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Superconductivity in silicon: a review
Authors:
Monika Moun,
Goutam Sheet
Abstract:
Silicon, one of the most abundant elements found on Earth, has been an excellent choice of the semiconductor industry for ages. Despite it's remarkable applications in modern semiconductor-based electronic devices, the potential of cubic silicon in superconducting electronics remained a challenge because even heavily doped silicon crystals do not superconduct under normal conditions. It is apparen…
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Silicon, one of the most abundant elements found on Earth, has been an excellent choice of the semiconductor industry for ages. Despite it's remarkable applications in modern semiconductor-based electronic devices, the potential of cubic silicon in superconducting electronics remained a challenge because even heavily doped silicon crystals do not superconduct under normal conditions. It is apparent that if superconductivity can be introduced in cubic silicon, that will bring a breakthrough in low-dissipation electronic circuitry. Motivated by this, attempts have been made by several research groups to induce superconductivity in silicon through a number of different routes. Some of the other structural phases of silicon like $β$-Sn and simple hexagonal are, however, known to display superconductivity. In the present review article, various theoretical and experimental aspects of superconductivity in silicon are discussed. Superconductivity in different phases and different structural forms of silicon are also reviewed. We also highlight the potential of superconducting phases of silicon for technological applications in super-conducting nano-electronics.
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Submitted 9 August, 2021; v1 submitted 6 August, 2021;
originally announced August 2021.
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Enhanced electrical transport through wrinkles in turbostratic graphene films
Authors:
Monika Moun,
Aastha Vasdev,
Rajashekhar Pujar,
K. Priya Madhuri,
U. Mogera,
Neena S. John,
G. U. Kulkarni,
Goutam Sheet
Abstract:
Formation of wrinkles is a common phenomenon in the large area growth of two dimensional layered materials on metallic substrates. Wrinkles can significantly affect the working of 2D materials based large scale electronic devices and therefore, it is of utmost importance to investigate local electrical properties of such wrinkled/folded structures on 2D materials. Here, we report local conductivit…
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Formation of wrinkles is a common phenomenon in the large area growth of two dimensional layered materials on metallic substrates. Wrinkles can significantly affect the working of 2D materials based large scale electronic devices and therefore, it is of utmost importance to investigate local electrical properties of such wrinkled/folded structures on 2D materials. Here, we report local conductivity measurements by conducting atomic force microscopy (CAFM) and surface potential mapping by Kelvin Probe Force microscopy (KPFM) on large area wrinkled turbostratic graphene films grown on nickel foils. We show that the electrical transport current is several orders of magnitude higher on the wrinkles than that on the flat regions of the graphene films. Therefore, our results suggest that controlled engineering of such wrinkles on graphene may facilitate development of superior graphene-based nano-electronic devices where transport of high current through narrow channels are desired.
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Submitted 1 May, 2021;
originally announced May 2021.
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Effect of different precursors on CVD growth of molybdenum disulfide
Authors:
Aditya Singh,
Monika Moun,
Rajendra Singh
Abstract:
Control over thickness, size, and area of chemical vapor deposition (CVD) grown molybdenum disulfide (MoS2) flakes is crucial for device application. Herein, we report a quantitative comparison of CVD synthesis of MoS2 on SiO2/Si substrate using three different precursors viz., molybdenum trioxide (MoO3), ammonium heptamolybdate (AHM), and tellurium (Te). A three-step chemical reaction mechanism o…
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Control over thickness, size, and area of chemical vapor deposition (CVD) grown molybdenum disulfide (MoS2) flakes is crucial for device application. Herein, we report a quantitative comparison of CVD synthesis of MoS2 on SiO2/Si substrate using three different precursors viz., molybdenum trioxide (MoO3), ammonium heptamolybdate (AHM), and tellurium (Te). A three-step chemical reaction mechanism of evolution of MoS2 from MoO3 micro-crystals is proposed for MoO3 precursor. Furthermore, a strategy based on growth temperature and ratio of amount of precursors is developed to systematically control thickness and area of MoS2 flakes. Our findings show that for large-sized crystalline monolayer MoS2 flakes, MoO3 is a better choice than AHM and Te-assisted synthesis. Moreover, Te as growth promoter, can lower down growth temperature by 250C. This study can be further used to fabricate MoS2 based high-performance electronic devices such as photodetectors, thin film transistors, and sensors.
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Submitted 27 March, 2020;
originally announced March 2020.
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NaCl-Assisted Substrate Dependent 2D Planar Nucleated Growth of MoS2
Authors:
Aditya Singh,
Monika Moun,
Madan Sharma,
Arabinda Barman,
Ashok Kumar Kapoor,
Rajendra Singh
Abstract:
Synthesis of large-scale, uniform, easily transferable, and highly crystalline monolayer (1L) molybdenum disulfide (MoS2) on different substrates is a challenge and could decide its suitability for opto-electronic device applications. Herein, we report a facile NaCl-assisted Chemical Vapor Deposition (CVD) synthesis of high-quality MoS2 on amorphous, crystalline and layered substrates. Optical mic…
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Synthesis of large-scale, uniform, easily transferable, and highly crystalline monolayer (1L) molybdenum disulfide (MoS2) on different substrates is a challenge and could decide its suitability for opto-electronic device applications. Herein, we report a facile NaCl-assisted Chemical Vapor Deposition (CVD) synthesis of high-quality MoS2 on amorphous, crystalline and layered substrates. Optical microscopy and Raman spectroscopy show that sapphire and SiO2/Si are suitable substrates for large 1L-MoS2 flakes growth, while mica is excellent for large-area continuous films. Comparatively lesser full-width-at-half-maximum (FWHM) of predominant A exciton peak (which is associated with direct band gap at K point) in photoluminescence spectra of 1L-MoS2 on sapphire suggests its high crystalline quality. However, 1L-MoS2 on other substrates, especially on quartz and bare Si show poor crystalline quality. The study depicts that the NaCl assists in the formation of seeding promoter such as water-soluble layer of Na2S and/or Na2SO4 on the substrate that helps in 2D planar nucleation of MoS2. The formation of such intermediate seeding layers also helps in layer transfer owing to its easy water solubility. The study could be utilized for large-scale synthesis of 1L-MoS2 on different substrates for high-performance optoelectronic devices.
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Submitted 27 March, 2020;
originally announced March 2020.
