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Microscopic Relaxation Channels in Materials for Superconducting Qubits
Authors:
Anjali Premkumar,
Conan Weiland,
Sooyeon Hwang,
Berthold Jaeck,
Alexander P. M. Place,
Iradwikanari Waluyo,
Adrian Hunt,
Valentina Bisogni,
Jonathan Pelliciari,
Andi Barbour,
Mike S. Miller,
Paola Russo,
Fernando Camino,
Kim Kisslinger,
Xiao Tong,
Mark S. Hybertsen,
Andrew A. Houck,
Ignace Jarrige
Abstract:
Despite mounting evidence that materials imperfections are a major obstacle to practical applications of superconducting qubits, connections between microscopic material properties and qubit coherence are poorly understood. Here, we perform measurements of transmon qubit relaxation times $T_1$ in parallel with spectroscopy and microscopy of the thin polycrystalline niobium films used in qubit fabr…
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Despite mounting evidence that materials imperfections are a major obstacle to practical applications of superconducting qubits, connections between microscopic material properties and qubit coherence are poorly understood. Here, we perform measurements of transmon qubit relaxation times $T_1$ in parallel with spectroscopy and microscopy of the thin polycrystalline niobium films used in qubit fabrication. By comparing results for films deposited using three techniques, we reveal correlations between $T_1$ and grain size, enhanced oxygen diffusion along grain boundaries, and the concentration of suboxides near the surface. Physical mechanisms connect these microscopic properties to residual surface resistance and $T_1$ through losses arising from the grain boundaries and from defects in the suboxides. Further, experiments show that the residual resistance ratio can be used as a figure of merit for qubit lifetime. This comprehensive approach to understanding qubit decoherence charts a pathway for materials-driven improvements of superconducting qubit performance.
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Submitted 6 April, 2020;
originally announced April 2020.
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Limits with braid arrangements
Authors:
Matthew S. Miller,
Max Wakefield
Abstract:
We define a monoid structure on the set of $k$-equal arrangements and use this structure to define limits of braid arrangements. We compute the cohomology of the associated limits of rational models of the arrangements complex complements. We collect these complexes together into one complex by creating a new differential and product on their direct sum and show that the resulting complex is exact…
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We define a monoid structure on the set of $k$-equal arrangements and use this structure to define limits of braid arrangements. We compute the cohomology of the associated limits of rational models of the arrangements complex complements. We collect these complexes together into one complex by creating a new differential and product on their direct sum and show that the resulting complex is exact.
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Submitted 24 November, 2012;
originally announced November 2012.
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Equivalence classes of Latin squares and nets in CP^2
Authors:
Corey Dunn,
Matthew S. Miller,
Max Wakefield,
Sebastian Zwicknagl
Abstract:
The fundamental combinatorial structure of a net in CP^2 is its associated set of mutually orthogonal latin squares. We define equivalence classes of sets of orthogonal Latin squares by label equivalences of the lines of the corresponding net in CP^2. Then we count these equivalence classes for small cases. Finally, we prove that the realization spaces of these classes in CP^2 are empty to show…
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The fundamental combinatorial structure of a net in CP^2 is its associated set of mutually orthogonal latin squares. We define equivalence classes of sets of orthogonal Latin squares by label equivalences of the lines of the corresponding net in CP^2. Then we count these equivalence classes for small cases. Finally, we prove that the realization spaces of these classes in CP^2 are empty to show some non-existence results for 4-nets in CP^2.
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Submitted 9 September, 2008; v1 submitted 5 March, 2007;
originally announced March 2007.
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Anisotropic GaAs island phase grown on flat GaP: spontaneously formed quantum wire array
Authors:
B. Jonas Ohlsson,
Mark S. Miller,
Mats-Erik Pistol
Abstract:
A dense phase of GaAs wires forms in the early stages of strained growth on GaP,assembling from elongated Stranski-Krastanow islands.
The electron diffraction during growth is consistent with long, faceted GaAs islands that are anisotropically deformed without dislocations. The lateral wire period and long shapes are not predicted by published models, though we conclude that the island orienta…
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A dense phase of GaAs wires forms in the early stages of strained growth on GaP,assembling from elongated Stranski-Krastanow islands.
The electron diffraction during growth is consistent with long, faceted GaAs islands that are anisotropically deformed without dislocations. The lateral wire period and long shapes are not predicted by published models, though we conclude that the island orientation is picked out by facet energy inequivalencies not present in the analogous system of Ge islands on Si.
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Submitted 9 October, 1997;
originally announced October 1997.
