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Showing 1–2 of 2 results for author: Muckerman, J T

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  1. First-Principles Approach for Energy Level Alignment at Aqueous Semiconductor Interfaces

    Authors: Neerav Kharche, James T. Muckerman, Mark S. Hybertsen

    Abstract: A first-principles approach is demonstrated to calculate the relationship between aqueous semiconductor interface structure and energy level alignment. The physical interface structure is sampled using density functional theory based molecular dynamics, yielding the interface electrostatic dipole. The $GW$ approach is used to place the electronic band edge energies of the semiconductor relative to… ▽ More

    Submitted 26 September, 2014; v1 submitted 11 September, 2014; originally announced September 2014.

    Comments: Accepted in Phys. Rev. Lett. 5 pages, 4 figures, Supplemental Material: 3 pages, 4 figures

  2. arXiv:cond-mat/0610002  [pdf

    cond-mat.mtrl-sci

    Electronic Structure of ZnO nanowire

    Authors: Xiao Shen, Mark R. Pederson, Jin-Cheng Zheng, James W. Davenport, James T. Muckerman, Philip B. Allen

    Abstract: This paper presents two first-principles calculations on the lattice- and electronic- structures of a small-diameter infinite and truncated ZnO nanowire. The two calculations show excellent agreement with each other. For the small diameter nanowire, the lattice and electronic properties are determined by the relaxed surface. We find a similarity between the nanowire surface and the surface of th… ▽ More

    Submitted 29 September, 2006; originally announced October 2006.

    Comments: 12 pages, 9 figures