Showing 1–2 of 2 results for author: Mohd, A S
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Tuning spinterface properties in Iron/Fullerene thin films
Authors:
Srijani Mallik,
Amir Syed Mohd.,
Alexandros Koutsioubas,
Stefan Mattauch,
Biswarup Satpati,
Thomas Bruckel,
Subhankar Bedanta
Abstract:
In ferromagnetic (FM) metal/organic semiconductor (OSC) heterostructures charge transfer can occur which leads to induction of magnetism in the non-magnetic OSC. This phenomenon has been described by the change in the density of states in the OSC which leads to a finite magnetic moment at the OSC interface and it is called the "spinterface". One of the main motivation in this field of organic spin…
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In ferromagnetic (FM) metal/organic semiconductor (OSC) heterostructures charge transfer can occur which leads to induction of magnetism in the non-magnetic OSC. This phenomenon has been described by the change in the density of states in the OSC which leads to a finite magnetic moment at the OSC interface and it is called the "spinterface". One of the main motivation in this field of organic spintronics is how to control the magnetic moment in the spinterface. In this regard, there are several open questions such as (i) which combination of FM and OSC can lead to more moment at the spinterface? (ii) Is the thickness of OSC also important? (iii) How does the spinterface moment vary with the FM thickness? (iv) Does the crystalline quality of the FM matters? (v) What is the effect of spinterface on magnetization reversal, domain structure and anisotropy? In this context, we have tried to answer the last three issues in this paper by studying Fe/C$_{60}$ bilayers of variable Fe thickness deposited on Si substrates. We find that both the induced moment and thickness of the spinterface vary proportionally with the Fe thickness. Such behavior is explained in terms of the growth quality of the Fe layer on the native oxide of the Si (100) substrate. The magnetization reversal, domain structure and anisotropy of these bilayer samples were studied and compared with their respective reference samples without having the C$_{60}$ layer. It is observed that the formation of spinterface leads to reduction in uniaxial anisotropy in Fe/C$_{60}$ on Si (100) in comparison to their reference samples.
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Submitted 18 July, 2019;
originally announced July 2019.
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A versatile UHV transport and measurement chamber for neutron reflectometry under UHV conditions
Authors:
A. Syed Mohd,
S. Pütter,
S. Mattauch,
A. Koutsioubas,
H. Schneider,
A. Weber,
T. Brückel
Abstract:
We report on a versatile mini ultra-high vacuum (UHV) chamber which is designed to be used on the MAgnetic Reflectometer with high Incident Angle of the Jülich Centre for Neutron Science at Heinz Maier-Leibnitz Zentrum in Garching, Germany. Samples are prepared in the adjacent thin film laboratory by molecular beam epitaxy and moved into the compact chamber for transfer without exposure to ambient…
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We report on a versatile mini ultra-high vacuum (UHV) chamber which is designed to be used on the MAgnetic Reflectometer with high Incident Angle of the Jülich Centre for Neutron Science at Heinz Maier-Leibnitz Zentrum in Garching, Germany. Samples are prepared in the adjacent thin film laboratory by molecular beam epitaxy and moved into the compact chamber for transfer without exposure to ambient air. The chamber is based on DN 40 CF flanges and equipped with sapphire view ports, a small getter pump, and a wobble stick, which serves also as sample holder. Here, we present polarized neutron reflectivity measurements which have been performed on Co thin films at room temperature in UHV and in ambient air in a magnetic field of 200 mT and in the Q-range of 0.18 Å$^{-1}$. The results confirm that the Co film is not contaminated during the polarized neutron reflectivity measurement. Herewith it is demonstrated that the mini UHV transport chamber also works as a measurement chamber which opens new possibilities for polarized neutron measurements under UHV conditions.
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Submitted 10 January, 2017;
originally announced January 2017.
