Authors: Lukas Cvitkovich, Peter Stano, Christoph Wilhelmer, Dominic Waldhör, Daniel Loss, Yann-Michel Niquet, Tibor Grasser

Abstract: On the quest to understand and reduce environmental noise in Si spin qubits, hyperfine interactions between electron and nuclear spins impose a major challenge. Silicon is a promising host material because one can enhance the spin coherence time by removing spinful $^{29}$Si isotopes. As more experiments rely on isotopic purification of Si, the role of other spinful atoms in the device should be c… ▽ More On the quest to understand and reduce environmental noise in Si spin qubits, hyperfine interactions between electron and nuclear spins impose a major challenge. Silicon is a promising host material because one can enhance the spin coherence time by removing spinful $^{29}$Si isotopes. As more experiments rely on isotopic purification of Si, the role of other spinful atoms in the device should be clarified. This is not a straightforward task, as the hyperfine interactions with atoms in the barrier layers are poorly understood. We utilize density functional theory to determine the hyperfine tensors of both Si and Ge in a crystalline epitaxial Si/SiGe quantum well as well as Si and O atoms in an amorphous Si/SiO$_2$ (MOS) interface structure. Based on these results, we estimate the dephasing time $T_2^*$ due to magnetic noise from the spin bath and show that the coherence is limited by interactions with non-Si barrier atoms to a few \textmu s in Si/SiGe (for non-purified Ge) and about 100\,\textmu s in Si-MOS. Expressing these numbers alternatively, in Si/SiGe the interactions with Ge dominate below 1000\,ppm of $^{29}$Si content, and, due to low natural concentration of the spinful oxygen isotopes, the interactions with oxygen in Si-MOS become significant only below 1\,ppm of $^{29}$Si content. △ Less

Submitted 17 May, 2024; originally announced May 2024.

Comments: 15 pages, 8 figures

Mitigating variability in epitaxial-heterostructure-based spin-qubit devices by optimizing gate layout

Authors: Biel Martinez, Silvano de Franceschi, Yann-Michel Niquet

Abstract: The scalability of spin qubit devices is conditioned by qubit-to-qubit variability. Disorder in the host materials indeed affects the wave functions of the confined carriers, which leads to variations in their charge and spin properties. Charge disorder in the amorphous oxides is particularly detrimental owing to its long-range influence. Here we analyze the effects of charge traps at the semicond… ▽ More The scalability of spin qubit devices is conditioned by qubit-to-qubit variability. Disorder in the host materials indeed affects the wave functions of the confined carriers, which leads to variations in their charge and spin properties. Charge disorder in the amorphous oxides is particularly detrimental owing to its long-range influence. Here we analyze the effects of charge traps at the semiconductor/oxide interface, which are generally believed to play a dominant role in variability. We consider multiple random distributions of these interface traps and numerically calculate their impact on the chemical potentials, detuning and tunnel coupling of two adjacent quantum dots in SiGe heterostructure. Our results highlight the beneficial screening effect of the metal gates. The surface of the heterostructure shall, therefore, be covered as much as possible by the gates in order to limit variability. We propose an alternative layout with tip-shaped gates that maximizes the coverage of the semiconductor/oxide interface and outperforms the usual planar layout in some regimes. This highlights the importance of design in the management of device-to-device variability. △ Less

Submitted 6 August, 2024; v1 submitted 29 February, 2024; originally announced February 2024.

Geometry of the dephasing sweet spots of spin-orbit qubits

Authors: Lorenzo Mauro, Esteban A. Rodríguez-Mena, Marion Bassi, Vivien Schmitt, Yann-Michel Niquet

Abstract: The dephasing time of spin-orbit qubits is limited by the coupling with electrical and charge noise. However, there may exist "dephasing sweet spots" where the qubit decouples (to first order) from the noise so that the dephasing time reaches a maximum. Here we discuss the nature of the dephasing sweet spots of a spin-orbit qubit electrically coupled to some fluctuator. We characterize the Zeeman… ▽ More The dephasing time of spin-orbit qubits is limited by the coupling with electrical and charge noise. However, there may exist "dephasing sweet spots" where the qubit decouples (to first order) from the noise so that the dephasing time reaches a maximum. Here we discuss the nature of the dephasing sweet spots of a spin-orbit qubit electrically coupled to some fluctuator. We characterize the Zeeman energy $E_\mathrm{Z}$ of this qubit by the tensor $G$ such that $E_\mathrm{Z}=μ_B\sqrt{\vec{B}^\mathrm{T}G\vec{B}}$ (with $μ_B$ the Bohr magneton and $\vec{B}$ the magnetic field), and its response to the fluctuator by the derivative $G^\prime$ of $G$ with respect to the fluctuating field. The geometrical nature of the sweet spots on the unit sphere describing the magnetic field orientation depends on the sign of the eigenvalues of $G^\prime$. We show that sweet spots usually draw lines on this sphere. We then discuss how to characterize the electrical susceptibility of a spin-orbit qubit with test modulations on the gates. We apply these considerations to a Ge/GeSi spin qubit heterostructure, and discuss the prospects for the engineering of sweet spots. △ Less

Submitted 4 April, 2024; v1 submitted 15 December, 2023; originally announced December 2023.

Comments: 12 pages, 5 figures and supplemental material

Journal ref: Phys. Rev. B 109, 155406 (2024)

Linear-in-momentum spin orbit interactions in planar Ge/GeSi heterostructures and spin qubits

Authors: Esteban A. Rodríguez-Mena, José Carlos Abadillo-Uriel, Gaëtan Veste, Biel Martinez, Jing Li, Benoît Sklénard, Yann-Michel Niquet

Abstract: We investigate the existence of linear-in-momentum spin-orbit interactions in the valence band of Ge/GeSi heterostructures using an atomistic tight-binding method. We show that symmetry breaking at the Ge/GeSi interfaces gives rise to a linear Dresselhaus-type interaction for heavy-holes. This interaction results from the heavy-hole/light-hole mixings induced by the interfaces and can be captured… ▽ More We investigate the existence of linear-in-momentum spin-orbit interactions in the valence band of Ge/GeSi heterostructures using an atomistic tight-binding method. We show that symmetry breaking at the Ge/GeSi interfaces gives rise to a linear Dresselhaus-type interaction for heavy-holes. This interaction results from the heavy-hole/light-hole mixings induced by the interfaces and can be captured by a suitable correction to the minimal Luttinger-Kohn, four bands $\vec{k}\cdot\vec{p}$ Hamiltonian. It is dependent on the steepness of the Ge/GeSi interfaces, and is suppressed if interdiffusion is strong enough. Besides the Dresselhaus interaction, the Ge/GeSi interfaces also make a contribution to the in-plane gyromagnetic $g$-factors of the holes. The tight-binding calculations also highlight the existence of a small linear Rashba interaction resulting from the couplings between the heavy-hole/light-hole manifold and the conduction band enabled by the low structural symmetry of Ge/GeSi heterostructures. These interactions can be leveraged to drive the hole spin. The linear Dresselhaus interaction may, in particular, dominate the physics of the devices for out-of-plane magnetic fields. When the magnetic field lies in-plane, it is, however, usually far less efficient than the $g$-tensor modulation mechanisms arising from the motion of the dot in non-separable, inhomogeneous electric fields and strains. △ Less

Submitted 15 December, 2023; v1 submitted 19 July, 2023; originally announced July 2023.

Comments: 19 pages, 16 figs

Journal ref: Phys. Rev. B 108, 205416 (2023)

A new FDSOI spin qubit platform with 40nm effective control pitch

Authors: T. Bédécarrats, B. Cardoso Paz, B. Martinez Diaz, H. Niebojewski, B. Bertrand1, N. Rambal, C. Comboroure, A. Sarrazin, F. Boulard, E. Guyez, J. -M. Hartmann, Y. Morand, A. Magalhaes-Lucas, E. Nowak, E. Catapano, M. Cassé, M. Urdampilleta, Y. -M. Niquet, F. Gaillard, S. De Franceschi, T. Meunier, M. Vinet

Abstract: Operating Si quantum dot (QD) arrays requires homogeneous and ultra-dense structures with aggressive gate pitch. Such a density is necessary to separately control the QDs chemical potential (i.e. charge occupation of each QD) from the exchange interaction (i.e. tunnel barriers between each QD). We present here a novel Si quantum device integration that halves the effective gate pitch and provides… ▽ More Operating Si quantum dot (QD) arrays requires homogeneous and ultra-dense structures with aggressive gate pitch. Such a density is necessary to separately control the QDs chemical potential (i.e. charge occupation of each QD) from the exchange interaction (i.e. tunnel barriers between each QD). We present here a novel Si quantum device integration that halves the effective gate pitch and provides full controllability in 1D FDSOI QD arrays. The major advantages of this architecture are explored through numerical simulations. Functionality of the fabricated structure is validated via 300K statistical electrical characterization, while tunnel-coupling control is demonstrated at cryogenic temperature. △ Less

Submitted 7 April, 2023; originally announced April 2023.

Journal ref: 2021 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2021, pp. 1-4

RF simulation platform of qubit control using FDSOI technology for quantum computing

Authors: H. Jacquinot, R. Maurand, G. Troncoso Fernandez Bada, B. Bertrand, M. Cassé, Y. M. Niquet, S. de Franceschi, T. Meunier, M. Vinet

Abstract: In this paper, we report on simulations of an Electron Spin Resonance (ESR) RF control line for semiconductor electron spin qubits. The simulation includes both the ESR line characteristics (geometry and configuration, stack and material properties) and the electromagnetic (EM) environment at the vicinity of the qubits such as gates and interconnect network. With the accurate assessment of the mag… ▽ More In this paper, we report on simulations of an Electron Spin Resonance (ESR) RF control line for semiconductor electron spin qubits. The simulation includes both the ESR line characteristics (geometry and configuration, stack and material properties) and the electromagnetic (EM) environment at the vicinity of the qubits such as gates and interconnect network. With the accurate assessment of the magnetic and electric field distribution, we found that the EM environment of the qubits contributes significantly to the ESR line efficiency for spin control characterized by the magnetic over electric field ratio generated at the qubit location. △ Less

Submitted 7 April, 2023; originally announced April 2023.

Comments: 11 pages, 8 figures, Solid State Electronics (2022)

Electrical manipulation of a single electron spin in CMOS with micromagnet and spin-valley coupling

Authors: Bernhard Klemt, Victor El-Homsy, Martin Nurizzo, Pierre Hamonic, Biel Martinez, Bruna Cardoso Paz, Cameron spence, Matthieu Dartiailh, Baptiste Jadot, Emmanuel Chanrion, Vivien Thiney, Renan Lethiecq, Benoit Bertrand, Heimanu Niebojewski, Christopher Bäuerle, Maud Vinet, Yann-Michel Niquet, Tristan Meunier, Matias Urdampilleta

Abstract: For semiconductor spin qubits, complementary-metal-oxide-semiconductor (CMOS) technology is the ideal candidate for reliable and scalable fabrication. Making the direct leap from academic fabrication to qubits fabricated fully by industrial CMOS standards is difficult without intermediate solutions. With a flexible back-end-of-line (BEOL) new functionalities such as micromagnets or superconducting… ▽ More For semiconductor spin qubits, complementary-metal-oxide-semiconductor (CMOS) technology is the ideal candidate for reliable and scalable fabrication. Making the direct leap from academic fabrication to qubits fabricated fully by industrial CMOS standards is difficult without intermediate solutions. With a flexible back-end-of-line (BEOL) new functionalities such as micromagnets or superconducting circuits can be added in a post-CMOS process to study the physics of these devices or achieve proof of concepts. Once the process is established it can be incorporated in the foundry-compatible process flow. Here, we study a single electron spin qubit in a CMOS device with a micromagnet integrated in the flexible BEOL. We exploit the synthetic spin orbit coupling (SOC) to control the qubit via electric field and we investigate the spin-valley physics in the presence of SOC where we show an enhancement of the Rabi frequency at the spin-valley hotspot. Finally, we probe the high frequency noise in the system using dynamical decoupling pulse sequences and demonstrate that charge noise dominates the qubit decoherence in this range. △ Less

Submitted 8 March, 2023; originally announced March 2023.

Comments: 11 pages, 10 figures

Hole spin driving by strain-induced spin-orbit interactions

Authors: José Carlos Abadillo-Uriel, Esteban A. Rodríguez-Mena, Biel Martinez, Yann-Michel Niquet

Abstract: Hole spins in semiconductor quantum dots can be efficiently manipulated with radio-frequency electric fields owing to the strong spin-orbit interactions in the valence bands. Here we show that the motion of the dot in inhomogeneous strain fields gives rise to linear Rashba spin-orbit interactions (with spatially dependent spin-orbit lengths) and g-factor modulations that allow for fast Rabi oscill… ▽ More Hole spins in semiconductor quantum dots can be efficiently manipulated with radio-frequency electric fields owing to the strong spin-orbit interactions in the valence bands. Here we show that the motion of the dot in inhomogeneous strain fields gives rise to linear Rashba spin-orbit interactions (with spatially dependent spin-orbit lengths) and g-factor modulations that allow for fast Rabi oscillations. Such inhomogeneous strains may build up spontaneously due to process and cool down stress. We discuss spin qubits in Ge/GeSi heterostructures as an illustration. We highlight that Rabi frequencies can be enhanced by one order of magnitude by shear strain gradients as small as $3\times 10^{-6}$ nm$^{-1}$ within the dots. This underlines that spin in solids can be very sensitive to strains and opens the way for strain engineering in hole spin devices for quantum information and spintronics. △ Less

Submitted 1 September, 2023; v1 submitted 7 December, 2022; originally announced December 2022.

Comments: 19 pages, 3 figures

Journal ref: Physical Review Letters 131, 097002 (2023)

Modelling of spin decoherence in a Si hole qubit perturbed by a single charge fluctuator

Authors: Baker Shalak, Christophe Delerue, Yann-Michel Niquet

Abstract: Spin qubits in semiconductor quantum dots are one of the promizing devices to realize a quantum processor. A better knowledge of the noise sources affecting the coherence of such a qubit is therefore of prime importance. In this work, we study the effect of telegraphic noise induced by the fluctuation of a single electric charge. We simulate as realistically as possible a hole spin qubit in a quan… ▽ More Spin qubits in semiconductor quantum dots are one of the promizing devices to realize a quantum processor. A better knowledge of the noise sources affecting the coherence of such a qubit is therefore of prime importance. In this work, we study the effect of telegraphic noise induced by the fluctuation of a single electric charge. We simulate as realistically as possible a hole spin qubit in a quantum dot defined electrostatically by a set of gates along a silicon nanowire channel. Calculations combining Poisson and time-dependent Schrödinger equations allow to simulate the relaxation and the dephasing of the hole spin as a function of time for a classical random telegraph signal. We show that dephasing time $T_2$ is well given by a two-level model in a wide range of frequency. Remarkably, in the most realistic configuration of a low frequency fluctuator, the system has a non-Gaussian behavior in which the phase coherence is lost as soon as the fluctuator has changed state. The Gaussian description becomes valid only beyond a threshold frequency $ω_{th}$, when the two-level system reacts to the statistical distribution of the fluctuator states. We show that the dephasing time $T_{2}(ω_{th})$ at this threshold frequency can be considerably increased by playing on the orientation of the magnetic field and the gate potentials, by running the qubit along "sweet" lines. However, $T_{2}(ω_{th})$ remains bounded due to dephasing induced by the non-diagonal terms of the stochastic perturbation Hamiltonian. Our simulations reveal that the spin relaxation cannot be described cleanly in the two-level model because the coupling to higher energy hole levels impacts very strongly the spin decoherence. This result suggests that multi-level simulations including the coupling to phonons should be necessary to describe the relaxation phenomenon in this type of qubit. △ Less

Submitted 31 March, 2023; v1 submitted 19 October, 2022; originally announced October 2022.

Hole spin manipulation in inhomogeneous and non-separable electric fields

Authors: Biel Martinez, José Carlos Abadillo-Uriel, Esteban A. Rodríguez-Mena, Yann-Michel Niquet

Abstract: The usual models for electrical spin manipulation in semiconductor quantum dots assume that the confinement potential is separable in the three spatial dimensions and that the AC drive field is homogeneous. However, the electric field induced by the gates in quantum dot devices is not fully separable and displays significant inhomogeneities. Here, we address the electrical manipulation of hole spi… ▽ More The usual models for electrical spin manipulation in semiconductor quantum dots assume that the confinement potential is separable in the three spatial dimensions and that the AC drive field is homogeneous. However, the electric field induced by the gates in quantum dot devices is not fully separable and displays significant inhomogeneities. Here, we address the electrical manipulation of hole spins in semiconductor heterostructures subject to inhomogeneous vertical electric fields and/or in-plane AC electric fields. We consider Ge quantum dots electrically confined in a Ge/GeSi quantum well as an illustration. We show that the lack of separability between the vertical and in-plane motions gives rise to an additional spin-orbit coupling mechanism (beyond the usual linear and cubic in momentum Rashba terms) that modulates the principal axes of the hole gyromagnetic g-matrix. This non-separability mechanism can be of the same order of magnitude as Rashba-type interactions, and enables spin manipulation when the magnetic field is applied in the plane of the heterostructure even if the dot is symmetric (disk-shaped). More generally, we show that Rabi oscillations in strongly patterned electric fields harness a variety of g-factor modulations. We discuss the implications for the design, modeling and understanding of hole spin qubit devices. △ Less

Submitted 28 December, 2022; v1 submitted 21 September, 2022; originally announced September 2022.

Journal ref: Physical Review B 106, 235426 (2022)

Probing charge noise in few electron CMOS quantum dots

Authors: Cameron Spence, Bruna Cardoso-Paz, Vincent Michal, Emmanuel Chanrion, David J. Niegemann, Baptiste Jadot, Pierre-André Mortemousque, Bernhard Klemt, Vivien Thiney, Benoit Bertrand, Louis Hutin, Christopher Bäuerle, Franck Balestro, Maud Vinet, Yann-Michel Niquet, Tristan Meunier, Matias Urdampilleta

Abstract: Charge noise is one of the main sources of environmental decoherence for spin qubits in silicon, presenting a major obstacle in the path towards highly scalable and reproducible qubit fabrication. Here we demonstrate in-depth characterization of the charge noise environment experienced by a quantum dot in a CMOS-fabricated silicon nanowire. We probe the charge noise for different quantum dot c… ▽ More Charge noise is one of the main sources of environmental decoherence for spin qubits in silicon, presenting a major obstacle in the path towards highly scalable and reproducible qubit fabrication. Here we demonstrate in-depth characterization of the charge noise environment experienced by a quantum dot in a CMOS-fabricated silicon nanowire. We probe the charge noise for different quantum dot configurations, finding that it is possible to tune the charge noise over two orders of magnitude, ranging from 1 ueV^2 to 100 ueV^2. In particular, we show that the top interface and the reservoirs are the main sources of charge noise and their effect can be mitigated by controlling the quantum dot extension. Additionally, we demonstrate a novel method for the measurement of the charge noise experienced by a quantum dot in the few electron regime. We measure a comparatively higher charge noise value of 40 ueV^2 at the first electron, and demonstrate that the charge noise is highly dependent on the electron occupancy of the quantum dot. △ Less

Submitted 5 September, 2022; originally announced September 2022.

Comments: 6 pages 5 figures, supplementary materials included

Strong coupling between a photon and a hole spin in silicon

Authors: Cécile X. Yu, Simon Zihlmann, José C. Abadillo-Uriel, Vincent P. Michal, Nils Rambal, Heimanu Niebojewski, Thomas Bedecarrats, Maud Vinet, Etienne Dumur, Michele Filippone, Benoit Bertrand, Silvano De Franceschi, Yann-Michel Niquet, Romain Maurand

Abstract: Spins in semiconductor quantum dots constitute a promising platform for scalable quantum information processing. Coupling them strongly to the photonic modes of superconducting microwave resonators would enable fast non-demolition readout and long-range, on-chip connectivity, well beyond nearest-neighbor quantum interactions. Here we demonstrate strong coupling between a microwave photon in a supe… ▽ More Spins in semiconductor quantum dots constitute a promising platform for scalable quantum information processing. Coupling them strongly to the photonic modes of superconducting microwave resonators would enable fast non-demolition readout and long-range, on-chip connectivity, well beyond nearest-neighbor quantum interactions. Here we demonstrate strong coupling between a microwave photon in a superconducting resonator and a hole spin in a silicon-based double quantum dot issued from a foundry-compatible MOS fabrication process. By leveraging the strong spin-orbit interaction intrinsically present in the valence band of silicon, we achieve a spin-photon coupling rate as high as 330~MHz largely exceeding the combined spin-photon decoherence rate. This result, together with the recently demonstrated long coherence of hole spins in silicon, opens a new realistic pathway to the development of circuit quantum electrodynamics with spins in semiconductor quantum dots. △ Less

Submitted 9 May, 2023; v1 submitted 28 June, 2022; originally announced June 2022.

Comments: 7 pages, 4 figures of main text, 19 pages, 12 figures of supplementary material

Journal ref: Nature Nanotechnology 18, 741-746 (2023)

Tunable hole spin-photon interaction based on g-matrix modulation

Authors: V. P. Michal, J. C. Abadillo-Uriel, S. Zihlmann, R. Maurand, Y. -M. Niquet, M. Filippone

Abstract: We consider a spin circuit-QED device where a superconducting microwave resonator is capacitively coupled to a single hole confined in a semiconductor quantum dot. Thanks to the strong spin-orbit coupling intrinsic to valence-band states, the gyromagnetic g-matrix of the hole can be modulated electrically. This modulation couples the photons in the resonator to the hole spin. We show that the appl… ▽ More We consider a spin circuit-QED device where a superconducting microwave resonator is capacitively coupled to a single hole confined in a semiconductor quantum dot. Thanks to the strong spin-orbit coupling intrinsic to valence-band states, the gyromagnetic g-matrix of the hole can be modulated electrically. This modulation couples the photons in the resonator to the hole spin. We show that the applied gate voltages and the magnetic-field orientation enable a versatile control of the spin-photon interaction, whose character can be switched from fully transverse to fully longitudinal. The longitudinal coupling is actually maximal when the transverse one vanishes and vice-versa. This "reciprocal sweetness" results from geometrical properties of the g-matrix and protects the spin against dephasing or relaxation. We estimate coupling rates reaching ~ 10 MHz in realistic settings and discuss potential circuit-QED applications harnessing either the transverse or the longitudinal spin-photon interaction. Furthermore, we demonstrate that the g-matrix curvature can be used to achieve parametric longitudinal coupling with enhanced coherence. △ Less

Submitted 31 January, 2023; v1 submitted 1 April, 2022; originally announced April 2022.

Journal ref: Phys. Rev. B 107, L041303 (2023)

Investigation of Lasing in Highly Strained Germanium at the Crossover to Direct Band Gap

Authors: Francesco Armand Pilon, Yann-Michel Niquet, Jeremie Chretien, Nicolas Pauc, Vincent Reboud, Vincent Calvo, Julie Widiez, Jean Michel Hartmann, Alexei Chelnokov, Jerome Faist, Hans Sigg

Abstract: Efficient and cost-effective Si-compatible lasers are a long standing wish of the optoelectronic industry. In principle, there are two options. For many applications, lasers based on III-V compounds provide compelling solutions, even if the integration is complex and therefore costly. However, where low costs and also high integration density are crucial, group-IV-based lasers - made of Ge and GeS… ▽ More Efficient and cost-effective Si-compatible lasers are a long standing wish of the optoelectronic industry. In principle, there are two options. For many applications, lasers based on III-V compounds provide compelling solutions, even if the integration is complex and therefore costly. However, where low costs and also high integration density are crucial, group-IV-based lasers - made of Ge and GeSn, for example - could be an alternative, provided their performance can be improved. Such progresses will come with better materials but also with the development of a profounder understanding of their optical properties. In this work, we demonstrate, using Ge microbridges with strain up to 6.6%, a powerful method for determining the population inversion gain and the material and optical losses of group IV lasers. This is made by deriving the values for the injection carrier densities and the cavity losses from the measurement of the change of the refractive index and the mode linewidth, respectively. We observe a laser threshold consistent with optical gain and material loss values obtained from a tight binding calculation. Lasing in Ge - at steady-state - is found to be limited to low temperatures in a narrow regime of tensile strain at the crossover to the direct band gap bandstructure. We explain this observation by parasitic intervalence band absorption that increases rapidly with higher injection densities and temperature. N-doping seems to reduce the material loss at low excitation but does not extend the lasing regime. We also discuss the impact of the optically inactive carriers in the L-valley on the linewidth of group IV lasers. △ Less

Submitted 17 June, 2022; v1 submitted 27 January, 2022; originally announced January 2022.

Comments: 29 pages, 70 references, 15 figures

Journal ref: Physical Review Research 4, 033050 (2022)

A single hole spin with enhanced coherence in natural silicon

Authors: N. Piot, B. Brun, V. Schmitt, S. Zihlmann, V. P. Michal, A. Apra, J. C. Abadillo-Uriel, X. Jehl, B. Bertrand, H. Niebojewski, L. Hutin, M. Vinet, M. Urdampilleta, T. Meunier, Y. -M. Niquet, R. Maurand, S. De Franceschi

Abstract: Semiconductor spin qubits based on spin-orbit states are responsive to electric field excitation allowing for practical, fast and potentially scalable qubit control. Spin-electric susceptibility, however, renders these qubits generally vulnerable to electrical noise, which limits their coherence time. Here we report on a spin-orbit qubit consisting of a single hole electrostatically confined in a… ▽ More Semiconductor spin qubits based on spin-orbit states are responsive to electric field excitation allowing for practical, fast and potentially scalable qubit control. Spin-electric susceptibility, however, renders these qubits generally vulnerable to electrical noise, which limits their coherence time. Here we report on a spin-orbit qubit consisting of a single hole electrostatically confined in a natural silicon metal-oxide-semiconductor device. By varying the magnetic field orientation, we reveal the existence of operation sweet spots where the impact of charge noise is minimized while preserving an efficient electric-dipole spin control. We correspondingly observe an extension of the Hahn-echo coherence time up to 88 $μ$s, exceeding by an order of magnitude the best reported values for hole-spin qubits, and approaching the state-of-the-art for electron spin qubits with synthetic spin-orbit coupling in isotopically-purified silicon. This finding largely enhances the prospects of silicon-based hole spin qubits for scalable quantum information processing. △ Less

Submitted 25 September, 2022; v1 submitted 21 January, 2022; originally announced January 2022.

Journal ref: Nature Nanotechnology 17, 1072-1077 (2022)

Bilinear magnetoresistance in HgTe topological insulator: opposite signs at opposite interfaces demonstrated by gate control

Authors: Yu Fu, Jing Li, Jules Papin, Paul Noel, Salvatore Teresi, Maxen Cosset-Cheneau, Cecile Grezes, Thomas Guillet, Candice Thomas, Yann-Michel Niquet, Philippe Ballet, Tristan Meunier, Jean-Philippe Attane, Albert Fert, Laurent Vila

Abstract: Spin-orbit effects appearing in topological insulators (TI) and at Rashba interfaces are currently revolutionizing how we can manipulate spins and have led to several newly discovered effects, from spin-charge interconversion and spin-orbit torques to novel magnetoresistance phenomena. In particular, a puzzling magnetoresistance has been evidenced, bilinear in electric and magnetic fields. Here, w… ▽ More Spin-orbit effects appearing in topological insulators (TI) and at Rashba interfaces are currently revolutionizing how we can manipulate spins and have led to several newly discovered effects, from spin-charge interconversion and spin-orbit torques to novel magnetoresistance phenomena. In particular, a puzzling magnetoresistance has been evidenced, bilinear in electric and magnetic fields. Here, we report the observation of bilinear magnetoresistance (BMR) in strained HgTe, a prototypical TI. We show that both the amplitude and sign of this BMR can be tuned by controlling, with an electric gate, the relative proportions of the opposite contributions of opposite surfaces. At magnetic fields of 1 T, the magnetoresistance is of the order of 1 \% and has a larger figure of merit than previously measured TIs. We propose a theoretical model giving a quantitative account of our experimental data. This phenomenon, unique to TI, offers novel opportunities to tune their electrical response for spintronics. △ Less

Submitted 14 February, 2023; v1 submitted 30 November, 2021; originally announced November 2021.

Comments: 6 pages 3 figures

Non-reciprocal Pauli Spin Blockade in a Silicon Double Quantum Dot

Authors: Theodor Lundberg, David J. Ibberson, Jing Li, Louis Hutin, José C. Abadillo-Uriel, Michele Filippone, Benoit Bertrand, Andreas Nunnenkamp, Chang-Min Lee, Nadia Stelmashenko, Jason W. A. Robinson, Maud Vinet, Lisa Ibberson, Yann-Michel Niquet, M. Fernando Gonzalez-Zalba

Abstract: Spin qubits in gate-defined silicon quantum dots are receiving increased attention thanks to their potential for large-scale quantum computing. Readout of such spin qubits is done most accurately and scalably via Pauli spin blockade (PSB), however various mechanisms may lift PSB and complicate readout. In this work, we present an experimental observation of a new, highly prevalent PSB-lifting mech… ▽ More Spin qubits in gate-defined silicon quantum dots are receiving increased attention thanks to their potential for large-scale quantum computing. Readout of such spin qubits is done most accurately and scalably via Pauli spin blockade (PSB), however various mechanisms may lift PSB and complicate readout. In this work, we present an experimental observation of a new, highly prevalent PSB-lifting mechanism in a silicon double quantum dot due to incoherent tunneling between different spin manifolds. Through dispersively-detected magnetospectroscopy of the double quantum dot in 16 charge configurations, we find the mechanism to be energy-level selective and non-reciprocal for neighbouring charge configurations. Additionally, using input-output theory we report a large coupling of different electron spin manifolds of 7.90 $μ$eV, the largest reported to date, indicating an enhanced spin-orbit coupling which may enable all-electrical qubit control. △ Less

Submitted 20 October, 2021; v1 submitted 19 October, 2021; originally announced October 2021.

Comments: 12 pages, 10 figures. Minor updates to notation

Journal ref: npj Quantum Information 10, 28 (2024)

Spin-valley coupling anisotropy and noise in CMOS quantum dots

Authors: Cameron Spence, Bruna Cardoso Paz, Bernhard Klemt, Emmanuel Chanrion, David J. Niegemann, Baptiste Jadot, Vivien Thiney, Benoit Bertrand, Heimanu Niebojewski, Pierre-André Mortemousque, Xavier Jehl, Romain Maurand, Silvano De Franceschi, Maud Vinet, Franck Balestro, Christopher Bäuerle, Yann-Michel Niquet, Tristan Meunier, Matias Urdampilleta

Abstract: One of the main advantages of silicon spin qubits over other solid-state qubits is their inherent scalability and compatibility with the 300 mm CMOS fabrication technology that is already widely used in the semiconductor industry, whilst maintaining high readout and gate fidelities. We demonstrate detection of a single electron spin using energy-selective readout in a CMOS-fabricated nanowire devi… ▽ More One of the main advantages of silicon spin qubits over other solid-state qubits is their inherent scalability and compatibility with the 300 mm CMOS fabrication technology that is already widely used in the semiconductor industry, whilst maintaining high readout and gate fidelities. We demonstrate detection of a single electron spin using energy-selective readout in a CMOS-fabricated nanowire device with an integrated charge detector. We measure a valley splitting of 0.3 meV and 0.16 meV in two similar devices. The anisotropy of the spin-valley mixing is measured and shown to follow the dependence expected from the symmetry of the local confinement, indicating low disorder in the region of the quantum dot. Finally the charge noise in the spin-valley coupling regime is investigated and found to induce fluctuations in the qubit energy in the range of $0.6GHz/\sqrt{Hz}$. △ Less

Submitted 28 September, 2021; originally announced September 2021.

Comments: 4 figures

Two-body Wigner molecularization in asymmetric quantum dot spin qubits

Authors: José C. Abadillo-Uriel, Biel Martinez, Michele Filippone, Yann-Michel Niquet

Abstract: Coulomb interactions strongly influence the spectrum and the wave functions of few electrons or holes confined in a quantum dot. In particular, when the confinement potential is not too strong, the Coulomb repulsion triggers the formation of a correlated state, the Wigner molecule, where the particles tend to split apart. We show that the anisotropy of the confinement potential strongly enhances t… ▽ More Coulomb interactions strongly influence the spectrum and the wave functions of few electrons or holes confined in a quantum dot. In particular, when the confinement potential is not too strong, the Coulomb repulsion triggers the formation of a correlated state, the Wigner molecule, where the particles tend to split apart. We show that the anisotropy of the confinement potential strongly enhances the molecularization process and affects the performances of quantum-dot systems used as spin qubits. Relying on analytical and numerical solutions of the two-particle problem -- both in a simplified single-band approximation and in realistic setups -- we highlight the exponential suppression of the singlet-triplet gap with increasing anisotropy. We compare the molecularization effects in different semiconductor materials and discuss how they specifically hamper Pauli spin blockade readout and reduce the exchange interactions in two-qubit gates. △ Less

Submitted 19 November, 2021; v1 submitted 23 July, 2021; originally announced July 2021.

Comments: 12 pages and 8 figures in the main text + 5 pages of appendices

Journal ref: Phys. Rev. B 104, 195305 (2021)

Variability of electron and hole spin qubits due to interface roughness and charge traps

Authors: Biel Martinez, Yann-Michel Niquet

Abstract: Semiconductor spin qubits may show significant device-to-device variability in the presence of spin-orbit coupling mechanisms. Interface roughness, charge traps, layout or process inhomogeneities indeed shape the real space wave functions, hence the spin properties. It is, therefore, important to understand how reproducible the qubits can be, in order to assess strategies to cope with variability,… ▽ More Semiconductor spin qubits may show significant device-to-device variability in the presence of spin-orbit coupling mechanisms. Interface roughness, charge traps, layout or process inhomogeneities indeed shape the real space wave functions, hence the spin properties. It is, therefore, important to understand how reproducible the qubits can be, in order to assess strategies to cope with variability, and to set constraints on the quality of materials and fabrication. Here we model the variability of single qubit properties (Larmor and Rabi frequencies) due to disorder at the Si/SiO$_2$ interface (roughness, charge traps) in metal-oxide-semiconductor devices. We consider both electron qubits (with synthetic spin-orbit coupling fields created by micro-magnets) and hole qubits (with intrinsic spin-orbit coupling). We show that charge traps are much more limiting than interface roughness, and can scatter Rabi frequencies over one order of magnitude. We discuss the implications for the design of spin qubits and for the choice of materials. △ Less

Submitted 22 October, 2021; v1 submitted 22 July, 2021; originally announced July 2021.

Comments: 23 pages

Journal ref: Physical Review Applied 17, 024022 (2022)

Spatially-resolved decoherence of donor spins in silicon strained by a metallic electrode

Authors: V. Ranjan, B. Albanese, E. Albertinale, E. Billaud, D. Flanigan, J. J. Pla, T. Schenkel, D. Vion, D. Esteve, E. Flurin, J. J. L. Morton, Y. M. Niquet, P. Bertet

Abstract: Electron spins are amongst the most coherent solid-state systems known, however, to be used in devices for quantum sensing and information processing applications, they must be typically placed near interfaces. Understanding and mitigating the impacts of such interfaces on the coherence and spectral properties of electron spins is critical to realize such applications, but is also challenging: inf… ▽ More Electron spins are amongst the most coherent solid-state systems known, however, to be used in devices for quantum sensing and information processing applications, they must be typically placed near interfaces. Understanding and mitigating the impacts of such interfaces on the coherence and spectral properties of electron spins is critical to realize such applications, but is also challenging: inferring such data from single-spin studies requires many measurements to obtain meaningful results, while ensemble measurements typically give averaged results that hide critical information. Here, we report a comprehensive study of the coherence of near-surface bismuth donor spins in 28-silicon at millikelvin temperatures. In particular, we use strain-induced frequency shifts caused by a metallic electrode to make spatial maps of spin coherence as a function of depth and position relative to the electrode. By measuring magnetic-field-insensitive clock transitions we separate magnetic noise caused by surface spins from charge noise. Our results include quantitative models of the strain-split spin resonance spectra and extraction of paramagnetic impurity concentrations at the silicon surface. The interplay of these decoherence mechanisms for such near-surface electron spins is critical for their application in quantum technologies, while the combination of the strain splitting and clock transition extends the coherence lifetimes by up to two orders of magnitude, reaching up to 300 ms at a mean depth of only 100nm. The technique we introduce here to spatially map coherence in near-surface ensembles is directly applicable to other spin systems of active interest, such as defects in diamond, silicon carbide, and rare earth ions in optical crystals. △ Less

Submitted 12 January, 2021; originally announced January 2021.

Comments: 16 pages, 11 figures

Journal ref: Phys. Rev. X 11, 031036 (2021)

Dispersively probed microwave spectroscopy of a silicon hole double quantum dot

Authors: Rami Ezzouch, Simon Zihlmann, Vincent P. Michal, Jing Li, Agostino Aprá, Benoit Bertrand, Louis Hutin, Maud Vinet, Matias Urdampilleta, Tristan Meunier, Xavier Jehl, Yann-Michel Niquet, Marc Sanquer, Silvano De Franceschi, Romain Maurand

Abstract: Owing to ever increasing gate fidelities and to a potential transferability to industrial CMOS technology, silicon spin qubits have become a compelling option in the strive for quantum computation. In a scalable architecture, each spin qubit will have to be finely tuned and its operating conditions accurately determined. In this prospect, spectroscopic tools compatible with a scalable device layou… ▽ More Owing to ever increasing gate fidelities and to a potential transferability to industrial CMOS technology, silicon spin qubits have become a compelling option in the strive for quantum computation. In a scalable architecture, each spin qubit will have to be finely tuned and its operating conditions accurately determined. In this prospect, spectroscopic tools compatible with a scalable device layout are of primary importance. Here we report a two-tone spectroscopy technique providing access to the spin-dependent energy-level spectrum of a hole double quantum dot defined in a split-gate silicon device. A first GHz-frequency tone drives electric-dipole spin resonance enabled by the valence-band spin-orbit coupling. A second lower-frequency tone (approximately 500 MHz) allows for dispersive readout via rf-gate reflectometry. We compare the measured dispersive response to the linear response calculated in an extended Jaynes-Cummings model and we obtain characteristic parameters such as g-factors and tunnel/spin-orbit couplings for both even and odd occupation. △ Less

Submitted 28 January, 2021; v1 submitted 31 December, 2020; originally announced December 2020.

Journal ref: Phys. Rev. Applied 16, 034031 (2021)

Gate reflectometry in dense quantum dot arrays

Authors: Fabio Ansaloni, Heorhii Bohuslavskyi, Federico Fedele, Torbjørn Rasmussen, Bertram Brovang, Fabrizio Berritta, Amber Heskes, Jing Li, Louis Hutin, Benjamin Venitucci, Benoit Bertrand, Maud Vinet, Yann-Michel Niquet, Anasua Chatterjee, Ferdinand Kuemmeth

Abstract: Silicon quantum devices are maturing from academic single- and two-qubit devices to industrially-fabricated dense quantum-dot (QD) arrays, increasing operational complexity and the need for better pulsed-gate and readout techniques. We perform gate-voltage pulsing and gate-based reflectometry measurements on a dense 2$\times$2 array of silicon quantum dots fabricated in a 300-mm-wafer foundry. Uti… ▽ More Silicon quantum devices are maturing from academic single- and two-qubit devices to industrially-fabricated dense quantum-dot (QD) arrays, increasing operational complexity and the need for better pulsed-gate and readout techniques. We perform gate-voltage pulsing and gate-based reflectometry measurements on a dense 2$\times$2 array of silicon quantum dots fabricated in a 300-mm-wafer foundry. Utilizing the strong capacitive couplings within the array, it is sufficient to monitor only one gate electrode via high-frequency reflectometry to establish single-electron occupation in each of the four dots and to detect single-electron movements with high bandwidth. A global top-gate electrode adjusts the overall tunneling times, while linear combinations of side-gate voltages yield detailed charge stability diagrams. To test for spin physics and Pauli spin blockade at finite magnetic fields, we implement symmetric gate-voltage pulses that directly reveal bidirectional interdot charge relaxation as a function of the detuning between two dots. Charge sensing within the array can be established without the involvement of adjacent electron reservoirs, important for scaling such split-gate devices towards longer 2$\times$N arrays. Our techniques may find use in the scaling of few-dot spin-qubit devices to large-scale quantum processors. △ Less

Submitted 5 June, 2023; v1 submitted 8 December, 2020; originally announced December 2020.

Comments: 13 pages including appendices and 9 figures

Report number: NBI QDEV 2023

Journal ref: New J. Phys. 25, 033023 (2023)

Longitudinal and transverse electric field manipulation of hole spin-orbit qubits in one-dimensional channels

Authors: Vincent P. Michal, Benjamin Venitucci, Yann-Michel Niquet

Abstract: Holes confined in semiconductor nanostructures realize qubits where the quantum mechanical spin is strongly mixed with the quantum orbital angular momentum. The remarkable spin-orbit coupling allows for fast all electrical manipulation of such qubits. We study an idealization of a CMOS device where the hole is strongly confined in one direction (thin film geometry), while it is allowed to move mor… ▽ More Holes confined in semiconductor nanostructures realize qubits where the quantum mechanical spin is strongly mixed with the quantum orbital angular momentum. The remarkable spin-orbit coupling allows for fast all electrical manipulation of such qubits. We study an idealization of a CMOS device where the hole is strongly confined in one direction (thin film geometry), while it is allowed to move more extensively along a one-dimensional channel. Static electric bias and $ac$ electrical driving are applied by metallic gates arranged along the channel. In quantum devices based on materials with a bulk inversion symmetry, such as silicon or germanium, there exists different possible spin-orbit coupling based mechanisms for qubit manipulation. One of them, the $g$-tensor magnetic resonance ($g$-TMR), relies on the dependence of the effective $g$-factors on the electrical confinement. In this configuration the hole is driven by an $ac$ field parallel to the static electric field and perpendicular to the channel (transverse driving). Another mechanism, which we refer to here as iso-Zeeman electric dipole spin resonance (IZ-EDSR), is due to the Rashba spin-orbit coupling that leads to an effective time-dependent magnetic field experienced by the pseudo-spin oscillating along the quantum channel (longitudinal driving). We compare these two modes of operation and we describe the conditions where the magnitudes of the Rabi frequencies are the largest. Different regimes can be attained by electrical tuning where the coupling to the $ac$ electric field is made either weak or strong... △ Less

Submitted 21 January, 2021; v1 submitted 15 October, 2020; originally announced October 2020.

Comments: Minor modifications made before publication

Journal ref: Phys. Rev. B 103, 045305 (2021)

Light-hole states in a strained quantum dot: numerical calculation and phenomenological models

Authors: K. Moratis, J. Cibert, D. Ferrand, Y. -M. Niquet

Abstract: Starting from the numerical solution of the 6-band \textbf{k.p} description of a lattice-mismatched ellipsoidal quantum dot situated inside a nanowire, including a spin Zeeman effect with values appropriate to a dilute magnetic semiconductor, we propose and test phenomenological models of the effect of the built-in strain on the heavy hole, light hole and exciton states. We test the validity and t… ▽ More Starting from the numerical solution of the 6-band \textbf{k.p} description of a lattice-mismatched ellipsoidal quantum dot situated inside a nanowire, including a spin Zeeman effect with values appropriate to a dilute magnetic semiconductor, we propose and test phenomenological models of the effect of the built-in strain on the heavy hole, light hole and exciton states. We test the validity and the limits of a description restricted to a ($Γ_8$) quadruplet of ground states and we demonstrate the role of the interactions of the light-hole state with light-hole excited states. We show that the built-in axial strain not only defines the character, heavy-hole or light-hole, of the ground state, but also mixes significantly the light-hole state with the split-off band's states: Even for a spin-orbit energy as large as 1 eV, that mixing induces first-order modifications of properties such as the spin value and anisotropy, the oscillator strength, and the electron-hole exchange, for which we extend the description to the light-hole exciton. CdTe/ZnTe quantum dots are mainly used as a test case but the concepts we discuss apply to many heterostructures, from mismatched II-VI and III-V quantum dots and nanowires, to III-V nanostructures submitted to an applied stress and to silicon nanodevices with even smaller residual strains. △ Less

Submitted 2 June, 2021; v1 submitted 3 August, 2020; originally announced August 2020.

Journal ref: Phys. Rev. B 103, 245304 (2021)

Spin readout of a CMOS quantum dot by gate reflectometry and spin-dependent tunnelling

Authors: V. N. Ciriano-Tejel, M. A. Fogarty, S. Schaal, L. Hutin, B. Bertrand, Lisa Ibberson, M. F. Gonzalez-Zalba, J. Li, Y. -M. Niquet, M. Vinet, J. J. L. Morton

Abstract: Silicon spin qubits are promising candidates for realising large scale quantum processors, benefitting from a magnetically quiet host material and the prospects of leveraging the mature silicon device fabrication industry. We report the measurement of an electron spin in a singly-occupied gate-defined quantum dot, fabricated using CMOS compatible processes at the 300 mm wafer scale. For readout, w… ▽ More Silicon spin qubits are promising candidates for realising large scale quantum processors, benefitting from a magnetically quiet host material and the prospects of leveraging the mature silicon device fabrication industry. We report the measurement of an electron spin in a singly-occupied gate-defined quantum dot, fabricated using CMOS compatible processes at the 300 mm wafer scale. For readout, we employ spin-dependent tunneling combined with a low-footprint single-lead quantum dot charge sensor, measured using radiofrequency gate reflectometry. We demonstrate spin readout in two devices using this technique, obtaining valley splittings in the range 0.5-0.7 meV using excited state spectroscopy, and measure a maximum electron spin relaxation time ($T_1$) of $9 \pm 3$ s at 1 Tesla. These long lifetimes indicate the silicon nanowire geometry and fabrication processes employed here show a great deal of promise for qubit devices, while the spin-readout method demonstrated here is well-suited to a variety of scalable architectures. △ Less

Submitted 12 June, 2020; v1 submitted 15 May, 2020; originally announced May 2020.

Comments: 8 pages, 4 figures, 57 cites. v3: added acknowledges

Journal ref: PRX Quantum 2, 010353 (2021)

Charge detection in an array of CMOS quantum dots

Authors: Emmanuel Chanrion, David J. Niegemann, Benoit Bertrand, Cameron Spence, Baptiste Jadot, Jing Li, Pierre-André Mortemousque, Louis Hutin, Romain Maurand, Xavier Jehl, Marc Sanquer, Silvano De Franceschi, Christopher Bäuerle, Franck Balestro, Yann-Michel Niquet, Maud Vinet, Tristan Meunier, Matias Urdampilleta

Abstract: The recent development of arrays of quantum dots in semiconductor nanostructures highlights the progress of quantum devices toward large scale. However, how to realize such arrays on a scalable platform such as silicon is still an open question. One of the main challenge resides in the detection of charges within the array. It is a prerequisite functionality to initialize a desired charge state an… ▽ More The recent development of arrays of quantum dots in semiconductor nanostructures highlights the progress of quantum devices toward large scale. However, how to realize such arrays on a scalable platform such as silicon is still an open question. One of the main challenge resides in the detection of charges within the array. It is a prerequisite functionality to initialize a desired charge state and readout spins through spin-to-charge conversion mechanisms. In this paper, we use two methods based on either a single-lead charge detector, or a reprogrammable single electron transistor. Thanks to these methods, we study the charge dynamics and sensitivity by performing single shot detection of the charge. Finally, we can probe the charge stability at any node of a linear array and assess the Coulomb disorder in the structure. We find an electrochemical potential fluctuation induced by charge noise comparable to that reported in other silicon quantum dots. △ Less

Submitted 3 April, 2020; v1 submitted 2 April, 2020; originally announced April 2020.

Comments: 10 pages, 6 figures

Journal ref: Phys. Rev. Applied 14, 024066 (2020)

Hole-phonon interactions in quantum dots: Effects of phonon confinement and encapsulation materials on spin-orbit qubits

Authors: Jing Li, Benjamin Venitucci, Yann-Michel Niquet

Abstract: Spin-phonon interactions are one of the mechanisms limiting the lifetime of spin qubits made in semiconductor quantum dots. At variance with other mechanisms such as charge noise, phonons are intrinsic to the device and can hardly be mitigated. They set, therefore fundamental limits to the relaxation time of the qubits. Here we introduce a general framework for the calculation of the spin (and cha… ▽ More Spin-phonon interactions are one of the mechanisms limiting the lifetime of spin qubits made in semiconductor quantum dots. At variance with other mechanisms such as charge noise, phonons are intrinsic to the device and can hardly be mitigated. They set, therefore fundamental limits to the relaxation time of the qubits. Here we introduce a general framework for the calculation of the spin (and charge) transition rates induced by bulk (3D) and strongly confined 1D or 2D phonons. We discuss the particular case of hole spin-orbit qubits described by the 6 bands kp model. We next apply this theory to a hole qubit in a silicon-on-insulator device. We show that spin relaxation in this device is dominated by a band mixing term that couples the holes to transverse acoustic phonons through the valence band deformation potential d, and optimize the bias point and magnetic field orientation to maximize the number of Rabi oscillations Q that can be achieved within on relaxation time T1. Despite the strong spin-orbit coupling in the valence band, the phonon-limited Q can reach a few tens of thousands. We next explore the effects of phonon confinement in 1D and 2D structures, and the impact of the encapsulation materials on the relaxation rates. We show that the spin lifetimes can depend on the structure of the device over micrometer-long length scales and that they improve when the materials around the qubit get harder. Phonon engineering in semiconductor qubits may therefore become relevant once the extrinsic sources of relaxation have been reduced. △ Less

Submitted 17 August, 2020; v1 submitted 17 March, 2020; originally announced March 2020.

Comments: 17 pages, 10 figures + 10 pages supplementary information

Journal ref: Phys. Rev. B 102, 075415 (2020)

All-Electrical Control of an Electron Spin/Valley Quantum Bit in SOI CMOS Technology

Authors: Léo Bourdet, Louis Hutin, Benoit Bertrand, Andrea Corna, Heorhii Bohuslavskyi, Anthony Amisse, Alessandro Crippa, Romain Maurand, Sylvain Barraud, Matias Urdampilleta, Christopher Bäuerle, Tristan Meunier, Marc Sanquer, Xavier Jehl, Silvano De Franceschi, Yann-Michel Niquet, Maud Vinet

Abstract: We fabricated Quantum Dot (QD) devices using a standard SOI CMOS process flow, and demonstrated that the spin of confined electrons could be controlled via a local electrical-field excitation, owing to inter-valley spin-orbit coupling. We discuss that modulating the confinement geometry via an additional electrode may enable switching a quantum bit (qubit) between an electrically-addressable valle… ▽ More We fabricated Quantum Dot (QD) devices using a standard SOI CMOS process flow, and demonstrated that the spin of confined electrons could be controlled via a local electrical-field excitation, owing to inter-valley spin-orbit coupling. We discuss that modulating the confinement geometry via an additional electrode may enable switching a quantum bit (qubit) between an electrically-addressable valley configuration and a protected spin configuration. This proposed scheme bears relevance to improve the trade-off between fast operations and slow decoherence for quantum computing on a Si qubit platform. Finally, we evoke the impact of process-induced variability on the operating bias range. △ Less

Submitted 20 December, 2019; originally announced December 2019.

Comments: arXiv admin note: substantial text overlap with arXiv:1912.09806

Journal ref: IEEE Transactions on Electron Devices ( Volume: 65 , Issue: 11 , Nov. 2018 )

Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays

Authors: L. Hutin, B. Bertrand, E. Chanrion, H. Bohuslavskyi, F. Ansaloni, T. -Y. Yang, J. Michniewicz, D. J. Niegemann, C. Spence, T. Lundberg, A. Chatterjee, A. Crippa, J. Li, R. Maurand, X. Jehl, M. Sanquer, M. F. Gonzalez-Zalba, F. Kuemmeth, Y. -M. Niquet, S. De Franceschi, M. Urdampilleta, T. Meunier, M. Vinet

Abstract: We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spindependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent qua… ▽ More We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spindependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent quantum capacitance. These results bear significance for fast, high-fidelity single-shot readout of large arrays of foundrycompatible Si MOS spin qubits. △ Less

Submitted 20 December, 2019; originally announced December 2019.

Journal ref: 2019 IEEE International Electron Devices Meeting (IEDM)

Towards scalable silicon quantum computing

Authors: M. Vinet, L. Hutin, B. Bertrand, S. Barraud, J. -M. Hartmann, Y. -J. Kim, V. Mazzocchi, A. Amisse, H. Bohuslavskyi, L. Bourdet, A. Crippa, X. Jehl, R. Maurand, Y. -M. Niquet, M. Sanquer, B. Venitucci, B. Jadot, E. Chanrion, P. -A. Mortemousque, C. Spence, M. Urdampilleta, S. De Franceschi, T. Meunier

Abstract: We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the back gate voltage, which prefigures tuning capabilities in scalable qubits architectures. We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the back gate voltage, which prefigures tuning capabilities in scalable qubits architectures. △ Less

Submitted 20 December, 2019; originally announced December 2019.

Journal ref: 2018 IEEE International Electron Devices Meeting (IEDM)

All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology

Authors: L. Hutin, L. Bourdet, B. Bertrand, A. Corna, H. Bohuslavskyi, A. Amisse, A. Crippa, R. Maurand, S. Barraud, M. Urdampilleta, C. Bäuerle, T. Meunier, M. Sanquer, X. Jehl, S. De Franceschi, Y. -M. Niquet, M. Vinet

Abstract: We successfully demonstrated experimentally the electrical-field-mediated control of the spin of electrons confined in an SOI Quantum Dot (QD) device fabricated with a standard CMOS process flow. Furthermore, we show that the Back-Gate control in SOI devices enables switching a quantum bit (qubit) between an electrically-addressable, yet charge noise-sensitive configuration, and a protected config… ▽ More We successfully demonstrated experimentally the electrical-field-mediated control of the spin of electrons confined in an SOI Quantum Dot (QD) device fabricated with a standard CMOS process flow. Furthermore, we show that the Back-Gate control in SOI devices enables switching a quantum bit (qubit) between an electrically-addressable, yet charge noise-sensitive configuration, and a protected configuration. △ Less

Submitted 20 December, 2019; originally announced December 2019.

Journal ref: 2018 IEEE Symposium on VLSI Technology

SOI technology for quantum information processing

Authors: S. De Franceschi, L. Hutin, R. Maurand, L. Bourdet, H. Bohuslavskyi, A. Corna, D. Kotekar-Patil, S. Barraud, X. Jehl, Y. -M. Niquet, M. Sanquer, M. Vinet

Abstract: We present recent progress towards the implementation of a scalable quantum processor based on fully-depleted silicon-on-insulator (FDSOI) technology. In particular, we discuss an approach where the elementary bits of quantum information - so-called qubits - are encoded in the spin degree of freedom of gate-confined holes in p-type devices. We show how a hole-spin can be efficiently manipulated by… ▽ More We present recent progress towards the implementation of a scalable quantum processor based on fully-depleted silicon-on-insulator (FDSOI) technology. In particular, we discuss an approach where the elementary bits of quantum information - so-called qubits - are encoded in the spin degree of freedom of gate-confined holes in p-type devices. We show how a hole-spin can be efficiently manipulated by means of a microwave excitation applied to the corresponding confining gate. The hole spin state can be read out and reinitialized through a Pauli blockade mechanism. The studied devices are derived from silicon nanowire field-effect transistors. We discuss their prospects for scalability and, more broadly, the potential advantages of FDSOI technology. △ Less

Submitted 17 December, 2019; originally announced December 2019.

Comments: 4 pages, 13 figures, Invited contribution at IEDM 2016

Journal ref: 2016 IEEE International Electron Devices Meeting (IEDM), 13.4. 1-13.4. 4

A Spin Quintet in a Silicon Double Quantum Dot: Spin Blockade and Relaxation

Authors: Theodor Lundberg, Jing Li, Louis Hutin, Benoit Bertrand, David J. Ibberson, Chang-Min Lee, David J. Niegemann, Matias Urdampilleta, Nadia Stelmashenko, Tristan Meunier, Jason W. A. Robinson, Lisa Ibberson, Maud Vinet, Yann-Michel Niquet, M. Fernando Gonzalez-Zalba

Abstract: Spins in gate-defined silicon quantum dots are promising candidates for implementing large-scale quantum computing. To read the spin state of these qubits, the mechanism that has provided the highest fidelity is spin-to-charge conversion via singlet-triplet spin blockade, which can be detected in-situ using gate-based dispersive sensing. In systems with a complex energy spectrum, like silicon quan… ▽ More Spins in gate-defined silicon quantum dots are promising candidates for implementing large-scale quantum computing. To read the spin state of these qubits, the mechanism that has provided the highest fidelity is spin-to-charge conversion via singlet-triplet spin blockade, which can be detected in-situ using gate-based dispersive sensing. In systems with a complex energy spectrum, like silicon quantum dots, accurately identifying when singlet-triplet blockade occurs is hence of major importance for scalable qubit readout. In this work, we present a description of spin blockade physics in a tunnel-coupled silicon double quantum dot defined in the corners of a split-gate transistor. Using gate-based magnetospectroscopy, we report successive steps of spin blockade and spin blockade lifting involving spin states with total spin angular momentum up to $S=3$. More particularly, we report the formation of a hybridized spin quintet state and show triplet-quintet and quintet-septet spin blockade. This enables studies of the quintet relaxation dynamics from which we find $T_1 \sim 4 ~μs$. Finally, we develop a quantum capacitance model that can be applied generally to reconstruct the energy spectrum of a double quantum dot including the spin-dependent tunnel couplings and the energy splitting between different spin manifolds. Our results open for the possibility of using Si CMOS quantum dots as a tuneable platform for studying high-spin systems. △ Less

Submitted 22 October, 2019; originally announced October 2019.

Comments: 7 pages, 3 figures

Journal ref: Phys. Rev. X 10, 041010 (2020)

Simple model for electrical hole spin manipulation in semiconductor quantum dots: Impact of dot material and orientation

Authors: Benjamin Venitucci, Yann-Michel Niquet

Abstract: We analyze a prototypical particle-in-a-box model for a hole spin qubit. This quantum dot is subjected to static magnetic and electric fields, and to a radio-frequency electric field that drives Rabi oscillations owing to spin-orbit coupling. We derive the equations for the Rabi frequency in a regime where the Rabi oscillations mostly result from the coupling between the qubit states and a single… ▽ More We analyze a prototypical particle-in-a-box model for a hole spin qubit. This quantum dot is subjected to static magnetic and electric fields, and to a radio-frequency electric field that drives Rabi oscillations owing to spin-orbit coupling. We derive the equations for the Rabi frequency in a regime where the Rabi oscillations mostly result from the coupling between the qubit states and a single nearby excited state. This regime has been shown to prevail in, e.g., hole spin qubits in thin silicon-on-insulator nanowires. The equations for the Rabi frequency highlight the parameters that control the Rabi oscillations. We show, in particular, that [110]-oriented dots on (001) substrates perform much better than [001]-oriented dots because they take best advantage of the anisotropy of the valence band of the host material. We also conclude that silicon provides the best opportunities for fast Rabi oscillations in this regime despite small spin-orbit coupling. △ Less

Submitted 1 April, 2019; v1 submitted 28 January, 2019; originally announced January 2019.

Comments: 14 pages, 8 figures

Journal ref: Phys. Rev. B 99, 115317 (2019)

Light / heavy hole switching with correlated characterization on a single quantum dot : Probing the light hole / heavy hole switching with correlated magneto-optical spectroscopy and chemical analysis on a single quantum dot

Authors: Alberto Artioli, Pamela Rueda-Fonseca, Kimon Moratis, Jean-François Motte, Fabrice Donatini, Martien I Den Hertog, Eric Robin, Régis André, Yann-Michel Niquet, Edith Bellet-Amalric, Joel Cibert, David Ferrand

Abstract: A whole series of complementary studies have been performed on the same, single nanowire containing a quantum dot: cathodoluminescence spectroscopy and imaging, micro-photoluminescence spectroscopy under magnetic field and as a function of temperature, and energy-dispersive X-ray spectrometry and imaging. The ZnTe nanowire was deposited on a Si 3 N 4 membrane with Ti/Al patterns. The complete set… ▽ More A whole series of complementary studies have been performed on the same, single nanowire containing a quantum dot: cathodoluminescence spectroscopy and imaging, micro-photoluminescence spectroscopy under magnetic field and as a function of temperature, and energy-dispersive X-ray spectrometry and imaging. The ZnTe nanowire was deposited on a Si 3 N 4 membrane with Ti/Al patterns. The complete set of data shows that the CdTe quantum dot features the heavy-hole state as a ground state, although the compressive mismatch strain promotes a light-hole ground state as soon as the aspect ratio is larger than unity (elongated dot). A numerical calculation of the whole structure shows that the transition from the heavy-hole to the light-hole configuration is pushed toward values of the aspect ratio much larger than unity by the presence of a (Zn,Mg)Te shell, and that the effect is further enhanced by a small valence band offset between the semiconductors in the dot and around it. △ Less

Submitted 15 January, 2019; originally announced January 2019.

Electrical manipulation of semiconductor spin qubits within the g-matrix formalism

Authors: Benjamin Venitucci, Léo Bourdet, Daniel Pouzada, Yann-Michel Niquet

Abstract: We discuss the modeling of the electrical manipulation of spin qubits in the linear-response regime where the Rabi frequency is proportional to the magnetic field and to the radio-frequency electric field excitation. We show that the Rabi frequency can be obtained from a generalized g-tensor magnetic resonance formula featuring a g-matrix and its derivative g' with respect to the electric field (o… ▽ More We discuss the modeling of the electrical manipulation of spin qubits in the linear-response regime where the Rabi frequency is proportional to the magnetic field and to the radio-frequency electric field excitation. We show that the Rabi frequency can be obtained from a generalized g-tensor magnetic resonance formula featuring a g-matrix and its derivative g' with respect to the electric field (or gate voltage) as inputs. These matrices can be easily calculated from the wave functions of the qubit at zero magnetic field. The g-matrix formalism therefore provides the complete dependence of the Larmor and Rabi frequencies on the orientation of the magnetic field at very low computational cost. It also provides a compact model for the control of the qubit, and a simple framework for the analysis of the effects of symmetries on the anisotropy of the Larmor and Rabi frequencies. The g-matrix formalism applies to a wide variety of electron and hole qubits, and we focus on a hole qubit in a silicon-on-insulator nanowire as an illustration. We show that the Rabi frequency of this qubit shows a complex dependence on the orientation of the magnetic field, and on the gate voltages that control the symmetry of the hole wave functions. We point out that the qubit may be advantageously switched between two bias points, one where it can be manipulated efficiently, and one where it is largely decoupled from the gate field but presumably longer lived. We also discuss the role of residual strains in such devices in relation to recent experiments. △ Less

Submitted 24 October, 2018; v1 submitted 24 July, 2018; originally announced July 2018.

Comments: To be published in Physical Review B

Journal ref: Phys. Rev. B 98, 155319 (2018)

Electric-field tuning of the valley splitting in silicon corner dots

Authors: David J. Ibberson, Léo Bourdet, José C. Abadillo-Uriel, Imtiaz Ahmed, Sylvain Barraud, María J. Calderón, Yann-Michel Niquet, M. Fernando Gonzalez-Zalba

Abstract: We perform an excited state spectroscopy analysis of a silicon corner dot in a nanowire field-effect transistor to assess the electric field tunability of the valley splitting. First, we demonstrate a back-gate-controlled transition between a single quantum dot and a double quantum dot in parallel that allows tuning the device in to corner dot formation. We find a linear dependence of the valley s… ▽ More We perform an excited state spectroscopy analysis of a silicon corner dot in a nanowire field-effect transistor to assess the electric field tunability of the valley splitting. First, we demonstrate a back-gate-controlled transition between a single quantum dot and a double quantum dot in parallel that allows tuning the device in to corner dot formation. We find a linear dependence of the valley splitting on back-gate voltage, from $880~μ\text{eV}$ to $610~μ\text{eV}$ with a slope of $-45\pm 3~μ\text{eV/V}$ (or equivalently a slope of $-48\pm 3~μ\text{eV/(MV/m)}$ with respect to the effective field). The experimental results are backed up by tight-binding simulations that include the effect of surface roughness, remote charges in the gate stack and discrete dopants in the channel. Our results demonstrate a way to electrically tune the valley splitting in silicon-on-insulator-based quantum dots, a requirement to achieve all-electrical manipulation of silicon spin qubits. △ Less

Submitted 23 July, 2018; v1 submitted 21 May, 2018; originally announced May 2018.

Comments: 5 pages, 3 figures. In this version: Discussion of model expanded; Fig. 3 updated; Refs. added (15, 22, 32, 34, 35, 36, 37)

Journal ref: Applied Physics Letters 113, 053104 (2018)

All-electrical manipulation of silicon spin qubits with tunable spin-valley mixing

Authors: Léo Bourdet, Yann-Michel Niquet

Abstract: We show that the mixing between spin and valley degrees of freedom in a silicon quantum bit (qubit) can be controlled by a static electric field acting on the valley splitting $Δ$. Thanks to spin-orbit coupling, the qubit can be continuously switched between a spin mode (where the quantum information is encoded into the spin) and a valley mode (where the the quantum information is encoded into the… ▽ More We show that the mixing between spin and valley degrees of freedom in a silicon quantum bit (qubit) can be controlled by a static electric field acting on the valley splitting $Δ$. Thanks to spin-orbit coupling, the qubit can be continuously switched between a spin mode (where the quantum information is encoded into the spin) and a valley mode (where the the quantum information is encoded into the valley). In the spin mode, the qubit is more robust with respect to inelastic relaxation and decoherence, but is hardly addressable electrically. It can however be brought into the valley mode then back to the spin mode for electrical manipulation. This opens new perspectives for the development of robust and scalable, electrically addressable spin qubits on silicon. We illustrate this with tight-binding simulations on a so-called "corner dot" in a silicon-on-insulator device where the confinement and valley splitting can be independently tailored by a front and a back gate. △ Less

Submitted 13 February, 2018; originally announced February 2018.

Journal ref: Phys. Rev. B 97, 155433 (2018)

Electrical spin driving by $g$-matrix modulation in spin-orbit qubits

Authors: Alessandro Crippa, Romain Maurand, Léo Bourdet, Dharmraj Kotekar-Patil, Anthony Amisse, Xavier Jehl, Marc Sanquer, Romain Laviéville, Heorhii Bohuslavskyi, Louis Hutin, Sylvain Barraud, Maud Vinet, Yann-Michel Niquet, Silvano De Franceschi

Abstract: In a semiconductor spin qubit with sizable spin-orbit coupling, coherent spin rotations can be driven by a resonant gate-voltage modulation. Recently, we have exploited this opportunity in the experimental demonstration of a hole spin qubit in a silicon device. Here we investigate the underlying physical mechanisms by measuring the full angular dependence of the Rabi frequency as well as the gate-… ▽ More In a semiconductor spin qubit with sizable spin-orbit coupling, coherent spin rotations can be driven by a resonant gate-voltage modulation. Recently, we have exploited this opportunity in the experimental demonstration of a hole spin qubit in a silicon device. Here we investigate the underlying physical mechanisms by measuring the full angular dependence of the Rabi frequency as well as the gate-voltage dependence and anisotropy of the hole $g$-factors. We show that a $g$-matrix formalism can simultaneously capture and discriminate the contributions of two mechanisms so far independently discussed in the literature: one associated with the modulation of the $g$ factors, and measurable by Zeeman energy spectroscopy, the other not. Our approach has a general validity and can be applied to the analysis of other types of spin-orbit qubits. △ Less

Submitted 4 April, 2018; v1 submitted 24 October, 2017; originally announced October 2017.

Comments: Letter format (4 pages, 4 figures). Detailed theory in Supplemenatl Material

Journal ref: Phys. Rev. Lett. 120, 137702 (2018)

Linear hyperfine tuning of donor spins in silicon using hydrostatic strain

Authors: John Mansir, Pierandrea Conti, Zaiping Zeng, Jarryd J. Pla, Patrice Bertet, Michael W. Swift, Chris G. Van de Walle, Mike L. W. Thewalt, Benoit Sklenard, Yann-Michel Niquet, John J. L. Morton

Abstract: We experimentally study the coupling of Group V donor spins in silicon to mechanical strain, and measure strain-induced frequency shifts which are linear in strain, in contrast to the quadratic dependence predicted by the valley repopulation model (VRM), and therefore orders of magnitude greater than that predicted by the VRM for small strains $|\varepsilon| < 10^{-5}$. Through both tight-binding… ▽ More We experimentally study the coupling of Group V donor spins in silicon to mechanical strain, and measure strain-induced frequency shifts which are linear in strain, in contrast to the quadratic dependence predicted by the valley repopulation model (VRM), and therefore orders of magnitude greater than that predicted by the VRM for small strains $|\varepsilon| < 10^{-5}$. Through both tight-binding and first principles calculations we find that these shifts arise from a linear tuning of the donor hyperfine interaction term by the hydrostatic component of strain and achieve semi-quantitative agreement with the experimental values. Our results provide a framework for making quantitative predictions of donor spins in silicon nanostructures, such as those being used to develop silicon-based quantum processors and memories. The strong spin-strain coupling we measure (up to 150~GHz per strain, for Bi-donors in Si), offers a method for donor spin tuning --- shifting Bi donor electron spins by over a linewidth with a hydrostatic strain of order $10^{-6}$ --- as well as opportunities for coupling to mechanical resonators. △ Less

Submitted 23 March, 2018; v1 submitted 2 October, 2017; originally announced October 2017.

Journal ref: Phys. Rev. Lett. 120, 167701 (2018)

Split-Channel Ballistic Transport in an InSb Nanowire

Authors: J. C. Estrada Saldaña, Y. M. Niquet, J. P. Cleuziou, E. J. H. Lee, D. Car, S. R. Plissard, E. P. A. M. Bakkers, S. De Franceschi

Abstract: We report an experimental study of one-dimensional (1D) electronic transport in an InSb semiconducting nanowire. Three bottom gates are used to locally deplete the nanowire creating a ballistic quantum point contact with only a few conducting channels. In a magnetic field, the Zeeman splitting of the corresponding 1D subbands is revealed by the emergence of conductance plateaus at multiples of… ▽ More We report an experimental study of one-dimensional (1D) electronic transport in an InSb semiconducting nanowire. Three bottom gates are used to locally deplete the nanowire creating a ballistic quantum point contact with only a few conducting channels. In a magnetic field, the Zeeman splitting of the corresponding 1D subbands is revealed by the emergence of conductance plateaus at multiples of $e^2$/h, yet we find a quantized conductance pattern largely dependent on the configuration of voltages applied to the bottom gates. In particular, we can make the first plateau disappear leaving a first conductance step of 2$e^2/h$, which is indicative of a remarkable two-fold subband degeneracy that can persist up to several Tesla. For certain gate voltage settings, we also observe the presence of discrete resonant states producing conductance features that can resemble those expected from the opening of a helical gap in the subband structure. We explain our experimental findings through the formation of two spatially separated 1D conduction channels. △ Less

Submitted 9 March, 2018; v1 submitted 8 September, 2017; originally announced September 2017.