Spin Hall magnetoresistance in Pt/(Ga,Mn)N devices
Authors:
J. Aaron Mendoza-Rodarte,
Katarzyna Gas,
Manuel Herrera-Zaldívar,
Detlef Hommel,
Maciej Sawicki,
Marcos H. D. Guimarães
Abstract:
Diluted magnetic semiconductors (DMS) have attracted significant attention for their potential in spintronic applications. Particularly, magnetically-doped GaN is highly attractive due to its high relevance for the CMOS industry and the possibility of developing advanced spintronic devices which are fully compatible with the current industrial procedures. Despite this interest, there remains a nee…
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Diluted magnetic semiconductors (DMS) have attracted significant attention for their potential in spintronic applications. Particularly, magnetically-doped GaN is highly attractive due to its high relevance for the CMOS industry and the possibility of developing advanced spintronic devices which are fully compatible with the current industrial procedures. Despite this interest, there remains a need to investigate the spintronic parameters that characterize interfaces within these systems. Here, we perform spin Hall magnetoresistance (SMR) measurements to evaluate the spin transfer at a Pt/(Ga,Mn)N interface. We determine the transparency of the interface through the estimation of the real part of the spin mixing conductance finding $G_r = 2.6\times 10^{14} \, Ω^{-1} m^{-2}$, comparable to state-of-the-art yttrium iron garnet (YIG)/Pt interfaces. Moreover, the magnetic ordering probed by SMR above the (Ga,Mn)N Curie temperature TC provides a broader temperature range for the efficient generation and detection of spin currents, relaxing the conditions for this material to be applied in new spintronic devices.
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Submitted 11 October, 2024; v1 submitted 14 May, 2024;
originally announced May 2024.
Efficient Magnon Injection and Detection via the Orbital Rashba Edelstein Effect
Authors:
J. A. Mendoza-Rodarte,
M. Cosset-Chéneau,
B. J. van Wees,
M. H. D. Guimarães
Abstract:
Orbital currents and accumulation provide a new avenue to boost spintronic effects in nanodevices. Here we use interconversion effects between charge current and orbital angular momentum to demonstrate a dramatic increase in the magnon spin injection and detection efficiencies in nanodevices consisting of a magnetic insulator contacted by Pt/CuOx electrodes. Moreover, we note distinct variations i…
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Orbital currents and accumulation provide a new avenue to boost spintronic effects in nanodevices. Here we use interconversion effects between charge current and orbital angular momentum to demonstrate a dramatic increase in the magnon spin injection and detection efficiencies in nanodevices consisting of a magnetic insulator contacted by Pt/CuOx electrodes. Moreover, we note distinct variations in efficiency for magnon spin injection and detection, indicating a disparity in the direct and inverse orbital Rashba Edelstein effect efficiencies.
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Submitted 2 January, 2024;
originally announced January 2024.
