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Inverse Low Gain Avalanche Detectors (iLGADs) for precise tracking and timing applications
Authors:
E. Currás,
M. Carulla,
M. Centis Vignali,
J. Duarte-Campderros,
M. Fernández,
D. Flores,
A. García,
G. Gómez,
J. González,
S. Hidalgo,
R. Jaramillo,
A. Merlos,
M. Moll,
G. Pellegrini,
D. Quirion,
I. Vila
Abstract:
Low Gain Avalanche Detector (LGAD) is the baseline sensing technology of the recently proposed Minimum Ionizing Particle (MIP) end-cap timing detectors (MTD) at the Atlas and CMS experiments. The current MTD sensor is designed as a multi-pad matrix detector delivering a poor position resolution, due to the relatively large pad area, around 1 $mm^2$; and a good timing resolution, around 20-30 ps. B…
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Low Gain Avalanche Detector (LGAD) is the baseline sensing technology of the recently proposed Minimum Ionizing Particle (MIP) end-cap timing detectors (MTD) at the Atlas and CMS experiments. The current MTD sensor is designed as a multi-pad matrix detector delivering a poor position resolution, due to the relatively large pad area, around 1 $mm^2$; and a good timing resolution, around 20-30 ps. Besides, in his current technological incarnation, the timing resolution of the MTD LGAD sensors is severely degraded once the MIP particle hits the inter-pad region since the signal amplification is missing for this region. This limitation is named as the LGAD fill-factor problem. To overcome the fill factor problem and the poor position resolution of the MTD LGAD sensors, a p-in-p LGAD (iLGAD) was introduced. Contrary to the conventional LGAD, the iLGAD has a non-segmented deep p-well (the multiplication layer). Therefore, iLGADs should ideally present a constant gain value over all the sensitive region of the device without gain drops between the signal collecting electrodes; in other words, iLGADs should have a 100${\%}$ fill-factor by design. In this paper, tracking and timing performance of the first iLGAD prototypes is presented.
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Submitted 3 April, 2019;
originally announced April 2019.
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Beam test measurements of Low Gain Avalanche Detector single pads and arrays for the ATLAS High Granularity Timing Detector
Authors:
C. Allaire,
J. Benitez,
M. Bomben,
G. Calderini,
M. Carulla,
E. Cavallaro,
A. Falou,
D. Flores,
P. Freeman,
Z. Galloway,
E. L. Gkougkousis,
H. Grabas,
S. Grinstein,
B. Gruey,
S. Guindon,
A. M. Henriques Correia,
S. Hidalgo,
A. Kastanas,
C. Labitan,
D. Lacour,
J. Lange,
F. Lanni,
B. Lenzi,
Z. Luce,
N. Makovec
, et al. (19 additional authors not shown)
Abstract:
For the high luminosity upgrade of the LHC at CERN, ATLAS is considering the addition of a High Granularity Timing Detector (HGTD) in front of the end cap and forward calorimeters at |z| = 3.5 m and covering the region 2.4 < |η| < 4 to help reducing the effect of pile-up. The chosen sensors are arrays of 50 μm thin Low Gain Avalanche Detectors (LGAD). This paper presents results on single LGAD sen…
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For the high luminosity upgrade of the LHC at CERN, ATLAS is considering the addition of a High Granularity Timing Detector (HGTD) in front of the end cap and forward calorimeters at |z| = 3.5 m and covering the region 2.4 < |η| < 4 to help reducing the effect of pile-up. The chosen sensors are arrays of 50 μm thin Low Gain Avalanche Detectors (LGAD). This paper presents results on single LGAD sensors with a surface area of 1.3x1.3 mm2 and arrays with 2x2 pads with a surface area of 2x2 mm^2 or 3x3 mm^2 each and different implant doses of the p+ multiplication layer. They are obtained from data collected during a beam test campaign in Autumn 2016 with a pion beam of 120 GeV energy at the CERN SPS. In addition to several quantities measured inclusively for each pad, the gain, efficiency and time resolution have been estimated as a function of the position of the incident particle inside the pad by using a beam telescope with a position resolution of few μm. Different methods to measure the time resolution are compared, yielding consistent results. The sensors with a surface area of 1.3x1.3 mm^2 have a time resolution of about 40 ps for a gain of 20 and of about 27 ps for a gain of 50 and fulfill the HGTD requirements. Larger sensors have, as expected, a degraded time resolution. All sensors show very good efficiency and time resolution uniformity.
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Submitted 9 August, 2018; v1 submitted 2 April, 2018;
originally announced April 2018.
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Radiation Hardness of Thin Low Gain Avalanche Detectors
Authors:
G. Kramberger,
M. Carulla,
E. Cavallaro,
V. Cindro,
D. Flores,
Z. Galloway,
S. Grinstein,
S. Hidalgo,
V. Fadeyev,
J. Lange,
I. Mandic,
G. Medin,
A. Merlos,
F. McKinney-Martinez,
M. Mikuz,
D. Quirion,
G. Pellegrini,
M. Petek,
H. F-W. Sadrozinski,
A. Seiden,
M. Zavrtanik
Abstract:
Low Gain Avalanche Detectors (LGAD) are based on a n++-p+-p-p++ structure where an appropriate doping of the multiplication layer (p+) leads to high enough electric fields for impact ionization. Gain factors of few tens in charge significantly improve the resolution of timing measurements, particularly for thin detectors, where the timing performance was shown to be limited by Landau fluctuations.…
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Low Gain Avalanche Detectors (LGAD) are based on a n++-p+-p-p++ structure where an appropriate doping of the multiplication layer (p+) leads to high enough electric fields for impact ionization. Gain factors of few tens in charge significantly improve the resolution of timing measurements, particularly for thin detectors, where the timing performance was shown to be limited by Landau fluctuations. The main obstacle for their operation is the decrease of gain with irradiation, attributed to effective acceptor removal in the gain layer. Sets of thin sensors were produced by two different producers on different substrates, with different gain layer doping profiles and thicknesses (45, 50 and 80 um). Their performance in terms of gain/collected charge and leakage current was compared before and after irradiation with neutrons and pions up to the equivalent fluences of 5e15 cm-2. Transient Current Technique and charge collection measurements with LHC speed electronics were employed to characterize the detectors. The thin LGAD sensors were shown to perform much better than sensors of standard thickness (~300 um) and offer larger charge collection with respect to detectors without gain layer for fluences <2e15 cm-2. Larger initial gain prolongs the beneficial performance of LGADs. Pions were found to be more damaging than neutrons at the same equivalent fluence, while no significant difference was found between different producers. At very high fluences and bias voltages the gain appears due to deep acceptors in the bulk, hence also in thin standard detectors.
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Submitted 16 November, 2017;
originally announced November 2017.
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Gain and time resolution of 45 $μ$m thin Low Gain Avalanche Detectors before and after irradiation up to a fluence of $10^{15}$ n$_{eq}$/cm$^2$
Authors:
J. Lange,
M. Carulla,
E. Cavallaro,
L. Chytka,
P. M. Davis,
D. Flores,
F. Förster,
S. Grinstein,
S. Hidalgo,
T. Komarek,
G. Kramberger,
I. Mandić,
A. Merlos,
L. Nozka,
G. Pellegrini,
D. Quirion,
T. Sykora
Abstract:
Low Gain Avalanche Detectors (LGADs) are silicon sensors with a built-in charge multiplication layer providing a gain of typically 10 to 50. Due to the combination of high signal-to-noise ratio and short rise time, thin LGADs provide good time resolutions.
LGADs with an active thickness of about 45 $μ$m were produced at CNM Barcelona. Their gains and time resolutions were studied in beam tests f…
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Low Gain Avalanche Detectors (LGADs) are silicon sensors with a built-in charge multiplication layer providing a gain of typically 10 to 50. Due to the combination of high signal-to-noise ratio and short rise time, thin LGADs provide good time resolutions.
LGADs with an active thickness of about 45 $μ$m were produced at CNM Barcelona. Their gains and time resolutions were studied in beam tests for two different multiplication layer implantation doses, as well as before and after irradiation with neutrons up to $10^{15}$ n$_{eq}$/cm$^2$.
The gain showed the expected decrease at a fixed voltage for a lower initial implantation dose, as well as for a higher fluence due to effective acceptor removal in the multiplication layer. Time resolutions below 30 ps were obtained at the highest applied voltages for both implantation doses before irradiation. Also after an intermediate fluence of $3\times10^{14}$ n$_{eq}$/cm$^2$, similar values were measured since a higher applicable reverse bias voltage could recover most of the pre-irradiation gain. At $10^{15}$ n$_{eq}$/cm$^2$, the time resolution at the maximum applicable voltage of 620 V during the beam test was measured to be 57 ps since the voltage stability was not good enough to compensate for the gain layer loss. The time resolutions were found to follow approximately a universal function of gain for all implantation doses and fluences.
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Submitted 6 May, 2017; v1 submitted 27 March, 2017;
originally announced March 2017.
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Beam test results of a 16 ps timing system based on ultra-fast silicon detectors
Authors:
N. Cartiglia,
A. Staiano,
V. Sola,
R. Arcidiacono,
R. Cirio,
F. Cenna,
M. Ferrero,
V. Monaco,
R. Mulargia,
M. Obertino,
F. Ravera,
R. Sacchi,
A. Bellora,
S. Durando,
M. Mandurrino,
N. Minafra,
V. Fadeyev,
P. Freeman,
Z. Galloway,
E. Gkougkousis,
H. Grabas,
B. Gruey,
C. A. Labitan,
R. Losakul,
Z. Luce
, et al. (18 additional authors not shown)
Abstract:
In this paper we report on the timing resolution of the first production of 50 micro-meter thick Ultra-Fast Silicon Detectors (UFSD) as obtained in a beam test with pions of 180 GeV/c momentum. UFSD are based on the Low-Gain Avalanche Detectors (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below th…
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In this paper we report on the timing resolution of the first production of 50 micro-meter thick Ultra-Fast Silicon Detectors (UFSD) as obtained in a beam test with pions of 180 GeV/c momentum. UFSD are based on the Low-Gain Avalanche Detectors (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. The UFSD used in this test belongs to the first production of thin (50 μm) sensors, with an pad area of 1.4 mm2. The gain was measured to vary between 5 and 70 depending on the bias voltage. The experimental setup included three UFSD and a fast trigger consisting of a quartz bar readout by a SiPM. The timing resolution, determined comparing the time of arrival of the particle in one or more UFSD and the trigger counter, for single UFSD was measured to be 35 ps for a bias voltage of 200 V, and 26 ps for a bias voltage of 240 V, and for the combination of 3 UFSD to be 20 ps for a bias voltage of 200 V, and 15 ps for a bias voltage of 240 V.
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Submitted 3 January, 2017; v1 submitted 30 August, 2016;
originally announced August 2016.
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Recent Technological Developments on LGAD and iLGAD Detectors for Tracking and Timing Applications
Authors:
G. Pellegrini,
M. Baselga,
M. Carulla,
V. Fadeyev,
P. Fernandez-Martinez,
M. Fernandez-Garcia,
D. Flores,
Z. Galloway,
C. Gallrapp,
S. Hidalgo,
Z. Liang,
A. Merlos,
M. Moll,
D. Quirion,
H. Sadrozinski,
M. Stricker,
I. Vila
Abstract:
This paper reports the last technological development on the Low Gain Avalanche Detector (LGAD) and introduces a new architecture of these detectors called inverse-LGAD (iLGAD). Both approaches are based on the standard Avalanche Photo Diodes (APD) concept, commonly used in optical and X-ray detection applications, including an internal multiplication of the charge generated by radiation. The mult…
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This paper reports the last technological development on the Low Gain Avalanche Detector (LGAD) and introduces a new architecture of these detectors called inverse-LGAD (iLGAD). Both approaches are based on the standard Avalanche Photo Diodes (APD) concept, commonly used in optical and X-ray detection applications, including an internal multiplication of the charge generated by radiation. The multiplication is inherent to the basic n++-p+-p structure, where the doping profile of the p+ layer is optimized to achieve high field and high impact ionization at the junction. The LGAD structures are optimized for applications such as tracking or timing detectors for high energy physics experiments or medical applications where time resolution lower than 30 ps is required. Detailed TCAD device simulations together with the electrical and charge collection measurements are presented through this work.
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Submitted 23 November, 2015;
originally announced November 2015.
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Design and Fabrication of an Optimum Peripheral Region for Low Gain Avalanche Detectors
Authors:
Pablo Fernandez-Martinez,
David Flores,
Salvador Hidalgo,
Virginia Greco,
Angel Merlos,
Giulio Pellegrini,
David Quirion
Abstract:
Low Gain Avalanche Detectors (LGAD) represent a remarkable advance in high energy particle detection, since they provide a moderate increase (gain ~10) of the collected charge, thus leading to a notable improvement of the signal-to-noise ratio, which largely extends the possible application of Silicon detectors beyond their present working field. The optimum detection performance requires a carefu…
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Low Gain Avalanche Detectors (LGAD) represent a remarkable advance in high energy particle detection, since they provide a moderate increase (gain ~10) of the collected charge, thus leading to a notable improvement of the signal-to-noise ratio, which largely extends the possible application of Silicon detectors beyond their present working field. The optimum detection performance requires a careful implementation of the multiplication junction, in order to obtain the desired gain on the read out signal, but also a proper design of the edge termination and the peripheral region, which prevents the LGAD detectors from premature breakdown and large leakage current. This work deals with the critical technological aspects when optimising the LGAD structure. The impact of several design strategies for the device periphery is evaluated with the aid of TCAD simulations, and compared with the experimental results obtained from the first LGAD prototypes fabricated at the IMB-CNM clean room. Solutions for the peripheral region improvement are also provided.
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Submitted 29 October, 2015;
originally announced October 2015.
