Showing 1–2 of 2 results for author: Nair, K S

Charge-Trapping-Induced Compensation of the Ferroelectric Polarization in FTJs: Optimal Conditions for a Synaptic Device Operation

Authors: R. Fontanini, M. Segatto, K. S. Nair, M. Holzer, F. Driussi, I. Häusler, C. T. Koch, C. Dubourdieu, V. Deshpande, D. Esseni

Abstract: In this work, we present a clear evidence, based on numerical simulations and experiments, that the polarization compensation due to trapped charge strongly influences the ON/ OFF ratio in Hf 0.5 Zr 0.5 O 2 (HZO)-based ferroelectric tunnel junctions (FTJs). Furthermore, we identify and explain compensation conditions that enable an optimal operation of FTJs. Our results provide both key physical i… ▽ More In this work, we present a clear evidence, based on numerical simulations and experiments, that the polarization compensation due to trapped charge strongly influences the ON/ OFF ratio in Hf 0.5 Zr 0.5 O 2 (HZO)-based ferroelectric tunnel junctions (FTJs). Furthermore, we identify and explain compensation conditions that enable an optimal operation of FTJs. Our results provide both key physical insights and design guidelines for the operation of FTJs as multilevel synaptic devices. △ Less

Submitted 4 September, 2023; originally announced September 2023.

CMOS back-end-of-line compatible ferroelectric tunnel junction devices

Authors: Veeresh Deshpande, Keerthana Shajil Nair, Marco Holzer, Sourish Banerjee, Catherine Dubourdieu

Abstract: Ferroelectric tunnel junction devices based on ferroelectric thin films of solid solutions of hafnium dioxide can enable CMOS integration of ultra-low power ferroelectric devices with potential for memory and emerging computing schemes such as in-memory computing and neuromorphic applications. In this work, we present ferroelectric tunnel junctions based on Hf$_{0.5}$Zr$_{0.5}$O$_{2}$ with materia… ▽ More Ferroelectric tunnel junction devices based on ferroelectric thin films of solid solutions of hafnium dioxide can enable CMOS integration of ultra-low power ferroelectric devices with potential for memory and emerging computing schemes such as in-memory computing and neuromorphic applications. In this work, we present ferroelectric tunnel junctions based on Hf$_{0.5}$Zr$_{0.5}$O$_{2}$ with materials and processes compatible with CMOS back-end-of-line integration. We show a device architecture based on W-Hf$_{0.5}$Zr$_{0.5}$O$_{2}$-Al$_{2}$O$_{3}$-TiN stacks featuring low temperature annealing at 400°C with performance comparable to those obtained with higher temperature annealing conditions. △ Less

Submitted 24 August, 2021; originally announced August 2021.

Journal ref: Solid-State Electronics, Volume 186, 108054 (2021)