Selective ionization of Rydberg atoms to reduce the energy spread of a cold atom focused ion beam
Authors:
Kaih T. Mitchell,
Allan Pennings,
Rory W. Speirs,
Christopher J. Billington,
Andrew J. McCulloch,
Alexander A. Wood,
Robert E. Scholten
Abstract:
The energy spread of a focused ion beam causes chromatic aberration that limits the focal spot size and resolution for imaging and fabrication. Ion beams based on photoionization of neutral atoms can have a much smaller energy spread and higher brightness than conventional liquid metal ion sources and are thus capable of higher resolution. We present a method for using selective ionization of Rydb…
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The energy spread of a focused ion beam causes chromatic aberration that limits the focal spot size and resolution for imaging and fabrication. Ion beams based on photoionization of neutral atoms can have a much smaller energy spread and higher brightness than conventional liquid metal ion sources and are thus capable of higher resolution. We present a method for using selective ionization of Rydberg atoms to reduce the beam energy spread in a cold atom focused ion beam. We produce experimental maps of the ionization rate of Rubidium-85 near the classical ionization threshold, predict the energy spread of an ion beam produced from these states and demonstrate energy spread reduction in situ in a focused ion beam. We use a novel method to measure the energy spread, using only components present in many commercial FIB systems. Selecting different states changed the energy spread by up to 50%, with opportunities to further reduce the energy spread by constructing a more favorable electric field gradient and finding atomic states with better ionization characteristics.
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Submitted 8 May, 2025;
originally announced May 2025.
3D-mapping and manipulation of photocurrent in an optoelectronic diamond device
Authors:
A. A. Wood,
D. J. McCloskey,
N. Dontschuk,
A. Lozovoi,
R. M. Goldblatt,
T. Delord,
D. A. Broadway,
J. -P. Tetienne,
B. C. Johnson,
K. T. Mitchell,
C. T. -K. Lew,
C. A. Meriles,
A. M. Martin
Abstract:
Characterising charge transport in a material is central to the understanding of its electrical properties, and can usually only be inferred from bulk measurements of derived quantities such as current flow. Establishing connections between host material impurities and transport properties in emerging electronics materials, such as wide bandgap semiconductors, demands new diagnostic methods tailor…
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Characterising charge transport in a material is central to the understanding of its electrical properties, and can usually only be inferred from bulk measurements of derived quantities such as current flow. Establishing connections between host material impurities and transport properties in emerging electronics materials, such as wide bandgap semiconductors, demands new diagnostic methods tailored to these unique systems, and the presence of optically-active defect centers in these materials offers a non-perturbative, in-situ characterisation system. Here, we combine charge-state sensitive optical microscopy and photoelectric detection of nitrogen-vacancy (NV) centres to directly image the flow of charge carriers inside a diamond optoelectronic device, in 3D and with temporal resolution. We optically control the charge state of background impurities inside the diamond on-demand, resulting in drastically different current flow such as filamentary channels nucleating from specific, defective regions of the device. We then optically engineered conducting channels that control carrier flow, key steps towards optically reconfigurable, wide bandgap designer optoelectronics. We anticipate our approach might be extended to probe other wide-bandgap semiconductors (SiC, GaN) relevant to present and emerging electronic technologies.
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Submitted 10 February, 2024;
originally announced February 2024.
