Non-imaging metasurface design for collimated beam shaping
Authors:
Kirstine Engell Sandager Nielsen,
Mads Allerup Carlsen,
Xavier Zambrana-Puyalto,
Søren Raza
Abstract:
Non-imaging optical lenses can shape the light intensity from incoherent sources to a desired target intensity profile, which is important for applications in lighting, solar light concentration, and optical beam shaping. Their surface curvatures are designed to ensure optimal transfer of energy from the light source to the target. The performance of such lenses is directly linked to their asymmet…
▽ More
Non-imaging optical lenses can shape the light intensity from incoherent sources to a desired target intensity profile, which is important for applications in lighting, solar light concentration, and optical beam shaping. Their surface curvatures are designed to ensure optimal transfer of energy from the light source to the target. The performance of such lenses is directly linked to their asymmetric freeform surface curvature, which is challenging to manufacture. Metasurfaces can mimic any surface curvature without additional fabrication difficulty by imparting a spatially-dependent phase delay using optical antennas. As a result, metasurfaces are uniquely suited to realize non-imaging optics, but non-imaging design principles have not yet been established for metasurfaces. Here, we take an important step in connecting non-imaging optics and metasurface optics, by presenting a phase-design method for beam shaping based on the concept of optimal transport. We establish a theoretical framework that enables a collimated beam to be redistributed by a metasurface to a desired output intensity profile. The optimal transport formulation leads to metasurface phase profiles that transmit all energy from the incident beam to the output beam, resulting in an efficient beam shaping process. Through a variety of examples, we show that our approach accommodates a diverse range of different input and output intensity profiles. Last but not least, a full field simulation of a metasurface has been done to verify our phase-design framework.
△ Less
Submitted 30 August, 2023; v1 submitted 15 July, 2022;
originally announced July 2022.
Super-Resolution Nanolithography of Two-Dimensional Materials by Anisotropic Etching
Authors:
Dorte R. Danielsen,
Anton Lyksborg-Andersen,
Kirstine E. S. Nielsen,
Bjarke S. Jessen,
Timothy J. Booth,
Manh-Ha Doan,
Yingqiu Zhou,
Peter Bøggild,
Lene Gammelgaard
Abstract:
Nanostructuring allows altering of the electronic and photonic properties of two-dimensional (2D) materials. The efficiency, flexibility, and convenience of top-down lithography processes are however compromised by nm-scale edge roughness and resolution variability issues, which especially affects the performance of 2D materials. Here we study how dry anisotropic etching of multilayer 2D materials…
▽ More
Nanostructuring allows altering of the electronic and photonic properties of two-dimensional (2D) materials. The efficiency, flexibility, and convenience of top-down lithography processes are however compromised by nm-scale edge roughness and resolution variability issues, which especially affects the performance of 2D materials. Here we study how dry anisotropic etching of multilayer 2D materials with sulfur hexafluoride (SF6) may overcome some of these issues, showing results for hexagonal boron nitride (hBN), tungsten disulfide (WS2), tungsten diselenide (WSe2), molybdenum disulfide (MoS2), molybdenum ditelluride (MoTe2). Scanning and transmission electron microscopy reveal that etching leads to anisotropic hexagonal features in the studied transition metal dichalcogenides, with the relative degree of anisotropy ranked as: WS2 > WSe2 > MoTe2 / MoS2. Etched holes are terminated by zigzag edges while etched dots (protrusions) are terminated by armchair edges. This can be explained by Wulff constructions, taking the relative stabilities of the edges and the AA stacking order into account. Patterns in WS2 are transferred to an underlying graphite layer, demonstrating a possible use for creating sub-10 nm features. In contrast, multilayer hBN exhibits no lateral anisotropy, but shows consistent vertical etch angles, independent of crystal orientation. This is used to create super-resolution lithographic patterns with ultra-sharp corners at the base of the hBN crystal, which are transferred into an underlying graphite crystal. We find that the anisotropic SF6 reactive ion etching process makes it possible to downsize nanostructures to obtain smooth edges, sharp corners, and feature sizes significantly below the resolution limit of electron beam lithography. The nanostructured 2D materials can be used themselves or as etch-masks to pattern other nanomaterials.
△ Less
Submitted 7 October, 2021;
originally announced October 2021.
