Showing 1–14 of 14 results for author: Mokhov, E N

Probing Remote Nuclear Magnetic Moments in hBN with VB Electron Spin

Authors: G. V. Mamin, E. V. Dmitrieva, F. F. Murzakhanov, I. N. Gracheva, E. N. Mokhov, I. I. Vlasov, M. R. Gafurov, U. Gerstmann, V. A. Soltamov

Abstract: Since the initial discovery of optically addressable spins of the negatively charged boron vacancy defect (VB) in hexagonal boron nitride (hBN), substantial progress has been made, enabling promising applications in quantum sensing, information processing, and simulations. A deep understanding of the VB (electron): hBN (nuclear) spin systems is crucial for realizing these potentials. In this artic… ▽ More Since the initial discovery of optically addressable spins of the negatively charged boron vacancy defect (VB) in hexagonal boron nitride (hBN), substantial progress has been made, enabling promising applications in quantum sensing, information processing, and simulations. A deep understanding of the VB (electron): hBN (nuclear) spin systems is crucial for realizing these potentials. In this article, we employ Electron Nuclear Double Resonance (ENDOR) to demonstrate the sensing of dis tant nuclear spins via the VB electron spin. We identify the nature and localization of the probed nuclear magnetic moments as 14N spins localized 0.4 nm away from the vacancy and resolve the energies of the corresponding interactions. Density Functional Theory (DFT) calculations further confirm these findings, providing a detailed description of the interactions between the VB electron spin and surrounding nitrogen atoms in different shells. The results establish the VB electron spin as a promising tool for developing novel van der Waals material-based nuclear magnetic resonance (NMR) probes, advancing the understanding of spin physics in hBN, and unlocking its potential to study distant nuclear spin interactions in the host. △ Less

Submitted 9 April, 2025; originally announced April 2025.

Optical Spin Initialization of Nitrogen Vacancy Centers in a 28Si-Enriched 6H-SiC Crystal for Quantum Technologies

Authors: F. F. Murzakhanov, M. A. Sadovnikova, G. V. Mamin, D. V. Shurtakova, E. N. Mokhov, O. P. Kazarova, M. R. Gafurov

Abstract: High-spin defect centers in crystal matrices are used in quantum computing technologies, highly sensitive sensors, and single-photon sources. In this work, optically active nitrogen-vacancy color centers NV in a 28Si-enriched (nuclear spin I = 0) 6H-28SiC crystal have been studied using the photoinduced (980 nm) high-frequency (94 GHz, 3.4 T) pulsed electron paramagnetic resonance method at a temp… ▽ More High-spin defect centers in crystal matrices are used in quantum computing technologies, highly sensitive sensors, and single-photon sources. In this work, optically active nitrogen-vacancy color centers NV in a 28Si-enriched (nuclear spin I = 0) 6H-28SiC crystal have been studied using the photoinduced (980 nm) high-frequency (94 GHz, 3.4 T) pulsed electron paramagnetic resonance method at a temperature of 150 K. Three structurally nonequivalent types of NV- centers with axial symmetry have been identified and their spectroscopic parameters have been determined. Long spin-lattice, T1=1.3 ms, and spin-spin, T2=59 us, ensemble relaxation times of NV- centers with extremely narrow (450 kHz) absorption lines allow highly selective excitation of resonant transitions between sublevels caused by the weak hyperfine interaction (A = 1 MHz) with 14N (I = 1) nuclei for the quantum manipulation of the electron spin magnetization. △ Less

Submitted 18 July, 2024; originally announced July 2024.

Journal ref: JETP Letters 119.8 (2024): 593-598

Exploring the Properties of the V_B^- Defect in hBN: Optical Spin Polarization, Rabi Oscillations, and Coherent Nuclei Modulation

Authors: Irina N. Gracheva, Margarita A. Sadovnikova, Fadis F. Murzakhanov, Georgy V. Mamin, Eduard I. Baibekov, Evgeniy N. Mokhov

Abstract: Optically active point defects in semiconductors have received great attention in the field of solid-state quantum technologies. Hexagonal boron nitride, with an ultra-wide band gap E_g = 6 eV, containing a negatively charged boron vacancy (V_B^-) with unique spin, optical, and coherent properties presents a new two-dimensional platform for the implementation of quantum technologies. This work est… ▽ More Optically active point defects in semiconductors have received great attention in the field of solid-state quantum technologies. Hexagonal boron nitride, with an ultra-wide band gap E_g = 6 eV, containing a negatively charged boron vacancy (V_B^-) with unique spin, optical, and coherent properties presents a new two-dimensional platform for the implementation of quantum technologies. This work establishes the value of V_B^ - spin polarization under optical pumping with λext = 532 nm laser using high-frequency (νmw = 94 GHz) electron paramagnetic resonance (EPR) spectroscopy. In optimal conditions polarization was found to be P = 38.4 %. Our study reveals that Rabi oscillations induced on polarized spin states persist for up to 30-40 microseconds, which is nearly two orders of magnitude longer than what was previously reported. Analysis of the coherent electron-nuclear interaction through the observed electron spin echo envelope modulation (ESEEM) made it possible to detect signals from remote nitrogen and boron nuclei, and to establish a corresponding quadrupole coupling constant Cq = 180 kHz related to nuclear quadrupole moment of 14N. These results have fundamental importance for understanding spin properties of boron vacancy. △ Less

Submitted 13 May, 2023; originally announced May 2023.

Symmetry of the Hyperfine and Quadrupole Interactions of Boron Vacancies in a Hexagonal Boron Nitride

Authors: Irina N. Gracheva, Fadis F. Murzakhanov, Georgy V. Mamin, Margarita A. Sadovnikova, Bulat F. Gabbasov, Evgeniy N. Mokhov, Marat R. Gafurov

Abstract: The concept of optically addressable spin states of deep level defects in wide band gap materials is successfully applied for the development of quantum technologies. Recently discovered negatively charged boron vacancy defects (VB) in hexagonal boron nitride (hBN) potentially allow a transfer of this concept onto atomic thin layers due to the van der Waals nature of the defect host. Here, we expe… ▽ More The concept of optically addressable spin states of deep level defects in wide band gap materials is successfully applied for the development of quantum technologies. Recently discovered negatively charged boron vacancy defects (VB) in hexagonal boron nitride (hBN) potentially allow a transfer of this concept onto atomic thin layers due to the van der Waals nature of the defect host. Here, we experimentally explore all terms of the VB spin Hamiltonian reflecting interactions with the three nearest nitrogen atoms by means of conventional electron spin resonance and high frequency (94 GHz) electron-nuclear double resonance. We establish symmetry, anisotropy, and principal values of the corresponding hyperfine interaction (HFI) and nuclear quadrupole interaction (NQI). The HFI can be expressed in the axially symmetric form as Aperp = 45.5 MHz and Apar = 87 MHz, while the NQI is characterized by quadrupole coupling constant Cq = 1.96 MHz with slight rhombisity parameter n = (Pxx - Pyy)/Pzz = -0.070. Utilizing a conventional approach based on a linear combination of atomic orbitals and HFI values measured here, we reveal that almost all spin density (84 %) of the VB electron spin is localized on the three nearest nitrogen atoms. Our findings serve as valuable spectroscopic data and direct experimental demonstration of the VB spin localization in a single two dimensional BN layer. △ Less

Submitted 17 February, 2023; originally announced February 2023.

Inverted fine structure of a 6H-SiC qubit enabling robust spin-photon interface

Authors: I. D. Breev, Z. Shang, A. V. Poshakinskiy, H. Singh, Y. Berencén, M. Hollenbach, S. S. Nagalyuk, E. N. Mokhov, R. A. Babunts, P. G. Baranov, D. Suter, S. A. Tarasenko, G. V. Astakhov, A. N. Anisimov

Abstract: Optically controllable solid-state spin qubits are one of the basic building blocks for applied quantum technology. Efficient extraction of emitted photons and a robust spin-photon interface are crucial for the realization of quantum sensing protocols and essential for the implementation of quantum repeaters. Though silicon carbide (SiC) is a very promising material platform hosting highly-coheren… ▽ More Optically controllable solid-state spin qubits are one of the basic building blocks for applied quantum technology. Efficient extraction of emitted photons and a robust spin-photon interface are crucial for the realization of quantum sensing protocols and essential for the implementation of quantum repeaters. Though silicon carbide (SiC) is a very promising material platform hosting highly-coherent silicon vacancy spin qubits, a drawback for their practical application is the unfavorable ordering of the electronic levels in the optically excited state. Here, we demonstrate that due to polytypism of SiC, a particular type of silicon vacancy qubits in 6H-SiC possesses an unusual inverted fine structure. This results in the directional emission of light along the hexagonal crystallographic axis, making photon extraction more efficient and integration into photonic structures technologically straightforward. From the angular polarization dependencies of the emission, we reconstruct the spatial symmetry and determine the optical selection rules depending on the local deformation and spin-orbit interaction, enabling direct implementation of robust spin-photon entanglement schemes. Furthermore, the inverted fine structure leads to unexpected behavior of the spin readout contrast. It vanishes and recovers with lattice cooling due to two competing optical spin pumping mechanisms. Our experimental and theoretical approaches provide a deep insight into the optical and spin properties of atomic-scale qubits in SiC required for quantum communication and distributed quantum information processing. △ Less

Submitted 14 July, 2021; originally announced July 2021.

Comments: 11 pages, 7 figures

Stress-controlled zero-field spin splitting in silicon carbide

Authors: I. D. Breev, A. V. Poshakinskiy, V. V. Yakovleva, S. S. Nagalyuk, E. N. Mokhov, R. Hübner, G. V. Astakhov, P. G. Baranov, A. N. Anisimov

Abstract: We report the influence of static mechanical deformation on the zero-field splitting of silicon vacancies in silicon carbide at room temperature. We use AlN/6H-SiC heterostructures deformed by growth conditions and monitor the stress distribution as a function of distance from the heterointerface with spatially-resolved confocal Raman spectroscopy. The zero-field splitting of the V1/V3 and V2 cent… ▽ More We report the influence of static mechanical deformation on the zero-field splitting of silicon vacancies in silicon carbide at room temperature. We use AlN/6H-SiC heterostructures deformed by growth conditions and monitor the stress distribution as a function of distance from the heterointerface with spatially-resolved confocal Raman spectroscopy. The zero-field splitting of the V1/V3 and V2 centers in 6H-SiC, measured by optically-detected magnetic resonance, reveal significant changes at the heterointerface compared to the bulk value. This approach allows unambiguous determination of the spin-deformation interaction constant, which turns out to be $0.75 \, \mathrm{GHz}$ for the V1/V3 centers and $0.5 \, \mathrm{GHz}$ for the V2 centers. Provided piezoelectricity of AlN, our results offer a strategy to realize the on-demand fine tuning of spin transition energies in SiC by deformation. △ Less

Submitted 8 December, 2020; originally announced December 2020.

Comments: 13 pages, 3 figures

Journal ref: Appl. Phys. Lett. 118, 084003 (2021)

Stress distribution at the AlN/SiC heterointerface probed by Raman spectroscopy

Authors: I. D. Breev, K. V. Likhachev, V. V. Yakovleva, R. Hübner, G. V. Astakhov, P. G. Baranov, E. N. Mokhov, A. N. Anisimov

Abstract: We grow AlN/4H-SiC and AlN/6H-SiC heterostructures by physical vapor deposition and characterize the heterointerface with nanoscale resolution. Furthermore, we investigate the spatial stress and strain distribution in these heterostructures using confocal Raman spectroscopy. We measure the spectral shifts of various vibrational Raman modes across the heterointerface and along the entire depth of t… ▽ More We grow AlN/4H-SiC and AlN/6H-SiC heterostructures by physical vapor deposition and characterize the heterointerface with nanoscale resolution. Furthermore, we investigate the spatial stress and strain distribution in these heterostructures using confocal Raman spectroscopy. We measure the spectral shifts of various vibrational Raman modes across the heterointerface and along the entire depth of the 4H- and 6H-SiC layers. Using the earlier experimental prediction for the phonon-deformation potential constants, we determine the stress tensor components in SiC as a function of the distance from the AlN/SiC heterointerface. In spite that the lattice parameter of SiC is smaller than that of AlN, the SiC layers are compressively strained at the heterointerface. This counterintuitive behavior is explained by different coefficients of thermal expansion of SiC and AlN when the heterostructures are cooled from growth to room temperature. The compressive stress values are maximum at the heterointerface, approaching one GPa, and relaxes to the equilibrium value on the scale of several tens of microns from the heterointerface. △ Less

Submitted 27 November, 2020; originally announced November 2020.

Comments: 19 pages, 6 figures, 3 table

Journal ref: Journal of Applied Physics 129, 055304 (2021)

Experimental characterization of spin-3/2 silicon vacancy centers in 6H-SiC

Authors: Harpreet Singh, Andrei N. Anisimov, Sergei S. Nagalyuk, Eugenii N. Mokhov, Pavel G. Baranov, Dieter Suter

Abstract: Silicon carbide (SiC) hosts many interesting defects that can potentially serve as qubits for a range of advanced quantum technologies. Some of them have very interesting properties, making them potentially useful, e.g. as interfaces between stationary and flying qubits. Here we present a detailed overview of the relevant properties of the spins in silicon vacancies of the 6H-SiC polytype. This in… ▽ More Silicon carbide (SiC) hosts many interesting defects that can potentially serve as qubits for a range of advanced quantum technologies. Some of them have very interesting properties, making them potentially useful, e.g. as interfaces between stationary and flying qubits. Here we present a detailed overview of the relevant properties of the spins in silicon vacancies of the 6H-SiC polytype. This includes the temperature-dependent photoluminescence, optically detected magnetic resonance, and the relaxation times of the longitudinal and transverse components of the spins, during free precession as well as under the influence of different refocusing schemes. △ Less

Submitted 28 April, 2020; v1 submitted 19 January, 2020; originally announced January 2020.

Comments: 9 pages, 13 figures

Journal ref: Phys. Rev. B 101, 134110 (2020)

Excitation and coherent control of spin qudit modes with sub-MHz spectral resolution

Authors: V. A. Soltamov, C. Kasper, A. V. Poshakinskiy, A. N. Anisimov, E. N. Mokhov, A. Sperlich, S. A. Tarasenko, P. G. Baranov, G. V. Astakhov, V. Dyakonov

Abstract: Quantum bit or qubit is a two-level system, which builds the foundation for quantum computation, simulation, communication and sensing. Quantum states of higher dimension, i.e., qutrits (D = 3) and especially qudits (D = 4 or higher), offer significant advantages. Particularly, they can provide noise-resistant quantum cryptography, simplify quantum logic and improve quantum metrology. Flying and s… ▽ More Quantum bit or qubit is a two-level system, which builds the foundation for quantum computation, simulation, communication and sensing. Quantum states of higher dimension, i.e., qutrits (D = 3) and especially qudits (D = 4 or higher), offer significant advantages. Particularly, they can provide noise-resistant quantum cryptography, simplify quantum logic and improve quantum metrology. Flying and solid-state qudits have been implemented on the basis of photonic chips and superconducting circuits, respectively. However, there is still a lack of room-temperature qudits with long coherence time and high spectral resolution. The silicon vacancy centers in silicon carbide (SiC) with spin S = 3/2 are quite promising in this respect, but until now they were treated as a canonical qubit system. Here, we apply a two-frequency protocol to excite and image multiple qudit modes in a SiC spin ensemble under ambient conditions. Strikingly, their spectral width is about one order of magnitude narrower than the inhomogeneous broadening of the corresponding spin resonance. By applying Ramsey interferometry to these spin qudits, we achieve a spectral selectivity of 600 kHz and a spectral resolution of 30 kHz. As a practical consequence, we demonstrate absolute DC magnetometry insensitive to thermal noise and strain fluctuations. △ Less

Submitted 26 July, 2018; originally announced July 2018.

Journal ref: Nat. Commun. 10, 1678 (2019)

Spin and optical properties of silicon vacancies in silicon carbide (a review)

Authors: S. A. Tarasenko, A. V. Poshakinskiy, D. Simin, V. A. Soltamov, E. N. Mokhov, P. G. Baranov, V. Dyakonov, G. V. Astakhov

Abstract: We discuss the fine structure and spin dynamics of spin-3/2 centers associated with silicon vacancies in silicon carbide. The centers have optically addressable spin states which makes them highly promising for quantum technologies. The fine structure of the spin centers turns out to be highly sensitive to mechanical pressure, external magnetic and electric fields, temperature variation, etc., whi… ▽ More We discuss the fine structure and spin dynamics of spin-3/2 centers associated with silicon vacancies in silicon carbide. The centers have optically addressable spin states which makes them highly promising for quantum technologies. The fine structure of the spin centers turns out to be highly sensitive to mechanical pressure, external magnetic and electric fields, temperature variation, etc., which can be utilized for efficient room-temperature sensing, particularly by purely optical means or through the optically detected magnetic resonance. We discuss the experimental achievements in magnetometry and thermometry based on the spin state mixing at level anticrossings in an external magnetic field and the underlying microscopic mechanisms. We also discuss spin fluctuations in an ensemble of vacancies caused by interaction with environment. △ Less

Submitted 18 July, 2017; originally announced July 2017.

Comments: 10 pages, for a special issue of Physica Status Solidi B

All-optical dc nanotesla magnetometry using silicon vacancy fine structure in isotopically purified silicon carbide

Authors: D. Simin, V. A. Soltamov, A. V. Poshakinskiy, A. N. Anisimov, R. A. Babunts, D. O. Tolmachev, E. N. Mokhov, M. Trupke, S. A. Tarasenko, A. Sperlich, P. G. Baranov, V. Dyakonov, G. V. Astakhov

Abstract: We uncover the fine structure of a silicon vacancy in isotopically purified silicon carbide (4H-$^{28}$SiC) and find extra terms in the spin Hamiltonian, originated from the trigonal pyramidal symmetry of this spin-3/2 color center. These terms give rise to additional spin transitions, which are otherwise forbidden, and lead to a level anticrossing in an external magnetic field. We observe a sharp… ▽ More We uncover the fine structure of a silicon vacancy in isotopically purified silicon carbide (4H-$^{28}$SiC) and find extra terms in the spin Hamiltonian, originated from the trigonal pyramidal symmetry of this spin-3/2 color center. These terms give rise to additional spin transitions, which are otherwise forbidden, and lead to a level anticrossing in an external magnetic field. We observe a sharp variation of the photoluminescence intensity in the vicinity of this level anticrossing, which can be used for a purely all-optical sensing of the magnetic field. We achieve dc magnetic field sensitivity of 87 nT Hz$^{-1/2}$ within a volume of $3 \times 10^{-7}$ mm$^{3}$ at room temperature and demonstrate that this contactless method is robust at high temperatures up to at least 500 K. As our approach does not require application of radiofrequency fields, it is scalable to much larger volumes. For an optimized light-trapping waveguide of 3 mm$^{3}$ the projection noise limit is below 100 fT Hz$^{-1/2}$. △ Less

Submitted 28 May, 2016; v1 submitted 15 November, 2015; originally announced November 2015.

Comments: 12 pages, 6 figures; additional experimental data and an extended theoretical analysis are added in the second version

Journal ref: Phys. Rev. X 6, 031014 (2016)

Optically addressable silicon vacancy-related spin centers in rhombic silicon carbide with high breakdown characteristics and ENDOR evidence of their structure

Authors: V. A. Soltamov, B. V. Yavkin, D. O. Tolmachev, R. A. Babunts, A. G. Badalyan, V. Yu. Davydov, E. N. Mokhov, I. I. Proskuryakov, S. B. Orlinskii, P. G. Baranov

Abstract: We discovered uniaxial oriented centers in silicon carbide having unusual performance. Here we demonstrate that the family of silicon-vacancy related centers with $S= 3/2$ in rhombic 15R-SiC crystalline matrix possess unique characteristics such as ODMR contrast and optical spin alignment existing at temperatures up to 250$^\circ$C. Thus the concept of optically addressable silicon vacancy related… ▽ More We discovered uniaxial oriented centers in silicon carbide having unusual performance. Here we demonstrate that the family of silicon-vacancy related centers with $S= 3/2$ in rhombic 15R-SiC crystalline matrix possess unique characteristics such as ODMR contrast and optical spin alignment existing at temperatures up to 250$^\circ$C. Thus the concept of optically addressable silicon vacancy related centers with half integer ground spin state is extended to the wide class of SiC rhombic polytypes. The structure of these centers, which is a fundamental problem for quantum applications, has been established using high frequency ENDOR. It has been shown that a family of siliconvacancy related centers is a negatively charged silicon vacancy in the paramagnetic state with the spin $S= 3/2$, V$_\textrm{Si}^-$, perturbed by neutral carbon vacancy in non-paramagnetic state, V$_\textrm{C}^0$, having no covalent bond with the silicon vacancy and located adjacently to the silicon vacancy on the c crystal axis. △ Less

Submitted 18 June, 2015; originally announced June 2015.

Comments: 6 pages, 5 figures

Room-temperature near-infrared silicon carbide nanocrystalline emitters based on optically aligned spin defects

Authors: A. Muzha, F. Fuchs, N. V. Tarakina, D. Simin, M. Trupke, V. A. Soltamov, E. N. Mokhov, P. G. Baranov, V. Dyakonov, A. Krueger, G. V. Astakhov

Abstract: Bulk silicon carbide (SiC) is a very promising material system for bio-applications and quantum sensing. However, its optical activity lies beyond the near infrared spectral window for in-vivo imaging and fiber communications due to a large forbidden energy gap. Here, we report the fabrication of SiC nanocrystals and isolation of different nanocrystal fractions ranged from 600 nm down to 60 nm in… ▽ More Bulk silicon carbide (SiC) is a very promising material system for bio-applications and quantum sensing. However, its optical activity lies beyond the near infrared spectral window for in-vivo imaging and fiber communications due to a large forbidden energy gap. Here, we report the fabrication of SiC nanocrystals and isolation of different nanocrystal fractions ranged from 600 nm down to 60 nm in size. The structural analysis reveals further fragmentation of the smallest nanocrystals into ca. 10-nm-size clusters of high crystalline quality, separated by amorphization areas. We use neutron irradiation to create silicon vacancies, demonstrating near infrared photoluminescence. Finally, we detect, for the first time, room-temperature spin resonances of these silicon vacancies hosted in SiC nanocrystals. This opens intriguing perspectives to use them not only as in-vivo luminescent markers, but also as magnetic field and temperature sensors, allowing for monitoring various physical, chemical and biological processes. △ Less

Submitted 2 September, 2014; originally announced September 2014.

Comments: 5 pages, 4 figures

Intrinsic defects in silicon carbide LED as a perspective room temperature single photon source in near infrared

Authors: F. Fuchs, V. A. Soltamov, S. Vaeth, P. G. Baranov, E. N. Mokhov, G. V. Astakhov, V. Dyakonov

Abstract: Generation of single photons has been demonstrated in several systems. However, none of them satisfies all the conditions, e.g. room temperature functionality, telecom wavelength operation, high efficiency, as required for practical applications. Here, we report the fabrication of light emitting diodes (LEDs) based on intrinsic defects in silicon carbide (SiC). To fabricate our devices we used a s… ▽ More Generation of single photons has been demonstrated in several systems. However, none of them satisfies all the conditions, e.g. room temperature functionality, telecom wavelength operation, high efficiency, as required for practical applications. Here, we report the fabrication of light emitting diodes (LEDs) based on intrinsic defects in silicon carbide (SiC). To fabricate our devices we used a standard semiconductor manufacturing technology in combination with high-energy electron irradiation. The room temperature electroluminescence (EL) of our LEDs reveals two strong emission bands in visible and near infrared (NIR), associated with two different intrinsic defects. As these defects can potentially be generated at a low or even single defect level, our approach can be used to realize electrically driven single photon source for quantum telecommunication and information processing. △ Less

Submitted 12 December, 2012; originally announced December 2012.

Journal ref: Sci. Rep. 3, 1637 (2013)