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K-doped Ba122 epitaxial thin film on MgO substrate by buffer engineering
Authors:
Dongyi Qin,
Kazumasa Iida,
Zimeng Guo,
Chao Wang,
Hikaru Saito,
Satoshi Hata,
Michio Naito,
Akiyasu Yamamoto
Abstract:
Molecular beam epitaxy of K-doped Ba122 (Ba$_{1-x}$K$_x$Fe$_\text{2}$As$_\text{2}$) superconductor was realized on a MgO substrate. Microstructural observation revealed that the undoped Ba122 served as a perfect buffer layer for epitaxial growth of the K-doped Ba122. The film exhibited a high critical temperature of 39.8 K and a high critical current density of 3.9 MA/cm$^\text{2}$ at 4 K. The suc…
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Molecular beam epitaxy of K-doped Ba122 (Ba$_{1-x}$K$_x$Fe$_\text{2}$As$_\text{2}$) superconductor was realized on a MgO substrate. Microstructural observation revealed that the undoped Ba122 served as a perfect buffer layer for epitaxial growth of the K-doped Ba122. The film exhibited a high critical temperature of 39.8 K and a high critical current density of 3.9 MA/cm$^\text{2}$ at 4 K. The successful growth of epitaxial thin film will enable artificial single grain boundary on oxide bicrystal substrates and reveal the grain boundary transport nature of K-doped Ba122.
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Submitted 13 July, 2022;
originally announced July 2022.
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Approaching the ultimate superconducting properties of (Ba,K)Fe2As2 by naturally formed low-angle grain boundary networks
Authors:
Kazumasa Iida,
Dongyi Qin,
Chiara Tarantini,
Takafumi Hatano,
Chao Wang,
Zimeng Guo,
Hongy Gao,
Hikaru Saito,
Satoshi Hata,
Michio Naito,
Akiyasu Yamamoto
Abstract:
The most effective way to enhance the dissipation-free supercurrent in presence of magnetic field for type II superconductors is the introduction of defects that acts as artificial pinning centres (APCs) for the vortices. For instance, the in-field critical current density of doped BaFe2As2 (Ba122), one of the most technologically important Fe-based superconductors, has been improved over the last…
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The most effective way to enhance the dissipation-free supercurrent in presence of magnetic field for type II superconductors is the introduction of defects that acts as artificial pinning centres (APCs) for the vortices. For instance, the in-field critical current density of doped BaFe2As2 (Ba122), one of the most technologically important Fe-based superconductors, has been improved over the last decade by APCs created by ion-irradiation. The technique of ion-irradiation has been commonly implemented to determine the ultimate superconducting properties. However, this method is rather complicated and expensive. Here, we report on a surprisingly high critical current density and strong pinning efficiency close to the crystallographic c-axis for a K-doped Ba122 epitaxial thin film without APCs, achieving performance comparable to ion-irradiated K-doped Ba122 single crystals. Microstructural analysis reveals that the film is composed of columnar grains having width around 30-60 nm. The grains are rotated around the b- (or a-) axis by 1.5 degree and around the c-axis by -1 degree, resulting in the formation of low-angle grain boundary networks. This study demonstrates that the upper limit of in-field properties reached in ion-irradiated K-doped Ba122 is achievable by grain boundary engineering, which is a simple and industrially scalable manner.
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Submitted 29 October, 2021;
originally announced October 2021.
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Revisiting Additive Compositionality: AND, OR and NOT Operations with Word Embeddings
Authors:
Masahiro Naito,
Sho Yokoi,
Geewook Kim,
Hidetoshi Shimodaira
Abstract:
It is well-known that typical word embedding methods such as Word2Vec and GloVe have the property that the meaning can be composed by adding up the embeddings (additive compositionality). Several theories have been proposed to explain additive compositionality, but the following questions remain unanswered: (Q1) The assumptions of those theories do not hold for the practical word embedding. (Q2) O…
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It is well-known that typical word embedding methods such as Word2Vec and GloVe have the property that the meaning can be composed by adding up the embeddings (additive compositionality). Several theories have been proposed to explain additive compositionality, but the following questions remain unanswered: (Q1) The assumptions of those theories do not hold for the practical word embedding. (Q2) Ordinary additive compositionality can be seen as an AND operation of word meanings, but it is not well understood how other operations, such as OR and NOT, can be computed by the embeddings. We address these issues by the idea of frequency-weighted centering at its core. This paper proposes a post-processing method for bridging the gap between practical word embedding and the assumption of theory about additive compositionality as an answer to (Q1). It also gives a method for taking OR or NOT of the meaning by linear operation of word embedding as an answer to (Q2). Moreover, we confirm experimentally that the accuracy of AND operation, i.e., the ordinary additive compositionality, can be improved by our post-processing method (3.5x improvement in top-100 accuracy) and that OR and NOT operations can be performed correctly.
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Submitted 19 December, 2022; v1 submitted 18 May, 2021;
originally announced May 2021.
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Realization of epitaxial thin films of the superconductor K-doped BaFe$_\text{2}$As$_\text{2}$
Authors:
Dongyi Qin,
Kazumasa Iida,
Takafumi Hatano,
Hikaru Saito,
Yiming Ma,
Chao Wang,
Satoshi Hata,
Michio Naito,
Akiyasu Yamamoto
Abstract:
The iron-based superconductor Ba$_{1-x}$K$_x$Fe$_\text{2}$As$_\text{2}$ is emerging as a key material for high magnetic field applications owing to the recent developments in superconducting wires and bulk permanent magnets. Epitaxial thin films play important roles in investigating and artificially tuning physical properties; nevertheless, the synthesis of Ba$_{1-x}$K$_x$Fe$_2$As$_2$ epitaxial th…
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The iron-based superconductor Ba$_{1-x}$K$_x$Fe$_\text{2}$As$_\text{2}$ is emerging as a key material for high magnetic field applications owing to the recent developments in superconducting wires and bulk permanent magnets. Epitaxial thin films play important roles in investigating and artificially tuning physical properties; nevertheless, the synthesis of Ba$_{1-x}$K$_x$Fe$_2$As$_2$ epitaxial thin films remained challenging because of the high volatility of K. Herein, we report the successful growth of epitaxial Ba$_{1-x}$K$_x$Fe$_\text{2}$As$_\text{2}$ thin films by molecular-beam epitaxy with employing a combination of fluoride substrates (CaF$_\text{2}$, SrF$_\text{2}$, and BaF$_\text{2}$) and a low growth temperature (350$-$420$^\circ$C). Our epitaxial thin film grown on CaF$_\text{2}$ showed sharp superconducting transition at an onset critical temperature of 36 K, slightly lower than bulk crystals by ~2 K due presumably to the strain effect arising from the lattice and thermal expansion mismatch. Critical current density ($J$$_\text{c}$) determined by the magnetization hysteresis loop is as high as 2.2 MA/cm$^\text{2}$ at 4 K under self-field. In-field $J$$_\text{c}$ characteristics of the film are superior to the bulk crystals. The realization of epitaxial thin films opens opportunities for tuning superconducting properties by epitaxial strain and revealing intrinsic grain boundary transport of Ba$_{1-x}$K$_x$Fe$_\text{2}$As$_\text{2}$.
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Submitted 6 January, 2021; v1 submitted 26 December, 2020;
originally announced December 2020.
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A Word Communication System with Caregiver Assist for Amyotrophic Lateral Sclerosis Patients in Completely and Almost Completely Locked-in State
Authors:
Kuniaki Ozawa,
Masayoshi Naito,
Naoki Tanaka,
Shiryu Wada
Abstract:
People with heavy physical impairment such as amyotrophic lateral sclerosis (ALS) in a completely locked-in state (CLIS) suffer from inability to express their thoughts to others. To solve this problem, many brain-computer interface (BCI) systems have been developed, but they have not proven sufficient for CLIS. In this paper, we propose a word communication system: a BCI with caregiver assist, in…
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People with heavy physical impairment such as amyotrophic lateral sclerosis (ALS) in a completely locked-in state (CLIS) suffer from inability to express their thoughts to others. To solve this problem, many brain-computer interface (BCI) systems have been developed, but they have not proven sufficient for CLIS. In this paper, we propose a word communication system: a BCI with caregiver assist, in which caregivers play an active role in helping patients express a word. We report here that four ALS patients in almost CLIS and one in CLIS succeeded in expressing their own words (in Japanese) in response to wh-questions that could not be answered "yes/no." Each subject selected vowels (maximum three) contained in the word that he or she wanted to express in a sequential way, by using a "yes/no" communication aid based on near-infrared light. Then, a caregiver entered the selected vowels into a dictionary with vowel entries, which returned candidate words having those vowels. When there were no appropriate words, the caregiver changed one vowel and searched again or started over from the beginning. When an appropriate word was selected, it was confirmed by the subject via "yes/no" answers. Three subjects expressed "yes" for the selected word at least six times out of eight (reliability of 91.0% by a statistical measure), one subject (in CLIS) did so five times out of eight (74.6%), and one subject three times out of four (81.3%). We have thus taken the first step toward a practical word communication system for such patients.
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Submitted 22 April, 2020;
originally announced April 2020.
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Universal scaling behavior of the upper critical field in strained FeSe0.7Te0.3 thin films
Authors:
Feifei Yuan,
Vadim Grinenko,
Kazumasa Iida,
Stefan Richter,
Aurimas Pukenas,
Werner Skrotzki,
Masahito Sakoda,
Michio Naito,
Alberto Sala,
Marina Putti,
Aichi Yamashita,
Yoshihiko Takano,
Zhixiang Shi,
Kornelius Nielsch,
Ruben Huehne
Abstract:
Revealing the universal behaviors of iron-based superconductors (FBS) is important to elucidate the microscopic theory of superconductivity. In this work, we investigate the effect of in-plane strain on the slope of the upper critical field Hc2 at the superconducting transition temperature Tc (i.e. -dHc2/dT) for FeSe0.7Te0.3 thin films. The in-plane strain tunes Tc in a broad range, while the comp…
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Revealing the universal behaviors of iron-based superconductors (FBS) is important to elucidate the microscopic theory of superconductivity. In this work, we investigate the effect of in-plane strain on the slope of the upper critical field Hc2 at the superconducting transition temperature Tc (i.e. -dHc2/dT) for FeSe0.7Te0.3 thin films. The in-plane strain tunes Tc in a broad range, while the composition and disorder are almost unchanged. We show that -dHc2/dT scales linearly with Tc, indicating that FeSe0.7Te0.3 follows the same universal behavior as observed for pnictide FBS. The observed behavior is consistent with a multiband superconductivity paired by interband interaction such as sign change s+- superconductivity.
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Submitted 13 September, 2018;
originally announced September 2018.
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Intrinsic charge dynamics in high-Tc AFeAs(O,F) superconductors
Authors:
A. Charnukha,
D. Pröpper,
N. D. Zhigadlo,
M. Naito,
M. Schmidt,
Z. Wang,
J. Deisenhofer,
A. Loidl,
B. Keimer,
A. V. Boris,
D. N. Basov
Abstract:
We report the first determination of the in-plane complex optical conductivity of 1111 high-Tc superconducting iron oxypnictide single crystals PrFeAsO0.6F0.35 and thin films SmFeAsO1-xFx by means of bulk-sensitive conventional and micro-focused infrared spectroscopy, ellipsometry, and time-domain THz transmission spectroscopy. A strong itinerant contribution is found to exhibit a dramatic differe…
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We report the first determination of the in-plane complex optical conductivity of 1111 high-Tc superconducting iron oxypnictide single crystals PrFeAsO0.6F0.35 and thin films SmFeAsO1-xFx by means of bulk-sensitive conventional and micro-focused infrared spectroscopy, ellipsometry, and time-domain THz transmission spectroscopy. A strong itinerant contribution is found to exhibit a dramatic difference in coherence between the crystal and the film. Using extensive temperature-dependent measurements of THz transmission we identify a previously undetected 2.5-meV collective mode in the optical conductivity of SmFeAs(O,F), which is strongly suppressed at Tc and experiences an anomalous T-linear softening and narrowing below T*=110K>>Tc. The suppression of the infrared absorption in the superconducting state reveals a large optical superconducting gap with a similar gap ratio 2D=kBTc=7 in both materials, indicating strong pairing.
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Submitted 5 April, 2018;
originally announced April 2018.
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The influence of the in-plane lattice constant on the superconducting transition temperature of FeSe0.7Te0.3 thin films
Authors:
Feifei Yuan,
Kazumasa Iida,
Vadim Grinenko,
Paul Chekhonin,
Aurimas Pukenas,
Werner Skrotzki,
Masahito Sakoda,
Michio Naito,
Alberto Sala,
Marina Putti,
Aichi Yamashita,
Yoshihiko Takano,
Zhixiang Shi,
Kornelius Nielsch,
Ruben Huehne
Abstract:
Epitaxial Fe(Se,Te) thin films were prepared by pulsed laser deposition on (La0.18Sr0.82)(Al0.59Ta0.41)O3 (LSAT), CaF2-buffered LSAT and bare CaF2 substrates, which exhibit an almost identical in-plane lattice parameter. The composition of all Fe(Se,Te) films were determined to be FeSe0.7Te0.3 by energy dispersive X-ray spectroscopy, irrespective of the substrate. Albeit the lattice parameters of…
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Epitaxial Fe(Se,Te) thin films were prepared by pulsed laser deposition on (La0.18Sr0.82)(Al0.59Ta0.41)O3 (LSAT), CaF2-buffered LSAT and bare CaF2 substrates, which exhibit an almost identical in-plane lattice parameter. The composition of all Fe(Se,Te) films were determined to be FeSe0.7Te0.3 by energy dispersive X-ray spectroscopy, irrespective of the substrate. Albeit the lattice parameters of all templates have comparable values, the in-plane lattice parameter of the FeSe0.7Te0.3 films varies significantly. We found that the superconducting transition temperature (Tc) of FeSe0.7Te0.3 thin films is strongly correlated with their a-axis lattice parameter. The highest Tc of over 19 K was observed for the film on bare CaF2 substrate, which is related to unexpectedly large in-plane compressive strain originating mostly from the thermal expansion mismatch between the FeSe0.7Te0.3 film and the substrate.
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Submitted 9 June, 2017;
originally announced June 2017.
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Eliashberg analysis of the optical conductivity in superconducting Pr$_2$CuO$_{x}$ ($x \simeq 4$)
Authors:
E. Schachinger,
G. Chanda,
R. P. S. M. Lobo,
M. Naito,
A. V. Pronin
Abstract:
Superconducting Pr$_2$CuO$_x$, $x\simeq 4$ films with $T^\prime$ structure and a $T_c$ of 27 K have been investigated by millimeter-wave transmission and broadband (infrared-to-ultraviolet) reflectivity measurements in the normal and superconducting state. The results obtained by both experimental methods show a consistent picture of the superconducting condensate formation below $T_c$. An Eliashb…
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Superconducting Pr$_2$CuO$_x$, $x\simeq 4$ films with $T^\prime$ structure and a $T_c$ of 27 K have been investigated by millimeter-wave transmission and broadband (infrared-to-ultraviolet) reflectivity measurements in the normal and superconducting state. The results obtained by both experimental methods show a consistent picture of the superconducting condensate formation below $T_c$. An Eliashberg analysis of the data proves $d$-wave superconductivity and unitary-limit impurity scattering of the charge carriers below $T_{c}$. The derived electron-exchange boson interaction spectral function $I^2χ(ω)$ shows only marginal changes at the superconducting transition with the mass enhancement factor $λ$, the first inverse moment of $I^2χ(ω)$, being equal to 4.16 at 30 K and to 4.25 at 4 K.
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Submitted 9 December, 2014;
originally announced December 2014.
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Optical study of superconducting Pr$_2$CuO$_{x}$ with $x\simeq 4$
Authors:
G. Chanda,
R. P. S. M. Lobo,
E. Schachinger,
J. Wosnitza,
M. Naito,
A. V. Pronin
Abstract:
Superconducting Pr$_2$CuO$_x$, $x\simeq 4$ (PCO) films with $T^\prime$ structure and a $T_c$ of 27 K have been investigated by various optical methods in a wide frequency (7 - 55000 cm$^{-1}$) and temperature (2 to 300 K) range. The optical spectra do not reveal any indication of a normal-state gap formation. A Drude-like peak centered at zero frequency dominates the optical conductivity below 150…
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Superconducting Pr$_2$CuO$_x$, $x\simeq 4$ (PCO) films with $T^\prime$ structure and a $T_c$ of 27 K have been investigated by various optical methods in a wide frequency (7 - 55000 cm$^{-1}$) and temperature (2 to 300 K) range. The optical spectra do not reveal any indication of a normal-state gap formation. A Drude-like peak centered at zero frequency dominates the optical conductivity below 150 K. At higher temperatures, it shifts to finite frequencies. The detailed analysis of the low-frequency conductivity reveals that the Drude peak and a far-infrared (FIR) peak centered at about 300 cm$^{-1}$ persist at all temperatures. The FIR-peak spectral weight is found to grow at the expense of the Drude spectral weight with increasing temperature. The temperature dependence of the penetration depth follows a behavior typical for $d$-wave superconductors. The absolute value of the penetration depth for zero temperature is 1.6 $μ$m, indicating a rather low density of the superconducting condensate.
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Submitted 27 June, 2014;
originally announced June 2014.
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Bulk superconductivity in undoped T'-La$_{1.9}$Y$_{0.1}$CuO$_4$ probed by muon spin rotation
Authors:
K. M. Kojima,
Y. Krockenberger,
I. Yamauchi,
M. Miyazaki,
M. Hiraishi,
A. Koda,
R. Kadono,
R. Kumai,
H. Yamamoto,
A. Ikeda,
M. Naito
Abstract:
The Meissner effect has been directly demonstrated by depth-resolved muon spin rotation measurements in high-quality thin films of the T'-structured cuprate, T'-La$_{1.9}$Y$_{0.1}$CuO$_4$, to confirm bulk superconductivity ($T_c\simeq21$ K) in its {\sl undoped} state. The gradual expelling of an external magnetic field is observed over a depth range of $\sim$100 nm in films with a thickness of 275…
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The Meissner effect has been directly demonstrated by depth-resolved muon spin rotation measurements in high-quality thin films of the T'-structured cuprate, T'-La$_{1.9}$Y$_{0.1}$CuO$_4$, to confirm bulk superconductivity ($T_c\simeq21$ K) in its {\sl undoped} state. The gradual expelling of an external magnetic field is observed over a depth range of $\sim$100 nm in films with a thickness of 275(15) nm, from which the penetration depth is deduced to be 466(22) nm. Based on this result, we argue that the true ground state of the "parent" compound of the $n$-type cuprates is not a Mott insulator but a strongly correlated metal with colossal sensitivity to apical oxygen impurities.
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Submitted 19 May, 2014;
originally announced May 2014.
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Oxypnictide SmFeAs(O,F) superconductor: a candidate for high-field magnet applications
Authors:
Kazumasa Iida,
Jens Haenisch,
Chiara Tarantini,
Fritz Kurth,
Jan Jaroszynski,
Shinya Ueda,
Michio Naito,
Ataru Ichinose,
Ichiro Tsukada,
Elke Reich,
Vadim Grinenko,
Ludwig Schultz,
Bernhard Holzapfel
Abstract:
The recently discovered oxypnictide superconductor SmFeAs(O,F) is the most attractive material among the Fe-based superconductors due to its highest transition temperature of 56 K and potential for high-field performance. In order to exploit this new material for superconducting applications, the knowledge and understanding of its electro-magnetic properties are needed. Recent success in fabricati…
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The recently discovered oxypnictide superconductor SmFeAs(O,F) is the most attractive material among the Fe-based superconductors due to its highest transition temperature of 56 K and potential for high-field performance. In order to exploit this new material for superconducting applications, the knowledge and understanding of its electro-magnetic properties are needed. Recent success in fabricating epitaxial SmFeAs(O,F) thin films opens a great opportunity to explore their transport properties. Here we report on a high critical current density of over 10^5 A/cm^2 at 45 T and 4.2 K for both main field orientations, feature favourable for high-field magnet applications. Additionally, by investigating the pinning properties, we observed a dimensional crossover between the superconducting coherence length and the FeAs interlayer distance at 30-40 K, indicative of a possible intrinsic Josephson junction in SmFeAs(O,F) at low temperatures that can be employed in electronics applications such as a terahertz radiation source and a superconducting Qubit.
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Submitted 4 July, 2013;
originally announced July 2013.
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Superconductor-to-Metal Quantum Phase Transition in Overdoped $La_{2-x}Sr_xCuO_4$
Authors:
T. R. Lemberger,
I. Hetel,
A. Tsukada,
M. Naito,
M. Randeria
Abstract:
We investigate $T_c$ and magnetic penetration depth $λ(T)$ near the superconductor-metal quantum phase transition in overdoped $La_{2-x}Sr_{x}CuO_{4}$ films. Both $T_c$ and superfluid density $n_s$, $\propto λ^{-2}$, decrease with overdoping. They obey the scaling relation $T_c \propto [λ^{-2}(0)]^α$ with $α\approx 1/2$. We discuss this result in the frameworks of disordered d-wave superconductors…
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We investigate $T_c$ and magnetic penetration depth $λ(T)$ near the superconductor-metal quantum phase transition in overdoped $La_{2-x}Sr_{x}CuO_{4}$ films. Both $T_c$ and superfluid density $n_s$, $\propto λ^{-2}$, decrease with overdoping. They obey the scaling relation $T_c \propto [λ^{-2}(0)]^α$ with $α\approx 1/2$. We discuss this result in the frameworks of disordered d-wave superconductors and of scaling near quantum critical points. Our result, and the linear scaling ($α\approx 1$) found for the more anisotropic $Tl_2Ba_2CuO_{6+δ}$, can both be understood in terms of quantum critical scaling, with different dimensionalities for fluctuations.
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Submitted 6 October, 2010;
originally announced October 2010.
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Anomalously Sharp Superconducting Transitions in Overdoped $La_{2-x}Sr_{x}CuO_{4}$ Films
Authors:
T. R. Lemberger,
I. Hetel,
A. Tsukada,
M. Naito
Abstract:
We present measurements of $ab$-plane resistivity $ρ_{ab}(T)$ and superfluid density [$\propto λ^{-2}$, $λ$ = magnetic penetration depth] in $La_{2-x}Sr_{x}CuO_{4}$ films. As Sr concentration $x$ exceeds about 0.22, the superconducting transition sharpens dramatically, becoming as narrow as 200 mK near the super-to-normal metal quantum critical point. At the same time, $ρ_{ab}(T)$, $λ^{-2}(T)$, an…
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We present measurements of $ab$-plane resistivity $ρ_{ab}(T)$ and superfluid density [$\propto λ^{-2}$, $λ$ = magnetic penetration depth] in $La_{2-x}Sr_{x}CuO_{4}$ films. As Sr concentration $x$ exceeds about 0.22, the superconducting transition sharpens dramatically, becoming as narrow as 200 mK near the super-to-normal metal quantum critical point. At the same time, $ρ_{ab}(T)$, $λ^{-2}(T)$, and transition temperature $T_c$ decrease, and upward curvature develops in $λ^{-2}(T)$. Given the sharp transitions, we interpret these results in the context of a homogeneous d-wave superconducting state, with elastic scattering that is enhanced relative to underdoped LSCO due to weaker electron correlations. This interpretation conflicts with the viewpoint that the overdoped state is inhomogeneous due to phase separation into superconducting and normal metal regions.
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Submitted 6 October, 2010; v1 submitted 16 August, 2010;
originally announced August 2010.
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Synthesis of infinite-layer LaNiO2 films by metal-organic deposition
Authors:
D. Kaneko,
K. Yamagishi,
A. Tsukada,
T. Manabe,
M. Naito
Abstract:
We report the synthesis of infinite-layer LaNiO2 thin films by metal organic decomposition. Our work is aimed to synthesize perovskite-like oxides with 3d9 electronic configuration, which is common to high-Tc copper oxides. The 3d9 configuration is very rare in oxides other than cuprates. Ni1+ oxides, even though Ni1+ is an unusual oxidation state, may be one of very few candidates. One example…
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We report the synthesis of infinite-layer LaNiO2 thin films by metal organic decomposition. Our work is aimed to synthesize perovskite-like oxides with 3d9 electronic configuration, which is common to high-Tc copper oxides. The 3d9 configuration is very rare in oxides other than cuprates. Ni1+ oxides, even though Ni1+ is an unusual oxidation state, may be one of very few candidates. One example of the Ni1+ phases is infinite-layer LaNiO2. The bulk synthesis of LaNiO2 is difficult, but we demonstrate in this article that the thin-film synthesis of LaNiO2 by metal organic decomposition is rather easy. This is due to the advantage of thin films with a large-surface-to-volume ratio, which makes oxygen diffusion prompt. Resistivity measurements indicate that LaNiO2 is essentially a metal but unfortunately with no trace of superconductivity yet.
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Submitted 12 November, 2008;
originally announced November 2008.
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Generic phase diagram of "electron-doped" T' cuprates
Authors:
Osamu Matsumoto,
Aya Utsuki,
Akio Tsukada,
Hideki Yamamoto,
Takaaki Manabe,
Michio Naito
Abstract:
We investigated the generic phase diagram of the electron doped superconductor, Nd2-xCexCuO4, using films prepared by metal organic decomposition. After careful oxygen reduction treatment to remove interstitial Oap atoms, we found that the Tc increases monotonically from 24 K to 29 K with decreasing x from 0.15 to 0.00, demonstrating a quite different phase diagram from the previous bulk one. Th…
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We investigated the generic phase diagram of the electron doped superconductor, Nd2-xCexCuO4, using films prepared by metal organic decomposition. After careful oxygen reduction treatment to remove interstitial Oap atoms, we found that the Tc increases monotonically from 24 K to 29 K with decreasing x from 0.15 to 0.00, demonstrating a quite different phase diagram from the previous bulk one. The implication of our results is discussed on the basis of tremendous influence of Oap "impurities" on superconductivity and also magnetism in T' cuprates. Then we conclude that our result represents the generic phase diagram for oxygen-stoichiometric Nd2-xCexCuO4.
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Submitted 12 November, 2008;
originally announced November 2008.
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Reduction dependence of superconductivity in undoped T' cuprates
Authors:
Osamu Matsumoto,
Aya Utsuki,
Akio Tsukada,
Hideki Yamamoto,
Takaaki Manabe,
Michio Naito
Abstract:
We have recently achieved superconductivity in undoped T'-RE2CuO4 (RE: Pr, Nd, Sm, Eu, and Gd), using epitaxial thin films by metal organic decomposition. The key recipes to achieve superconductivity are low-PO2 firing and subsequent vacuum reduction to minimize the amount of impurity oxygen atoms, which are very harmful to high-Tc superconductivity. In this article, we report our investigation…
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We have recently achieved superconductivity in undoped T'-RE2CuO4 (RE: Pr, Nd, Sm, Eu, and Gd), using epitaxial thin films by metal organic decomposition. The key recipes to achieve superconductivity are low-PO2 firing and subsequent vacuum reduction to minimize the amount of impurity oxygen atoms, which are very harmful to high-Tc superconductivity. In this article, we report our investigation on the reduction dependence of superconductivity of T'-RE2CuO4. For thin films, the amount of remnant Oap atoms is difficult to evaluate but we propose that one good measure for this may be the c-axis lattice constant, which tells us whether the reduction is insufficient or excessive.
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Submitted 6 November, 2008;
originally announced November 2008.
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Superconductivity in undoped T' cuprates with Tc over 30 K
Authors:
Osamu Matsumoto,
Aya Utsuki,
Akio Tsukada,
Hideki Yamamoto,
Takaaki Manabe,
Michio Naito
Abstract:
Undoped cuprates have long been considered to be antiferromagnetic insulators. In this article, however, we report that superconductivity is achieved in undoped T'-RE2CuO4 (RE = Pr, Nd, Sm, Eu, and Gd). Our discovery was performed by using metal-organic decomposition (MOD), an inexpensive and easy-to-implement thin-film process. The keys to prepare the superconducting films are firing with low p…
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Undoped cuprates have long been considered to be antiferromagnetic insulators. In this article, however, we report that superconductivity is achieved in undoped T'-RE2CuO4 (RE = Pr, Nd, Sm, Eu, and Gd). Our discovery was performed by using metal-organic decomposition (MOD), an inexpensive and easy-to-implement thin-film process. The keys to prepare the superconducting films are firing with low partial-pressure of oxygen and reduction at low temperatures. The highest Tc of undoped T'-RE2CuO4 is over 30 K, substantially higher than "electron-doped" analogs. Remarkably, Gd2CuO4, even the derivatives of which have not shown superconductivity so far, gets superconducting with Tconset as high as ~ 20 K. The implication of our discovery is briefly discussed.
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Submitted 28 May, 2008;
originally announced May 2008.
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Superconductivity phase diagrams of electron doped cuprates R(2-x)CexCuO4 (R = La, Pr, Nd, Sm, and Eu)
Authors:
Y. Krockenberger,
J. Kurian,
A. Winkler,
A. Tsukada,
M. Naito,
L. Alff
Abstract:
The superconductivity phase diagrams of electron doped cuprates of the form R(2-x)CexCuO4 (with R= La, Pr, Nd, Sm, and Eu) have been determined for cerium compositions 0 < x < 0.36 in a consistent series of epitaxial thin films grown by reactive molecular beam epitaxy (MBE). The use of epitaxial thin films allows the growth of materials away from thermodynamical equilibrium expanding the accessi…
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The superconductivity phase diagrams of electron doped cuprates of the form R(2-x)CexCuO4 (with R= La, Pr, Nd, Sm, and Eu) have been determined for cerium compositions 0 < x < 0.36 in a consistent series of epitaxial thin films grown by reactive molecular beam epitaxy (MBE). The use of epitaxial thin films allows the growth of materials away from thermodynamical equilibrium expanding the accessible phase space beyond the availability of bulk material. The superconducting phase space systematically increases with the rare earth ionic size. The doping concentration where the maximal transition temperature occurs in La(2-x)CexCuO4 is considerably shifted to lower doping (x ~ 0.09) compared to La(2-x)SrxCuO4 (x ~ 0.15). At the same time, the width of the superconducting region is broadened.
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Submitted 7 May, 2008;
originally announced May 2008.
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Secret Key Agreement by Soft-decision of Signals in Gaussian Maurer's Model
Authors:
Masashi Naito,
Shun Watanabe,
Ryutaroh Matsumoto,
Tomohiko Uyematsu
Abstract:
We consider the problem of secret key agreement in Gaussian Maurer's Model. In Gaussian Maurer's model, legitimate receivers, Alice and Bob, and a wire-tapper, Eve, receive signals randomly generated by a satellite through three independent memoryless Gaussian channels respectively. Then Alice and Bob generate a common secret key from their received signals. In this model, we propose a protocol…
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We consider the problem of secret key agreement in Gaussian Maurer's Model. In Gaussian Maurer's model, legitimate receivers, Alice and Bob, and a wire-tapper, Eve, receive signals randomly generated by a satellite through three independent memoryless Gaussian channels respectively. Then Alice and Bob generate a common secret key from their received signals. In this model, we propose a protocol for generating a common secret key by using the result of soft-decision of Alice and Bob's received signals. Then, we calculate a lower bound on the secret key rate in our proposed protocol. As a result of comparison with the protocol that only uses hard-decision, we found that the higher rate is obtained by using our protocol.
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Submitted 18 April, 2008;
originally announced April 2008.
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Superconductivity in undoped T'-RE2CuO4 with Tc over 30 K
Authors:
O. Matsumoto,
A. Utsuki,
A. Tsukada,
H. Yamamoto,
T. Manabe,
M. Naito
Abstract:
In this article, we report the superconductivity in T'-RE2CuO4 (RE = Pr, Nd, Sm, Eu, and Gd), which have been for a long time believed as a Mott insulator. Our discovery was achieved by using metal-organic decomposition (MOD), an inexpensive and easy-to-implement thin-film process. The keys to prepare the superconducting films are firing with low partial-pressure of oxygen and reduction at low t…
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In this article, we report the superconductivity in T'-RE2CuO4 (RE = Pr, Nd, Sm, Eu, and Gd), which have been for a long time believed as a Mott insulator. Our discovery was achieved by using metal-organic decomposition (MOD), an inexpensive and easy-to-implement thin-film process. The keys to prepare the superconducting films are firing with low partial-pressure of oxygen and reduction at low temperatures. The highest Tc of undoped T'-RE2CuO4 is over 30 K, substantially higher than "electron-doped" analogs. Remarkably, Gd2CuO4, even the derivatives of which have not shown superconductivity so far, gets superconducting with Tconset as high as 20 K. The implication of our discovery is briefly discussed.
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Submitted 29 January, 2008;
originally announced January 2008.
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Spin Hall effect in Sr2RuO4 and transition metals (Nb,Ta)
Authors:
T. Tanaka,
H. Kontani,
M. Naito,
D. S. Hirashima,
K. Yamada,
J. Inoue
Abstract:
We study the intrinsic spin Hall conductivity (SHC) and the $d$-orbital Hall conductivity (OHC) in metallic $d$-electron systems based on the multiorbital tight-binding model. The obtained Hall conductivities are much larger than that in $p$-type semiconductors. The origin of these huge Hall effects is the "effective Aharonov-Bohm phase" induced by the signs of inter-orbital hopping integrals as…
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We study the intrinsic spin Hall conductivity (SHC) and the $d$-orbital Hall conductivity (OHC) in metallic $d$-electron systems based on the multiorbital tight-binding model. The obtained Hall conductivities are much larger than that in $p$-type semiconductors. The origin of these huge Hall effects is the "effective Aharonov-Bohm phase" induced by the signs of inter-orbital hopping integrals as well as atomic spin-orbit interaction. Huge SHC and OHC due to this mecahnism is ubiquitous in multiorbital transition metals.
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Submitted 9 November, 2007;
originally announced November 2007.
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Study of Intrinsic Spin Hall Effect and Orbital Hall Effect in 4d- and 5d- Transition Metals
Authors:
T. Tanaka,
H. Kontani,
M. Naito,
T. Naito,
D. S. Hirashima,
K. Yamada,
J. Inoue
Abstract:
We study the intrinsic spin Hall conductivity (SHC) in various $5d$-transition metals (Ta, W, Re, Os, Ir, Pt, and Au) and 4d-transition metals (Nb, Mo, Tc, Ru, Rh, Pd, and Ag) based on the Naval Research Laboratory tight-binding model, which enables us to perform quantitatively reliable analysis. In each metal, the obtained intrinsic SHC is independent of resistivity in the low resistive regime…
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We study the intrinsic spin Hall conductivity (SHC) in various $5d$-transition metals (Ta, W, Re, Os, Ir, Pt, and Au) and 4d-transition metals (Nb, Mo, Tc, Ru, Rh, Pd, and Ag) based on the Naval Research Laboratory tight-binding model, which enables us to perform quantitatively reliable analysis. In each metal, the obtained intrinsic SHC is independent of resistivity in the low resistive regime ($ρ< 50 μΩ\text{cm}$) whereas it decreases in proportion to $ρ^{-2}$ in the high resistive regime. In the low resistive regime, the SHC takes a large positive value in Pt and Pd, both of which have approximately nine $d$-electrons per ion ($n_d=9$). On the other hand, the SHC takes a large negative value in Ta, Nb, W, and Mo where $n_d<5$. In transition metals, a conduction electron acquires the trajectory-dependent phase factor that originates from the atomic wavefunction. This phase factor, which is reminiscent of the Aharonov-Bohm phase, is the origin of the SHC in paramagnetic metals and that of the anomalous Hall conductivity in ferromagnetic metals. Furthermore, each transition metal shows huge and positive $d$-orbital Hall conductivity (OHC), independently of the strength of the spin-orbit interaction (SOI). Since the OHC is much larger than the SHC, it will be possible to realize a {\it orbitronics device} made of transition metals.
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Submitted 26 February, 2008; v1 submitted 8 November, 2007;
originally announced November 2007.
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Study of intrinsic spin and orbital Hall effects in Pt based on a (6s, 6p, 5d) tight-binding model
Authors:
H. Kontani,
M. Naito,
D. S. Hirashima,
K. Yamada,
J. Inoue
Abstract:
We study the origin of the intrinsic spin Hall conductivity (SHC) and the d-orbital Hall conductivity (OHC) in Pt based on a multiorbital tight-binding model with spin-orbit interaction. We find that the SHC reaches 1000 \hbar/eΩcm when the resistivity ρis smaller than ~10 μΩcm, whereas it decreases to 300 \hbar/eΩcm when ρ~ 100 μΩcm. In addition, the OHC is still larger than the SHC. The origin…
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We study the origin of the intrinsic spin Hall conductivity (SHC) and the d-orbital Hall conductivity (OHC) in Pt based on a multiorbital tight-binding model with spin-orbit interaction. We find that the SHC reaches 1000 \hbar/eΩcm when the resistivity ρis smaller than ~10 μΩcm, whereas it decreases to 300 \hbar/eΩcm when ρ~ 100 μΩcm. In addition, the OHC is still larger than the SHC. The origin of huge SHE and OHE in Pt is the large ``effective magnetic flux'' that is induced by the interorbital transition between d_{xy}- and d_{x2-y2}-orbitals with the aid of the strong spin-orbit interaction.
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Submitted 8 January, 2008; v1 submitted 24 May, 2007;
originally announced May 2007.
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Charge transfer gap for T'-RE2CuO4 and T-La2CuO4 as estimated from Madelung potential calculations
Authors:
A. Tsukada,
H. Shibata,
M. Noda,
H. Yamamoto,
M. Naito
Abstract:
T'-RE2CuO4 (RE: rare-earth element), after appropriate "reduction", has fairly high conductivity and also exhibits clear Fermi edge in photoemission spectroscopy. To clarify the origin of conductivity in the T' mother compounds, we evaluated the unscreened charge-transfer gap for T'-RE2CuO4 and T-La2CuO4. The value of charge-transfer gap for T'-compounds almost linearly decreases with increasing…
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T'-RE2CuO4 (RE: rare-earth element), after appropriate "reduction", has fairly high conductivity and also exhibits clear Fermi edge in photoemission spectroscopy. To clarify the origin of conductivity in the T' mother compounds, we evaluated the unscreened charge-transfer gap for T'-RE2CuO4 and T-La2CuO4. The value of charge-transfer gap for T'-compounds almost linearly decreases with increasing the ionic radius of RE from 12.24 eV for T'-Tm2CuO4 to 9.90 eV for T'-La2CuO4. The results qualitatively explain metallic conductivity in T'-RE2CuO4 for large RE.
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Submitted 15 March, 2006;
originally announced March 2006.
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Doping of Ce in T-La2CuO4: Rigorous test for electron-hole symmetry for high-Tc superconductivity
Authors:
A. Tsukada,
H. Yamamoto,
M. Naito
Abstract:
We report that Ce doping was achieved in La2CuO4 with the K2NiF4 (T) structure for the first time by molecular beam epitaxy. A synthesis temperature of as low as ~ 630C and an appropriate substrate choice, i.e., (001)LaSrGaO4 (a \~ 3.843 A), enebled us to incorporate Ce into K2NiF4 lattice and to obtain Ce-doped T-La2-xCexCuO4 up to x ~ 0.06. The doping of Ce makes T-La2CuO4 more insulating, whi…
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We report that Ce doping was achieved in La2CuO4 with the K2NiF4 (T) structure for the first time by molecular beam epitaxy. A synthesis temperature of as low as ~ 630C and an appropriate substrate choice, i.e., (001)LaSrGaO4 (a \~ 3.843 A), enebled us to incorporate Ce into K2NiF4 lattice and to obtain Ce-doped T-La2-xCexCuO4 up to x ~ 0.06. The doping of Ce makes T-La2CuO4 more insulating, which is in sharp contrast to Sr (or Ba) doping in T-La2CuO4, which make the compound metallic and superconducting. The observed smooth increase in resistivity from the hole-doped side (T-La2-xSrxCuO4) to the electron-doped side (T-La2-xCexCuO4) indicates that the electron-hole symmetry is broken in the T-phase materials.
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Submitted 13 February, 2006;
originally announced February 2006.
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Fabrication and properties of MgB2/AlOx/MgB2 tunnel junctions
Authors:
K. Ueda,
S. Saito,
K. Semba,
T. Makimoto,
M. Naito
Abstract:
Sandwich-type MgB2 Josephson tunnel junctions (MgB2/AlOx/MgB2) have been fabricated using as-grown MgB2 films formed by molecular beam epitaxy. The junctions exhibited substantial supercurrent and a well-defined superconducting gap (D=2.2~2.3mV). The superconducting gap voltage (D) agrees well with those of the smaller gap in the multi-gap scenario. The IcRN product is 0.4-1.3 mV at 4.2K, but ap…
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Sandwich-type MgB2 Josephson tunnel junctions (MgB2/AlOx/MgB2) have been fabricated using as-grown MgB2 films formed by molecular beam epitaxy. The junctions exhibited substantial supercurrent and a well-defined superconducting gap (D=2.2~2.3mV). The superconducting gap voltage (D) agrees well with those of the smaller gap in the multi-gap scenario. The IcRN product is 0.4-1.3 mV at 4.2K, but approaches to 2.0 mV at 50 mK. The Ic has peculiar temperature dependence far from the Ambegaokar-Baratoff formula. It rapidly decreases with temperature, and disappears above T = 20 K, which is much lower than the gap closing temperature. Interface microstructure between AlOx and MgB2 were investigated using cross-sectional transmission electron microscopy to clarify the problems in our tunnel junctions. There are poor-crystalline MgB2 layers and/or amorphous Mg-B composite layers of a few nanometers between AlOx barrier and the upper MgB2 layer. The poor-crystalline upper Mg-B layers seem to behave as normal metal or deteriorated superconducting layers, which may be the principal reason for all non-idealities of our MgB2/AlOx/MgB2 junctions.
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Submitted 30 January, 2006;
originally announced January 2006.
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Silver-assisted growth of NdBa2Cu3O7-d thin films: A novel approach for the growth of superior quality ceramic oxide films
Authors:
J. Kurian,
H. Sato,
T. Makimoto,
M. Naito
Abstract:
We have grown NdBa2Cu3O7-d films under silver atomic flux by molecular beam epitaxy, which show a drastic improvement in microstructure and also crystallinity leading to 30 % enhancement in critical current density. The most remarkable point is that the final film is free from silver. The key to our process in achieving a silver-free film was the use of RF-activated oxygen that oxidizes silver,…
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We have grown NdBa2Cu3O7-d films under silver atomic flux by molecular beam epitaxy, which show a drastic improvement in microstructure and also crystallinity leading to 30 % enhancement in critical current density. The most remarkable point is that the final film is free from silver. The key to our process in achieving a silver-free film was the use of RF-activated oxygen that oxidizes silver, nonvolatile, to silver oxide, volatile at the deposition temperature. This process enables one to utilize the beneficial effects of silver in the growth of oxide films and at the same time ensures that the final film be free from silver, which is important for high-frequency applications. This method can be made use in the growth of thin films of other complex oxide materials.
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Submitted 30 June, 2005;
originally announced July 2005.
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Role of impurity oxygen in superconductivity of "non-doped" T'-(La,RE)2CuO4
Authors:
A. Tsukada,
M. Noda,
H. Yamamoto,
M. Naito
Abstract:
We have systematically investigated the effect of oxygen nonstoichiometry in a nominally undoped superconductor T'-(La,Y)2CuO4+y. In the experiments, the reduction condition was changed after the sample growth by MBE. The superconductivity is very sensitive to the reduction condition. With systematically increasingly reduced atmospheres, resistivity shows a continuous drop and no discontinuity i…
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We have systematically investigated the effect of oxygen nonstoichiometry in a nominally undoped superconductor T'-(La,Y)2CuO4+y. In the experiments, the reduction condition was changed after the sample growth by MBE. The superconductivity is very sensitive to the reduction condition. With systematically increasingly reduced atmospheres, resistivity shows a continuous drop and no discontinuity is observed even until the appearance of superconductivity. The absence of the highly insulating state expected for Mott insulators around y ~ 0 suggests that T'-(La,Y)2CuO4 has intrinsic carriers. The role of residual apical oxygen, which is detrimental to superconductivity, is also discussed based on the resistivity-temperature characteristics in insufficiently reduced samples.
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Submitted 28 January, 2005;
originally announced January 2005.
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Ce doping in T-La2CuO4 films: Broken electron-hole symmetry for high-Tc superconductivity
Authors:
A. Tsukada,
H. Yamamoto,
M. Naito
Abstract:
We attempted Ce doping in La2CuO4 with the K2NiF4 (T) structure by molecular beam epitaxy. At low growth temperature and with an appropriate substrate choice, we found that Ce can be incorporated into the K2NiF4 lattice up to x ~ 0.06, which had not yet been realized in bulk synthesis. The doping of Ce makes T-La2-xCexCuO4 more insulating, which is in sharp contrast to Ce doping in La2CuO4 with…
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We attempted Ce doping in La2CuO4 with the K2NiF4 (T) structure by molecular beam epitaxy. At low growth temperature and with an appropriate substrate choice, we found that Ce can be incorporated into the K2NiF4 lattice up to x ~ 0.06, which had not yet been realized in bulk synthesis. The doping of Ce makes T-La2-xCexCuO4 more insulating, which is in sharp contrast to Ce doping in La2CuO4 with the Nd2CuO4 structure, which makes the compounds superconducting. The observed smooth increase in resistivity from hole-doped side (T-La2-xSrxCuO4) to electron-doped side (T-La2-xCexCuO4) indicates that electron-hole symmetry is broken in the T-phase materials.
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Submitted 28 January, 2005;
originally announced January 2005.
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Origin of superconducting carriers in "non-doped" T'- (La,RE)2CuO4 (RE = Sm, Eu, Gd, Tb, Lu, and Y) prepared by molecular beam epitaxy
Authors:
M. Noda,
A. Tsukada,
H. Yamamoto,
M. Naito
Abstract:
We have performed a systematic investigation of the variations of the lattice constants with substituent rare-earth element concentration x in the nominally undoped superconductors T'-(La3+)2-x(RE3+)xCuO4 (RE = Sm, Eu, Gd, Tb, Lu, and Y), which we have recently discovered using MBE. The results show both the in-plane and out-of-plane lattice constants (a0 and c0) linearly decrease with x, whose…
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We have performed a systematic investigation of the variations of the lattice constants with substituent rare-earth element concentration x in the nominally undoped superconductors T'-(La3+)2-x(RE3+)xCuO4 (RE = Sm, Eu, Gd, Tb, Lu, and Y), which we have recently discovered using MBE. The results show both the in-plane and out-of-plane lattice constants (a0 and c0) linearly decrease with x, whose extrapolation to x = 2 agrees well with the reported a0 and c0 values for each T'-RE2CuO4. This behavior is what one would expect simply from the ionic size difference between La3+ and RE3+. The absence of the Cu-O bond stretching due to electron-doping, which is commonly observed in electron-doped T' and infinite-layer superconductors, implies that electron doping via oxygen deficiencies is, at least, not a main source of charge carriers.
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Submitted 28 January, 2005;
originally announced January 2005.
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New class of T-prime-structure cuprate superconductors
Authors:
A. Tsukada,
Y. Krockenberger,
M. Noda,
H. Yamamoto,
D. Manske,
L. Alff,
M. Naito
Abstract:
High-temperature superconductivity has been discovered in La2-xBaxCuO4 [1], a compound that derives from the undoped La2CuO4 crystallizing in the perovskite T-structure. In this structure oxygen octahedra surround the copper ions. It is common knowledge that charge carriers induced by doping in such an undoped antiferromagnetic Mott-insulator lead to high-temperature superconductivity [2- 4]. Th…
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High-temperature superconductivity has been discovered in La2-xBaxCuO4 [1], a compound that derives from the undoped La2CuO4 crystallizing in the perovskite T-structure. In this structure oxygen octahedra surround the copper ions. It is common knowledge that charge carriers induced by doping in such an undoped antiferromagnetic Mott-insulator lead to high-temperature superconductivity [2- 4]. The undoped material La2CuO4 is also the basis of the electron-doped cuprate superconductors [5] of the form La2-xCexCuO4+y [6,7] which however crystallize in the so called T-prime-structure, i.e. without apical oxygen above or below the copper ions of the CuO2-plane. It is well known that for La2-xCexCuO4+y the undoped T-prime-structure parent compound cannot be prepared due to the structural phase transition back into the T-structure occuring around x ~ 0.05. Here, we report that if La is substituted by RE = Y, Lu, Sm, Eu, Gd, or Tb, which have smaller ionic radii but have the same valence as La, nominally undoped La2-xRExCuO4 can be synthesized by molecular beam epitaxy in the T-prime-structure. The second important result is that all these new T-prime-compounds are superconductors with fairly high critical temperatures up to 21 K. For this new class of cuprates La2-xRExCuO4, which forms the T-prime-parent compounds of the La-based electron doped cuprates, we have not been able to obtain the Mott-insulating ground state for small x before the structural phase transition into the T-structure takes place.
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Submitted 24 January, 2005;
originally announced January 2005.
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All-MgB2 Josephson tunnel junctions
Authors:
K. Ueda,
S. Saito,
K. Semba,
T. Makimoto,
M. Naito
Abstract:
Sandwich-type all-MgB2 Josephson tunnel junctions (MgB2/AlOx/MgB2) have been fabricated for the first time with as-grown MgB2 films formed by molecular beam epitaxy. The junctions exhibit substantial superconducting current (IcRN product ~ 0.8 mV at 4.2K), a well-defined superconducting gap (delta = ~2.3 mV), and clear Fraunhofer patterns. The superconducting gap voltage of delta agrees well wit…
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Sandwich-type all-MgB2 Josephson tunnel junctions (MgB2/AlOx/MgB2) have been fabricated for the first time with as-grown MgB2 films formed by molecular beam epitaxy. The junctions exhibit substantial superconducting current (IcRN product ~ 0.8 mV at 4.2K), a well-defined superconducting gap (delta = ~2.3 mV), and clear Fraunhofer patterns. The superconducting gap voltage of delta agrees well with the smaller gap in the multi-gap scenario. The results demonstrate that MgB2 has great promise for superconducting electronics that can be operated at T ~ 20 K.
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Submitted 14 December, 2004;
originally announced December 2004.
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Low Microwave Surface Resistance in NdBa2Cu3O7-d Films Grown by Molecular Beam Epitaxy
Authors:
Jose Kurian,
Michio Naito
Abstract:
We report the growth of NdBa2Cu3O7-d films on (100) MgO substrate by Molecular Beam Epitaxy (MBE). Large area NdBa2Cu3O7-d films with homogeneous superconducting properties were grown by precise control of stoichiometry and the optimisation of growth parameters. The stoichiometric ratio of Nd:Ba:Cu close to 1:2:3 yields films with TC of 94 K and JC values above 3.5 MA/cm2 at 77 K on bare MgO sub…
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We report the growth of NdBa2Cu3O7-d films on (100) MgO substrate by Molecular Beam Epitaxy (MBE). Large area NdBa2Cu3O7-d films with homogeneous superconducting properties were grown by precise control of stoichiometry and the optimisation of growth parameters. The stoichiometric ratio of Nd:Ba:Cu close to 1:2:3 yields films with TC of 94 K and JC values above 3.5 MA/cm2 at 77 K on bare MgO substrate. The NdBa2Cu3O7-d films grown under optimised conditions had excellent in-plane texture and good metallicity. The most significant characteristic of our MBE grown NdBa2Cu3O7-d films is the very low microwave surface resistance values at all temperature range compared to its YBa2Cu3O7-d counterpart with typical value of ~870 micro-ohm at 77 K & 22 GHz. Our results on the MBE grown NdBa2Cu3O7-d films suggests that NdBa2Cu3O7-d is a superior choice for the realisation of commercial microwave applications.
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Submitted 19 October, 2004;
originally announced October 2004.
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Growth and Properties of Superconducting MgB2 Thin Films
Authors:
Michio Naito,
Kenji Ueda
Abstract:
This review article describes the developments over the last 30 months in the thin film growth and junction fabrication of superconducting MgB2, including a brief summary the chemistry and physics of MgB2.
This review article describes the developments over the last 30 months in the thin film growth and junction fabrication of superconducting MgB2, including a brief summary the chemistry and physics of MgB2.
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Submitted 12 February, 2004;
originally announced February 2004.
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New superconduting cuprates with no effective doping: T'-(La3+)2-x(RE3+)xCuO4
Authors:
A. Tsukada,
Y. Krockenberger,
H. Yamamoto,
M. Naito
Abstract:
We report the synthesis of new superconducting cuprates T'-La2-xRExCuO4 (RE = Sm, Eu, Tb, Lu, and Y) using molecular beam epitaxy. The new superconductors have no effective dopant, at least nominally. The substitution of isovalent RE for La was essentially performed to stabilize the T' phase of La2CuO4 instead of the T phase. The maximum Tconset is ~ 25 K and Tczero is ~ 21 K. The keys to our di…
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We report the synthesis of new superconducting cuprates T'-La2-xRExCuO4 (RE = Sm, Eu, Tb, Lu, and Y) using molecular beam epitaxy. The new superconductors have no effective dopant, at least nominally. The substitution of isovalent RE for La was essentially performed to stabilize the T' phase of La2CuO4 instead of the T phase. The maximum Tconset is ~ 25 K and Tczero is ~ 21 K. The keys to our discovery are (1) the preparation of high-crystalline-quality La-based T' films by low-temperature (~ 650C) thin film processes, and (2) more thorough removal of impurity oxygen at the apical site, which is achieved by the larger in-plane lattice constant (a0) of T'-La2-xRExCuO4 than other T'-Ln2CuO4 (Ln = Pr, Nd, Sm, Eu, Gd) with the aid of large surface-to-volume ratio of thin films.
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Submitted 8 January, 2004;
originally announced January 2004.
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In-situ angle-resolved photoemission study of MBE-grown (La, Ce)2CuO4 thin films
Authors:
Hideki Yamamoto,
Michio Naito,
Akio Tsukada,
Satoru Suzuki
Abstract:
We have performed in-situ angle-resolved photoemission spectroscopy on the electron doped cuprate superconductor La2-xCexCuO4 (x = 0.1) using high-quality films grown by molecular beam epitaxy. The obtained photoemission spectra were free from dirt peaks. In addition, the time evolution of the spectra due to impurity adsorption is rather gradual, and the sample surface is stable even at ambient…
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We have performed in-situ angle-resolved photoemission spectroscopy on the electron doped cuprate superconductor La2-xCexCuO4 (x = 0.1) using high-quality films grown by molecular beam epitaxy. The obtained photoemission spectra were free from dirt peaks. In addition, the time evolution of the spectra due to impurity adsorption is rather gradual, and the sample surface is stable even at ambient temperature, which is in contrast with previous reports on bulk Nd2-xCexCuO4 (NCCO) single crystals. The energy distribution curves show clear dispersions near the Fermi energy (EF) with some EF crossings. The resultant Fermi surface is hole-like and centered around (pi, pi), which essentially agrees with that predicted for NCCO by band calculations and also with the experimentally determined Fermi surface of optimally doped NCCO (x = 0.15).
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Submitted 8 January, 2004;
originally announced January 2004.
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New superconducting T'-(La3+)2-x(RE3+)xCuO4 with isovalent doping (RE = Sm, Eu, Tb, Lu, and Y)
Authors:
A. Tsukada,
Y. Krockenberger,
H. Yamamoto,
M. Naito
Abstract:
We report the synthesis of new superconducting cuprates T'-La2-xRExCuO4 (RE = Sm, Eu, Tb, Lu, and Y) using molecular beam epitaxy. The new superconductors have no effective dopant, at least nominally. The substitution of isovalent RE for La was essentially performed to stabilize the T' phase of La2CuO4 instead of the T phase. The maximum Tconset is ~ 25 K and Tczero is ~ 21 K. The keys to our di…
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We report the synthesis of new superconducting cuprates T'-La2-xRExCuO4 (RE = Sm, Eu, Tb, Lu, and Y) using molecular beam epitaxy. The new superconductors have no effective dopant, at least nominally. The substitution of isovalent RE for La was essentially performed to stabilize the T' phase of La2CuO4 instead of the T phase. The maximum Tconset is ~ 25 K and Tczero is ~ 21 K. The keys to our discovery are (1) the preparation of high-crystalline-quality La-based T' films by low-temperature (~650C) thin film processes, and (2) more thorough removal of impurity oxygen at the apical site, which is achieved by the larger in-plane lattice constant (a0) of T'-La2-xRExCuO4 than other T'-Ln2CuO4 (Ln = Pr, Nd, Sm, Eu, Gd) with the aid of large surface-to-volume ratio of thin films. The photoemission spectra suggest that the end member compounds of the T' system may not be a Mott insulator.
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Submitted 17 November, 2003;
originally announced November 2003.
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Doping dependence of the gap anisotropy in LCCO studied by millimeter-wave spectroscopy
Authors:
A. V. Pronin,
A. Pimenov,
A. Loidl,
A. Tsukada,
M. Naito
Abstract:
We measure the penetration depth of optimally doped and underdoped La2-xCexCuO4 in the millimeter frequency domain (4 - 7 cm-1) and for temperatures 2 K < T < 300 K. The penetration depth as function of temperature reveals significant changes on electron doping. It shows quadratic temperature dependence in underdoped samples, but increases almost exponentially at optimal doping. Significant chan…
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We measure the penetration depth of optimally doped and underdoped La2-xCexCuO4 in the millimeter frequency domain (4 - 7 cm-1) and for temperatures 2 K < T < 300 K. The penetration depth as function of temperature reveals significant changes on electron doping. It shows quadratic temperature dependence in underdoped samples, but increases almost exponentially at optimal doping. Significant changes in the gap anisotropy (or even in the gap symmetry) may account for this transition.
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Submitted 24 June, 2003;
originally announced June 2003.
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Magnetic Penetration Depth Measurements of Pr$_{2-x}$Ce$_x$CuO$_{4-δ}$ Films on Buffered Substrates: Evidence for a Nodeless Gap
Authors:
Mun-Seog Kim,
John A. Skinta,
Thomas R. Lemberger,
A. Tsukada,
M. Naito
Abstract:
We report measurements of the inverse squared magnetic penetration depth, $λ^{-2}(T)$, in Pr$_{2-x}$Ce$_{x}$CuO$_{4-δ}$ ($0.115 \leq x \leq 0.152$) superconducting films grown on SrTiO$_3$ (001) substrates coated with a buffer layer of insulating Pr$_{2}$CuO$_{4}$. $λ^{-2}(0)$, $T_c$ and normal-state resistivities of these films indicate that they are clean and homogeneous. Over a wide range of…
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We report measurements of the inverse squared magnetic penetration depth, $λ^{-2}(T)$, in Pr$_{2-x}$Ce$_{x}$CuO$_{4-δ}$ ($0.115 \leq x \leq 0.152$) superconducting films grown on SrTiO$_3$ (001) substrates coated with a buffer layer of insulating Pr$_{2}$CuO$_{4}$. $λ^{-2}(0)$, $T_c$ and normal-state resistivities of these films indicate that they are clean and homogeneous. Over a wide range of Ce doping, $0.124\leq x \leq 0.144$, $λ^{-2}(T)$ at low $T$ is flat: it changes by less than 0.15% over a factor of 3 change in $T$, indicating a gap in the superconducting density of states. Fits to the first 5% decrease in $λ^{-2}(T)$ produce values of the minimum superconducting gap in the range of $0.29\leqΔ_{\rm min}/k_BT_c\leq1.01$.
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Submitted 14 February, 2003; v1 submitted 4 February, 2003;
originally announced February 2003.
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Superconducting Density of States from the Magnetic Penetration Depth of Electron-Doped Cuprates La_{2-x}Ce_xCuO_{4-y} and Pr_{2-x}Ce_xCuO_{4-y}
Authors:
John A. Skint,
Mun-Seog Kim,
Thomas R. Lemberger,
T. Greibe,
M. Naito
Abstract:
From measurements of the magnetic penetration depth, $λ(T)$, from 1.6 K to $T_c$ in films of electron-doped cuprates La$_{2-x}$Ce$_x$CuO$_{4-y}$ and Pr$_{2-x}$Ce$_x$CuO$_{4-y}$ we obtain the normalized density of states, $N_s(E)$ at T=0 by using a simple model. In this framework, the flat behavior of $λ^{-2}(T)$ at low $T$ implies $N_s(E)$ is small, possibly gapped, at low energies. The upward c…
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From measurements of the magnetic penetration depth, $λ(T)$, from 1.6 K to $T_c$ in films of electron-doped cuprates La$_{2-x}$Ce$_x$CuO$_{4-y}$ and Pr$_{2-x}$Ce$_x$CuO$_{4-y}$ we obtain the normalized density of states, $N_s(E)$ at T=0 by using a simple model. In this framework, the flat behavior of $λ^{-2}(T)$ at low $T$ implies $N_s(E)$ is small, possibly gapped, at low energies. The upward curvature in $λ^{-2}(T)$ near $T_c$ seen in overdoped films implies that superfluid comes from an anomalously small energy band within about $3k_BT_c$ of the Fermi surface.
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Submitted 13 January, 2003;
originally announced January 2003.
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Kondo effect in underdoped n-type superconductors
Authors:
Tsuyoshi Sekitani,
Michio Naito,
Noboru Miura
Abstract:
We present high-field magnetotransport properties of high-quality single-crystalline thin films of heavily underdoped nonsuperconducting (La,Ce)2CuO4, (Pr,Ce)2CuO4, and (Nd,Ce)2CuO4. All three materials show identical behavior. They are metallic at high temperatures and show an insulating upturn at low temperatures. The insulating upturn has a log T dependence, but saturates toward the lowest te…
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We present high-field magnetotransport properties of high-quality single-crystalline thin films of heavily underdoped nonsuperconducting (La,Ce)2CuO4, (Pr,Ce)2CuO4, and (Nd,Ce)2CuO4. All three materials show identical behavior. They are metallic at high temperatures and show an insulating upturn at low temperatures. The insulating upturn has a log T dependence, but saturates toward the lowest temperatures. Notably, the insulating upturn tends to be suppressed by applying magnetic fields. This negative magnetoresistance has a log B dependence, and its anisotropy shows non simple behavior. We discuss these findings from the viewpoints of Kondo scattering and also two-dimensional weak localization, and demonstrate Kondo scattering as a more plausible explanation. The Kondo scatters are identified as Cu2+ spins in the CuO2 planes.
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Submitted 8 January, 2003;
originally announced January 2003.
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Far-infrared and submillimeter-wave conductivity in electron-doped cuprate La_{2-x}Ce_xCuO_4
Authors:
A. Pimenov,
A. V. Pronin,
A. Loidl,
A. Tsukada,
M. Naito
Abstract:
We performed far-infrared and submillimeter-wave conductivity experiments in the electron-doped cuprate La_{2-x}Ce_xCuO_4 with x = 0.081 (underdoped regime, T_c = 25 K). The onset of the absorption in the superconducting state is gradual in frequency and is inconsistent with the isotropic s-wave gap. Instead, a narrow quasiparticle peak is observed at zero frequency and a second peak at finite f…
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We performed far-infrared and submillimeter-wave conductivity experiments in the electron-doped cuprate La_{2-x}Ce_xCuO_4 with x = 0.081 (underdoped regime, T_c = 25 K). The onset of the absorption in the superconducting state is gradual in frequency and is inconsistent with the isotropic s-wave gap. Instead, a narrow quasiparticle peak is observed at zero frequency and a second peak at finite frequencies, clear fingerprints of the conductivity in a d-wave superconductor. A far-infrared conductivity peak can be attributed to 4Delta_0, or to 2Delta_0 + Delta_spin, where Delta_spin is the resonance frequency of the spin-fluctuations. The infrared conductivity as well as the suppression of the quasiparticle scattering rate below T_c are qualitatively similar to the results in the hole-doped cuprates.
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Submitted 17 December, 2002;
originally announced December 2002.
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In-situ growth of superconducting MgB2 thin films by molecular beam epitaxy
Authors:
K Ueda,
M. Naito
Abstract:
The in-situ growth of superconducting MgB2 thin films was examined from various perspectives. The paper discusses (1) growth temperature, (2) the effect of excess Mg, (3) the effect of residual gas during growth, (4) the effect of in-situ annealing, (5) thickness dependence and (6) the effect of substrates. Our results provide a guide to the preparation of high-quality superconducting MgB2 films…
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The in-situ growth of superconducting MgB2 thin films was examined from various perspectives. The paper discusses (1) growth temperature, (2) the effect of excess Mg, (3) the effect of residual gas during growth, (4) the effect of in-situ annealing, (5) thickness dependence and (6) the effect of substrates. Our results provide a guide to the preparation of high-quality superconducting MgB2 films for potential electronics applications.
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Submitted 11 October, 2002;
originally announced October 2002.
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Phase control of La2CuO4 in thin-film synthesis
Authors:
A. Tsukada,
T. Greibe,
M. Naito
Abstract:
The lanthanum copper oxide, La2CuO4, which is an end member of the prototype high-Tc superconductors (La,Sr)2CuO4 and (La,Ba)2CuO4, crystallizes in the "K2NiF4" structure in high-temperature bulk synthesis. The crystal chemistry, however, predicts that La2CuO4 is at the borderline of the K2NiF4 stability and that it can crystallize in the Nd2CuO4 structure at low synthesis temperatures. In this…
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The lanthanum copper oxide, La2CuO4, which is an end member of the prototype high-Tc superconductors (La,Sr)2CuO4 and (La,Ba)2CuO4, crystallizes in the "K2NiF4" structure in high-temperature bulk synthesis. The crystal chemistry, however, predicts that La2CuO4 is at the borderline of the K2NiF4 stability and that it can crystallize in the Nd2CuO4 structure at low synthesis temperatures. In this article we demonstrate that low-temperature thin-film synthesis actually crystallizes La2CuO4 in the Nd2CuO4 structure. We also show that the phase control of "K2NiF4"-type La2CuO4 versus "Nd2CuO4"-type La2CuO4 can be achieved by varying the synthesis temperature and using different substrates.
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Submitted 12 September, 2002;
originally announced September 2002.
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Phase control in La-214 epitaxial thin films
Authors:
M. Naito,
A. Tsukada,
T. Greibe,
H. Sato
Abstract:
The lanthanide (Ln) copper oxides of the general chemical formula Ln2CuO4 take two different crystal structures: K2NiF4(T) and Nd2CuO4(T'). La2CuO4 takes the T structure by high-temperature bulk processes. The "thermal expansion mismatch" between the La-O and Cu-O bonds predicts that the T' phase of La2CuO4 can be stabilized at synthesis temperatures below 425 deg. Such low synthesis temperature…
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The lanthanide (Ln) copper oxides of the general chemical formula Ln2CuO4 take two different crystal structures: K2NiF4(T) and Nd2CuO4(T'). La2CuO4 takes the T structure by high-temperature bulk processes. The "thermal expansion mismatch" between the La-O and Cu-O bonds predicts that the T' phase of La2CuO4 can be stabilized at synthesis temperatures below 425 deg. Such low synthesis temperatures are difficult to access by bulk processes, but easy by thin-film processes. We have surveyed growth parameters in molecular beam epitaxy, and succeeded in the selective stabilization of T- and T'-La2CuO4. From our observations, it turns out that the growth temperature as well as the substrate play a crucial role in the selective stabilization: the T' structure is stabilized at low growth temperatures (< 600 deg.) and with substrates of a < 3.70 Ang or a > 3.90 Ang, while the T structure is stabilized at high growth temperatures (> 650 deg) or with substrates of a ~ 3.70 - 3.85 Ang. We have also been attempting hole (Ca, Sr, and Ba) and electron (Ce) doping into both of T- and T'-La2CuO4. In T-La2CuO4, hole doping produces the well-known LSCO and LBCO. Surprisingly, contrary to the empirical law, electron doping is also possible up to x ~ 0.06 - 0.08, although the films do not show superconductivity. In T'-La2CuO4, electron doping produces superconducting T'-(La,Ce)2CuO4 with Tc ~ 30 K, although hole doping has as yet been unsuccessful.
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Submitted 12 September, 2002;
originally announced September 2002.
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On the peak in the far-infrared conductivity of strongly anisotropic cuprates
Authors:
A. Pimenov,
A. V. Pronin,
A. Loidl,
A. Tsukada,
M. Naito
Abstract:
We investigate the far-infrared and submillimeter-wave conductivity of electron-doped La_(2-x)Ce_xCuO_4 tilted 1 degree off from the ab-plane. The effective conductivity measured for this tilt angle reveals an intensive peak at finite frequency (ν~ 50 cm{-1}) due to a mixing of the in-plane and out-of-plane responses. The peak disappears for the pure in-plane response and transforms to the Drude…
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We investigate the far-infrared and submillimeter-wave conductivity of electron-doped La_(2-x)Ce_xCuO_4 tilted 1 degree off from the ab-plane. The effective conductivity measured for this tilt angle reveals an intensive peak at finite frequency (ν~ 50 cm{-1}) due to a mixing of the in-plane and out-of-plane responses. The peak disappears for the pure in-plane response and transforms to the Drude-like contribution. Comparative analysis of the mixed and the in-plane contributions allows to extract the c-axis conductivity which shows a Josephson plasma resonance at 11.7 cm{-1} in the superconducting state.
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Submitted 9 September, 2002;
originally announced September 2002.
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Tunnel junctions on as-grown superconducting MgB2 thin films
Authors:
K. Ueda,
M. Naito
Abstract:
We demonstrate that good superconductor/insulator/normal-metal tunnel junctions can be fabricated on as-grown superconducting MgB2 thin films. The as-grown films were prepared by coevaporation at low growth temperatures of around 280deg. The insulating barrier was formed by an Mg overlayer, which is subsequently oxidized in air. The tunneling spectra for Au/MgOx/MgB2 junctions showed a reproduci…
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We demonstrate that good superconductor/insulator/normal-metal tunnel junctions can be fabricated on as-grown superconducting MgB2 thin films. The as-grown films were prepared by coevaporation at low growth temperatures of around 280deg. The insulating barrier was formed by an Mg overlayer, which is subsequently oxidized in air. The tunneling spectra for Au/MgOx/MgB2 junctions showed a reproducible and well-defined superconducting gap (delta= ~ 2.5 meV). The resultant 2delta/ kBTc was significantly smaller than the predicted BCS value of 3.52.
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Submitted 1 October, 2002; v1 submitted 28 August, 2002;
originally announced August 2002.
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Growth of superconducting MgB2 thin films
Authors:
K. Ueda,
M. Naito
Abstract:
This is the first review on superconducting MgB2 thin films as far as we know.
This is the first review on superconducting MgB2 thin films as far as we know.
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Submitted 18 March, 2002; v1 submitted 8 March, 2002;
originally announced March 2002.
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Interplay of Cooper and Kondo singlet formations in high-TC cuprates
Authors:
T. Sekitani,
M. Naito,
H. Sato,
N. Miura
Abstract:
We performed high-field magnetotransport experiments up to 50 T on strained La1.85Sr0.15CuO4 films. Two films with different strain, one expansively strained with Tc ~ 26 K and the other compressively strained with Tc ~ 44 K, show a striking contrast in the normal-state transport: the former has a prominent low-temperature upturn while the latter has not. Identifying the low-temperature upturn a…
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We performed high-field magnetotransport experiments up to 50 T on strained La1.85Sr0.15CuO4 films. Two films with different strain, one expansively strained with Tc ~ 26 K and the other compressively strained with Tc ~ 44 K, show a striking contrast in the normal-state transport: the former has a prominent low-temperature upturn while the latter has not. Identifying the low-temperature upturn as due to the Kondo effect, our experimental observations indicate that Cooper and Kondo singlet formations are competing in high- Tc cuprates: Kondo singlet formation hinders Cooper pair formation. Based on these results, we propose a new scenario for the electronic phase diagram of La2-xSrxCuO4. According to our scenario, underdoped insulating La2-xSrxCuO4 can be regarded as a "Kondo insulator".
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Submitted 25 November, 2001; v1 submitted 22 November, 2001;
originally announced November 2001.
