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Dirac Fermion Cloning, Moir$\bf{é}$ Flat Bands and Magic Lattice Constants in Epitaxial Monolayer Graphene
Authors:
Qiangsheng Lu,
Ching-Kai Chiu,
Congcong Le,
Jacob Cook,
Xiaoqian Zhang,
Xiaoqing He,
Mohammad Zarenia,
Mitchel Vaninger,
Paul F. Miceli,
Chang Liu,
Tai-Chang Chiang,
Giovanni Vignale,
Guang Bian
Abstract:
Tuning interactions between Dirac states in graphene has attracted enormous interest because it can modify the electronic spectrum of the two-dimensional material, enhance electron correlations, and give rise to novel condensed-matter phases such as superconductors, Mott insulators, Wigner crystals and quantum anomalous Hall insulators. Previous works predominantly focus on the flat band dispersio…
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Tuning interactions between Dirac states in graphene has attracted enormous interest because it can modify the electronic spectrum of the two-dimensional material, enhance electron correlations, and give rise to novel condensed-matter phases such as superconductors, Mott insulators, Wigner crystals and quantum anomalous Hall insulators. Previous works predominantly focus on the flat band dispersion of coupled Dirac states from different graphene layers. In this work, we propose a new route to realizing flat band physics in monolayer graphene under a periodic modulation from substrates. We take gaphene/SiC heterostructure as a role model and demonstrate experimentally the substrate modulation leads to Dirac fermion cloning and consequently, the proximity of the two Dirac cones of monolayer graphene in momentum space. Our theoretical modeling captures the cloning mechanism of Dirac states and indicates that flat bands can emerge at certain magic lattice constants of substrate when the period of modulation becomes nearly commensurate with the $(\sqrt{3}\times\sqrt{3})R30^{\circ}$ supercell of graphene. The results show that the epitaxial monolayer graphene is a promising platform for exploring exotic many-body quantum phases arising from interactions between Dirac electrons.
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Submitted 18 March, 2021;
originally announced March 2021.
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Magnetic anisotropy in single crystal high entropy perovskite oxide La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 films
Authors:
Yogesh Sharma,
Qiang Zheng,
Alessandro R. Mazza,
Elizabeth Skoropata,
Thomas Heitmann,
Zheng Gai,
Brianna Musico,
Paul F. Miceli,
Brian C. Sales,
Veerle Keppens,
Matthew Brahlek,
Thomas Zac Ward
Abstract:
Local configurational disorder can have a dominating role in the formation of macroscopic functional responses in strongly correlated materials. Here, we use entropy-stabilization synthesis to create single crystal epitaxial ABO3 perovskite thin films with equal atomic concentration of 3d transition metal cations on the B-site sublattice. X-ray diffraction, atomic force microscopy, and scanning tr…
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Local configurational disorder can have a dominating role in the formation of macroscopic functional responses in strongly correlated materials. Here, we use entropy-stabilization synthesis to create single crystal epitaxial ABO3 perovskite thin films with equal atomic concentration of 3d transition metal cations on the B-site sublattice. X-ray diffraction, atomic force microscopy, and scanning transmission electron microscopy of La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 (L5BO) films demonstrate excellent crystallinity, smooth film surfaces, and uniform mixing of the 3d transition metal cations throughout the B-site sublattice. The magnetic properties are strongly dependent on substrate-induced lattice anisotropy and suggest the presence of long-range magnetic order in these exceptionally disordered materials. The ability to populate multiple elements onto a single sublattice in complex crystal structures opens new possibilities to design functionality in correlated systems and enable novel fundamental studies seeking to understand how diverse local bonding environments can work to generate macroscopic responses, such as those driven by electron-phonon channels and complex exchange interaction pathways.
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Submitted 11 September, 2019;
originally announced September 2019.
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The structure and evolution of semiconducting buffer graphene grown on SiC(0001)
Authors:
M. Conrad,
J. Rault,
Y. Utsumi,
Y. Garreau,
A. Vlad,
A. Coati,
J. -P. Rueff,
P. F. Miceli,
E. H. Conrad
Abstract:
Using highly controlled coverages of graphene on SiC(0001), we have studied the structure of the first graphene layer that grows on the SiC interface. This layer, known as the buffer layer, is semiconducting. Using x-ray reflectivity and x-ray standing waves analysis we have performed a comparative study of the buffer layer structure with and without an additional monolayer graphene layer above it…
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Using highly controlled coverages of graphene on SiC(0001), we have studied the structure of the first graphene layer that grows on the SiC interface. This layer, known as the buffer layer, is semiconducting. Using x-ray reflectivity and x-ray standing waves analysis we have performed a comparative study of the buffer layer structure with and without an additional monolayer graphene layer above it. We show that no more than 26\% of the buffer carbon is covalently bonded to Si in the SiC interface. We also show that the top SiC bilayer is Si depleted and is the likely the cause of the incommensuration previously observed in this system. When a monolayer graphene layer forms above the buffer, the buffer layer becomes less corrugated with signs of a change in the bonding geometry with the SiC interface. At the same time, the entire SiC interface becomes more disordered, presumably due to entropy associated with the higher growth temperature.
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Submitted 7 July, 2017;
originally announced July 2017.
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Mott insulator-to-metal transition in yttrium-doped CaIrO3
Authors:
J. Gunasekera,
Y. Chen,
J. W. Kremenak,
P. F. Miceli,
D. K. Singh
Abstract:
We report on the study of insulator-to-metal transition in post-perovskite compound CaIrO3. It is discovered that a gradual chemical substitution of calcium by yttrium leads to the onset of strong metallic behavior in this compound. This observation is in stark contrast to BaIrO3, which preserves its Mott insulating behavior despite excess of charge carriers due to yttrium doping. Magnetic measure…
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We report on the study of insulator-to-metal transition in post-perovskite compound CaIrO3. It is discovered that a gradual chemical substitution of calcium by yttrium leads to the onset of strong metallic behavior in this compound. This observation is in stark contrast to BaIrO3, which preserves its Mott insulating behavior despite excess of charge carriers due to yttrium doping. Magnetic measurements reveal that both compounds tend to exhibit magnetic character irrespective of the chemical substitution of Ca or Ba. We analyze these unusual observations in light of recent researches that suggest that unlike BaIrO3, CaIrO3 does not necessarily possess j = 1/2 ground state due to structural distortion. The insulator-to-metal transition in CaIrO3 will spur new researches to explore more exotic ground state, including superconductivity, in post-perovskite Mott insulators.
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Submitted 25 September, 2014; v1 submitted 2 May, 2014;
originally announced May 2014.
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Distribution of parallel vortices studied by spin-polarized neutron reflectivity and magnetization
Authors:
S. -W. Han,
P. F. Miceli,
J. Farmer,
G. Felcher,
R. Goyette,
G. T. Kiehne,
J. B. Ketterson
Abstract:
We present the studies of non-uniformly distributed vortices in Nb/Al multilayers at applied field near parallel to film surface by using spin-polarized neutron reflectivity (SPNR) and DC magnetization measurements.
We have observed peaks above the lower critical field, Hc1, in the M-H curves from the multilayers.
Previous works with a model calculation of minimizing Gibbs free energy have s…
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We present the studies of non-uniformly distributed vortices in Nb/Al multilayers at applied field near parallel to film surface by using spin-polarized neutron reflectivity (SPNR) and DC magnetization measurements.
We have observed peaks above the lower critical field, Hc1, in the M-H curves from the multilayers.
Previous works with a model calculation of minimizing Gibbs free energy have suggested that the peaks could be ascribed to vortex line transitions for spatial commensuration in a thin film superconductor. In order to directly determine the distribution of vortices, we performed SPNR measurements on the multilayer and found that the distribution and density of vortices are different at ascending and descending fields. At ascending 2000 Oe which is just below the first peak in the M-H curve, SPNR shows that vortices are mostly localized near a middle line of the film meanwhile the vortices are distributed in broader region at the descending 2000 Oe. That is related to the observation of more vortices trapped at the descending field. As the applied field is sightly tilted (< 3.5degree), we observe another peak at a smaller field. The peak position is consistent with the parallel lower critical field (Hc1||). We discuss that the vortices run along the applied field below Hc1|| and rotate parallel to the surface at Hc1||.
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Submitted 23 August, 2001;
originally announced August 2001.
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Orientation of Vortices in a Superconducting Thin-Film: Quantitative Comparison of Spin-Polarized Neutron Reflectivity and Magnetization
Authors:
S. -W. Han,
J. Farmer,
H. Kaiser,
P. F. Miceli,
I. V. Roshchin,
L. H. Greene
Abstract:
We present a quantitative comparison of the magnetization measured by spin-polarized neutron reflectivity (SPNR) and DC magnetometry on a 1370 Å -thick Nb superconducting film. As a function of magnetic field applied in the film plane, SPNR exhibits reversible behavior whereas the DC magnetization shows substantial hysteresis. The difference between these measurements is attributed to a rotation…
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We present a quantitative comparison of the magnetization measured by spin-polarized neutron reflectivity (SPNR) and DC magnetometry on a 1370 Å -thick Nb superconducting film. As a function of magnetic field applied in the film plane, SPNR exhibits reversible behavior whereas the DC magnetization shows substantial hysteresis. The difference between these measurements is attributed to a rotation of vortex magnetic field out of the film plane as the applied field is reduced. Since SPNR measures only the magnetization parallel to the film plane whereas DC magnetization is strongly influenced by the perpendicular component of magnetization when there is a slight sample tilt, combining the two techniques allows one to distinguish two components of magnetization in a thin film.
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Submitted 17 August, 2000; v1 submitted 16 August, 2000;
originally announced August 2000.