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Laboratory and beam-test performance study of a 55$~μ$m pitch iLGAD sensor bonded to a Timepix3 readout chip
Authors:
Peter Svihra,
Richard Bates,
Justus Braach,
Eric Buschmann,
Dominik Dannheim,
Dima Maneuski,
Neil Moffat,
Younes Otarid
Abstract:
This contribution reports on characterisation results of a large-area (2$~\mathrm{cm}^2$) small pitch (55$~μ$m) inverse Low-Gain Avalanche Detector (iLGAD), bonded to a Timepix3 readout chip. The ilGAD sensors were produced by Micron Semiconductor Ltd with the goal to obtain good gain uniformity and maximise the fill-factor -- an issue present with standard small-pitch LGAD designs. We have conduc…
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This contribution reports on characterisation results of a large-area (2$~\mathrm{cm}^2$) small pitch (55$~μ$m) inverse Low-Gain Avalanche Detector (iLGAD), bonded to a Timepix3 readout chip. The ilGAD sensors were produced by Micron Semiconductor Ltd with the goal to obtain good gain uniformity and maximise the fill-factor -- an issue present with standard small-pitch LGAD designs. We have conducted detailed performance evaluations using both X-ray calibrations and beam tests. An X-ray fluorescence setup has been used to obtain energy calibration and to identify the optimal operating settings of the new devices, whereas the extensive beam tests allowed for a detailed evaluation of the detector performance. The beam-tests were performed at the CERN SPS North Area H6 beamline, using a 120 GeV/c pion beam. The reference tracking and time-stamping is achieved by a Timepix3-based beam telescope setup.
The results show a gain of around 5 with very good uniformity, measured across the whole gain area, as well as a hit time resolution down to 1.3 ns without correcting for the time-walk effects. Furthermore, it is shown that the gain opens the possibility of a good X-ray energy resolution down to 4.5 keV.
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Submitted 8 January, 2025; v1 submitted 30 September, 2024;
originally announced September 2024.
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26.5 ps Time Resolution Using 50 μm Low Gain Avalanche Detectors Fabricated by Micron Semiconductor Ltd
Authors:
R. Moriya,
R. Bates,
M. Bullough,
N. Cooke,
A. Docheva,
L. Lombigit,
D. Maneuski,
R. McFeely,
N. Moffat
Abstract:
Low Gain Avalanche Detectors (LGADs) are silicon semiconductor sensors with an implanted thin p-doped multiplication layer that is designed to provide low gain. Most importantly, LGADs are specifically engineered to provide excellent spatial and temporal resolution simultaneously. The technology shows promising prospects of fulfilling the 4D tracking requirements of future high energy physics expe…
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Low Gain Avalanche Detectors (LGADs) are silicon semiconductor sensors with an implanted thin p-doped multiplication layer that is designed to provide low gain. Most importantly, LGADs are specifically engineered to provide excellent spatial and temporal resolution simultaneously. The technology shows promising prospects of fulfilling the 4D tracking requirements of future high energy physics experiments. Micron Semiconductor Ltd. has fabricated LGADs with an active thickness of 50 $μ$m. The electrical and timing performance has been measured and compared with devices fabricated at IMB-CNM for reference. 50 $μ$m thin LGADs by Micron Semiconductor Ltd. were measured to have a timing resolution in the region of 30 ps using a dedicated setup involving minimum ionising particles produced by Sr-90. Specifically, the best timing resolution of 26.5 ps was measured at a bias voltage of 200 V at -30°C.
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Submitted 9 October, 2023;
originally announced October 2023.
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Overview of CNM LGAD results: Boron Si-on-Si and epitaxial wafers
Authors:
Chiara Grieco,
Lucía Castillo García,
Albert Doblas Moreno,
Evangelos Leonidas Gkougkousis,
Sebastian Grinstein,
Salvador Hidalgo,
Neil Moffat,
Giulio Pellegrini,
Jairo Villegas Dominguez
Abstract:
Low Gain Avalanche Detectors (LGADs) are n-on-p silicon sensors with an extra p-layer below the collection electrode which provides signal amplification. When the primary electrons reach the amplification region new electron-hole pairs are created that enhance the generated signal. The moderate gain of these sensors, together with the relatively thin active region, provide precise time information…
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Low Gain Avalanche Detectors (LGADs) are n-on-p silicon sensors with an extra p-layer below the collection electrode which provides signal amplification. When the primary electrons reach the amplification region new electron-hole pairs are created that enhance the generated signal. The moderate gain of these sensors, together with the relatively thin active region, provide precise time information for minimum ionizing particles. To mitigate the effect of pile-up at the HL-LHC the ATLAS and CMS experiments have chosen the LGAD technology for the High Granularity Timing Detector (HGTD) and for the End-Cap Timing Layer (ETL), respectively. A full characterization of recent productions of LGAD sensors fabricated at CNM has been carried out before and after neutron irradiation up to 2.5 $\times$ 10$^{15}$ n$_{eq}$/cm$^{2}$ . Boron-doped sensors produced in epitaxial and Si-on-Si wafers have been studied. The results include their electrically characterization (IV and bias voltage stability) and performance studies (charge and time resolution) for single pad devices with a Sr-90 radioactive source set-up. The behaviour of the Inter-Pad region for irradiated 2 $\times$ 2 LGAD arrays, using the Transient Current Technique (TCT), is shown. The results indicate that the Si-on-Si devices with higher resistivity perform better than the epitaxial ones.
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Submitted 23 September, 2022;
originally announced September 2022.
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First Results for the pLGAD Sensor for Low-Penetrating Particles
Authors:
Waleed Khalid,
Manfred Valentan,
Albert Doblas,
David Flores,
Salvador Hidalgo,
Gertrud Konrad,
Johann Marton,
Neil Moffat,
Daniel Moser,
Sebastian Onder,
Giulio Pellegrini,
Jairo Villegas
Abstract:
Silicon sensors are the go-to technology for high-precision sensors in particle physics. But only recently low-noise silicon sensors with internal amplification became available. The so-called Low Gain Avalanche Detector (LGAD) sensors have been developed for applications in High Energy Physics, but lack two characteristics needed for the measurement of low-energy protons (<60 keV): a thin entranc…
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Silicon sensors are the go-to technology for high-precision sensors in particle physics. But only recently low-noise silicon sensors with internal amplification became available. The so-called Low Gain Avalanche Detector (LGAD) sensors have been developed for applications in High Energy Physics, but lack two characteristics needed for the measurement of low-energy protons (<60 keV): a thin entrance window (in the order of tens of nm) and the efficient amplification of signals created near the sensor's surface (in a depth below 1 um). In this paper we present the so-called proton Low Gain Avalanche Detector (pLGAD) sensor concept and some results from characterization of the first prototypes of the sensor. The pLGAD is specifically designed to detect low-energy protons, and other low-penetrating particles. It will have a higher detection efficiency than non-silicon technologies, and promises to be a lot cheaper and easier to operate than competing silicon technologies.
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Submitted 19 July, 2022; v1 submitted 13 July, 2022;
originally announced July 2022.
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Inverse Low Gain Avalanche Detector (iLGAD) Periphery Design for X-Ray Applications
Authors:
A. Doblas,
D. Flores,
S. Hidalgo,
N. Moffat,
G. Pellegrini,
D. Quirion,
J. Villegas,
D. Maneuski,
M. Ruat,
P. Fajardo
Abstract:
LGAD technology is established within the field of particle physics, as the baseline technology for the timing detectors of both the ATLAS and CMS upgrades at the HL-LHC. Pixelated LGADs have been proposed for the High Granularity Timing Detector (HGTD) and for the Endcap Timing Layer (ETL) of the ATLAS and CMS experiments, respectively. The drawback of segmenting an LGAD is the non-gain area betw…
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LGAD technology is established within the field of particle physics, as the baseline technology for the timing detectors of both the ATLAS and CMS upgrades at the HL-LHC. Pixelated LGADs have been proposed for the High Granularity Timing Detector (HGTD) and for the Endcap Timing Layer (ETL) of the ATLAS and CMS experiments, respectively. The drawback of segmenting an LGAD is the non-gain area between pixels and the consequent reduction in the fill factor. In this sense, inverse LGAD (iLGAD) technology has been proposed by IMB-CNM to enhance the fill factor and to reach excellent tracking capabilities. In this work, we explore the use of iLGAD sensors for X-Ray applications by developing a new generation of iLGADs. The periphery of the first iLGAD generation is optimized by means of TCAD tools, making them suitable for X-Ray irradiations thanks to the double side optimization. The fabricated iLGAD sensors exhibit good electrical performances before and after an X-Ray irradiation. The second iLGAD generation is able to withstand the same voltage, as contrary to the first iLGAD generation after irradiation.
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Submitted 1 June, 2022; v1 submitted 3 February, 2022;
originally announced February 2022.
