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Emergence of the electronic states by quantum charge fluctuations in electron-doped high-$T_c$ cuprate superconductors
Authors:
Hiroshi Yamaguchi,
Yudai Miyai,
Yuki. Tsubota,
Masashi Atira,
Hitoshi Sato,
Dongjoon Song,
Kiyoshia Tanakae,
Kenya Shimada,
Shin-ichiro Ideta
Abstract:
The origin of electron-boson interactions is a key to understanding the mechanism of high-$T_c$ superconductivity in cuprates. While interactions with phonons and magnetic fluctuations are widely considered to mediate electron pairing in cuprates, the role of charge fluctuations, which is one of the fundamental degrees of freedom, remains unclear. Here, we performed angle-resolved photoemission sp…
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The origin of electron-boson interactions is a key to understanding the mechanism of high-$T_c$ superconductivity in cuprates. While interactions with phonons and magnetic fluctuations are widely considered to mediate electron pairing in cuprates, the role of charge fluctuations, which is one of the fundamental degrees of freedom, remains unclear. Here, we performed angle-resolved photoemission spectroscopy (ARPES) and angle-resolved inverse photoemission spectroscopy (AR-IPES) to investigate the electronic structure of the occupied and unoccupied states, respectively, in the electron-doped high-$T_c$ cuprate superconductor Nd$_{2-x}$Ce$_x$CuO$_4$. We found emergent spectral features in both the occupied (ARPES) and unoccupied states (AR-IPES), which are likely induced by charge fluctuations. The present study paves the way for a deeper understanding of the relationship between quantum charge fluctuations and superconductivity.
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Submitted 22 May, 2025; v1 submitted 18 May, 2025;
originally announced May 2025.
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Probing the Interaction Between Topological and Rashba-like Surface States in MnBi$_2$Te$_4$ Through Sn Doping
Authors:
A. V. Tarasov,
D. A. Estyunin,
A. G. Rybkin,
A. S. Frolov,
A. I. Sergeev,
A. V. Eryzhenkov,
V. V. Anferova,
T. P. Estyunina,
D. A. Glazkova,
K. A. Kokh,
V. A. Golyashov,
O. E. Tereshchenko,
S. Ideta,
Y. Miyai,
Y. Kumar,
K. Shimada,
A. M. Shikin
Abstract:
The presence of Rashba-like surface states (RSS) in the electronic structure of topological insulators (TIs) has been a longstanding topic of interest due to their significant impact on electronic and spin structures. In this study, we investigate the interaction between topological and Rashba-like surface states (TSS and RSS) in Mn$_{1-x}$Sn$_x$Bi$_2$Te$_4$ systems using density functional theory…
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The presence of Rashba-like surface states (RSS) in the electronic structure of topological insulators (TIs) has been a longstanding topic of interest due to their significant impact on electronic and spin structures. In this study, we investigate the interaction between topological and Rashba-like surface states (TSS and RSS) in Mn$_{1-x}$Sn$_x$Bi$_2$Te$_4$ systems using density functional theory (DFT) calculations and high-resolution ARPES. Our findings reveal that increasing Sn concentration shifts RSS downward in energy, enhancing their influence on the electronic structure near the Fermi level. ARPES validates these predictions, capturing the evolution of RSS and their hybridization with TSS. Orbital analysis shows RSS are localized within the first three Te-Bi-Te trilayers, dominated by Bi $p$-orbitals, with evidence of the orbital Rashba effect enhancing spin-momentum locking. At higher Sn concentrations, RSS penetrate deeper into the crystal, driven by Sn $p$-orbital contributions. These results position Mn$_{1-x}$Sn$_x$Bi$_2$Te$_4$ as a tunable platform for tailoring electronic properties in spintronic and quantum technologies.
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Submitted 24 December, 2024;
originally announced December 2024.
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The electronic structure of Mn$_{1-x}$Pb$_x$Bi$_2$Te$_4$: experimental evidence of topological phase transition
Authors:
D. A. Estyunin,
T. P. Estyunina,
I. I. Klimovskikh,
K. A. Bokai,
V. A. Golyashov,
K. A. Kokh,
O. E. Tereshchenko,
S. Ideta,
Y. Miyai,
Y. Kumar,
T. Iwata,
T. Kosa,
T. Okuda,
K. Miyamoto,
K. Kuroda,
K. Shimada,
A. M. Shikin
Abstract:
This study investigates methods for controlling the physical properties of the intrinsic magnetic topological insulator MnBi$_2$Te$_4$ (MBT) by substituting Mn with Pb in Mn$_{1-x}$Pb$_x$Bi$_2$Te$_4$ (MPBT) solid solutions. This substitution enables tunable magnetic and electronic properties. Using various angle-resolved photoemission spectroscopy (ARPES) techniques, including spin-resolved and ci…
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This study investigates methods for controlling the physical properties of the intrinsic magnetic topological insulator MnBi$_2$Te$_4$ (MBT) by substituting Mn with Pb in Mn$_{1-x}$Pb$_x$Bi$_2$Te$_4$ (MPBT) solid solutions. This substitution enables tunable magnetic and electronic properties. Using various angle-resolved photoemission spectroscopy (ARPES) techniques, including spin-resolved and circular dichroism (CD) measurements, we analyzed the evolution of the electronic structure across different Pb concentrations, with a focus on topological phase transitions (TPT) near x = 50 %. Key indicators of TPT include the presence or absence of topological surface states (TSS) and bulk band gap closure. The results show a gradual decrease of the bulk band gap in the electronic structure of MPBT up to x = 40 %, where it nearly vanishes, followed by a constant gap value between 40 - 60 %, and its reopening above 80 %, which is accompanied by a transition of the electronic structure of MPBT to a PbBi$_2$Te$_4$-like electronic structure. TSS were observed at x less than 30 % and greater than 80 %, as confirmed by CD and spin-resolved ARPES data, but were absent near x = 55 %, suggesting a distinct topological phase - possibly semi-metallic or a trivial insulator with a narrow gap phase. These findings demonstrate the tunability of the electronic structure of MPBT, making it a promising candidate for topological and spintronic applications.
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Submitted 15 November, 2024;
originally announced November 2024.
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Phase transitions, Dirac and WSM states in $\mathrm{Mn}_{1-x} \mathrm{Ge}_x \mathrm{Bi}_2 \mathrm{Te}_4$
Authors:
A. M. Shikin,
N. L. Zaitsev,
T. P. Estyunina,
D. A. Estyunin,
A. G. Rybkin,
D. A. Glazkova,
I. I. Klimovskikh,
A. V. Eryzhenkov,
K. A. Kokh,
V. A. Golyashov,
O. E. Tereshchenko,
S. Ideta,
Y. Miyai,
T. Iwata,
T. Kosa,
K. Kuroda,
K. Shimada,
A. V. Tarasov
Abstract:
Using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT), an experimental and theoretical study of changes in the electronic structure (dispersion dependencies) and corresponding modification of the energy band gap at the Dirac point (DP) for topological insulator (TI) $\mathrm{Mn}_{1-x} \mathrm{Ge}_x \mathrm{Bi}_2 \mathrm{Te}_4$ have been carried out with gradua…
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Using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT), an experimental and theoretical study of changes in the electronic structure (dispersion dependencies) and corresponding modification of the energy band gap at the Dirac point (DP) for topological insulator (TI) $\mathrm{Mn}_{1-x} \mathrm{Ge}_x \mathrm{Bi}_2 \mathrm{Te}_4$ have been carried out with gradual replacement of magnetic Mn atoms by non-magnetic Ge atoms when concentration of the latter was varied from 10$\%$ to 75$\%$. It was shown that when Ge concentration increases then the bulk band gap decreases and reaches zero plateau in the concentration range of 45$\%$-60$\%$ while non-topological surface states (TSS) are present and exhibit an energy splitting of 100 and 70 meV in different types of measurements. It was also shown that TSS disappear from the measured band dispersions at a Ge concentration of about 40$\%$. DFT calculations of $\mathrm{Mn}_{1-x} \mathrm{Ge}_x \mathrm{Bi}_2 \mathrm{Te}_4$ band structure were carried out to identify the nature of observed band dispersion features and to analyze a possibility of magnetic Weyl semimetal state formation in this system. These calculations were performed for both antiferromagnetic (AFM) and ferromagnetic (FM) ordering types while the spin-orbit coupling (SOC) strength was varied or a strain (compression or tension) along the $c$-axis was applied. Calculations show that two different series of topological phase transitions (TPTs) may be implemented in this system depending on the magnetic ordering. At AFM ordering transition between TI and trivial insulator phase goes through the Dirac semimetal state, whereas for FM phase such route admits three intermediate states instead of one (TI - Dirac semimetal - Weyl semimetal - Dirac semimetal - trivial insulator).
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Submitted 21 June, 2024;
originally announced June 2024.
