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Rediscovery of $B^0\to J\mskip 1mu / ψ\mskip 2mu K^0_{\scriptscriptstyle L}$ at Belle II
Authors:
Belle II Collaboration,
F. Abudinén,
I. Adachi,
R. Adak,
K. Adamczyk,
P. Ahlburg,
J. K. Ahn,
H. Aihara,
N. Akopov,
A. Aloisio,
F. Ameli,
L. Andricek,
N. Anh Ky,
D. M. Asner,
H. Atmacan,
V. Aulchenko,
T. Aushev,
V. Aushev,
T. Aziz,
V. Babu,
S. Bacher,
S. Baehr,
S. Bahinipati,
A. M. Bakich,
P. Bambade
, et al. (523 additional authors not shown)
Abstract:
We present preliminary results on the reconstruction of the $B^0\to J\mskip 1mu / ψ\mskip 2mu K^0_{\scriptscriptstyle L}$ decay, where $J\mskip 1mu / ψ\mskip 2mu\toμ^+μ^-$ or $e^+e^-$. Using a dataset corresponding to a luminosity of $62.8\pm0.6\mbox{fb}^{-1}$ collected by the Belle II experiment at the SuperKEKB asymmetric energy $e^+e^-$ collider, we measure a total of $267\pm21$ candidates with…
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We present preliminary results on the reconstruction of the $B^0\to J\mskip 1mu / ψ\mskip 2mu K^0_{\scriptscriptstyle L}$ decay, where $J\mskip 1mu / ψ\mskip 2mu\toμ^+μ^-$ or $e^+e^-$. Using a dataset corresponding to a luminosity of $62.8\pm0.6\mbox{fb}^{-1}$ collected by the Belle II experiment at the SuperKEKB asymmetric energy $e^+e^-$ collider, we measure a total of $267\pm21$ candidates with $J\mskip 1mu / ψ\mskip 2mu\toμ^+μ^-$ and $226\pm20$ with with $J\mskip 1mu / ψ\mskip 2mu\to e^+e^-$. The quoted errors are statistical only.
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Submitted 25 June, 2021;
originally announced June 2021.
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Measurement of the branching fractions of $B\toη' K$ decays using 2019/2020 Belle II data
Authors:
Belle II Collaboration,
F. Abudinén,
I. Adachi,
R. Adak,
K. Adamczyk,
P. Ahlburg,
J. K. Ahn,
H. Aihara,
N. Akopov,
A. Aloisio,
F. Ameli,
L. Andricek,
N. Anh Ky,
D. M. Asner,
H. Atmacan,
V. Aulchenko,
T. Aushev,
V. Aushev,
T. Aziz,
V. Babu,
S. Bacher,
S. Baehr,
S. Bahinipati,
A. M. Bakich,
P. Bambade
, et al. (523 additional authors not shown)
Abstract:
This note describes the rediscovery of $B\toη' K$ decays in Belle II data, both in the charged and neutral final state: $B_0\toη' K_S$ and $B^\pm\toη' K^\pm$. The $η'$ is searched for in two decay modes: $η'\toηπ^+π^-$ with $η\toγγ$, and $η'\toργ$. The analysis uses data collected in 2019 and 2020 at the SuperKEKB asymmetric $e^+e^-$ collider, with an integrated luminosity of $62.8~fb^{-1}$, corre…
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This note describes the rediscovery of $B\toη' K$ decays in Belle II data, both in the charged and neutral final state: $B_0\toη' K_S$ and $B^\pm\toη' K^\pm$. The $η'$ is searched for in two decay modes: $η'\toηπ^+π^-$ with $η\toγγ$, and $η'\toργ$. The analysis uses data collected in 2019 and 2020 at the SuperKEKB asymmetric $e^+e^-$ collider, with an integrated luminosity of $62.8~fb^{-1}$, corresponding to $68.2$ million of $B\bar{B}$ pairs produced. The signal yield is obtained via an unbinned maximum likelihood fit to signal sensitive variables, obtaining branching ratios:
$$\mathcal{B}\left(B^\pm\toη'K^\pm\right) = \left(63.4~^{+3.4}_{-3.3}\,(stat)\,\pm3.2\,(syst)\,\right) \times10^{-6} $$
$$\mathcal{B}\left(B_0\toη'K_S\right) = \left(59.9~^{+5.8}_{-5.5}\,(stat)\,\pm2.9\,(syst)\,\right) \times10^{-6} $$ which are consistent with world average.
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Submitted 12 May, 2021; v1 submitted 13 April, 2021;
originally announced April 2021.
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Heavily Irradiated N-in-p Thin Planar Pixel Sensors with and without Active Edges
Authors:
S. Terzo,
L. Andricek,
A. Macchiolo,
H. G. Moser,
R. Nisius,
R. H. Richter,
P. Weigell
Abstract:
We present the results of the characterization of silicon pixel modules employing n-in-p planar sensors with an active thickness of 150 $\mathrmμ$m, produced at MPP/HLL, and 100-200 $\mathrmμ$m thin active edge sensor devices, produced at VTT in Finland. These thin sensors are designed as candidates for the ATLAS pixel detector upgrade to be operated at the HL-LHC, as they ensure radiation hardnes…
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We present the results of the characterization of silicon pixel modules employing n-in-p planar sensors with an active thickness of 150 $\mathrmμ$m, produced at MPP/HLL, and 100-200 $\mathrmμ$m thin active edge sensor devices, produced at VTT in Finland. These thin sensors are designed as candidates for the ATLAS pixel detector upgrade to be operated at the HL-LHC, as they ensure radiation hardness at high fluences. They are interconnected to the ATLAS FE-I3 and FE-I4 read-out chips. Moreover, the n-in-p technology only requires a single side processing and thereby it is a cost-effective alternative to the n-in-n pixel technology presently employed in the LHC experiments. High precision beam test measurements of the hit efficiency have been performed on these devices both at the CERN SpS and at DESY, Hamburg. We studied the behavior of these sensors at different bias voltages and different beam incident angles up to the maximum one expected for the new Insertable B-Layer of ATLAS and for HL-LHC detectors. Results obtained with 150 $\mathrmμ$m thin sensors, assembled with the new ATLAS FE-I4 chip and irradiated up to a fluence of 4$\times$10$^{15}\mathrm{n}_{\mathrm{eq}}/\mathrm{cm}^2$, show that they are excellent candidates for larger radii of the silicon pixel tracker in the upgrade of the ATLAS detector at HL-LHC. In addition, the active edge technology of the VTT devices maximizes the active area of the sensor and reduces the material budget to suit the requirements for the innermost layers. The edge pixel performance of VTT modules has been investigated at beam test experiments and the analysis after irradiation up to a fluence of 5$\times$10$^{15}\mathrm{n}_{\mathrm{eq}}/\mathrm{cm}^2$ has been performed using radioactive sources in the laboratory.
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Submitted 19 February, 2014; v1 submitted 13 January, 2014;
originally announced January 2014.
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DEPFET active pixel detectors for a future linear $e^+e^-$ collider
Authors:
O. Alonso,
R. Casanova,
A. Dieguez,
J. Dingfelder,
T. Hemperek,
T. Kishishita amd T. Kleinohl,
M. Koch,
H. Krueger,
M. Lemarenko,
F. Luetticke,
C. Marinas,
M. Schnell,
N. Wermes,
A. Campbell,
T. Ferber,
C. Kleinwort,
C. Niebuhr,
Y. Soloviev,
M. Steder,
R. Volkenborn,
S. Yaschenko,
P. Fischer,
C. Kreidl,
I. Peric,
J. Knopf
, et al. (62 additional authors not shown)
Abstract:
The DEPFET collaboration develops highly granular, ultra-transparent active pixel detectors for high-performance vertex reconstruction at future collider experiments. The characterization of detector prototypes has proven that the key principle, the integration of a first amplification stage in a detector-grade sensor material, can provide a comfortable signal to noise ratio of over 40 for a senso…
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The DEPFET collaboration develops highly granular, ultra-transparent active pixel detectors for high-performance vertex reconstruction at future collider experiments. The characterization of detector prototypes has proven that the key principle, the integration of a first amplification stage in a detector-grade sensor material, can provide a comfortable signal to noise ratio of over 40 for a sensor thickness of 50-75 $\mathrm{\mathbf{μm}}$. ASICs have been designed and produced to operate a DEPFET pixel detector with the required read-out speed. A complete detector concept is being developed, including solutions for mechanical support, cooling and services. In this paper the status of DEPFET R & D project is reviewed in the light of the requirements of the vertex detector at a future linear $\mathbf{e^+ e^-}$ collider.
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Submitted 10 December, 2012;
originally announced December 2012.
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Thin n-in-p pixel sensors and the SLID-ICV vertical integration technology for the ATLAS upgrade at the HL-LHC
Authors:
A. Macchiolo,
L. Andricek,
M. Ellenburg,
H. G. Moser,
R. Nisius,
R. H. Richter,
S. Terzo,
P. Weigell
Abstract:
The R&D activity presented is focused on the development of new modules for the upgrade of the ATLAS pixel system at the High Luminosity LHC (HL-LHC). The performance after irradiation of n-in-p pixel sensors of different active thicknesses is studied, together with an investigation of a novel interconnection technique offered by the Fraunhofer Institute EMFT in Munich, the Solid-Liquid-InterDiffu…
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The R&D activity presented is focused on the development of new modules for the upgrade of the ATLAS pixel system at the High Luminosity LHC (HL-LHC). The performance after irradiation of n-in-p pixel sensors of different active thicknesses is studied, together with an investigation of a novel interconnection technique offered by the Fraunhofer Institute EMFT in Munich, the Solid-Liquid-InterDiffusion (SLID), which is an alternative to the standard solder bump-bonding. The pixel modules are based on thin n-in-p sensors, with an active thickness of 75 um or 150 um, produced at the MPI Semiconductor Laboratory (MPI HLL) and on 100 um thick sensors with active edges, fabricated at VTT, Finland. Hit efficiencies are derived from beam test data for thin devices irradiated up to a fluence of 4e15 neq/cm^2. For the active edge devices, the charge collection properties of the edge pixels before irradiation is discussed in detail, with respect to the inner ones, using measurements with radioactive sources. Beyond the active edge sensors, an additional ingredient needed to design four side buttable modules is the possibility of moving the wire bonding area from the chip surface facing the sensor to the backside, avoiding the implementation of the cantilever extruding beyond the sensor area. The feasibility of this process is under investigation with the FE-I3 SLID modules, where Inter Chip Vias are etched, employing an EMFT technology, with a cross section of 3 um x 10 um, at the positions of the original wire bonding pads.
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Submitted 30 October, 2012;
originally announced October 2012.
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SLID-ICV Vertical Integration Technology for the ATLAS Pixel Upgrades
Authors:
A. Macchiolo,
L. Andricek,
H. G. Moser,
R. Nisius,
R. H. Richter,
P. Weigell
Abstract:
We present the results of the characterization of pixel modules composed of 75 um thick n-in-p sensors and ATLAS FE-I3 chips, interconnected with the SLID (Solid Liquid Inter-Diffusion) technology. This technique, developed at Fraunhofer-EMFT, is explored as an alternative to the bump-bonding process. These modules have been designed to demonstrate the feasibility of a very compact detector to be…
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We present the results of the characterization of pixel modules composed of 75 um thick n-in-p sensors and ATLAS FE-I3 chips, interconnected with the SLID (Solid Liquid Inter-Diffusion) technology. This technique, developed at Fraunhofer-EMFT, is explored as an alternative to the bump-bonding process. These modules have been designed to demonstrate the feasibility of a very compact detector to be employed in the future ATLAS pixel upgrades, making use of vertical integration technologies. This module concept also envisages Inter-Chip-Vias (ICV) to extract the signals from the backside of the chips, thereby achieving a higher fraction of active area with respect to the present pixel module design. In the case of the demonstrator module, ICVs are etched over the original wire bonding pads of the FE-I3 chip. In the modules with ICVs the FE-I3 chips will be thinned down to 50 um. The status of the ICV preparation is presented.
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Submitted 29 February, 2012;
originally announced February 2012.
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Expected Performance of the ATLAS Experiment - Detector, Trigger and Physics
Authors:
The ATLAS Collaboration,
G. Aad,
E. Abat,
B. Abbott,
J. Abdallah,
A. A. Abdelalim,
A. Abdesselam,
O. Abdinov,
B. Abi,
M. Abolins,
H. Abramowicz,
B. S. Acharya,
D. L. Adams,
T. N. Addy,
C. Adorisio,
P. Adragna,
T. Adye,
J. A. Aguilar-Saavedra,
M. Aharrouche,
S. P. Ahlen,
F. Ahles,
A. Ahmad,
H. Ahmed,
G. Aielli,
T. Akdogan
, et al. (2587 additional authors not shown)
Abstract:
A detailed study is presented of the expected performance of the ATLAS detector. The reconstruction of tracks, leptons, photons, missing energy and jets is investigated, together with the performance of b-tagging and the trigger. The physics potential for a variety of interesting physics processes, within the Standard Model and beyond, is examined. The study comprises a series of notes based on…
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A detailed study is presented of the expected performance of the ATLAS detector. The reconstruction of tracks, leptons, photons, missing energy and jets is investigated, together with the performance of b-tagging and the trigger. The physics potential for a variety of interesting physics processes, within the Standard Model and beyond, is examined. The study comprises a series of notes based on simulations of the detector and physics processes, with particular emphasis given to the data expected from the first years of operation of the LHC at CERN.
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Submitted 14 August, 2009; v1 submitted 28 December, 2008;
originally announced January 2009.
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Status of a DEPFET pixel system for the ILC vertex detector
Authors:
M. Trimpl,
M. Koch,
R. Kohrs,
H. Krueger,
P. Lodomez,
L. Reuen,
C. Sandow,
E. v. Toerne,
J. J. Velthuis,
N. Wermes,
L. Andricek,
H. G. Moser,
R. H. Richter,
G. Lutz,
F. Giesen,
P. Fischer,
I. Peric
Abstract:
We have developed a prototype system for the ILC vertex detector based on DEPFET pixels. The system operates a 128x64 matrix (with ~35x25 square micron large pixels) and uses two dedicated microchips, the SWITCHER II chip for matrix steering and the CURO II chip for readout. The system development has been driven by the final ILC requirements which above all demand a detector thinned to 50 micro…
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We have developed a prototype system for the ILC vertex detector based on DEPFET pixels. The system operates a 128x64 matrix (with ~35x25 square micron large pixels) and uses two dedicated microchips, the SWITCHER II chip for matrix steering and the CURO II chip for readout. The system development has been driven by the final ILC requirements which above all demand a detector thinned to 50 micron and a row wise read out with line rates of 20MHz and more. The targeted noise performance for the DEPFET technology is in the range of ENC=100 e-. The functionality of the system has been demonstrated using different radioactive sources in an energy range from 6 to 40keV. In recent test beam experiments using 6GeV electrons, a signal-to-noise ratio of S/N~120 has been achieved with present sensors being 450 micron thick. For improved DEPFET systems using 50 micron thin sensors in future, a signal-to-noise of 40 is expected.
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Submitted 6 December, 2006; v1 submitted 13 June, 2006;
originally announced June 2006.
