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Control of intervalley scattering in Bi$_2$Te$_3$ via temperature-dependent band renormalization
Authors:
A. Jabed,
F. Goto,
B. Frimpong,
D. Armanno,
A. Longa,
M. Michiardi,
A. Damascelli,
P. Hofmann,
G. Jargot,
H. Ibrahim,
F. Légaré,
N. Gauthier,
S. Beaulieu,
F. Boschini
Abstract:
The control of out-of-equilibrium electron dynamics in topological insulators is essential to unlock their potential in next-generation quantum technologies. However, the role of temperature on the renormalization of the electronic band structure and, consequently, on electron scattering processes is still elusive. Here, using high-resolution time- and angle-resolved photoemission spectroscopy (TR…
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The control of out-of-equilibrium electron dynamics in topological insulators is essential to unlock their potential in next-generation quantum technologies. However, the role of temperature on the renormalization of the electronic band structure and, consequently, on electron scattering processes is still elusive. Here, using high-resolution time- and angle-resolved photoemission spectroscopy (TR-ARPES), we show that even a modest ($\sim$15 meV) renormalization of the conduction band of Bi$_2$Te$_3$ can critically affect bulk and surface electron scattering processes. Supported by a kinetic Monte Carlo toy-model, we show that temperature-induced changes in the bulk band structure modulate the intervalley electron-phonon scattering rate, reshaping the out-of-equilibrium response. This work establishes temperature as an effective control knob for engineering scattering pathways in topological insulators.
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Submitted 3 June, 2025;
originally announced June 2025.
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Enhanced coherence and layer-selective charge order in a trilayer cuprate superconductor
Authors:
S. Smit,
M. Bluschke,
P. Moen,
N. Heinsdorf,
E. Zavatti,
G. Bellomia,
S. Giuli,
S. K. Y. Dufresne,
C. T. Suen,
V. Zimmermann,
C. Au-Yeung,
S. Zhdanovich,
J. I. Dadap,
M. Zonno,
S. Gorovikov,
H. Lee,
C-T. Kuo,
J-S. Lee,
D. Song,
S. Ishida,
H. Eisaki,
B. Keimer,
M. Michiardi,
I. S. Elfimov,
G. Levy
, et al. (3 additional authors not shown)
Abstract:
Trilayer cuprates hold the record for the highest superconducting critical temperatures ($T_{\text{c}}$), yet the underlying mechanism remains elusive. Using time- and angle-resolved photoemission spectroscopy (tr-ARPES), we uncover a striking interplay between charge order, superconducting gap magnitude, and quasiparticle coherence in Bi$_2$Sr$_2$Ca$_2$Cu$_3$O$_{10+δ}$ (Bi2223). This constitutes…
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Trilayer cuprates hold the record for the highest superconducting critical temperatures ($T_{\text{c}}$), yet the underlying mechanism remains elusive. Using time- and angle-resolved photoemission spectroscopy (tr-ARPES), we uncover a striking interplay between charge order, superconducting gap magnitude, and quasiparticle coherence in Bi$_2$Sr$_2$Ca$_2$Cu$_3$O$_{10+δ}$ (Bi2223). This constitutes ARPES-based evidence of charge order on the inner CuO$_2$ plane, as confirmed via resonant x-ray scattering (RXS); in addition, the same inner plane hosts a superconducting gap significantly larger than that of the overdoped outer planes, firmly establishing it as underdoped. Unexpectedly, despite its underdoped nature, the inner plane also exhibits an exceptional degree of quasiparticle coherence; suppressing charge-order fluctuations further enhances this, making it comparable to that of the overdoped outer planes at elevated electronic temperatures. These findings, supported by complementary three-layer single-band Hubbard calculations, reveal a unique interlayer mechanism in which both pairing strength and phase coherence are optimized when interfacing planes with distinct hole concentrations, providing new microscopic insight into the record $T_{\text{c}}$ of Bi2223.
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Submitted 2 June, 2025;
originally announced June 2025.
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Selective electron-phonon coupling strength from nonequilibrium optical spectroscopy: The case of MgB$_2$
Authors:
S. Mor,
F. Boschini,
E. Razzoli,
M. Zonno,
M. Michiardi,
G. Levy,
N. D. Zhigadlo,
P. C. Canfield,
G. Cerullo,
A. Damascelli,
C. Giannetti,
S. Dal Conte
Abstract:
The coupling between quasiparticles and bosonic excitations rules the energy transfer pathways in condensed matter systems. The possibility of inferring the strength of specific coupling channels from their characteristic time scales measured in nonequilibrium experiments is still an open question. Here, we investigate MgB$_2$, in which conventional superconductivity at temperatures as high as 39…
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The coupling between quasiparticles and bosonic excitations rules the energy transfer pathways in condensed matter systems. The possibility of inferring the strength of specific coupling channels from their characteristic time scales measured in nonequilibrium experiments is still an open question. Here, we investigate MgB$_2$, in which conventional superconductivity at temperatures as high as 39 K is mediated by the strong coupling between the conduction electrons and the E$_{2g}$ phonon mode. By means of broadband time-resolved optical spectroscopy, we show that this selective electron-phonon coupling dictates the nonequilibrium optical response of MgB$_2$ at early times (<100 fs) after photoexcitation. Furthermore, based on an effective temperature model analysis, we estimate its contribution to the total electron-boson coupling function extracted from complementary equilibrium spectroscopy approaches, namely optical reflectivity and ARPES. The coupling strength with the E$_{2g}$ phonon modes is thus estimated to be $λ$ ~ 0.56, which is approximately half of the total coupling constant, in agreement with ab-initio calculations from the literature. As a benchmark, broadband time-resolved optical spectroscopy is performed also on the isostructural and non-superconducting compound AlB$_2$, showing that the nonequilibrium optical response relaxes on a slower timescale due to the lack of strongly-coupled phonon modes. Our findings demonstrate the possibility to resolve and quantify selective electron-phonon coupling from nonequilibrium optical spectroscopy.
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Submitted 4 March, 2025;
originally announced March 2025.
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Universal electronic structure of layered nickelates via oxygen-centered planar orbitals
Authors:
Christine C. Au-Yeung,
X. Chen,
S. Smit,
M. Bluschke,
V. Zimmermann,
M. Michiardi,
P. Moen,
J. Kraan,
C. S. B. Pang,
C. T. Suen,
S. Zhdanovich,
M. Zonno,
S. Gorovikov,
Y. Liu,
G. Levy,
I. S. Elfimov,
M. Berciu,
G. A. Sawatzky,
J. F. Mitchell,
A. Damascelli
Abstract:
Superconductivity has recently been demonstrated in La$_3$Ni$_2$O$_7$ up to 91K under moderate pressure in bulk crystals, and up to 48K at ambient pressure in thin films grown under compressive strain. Key questions remain open regarding the crystal structure and low-energy electronic states that support superconductivity in these compounds. Here we take advantage of the natural polymorphism betwe…
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Superconductivity has recently been demonstrated in La$_3$Ni$_2$O$_7$ up to 91K under moderate pressure in bulk crystals, and up to 48K at ambient pressure in thin films grown under compressive strain. Key questions remain open regarding the crystal structure and low-energy electronic states that support superconductivity in these compounds. Here we take advantage of the natural polymorphism between bilayer (2222) or alternating monolayer-trilayer (1313) stacking sequences that arises in bulk La$_3$Ni$_2$O$_7$ crystals to identify universal features in this family of materials. Employing angle-resolved photoemission spectroscopy (ARPES) we observe the fingerprint of a spin-density wave (SDW) instability, strong and coherent enough to modify the electronic structure. We demonstrate that this feature is a `translated' $β$ Fermi surface associated with a scattering vector $Q_{tβ}$ which matches the $Q_{SDW}$ detected by neutron and x-ray scattering experiments. This observation provides an important link between surface and bulk probes, and demonstrates a universal connection between magnetism and fermiology in La$_3$Ni$_2$O$_7$ as well as La$_4$Ni$_3$O$_{10}$. We simulate the spectral weight distribution observed in our ARPES dichroism experiments and establish that the low-energy electronic phenomenology is dominated by oxygen-centered planar orbitals, which -- upon moving along the Fermi surface away from the Ni-O-Ni bond directions -- evolve from the $d_{3x^2-r^2}$ and $d_{3y^2-r^2}$ symmetry characteristic of 3-spin polarons to the familiar $d_{x^2-y^2}$ Zhang-Rice singlets that support high-temperature superconductivity in cuprates. Despite the multiorbital nature of the nickelates, our work establishes an empirical correspondence between the low-energy electronic structure of cuprates and nickelates, thus suggesting a common origin for their unconventional superconductivity.
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Submitted 27 February, 2025;
originally announced February 2025.
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Flat Band Generation through Interlayer Geometric Frustration in Intercalated Transition Metal Dichalcogenides
Authors:
Yawen Peng,
Ren He,
Peng Li,
Sergey Zhdanovich,
Matteo Michiardi,
Sergey Gorovikov,
Marta Zonno,
Andrea Damascelli,
Guo-Xing Miao
Abstract:
Electronic flat bands can lead to rich many-body quantum phases by quenching the electron's kinetic energy and enhancing many-body correlation. The reduced bandwidth can be realized by either destructive quantum interference in frustrated lattices, or by generating heavy band folding with avoided band crossing in Moire superlattices. Here we propose a general approach to introduce flat bands into…
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Electronic flat bands can lead to rich many-body quantum phases by quenching the electron's kinetic energy and enhancing many-body correlation. The reduced bandwidth can be realized by either destructive quantum interference in frustrated lattices, or by generating heavy band folding with avoided band crossing in Moire superlattices. Here we propose a general approach to introduce flat bands into widely studied transition metal dichalcogenide (TMD) materials by dilute intercalation. A flat band with vanishing dispersion is observed by angle-resolved photoemission spectroscopy (ARPES) over the entire momentum space in intercalated Mn1/4TaS2. Polarization dependent ARPES measurements combined with symmetry analysis reveals the orbital characters of the flat band. Supercell tight-binding simulations suggest that such flat bands arising from destructive interference between Mn and Ta on S through hopping pathways, are ubiquitous in a range of TMD families as well as for different intercalation configurations. Our findings establish a new material platform to manipulate flat band structures and explore their corresponding emergent correlated properties.
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Submitted 28 January, 2025; v1 submitted 21 August, 2024;
originally announced August 2024.
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Electronically-driven switching of topology in LaSbTe
Authors:
J. Bannies,
M. Michiardi,
H. -H. Kung,
S. Godin,
J. W. Simonson,
M. Oudah,
M. Zonno,
S. Gorovikov,
S. Zhdanovich,
I. S. Elfimov,
A. Damascelli,
M. C. Aronson
Abstract:
In the past two decades, various classes of topological materials have been discovered, spanning topological insulators, semimetals, and metals. While the observation and understanding of the topology of a material has been a primary focus so far, the precise and easy control of topology in a single material remains largely unexplored. Here, we demonstrate full experimental control over the topolo…
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In the past two decades, various classes of topological materials have been discovered, spanning topological insulators, semimetals, and metals. While the observation and understanding of the topology of a material has been a primary focus so far, the precise and easy control of topology in a single material remains largely unexplored. Here, we demonstrate full experimental control over the topological Dirac nodal loop in the square-net material LaSb$_\mathrm{x}$Te$_\mathrm{2-x}$ by chemical substitution and electron doping. Using angle-resolved photoemission spectroscopy (ARPES), we show that changing the antimony concentration x from 0.9 to 1.0 in the bulk opens a gap as large as 400 meV in the nodal loop. Our symmetry analysis based on single-crystal X-ray diffraction and a minimal tight binding model establishes that the breaking of \textit{n} glide symmetry in the square-net layer is responsible for the opening of the gap. Remarkably, we can also realize this topological phase transition \textit{in situ} on the surface of LaSb$_\mathrm{x}$Te$_\mathrm{2-x}$ by chemical gating using potassium deposition, which enables the reversible switching of the topology from gapped to gapless nodal loop. The underlying control parameter for the structural and topological transition in the bulk and on the surface is the electron concentration. It opens a pathway towards applications in devices based on switching topology by electrostatic gating.
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Submitted 11 July, 2024;
originally announced July 2024.
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Two-stage growth for highly ordered epitaxial C$_{60}$ films on Au(111)
Authors:
Alexandra B. Tully,
Rysa Greenwood,
MengXing Na,
Vanessa King,
Erik Mårsell,
Yuran Niu,
Evangelos Golias,
Arthur K. Mills,
Giorgio Levy de Castro,
Matteo Michiardi,
Darius Menezes,
Jiabin Yu,
Sergey Zhdanovich,
Andrea Damascelli,
David J. Jones,
Sarah A. Burke
Abstract:
As an organic semiconductor and a prototypical acceptor molecule in organic photovoltaics, C$_{60}$ has broad relevance to the world of organic thin film electronics. Although highly uniform C$_{60}$ thin films are necessary to conduct spectroscopic analysis of the electronic structure of these C$_{60}$-based materials, reported C$_{60}$ films show a relatively low degree of order beyond a monolay…
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As an organic semiconductor and a prototypical acceptor molecule in organic photovoltaics, C$_{60}$ has broad relevance to the world of organic thin film electronics. Although highly uniform C$_{60}$ thin films are necessary to conduct spectroscopic analysis of the electronic structure of these C$_{60}$-based materials, reported C$_{60}$ films show a relatively low degree of order beyond a monolayer. Here, we develop a generalizable two-stage growth technique that consistently produces single-domain C$_{60}$ films of controllable thicknesses, using Au(111) as an epitaxially well-matched substrate. We characterize the films using low-energy electron diffraction, low-energy electron microscopy, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy (ARPES). We report highly oriented epitaxial film growth of C$_{60}$/Au(111) from 1 monolayer (ML) up to 20 ML films. The high-quality of the C$_{60}$ thin films enables the direct observation of the electronic dispersion of the HOMO and HOMO-1 bands via ARPES without need for small spot sizes. Our results indicate a path for the growth of organic films on metallic substrates with long-range ordering.
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Submitted 15 April, 2024;
originally announced April 2024.
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Kink in cuprates: the role of the low-energy density of states
Authors:
E. Razzoli,
F. Boschini,
M. Zonno,
M. X. Na,
M. Michiardi,
M. Schneider,
E. H. da Silva Neto,
S. Gorovikov,
R. D. Zhong,
J. Schneeloch,
G. D. Gu,
S. Zhdanovich,
A. K. Mills,
G. Levy,
D. J. Jones,
C. Giannetti,
A. Damascelli
Abstract:
The 40-70 meV band-structure renormalization (so-called kink) in high-temperature cuprate superconductors - which has been mainly interpreted in terms of electron-boson coupling - is observed to be strongly suppressed both above the superconducting transition temperature and under optical excitation. We employ equilibrium and time- and angle-resolved photoemission spectroscopy, in combination with…
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The 40-70 meV band-structure renormalization (so-called kink) in high-temperature cuprate superconductors - which has been mainly interpreted in terms of electron-boson coupling - is observed to be strongly suppressed both above the superconducting transition temperature and under optical excitation. We employ equilibrium and time- and angle-resolved photoemission spectroscopy, in combination with Migdal-Eliashberg simulations, to investigate the suppression of the near-nodal kink in Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$. We show that the $\sim$30$\%$ decrease of the kink strength across the superconducting-to-normal-state phase transition can be entirely accounted for by the filling of the superconducting gap, without additional consideration of temperature-dependent electron-boson coupling. Our findings demonstrate that consideration of changes in the density of states is essential to quantitatively account for the band structure renormalization effects in cuprates.
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Submitted 8 December, 2023;
originally announced December 2023.
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Mixed-valence state in the dilute-impurity regime of La-substituted SmB$_6$
Authors:
Marta Zonno,
Matteo Michiardi,
Fabio Boschini,
Giorgio Levy,
Klara Volkaert,
Davide Curcio,
Marco Bianchi,
Priscila F. S. Rosa,
Zachary Fisk,
Philip Hofmann,
Ilya S. Elfimov,
Robert J. Green,
George A. Sawatzky,
Andrea Damascelli
Abstract:
Homogeneous mixed-valence (MV) behaviour is one of the most intriguing phenomena of $f$-electron systems. Despite extensive efforts, a fundamental aspect which remains unsettled is the determination of the limiting cases for which MV emerges. Here we address this question for SmB$_6$, a prototypical MV system characterized by two nearly-degenerate Sm$^{2+}$ and Sm$^{3+}$ configurations. By combini…
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Homogeneous mixed-valence (MV) behaviour is one of the most intriguing phenomena of $f$-electron systems. Despite extensive efforts, a fundamental aspect which remains unsettled is the determination of the limiting cases for which MV emerges. Here we address this question for SmB$_6$, a prototypical MV system characterized by two nearly-degenerate Sm$^{2+}$ and Sm$^{3+}$ configurations. By combining angle resolved photoemission spectroscopy (ARPES) and x-ray absorption spectroscopy (XAS), we track the evolution of the mean Sm valence, $v_{Sm}$, in the Sm$_x$La$_{1-x}$B$_6$ series. Upon substitution of Sm ions with trivalent La, we observe a linear decrease of valence fluctuations to an almost complete suppression at $x$$\,$=$\,$0.2, with $v_{Sm}$$\,$$\sim$$\,$2; surprisingly, by further reducing $x$, a re-entrant increase of $v_{Sm}$ develops, approaching the value of $v_{imp}$$\,$$\sim$$\,$2.35 in the dilute-impurity limit. Such observation departs from a monotonic evolution of $v_{Sm}$ across the whole series, as well as from the expectation of its convergence to an integer value for $x$$\,$$\rightarrow$$\,$0. Our ARPES and XAS results, complemented by a phenomenological model, demonstrate an unconventional evolution of the MV character in the Sm$_x$La$_{1-x}$B$_6$ series, paving the way to further theoretical and experimental considerations on the concept of MV itself, and its influence on the macroscopic properties of rare-earth compounds in the dilute-to-intermediate impurity regime.
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Submitted 3 September, 2024; v1 submitted 11 September, 2023;
originally announced September 2023.
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A versatile laser-based apparatus for time-resolved ARPES with micro-scale spatial resolution
Authors:
Sydney K. Y. Dufresne,
Sergey Zhdanovich,
Matteo Michiardi,
Bradley G. Guislain,
Marta Zonno,
Sean Kung,
Giorgio Levy,
Arthur K. Mills,
Fabio Boschini,
David J. Jones,
Andrea Damascelli
Abstract:
We present the development of a versatile apparatus for a 6.2 eV laser-based time and angle-resolved photoemission spectroscopy with micrometer spatial resolution (time-resolved $μ$-ARPES). With a combination of tunable spatial resolution down to $\sim$11 $μ$m, high energy resolution ($\sim$11 meV), near-transform-limited temporal resolution ($\sim$280 fs), and tunable 1.55 eV pump fluence up to…
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We present the development of a versatile apparatus for a 6.2 eV laser-based time and angle-resolved photoemission spectroscopy with micrometer spatial resolution (time-resolved $μ$-ARPES). With a combination of tunable spatial resolution down to $\sim$11 $μ$m, high energy resolution ($\sim$11 meV), near-transform-limited temporal resolution ($\sim$280 fs), and tunable 1.55 eV pump fluence up to $\sim$3 mJ/cm$^2$, this time-resolved $μ$-ARPES system enables the measurement of ultrafast electron dynamics in exfoliated and inhomogeneous materials. We demonstrate the performance of our system by correlating the spectral broadening of the topological surface state of Bi$_2$Se$_3$ with the spatial dimension of the probe pulse, as well as resolving the spatial inhomogeneity contribution to the observed spectral broadening. Finally, after in-situ exfoliation, we performed time-resolved $μ$-ARPES on a $\sim$30 $μ$m few-layer-thick flake of transition metal dichalcogenide WTe$_2$, thus demonstrating the ability to access ultrafast electron dynamics with momentum resolution on micro-exfoliated and twisted materials.
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Submitted 8 September, 2023;
originally announced September 2023.
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Comparative Electronic Structures of the Chiral Helimagnets Cr1/3NbS2 and Cr1/3TaS2
Authors:
Lilia S. Xie,
Oscar Gonzalez,
Kejun Li,
Matteo Michiardi,
Sergey Gorovikov,
Sae Hee Ryu,
Shannon S. Fender,
Marta Zonno,
Na Hyun Jo,
Sergey Zhdanovich,
Chris Jozwiak,
Aaron Bostwick,
Samra Husremovic,
Matthew P. Erodici,
Cameron Mollazadeh,
Andrea Damascelli,
Eli Rotenberg,
Yuan Ping,
D. Kwabena Bediako
Abstract:
Magnetic materials with noncollinear spin textures are promising for spintronic applications. To realize practical devices, control over the length and energy scales of such spin textures is imperative. The chiral helimagnets Cr1/3NbS2 and Cr1/3TaS2 exhibit analogous magnetic phase diagrams with different real-space periodicities and field dependence, positioning them as model systems for studying…
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Magnetic materials with noncollinear spin textures are promising for spintronic applications. To realize practical devices, control over the length and energy scales of such spin textures is imperative. The chiral helimagnets Cr1/3NbS2 and Cr1/3TaS2 exhibit analogous magnetic phase diagrams with different real-space periodicities and field dependence, positioning them as model systems for studying the relative strengths of the microscopic mechanisms giving rise to exotic spin textures. Here, we carry out a comparative study of the electronic structures of Cr1/3NbS2 and Cr1/3TaS2 using angle-resolved photoemission spectroscopy and density functional theory. We show that bands in Cr1/3TaS2 are more dispersive than their counterparts in Cr1/3NbS2 and connect this result to bonding and orbital overlap in these materials. We also unambiguously distinguish exchange splitting from surface termination effects by studying the dependence of their photoemission spectra on polarization, temperature, and beam size. We find strong evidence that hybridization between intercalant and host lattice electronic states mediates the magnetic exchange interactions in these materials, suggesting that band engineering is a route toward tuning their spin textures. Overall, these results underscore how the modular nature of intercalated transition metal dichalcogenides translates variation in composition and electronic structure to complex magnetism.
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Submitted 22 May, 2023; v1 submitted 15 May, 2023;
originally announced May 2023.
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In-situ exfoliation method of large-area 2D materials
Authors:
Antonija Grubišić-Čabo,
Matteo Michiardi,
Charlotte E. Sanders,
Marco Bianchi,
Davide Curcio,
Dibya Phuyal,
Magnus H. Berntsen,
Qinda Guo,
Maciej Dendzik
Abstract:
The success in studying 2D materials inherently relies on producing samples of large area, and high quality enough for the experimental conditions. Because their 2D nature surface sensitive techniques such as photoemission spectroscopy , tunneling microscopy and electron diffraction, that work in ultra high vacuum (UHV) environment are prime techniques that have been employed with great success in…
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The success in studying 2D materials inherently relies on producing samples of large area, and high quality enough for the experimental conditions. Because their 2D nature surface sensitive techniques such as photoemission spectroscopy , tunneling microscopy and electron diffraction, that work in ultra high vacuum (UHV) environment are prime techniques that have been employed with great success in unveiling new properties of 2D materials but it requires samples to be free of adsorbates. The technique that most easily and readily yields 2dmaterials of highest quality is indubitably mechanical exfoliation from bulk grown samples, however as this technique is traditionally done in dedicated environment, the transfer of these samples into UHV setups requires some form of surface cleaning that tempers with the sample quality. In this article, we report on a simple and general method of \textit{in-situ} mechanical exfoliation directly in UHV that yields large-area single-layered films. By employing standard UHV cleaning techniques and by purpusedly exploiting the chemical affinity between the substrate and the sample we could yield large area exfoliation of transition metal dichalcogenides. Multiple transition metal dichalcogenides, both metallic and semiconducting, are exfoliated \textit{in-situ} onto Au and Ag, and Ge. Exfoliated flakes are found to be sub-milimeter size with excellent crystallinity and purity, as evidenced by angle-resolved photoemission spectroscopy, atomic force microscopy and low-energy electron diffraction. In addition, we demonstrate exfoliation of air-sensitive 2D materials and possibility of controlling the substrate-2D material twist angle.
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Submitted 29 September, 2022;
originally announced September 2022.
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Spectral Evidence for Unidirectional Charge Density Wave in Detwinned BaNi$_2$As$_2$
Authors:
Yucheng Guo,
Mason Klemm,
Ji Seop Oh,
Yaofeng Xie,
Bing-Hua Lei,
Sergey Gorovikov,
Tor Pedersen,
Matteo Michiardi,
Sergey Zhdanovich,
Andrea Damascelli,
Jonathan Denlinger,
Makoto Hashimoto,
Donghui Lu,
Sung-Kwan Mo,
Rob G. Moore,
Robert J. Birgeneau,
David J. Singh,
Pengcheng Dai,
Ming Yi
Abstract:
The emergence of unconventional superconductivity in proximity to intertwined electronic orders is especially relevant in the case of iron-based superconductors. Such order consists of an electronic nematic order and a spin density wave in these systems. BaNi$_2$As$_2$, like its well-known iron-based analog BaFe$_2$As$_2$, also hosts a symmetry-breaking structural transition that is coupled to a u…
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The emergence of unconventional superconductivity in proximity to intertwined electronic orders is especially relevant in the case of iron-based superconductors. Such order consists of an electronic nematic order and a spin density wave in these systems. BaNi$_2$As$_2$, like its well-known iron-based analog BaFe$_2$As$_2$, also hosts a symmetry-breaking structural transition that is coupled to a unidirectional charge density wave (CDW), providing a novel platform to study intertwined orders. Here, through a systematic angle-resolved photoemission spectroscopy study combined with a detwinning $B_1g$ uniaxial strain, we identify distinct spectral evidence of band evolution due to the structural transition as well as CDW-induced band folding. In contrast to the nematicity and spin density wave in BaFe$_2$As$_2$, the structural and CDW order parameters in BaNi$_2$As$_2$ are observed to be strongly coupled and do not separate in the presence of uniaxial strain. Our measurements point to a likely lattice origin of the CDW in BaNi$_2$As$_2$.
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Submitted 28 May, 2022;
originally announced May 2022.
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Constraints on the two-dimensional pseudo-spin 1/2 Mott insulator description of Sr$_2$IrO$_4$
Authors:
Berend Zwartsenberg,
Ryan P. Day,
Elia Razzoli,
Matteo Michiardi,
Mengxing Na,
Guoren Zhang,
Jonathan D. Denlinger,
Ivana Vobornik,
Chiara Bigi,
Bumjoon Kim,
Ilya S. Elfimov,
Eva Pavarini,
Andrea Damascelli
Abstract:
Sr$_{2}$IrO$_{4}$ has often been described via a simple, one-band pseudo-spin 1/2 model, subject to electron-electron interactions, on a square lattice, fostering analogies with cuprate superconductors, believed to be well described by a similar model. In this work we argue - based on a detailed study of the low-energy electronic structure by circularly polarized spin and angle-resolved photoemiss…
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Sr$_{2}$IrO$_{4}$ has often been described via a simple, one-band pseudo-spin 1/2 model, subject to electron-electron interactions, on a square lattice, fostering analogies with cuprate superconductors, believed to be well described by a similar model. In this work we argue - based on a detailed study of the low-energy electronic structure by circularly polarized spin and angle-resolved photoemission spectroscopy combined with dynamical mean-field theory calculations - that a pseudo-spin 1/2 model fails to capture the full complexity of the system. We show instead that a realistic multi-band Hubbard Hamiltonian, accounting for the full correlated $t_{2g}$ manifold, provides a detailed description of the interplay between spin-orbital entanglement and electron-electron interactions, and yields quantitative agreement with experiments. Our analysis establishes that the $j_{3/2}$ states make up a substantial percentage of the low energy spectral weight, i.e. approximately 74% as determined from the integration of the $j$-resolved spectral function in the $0$ to $-1.64$ eV energy range. The results in our work are not only of relevance to iridium based materials, but more generally to the study of multi-orbital materials with closely spaced energy scales.
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Submitted 25 May, 2022;
originally announced May 2022.
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Triggering a global density wave instability in graphene via local symmetry-breaking
Authors:
Amy C. Qu,
Pascal Nigge,
Stefan Link,
Giorgio Levy,
Matteo Michiardi,
Parsa L. Spandar,
Tiffany Matthé,
Michael Schneider,
Sergey Zhdanovich,
Ulrich Starke,
Christopher Gutiérrez,
Andrea Damascelli
Abstract:
Two-dimensional quantum materials offer a robust platform for investigating the emergence of symmetry-broken ordered phases owing to the high tuneability of their electronic properties. For instance, the ability to create new electronic band structures in graphene through moiré superlattices from stacked and twisted structures has led to the discovery of several correlated and topological phases.…
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Two-dimensional quantum materials offer a robust platform for investigating the emergence of symmetry-broken ordered phases owing to the high tuneability of their electronic properties. For instance, the ability to create new electronic band structures in graphene through moiré superlattices from stacked and twisted structures has led to the discovery of several correlated and topological phases. Here we report an alternative method to induce an incipient symmetry-broken phase in graphene at the millimetre scale. We show that an extremely dilute concentration ($<\!0.3\% $) of surface adatoms can self-assemble and trigger the collapse of the graphene atomic lattice into a distinct Kekulé bond density wave phase, whereby the carbon C-C bond symmetry is broken globally. Using complementary momentum-resolved techniques such as angle-resolved photoemission spectroscopy (ARPES) and low-energy electron diffraction (LEED), we directly probe the presence of this density wave phase and confirm the opening of an energy gap at the Dirac point. We further show that this Kekulé density wave phase occurs for various Fermi surface sizes and shapes, suggesting that this lattice instability is driven by strong electron-lattice interactions. Our results demonstrate that dilute concentrations of self-assembled adsorbed atoms offer an attractive alternative route towards designing novel quantum phases in two-dimensional materials.
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Submitted 23 April, 2022;
originally announced April 2022.
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Correlation-Driven Electronic Reconstruction in FeTe$_{1-x}$Se$_x$
Authors:
Jianwei Huang,
Rong Yu,
Zhijun Xu,
Jian-Xin Zhu,
Ji Seop Oh,
Qianni Jiang,
Meng Wang,
Han Wu,
Tong Chen,
Jonathan D. Denlinger,
Sung-Kwan Mo,
Makoto Hashimoto,
Matteo Michiardi,
Tor M. Pedersen,
Sergey Gorovikov,
Sergey Zhdanovich,
Andrea Damascelli,
Genda Gu,
Pengcheng Dai,
Jiun-Haw Chu,
Donghui Lu,
Qimiao Si,
Robert J. Birgeneau,
Ming Yi
Abstract:
Electronic correlation is of fundamental importance to high temperature superconductivity. While the low energy electronic states in cuprates are dominantly affected by correlation effects across the phase diagram, observation of correlation-driven changes in fermiology amongst the iron-based superconductors remains rare. Here we present experimental evidence for a correlation-driven reconstructio…
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Electronic correlation is of fundamental importance to high temperature superconductivity. While the low energy electronic states in cuprates are dominantly affected by correlation effects across the phase diagram, observation of correlation-driven changes in fermiology amongst the iron-based superconductors remains rare. Here we present experimental evidence for a correlation-driven reconstruction of the Fermi surface tuned independently by two orthogonal axes of temperature and Se/Te ratio in the iron chalcogenide family FeTe$_{1-x}$Se$_x$. We demonstrate that this reconstruction is driven by the de-hybridization of a strongly renormalized $d_{xy}$ orbital with the remaining itinerant iron 3$d$ orbitals in the emergence of an orbital-selective Mott phase. Our observations are further supported by our theoretical calculations to be salient spectroscopic signatures of such a non-thermal evolution from a strongly correlated metallic phase into an orbital-selective Mott phase in $d_{xy}$ as Se concentration is reduced.
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Submitted 7 January, 2022;
originally announced January 2022.
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The Three-Dimensional Electronic Structure of LiFeAs: Strong-coupling Superconductivity and Topology in the Iron Pnictides
Authors:
Ryan P. Day,
MengXing Na,
Manuel Zingl,
Berend Zwartsenberg,
Matteo Michiardi,
Giorgio Levy,
Michael Schneider,
Doug Wong,
Pinder Dosanjh,
Tor M. Pedersen,
Sergey Gorovikov,
Shun Chi,
Ruixing Liang,
Walter N. Hardy,
Douglas A. Bonn,
Sergey Zhdanovich,
Ilya S. Elfimov,
Andrea Damascelli
Abstract:
Amongst the iron-based superconductors, LiFeAs is unrivalled in the simplicity of its crystal structure and phase diagram. However, our understanding of this canonical compound suffers from conflict between mutually incompatible descriptions of the material's electronic structure, as derived from contradictory interpretations of the photoemission record. Here, we explore the challenge of interpret…
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Amongst the iron-based superconductors, LiFeAs is unrivalled in the simplicity of its crystal structure and phase diagram. However, our understanding of this canonical compound suffers from conflict between mutually incompatible descriptions of the material's electronic structure, as derived from contradictory interpretations of the photoemission record. Here, we explore the challenge of interpretation in such experiments. By combining comprehensive photon energy- and polarization- dependent angle-resolved photoemission spectroscopy (ARPES) measurements with numerical simulations, we establish the providence of several contradictions in the present understanding of this and related materials. We identify a confluence of surface-related issues which have precluded unambiguous identification of both the number and dimensionality of the Fermi surface sheets. Ultimately, we arrive at a scenario which supports indications of topologically non-trivial states, while also being incompatible with superconductivity as a spin-fluctuation driven Fermi surface instability.
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Submitted 27 September, 2021;
originally announced September 2021.
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Optical manipulation of Rashba-split 2-Dimensional Electron Gas
Authors:
M. Michiardi,
F. Boschini,
H. -H. Kung,
M. X. Na,
S. K. Y. Dufresne,
A. Currie,
G. Levy,
S. Zhdanovich,
A. K. Mills,
D. J. Jones,
J. L. Mi,
B. B. Iversen,
Ph. Hofmann,
A. Damascelli
Abstract:
In spintronic devices, the two main approaches to actively control the electrons' spin degree of freedom involve either static magnetic or electric fields. An alternative avenue relies on the application of optical fields to generate spin currents, which promises to bolster spin-device performance allowing for significantly faster and more efficient spin logic. To date, research has mainly focused…
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In spintronic devices, the two main approaches to actively control the electrons' spin degree of freedom involve either static magnetic or electric fields. An alternative avenue relies on the application of optical fields to generate spin currents, which promises to bolster spin-device performance allowing for significantly faster and more efficient spin logic. To date, research has mainly focused on the optical injection of spin currents through the photogalvanic effect, and little is known about the direct optical control of the intrinsic spin splitting. Here, to explore the all-optical manipulation of a material's spin properties, we consider the Rashba effect at a semiconductor interface. The Rashba effect has long been a staple in the field of spintronics owing to its superior tunability, which allows the observation of fully spin-dependent phenomena, such as the spin-Hall effect, spin-charge conversion, and spin-torque in semiconductor devices. In this work, by means of time and angle-resolved photoemission spectroscopy (TR-ARPES), we demonstrate that an ultrafast optical excitation can be used to manipulate the Rashba-induced spin splitting of a two-dimensional electron gas (2DEG) engineered at the surface of the topological insulator Bi$_{2}$Se$_{3}$. We establish that light-induced photovoltage and charge carrier redistribution -- which in concert modulate the spin-orbit coupling strength on a sub-picosecond timescale -- can offer an unprecedented platform for achieving all optically-driven THz spin logic devices.
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Submitted 2 June, 2022; v1 submitted 19 May, 2021;
originally announced May 2021.
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Extremely large magnetoresistance from electron-hole compensation in the nodal loop semimetal ZrP$_2$
Authors:
J. Bannies,
E. Razzoli,
M. Michiardi,
H. -H. Kung,
I. S. Elfimov,
M. Yao,
A. Fedorov,
J. Fink,
C. Jozwiak,
A. Bostwick,
E. Rotenberg,
A. Damascelli,
C. Felser
Abstract:
Several early transition metal dipnictides have been found to host topological semimetal states and exhibit large magnetoresistance. In this study, we use angle-resolved photoemission spectroscopy (ARPES) and magneto-transport to study the electronic properties of a new transition metal dipnictide ZrP$_2$. We find that ZrP$_2$ exhibits an extremely large and unsaturated magnetoresistance of up to…
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Several early transition metal dipnictides have been found to host topological semimetal states and exhibit large magnetoresistance. In this study, we use angle-resolved photoemission spectroscopy (ARPES) and magneto-transport to study the electronic properties of a new transition metal dipnictide ZrP$_2$. We find that ZrP$_2$ exhibits an extremely large and unsaturated magnetoresistance of up to 40,000 % at 2 K, which originates from an almost perfect electron-hole compensation. Our band structure calculations further show that ZrP$_2$ hosts a topological nodal loop in proximity to the Fermi level. Based on the ARPES measurements, we confirm the results of our calculations and determine the surface band structure. Our study establishes ZrP$_2$ as a new platform to investigate near-perfect electron-hole compensation and its interplay with topological band structures.
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Submitted 24 March, 2021;
originally announced March 2021.
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Dynamic electron correlations with charge order wavelength along all directions in the copper oxide plane
Authors:
F. Boschini,
M. Minola,
R. Sutarto,
E. Schierle,
M. Bluschke,
S. Das,
Y. Yang,
M. Michiardi,
Y. C. Shao,
X. Feng,
S. Ono,
R. D. Zhong,
J. Schneeloch,
G. D. Guo,
E. Weschke,
F. He,
Y. D. Chuang,
B. Keimer,
A. Damascelli,
A. Frano,
E. H. da Silva Neto
Abstract:
In strongly correlated systems the strength of Coulomb interactions between electrons, relative to their kinetic energy, plays a central role in determining their emergent quantum mechanical phases. We perform resonant x-ray scattering on Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$, a prototypical cuprate superconductor, to probe electronic correlations within the CuO$_2$ plane. We discover a dynamic quasi-circ…
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In strongly correlated systems the strength of Coulomb interactions between electrons, relative to their kinetic energy, plays a central role in determining their emergent quantum mechanical phases. We perform resonant x-ray scattering on Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$, a prototypical cuprate superconductor, to probe electronic correlations within the CuO$_2$ plane. We discover a dynamic quasi-circular pattern in the $x$-$y$ scattering plane with a radius that matches the wave vector magnitude of the well-known static charge order. Along with doping- and temperature-dependent measurements, our experiments reveal a picture of charge order competing with superconductivity where short-range domains along $x$ and $y$ can dynamically rotate into any other in-plane direction. This quasi-circular spectrum, a hallmark of Brazovskii-type fluctuations, has immediate consequences to our understanding of rotational and translational symmetry breaking in the cuprates. We discuss how the combination of short- and long-range Coulomb interactions results in an effective non-monotonic potential that may determine the quasi-circular pattern.
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Submitted 29 January, 2021;
originally announced February 2021.
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Ubiquitous suppression of the nodal coherent spectral weight in Bi-based cuprates
Authors:
M. Zonno,
F. Boschini,
E. Razzoli,
M. Michiardi,
M. X. Na,
S. Dufresne,
T. M. Pedersen,
S. Gorovikov,
S. Gonzalez,
G. Di Santo,
L. Petaccia,
M. Schneider,
D. Wong,
P. Dosanjh,
Y. Yoshida,
H. Eisaki,
R. D. Zhong,
J. Schneeloch,
G. D. Gu,
A. K. Mills,
S. Zhdanovich,
G. Levy,
D. J. Jones,
A. Damascelli
Abstract:
High-temperature superconducting cuprates exhibit an intriguing phenomenology for the low-energy elementary excitations. In particular, an unconventional temperature dependence of the coherent spectral weight (CSW) has been observed in the superconducting phase by angle-resolved photoemission spectroscopy (ARPES), both at the antinode where the d-wave paring gap is maximum, as well as along the ga…
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High-temperature superconducting cuprates exhibit an intriguing phenomenology for the low-energy elementary excitations. In particular, an unconventional temperature dependence of the coherent spectral weight (CSW) has been observed in the superconducting phase by angle-resolved photoemission spectroscopy (ARPES), both at the antinode where the d-wave paring gap is maximum, as well as along the gapless nodal direction. Here, we combine equilibrium and time-resolved ARPES to track the temperature dependent meltdown of the nodal CSW in Bi-based cuprates with unprecedented sensitivity. We find the nodal suppression of CSW upon increasing temperature to be ubiquitous across single- and double-layer Bi cuprates, and uncorrelated to superconducting and pseudogap onset temperatures. We quantitatively model both the lineshape of the nodal spectral features and the anomalous suppression of CSW within the Fermi-Liquid framework, establishing the key role played by the normal state electrodynamics in the description of nodal quasiparticles in superconducting cuprates.
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Submitted 10 September, 2020;
originally announced September 2020.
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Establishing non-thermal regimes in pump-probe electron-relaxation dynamics
Authors:
MengXing Na,
Fabio Boschini,
Arthur K. Mills,
Matteo Michiardi,
Ryan P. Day,
Berend Zwartsenberg,
Giorgio Levy,
Sergey Zhdanovich,
Alexander F. Kemper,
David J. Jones,
Andrea Damascelli
Abstract:
Time- and angle-resolved photoemission spectroscopy (TR-ARPES) accesses the electronic structure of solids under optical excitation, and is a powerful technique for studying the coupling between electrons and collective modes. One approach to infer electron-boson coupling is through the relaxation dynamics of optically-excited electrons, and the characteristic timescales of energy redistribution.…
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Time- and angle-resolved photoemission spectroscopy (TR-ARPES) accesses the electronic structure of solids under optical excitation, and is a powerful technique for studying the coupling between electrons and collective modes. One approach to infer electron-boson coupling is through the relaxation dynamics of optically-excited electrons, and the characteristic timescales of energy redistribution. A common description of electron relaxation dynamics is through the effective electronic temperature. Such a description requires that thermodynamic quantities are well-defined, an assumption that is generally violated at early delays. Additionally, precise estimation of the non-thermal window -- within which effective temperature models may not be applied -- is challenging. We perform TR-ARPES on graphite and show that Boltzmann rate equations can be used to calculate the time-dependent electronic occupation function, and reproduce experimental features given by non-thermal electron occupation. Using this model, we define a quantitative measure of non-thermal electron occupation and use it to define distinct phases of electron relaxation in the fluence-delay phase space. More generally, this approach can be used to inform the non-thermal-to-thermal crossover in pump-probe experiments.
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Submitted 10 September, 2020;
originally announced September 2020.
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Spin-orbit-controlled metal-insulator transition in Sr$_2$IrO$_4$
Authors:
Berend Zwartsenberg,
Ryan P. Day,
Elia Razzoli,
Matteo Michiardi,
Nan Xu,
Ming Shi,
Jonathan D. Denlinger,
Guixin Cao,
Stuart Calder,
Kentaro Ueda,
Joel Bertinshaw,
Hidenori Takagi,
Bumjoon Kim,
Ilya S. Elfimov,
Andrea Damascelli
Abstract:
In the context of correlated insulators, where electron-electron interactions (U) drive the localization of charge carriers, the metal-insulator transition (MIT) is described as either bandwidth (BC) or filling (FC) controlled. Motivated by the challenge of the insulating phase in Sr$_2$IrO$_4$, a new class of correlated insulators has been proposed, in which spin-orbit coupling (SOC) is believed…
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In the context of correlated insulators, where electron-electron interactions (U) drive the localization of charge carriers, the metal-insulator transition (MIT) is described as either bandwidth (BC) or filling (FC) controlled. Motivated by the challenge of the insulating phase in Sr$_2$IrO$_4$, a new class of correlated insulators has been proposed, in which spin-orbit coupling (SOC) is believed to renormalize the bandwidth of the half-filled $j_{\mathrm{eff}} = 1/2$ doublet, allowing a modest U to induce a charge-localized phase. Although this framework has been tacitly assumed, a thorough characterization of the ground state has been elusive. Furthermore, direct evidence for the role of SOC in stabilizing the insulating state has not been established, since previous attempts at revealing the role of SOC have been hindered by concurrently occurring changes to the filling. We overcome this challenge by employing multiple substituents that introduce well defined changes to the signatures of SOC and carrier concentration in the electronic structure, as well as a new methodology that allows us to monitor SOC directly. Specifically, we study Sr$_2$Ir$_{1-x}$T$_x$O$_4$ (T = Ru, Rh) by angle-resolved photoemission spectroscopy (ARPES), combined with ab-initio and supercell tight-binding calculations. This allows us to distinguish relativistic and filling effects, thereby establishing conclusively the central role of SOC in stabilizing the insulating state of Sr$_2$IrO$_4$. Most importantly, we estimate the critical value for spin-orbit coupling in this system to be $λ_c = 0.42 \pm 0.01$ eV, and provide the first demonstration of a spin-orbit-controlled MIT.
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Submitted 30 March, 2020; v1 submitted 1 March, 2019;
originally announced March 2019.
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Cavity-enhanced high harmonic generation for XUV time-resolved ARPES
Authors:
A. K. Mills,
S. Zhdanovich,
M. X. Na,
F. Boschini,
E. Razzoli,
M. Michiardi,
A. Sheyerman,
M. Schneider,
T. J. Hammond,
V. Süss,
C. Felser,
A. Damascelli,
D. J. Jones
Abstract:
With its direct correspondence to electronic structure, angle-resolved photoemission spectroscopy (ARPES) is a ubiquitous tool for the study of solids. When extended to the temporal domain, time-resolved (TR)-ARPES offers the potential to move beyond equilibrium properties, exploring both the unoccupied electronic structure as well as its dynamical response under ultrafast perturbation. Historical…
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With its direct correspondence to electronic structure, angle-resolved photoemission spectroscopy (ARPES) is a ubiquitous tool for the study of solids. When extended to the temporal domain, time-resolved (TR)-ARPES offers the potential to move beyond equilibrium properties, exploring both the unoccupied electronic structure as well as its dynamical response under ultrafast perturbation. Historically, ultrafast extreme ultraviolet (XUV) sources employing high-order harmonic generation (HHG) have required compromises that make it challenging to achieve a high energy resolution - which is highly desirable for many TR-ARPES studies - while producing high photon energies and a high photon flux. We address this challenge by performing HHG inside a femtosecond enhancement cavity (fsEC), realizing a practical source for TR-ARPES that achieves a flux of over 10$^{11}$ photons/s delivered to the sample, operates over a range of 8-40 eV with a repetition rate of 60 MHz. This source enables TR-ARPES studies with a temporal and energy resolution of 190 fs and 22 meV, respectively. To characterize the system, we perform ARPES measurements of polycrystalline Au and MoTe$_2$, as well as TR-ARPES studies on graphite.
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Submitted 15 February, 2019;
originally announced February 2019.
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Direct determination of mode-projected electron-phonon coupling in the time-domain
Authors:
MengXing Na,
Arthur K. Mills,
Fabio Boschini,
Matteo Michiardi,
Benjamin Nosarzewski,
Ryan P. Day,
Elia Razzoli,
Alexander Sheyerman,
Michael Schneider,
Giorgio Levy,
Sergey Zhdanovich,
Thomas P. Devereaux,
Alexander F. Kemper,
David J. Jones,
Andrea Damascelli
Abstract:
Ultrafast spectroscopies have become an important tool for elucidating the microscopic description and dynamical properties of quantum materials. In particular, by tracking the dynamics of non-thermal electrons, a material's dominant scattering processes -- and thus the many-body interactions between electrons and collective excitations -- can be revealed. Here we present a new method for extracti…
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Ultrafast spectroscopies have become an important tool for elucidating the microscopic description and dynamical properties of quantum materials. In particular, by tracking the dynamics of non-thermal electrons, a material's dominant scattering processes -- and thus the many-body interactions between electrons and collective excitations -- can be revealed. Here we present a new method for extracting the electron-phonon coupling strength in the time domain, by means of time and angle-resolved photoemission spectroscopy (TR-ARPES). This method is demonstrated in graphite, where we investigate the dynamics of photo-injected electrons at the K point, detecting quantized energy-loss processes that correspond to the emission of strongly-coupled optical phonons. We show that the observed characteristic timescale for spectral-weight-transfer mediated by phonon-scattering processes allows for the direct quantitative extraction of electron-phonon matrix elements, for specific modes, and with unprecedented sensitivity.
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Submitted 1 August, 2019; v1 submitted 14 February, 2019;
originally announced February 2019.
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Room temperature strain-induced Landau levels in graphene on a wafer-scale platform
Authors:
P. Nigge,
A. C. Qu,
É. Lantagne-Hurtubise,
E. Mårsell,
S. Link,
G. Tom,
M. Zonno,
M. Michiardi,
M. Schneider,
S. Zhdanovich,
G. Levy,
U. Starke,
C. Gutiérrez,
D. Bonn,
S. A. Burke,
M. Franz,
A. Damascelli
Abstract:
Graphene is a powerful playground for studying a plethora of quantum phenomena. One of the remarkable properties of graphene arises when it is strained in particular geometries and the electrons behave as if they were under the influence of a magnetic field. Previously, these strain-induced pseudomagnetic fields have been explored on the nano- and micrometer-scale using scanning probe and transpor…
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Graphene is a powerful playground for studying a plethora of quantum phenomena. One of the remarkable properties of graphene arises when it is strained in particular geometries and the electrons behave as if they were under the influence of a magnetic field. Previously, these strain-induced pseudomagnetic fields have been explored on the nano- and micrometer-scale using scanning probe and transport measurements. Heteroepitaxial strain, in contrast, is a wafer-scale engineering method. Here, we show that pseudomagnetic fields can be generated in graphene through wafer-scale epitaxial growth. Shallow triangular nanoprisms in the SiC substrate generate strain-induced uniform fields of 41 T. This enables the observation of strain-induced Landau levels at room temperature, as detected by angle-resolved photoemission spectroscopy, and confirmed by model calculations and scanning tunneling microscopy measurements. Our work demonstrates the feasibility of exploiting strain-induced quantum phases in two-dimensional Dirac materials on a wafer-scale platform, opening the field to new applications.
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Submitted 22 November, 2019; v1 submitted 1 February, 2019;
originally announced February 2019.
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Emergence of pseudogap from short-range spin-correlations in electron doped cuprates
Authors:
F. Boschini,
M. Zonno,
E. Razzoli,
R. P. Day,
M. Michiardi,
B. Zwartsenberg,
P. Nigge,
M. Schneider,
E. H. da Silva Neto,
A. Erb,
S. Zhdanovich,
A. K. Mills,
G. Levy,
C. Giannetti,
D. J. Jones,
A. Damascelli
Abstract:
Electron interactions are pivotal for defining the electronic structure of quantum materials. In particular, the strong electron Coulomb repulsion is considered the keystone for describing the emergence of exotic and/or ordered phases of quantum matter as disparate as high-temperature superconductivity and charge- or magnetic-order. However, a comprehensive understanding of fundamental electronic…
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Electron interactions are pivotal for defining the electronic structure of quantum materials. In particular, the strong electron Coulomb repulsion is considered the keystone for describing the emergence of exotic and/or ordered phases of quantum matter as disparate as high-temperature superconductivity and charge- or magnetic-order. However, a comprehensive understanding of fundamental electronic properties of quantum materials is often complicated by the appearance of an enigmatic partial suppression of low-energy electronic states, known as the pseudogap. Here we take advantage of ultrafast angle-resolved photoemission spectroscopy to unveil the temperature evolution of the low-energy density of states in the electron-doped cuprate Nd$_{\text{2-x}}$Ce$_{\text{x}}$CuO$_{\text{4}}$, an emblematic system where the pseudogap intertwines with magnetic degrees of freedom. By photoexciting the electronic system across the pseudogap onset temperature T*, we report the direct relation between the momentum-resolved pseudogap spectral features and the spin-correlation length with an unprecedented sensitivity. This transient approach, corroborated by mean field model calculations, allows us to establish the pseudogap in electron-doped cuprates as a precursor to the incipient antiferromagnetic order even when long-range antiferromagnetic correlations are not established, as in the case of optimal doping.
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Submitted 17 August, 2019; v1 submitted 18 December, 2018;
originally announced December 2018.
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Quasi-free-standing single-layer WS2 achieved by intercalation
Authors:
Sanjoy K. Mahatha,
Maciej Dendzik,
Charlotte E. Sanders,
Matteo Michiardi,
Marco Bianchi,
Jill A. Miwa,
Philip Hofmann
Abstract:
Large-area and high-quality single-layer transition metal dichalcogenides can be synthesized by epitaxial growth on single-crystal substrates. An important advantage of this approach is that the interaction between the single-layer and the substrate can be strong enough to enforce a single crystalline orientation of the layer. On the other hand, the same interaction can lead to hybridization effec…
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Large-area and high-quality single-layer transition metal dichalcogenides can be synthesized by epitaxial growth on single-crystal substrates. An important advantage of this approach is that the interaction between the single-layer and the substrate can be strong enough to enforce a single crystalline orientation of the layer. On the other hand, the same interaction can lead to hybridization effects, resulting in the deterioration of the single-layer's native properties. This dilemma can potentially be solved by decoupling the single-layer from the substrate surface after the growth via intercalation of atoms or molecules. Here we show that such a decoupling can indeed be achieved for single-layer WS2 epitaxially grown on Ag(111) by intercalation of Bi atoms. This process leads to a suppression of the single-layer WS2-Ag substrate interaction, yielding an electronic band structure reminiscent of free-standing single-layer WS2.
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Submitted 14 November, 2018;
originally announced November 2018.
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Role of matrix elements in the time-resolved photoemission signal
Authors:
F. Boschini,
D. Bugini,
M. Zonno,
M. Michiardi,
R. P. Day,
E. Razzoli,
B. Zwartsenberg,
E. H. da Silva Neto,
S. dal Conte,
S. K. Kushwaha,
R. J. Cava,
S. Zhdanovich,
A. K. Mills,
G. Levy,
E. Carpene,
C. Dallera,
C. Giannetti,
D. J. Jones,
G. Cerullo,
A. Damascelli
Abstract:
Time- and angle-resolved photoemission spectroscopy accesses the ultrafast evolution of quasiparticles and many-body interactions in solid-state systems. However, the momentum- and energy-resolved transient photoemission intensity may not be unambiguously related to the intrinsic relaxation dynamics of photoexcited electrons. In fact, interpretation of the time-dependent photoemission signal can b…
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Time- and angle-resolved photoemission spectroscopy accesses the ultrafast evolution of quasiparticles and many-body interactions in solid-state systems. However, the momentum- and energy-resolved transient photoemission intensity may not be unambiguously related to the intrinsic relaxation dynamics of photoexcited electrons. In fact, interpretation of the time-dependent photoemission signal can be affected by the transient evolution of both the one-electron removal spectral function as well as the photoemission dipole matrix elements. Here we investigate the topological insulator Bi$_{1.1}$Sb$_{0.9}$Te$_2$S to demonstrate, by means of a careful probe-polarization study, the transient contribution of matrix elements to the time-resolved photoemission signal.
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Submitted 15 October, 2018;
originally announced October 2018.
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Intrinsic Insulating Ground State in Transition Metal Dichalcogenide TiSe2
Authors:
Daniel J. Campbell,
Chris Eckberg,
Peter Y. Zavalij,
Hsiang-Hsi Kung,
Elia Razzoli,
Matteo Michiardi,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Andrea Damascelli,
Johnpierre Paglione
Abstract:
The transition metal dichalcogenide TiSe$_2$ has received significant research attention over the past four decades. Different studies have presented ways to suppress the 200~K charge density wave transition, vary low temperature resistivity by several orders of magnitude, and stabilize magnetism or superconductivity. Here we give the results of a new synthesis technique whereby samples were grown…
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The transition metal dichalcogenide TiSe$_2$ has received significant research attention over the past four decades. Different studies have presented ways to suppress the 200~K charge density wave transition, vary low temperature resistivity by several orders of magnitude, and stabilize magnetism or superconductivity. Here we give the results of a new synthesis technique whereby samples were grown in a high pressure environment with up to 180~bar of argon gas. Above 100~K, properties are nearly unchanged from previous reports, but a hysteretic resistance region that begins around 80~K, accompanied by insulating low temperature behavior, is distinct from anything previously observed. An accompanying decrease in carrier concentration is seen in Hall effect measurements, and photoemission data show a removal of an electron pocket from the Fermi surface in an insulating sample. We conclude that high inert gas pressure synthesis accesses an underlying nonmetallic ground state in a material long speculated to be an excitonic insulator.
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Submitted 17 February, 2019; v1 submitted 25 September, 2018;
originally announced September 2018.
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Influence of an anomalous temperature-dependence of the phase coherence length on the conductivity of magnetic topological insulators
Authors:
V. Tkáč,
K. Výborný,
V. Komanický,
J. Warmuth,
M. Michiardi,
A. S. Ngankeu,
R. Tarasenko M. Vališka,
V. Stetsovych,
K. Carva,
I. Garate,
M. Bianchi,
J. Wiebe,
V. Holý,
Ph. Hofmann,
G. Springholz,
V. Sechovský,
J. Honolka
Abstract:
Magnetotransport constitutes a useful probe to understand the interplay between electronic band topology and magnetism in spintronics devices based on topological materials. A recent theory of Lu and Shen [Phys. Rev. Lett. 112, 146601 (2014)] on magnetically doped topological insulators predicts that quantum corrections $Δκ$ to the temperature-dependence of the conductivity can change sign during…
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Magnetotransport constitutes a useful probe to understand the interplay between electronic band topology and magnetism in spintronics devices based on topological materials. A recent theory of Lu and Shen [Phys. Rev. Lett. 112, 146601 (2014)] on magnetically doped topological insulators predicts that quantum corrections $Δκ$ to the temperature-dependence of the conductivity can change sign during the Curie transition. This phenomenon has been attributed to a suppression of the Berry phase of the topological surface states at the Fermi level, caused by a magnetic energy gap. Here, we demonstrate experimentally that $Δκ$ can reverse its sign even when the Berry phase at the Fermi level remains unchanged, provided that the inelastic scattering length decreases with temperature below the Curie transition.
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Submitted 26 June, 2018;
originally announced June 2018.
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Growth and Structure of Singly-Oriented Single-Layer Tungsten Disulfide on Au(111)
Authors:
Luca Bignardi,
Daniel Lizzit,
Harsh Bana,
Elisabetta Travaglia,
Paolo Lacovig,
Charlotte E. Sanders,
Maciej Dendzik,
Matteo Michiardi,
Marco Bianchi,
Moritz Ewert,
Lars Buß,
Jens Falta,
Jan Ingo Flege,
Alessandro Baraldi,
Rosanna Larciprete,
Philip Hofmann,
Silvano Lizzit
Abstract:
We present a complete characterisation at the nanoscale of the growth and structure of single-layer tungsten disulfide (WS$_2$) epitaxially grown on Au(111). Following the growth process in real time with fast x-ray photoelectron spectroscopy, we obtain a singly-oriented layer by choosing the proper W evaporation rate and substrate temperature during the growth. Information about the morphology, s…
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We present a complete characterisation at the nanoscale of the growth and structure of single-layer tungsten disulfide (WS$_2$) epitaxially grown on Au(111). Following the growth process in real time with fast x-ray photoelectron spectroscopy, we obtain a singly-oriented layer by choosing the proper W evaporation rate and substrate temperature during the growth. Information about the morphology, size and layer stacking of the WS$_2$ layer were achieved by employing x-ray photoelectron diffraction and low-energy electron microscopy. The strong spin splitting in the valence band of WS$_2$ coupled with the single-orientation character of the layer make this material the ideal candidate for the exploitation of the spin and valley degrees of freedom.
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Submitted 19 September, 2018; v1 submitted 13 June, 2018;
originally announced June 2018.
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Epitaxial Growth of Single-Orientation High-Quality MoS$_2$ Monolayers
Authors:
Harsh Bana,
Elisabetta Travaglia,
Luca Bignardi,
Paolo Lacovig,
Charlotte E. Sanders,
Maciej Dendzik,
Matteo Michiardi,
Marco Bianchi,
Daniel Lizzit,
Francesco Presel,
Dario De Angelis,
Nicoleta Apostol,
Pranab Kumar Das,
Jun Fujii,
Ivana Vobornik,
Rosanna Larciprete,
Alessandro Baraldi,
Philip Hofmann,
Silvano Lizzit
Abstract:
We present a study on the growth and characterization of high-quality single-layer MoS$_2$ with a single orientation, i.e. without the presence of mirror domains. This single orientation of the MoS$_2$ layer is established by means of x-ray photoelectron diffraction. The high quality is evidenced by combining scanning tunneling microscopy with x-ray photoelectron spectroscopy measurements. Spin- a…
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We present a study on the growth and characterization of high-quality single-layer MoS$_2$ with a single orientation, i.e. without the presence of mirror domains. This single orientation of the MoS$_2$ layer is established by means of x-ray photoelectron diffraction. The high quality is evidenced by combining scanning tunneling microscopy with x-ray photoelectron spectroscopy measurements. Spin- and angle-resolved photoemission experiments performed on the sample revealed complete spin-polarization of the valence band states near the K and -K points of the Brillouin zone. These findings open up the possibility to exploit the spin and valley degrees of freedom for encoding and processing information in devices that are based on epitaxially grown materials.
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Submitted 9 February, 2018; v1 submitted 6 February, 2018;
originally announced February 2018.
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Stable Weyl points, trivial surface states and particle-hole compensation in WP2
Authors:
E. Razzoli,
B. Zwartsenberg,
M. Michiardi,
F. Boschini,
R. P. Day,
I. S. Elfimov,
J. D. Denlinger,
V. Süß,
C. Felser,
A. Damascelli
Abstract:
A possible connection between extremely large magneto-resistance and the presence of Weyl points has garnered much attention in the study of topological semimetals. Exploration of these concepts in transition metal phosphide WP2 has been complicated by conflicting experimental reports. Here we combine angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculation…
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A possible connection between extremely large magneto-resistance and the presence of Weyl points has garnered much attention in the study of topological semimetals. Exploration of these concepts in transition metal phosphide WP2 has been complicated by conflicting experimental reports. Here we combine angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations to disentangle surface and bulk contributions to the ARPES intensity, the superposition of which has plagued the determination of the electronic structure in WP2. Our results show that while the hole- and electron-like Fermi surface sheets originating from surface states have different areas, the bulk-band structure of WP2 is electron-hole-compensated in agreement with DFT. Furthermore, the detailed band structure is compatible with the presence of at least 4 temperature-independent Weyl points, confirming the topological nature of WP2 and its stability against lattice distortions.
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Submitted 11 January, 2018;
originally announced January 2018.
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Electronic Structure of Fe$_{1.08}$Te bulk crystals and epitaxial FeTe thin films on Bi$_2$Te$_3$
Authors:
Fabian Arnold,
Jonas Warmuth,
Matteo Michiardi,
Jan Fikáucek,
Marco Bianchi,
Jin Hu,
Zhiqiang Mao,
Jill Miwa,
Udai Raj Singh,
Martin Bremholm,
Roland Wiesendanger,
Jan Honolka,
Tim Wehling,
Jens Wiebe,
Philip Hofmann
Abstract:
The electronic structure of thin films of FeTe grown on Bi$_2$Te$_3$ is investigated using angle-resolved photoemission spectroscopy, scanning tunneling microscopy and first principles calculations. As a comparison, data from cleaved bulk \FeTe taken under the same experimental conditions is also presented. Due to the substrate and thin film symmetry, FeTe thin films grow on Bi$_2$Te$_3$ in three…
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The electronic structure of thin films of FeTe grown on Bi$_2$Te$_3$ is investigated using angle-resolved photoemission spectroscopy, scanning tunneling microscopy and first principles calculations. As a comparison, data from cleaved bulk \FeTe taken under the same experimental conditions is also presented. Due to the substrate and thin film symmetry, FeTe thin films grow on Bi$_2$Te$_3$ in three domains, rotated by 0$^{\circ}$, 120$^{\circ}$, and 240$^{\circ}$. This results in a superposition of photoemission intensity from the domains, complicating the analysis. However, by combining bulk and thin film data, it is possible to partly disentangle the contributions from three domains. We find a close similarity between thin film and bulk electronic structure and an overall good agreement with first principles calculations, assuming a p-doping shift of 65~meV for the bulk and a renormalization factor of around 2. By tracking the change of substrate electronic structure upon film growth, we find indications of an electron transfer from the FeTe film to the substrate. No significant change of the film's electronic structure or doping is observed when alkali atoms are dosed onto the surface. This is ascribed to the film's high density of states at the Fermi energy. This behavior is also supported by the ab-initio calculations.
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Submitted 19 November, 2017;
originally announced November 2017.
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Influence of Spin Orbit Coupling in the Iron-Based Superconductors
Authors:
R. P. Day,
G. Levy,
M. Michiardi,
B. Zwartsenberg,
M. Zonno,
F. Ji,
E. Razzoli,
F. Boschini,
S. Chi,
R. Liang,
P. K. Das,
I. Vobornik,
J. Fujii,
D. A. Bonn,
W. N. Hardy,
I. S. Elfimov,
A. Damascelli
Abstract:
We report on the influence of spin-orbit coupling (SOC) in the Fe-based superconductors (FeSCs) via application of circularly-polarized spin and angle-resolved photoemission spectroscopy. We combine this technique in representative members of both the Fe-pnictides and Fe-chalcogenides with ab initio density functional theory and tight-binding calculations to establish an ubiquitous modification of…
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We report on the influence of spin-orbit coupling (SOC) in the Fe-based superconductors (FeSCs) via application of circularly-polarized spin and angle-resolved photoemission spectroscopy. We combine this technique in representative members of both the Fe-pnictides and Fe-chalcogenides with ab initio density functional theory and tight-binding calculations to establish an ubiquitous modification of the electronic structure in these materials imbued by SOC. The influence of SOC is found to be concentrated on the hole pockets where the superconducting gap is generally found to be largest. This result contests descriptions of superconductivity in these materials in terms of pure spin-singlet eigenstates, raising questions regarding the possible pairing mechanisms and role of SOC therein.
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Submitted 20 July, 2018; v1 submitted 17 November, 2017;
originally announced November 2017.
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Contact-Induced Semiconductor-to-Metal Transition in Single-Layer WS$_2$
Authors:
Maciej Dendzik,
Albert Bruix,
Matteo Michiardi,
Arlette S. Ngankeu,
Marco Bianchi,
Jill A. Miwa,
Bjørk Hammer,
Philip Hofmann,
Charlotte E. Sanders
Abstract:
Low-resistance ohmic contacts are a challenge for electronic devices based on two-dimensional materials. We show that an atomically precise junction between a two-dimensional semiconductor and a metallic contact can lead to a semiconductor-to-metal transition in the two-dimensional material--a finding which points the way to a possible method of achieving low-resistance junctions. Specifically, si…
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Low-resistance ohmic contacts are a challenge for electronic devices based on two-dimensional materials. We show that an atomically precise junction between a two-dimensional semiconductor and a metallic contact can lead to a semiconductor-to-metal transition in the two-dimensional material--a finding which points the way to a possible method of achieving low-resistance junctions. Specifically, single-layer WS$_2$ undergoes a semiconductor-to-metal transition when epitaxially grown on Ag(111), while it remains a direct band gap semiconductor on Au(111). The metallicity of the single layer on Ag(111) is established by lineshape analysis of core level photoemission spectra. Angle-resolved photoemission spectroscopy locates the metallic states near the Q point of the WS$_2$ Brillouin zone. Density functional theory calculations show that the metallic states arise from hybridization between Ag bulk bands and the local conduction band minimum of WS$_2$ near the Q point.
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Submitted 9 August, 2017;
originally announced August 2017.
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Collapse of superconductivity in cuprates via ultrafast quenching of phase coherence
Authors:
F. Boschini,
E. H. da Silva Neto,
E. Razzoli,
M. Zonno,
S. Peli,
R. P. Day,
M. Michiardi,
M. Schneider,
B. Zwartsenberg,
P. Nigge,
R. D. Zhong,
J. Schneeloch,
G. D. Gu,
S. Zhdanovich,
A. K. Mills,
G. Levy,
D. J. Jones,
C. Giannetti,
A. Damascelli
Abstract:
The possibility of driving phase transitions in low-density condensates through the loss of phase coherence alone has far-reaching implications for the study of quantum phases of matter. This has inspired the development of tools to control and explore the collective properties of condensate phases via phase fluctuations. Electrically-gated oxide interfaces, ultracold Fermi atoms, and cuprate supe…
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The possibility of driving phase transitions in low-density condensates through the loss of phase coherence alone has far-reaching implications for the study of quantum phases of matter. This has inspired the development of tools to control and explore the collective properties of condensate phases via phase fluctuations. Electrically-gated oxide interfaces, ultracold Fermi atoms, and cuprate superconductors, which are characterized by an intrinsically small phase-stiffness, are paradigmatic examples where these tools are having a dramatic impact. Here we use light pulses shorter than the internal thermalization time to drive and probe the phase fragility of the Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ cuprate superconductor, completely melting the superconducting condensate without affecting the pairing strength. The resulting ultrafast dynamics of phase fluctuations and charge excitations are captured and disentangled by time-resolved photoemission spectroscopy. This work demonstrates the dominant role of phase coherence in the superconductor-to-normal state phase transition and offers a benchmark for non-equilibrium spectroscopic investigations of the cuprate phase diagram.
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Submitted 2 April, 2018; v1 submitted 7 July, 2017;
originally announced July 2017.
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Symmetry-enforced Fermi degeneracy in topological semimetal RhSb$_3$
Authors:
Kefeng Wang,
Limin Wang,
I-Lin Liu,
F. Boschini,
M. Zonno,
M. Michiardi,
E. Rotenberg,
A. Bostwick,
D. Graf,
B. J. Ramshaw,
A. Damascelli,
J. Paglione
Abstract:
Predictions of a topological electronic structure in the skutterudite TPn$_3$ family (T=transition metal, Pn=pnictogen) are investigated via magnetoresistance, quantum oscillations and angle-resolved photoemission experiments of RhSb$_3$, an unfilled skutterudite semimetal with low carrier density. Electronic band structure calculations and symmetry analysis of RhSb$_3$ indicate this material to b…
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Predictions of a topological electronic structure in the skutterudite TPn$_3$ family (T=transition metal, Pn=pnictogen) are investigated via magnetoresistance, quantum oscillations and angle-resolved photoemission experiments of RhSb$_3$, an unfilled skutterudite semimetal with low carrier density. Electronic band structure calculations and symmetry analysis of RhSb$_3$ indicate this material to be a zero-gap semimetal protected by symmetry with inverted valence/conduction bands that touch at the $Γ$ point close to the Fermi level. Transport experiments reveal an unsaturated linear magnetoresistance that approaches a factor of 200 at 60~T magnetic fields, and quantum oscillations observable up to 150~K that are consistent with a large Fermi velocity ($\sim 1.3\times 10^6$ m/s), high carrier mobility ($\sim 14$ m$^2$/Vs), and the existence of a small three dimensional hole pocket. A very small, sample-dependent effective mass falls to values as low as $0.018(2)$ of the bare electron mass and scales with Fermi wavevector. This, together with a non-zero Berry's phase and location of the Fermi level in the linear region of the valence band, suggests RhSb$_3$ as representative of a new class of toplogical semimeals with symmetry-enforced Fermi degeneracy at the high symmetry points.
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Submitted 18 October, 2022; v1 submitted 14 March, 2017;
originally announced March 2017.
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Reconstruction-induced trefoil knot Fermi contour of Au(111)
Authors:
Maciej Dendzik,
Marco Bianchi,
Matteo Michiardi,
Charlotte E. Sanders,
Philip Hofmann
Abstract:
Using angle-resolved photoemission spectroscopy (ARPES), we study the effect of the so-called herringbone reconstruction of Au(111) on the dispersion of the free electron-like surface state. While earlier ARPES investigations have only reported a minor interplay of the surface state dispersion and the underlying reconstruction, we show that the uniaxial lattice distortion and the thereby changed r…
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Using angle-resolved photoemission spectroscopy (ARPES), we study the effect of the so-called herringbone reconstruction of Au(111) on the dispersion of the free electron-like surface state. While earlier ARPES investigations have only reported a minor interplay of the surface state dispersion and the underlying reconstruction, we show that the uniaxial lattice distortion and the thereby changed reciprocal lattice for the first atomic layer leads to distinct surface state dispersions around the first order reciprocal lattice points of the three domains, creating a constant energy surface resembling a trefoil knot. The findings resolve the long-standing discrepancy between, on one hand, the reconstruction-induced surface state modifications reported in scanning tunnelling microscopy and first principle calculations and, on the other hand, their conspicuous absence in photoemission.
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Submitted 6 October, 2016;
originally announced October 2016.
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Absence of superconductivity in ultra-thin layers of FeSe synthesized on a topological insulator
Authors:
Andreas Eich,
Nils Rollfing,
Fabian Arnold,
Charlotte Sanders,
Pascal R. Ewen,
Marco Bianchi,
Maciej Dendzik,
Matteo Michiardi,
Jian-Li Mi,
Martin Bremholm,
Daniel Wegner,
Philip Hofmann,
Alexander A. Khajetoorians
Abstract:
The structural and electronic properties of FeSe ultra-thin layers on Bi$_{2}$Se$_{3}$ have been investigated with a combination of scanning tunneling microscopy and spectroscopy and angle-resolved photoemission spectroscopy. The FeSe multi-layers, which are predominantly 3-5 monolayers (ML) thick, exhibit a hole pocket-like electron band at \barΓ and a dumbbell-like feature at \bar{M}, similar to…
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The structural and electronic properties of FeSe ultra-thin layers on Bi$_{2}$Se$_{3}$ have been investigated with a combination of scanning tunneling microscopy and spectroscopy and angle-resolved photoemission spectroscopy. The FeSe multi-layers, which are predominantly 3-5 monolayers (ML) thick, exhibit a hole pocket-like electron band at \barΓ and a dumbbell-like feature at \bar{M}, similar to multi-layers of FeSe on SrTiO$_{3}$. Moreover, the topological state of the Bi2Se3 is preserved beneath the FeSe layer, as indicated by a heavily \it{n}-doped Dirac cone. Low temperature STS does not exhibit a superconducting gap for any investigated thickness down to a temperature of 5 K.
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Submitted 26 September, 2016; v1 submitted 18 June, 2016;
originally announced June 2016.
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Non-magnetic ground state of Ni adatoms on Te-terminated bismuth chalcogenide topological insulators
Authors:
M. Vondracek,
J. Honolka,
L. Cornils,
J. Warmuth,
L. Zhou,
A. Kamlapure,
A. A. Khajetoorians,
R. Wiesendanger,
J. Wiebe,
M. Michiardi,
M. Bianchi,
J. Miwa,
L. Barreto,
P. Hofmann,
C. Piamonteze,
J. Minar,
S. Mankovsky,
St. Borek,
H. Ebert,
M. Schueler,
T. Wehling,
J. -L. Mi,
B. -B. Iversen
Abstract:
We report on the quenching of single Ni adatom moments on Te-terminated Bi2Te2Se and Bi2Te3 topological insulator surfaces. The effect becomes manifested as a missing X-ray magnetic circular dichroism for resonant L3,2 transitions into partially filled Ni 3d states of occupancy n_d = 9.2. On the basis of a comparative study of Ni and Fe using scanning tunneling microscopy and ab initio calculation…
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We report on the quenching of single Ni adatom moments on Te-terminated Bi2Te2Se and Bi2Te3 topological insulator surfaces. The effect becomes manifested as a missing X-ray magnetic circular dichroism for resonant L3,2 transitions into partially filled Ni 3d states of occupancy n_d = 9.2. On the basis of a comparative study of Ni and Fe using scanning tunneling microscopy and ab initio calculations we are able to relate the element specific moment formation to a local Stoner criterion. While Fe adatoms form large spin moments of m_s = 2.54 mu_B with out-of-plane anisotropy due to a sufficiently large density of states at the Fermi energy, Ni remains well below an effective Stoner threshold for local moment formation. With the Fermi level remaining in the bulk band gap after adatom deposition, non-magnetic Ni and preferentially out-of-plane oriented magnetic Fe with similar structural properties on Bi2Te2Se surfaces constitute a perfect platform to study off-on effects of time-reversal symmetry breaking on topological surface states.
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Submitted 31 March, 2016;
originally announced March 2016.
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Band gap engineering by Bi intercalation of graphene on Ir(111)
Authors:
Jonas Warmuth,
Albert Bruix,
Matteo Michiardi,
Torben Hänke,
Marco Bianchi,
Jens Wiebe,
Roland Wiesendanger,
Bjørk Hammer,
Philip Hofmann,
Alexander A. Khajetoorians
Abstract:
We report on the structural and electronic properties of a single bismuth layer intercalated underneath a graphene layer grown on an Ir(111) single crystal. Scanning tunneling microscopy (STM) reveals a hexagonal surface structure and a dislocation network upon Bi intercalation, which we attribute to a $\sqrt{3}\times\sqrt{3}R30°$ Bi structure on the underlying Ir(111) surface. Ab-initio calculati…
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We report on the structural and electronic properties of a single bismuth layer intercalated underneath a graphene layer grown on an Ir(111) single crystal. Scanning tunneling microscopy (STM) reveals a hexagonal surface structure and a dislocation network upon Bi intercalation, which we attribute to a $\sqrt{3}\times\sqrt{3}R30°$ Bi structure on the underlying Ir(111) surface. Ab-initio calculations show that this Bi structure is the most energetically favorable, and also illustrate that STM measurements are most sensitive to C atoms in close proximity to intercalated Bi atoms. Additionally, Bi intercalation induces a band gap ($E_g=0.42\,$eV) at the Dirac point of graphene and an overall n-doping ($\sim 0.39\,$eV), as seen in angular-resolved photoemission spectroscopy. We attribute the emergence of the band gap to the dislocation network which forms favorably along certain parts of the moiré structure induced by the graphene/Ir(111) interface.
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Submitted 29 March, 2016;
originally announced March 2016.
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Topological insulator homojunctions including magnetic layers: the example of n-p type ($n$-QLs Bi$_2$Se$_3$/Mn-Bi$_2$Se$_3$) heterostructures
Authors:
M. Valiska,
J. Warmuth,
M. Michiardi,
M. Vondracek,
A. S. Ngankeu,
V. Holy,
V. Sechovsky,
G. Springholz,
M. Bianchi,
J. Wiebe,
P. Hofmann,
J. Honolka
Abstract:
Homojunctions between Bi$_2$Se$_3$ and its Mn-doped phase are investigated as a sample geometry to study the influence of spin degrees of freedom on topological insulator properties. $n$ quintuple layers (QLs) of Bi$_2$Se$_3$ are grown ontop of Mn-doped Bi$_2$Se$_3$ by molecular beam epitaxy for $0\le n \le 30\,$QLs, allowing to unhamperedly monitor the development of electronic and topological pr…
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Homojunctions between Bi$_2$Se$_3$ and its Mn-doped phase are investigated as a sample geometry to study the influence of spin degrees of freedom on topological insulator properties. $n$ quintuple layers (QLs) of Bi$_2$Se$_3$ are grown ontop of Mn-doped Bi$_2$Se$_3$ by molecular beam epitaxy for $0\le n \le 30\,$QLs, allowing to unhamperedly monitor the development of electronic and topological properties by surface sensitive techniques like angle resolved photoemission spectroscopy. With increasing $n$, a Mn-induced gap at the Dirac point is gradually filled in an "hourglass" fashion to reestablish a topological surface state at $n \sim 9\,$QLs. Our results suggest a competition of upwards and downwards band bending effects due to the presence of an n-p type interface, which can be used to tailor topological and quantum well states independently.
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Submitted 10 February, 2016;
originally announced February 2016.
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Growth and electronic structure of epitaxial single-layer WS$_2$ on Au(111)
Authors:
Maciej Dendzik,
Matteo Michiardi,
Charlotte Sanders,
Marco Bianchi,
Jill A. Miwa,
Signe S. Grønborg,
Jeppe Vang Lauritsen,
Philip Hofmann
Abstract:
Large-area single-layer WS$_2$ is grown epitaxially on Au(111) using evaporation of W atoms in a low pressure H$_2$S atmosphere. It is characterized by means of scanning tunneling microscopy, low-energy electron diffraction and core-level spectroscopy. Its electronic band structure is determined by angle-resolved photoemission spectroscopy. The valence band maximum at $\bar{K}$ is found to be sign…
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Large-area single-layer WS$_2$ is grown epitaxially on Au(111) using evaporation of W atoms in a low pressure H$_2$S atmosphere. It is characterized by means of scanning tunneling microscopy, low-energy electron diffraction and core-level spectroscopy. Its electronic band structure is determined by angle-resolved photoemission spectroscopy. The valence band maximum at $\bar{K}$ is found to be significantly higher than at $\barΓ$. The observed dispersion around $\bar{K}$ is in good agreement with density functional theory calculations for a free-standing monolayer, whereas the bands at $\barΓ$ are found to be hybridized with states originating from the Au substrate. Strong spin-orbit coupling leads to a large spin-splitting of the bands in the neighborhood of the $\bar{K}$ points, with a maximum splitting of 419(11)~meV. The valence band dispersion around $\bar{K}$ is found to be highly anisotropic with spin-branch dependent effective hole masses of $0.40(02)m_e$ and $0.57(09)m_e$ for the upper and lower split valence band, respectively. The large size of the spin-splitting and the low effective mass of the valence band maximum make single-layer WS$_2$ a promising alternative to the widely studied MoS$_2$ for applications in electronics, spintronics and valleytronics.
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Submitted 17 September, 2015;
originally announced September 2015.
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Strongly anisotropic spin-orbit splitting in a two-dimensional electron gas
Authors:
Matteo Michiardi,
Marco Bianchi,
Maciej Dendzik,
Jill Miwa,
Moritz Hoesch,
Timur K. Kim,
Peter Matzen,
Jianli Mi,
Martin Bremholm,
Bo Brummerstedt Iversen,
Philip Hofmann
Abstract:
Near-surface two-dimensional electron gases on the topological insulator Bi$_2$Te$_2$Se are induced by electron doping and studied by angle-resolved photoemission spectroscopy. A pronounced spin-orbit splitting is observed for these states. The $k$-dependent splitting is strongly anisotropic to a degree where a large splitting ($\approx 0.06$ Å$^{-1}$) can be found in the $\barΓ\bar{M}$ direction…
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Near-surface two-dimensional electron gases on the topological insulator Bi$_2$Te$_2$Se are induced by electron doping and studied by angle-resolved photoemission spectroscopy. A pronounced spin-orbit splitting is observed for these states. The $k$-dependent splitting is strongly anisotropic to a degree where a large splitting ($\approx 0.06$ Å$^{-1}$) can be found in the $\barΓ\bar{M}$ direction while the states are hardly split along $\barΓ\bar{K}$. The direction of the anisotropy is found to be qualitatively inconsistent with results expected for a third-order anisotropic Rashba Hamiltonian. However, a $\mathbf{k} \cdot \mathbf{p}$ model that includes the possibility of band structure anisotropy as well as both isotropic and anisotropic third order Rashba splitting can explain the results. The isotropic third order contribution to the Rashba Hamiltonian is found to be negative, reducing the energy splitting at high $k$. The interplay of band structure, higher order Rashba effect and tuneable doping offers the opportunity to engineer not only the size of the spin-orbit splitting but also its direction.
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Submitted 26 November, 2014;
originally announced November 2014.
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Intra- and Interband Electron Scattering in the Complex Hybrid Topological Insulator Bismuth Bilayer on Bi$_2$Se$_3$
Authors:
A. Eich,
M. Michiardi,
G. Bihlmayer,
X. -G. Zhu,
J. -L. Mi,
Bo B. Iversen,
R. Wiesendanger,
Ph. Hofmann,
A. A. Khajetoorians,
J. Wiebe
Abstract:
The band structure, intra- and interband scattering processes of the electrons at the surface of a bismuth-bilayer on Bi$_2$Se$_3$ have been experimentally investigated by low-temperature Fourier-transform scanning tunneling spectroscopy. The observed complex quasiparticle interference patterns are compared to a simulation based on the spin-dependent joint density of states approach using the surf…
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The band structure, intra- and interband scattering processes of the electrons at the surface of a bismuth-bilayer on Bi$_2$Se$_3$ have been experimentally investigated by low-temperature Fourier-transform scanning tunneling spectroscopy. The observed complex quasiparticle interference patterns are compared to a simulation based on the spin-dependent joint density of states approach using the surface-localized spectral function calculated from first principles as the only input. Thereby, the origin of the quasiparticle interferences can be traced back to intraband scattering in the bismuth bilayer valence band and Bi$_2$Se$_3$ conduction band, and to interband scattering between the two-dimensional topological state and the bismuth-bilayer valence band. The investigation reveals that the bilayer band gap, which is predicted to host one-dimensional topological states at the edges of the bilayer, is pushed several hundred milli-electronvolts above the Fermi level. This result is rationalized by an electron transfer from the bilayer to Bi$_2$Se$_3$ which also leads to a two-dimensional electron state in the Bi$_2$Se$_3$ conduction band with a strong Rashba spin-splitting, coexisting with the topological state and bilayer valence band.
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Submitted 24 September, 2014;
originally announced September 2014.
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Direct observation of spin-polarised bulk bands in an inversion-symmetric semiconductor
Authors:
J. M. Riley,
F. Mazzola,
M. Dendzik,
M. Michiardi,
T. Takayama,
L. Bawden,
C. Granerød,
M. Leandersson,
T. Balasubramanian,
M. Hoesch,
T. K. Kim,
H. Takagi,
W. Meevasana,
Ph. Hofmann,
M. S. Bahramy,
J. W. Wells,
P. D. C. King
Abstract:
Methods to generate spin-polarised electronic states in non-magnetic solids are strongly desired to enable all-electrical manipulation of electron spins for new quantum devices. This is generally accepted to require breaking global structural inversion symmetry. In contrast, here we present direct evidence from spin- and angle-resolved photoemission spectroscopy for a strong spin polarisation of b…
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Methods to generate spin-polarised electronic states in non-magnetic solids are strongly desired to enable all-electrical manipulation of electron spins for new quantum devices. This is generally accepted to require breaking global structural inversion symmetry. In contrast, here we present direct evidence from spin- and angle-resolved photoemission spectroscopy for a strong spin polarisation of bulk states in the centrosymmetric transition-metal dichalcogenide WSe$_2$. We show how this arises due to a lack of inversion symmetry in constituent structural units of the bulk crystal where the electronic states are localised, leading to enormous spin splittings up to $\sim\!0.5$ eV, with a spin texture that is strongly modulated in both real and momentum space. As well as providing the first experimental evidence for a recently-predicted `hidden' spin polarisation in inversion-symmetric materials, our study sheds new light on a putative spin-valley coupling in transition-metal dichalcogenides, of key importance for using these compounds in proposed valleytronic devices.
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Submitted 28 August, 2014;
originally announced August 2014.
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Bulk Band Structure of Bi$_2$Te$_3$
Authors:
Matteo Michiardi,
Irene Aguilera,
Marco Bianchi,
Vagner Eustáquio de Carvalho,
Luiz Orlando Ladeira,
Nayara Gomes Teixeira,
Edmar Avellar Soares,
Chiristoph Friedrich,
Stefan Blügel,
Philip Hofmann
Abstract:
The bulk band structure of Bi$_2$Te$_3$ has been determined by angle-resolved photoemission spectroscopy and compared to first-principles calculations. We have performed calculations using the local density approximation (LDA) of density functional theory and the one-shot $GW$ approximation within the all-electron full-potential linearized augmented-plane-wave (FLAPW) formalism, fully taking into…
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The bulk band structure of Bi$_2$Te$_3$ has been determined by angle-resolved photoemission spectroscopy and compared to first-principles calculations. We have performed calculations using the local density approximation (LDA) of density functional theory and the one-shot $GW$ approximation within the all-electron full-potential linearized augmented-plane-wave (FLAPW) formalism, fully taking into account spin-orbit coupling. Quasiparticle effects produce significant changes in the band structure of \bite~when compared to LDA. Experimental and calculated results are compared in the spectral regions where distinct differences between the LDA and $GW$ results are present. Overall a superior agreement with $GW$ is found, highlighting the importance of many-body effects in the band structure of this family of topological insulators.
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Submitted 12 March, 2014;
originally announced March 2014.