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Impact of external magnetic fields on STT-MRAM
Authors:
Bernard Dieny,
Sanjeev Aggarwal,
Vinayak Bharat Naik,
Sebastien Couet,
Thomas Coughlin,
Shunsuke Fukami,
Kevin Garello,
Jack Guedj,
Jean Anne C. Incorvia,
Laurent Lebrun,
Kyung-Jin Lee,
Daniele Leonelli,
Yonghwan Noh,
Siamak Salimy,
Steven Soss,
Luc Thomas,
Weigang Wang,
Daniel Worledge
Abstract:
This application note discusses the working principle of spin-transfer torque magnetoresistive random access memory (STT-MRAM) and the impact that magnetic fields can have on STT-MRAM operation. Sources of magnetic field and typical magnitudes of magnetic fields are given. Based on the magnitude of commonly encountered external magnetic fields, we show below that magnetic immunity of STT-MRAM is s…
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This application note discusses the working principle of spin-transfer torque magnetoresistive random access memory (STT-MRAM) and the impact that magnetic fields can have on STT-MRAM operation. Sources of magnetic field and typical magnitudes of magnetic fields are given. Based on the magnitude of commonly encountered external magnetic fields, we show below that magnetic immunity of STT-MRAM is sufficient for most uses once the chip is mounted on a printed circuit board (PCB) or inserted in its working environment. This statement is supported by the experience acquired during 60 years of use of magnetic hard disk drives (HDD) including 20 years of HDD with readers comprising magnetic tunnel junctions, 20+ years of use of magnetic field sensors as position encoders in automotive industry and 15+ years of use of MRAM. Mainly during chip handling does caution need to be exercised to avoid exposing the chip to excessively high magnetic fields.
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Submitted 9 September, 2024;
originally announced September 2024.
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Electric-field-induced strain-mediated magnetoelectric effect in CoFeB-MgO magnetic tunnel junctions
Authors:
V. B. Naik,
H. Meng,
J. X. Xiao,
R. S. Liu,
A. Kumar,
K. Y. Zeng,
P. Luo,
S. Yap
Abstract:
Magnetoelectric coupling between magnetic and electric dipoles is one of the cornerstones of modern physics towards developing the most energy-efficient magnetic data storage. Conventionally, magnetoelectric coupling is achieved in single-phase multiferroics or in magnetoelectric composite nanostructures consisting of ferromagnetic and ferroelectric/piezoelectric materials. Here, we demonstrate an…
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Magnetoelectric coupling between magnetic and electric dipoles is one of the cornerstones of modern physics towards developing the most energy-efficient magnetic data storage. Conventionally, magnetoelectric coupling is achieved in single-phase multiferroics or in magnetoelectric composite nanostructures consisting of ferromagnetic and ferroelectric/piezoelectric materials. Here, we demonstrate an electric-field-induced strain-mediated magnetoelectric effect in ultrathin CoFeB/MgO magnetic tunnel junction employing non-piezoelectric material, which is a vitally important structure for spintronic devices, by using dynamical magnetoelectric and piezoresponse force microscopy measurement techniques. We show that the applied electric-field induces strain in a few atomic layers of dielectric MgO which is transferred to magnetostrictive CoFeB layer, resulting in a magnetoelectric effect of magnitude up to 80.8 V cm-1 Oe-1 under -0.5 V. The demonstrated strain-mediated magnetoelectric effect with an electric field in magnetic tunnel junctions is a significant step towards exploring magnetoelectrically controlled spintronic devices for low-power and high density magnetic data storage applications.
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Submitted 15 November, 2013;
originally announced November 2013.
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Inverse magnetocaloric effect in ferromagnetic Sm0.6-xLaxSr0.4MnO3 due to 4f-3d exchange interaction
Authors:
V. B. Naik,
R. Mahendiran
Abstract:
We report magnetic and magnetocaloric properties of Sm0.6-xLaxSr0.4MnO3 (x = 0-0.6). A rapid increase around TC and an anomalous peak at a temperature T*<<TC occur in magnetization which lead to normal and inverse magnetocaloric effects (MCE), respectively. While TC increases with increasing x (TC=118 K for x=0 and TC=363 K for x=0.6), T* increases from 30 K (x=0) to 120 K (x=0.4) and then decreas…
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We report magnetic and magnetocaloric properties of Sm0.6-xLaxSr0.4MnO3 (x = 0-0.6). A rapid increase around TC and an anomalous peak at a temperature T*<<TC occur in magnetization which lead to normal and inverse magnetocaloric effects (MCE), respectively. While TC increases with increasing x (TC=118 K for x=0 and TC=363 K for x=0.6), T* increases from 30 K (x=0) to 120 K (x=0.4) and then decreases to 105 K (x=0.5). The \DeltaSm reaches +1.07 Jkg-1K-1 at 10 K and -4 Jkg-1K-1 around TC in x=0.4 for ΔH=5T. The inverse MCE is attributed to antiferromagnetic coupling between Sm-4f and Mn-3d magnetic moments.
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Submitted 16 July, 2011;
originally announced July 2011.
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A large magnetoinductance effect in La0.67Ba0.33MnO3
Authors:
V. B. Naik,
A. Rebello,
R. Mahendiran
Abstract:
We report four probe impedance of La0.67Ba0.33MnO3 at f = 100 kHz under different dc bias magnetic fields. The ac resistance (R) exhibits a peak around Tp = 325 K which is accompanied by a rapid increase and a peak in the reactance (X) in a zero field. The magnetoreactance exhibits a sharp peak close to Tp and its magnitude (= 60% in H = 1 kG) exceeds that of the ac magnetoresistance (= 5 % inH…
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We report four probe impedance of La0.67Ba0.33MnO3 at f = 100 kHz under different dc bias magnetic fields. The ac resistance (R) exhibits a peak around Tp = 325 K which is accompanied by a rapid increase and a peak in the reactance (X) in a zero field. The magnetoreactance exhibits a sharp peak close to Tp and its magnitude (= 60% in H = 1 kG) exceeds that of the ac magnetoresistance (= 5 % inH = 1 kG). It is suggested that the magnetoreactance arises from changes in the self inductance of the sample rather than the capacitance.
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Submitted 25 September, 2009;
originally announced September 2009.
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Electrical, magnetic, magnetodielectric and magnetoabsorption studies in multiferroic GaFeO3
Authors:
V. B. Naik,
R. Mahendiran
Abstract:
We report electrical, magnetic, magnetodielectric and magnetoabsorption properties of a polycrystalline GaFeO3. The resistivity measurement shows that the sample is highly insulating below 200 K and the resistivity above 200 K obey the Arrhenius law with an activation energy of Ea = 0.67 eV. An anomaly occurs in the temperature dependence of permittivity (e) near the ferrimagnetic transition tem…
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We report electrical, magnetic, magnetodielectric and magnetoabsorption properties of a polycrystalline GaFeO3. The resistivity measurement shows that the sample is highly insulating below 200 K and the resistivity above 200 K obey the Arrhenius law with an activation energy of Ea = 0.67 eV. An anomaly occurs in the temperature dependence of permittivity (e) near the ferrimagnetic transition temperature (TC = 228 K) in a zero magnetic field and it is suppressed under H = 60 mT which indicates a possible magnetoelectric coupling in GaFeO3 with a fractional change of de/e = -1.8% at 60 mT around TC. The coercivity (HC) of the sample increases dramatically with lowering temperature below 200 K from 0.1 T at 200 K to 0.9 T at 5 K. Magnetoabsorption was studied with a LC resonance technique and we found a close correlation between the shift in the resonance frequency due to applied magnetic field and the coercive field measured using dc magnetization measurements. Our results obtained with multiple techniques suggest that GaFeO3 is an interesting ferrimagnet with potential applications in future multiferroic devices.
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Submitted 25 September, 2009;
originally announced September 2009.
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Huge ac magnetoresistance in La0.7Sr0.3MnO3 in sub- kilo gauss magnetic fields
Authors:
A. Rebello,
V. B. Naik,
R. Mahendiran
Abstract:
We report dynamical magnetotransport in a ferromagnetic metallic oxide, La0.7Sr0.3MnO3 using the ac impedance technique. The temperature dependence of the ac resistance(R) and the inductive reactance (X) of the complex impedance (Z = R+jX) under different dc bias magnetic fields (Hdc = 0-1 kOe) were studied for different frequencies f = 0.1 to 5 MHz of alternating current. The zero field R, whic…
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We report dynamical magnetotransport in a ferromagnetic metallic oxide, La0.7Sr0.3MnO3 using the ac impedance technique. The temperature dependence of the ac resistance(R) and the inductive reactance (X) of the complex impedance (Z = R+jX) under different dc bias magnetic fields (Hdc = 0-1 kOe) were studied for different frequencies f = 0.1 to 5 MHz of alternating current. The zero field R, which decreases smoothly around the Curie temperature TC for f = 100 kHz, transforms into a peak for f = 0.5-5 MHz. The peak decreases in amplitude, broadens and shifts downward in temperature as the bias field increases. A huge ac magnetoresistance (= 45 % at f = 2 MHz) in a field of Hdc = 1 kOe is found and we attribute it to the magnetic field- induced enhancement in the skin depth and concomitant suppression of magnetic fluctuations near TC. Our study suggests that radio frequency magnetotransport provides an alternative strategy to enhance the magnetoresistance and probe the spin-charge coupling in manganites.
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Submitted 1 May, 2009;
originally announced May 2009.
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Magnetic and magnetoelectric studies in pure and cation doped BiFeO3
Authors:
V. B. Naik,
R. Mahendiran
Abstract:
We report magnetic and magnetoelectric studies on BiFeO3 and divalent cation (A) suvtitute Bi0.7A0.3FeO3 (A = Sr,Ba, and Sr0.5Ba0.5). It is shown that the rapid increase of magnetization at the Neel temperature (TN = 642 K) is suppressed in the co-doped compound A = Sr0.5Ba0.5. All the divalent subtituted compounds show enhanced magnetization and hysteresis loop. Both longitudinal and transverse…
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We report magnetic and magnetoelectric studies on BiFeO3 and divalent cation (A) suvtitute Bi0.7A0.3FeO3 (A = Sr,Ba, and Sr0.5Ba0.5). It is shown that the rapid increase of magnetization at the Neel temperature (TN = 642 K) is suppressed in the co-doped compound A = Sr0.5Ba0.5. All the divalent subtituted compounds show enhanced magnetization and hysteresis loop. Both longitudinal and transverse magnetoelectric coefficients were measured using the dynamical lock-in technique. The co-doped compound shows the highest magnetoelectric coefficient at room temperature although it is not the compound with the highest saturation magnetization. It is found that as the size of the A-site cation increses, the transverse magnetoelectric coeffient increases and exceeds the longitudinal magnetoelectric coefficient. It is suggested that changes in magnetic domain structure and magnetostriction are possible reasons for the observed changes in the magnetoelectric coefficients.
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Submitted 7 February, 2009;
originally announced February 2009.
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Magnetically tunable rf wave absorption in polycrystalline La0.67Ba0.33MnO3
Authors:
V. B. Naik,
R. Mahendiran
Abstract:
We investigated temperature and magnetic field dependent radio-frequency electromagnetic absorption in La0.67Ba0.33MnO3 by monitoring changes in resonance frequency (fr) and current (II) through a LC resonant circuit powered by an integrated chip oscillator. The ferromagnetic to paramagnetic transition at Tc in zero external magnetic field is accompanied by an abrupt increase in fr and I and the…
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We investigated temperature and magnetic field dependent radio-frequency electromagnetic absorption in La0.67Ba0.33MnO3 by monitoring changes in resonance frequency (fr) and current (II) through a LC resonant circuit powered by an integrated chip oscillator. The ferromagnetic to paramagnetic transition at Tc in zero external magnetic field is accompanied by an abrupt increase in fr and I and they are tunable by small external magnetic field. We observed fractional changes as much as 46% in delfr/fr and 23% in delI/I around Tc under H = 0.1 T that can be exploited for low magnetic field sensors and other applications.
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Submitted 29 December, 2008;
originally announced December 2008.
