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Platinum Ditelluride based Field Effect Transistors for highly sensitive H2S sensing
Authors:
A. Shahid,
J. Gum,
R. Unnithan,
S. Mokkapati
Abstract:
Two-dimensional materials, specifically transition metal dichalcogenides, for highly sensitive gas sensing are emerging as effective detection technology. Platinum ditelluride (PtTe2) is an intriguing material in the realm of field-effect transistors (FETs) due to its unique electronic properties. In this study, the CVDsynthesized PtTe2 was functionalized with Au-Pd thin film for analyte-specific…
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Two-dimensional materials, specifically transition metal dichalcogenides, for highly sensitive gas sensing are emerging as effective detection technology. Platinum ditelluride (PtTe2) is an intriguing material in the realm of field-effect transistors (FETs) due to its unique electronic properties. In this study, the CVDsynthesized PtTe2 was functionalized with Au-Pd thin film for analyte-specific (H2S) sensing for better toxic gas sensitivity and selectivity. It was concluded that PtTe2, in combination with appropriate metal or oxide decorations, had great potential for ultrasensitive and selective, real-time gas sensor applications.
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Submitted 15 May, 2025;
originally announced May 2025.
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Metal oxide decoration on Si-FETs for selective gas sensing at room temperature
Authors:
A. Shahid,
J. Gum,
S. Mokkapati,
R. Unnithan
Abstract:
Metal oxide semiconductors have been thoroughly studied for gas sensing applications due to the electrical transduction phenomenon in the presence of gaseous analytes. The chemiresistive sensors prevalent in the applications have several challenges associated with them inclusive of instability, longevity, temperature/humidity sensitivity, and power consumption due to the need of heaters. Herein, w…
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Metal oxide semiconductors have been thoroughly studied for gas sensing applications due to the electrical transduction phenomenon in the presence of gaseous analytes. The chemiresistive sensors prevalent in the applications have several challenges associated with them inclusive of instability, longevity, temperature/humidity sensitivity, and power consumption due to the need of heaters. Herein, we present a silicon field effect transistor-based gas sensor functionalized with CuO. The oxidized Cu thin film acts as a selective room temperature H2S sensor with impressive response and recovery. Using this methodology, we propose a standalone compact enose based on our results for a wide spectrum of gas detection.
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Submitted 15 May, 2025;
originally announced May 2025.
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Focused ion beam polishing based optimization of high-Q silica microdisk resonators
Authors:
Lekshmi Eswaramoorthy,
Parul Sharma,
Brijesh Kumar,
Abhay Anand V S,
Anuj Kumar Singh,
Kishor Kumar Mandal,
Sudha Mokkapati,
Anshuman Kumar
Abstract:
Whispering gallery mode (WGM) microdisk resonators are promising optical devices that confine light efficiently and enable enhanced nonlinear optical effects. This work presents a novel approach to reduce sidewall roughness in SiO\textsubscript{2} microdisk resonators using focused ion beam (FIB) polishing. The microdisks, with varying diameter ranging from 5 to 20 $μ$m are fabricated using a mult…
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Whispering gallery mode (WGM) microdisk resonators are promising optical devices that confine light efficiently and enable enhanced nonlinear optical effects. This work presents a novel approach to reduce sidewall roughness in SiO\textsubscript{2} microdisk resonators using focused ion beam (FIB) polishing. The microdisks, with varying diameter ranging from 5 to 20 $μ$m are fabricated using a multi-step fabrication scheme. However, the etching process introduces significant sidewall roughness, which increases with decreasing microdisk radius, degrading the resonators' quality. To address this issue, a FIB system is employed to polish the sidewalls, using optimized process parameters to minimize Ga ion implantation. White light interferometry measurements reveal a significant reduction in surface roughness from 7 nm to 20 nm for a 5 $μ$m diameter microdisk, leading to a substantial enhancement in the scattering quality factor (Qss) from $3\times 10^2$ to $2\times 10^6$. These findings demonstrate the effectiveness of FIB polishing in improving the quality of microdisk resonators and open up new possibilities for the fabrication of advanced photonic devices.
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Submitted 11 November, 2024;
originally announced November 2024.
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Engineering Purcell factor anisotropy for dark and bright excitons in two dimensional semiconductors
Authors:
Lekshmi Eswaramoorthy,
Sudha Mokkapati,
Anshuman Kumar
Abstract:
Tightly bound dark excitons in atomically thin semiconductors can be used for various optoelectronic applications including light storage and quantum communication. Their optical accessibility is however limited due to their out-of-plane transition dipole moment. We thus propose to strengthen the coupling of dark excitons in two dimensional materials with out-of-plane resonant modes of a cavity at…
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Tightly bound dark excitons in atomically thin semiconductors can be used for various optoelectronic applications including light storage and quantum communication. Their optical accessibility is however limited due to their out-of-plane transition dipole moment. We thus propose to strengthen the coupling of dark excitons in two dimensional materials with out-of-plane resonant modes of a cavity at room temperature, by engineering the anisotropy in the Purcell factor. A silica micro-disk characterised by high confinement of light in small modal volume, high Q-factor and free spectral range is used to couple to the excitons in monolayer transition metal dichalcogenides. We show numerically that the tapering of sidewalls of the micro-disk is an extremely versatile route for achieving the selective coupling of whispering gallery modes to light emitted from out-of-plane dipoles to the detriment of that from in-plane ones for four representative monolayer transition metal dichalcogenides.
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Submitted 24 August, 2021;
originally announced August 2021.
