Showing 1–5 of 5 results for author: Neumann, A C

Anisotropic magnetoresistance in a 2DEG in a quasi-random magnetic field

Authors: A. W. Rushforth, B. L. Gallagher, P. C. Main, A. C. Neumann, M. Henini, C. H. Marrows, B. J. Hickey

Abstract: We present magnetotransport results for a 2D electron gas (2DEG) subject to the quasi-random magnetic field produced by randomly positioned sub-micron Co dots deposited onto the surface of a GaAs/AlGaAs heterostructure. We observe strong local and non-local anisotropic magnetoresistance for external magnetic fields in the plane of the 2DEG. Monte-Carlo calculations confirm that this is due to th… ▽ More We present magnetotransport results for a 2D electron gas (2DEG) subject to the quasi-random magnetic field produced by randomly positioned sub-micron Co dots deposited onto the surface of a GaAs/AlGaAs heterostructure. We observe strong local and non-local anisotropic magnetoresistance for external magnetic fields in the plane of the 2DEG. Monte-Carlo calculations confirm that this is due to the changing topology of the quasi-random magnetic field in which electrons are guided predominantly along contours of zero magnetic field. △ Less

Submitted 22 August, 2003; originally announced August 2003.

Comments: 4 pages, 6 figures, submitted to Phys. Rev. B

Anisotropic Magnetoresistance in GaMnAs films

Authors: K. Y. Wang, K. W. Edmonds, R. P. Campion, L. X. Zhao, A. C. Neumann, C. T. Foxon, B. L. Gallagher, P. C. Main

Abstract: The magnetoresistance in a series of Ga1-xMnxAs samples with 0.2 =< x =< 0.8 have been measured for three mutually orthogonal orientations of the external magnetic field. The anisotropy magnetoresistance decreases with increasing of the Mn content, which means that the magnetic disorder or defects scattering increases with increasing of Mn content. And also the magneto-crystalline anisotropy inc… ▽ More The magnetoresistance in a series of Ga1-xMnxAs samples with 0.2 =< x =< 0.8 have been measured for three mutually orthogonal orientations of the external magnetic field. The anisotropy magnetoresistance decreases with increasing of the Mn content, which means that the magnetic disorder or defects scattering increases with increasing of Mn content. And also the magneto-crystalline anisotropy increases with increasing of Mn concentration. △ Less

Submitted 29 November, 2002; originally announced November 2002.

Comments: Presented at ICPS-26, July 2002

High Curie temperature GaMnAs obtained by resistance-monitored annealing

Authors: K. W. Edmonds, K. Y. Wang, R. P. Campion, A. C. Neumann, N. R. S. Farley, B. L. Gallagher, C. T. Foxon

Abstract: We show that by annealing Ga1-xMnxAs thin films at temperatures significantly lower than in previous studies, and monitoring the resistivity during growth, an unprecedented high Curie temperature Tc and conductivity can be obtained. Tc is unambiguously determined to be 118 K for Mn concentration x=0.05, 140 K for x=0.06, and 120 K for x=0.08. We also identify a clear correlation between Tc and t… ▽ More We show that by annealing Ga1-xMnxAs thin films at temperatures significantly lower than in previous studies, and monitoring the resistivity during growth, an unprecedented high Curie temperature Tc and conductivity can be obtained. Tc is unambiguously determined to be 118 K for Mn concentration x=0.05, 140 K for x=0.06, and 120 K for x=0.08. We also identify a clear correlation between Tc and the room temperature conductivity. The results indicate that Curie temperatures significantly in excess of the current values are achievable with improvements in growth and post-growth annealing conditions. △ Less

Submitted 24 September, 2002; originally announced September 2002.

Comments: 4 pages, submitted to Applied Physics Letters

Magnetoresistance and Hall Effect in the Ferromagnetic Semiconductor GaMnAs

Authors: K W Edmonds, R P Campion, K-Y Wang, A C Neumann, B L Gallagher, C T Foxon, P C Main

Abstract: The resistivity, temperature, and magnetic field dependence of the anomalous Hall effect in a series of metallic Ga1-xMnxAs thin films with 0.015=<x=<0.08 is presented. A quadratic dependence of the anomalous Hall resistance on the resistivity is observed, with a magnitude which is in agreement with Berry phase theories of the anomalous Hall effect in dilute magnetic semiconductors. The resistivity, temperature, and magnetic field dependence of the anomalous Hall effect in a series of metallic Ga1-xMnxAs thin films with 0.015=<x=<0.08 is presented. A quadratic dependence of the anomalous Hall resistance on the resistivity is observed, with a magnitude which is in agreement with Berry phase theories of the anomalous Hall effect in dilute magnetic semiconductors. △ Less

Submitted 5 September, 2002; originally announced September 2002.

Comments: 3 pages, 4 figures, MMM conference proceedings

The Hall effect and hole densities in high Tc GaMnAs thin films

Authors: K. W. Edmonds, K. Y. Wang, R. P. Campion, A. C. Neumann, C. T. Foxon, B. L. Gallagher, P. C. Main

Abstract: By studying the Hall effect in a series of low resistivity Ga1-xMnxAs samples, accurate values for the hole density p, Mn concentration x, and Curie temperature Tc are obtained over the range 0.015=<x=<0.08. The hole density corresponds to 90% of the Mn concentration at low x, and has a maximum value of 1.0x10-27 m-3 when Tc=125K for x=0.06. This data allows the first meaningful comparison of me… ▽ More By studying the Hall effect in a series of low resistivity Ga1-xMnxAs samples, accurate values for the hole density p, Mn concentration x, and Curie temperature Tc are obtained over the range 0.015=<x=<0.08. The hole density corresponds to 90% of the Mn concentration at low x, and has a maximum value of 1.0x10-27 m-3 when Tc=125K for x=0.06. This data allows the first meaningful comparison of mean field predicted Curie temperatures with experiment over a wide range of x. The theory is in qualitative agreement with experiment, but overestimates Tc at large x and underestimates TC at low x. △ Less

Submitted 23 August, 2002; v1 submitted 24 May, 2002; originally announced May 2002.

Comments: Submitted to Appl. Phys. Lett., 8 pages, 4 figs