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Above-room-temperature ferromagnetism in large-area epitaxial Fe3GaTe2/graphene van der Waals heterostructures
Authors:
Tauqir Shinwari,
Kacho Imtiyaz Ali Khan,
Hua Lv,
Atekelte Abebe Kassa,
Frans Munnik,
Simon Josephy,
Achim Trampert,
Victor Ukleev,
Chen Luo,
Florin Radu,
Jens Herfort,
Michael Hanke,
Joao Marcelo Jordao Lopes
Abstract:
Fe3GaTe2 (FGaT), a two-dimensional (2D) layered ferromagnetic metal, exhibits a high Curie temperature (TC) ~ 360 K along with strong perpendicular magnetic anisotropy (PMA), making it a promising material candidate for next-generation energy-efficient magnetic devices. However, the vast majority of studies on FGaT to date have been limited to millimeter-sized bulk crystals and exfoliated flakes,…
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Fe3GaTe2 (FGaT), a two-dimensional (2D) layered ferromagnetic metal, exhibits a high Curie temperature (TC) ~ 360 K along with strong perpendicular magnetic anisotropy (PMA), making it a promising material candidate for next-generation energy-efficient magnetic devices. However, the vast majority of studies on FGaT to date have been limited to millimeter-sized bulk crystals and exfoliated flakes, which are unsuitable for practical applications and integration into device processing. Also, its combination with other 2D materials to form van der Waals heterostructures has only been achieved by flake stacking. Consequently, the controlled large-scale growth of FGaT and related heterostructures remains largely unexplored. In this work, we demonstrate a breakthrough in the high-quality, large-scale growth of epitaxial FGaT thin films on single-crystalline graphene/SiC templates using molecular beam epitaxy. Structural characterization confirms the high crystalline quality of the continuous FGaT/graphene van der Waals heterostructures. Temperature-dependent magnetization and anomalous Hall measurements reveal robust PMA with an enhanced TC well above room temperature, reaching up to 400 K. Furthermore, X-ray absorption and X-ray magnetic circular dichroism spectra provide insight into the spin and orbital magnetic moment contributions, further validating the high TC and robust PMA. These findings are highly significant for the future development of high-performance spintronic devices based on 2D heterostructures, with potential applications in next-generation data storage, logic processing and quantum technologies.
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Submitted 9 May, 2025;
originally announced May 2025.
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Experimental electronic stopping cross section of tungsten for light ions in a large energy interval
Authors:
M. V. Moro,
P. M. Wolf,
B. Bruckner,
F. Munnik,
R. Heller,
P. Bauer,
D. Primetzhofer
Abstract:
Electronic stopping cross section of tungsten for light ions was experimentally measured in a wide energy interval (20 to 6000 keV for protons and 50 to 9000 keV for helium) in backscattering and transmission geometries. The measurements were carried out in three laboratories (Austria, Germany and Sweden) using five different set-ups, the stopping data deduced from different data sets showed excel…
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Electronic stopping cross section of tungsten for light ions was experimentally measured in a wide energy interval (20 to 6000 keV for protons and 50 to 9000 keV for helium) in backscattering and transmission geometries. The measurements were carried out in three laboratories (Austria, Germany and Sweden) using five different set-ups, the stopping data deduced from different data sets showed excellent agreement amongst each other, with total uncertainty varying within 1.5 - 3.8\% for protons and 2.2 - 5.5\% for helium, averaged over the respective energy range of each data set. The final data is compared to available data and to widely adopted semi-empirical and theoretical approaches, and found to be in good agreement with most adopted models at energies around and above the stopping maximum. Most importantly, our results extend the energy regime towards lower energies, and are thus of high technological relevance, e.g., in fusion research. At these low energies, our findings also revealed that tungsten - featured with fully and partially occupied f- and d-subshells, respectively, can be modeled as an electron gas for the energy loss process.
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Submitted 1 March, 2021;
originally announced March 2021.
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High carrier mobility epitaxially aligned PtSe2 films grown by one-zone selenization
Authors:
Michaela Sojkova,
Edmund Dobrocka,
Peter Hutar,
Valeria Taskova,
Lenka Pribusova-Slusna,
Roman Stoklas,
Igor Pis,
Federica Bondino,
Frans Munnik,
Martin Hulman
Abstract:
Few-layer PtSe2 films are promising candidates for applications in high-speed electronics, spintronics and photodetectors. Reproducible fabrication of large-area highly crystalline films is, however, still a challenge. Here, we report the fabrication of epitaxially aligned PtSe2 films using one-zone selenization of pre-sputtered platinum layers. We have studied the influence of the growth conditio…
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Few-layer PtSe2 films are promising candidates for applications in high-speed electronics, spintronics and photodetectors. Reproducible fabrication of large-area highly crystalline films is, however, still a challenge. Here, we report the fabrication of epitaxially aligned PtSe2 films using one-zone selenization of pre-sputtered platinum layers. We have studied the influence of the growth conditions on the structural and electrical properties of the films prepared from Pt layers with different initial thickness. The best results were obtained for PtSe2 layers grown at elevated temperatures (600 °C). The films exhibit signatures for a long-range in-plane ordering resembling an epitaxial growth. Charge carrier mobility determined by Hall-effect measurements is up to 24 cm2/V.s in these films.
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Submitted 22 September, 2020; v1 submitted 29 June, 2020;
originally announced June 2020.
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Astrophysical S-factor of the $^{14}\textrm{N(p,}γ\textrm{)}^{15}\textrm{O}$ reaction at 0.4 -- 1.3\,MeV
Authors:
L. Wagner,
S. Akhmadaliev,
M. Anders,
D. Bemmerer,
A. Caciolli,
St. Gohl,
M. Grieger,
A. Junghans,
M. Marta,
F. Munnik,
T. P. Reinhardt,
S. Reinicke,
M. Röder,
K. Schmidt,
R. Schwengner,
M. Serfling,
M. P. Takács,
T. Szücs,
A. Vomiero,
A. Wagner,
K. Zuber
Abstract:
The $^{14}\textrm{N(p,}γ\textrm{)}^{15}\textrm{O}$ reaction is the slowest reaction of the carbon-nitrogen cycle of hydrogen burning and thus determines its rate. The precise knowledge of its rate is required to correctly model hydrogen burning in asymptotic giant branch stars. In addition, it is a necessary ingredient for a possible solution of the solar abundance problem by using the solar…
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The $^{14}\textrm{N(p,}γ\textrm{)}^{15}\textrm{O}$ reaction is the slowest reaction of the carbon-nitrogen cycle of hydrogen burning and thus determines its rate. The precise knowledge of its rate is required to correctly model hydrogen burning in asymptotic giant branch stars. In addition, it is a necessary ingredient for a possible solution of the solar abundance problem by using the solar $^{13}$N and $^{15}$O neutrino fluxes as probes of the carbon and nitrogen abundances in the solar core. After the downward revision of its cross section due to a much lower contribution by one particular transition, capture to the ground state in $^{15}$O, the evaluated total uncertainty is still 8\%, in part due to an unsatisfactory knowledge of the excitation function over a wide energy range. The present work reports precise S-factor data at twelve energies between 0.357-1.292~MeV for the strongest transition, capture to the 6.79~MeV excited state in $^{15}$O, and at ten energies between 0.479-1.202~MeV for the second strongest transition, capture to the ground state in $^{15}$O. An R-matrix fit is performed to estimate the impact of the new data on astrophysical energies. The recently suggested slight enhancement of the 6.79~MeV transition at low energy could not be confirmed. The present extrapolated zero-energy S-factors are $S_{6.79}(0)$~=~1.24$\pm$0.11~keV~barn and $S_{\rm GS}(0)$~=~0.19$\pm$0.05~keV~barn.
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Submitted 29 November, 2017;
originally announced November 2017.
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Road to micron resolution with a color X-ray camera -- polycapillary optics characterization
Authors:
Stanisław H. Nowak,
Marko Petric,
Josef Buchriegler,
Aniouar Bjeoumikhov,
Zemfira Bjeoumikhov,
Johannes von Borany,
Frans Munnik,
Martin Radtke,
Axel D. Renno,
Uwe Reinholz,
Oliver Scharf,
Joachim Tilgner,
Reiner Wedell
Abstract:
In a color X-ray camera, spatial resolution is achieved by means of a polycapillary optic conducting X-ray photons from small regions on a sample to distinct energy dispersive pixels on a CCD matrix. At present, the resolution limit of color X-ray camera systems can go down to several microns and is mainly restricted to pixel dimensions. The recent development of an efficient subpixel resolution a…
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In a color X-ray camera, spatial resolution is achieved by means of a polycapillary optic conducting X-ray photons from small regions on a sample to distinct energy dispersive pixels on a CCD matrix. At present, the resolution limit of color X-ray camera systems can go down to several microns and is mainly restricted to pixel dimensions. The recent development of an efficient subpixel resolution algorithm allows a release from pixel size, limiting the resolution only to the quality of the optics. In this work polycapillary properties that influence the spatial resolution are systematized and assessed both theoretically and experimentally. It is demonstrated that with the current technological level reaching one micron resolution is challenging, but possible.
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Submitted 24 May, 2017;
originally announced May 2017.
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High Curie temperature and perpendicular magnetic anisotropy in homoepitaxial InMnAs films
Authors:
Y. Yuan,
Y. Wang,
K. Gao,
M. Khalid,
C. Wu,
W. Zhang,
F. Munnik,
E. Weschke,
C. Baehtz,
W. Skorupa,
M. Helm,
S. Zhou
Abstract:
We have prepared the dilute magnetic semiconductor (DMS) InMnAs with different Mn concentrations by ion implantation and pulsed laser melting. The Curie temperature of the In1-xMnxAs epilayer depends on the Mn concentration x, reaching 82 K for x=0.105. The substitution of Mn ions at the Indium sites induces a compressive strain perpendicular to the InMnAs layer and a tensile strain along the in-p…
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We have prepared the dilute magnetic semiconductor (DMS) InMnAs with different Mn concentrations by ion implantation and pulsed laser melting. The Curie temperature of the In1-xMnxAs epilayer depends on the Mn concentration x, reaching 82 K for x=0.105. The substitution of Mn ions at the Indium sites induces a compressive strain perpendicular to the InMnAs layer and a tensile strain along the in-plane direction. This gives rise to a large perpendicular magnetic anisotropy, which is often needed for the demonstration of electrical control of magnetization and for spin-transfer-torque induced magnetization reversal.
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Submitted 4 June, 2015;
originally announced June 2015.
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Carbon p Electron Ferromagnetism in Silicon Carbide
Authors:
Y. Wang,
Y. Liu,
G. Wang,
W. Anwand,
C. Jenkins,
E. Arenholz,
F. Munnik,
O. Gordan,
G. Salvan,
D. R. T. Zahn,
X. Chen,
S. Gemming,
M. Helm,
S. Zhou
Abstract:
Ferromagnetism can occur in wide-band gap semiconductors as well as in carbon-based materials when specific defects are introduced. It is thus desirable to establish a direct relation between the defects and the resulting ferromagnetism. Here, we contribute to revealing the origin of defect-induced ferromagnetism using SiC as a prototypical example. We show that the long-range ferromagnetic coupli…
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Ferromagnetism can occur in wide-band gap semiconductors as well as in carbon-based materials when specific defects are introduced. It is thus desirable to establish a direct relation between the defects and the resulting ferromagnetism. Here, we contribute to revealing the origin of defect-induced ferromagnetism using SiC as a prototypical example. We show that the long-range ferromagnetic coupling can be attributed to the p electrons of the nearest-neighbor carbon atoms around the VSiVC divacancies. Thus, the ferromagnetism is traced down to its microscopic, electronic origin.
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Submitted 2 March, 2015;
originally announced March 2015.
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Sub-pixel resolution with color X-ray camera SLcam(R)
Authors:
Stanisław H. Nowak,
Aniouar Bjeoumikhov,
Johannes von Borany,
Josef Buchriegler,
Frans Munnik,
Marko Petric,
Martin Radtke,
Axel D. Renno,
Uwe Reinholz,
Oliver Scharf,
Reiner Wedell
Abstract:
The color X-ray camera SLcam(R) is a full-field, single photon detector providing scanning free, energy and spatially resolved X-ray imaging. Spatial resolution is achieved with the use of polycapillary optics guiding X-ray photons from small regions on a sample to distinct energy dispersive pixels on a CCD. Applying sub-pixel resolution, signals from individual capillary channels can be distingui…
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The color X-ray camera SLcam(R) is a full-field, single photon detector providing scanning free, energy and spatially resolved X-ray imaging. Spatial resolution is achieved with the use of polycapillary optics guiding X-ray photons from small regions on a sample to distinct energy dispersive pixels on a CCD. Applying sub-pixel resolution, signals from individual capillary channels can be distinguished. Accordingly the SLcam(R) spatial resolution can be released from pixel size being confined rather to a diameter of individual polycapillary channels. In this work a new approach to sub-pixel resolution algorithm comprising photon events also from the pixel centers is proposed. The details of the employed numerical method and several sub-pixel resolution examples are presented and discussed.
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Submitted 27 January, 2015;
originally announced January 2015.
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Defect-induced magnetism in SiC: Interplay between ferromagnetism and paramagnetism
Authors:
Yutian Wang,
Yu Liu,
Elke Wendler,
René Hübner,
Wolfgang Anwand,
Gang Wang,
Xuliang Chen,
Wei Tong,
Zhaorong Yang,
Frans Munnik,
Gregor Bukalis,
Xiaolong Chen,
Sibylle Gemming,
Manfred Helm,
Shengqiang Zhou
Abstract:
Defect-induced ferromagnetism has triggered a lot of investigations and controversies. The major issue is that the induced ferromagnetic signal is so weak that it can sufficiently be accounted for by trace contamination. To resolve this issue, we studied the variation of the magnetic properties of SiC after neutron irradiation with fluence covering four orders of magnitude. A large paramagnetic co…
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Defect-induced ferromagnetism has triggered a lot of investigations and controversies. The major issue is that the induced ferromagnetic signal is so weak that it can sufficiently be accounted for by trace contamination. To resolve this issue, we studied the variation of the magnetic properties of SiC after neutron irradiation with fluence covering four orders of magnitude. A large paramagnetic component has been induced and scales up with defect concentration, which can be well accounted for by uncoupled divacancies. However, the ferromagnetic contribution is still weak and only appears in the low fluence range of neutrons or after annealing treatments. First-principles calculations hint towards a mutually exclusive role of the concentration of defects: Defects favor spin polarization at the expense of magnetic interaction. Combining both experimental and first-principles calculation results, the defect-induced ferromagnetism can be understood as a local effect which cannot be scaled up with the volume. Therefore, our investigation answers the long-standing question why the defect-induced ferromagnetic signal is weak.
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Submitted 10 November, 2015; v1 submitted 6 January, 2015;
originally announced January 2015.
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Disentangling defect-induced ferromagnetism in SiC
Authors:
Yutian Wang,
Lin Li,
Slawomir Prucnal,
Xuliang Chen,
Wei Tong,
Zhaorong Yang,
Frans Munnik,
Kay Potzger,
Wolfgang Skorupa,
Sibylle Gemming,
Manfred Helm,
Shengqiang Zhou
Abstract:
We present a detailed investigation of the magnetic properties in SiC single crystals bombarded with neon ions. Through careful measuring of the magnetization of virgin and irradiated SiC, we decompose the magnetization of SiC into paramagnetic, superparamagnetic, and ferromagnetic contributions. The ferromagnetic contribution persists well above room temperature and exhibits a pronounced magnetic…
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We present a detailed investigation of the magnetic properties in SiC single crystals bombarded with neon ions. Through careful measuring of the magnetization of virgin and irradiated SiC, we decompose the magnetization of SiC into paramagnetic, superparamagnetic, and ferromagnetic contributions. The ferromagnetic contribution persists well above room temperature and exhibits a pronounced magnetic anisotropy. We qualitatively explain the magnetic properties as a result of the intrinsic clustering tendency of defects.
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Submitted 22 January, 2014;
originally announced January 2014.
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Structural and magnetic properties of irradiated SiC
Authors:
Yutian Wang,
Xuliang Chen,
Lin Li,
Artem Shalimov,
Wei Tong,
Slawomir Prucnal,
Frans Munnik,
Zhaorong Yang,
Wolfgang Skorupa,
Manfred Helm,
Shengqiang Zhou
Abstract:
We present a comprehensive structural characterization of ferromagnetic SiC single crystals induced by Ne ion irradiation. The ferromagnetism has been confirmed by electron spin resonance and possible transition metal impurities can be excluded to be the origin of the observed ferromagnetism. Using X-ray diffraction and Rutherford backscattering/channeling spectroscopy, we estimate the damage to t…
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We present a comprehensive structural characterization of ferromagnetic SiC single crystals induced by Ne ion irradiation. The ferromagnetism has been confirmed by electron spin resonance and possible transition metal impurities can be excluded to be the origin of the observed ferromagnetism. Using X-ray diffraction and Rutherford backscattering/channeling spectroscopy, we estimate the damage to the crystallinity of SiC which mutually influences the ferromagnetism in SiC.
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Submitted 15 January, 2014;
originally announced January 2014.
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The resonance triplet at E_alpha = 4.5 MeV in the 40Ca(alpha,gamma)44Ti reaction
Authors:
Konrad Schmidt,
Shavkat Akhmadaliev,
Michael Anders,
Daniel Bemmerer,
Konstanze Boretzky,
Antonio Caciolli,
Detlev Degering,
Mirco Dietz,
Rugard Dressler,
Zoltán Elekes,
Zsolt Fülöp,
György Gyürky,
Roland Hannaske,
Arnd R. Junghans,
Michele Marta,
Marie-Luise Menzel,
Frans Munnik,
Dorothea Schumann,
Ronald Schwengner,
Tamás Szücs,
Andreas Wagner,
Dmitry Yakorev,
Kai Zuber
Abstract:
The 40Ca(alpha,gamma)44Ti reaction is believed to be the main production channel for the radioactive nuclide 44Ti in core-collapse supernovae. Radiation from decaying 44Ti has been observed so far for two supernova remnants, and a precise knowledge of the 44Ti production rate may help improve supernova models. The 40Ca(alpha,gamma)44Ti astrophysical reaction rate is determined by a number of narro…
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The 40Ca(alpha,gamma)44Ti reaction is believed to be the main production channel for the radioactive nuclide 44Ti in core-collapse supernovae. Radiation from decaying 44Ti has been observed so far for two supernova remnants, and a precise knowledge of the 44Ti production rate may help improve supernova models. The 40Ca(alpha,gamma)44Ti astrophysical reaction rate is determined by a number of narrow resonances. Here, the resonance triplet at E_alpha = 4497, 4510, and 4523 keV is studied both by activation, using an underground laboratory for the gamma counting, and by in-beam gamma spectrometry. The target properties are determined by elastic recoil detection analysis and by nuclear reactions. The strengths of the three resonances are determined to omega gamma = (0.92+-0.20), (6.2+-0.5), and (1.32+-0.24) eV, respectively, a factor of two more precise than before. The strengths of this resonance triplet may be used in future works as a point of reference. In addition, the present new data directly affect the astrophysical reaction rate at relatively high temperatures, above 3.5 GK.
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Submitted 24 July, 2013;
originally announced July 2013.
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Room temperature ferromagnetic-like behavior in Mn-implanted and post-annealed InAs layers deposited by Molecular Beam Epitaxy
Authors:
R. Gonzalez-Arrabal,
Y. Gonzalez,
L. Gonzalez,
M. Garcia-Hernandez,
F. Munnik,
M. S. Martin-Gonzalez
Abstract:
We report on the magnetic and structural properties of Ar and Mn implanted InAs epitaxial films grown on GaAs (100) by Molecular Beam Epitaxy (MBE) and the effect of Rapid Thermal Annealing (RTA) for 30 seconds at 750C. Channeling Particle Induced X- ray Emission (PIXE) experiments reveal that after Mn implantation almost all Mn atoms are subsbtitutional in the In-site of the InAs lattice, like…
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We report on the magnetic and structural properties of Ar and Mn implanted InAs epitaxial films grown on GaAs (100) by Molecular Beam Epitaxy (MBE) and the effect of Rapid Thermal Annealing (RTA) for 30 seconds at 750C. Channeling Particle Induced X- ray Emission (PIXE) experiments reveal that after Mn implantation almost all Mn atoms are subsbtitutional in the In-site of the InAs lattice, like in a diluted magnetic semiconductor (DMS). All of these samples show diamagnetic behavior. But, after RTA treatment the Mn-InAs films exhibit room-temperature magnetism. According to PIXE measurements the Mn atoms are no longer substitutional. When the same set of experiments were performed with As as implantation ion all of the layers present diamagnetism without exception. This indicates that the appearance of room-temperature ferromagnetic-like behavior in the Mn-InAs-RTA layer is not related to lattice disorder produce during implantation, but to a Mn reaction produced after a short thermal treatment. X-ray diffraction patterns (XRD) and Rutherford Back Scattering (RBS) measurements evidence the segregation of an oxygen deficient-MnO2 phase (nominally MnO1.94) in the Mn-InAs-RTA epitaxial layers which might be on the origin of room temperature ferromagnetic-like response observed.
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Submitted 14 April, 2009;
originally announced April 2009.
