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Impact of interface defects on the band alignment and performance of TiO$_2$/MAPI/Cu$_2$O perovskite solar cells
Authors:
Nicolae Filipoiu,
Marina Cuzminschi,
Calin-Andrei Pantis-Simut,
Kristinn Torfason,
Rachel Elizabeth Brophy,
Andrei Manolescu,
Roxana E. Patru,
Cristina Besleaga,
George E. Stan,
Ioana Pintilie,
George Alexandru Nemnes
Abstract:
Optimizing the interfaces in perovskite solar cells (PSCs) is essential for enhancing their performance, improving their stability, and making them commercially viable for large-scale deployment in solar energy harvesting applications. Point defects, like vacancies, have a dual role, as they can inherently provide a proper doping, but they can also reduce the collected current by trap-assisted rec…
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Optimizing the interfaces in perovskite solar cells (PSCs) is essential for enhancing their performance, improving their stability, and making them commercially viable for large-scale deployment in solar energy harvesting applications. Point defects, like vacancies, have a dual role, as they can inherently provide a proper doping, but they can also reduce the collected current by trap-assisted recombination. Moreover, they can play an active role in ion migration. Using {\it ab initio} density functional theory (DFT) calculations we investigate the changes in the band alignment induced by interfacial vacancy defects in a TiO$_2$/MAPI/Cu$_2$O based PSC. Depending on the type of the vacancy (Ti, Cu, O, Pb, I) in the oxide and perovskite materials, additional doping is superimposed on the already existing background. Their effect on the performance of the PSCs becomes visible, as shown by SCAPS simulations. The most significant impact is observed for $p$ type doping of TiO$_2$ and $n$ type doping of Cu$_2$O, while the effective doping of the perovskite layer affects one of the two interfaces. We discuss these results based on modification of the band structure near the active interfaces and provide further insights concerning the optimization of electron and hole collection.
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Submitted 27 June, 2024;
originally announced June 2024.
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Electron transporting bilayers for perovskite solar cells: spray coating deposition of c-TiO2/m-SnO2-quantum dots
Authors:
Anca G. Mirea,
Ioana D. Vlaicu,
Sarah Derbali,
Florentina Neatu,
Andrei G. Tomulescu,
Cristina Besleaga,
Monica Enculescu,
Andrei C. Kuncser,
Alexandra C. Iacoban,
Nicolae Filipoiu,
Marina Cuzminschi,
George A. Nemnes,
Andrei Manolescu,
Mihaela Florea,
Ioana Pintilie
Abstract:
Herein we present a comparative study among different mesoporous electron transporter layers (ETLs), namely nanometric m-TiO2, m-SnO2 and m-SnO2 quantum dots (QDs), deposited by spray coating method. The experimental data correlated with the photovoltaic parameters indicate that the SnO2 mesoporous layer obtained from the spray deposition of the in-house prepared QDs solution is the best candidate…
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Herein we present a comparative study among different mesoporous electron transporter layers (ETLs), namely nanometric m-TiO2, m-SnO2 and m-SnO2 quantum dots (QDs), deposited by spray coating method. The experimental data correlated with the photovoltaic parameters indicate that the SnO2 mesoporous layer obtained from the spray deposition of the in-house prepared QDs solution is the best candidate between the three used mesoporous ETLs. The use of the in-house prepared SnO2 QDs solution presents smaller agglomerates composed of 3 nm NPs resulting in the formation of a thinner, more uniform, and compact mesoporous ETL, compared with the other two ETL solutions. The formamidinium-methylamonium-potassium (FAMA@10K) perovskite deposited on this m-SnO2 QDs ETL presents a lower RMS, more uniformity and, a higher amount of PbI2. Interestingly, this higher concentration for PbI2 seems to enhance the performance of the perovskite solar cells (PSC), compared to the other two mesoporous ETLs. Our work reveals that SnO2 QDs solution can be easily produced in the laboratory and it is more suited for the deposition of the mesoporous ETL when choosing a FAMA@10K configuration perovskite solar cell with power conversion efficiency (PCE) higher than 10%.
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Submitted 1 July, 2024; v1 submitted 26 June, 2024;
originally announced June 2024.
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OH$^-$ ions can reduce the iodide migration in MAPI
Authors:
R. E. Brophy,
M. Kateb,
I. Ghitiu,
N. Filipoiu,
K. Torfason,
H. G. Svavarsson,
G. A. Nemnes,
I. Pintilie,
A. Manolescu
Abstract:
One of the main degradation mechanisms of methylammonium lead iodine (MAPI), which is an important material for perovskite based solar cells, is the migration of iodide ions. It is believed that this phenomenon is in fact dominated by the diffusion of iodide vacancies. In this paper, we suggest that the addition of a small amount of OH$^-$ ions can help suppress the migration of iodide and increas…
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One of the main degradation mechanisms of methylammonium lead iodine (MAPI), which is an important material for perovskite based solar cells, is the migration of iodide ions. It is believed that this phenomenon is in fact dominated by the diffusion of iodide vacancies. In this paper, we suggest that the addition of a small amount of OH$^-$ ions can help suppress the migration of iodide and increase the overall stability of the material. Through the use of molecular dynamics simulations, we show that the OH$^-$ ions can bind to the positively charged iodide vacancies and can block the access of the negative iodide ions into those vacancies.
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Submitted 6 March, 2024;
originally announced March 2024.
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Effect of pressure on the dynamics of iodine defects in MAPI: An atomistic simulation
Authors:
Rachel Elizabeth Brophy,
Movaffaq Kateb,
Kristinn Torfason,
George Alexandru Nemnes,
Halldor Gudfinnur Svavarsson,
Ioana Pintilie,
Andrei Manolescu
Abstract:
The diffusion of iodine defects has been considered the most important degradation mechanism of methylammonium lead iodine (MAPI) in solar cells. The present study demonstrates the importance of the pressure inside this material on the dynamics of iodine defects, using molecular dynamics simulations. It is known that the diffusion coefficient of an iodine vacancy is an order of magnitude higher th…
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The diffusion of iodine defects has been considered the most important degradation mechanism of methylammonium lead iodine (MAPI) in solar cells. The present study demonstrates the importance of the pressure inside this material on the dynamics of iodine defects, using molecular dynamics simulations. It is known that the diffusion coefficient of an iodine vacancy is an order of magnitude higher than that of interstitial iodine. We show that this difference systematically increases with increased tensile strain and that both diffusion coefficients tend to zero when a compressive strain is applied. This result suggests that compression of the MAPI can be a good solution to reduce its degradation rate. %Also, different methods of determining the diffusion coefficient, including mean squared displacement (MSD) and velocity auto-correlation function, are discussed and applied to the case of ${\rm V}_{\rm I}$. Besides, the statistical aspect of deriving the diffusion coefficient from the mean squared displacement (MSD) is discussed in terms of the initial conditions (positions and velocities) of the atoms and the simulation time, considering different seeds of the pseudo-random number generator used in the simulations performed with the LAMMPS software.
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Submitted 11 February, 2023;
originally announced February 2023.
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Mapping confinement potentials and charge densities of interacting quantum systems using conditional generative adversarial networks
Authors:
Calin-Andrei Pantis-Simut,
Amanda Teodora Preda,
Lucian Ion,
Andrei Manolescu,
George Alexandru Nemnes
Abstract:
Accurate and efficient tools for calculating the ground state properties of interacting quantum systems are essential in the design of nanoelectronic devices. The exact diagonalization method fully accounts for the Coulomb interaction beyond mean field approximations and it is regarded as the gold-standard for few electron systems. However, by increasing the number of instances to be solved, the c…
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Accurate and efficient tools for calculating the ground state properties of interacting quantum systems are essential in the design of nanoelectronic devices. The exact diagonalization method fully accounts for the Coulomb interaction beyond mean field approximations and it is regarded as the gold-standard for few electron systems. However, by increasing the number of instances to be solved, the computational costs become prohibitive and new approaches based on machine learning techniques can provide a significant reduction in computational time and resources, maintaining a reasonable accuracy. Here, we employ {\tt pix2pix}, a general-purpose image-to-image translation method based on conditional generative adversarial network (cGAN), for predicting ground state densities from randomly generated confinement potentials. Other mappings were also investigated, like potentials to non-interacting densities and the translation from non-interacting to interacting densities. The architecture of the cGAN was optimized with respect to the internal parameters of the generator and discriminator. Moreover, the inverse problem of finding the confinement potential given the interacting density can also be approached by the pix2pix mapping, which is an important step in finding near-optimal solutions for confinement potentials.
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Submitted 21 May, 2023; v1 submitted 5 January, 2023;
originally announced January 2023.
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Optoelectronic and stability properties of quasi-2D alkylammonium based perovskites
Authors:
N. Filipoiu,
Anca G. Mirea,
Sarah Derbali,
C. -A. Pantis-Simut,
D. -V. Anghel,
A. Manolescu,
Ioana Pintilie,
Mihaela Florea,
G. A. Nemnes
Abstract:
Electronic and stability properties of quasi-2D alkylammonium perovskites are investigated using density functional theory (DFT) calculations and validated experimentally on selected classes of compounds. Our analysis is focused on perovskite structures of formula (A)$_2$(A$'$)$_{n-1}$Pb$_n$X$_{3n+1}$, with large cations A = butyl-, pentyl-, hexylammonium (BA, PA, HXA), small cations A$'$ = methyl…
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Electronic and stability properties of quasi-2D alkylammonium perovskites are investigated using density functional theory (DFT) calculations and validated experimentally on selected classes of compounds. Our analysis is focused on perovskite structures of formula (A)$_2$(A$'$)$_{n-1}$Pb$_n$X$_{3n+1}$, with large cations A = butyl-, pentyl-, hexylammonium (BA, PA, HXA), small cations A$'$ = methylammonium, formamidinium, ethylammonium, guanidinium (MA,FA,EA,GA) and halogens X = I, Br, Cl. The role of the halogen ions is outlined for the band structure, stability and defect formation energies. Two opposing trends are found for the absorption efficiency versus stability, the latter being assessed with respect to possible degradation mechanisms. Experimental validation is performed on quasi-2D perovskites based on pentylammonium cations, namely: (PA)$_2$PbX$_4$ and (PA)$_2$(MA)Pb$_2$X$_7$, synthesized by antisolvent-assisted vapor crystallization. Structural and optical analysis are inline with the DFT based calculations. In addition, the thermogravimetric analysis shows an enhanced stability of bromide and chloride based compounds, in agreement with the theoretical predictions.
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Submitted 10 October, 2022;
originally announced October 2022.
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Capacitive and inductive effects in perovskite solar cells: the different roles of ionic current and ionic charge accumulation
Authors:
Nicolae Filipoiu,
Amanda Teodora Preda,
Dragos Victor Anghel,
Roxana Patru,
Rachel Elizabeth Brophy,
Movaffaq Kateb,
Cristina Besleaga,
Andrei Gabriel Tomulescu,
Ioana Pintilie,
Andrei Manolescu,
George Alexandru Nemnes
Abstract:
Dynamic hysteresis effects have been long known to occur in the J-V characteristics of perovskite solar cells (PSCs), with the ionic migration being identified as the primary factor. The hysteretic effects impacted early studies by the uncertainty in the evaluation of the power conversion efficiency, while currently, potential links to degradation mechanisms are in the focus. Therefore, understand…
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Dynamic hysteresis effects have been long known to occur in the J-V characteristics of perovskite solar cells (PSCs), with the ionic migration being identified as the primary factor. The hysteretic effects impacted early studies by the uncertainty in the evaluation of the power conversion efficiency, while currently, potential links to degradation mechanisms are in the focus. Therefore, understanding ion migration is a central goal, typically addressed by performing a combined large- and small signal analysis. The reported large capacitive and inductive effects created controversies with respect to the underlying mechanisms, yielding essentially two classes of models, one based on large accumulation capacitances and the other based on ionic modulation of the collected current. We introduce here an equivalent circuit model and interpret these phenomena in terms of recombination current modulation, identifying the distinct contributions from ion current and ionic charge accumulations. These contributions to the recombination current are associated with capacitive and inductive effects, respectively, and we corroborate the numerical simulations with electrochemical impedance spectroscopy (EIS) measurements. These show the role of the recombination currents of photogenerated carriers in producing both capacitive and inductive effects as the illumination is varied. Moreover, we provide a bridging point between the two classes of models and suggest a framework of investigation of defect states based on the observed inductive behavior, which would further aid the mitigation of the degradation effects.
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Submitted 30 November, 2022; v1 submitted 22 August, 2022;
originally announced August 2022.
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Structure and electrical behavior of silicon nanowires prepared by MACE process
Authors:
R. Plugaru,
E. Fakhri,
C. Romanitan,
I. Mihalache,
G. Craciun,
N. Plugaru,
H. Ö. Árnason,
M. T. Sultan,
G. A. Nemnes,
S. Ingvarsson,
H. G. Svavarsson,
A. Manolescu
Abstract:
We report on the structure and electrical characteristics of silicon nanowire arrays prepared by metal assisted chemical etching (MACE) method, investigated by cross-sectional scanning electron microscopy (SEM) and high resolution X-ray diffraction (HR-XRD) methods. SEM micrographs show arrays of merged parallel nanowires, with lengths of 700 nm and 1000 nm, resulted after 1.5 min and 5 min etchin…
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We report on the structure and electrical characteristics of silicon nanowire arrays prepared by metal assisted chemical etching (MACE) method, investigated by cross-sectional scanning electron microscopy (SEM) and high resolution X-ray diffraction (HR-XRD) methods. SEM micrographs show arrays of merged parallel nanowires, with lengths of 700 nm and 1000 nm, resulted after 1.5 min and 5 min etching time, respectively. X-ray reciprocal space maps (RSMs) around Si (004) reciprocal lattice point indicate the presence of 0D structural defects rather than of extended defects. The photoluminescence spectra exhibit emission bands at 1.70 eV and 1.61 eV, with intensity significantly higher in the case of longer wires and associated with the more defected surface. The transient photoluminescence spectroscopy reveals average lifetime of 60 $μ$s and 111 $μ$s for the two SiNW arrays, which correlate with a larger density of defects states in the latest case. The I-V characteristics of the nanowires, show a memristive behavior with the applied voltage sweep rate in the range 5V/s - 0.32V/s. We attribute this behavior to trap states which control the carrier concentration, and model this effect using an equivalent circuit. Photogeneration processes under excitation wavelengths in visible domain, 405 nm - 650 nm, and under light intensity in the range 20 - 100 mW/cm$^2$ provided a further insight into the trap states.
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Submitted 10 June, 2022;
originally announced June 2022.
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Investigation of bi-particle states in gate-array-controlled quantum-dot systems aided by machine learning techniques
Authors:
G. A. Nemnes,
T. L. Mitran,
A. T. Preda,
I. Ghiu,
M. Marciu,
A. Manolescu
Abstract:
Quantum computing architectures require an accurate and efficient description in terms of many-electron states. Recent implementations include quantum dot arrays, where the ground state of a multi q-bit system can be altered by voltages applied to the top gates. An extensive investigation concerning the spectra of the many-electron systems under multiple operation conditions set by external voltag…
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Quantum computing architectures require an accurate and efficient description in terms of many-electron states. Recent implementations include quantum dot arrays, where the ground state of a multi q-bit system can be altered by voltages applied to the top gates. An extensive investigation concerning the spectra of the many-electron systems under multiple operation conditions set by external voltages typically requires a relatively large number of Hamiltonian diagonalizations, where the Coulomb interaction is considered in an exact manner. Instead of making exhaustive calculations using high throughput computing, we approach this problem by augmenting numerical diagonalizations with machine learning techniques designed to predict the many-electron eigenvalues and eigenfunctions. To this end, we employ and compare the results from linear regression methods such as multivariate least squares (MLS) as well as non-linear techniques based on kernel ridge regression (KRR), Gaussian process regression (GPR) and artificial neural networks (ANNs). The input feature vectors are assembled from readily available information comprised from a binary representation of the potential and the strength of the Coulomb interaction. Furthermore, employing a linear classifier, we establish a rule for detecting a singlet-triplet transition which may arise for certain potential configurations.
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Submitted 27 March, 2022;
originally announced March 2022.
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A ballistic transport model for an artificial neuron
Authors:
George Alexandru Nemnes,
Daniela Dragoman
Abstract:
We introduce a model for an artificial neuron which is based on ballistic transport in a multi-terminal device. Unlike standard configurations, the proposed design embeds the synaptic weights into the active region, thus significantly reducing the complexity of the input terminals. This is achieved by defining the basic elements of the ballistic artificial neuron as follows: the input values are s…
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We introduce a model for an artificial neuron which is based on ballistic transport in a multi-terminal device. Unlike standard configurations, the proposed design embeds the synaptic weights into the active region, thus significantly reducing the complexity of the input terminals. This is achieved by defining the basic elements of the ballistic artificial neuron as follows: the input values are set by the incoming wavefunctions amplitudes, while the weights correspond to the scattering matrix elements. Furthermore, the output value of the activation function of the artificial neuron is given by the transmission function. By tuning the gate voltage, the scattering potential and, consequently, the weights are changed so that the value of the transmission function gets closer to the target output, which is essential in the training process of artificial neural networks. Thus, we provide here the modus operandi of a ballistic artificial neuron.
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Submitted 19 December, 2019;
originally announced December 2019.
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Graphene bandgap induced by ferroelectric Pca2$_1$ HfO$_2$ substrate: a first-principles study
Authors:
George Alexandru Nemnes,
Daniela Dragoman,
Mircea Dragoman
Abstract:
The electronic properties of graphene on top of ferroelectric HfO$_2$ substrates in orthorhombic phase with space group Pca2$_1$ are investigated using density functional theory calculations. The space group Pca2$_1$ was recently identified as one of the two potential candidates for ferroelectricity in hafnia, with the polarization direction oriented along [001] direction. Our results indicate the…
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The electronic properties of graphene on top of ferroelectric HfO$_2$ substrates in orthorhombic phase with space group Pca2$_1$ are investigated using density functional theory calculations. The space group Pca2$_1$ was recently identified as one of the two potential candidates for ferroelectricity in hafnia, with the polarization direction oriented along [001] direction. Our results indicate the appearance of sizable energy gaps in graphene induced by the HfO$_2$ substrate, as a consequence of orbital hybridization and locally deformed graphene structure. The gap sizes depend on the type of the HfO$_2$ terminations interacting with graphene, showing larger gaps for oxygen terminated slabs compared to hafnium terminated ones. These observations may prove to be highly significant for the development of graphene based field effect transistors using high-k dielectrics.
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Submitted 23 March, 2019;
originally announced March 2019.
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Reconfigurable quantum logic gates using Rashba controlled spin polarized currents
Authors:
George Alexandru Nemnes,
Daniela Dragoman
Abstract:
A reconfigurable logic gate is proposed in a two-dimensional double quantum wire system with a coupling window enabled by a Rashba field. Manipulating the spin states of incoming electrons several quantum logic gates (OR, AND, XOR, CNOT) can be implemented. The logic gate functionality can be switched by tuning the Rashba parameter only. In this context, we investigate suitable configurations of t…
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A reconfigurable logic gate is proposed in a two-dimensional double quantum wire system with a coupling window enabled by a Rashba field. Manipulating the spin states of incoming electrons several quantum logic gates (OR, AND, XOR, CNOT) can be implemented. The logic gate functionality can be switched by tuning the Rashba parameter only. In this context, we investigate suitable configurations of the device region by embedding a quantum point contact located in the coupling region to obtain all four logic gates. The ballistic spin polarized transmission functions are calculated using an effective mass scattering formalism in the framework of a multi-channel, multi-terminal system. Owing its versatility, the proposed logic gate can be integrated in programmable architectures, able to implement both classical and quantum algorithms.
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Submitted 15 December, 2018;
originally announced December 2018.
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Gap prediction in hybrid graphene - hexagonal boron nitride nanoflakes using artificial neural networks
Authors:
G. A. Nemnes,
T. L. Mitran,
A. Manolescu
Abstract:
The electronic properties graphene nanoflakes (GNFs) with embedded hexagonal boron nitride (hBN) domains are investigated by combined {\it ab initio} density functional theory calculations and machine learning techniques. The energy gaps of the quasi-0D graphene based systems, defined as the differences between LUMO and HOMO energies, depend on the sizes of the hBN domains relative to the size of…
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The electronic properties graphene nanoflakes (GNFs) with embedded hexagonal boron nitride (hBN) domains are investigated by combined {\it ab initio} density functional theory calculations and machine learning techniques. The energy gaps of the quasi-0D graphene based systems, defined as the differences between LUMO and HOMO energies, depend on the sizes of the hBN domains relative to the size of the pristine graphene nanoflake, but also on the position of the hBN domain. The range of the energy gaps for different configurations is increasing as the hBN domains get larger. We develop two artificial neural network (ANN) models able to reproduce the gap energies with high accuracies and investigate the tunability of the energy gap, by considering a set of GNFs with embedded rectangular hBN domains. In one ANN model, the input is in one-to-one correspondence with the atoms in the GNF, while in the second model the inputs account for basic structures in the GNF, allowing potential use in up-scaled structures. We perform a statistical analysis over different configurations of ANNs to optimize the network structure. The trained ANNs provide a correlation between the atomic system configuration and the magnitude of the energy gaps, which may be regarded as an efficient tool for optimizing the design of nanostructured graphene based materials for specific electronic properties.
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Submitted 11 December, 2018;
originally announced December 2018.
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The hysteresis-free behavior of perovskite solar cells from the perspective of the measurement conditions
Authors:
George Alexandru Nemnes,
Cristina Besleaga,
Andrei Gabriel Tomulescu,
Lucia Nicoleta Leonat,
Viorica Stancu,
Mihaela Florea,
Andrei Manolescu,
Ioana Pintilie
Abstract:
We investigate in how far the hysteresis-free behavior of perovskite solar cells can be reproduced using particular pre-conditioning and measurement conditions. As there are currently more and more reports of perovskite solar cells without J-V hysteresis it is crucial to distinguish between genuine performance improvements and measurement artifacts. We focus on two of the parameters that influence…
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We investigate in how far the hysteresis-free behavior of perovskite solar cells can be reproduced using particular pre-conditioning and measurement conditions. As there are currently more and more reports of perovskite solar cells without J-V hysteresis it is crucial to distinguish between genuine performance improvements and measurement artifacts. We focus on two of the parameters that influence the dynamic J-V scans, namely the bias scan rate and and the bias poling voltage, and point out measurement conditions for achieving a hysteresis-free behavior. In this context we discuss the suitability of defining a hysteresis index (HI) for the characterization of dynamic J-V scans. Using HI, aging effects are also investigated, establishing a potential connection between the sample degradation and the variation of the maximal hysteresis on one hand, and relaxation time scale of the slow process, on the other hand. Pre-poling induced recombinations effects are identified. In addition, our analysis based on sample pre-biasing reveals potential indication regarding two types of slow processes, with two different relaxation time scales, which provides further insight regarding ionic migration.
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Submitted 21 February, 2019; v1 submitted 10 December, 2018;
originally announced December 2018.
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Electric field effect in boron and nitrogen doped graphene bilayers
Authors:
G. A. Nemnes,
T. L. Mitran,
A. Manolescu,
Daniela Dragoman
Abstract:
Unlike single layer graphene, in the case of $AB$-stacked bilayer graphene (BLG) one can induce a non-zero energy gap by breaking the inversion symmetry between the two layers using a perpendicular electric field. This is an essential requirement in field-effect applications, particularly since the induced gap in BLG systems can be further tuned by the magnitude of the external electric field. Dop…
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Unlike single layer graphene, in the case of $AB$-stacked bilayer graphene (BLG) one can induce a non-zero energy gap by breaking the inversion symmetry between the two layers using a perpendicular electric field. This is an essential requirement in field-effect applications, particularly since the induced gap in BLG systems can be further tuned by the magnitude of the external electric field. Doping is another way to modify the electronic properties of graphene based systems. We investigate here BLG systems doped with boron and nitrogen in the presence of external electric field, in the framework of density functional theory (DFT) calculations. Highly doped BLG systems are known to behave as degenerate semiconductors, where the Fermi energy depends on the doping concentration but, in addition, we show that the electronic properties drastically depend also on the applied electric field. By changing the magnitude and the orientation of the electric field, the gap size and position relative to the Fermi level may be tuned, essentially controlling the effect of the extrinsic doping. In this context, we discuss in how far the external electric field may suitably adjust the effective doping and, implicitly, the conduction properties of doped BLG systems.
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Submitted 3 September, 2018;
originally announced September 2018.
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How measurement protocols influence the dynamic J-V characteristics of perovskite solar cells: theory and experiment
Authors:
G. A. Nemnes,
Cristina Besleaga,
A. G. Tomulescu,
Alexandra Palici,
L. Pintilie,
A. Manolescu,
Ioana Pintilie
Abstract:
The dynamic effects observed in the J-V measurements represent one important hallmark in the behavior of the perovskite solar cells. Proper measurement protocols (MPs) should be employed for the experimental data reproducibility, in particular for a reliable evaluation of the power conversion efficiency (PCE), as well as for a meaningful characterization of the type and magnitude of the hysteresis…
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The dynamic effects observed in the J-V measurements represent one important hallmark in the behavior of the perovskite solar cells. Proper measurement protocols (MPs) should be employed for the experimental data reproducibility, in particular for a reliable evaluation of the power conversion efficiency (PCE), as well as for a meaningful characterization of the type and magnitude of the hysteresis. We discuss here several MPs by comparing the experimental J-V characteristics with simulated ones using the dynamic electrical model (DEM). Pre-poling conditions and bias scan rate can have a dramatic influence not only on the apparent solar cell performance, but also on the hysteretic phenomena. Under certain measurement conditions, a hysteresis-free behavior with relatively high PCEs may be observed, although the J-V characteristics may be far away from the stationary case. Furthermore, forward-reverse and reverse-forward bias scans show qualitatively different behaviors regarding the type of the hysteresis, normal and inverted, depending on the bias pre-poling. We emphasize here that correlated forward-reverse or reverse-forward bias scans are essential for a correct assessment of the dynamic hysteresis. In this context, we define a hysteresis index which consistently assigns the hysteresis type and magnitude. Our DEM simulations, supported by experimental data, provide further guidance for an efficient and accurate determination of the stationary J-V characteristics, showing that the type and magnitude of the dynamic hysteresis may be affected by unintentional pre-conditioning in typical experiments.
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Submitted 2 September, 2018; v1 submitted 1 March, 2018;
originally announced March 2018.
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Reversal of thermoelectric current in tubular nanowires
Authors:
Sigurdur Ingi Erlingsson,
Andrei Manolescu,
George Alexandru Nemnes,
Jens H. Bardarson,
David Sanchez
Abstract:
We calculate the charge current generated by a temperature bias between the two ends of a tubular nanowire. We show that in the presence of a transversal magnetic field the current can change sign, i.e., electrons can either flow from the hot to the cold reservoir, or in the opposite direction, when the temperature bias increases. This behavior occurs when the magnetic field is sufficiently strong…
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We calculate the charge current generated by a temperature bias between the two ends of a tubular nanowire. We show that in the presence of a transversal magnetic field the current can change sign, i.e., electrons can either flow from the hot to the cold reservoir, or in the opposite direction, when the temperature bias increases. This behavior occurs when the magnetic field is sufficiently strong, such that Landau and snaking states are created, and the energy dispersion is non-monotonic with respect to the longitudinal wave vector. The sign reversal can survive in the presence of impurities. We predict this result for core/shell nanowires, for uniform nanowires with surface states due to the Fermi level pinning, and for topological insulator nanowires.
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Submitted 22 July, 2017; v1 submitted 3 May, 2017;
originally announced May 2017.
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Normal and inverted hysteresis in perovskite solar cells
Authors:
George Alexandru Nemnes,
Cristina Besleaga,
Viorica Stancu,
Lucia Nicoleta Leonat,
Lucian Pintilie,
Kristinn Torfason,
Marjan Ilkov,
Andrei Manolescu,
Ioana Pintilie
Abstract:
Hysteretic effects are investigated in perovskite solar cells in the standard FTO/TiO$_2$/CH$_3$NH$_3$PbI$_{3-x}$Cl$_x$/spiro-OMeTAD/Au configuration. We report normal (NH) and inverted hysteresis (IH) in the J-V characteristics occurring for the same device structure, the behavior strictly depending on the pre-poling bias. NH typically appears at pre-poling biases larger than the open circuit bia…
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Hysteretic effects are investigated in perovskite solar cells in the standard FTO/TiO$_2$/CH$_3$NH$_3$PbI$_{3-x}$Cl$_x$/spiro-OMeTAD/Au configuration. We report normal (NH) and inverted hysteresis (IH) in the J-V characteristics occurring for the same device structure, the behavior strictly depending on the pre-poling bias. NH typically appears at pre-poling biases larger than the open circuit bias, while pronounced IH occurs for negative bias pre-poling. The transition from NH to IH is marked by a intermediate mixed hysteresis behavior characterized by a crossing point in the J-V characteristics. The measured J-V characteristics are explained quantitatively by the dynamic electrical model (DEM). Furthermore, the influence of the bias scan rate on the NH/IH hysteresis is discussed based on the time evolution of the non-linear polarization. Introducing a three step measurement protocol, which includes stabilization, pre-poling and measurement, we put forward the difficulties and possible solutions for a correct PCE evaluation.
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Submitted 25 March, 2017;
originally announced April 2017.
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Electronic and thermal conduction properties of halogenated porous graphene nanoribbons
Authors:
George Alexandru Nemnes,
Camelia Visan,
Andrei Manolescu
Abstract:
In the framework of density functional theory (DFT) calculations we investigate the electronic and thermal properties of porous graphene (PG) structures passivated with halogen atoms as possible candidates for efficient thermoelectric devices. Armchair and zig-zag halogenated PG nanoribbons are analyzed comparatively. The electronic properties are consistent with the expected behavior for the two…
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In the framework of density functional theory (DFT) calculations we investigate the electronic and thermal properties of porous graphene (PG) structures passivated with halogen atoms as possible candidates for efficient thermoelectric devices. Armchair and zig-zag halogenated PG nanoribbons are analyzed comparatively. The electronic properties are consistent with the expected behavior for the two types of terminations, however with marked influences introduced by the different halogen atoms. Depending on the pore sizes and halogen type pseudo-gaps in the phononic band structure are visible in the low frequency range, which are particularly important for the thermal conduction at low temperatures. The gaps are systematically displaced towards lower energies as the atomic number of the halogen increases. At the same time, the electronic gap decreases, which is also essential for attaining a large figure of merit in a thermoelectric device. This indicates the possibility of tuning both electronic and thermal properties of PG structures by halogen passivation.
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Submitted 23 December, 2016;
originally announced December 2016.
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Molecular dynamics of halogenated graphene - hexagonal boron nitride nanoribbons
Authors:
George Alexandru Nemnes,
Camelia Visan,
Dragos Victor Anghel,
Andrei Manolescu
Abstract:
The hybrid graphene - hexagonal boron nitride (G-hBN) systems offer new routes in the design of nanoscale electronic devices. Using {\it ab initio} density functional theory calculations we investigate the dynamics of zig-zag nanoribbons a few interatomic distances wide. Several structures are analyzed, namely pristine graphene, hBN and G-hBN systems. By passivating the nanoribbon edges with hydro…
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The hybrid graphene - hexagonal boron nitride (G-hBN) systems offer new routes in the design of nanoscale electronic devices. Using {\it ab initio} density functional theory calculations we investigate the dynamics of zig-zag nanoribbons a few interatomic distances wide. Several structures are analyzed, namely pristine graphene, hBN and G-hBN systems. By passivating the nanoribbon edges with hydrogen and different halogen atoms, one may tune the electronic and mechanical properties, like the band gap energies and the natural frequencies of vibration.
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Submitted 2 June, 2016;
originally announced June 2016.
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Dynamic electrical behavior of halide perovskite based solar cells
Authors:
George Alexandru Nemnes,
Cristina Besleaga,
Andrei Gabriel Tomulescu,
Ioana Pintilie,
Lucian Pintilie,
Kristinn Torfason,
Andrei Manolescu
Abstract:
A dynamic electrical model is introduced to investigate the hysteretic effects in the I-V characteristics of perovskite based solar cells. By making a simple ansatz for the polarization relaxation, our model is able to reproduce qualitatively and quantitatively detailed features of measured I-V characteristics. Pre-poling effects are discussed, pointing out the differences between initially over-…
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A dynamic electrical model is introduced to investigate the hysteretic effects in the I-V characteristics of perovskite based solar cells. By making a simple ansatz for the polarization relaxation, our model is able to reproduce qualitatively and quantitatively detailed features of measured I-V characteristics. Pre-poling effects are discussed, pointing out the differences between initially over- and under-polarized samples. In particular, the presence of the current over-shoot observed in the reverse characteristics is correlated with the solar cell pre-conditioning. Furthermore, the dynamic hysteresis is analyzed with respect to changing the bias scan rate, the obtained results being consistent with experimentally reported data: the hysteresis amplitude is maximum at intermediate scan rates, while at very slow and very fast ones it becomes negligible. The effects induced by different relaxation time scales are assessed. The proposed dynamic electrical model offers a comprehensive view of the solar cell operation, being a practical tool for future calibration of tentative microscopic descriptions.
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Submitted 15 September, 2016; v1 submitted 1 June, 2016;
originally announced June 2016.
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The role of the chemical potential in the BCS theory
Authors:
Dragos-Victor Anghel,
George Alexandru Nemnes
Abstract:
We study the effect of the chemical potential on the results of the BCS theory of superconductivity. We assume that the pairing interaction is manifested between electrons of single-particle energies in an interval $[μ- \hbarω_c, μ+ \hbarω_c]$, where $μ$ and $ω_c$ are parameters of the model--$μ$ needs not be equal to the chemical potential of the system, denoted here by $μ_R$. The BCS results are…
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We study the effect of the chemical potential on the results of the BCS theory of superconductivity. We assume that the pairing interaction is manifested between electrons of single-particle energies in an interval $[μ- \hbarω_c, μ+ \hbarω_c]$, where $μ$ and $ω_c$ are parameters of the model--$μ$ needs not be equal to the chemical potential of the system, denoted here by $μ_R$. The BCS results are recovered if $μ= μ_R$. If $μ\ne μ_R$ the physical properties change significantly: the energy gap $Δ$ is smaller than the BCS gap, a population imbalance appears, and the superconductor-normal metal phase transition is of the first order. The quasiparticle imbalance is an equilibrium property that appears due to the asymmetry with respect to $μ_R$ of the single-particle energy interval in which the pairing potential is manifested.
For $μ_R - μ$ taking values in some ranges, the equation for $Δ$ may have more than one solution at the same temperature, forming branches of solutions when $Δ$ is plotted vs $μ_R-μ$ at fixed $T$. The solution with the highest energy gap, which corresponds to the BCS solution when $μ= μ_R$, cease to exist if $|μ-μ_R| \ge 2Δ_0$ ($Δ_0$ is the BCS gap at zero temperature). Therefore the superconductivity is conditioned by the existence of the pairing interaction and also by the value of $μ_R - μ$.
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Submitted 18 July, 2016; v1 submitted 26 April, 2016;
originally announced April 2016.
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Conductance oscillations of core-shell nanowires in transversal magnetic fields
Authors:
Andrei Manolescu,
George Alexandru Nemnes,
Anna Sitek,
Tomas Orn Rosdahl,
Sigurdur Ingi Erlingsson,
Vidar Gudmundsson
Abstract:
We analyze theoretically electronic transport through a core-shell nanowire in the presence of a transversal magnetic field. We calculate the conductance for a variable coupling between the nanowire and the attached leads and show how the snaking states, which are low-energy states localized along the lines of vanishing radial component of the magnetic field, manifest their existence. In the stron…
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We analyze theoretically electronic transport through a core-shell nanowire in the presence of a transversal magnetic field. We calculate the conductance for a variable coupling between the nanowire and the attached leads and show how the snaking states, which are low-energy states localized along the lines of vanishing radial component of the magnetic field, manifest their existence. In the strong coupling regime they induce Aharonov-Bohm-like conductance oscillations, which, by decreasing the coupling to the leads, evolve into well resolved peaks. These results show that the formation of snaking states in the nanowire affects magnetoconductance measurements irrespective of the strength of the contacts with the leads. We analyze theoretically electronic transport through a core-shell nanowire in the presence of a transversal magnetic field. We calculate the conductance for a variable coupling between the nanowire and the attached leads and show how the snaking states, which are low-energy states localized along the lines of vanishing radial component of the magnetic field, manifest their existence. In the strong coupling regime they induce Aharonov-Bohm-like conductance oscillations, which, by decreasing the coupling to the leads, evolve into well resolved peaks. The flux periodic oscillations arise due to interference of the snaking states, which is a consequence of backscattering at either the contacts with leads or magnetic/potential barriers in the wire.
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Submitted 3 May, 2016; v1 submitted 7 January, 2016;
originally announced January 2016.
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The application of the fractional exclusion statistics to the BCS theory--a redefinition of the quasiparticle energies
Authors:
Dragos-Victor Anghel,
George Alexandru Nemnes
Abstract:
The effective energy of a superconductor $E_{eff}(T)$ at temperature $T$ is defined as the difference between the total energy at temperature $T$ and the total energy at 0~K. We call the energy of the condensate, ${\mathcal E}_c$, the difference between $E_{eff}$ and the sum of the quasiparticle energies $E_{qp}$. ${\mathcal E}_c$, $E_{qp}$, as well as the BCS quasiparticle energy $ε$ are positive…
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The effective energy of a superconductor $E_{eff}(T)$ at temperature $T$ is defined as the difference between the total energy at temperature $T$ and the total energy at 0~K. We call the energy of the condensate, ${\mathcal E}_c$, the difference between $E_{eff}$ and the sum of the quasiparticle energies $E_{qp}$. ${\mathcal E}_c$, $E_{qp}$, as well as the BCS quasiparticle energy $ε$ are positive and depend on the gap energy $Δ$, which, in turn, depends on the populations of the quasiparticle states (equivalently, they depend on $T$). So from the energy point of view the superconductor is a Fermi liquid of non-ideal quasiparticles.
We show that the choice of quasiparticles is not unique, but there is an infinite range of possibilities. Some of these possibilities have been explored in the context of the fractional exclusion statistics (FES), which is a general method of describing interacting particle systems as ideal gases. We apply FES here and transform the Fermi liquid of BCS excitations into an ideal gas by redefining the quasiparticle energies. The new FES quasiparticles exhibit the same energy gap as the BCS quasiparticles, but a different DOS, which is finite at any quasiparticle energy.
We also discuss the effect of the remnant electron-electron interaction (electron-electron interaction beyond the BCS pairing model) and show that this can stabilize the BCS condensate, increasing the critical temperature.
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Submitted 29 December, 2015;
originally announced December 2015.
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Ballistic electron transport in wrinkled superlattices
Authors:
T. L. Mitran,
G. A. Nemnes,
L. Ion,
Daniela Dragoman
Abstract:
Inspired by the problem of elastic wave scattering on wrinkled interfaces, we studied the scattering of ballistic electrons on a wrinkled potential energy region. The electron transmission coefficient depends on both wrinkle amplitude and periodicity, having different behaviors for positive and negative scattering potential energies. For scattering on potential barriers, minibands appear in electr…
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Inspired by the problem of elastic wave scattering on wrinkled interfaces, we studied the scattering of ballistic electrons on a wrinkled potential energy region. The electron transmission coefficient depends on both wrinkle amplitude and periodicity, having different behaviors for positive and negative scattering potential energies. For scattering on potential barriers, minibands appear in electron transmission, as in superlattices, whereas for scattering on periodic potential wells the transmission coefficient has a more complex form. Besides suggesting that tuning of electron transmission is possible by modifying the scattering potential via voltages on wrinkled gate electrodes, our results emphasize the analogies between ballistic electrons and elastic waves even in scattering problems on non-typical configurations.
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Submitted 30 July, 2015;
originally announced July 2015.
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Transparent boundary conditions for time-dependent electron transport in the R-matrix method with applications to nanostructured interfaces
Authors:
G. A. Nemnes,
Alexandra Palici,
A. Manolescu
Abstract:
Transparent boundary conditions for the time-dependent Schrodinger equation are implemented using the R-matrix method. The employed scattering formalism is suitable for describing open quantum systems and provides the framework for the time-dependent coherent transport. Transmission and reflection of wave functions at the edges of a finite quantum system are essential for an accurate and efficient…
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Transparent boundary conditions for the time-dependent Schrodinger equation are implemented using the R-matrix method. The employed scattering formalism is suitable for describing open quantum systems and provides the framework for the time-dependent coherent transport. Transmission and reflection of wave functions at the edges of a finite quantum system are essential for an accurate and efficient description of the time-dependent processes on large time scales. The approach is used here to describe time-dependent transport across nanostructured interfaces relevant for photovoltaic applications.
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Submitted 17 September, 2016; v1 submitted 9 June, 2015;
originally announced June 2015.
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Ab initio investigation of optical properties in triangular graphene - boron nitride core-shell nanostructures
Authors:
Andreea A. Nila,
George Alexandru Nemnes,
Andrei Manolescu
Abstract:
We calculate the optical properties of atomic-sized core-shell graphene - boron nitride nanoflakes with triangular shaped crossection using the density functional theory. The optical properties can be tuned by using different sizes and proportions of the core-shell materials. Anisotropic effects manifested in the absorption of unpolarized light with different orientations of the optical vector are…
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We calculate the optical properties of atomic-sized core-shell graphene - boron nitride nanoflakes with triangular shaped crossection using the density functional theory. The optical properties can be tuned by using different sizes and proportions of the core-shell materials. Anisotropic effects manifested in the absorption of unpolarized light with different orientations of the optical vector are pointed out.
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Submitted 23 December, 2014; v1 submitted 21 November, 2014;
originally announced November 2014.
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Thermoelectric effects in nanostructured quantum wires in the non-linear temperature regime
Authors:
Anda Elena Stanciu,
George Alexandru Nemnes,
Andrei Manolescu
Abstract:
The thermoelectric voltage of a quantum dot connected to leads is calculated using the scattering R-matrix method. Our approach takes into account a temperature gradient between the contacts beyond the linear regime. We obtain sign changes of the thermopower when varying the temperature or the chemical potential around the resonances. The influence of the coupling strength of the contacts and of t…
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The thermoelectric voltage of a quantum dot connected to leads is calculated using the scattering R-matrix method. Our approach takes into account a temperature gradient between the contacts beyond the linear regime. We obtain sign changes of the thermopower when varying the temperature or the chemical potential around the resonances. The influence of the coupling strength of the contacts and of the thermoelectric field on the thermoelectric voltage is discussed.
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Submitted 23 December, 2014; v1 submitted 21 November, 2014;
originally announced November 2014.
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The BCS theory amended
Authors:
Dragos-Victor Anghel,
George Alexandru Nemnes
Abstract:
In the standard theory of superconductivity a quasiparticle excitation changes the energy of the system by the quasiparticle energy. But the number of excitations determine also the gap energy which further determines the energy of the condensate and the energy spectrum of quasiparticles. Such extra contributions to the total energy of the system--which are not taken into account in the standard f…
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In the standard theory of superconductivity a quasiparticle excitation changes the energy of the system by the quasiparticle energy. But the number of excitations determine also the gap energy which further determines the energy of the condensate and the energy spectrum of quasiparticles. Such extra contributions to the total energy of the system--which are not taken into account in the standard formalism--led us to a redefinition of the quasiparticle energies and of the quasiparticle populations by the usual method of the maximization of the superconductor partition function. The result of this correction is a critical temperature which is lower than the BCS critical temperature and a finite jump of the energy gap at the phase transition. The discontinuity of the energy gap at the critical temperature marks a first order phase transition which is also in disagreement with the standard BCS interpretation. The fact that the standard BCS formalism is theoretically inconsistent is revealed in the calculation of the heat capacity and of the internal energy. These inconsistencies are removed in our formulation.
The purpose of our paper is not to adjust the theory to better describe the phenomenology of superconductivity, but to reevaluate and amend the BCS formalism.
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Submitted 17 May, 2014; v1 submitted 4 March, 2014;
originally announced March 2014.
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Equivalence between fractional exclusion statistics and self-consistent mean-field theory in interacting particle systems in any number of dimensions
Authors:
Dragos-Victor Anghel,
George Alexandru Nemnes,
Francesca Gulminelly
Abstract:
We describe a mean field interacting particle system in any number of dimensions and in a generic external potential as an ideal gas with fractional exclusion statistics (FES). We define the FES quasiparticle energies, we calculate the FES parameters of the system and we deduce the equations for the equilibrium particle populations. The FES gas is "ideal", in the sense that the quasiparticle energ…
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We describe a mean field interacting particle system in any number of dimensions and in a generic external potential as an ideal gas with fractional exclusion statistics (FES). We define the FES quasiparticle energies, we calculate the FES parameters of the system and we deduce the equations for the equilibrium particle populations. The FES gas is "ideal", in the sense that the quasiparticle energies do not depend on the other quasiparticle levels populations and the sum of the quasiparticle energies is equal to the total energy of the system. We prove that the FES formalism is equivalent to the semi-classical or Thomas Fermi limit of the self-consistent mean-field theory and the FES quasiparticle populations may be calculated from the Landau quasiparticle populations by making the correspondence between the FES and the Landau quasiparticle energies. The FES provides a natural semi-classical ideal gas description of the interacting particle gas.
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Submitted 30 October, 2013; v1 submitted 21 March, 2013;
originally announced March 2013.
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Fractional exclusion statistics in disordered interacting particle systems
Authors:
George Alexandru Nemnes,
Dragos-Victor Anghel
Abstract:
We develop a model based on the fractional exclusion statistics (FES) applicable to non-homogeneous interacting particle systems. Here the species represent elementary volumes in an (s+1)-dimensional space, formed by the direct product between the s-dimensional space of positions and the quasiparticle energy axis. The model is particularly suitable for systems with localized states. We prove the f…
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We develop a model based on the fractional exclusion statistics (FES) applicable to non-homogeneous interacting particle systems. Here the species represent elementary volumes in an (s+1)-dimensional space, formed by the direct product between the s-dimensional space of positions and the quasiparticle energy axis. The model is particularly suitable for systems with localized states. We prove the feasibility of our method by applying it to systems of different degrees of complexities. We first apply the formalism on simpler systems, formed of two sub-systems, and present numerical and analytical thermodynamic calculations, pointing out the quasiparticle population inversion and maxima in the heat capacity, in contrast to systems with only diagonal (direct) FES parameters. Further we investigate larger, non-homogeneous systems with repulsive screened Coulomb interactions, indicating accumulation and depletion effects at the interfaces. Finally, we consider systems with several degrees of disorder, which are prototypical for models with glassy behavior. We find that the disorder produces a spatial segregation of quasiparticles at low energies which significantly affects the heat capacity and the entropy of the system.
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Submitted 27 January, 2014; v1 submitted 17 August, 2012;
originally announced August 2012.
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Stochastic simulations for the time evolution of systems which obey generalized statistics: Fractional exclusion statistics and Gentile's statistics
Authors:
George Alexandru Nemnes,
Dragos-Victor Anghel
Abstract:
We present a stochastic method for the simulation of the time evolution in systems which obey generalized statistics, namely fractional exclusion statistics and Gentile's statistics. The transition rates are derived in the framework of canonical ensembles. This approach introduces a tool for describing interacting fermionic and bosonic systems in non-equilibrium as ideal FES systems, in a computat…
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We present a stochastic method for the simulation of the time evolution in systems which obey generalized statistics, namely fractional exclusion statistics and Gentile's statistics. The transition rates are derived in the framework of canonical ensembles. This approach introduces a tool for describing interacting fermionic and bosonic systems in non-equilibrium as ideal FES systems, in a computationally efficient manner. The two types of statistics are analyzed comparatively, indicating their intrinsic thermodynamic differences and revealing key aspects related to the species size.
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Submitted 26 July, 2010;
originally announced July 2010.