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Quantum charge sensing using a semiconductor device based on $δ$-layer tunnel junctions
Authors:
Juan P. Mendez,
Denis Mamaluy
Abstract:
We report a nanoscale device concept based on a highly doped $δ$-layer tunnel junction embedded in a semiconductor for charge sensing. Recent advances in Atomic Precision Advanced Manufacturing (APAM) processes have enabled the fabrication of devices based on quasi-2D, highly conductive, highly doped regions, known as $δ$-layers, in semiconductor materials. In this work, we demonstrate that APAM…
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We report a nanoscale device concept based on a highly doped $δ$-layer tunnel junction embedded in a semiconductor for charge sensing. Recent advances in Atomic Precision Advanced Manufacturing (APAM) processes have enabled the fabrication of devices based on quasi-2D, highly conductive, highly doped regions, known as $δ$-layers, in semiconductor materials. In this work, we demonstrate that APAM $δ$-layer tunnel junctions are ultrasensitive to the presence of charges near the tunnel junction, allowing the use of these devices for detecting charges by observing changes in the electrical current. We demonstrate that these devices can enhance the sensitivity in the limit, i.e., for small concentrations of charges, exhibiting significantly superior sensitivity compared to traditional FET-based sensors. We also propose that the extreme sensitivity arises from the strong quantization of the conduction band in these highly-confined systems.
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Submitted 14 May, 2025; v1 submitted 17 December, 2024;
originally announced December 2024.
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Exploring transport mechanisms in atomic precision advanced manufacturing enabled pn junctions
Authors:
Juan P. Mendez,
Xujiao Gao,
Jeffrey Ivie,
James H. G. Owen,
Wiley P. Kirk,
John N. Randall,
Shashank Misra
Abstract:
We investigate the different transport mechanisms that can occur in pn junction devices made using atomic precision advanced manufacturing (APAM) at temperatures ranging from cryogenic to room temperature. We first elucidate the potential cause of the anomalous behavior observed in the forward-bias response of these devices in recent cryogenic temperature measurements, which deviates from the theo…
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We investigate the different transport mechanisms that can occur in pn junction devices made using atomic precision advanced manufacturing (APAM) at temperatures ranging from cryogenic to room temperature. We first elucidate the potential cause of the anomalous behavior observed in the forward-bias response of these devices in recent cryogenic temperature measurements, which deviates from the theoretical response of a silicon Esaki diode. These anomalous behaviors include current suppression at low voltages in the forward-bias response and a much lower valley voltage at cryogenic temperatures than theoretically expected for a silicon diode. To investigate the potential causes of these anomalies, we studied the effects of a few possible transport mechanisms, including band-to-band tunneling, band gap narrowing, potential impact of non-Ohmic contacts, band quantization, impact of leakage, and inelastic trap-assisted tunneling, through semi-classical simulations. We find that a combination of two sets of band-to-band tunneling (BTBT) parameters can qualitatively approximate the shape of the tunneling current at low bias. This can arise from band quantization and realignment due to the strong potential confinement in $δ$-layers. We also find that the lower-than-theoretically-expected valley voltage can be attributed to modifications in the electronic band structure within the $δ$-layer regions, leading to a significant band-gap narrowing induced by the high density of dopants. Finally, we extend our analyses to room temperature operation and predict that trap-assisted tunneling (TAT) facilitated by phonon interactions may become significant, leading to a complex superposition of BTBT and TAT transport mechanisms in the electrical measurements.
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Submitted 15 March, 2025; v1 submitted 22 October, 2024;
originally announced October 2024.
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Epitaxial aluminum layer on antimonide heterostructures for exploring Josephson junction effects
Authors:
W. Pan,
K. R. Sapkota,
P. Lu,
A. J. Muhowski,
W. M. Martinez,
C. L. H. Sovinec,
R. Reyna,
J. P. Mendez,
D. Mamaluy,
S. D. Hawkins,
J. F. Klem,
L. S. L. Smith,
D. A. Temple,
Z. Enderson,
Z. Jiang,
E. Rossi
Abstract:
In this article, we present results of our recent work of epitaxially-grown aluminum (epi-Al) on antimonide heterostructures, where the epi-Al thin film is grown at either room temperature or below zero $^o$C. A sharp superconducting transition at $T \sim 1.3$ K is observed in these epi-Al films. We further show that supercurrent states are realized in Josephson junctions fabricated in the epi-Al/…
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In this article, we present results of our recent work of epitaxially-grown aluminum (epi-Al) on antimonide heterostructures, where the epi-Al thin film is grown at either room temperature or below zero $^o$C. A sharp superconducting transition at $T \sim 1.3$ K is observed in these epi-Al films. We further show that supercurrent states are realized in Josephson junctions fabricated in the epi-Al/antimonide heterostructures with mobility $μ\sim 1.0 \times 10^6$ cm$^2$/Vs. These results clearly demonstrate we have achieved growing high-quality epi-Al/antimonide heterostructures, a promising platform for the exploration of Josephson junction effects for quantum information science and microelectronics applications.
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Submitted 17 April, 2025; v1 submitted 8 October, 2024;
originally announced October 2024.
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Quantum Enhanced Josephson Junction Field-Effect Transistors for Logic Applications
Authors:
W. Pan,
A. J. Muhowski,
W. M. Martinez,
C. L. H. Sovinec,
J. P. Mendez,
D. Mamaluy,
W. Yu,
X. Shi,
K. Sapkota,
S. D. Hawkins,
J. F. Klem
Abstract:
Josephson junction field-effect transistors (JJFETs) have recently re-emerged as promising candidates for superconducting computing. For JJFETs to perform Boolean logic operations, the so-called gain factor $α_{R}$ must be larger than 1. In a conventional JJFET made with a classical channel material, due to a gradual dependence of superconducting critical current on the gate bias, $α_{R}$ is much…
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Josephson junction field-effect transistors (JJFETs) have recently re-emerged as promising candidates for superconducting computing. For JJFETs to perform Boolean logic operations, the so-called gain factor $α_{R}$ must be larger than 1. In a conventional JJFET made with a classical channel material, due to a gradual dependence of superconducting critical current on the gate bias, $α_{R}$ is much smaller than 1. In this Letter, we propose a new device structure of quantum enhanced JJFETs in a zero-energy-gap InAs/GaSb heterostructure. We demonstrate that, due to an excitonic insulator quantum phase transition in this zero-gap heterostructure, the superconducting critical current displays a sharp transition as a function of gate bias, and the deduced gain factor $α_{R}$ ~ 0.06 is more than 50 times that (~ 0.001) reported in a classical JJFET. Further optimization may allow achieving a gain factor larger than 1 for logic applications.
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Submitted 27 September, 2024;
originally announced September 2024.
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Uncovering anisotropic effects of electric high-moment dipoles on the tunneling current in $δ$-layer tunnel junctions
Authors:
Juan P. Mendez,
Denis Mamaluy
Abstract:
The precise positioning of dopants in semiconductors using scanning tunneling microscopes has led to the development of planar dopant-based devices, also known as $δ$-layers, facilitating the exploration of new concepts in classical and quantum computing. Recently it have been shown that two distinct conductivity regimes (low- and high- bias regimes) exist in $δ$-layer tunnel junctions due to the…
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The precise positioning of dopants in semiconductors using scanning tunneling microscopes has led to the development of planar dopant-based devices, also known as $δ$-layers, facilitating the exploration of new concepts in classical and quantum computing. Recently it have been shown that two distinct conductivity regimes (low- and high- bias regimes) exist in $δ$-layer tunnel junctions due to the presence of quasi-discrete and continuous states in the conduction band of $δ$-layer systems. Furthermore, discrete charged impurities in the tunnel junction region significantly influence the tunneling rates in $δ$-layer tunnel junctions. Here we demonstrate that zero-charge impurities, or electrical dipoles, present in the tunnel junction region can also significantly alter the tunneling rate, depending, however, on the specific conductivity regime and orientation and moment of the dipole. In the low-bias regime with high-resistance tunneling mode dipole impurities of nearly all orientations and moments can alter the current, indicating the extreme sensitivity of the tunnel current to the slightest imperfection in the tunnel gap. In the high-bias regime with low-resistivity only dipole defects with high moment and orientated in the direction perpendicular to the electron tunneling direction can significantly affect the current, thus making this conductivity regime significantly less prone to the influence of dipole defects with low-moment or dipoles oriented along the propagation direction.
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Submitted 18 December, 2023; v1 submitted 10 October, 2023;
originally announced October 2023.
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A Feasible Hybrid Quantum-Assisted Digital Signature for Arbitrary Message Length
Authors:
Marta Irene García Cid,
Laura Ortiz Martín,
David Domingo Martín,
Rodrigo Martín Sánchez-Ledesma,
Juan Pedro Brito Méndez,
Vicente Martín Ayuso
Abstract:
Currently used digital signatures based on asymmetric cryptography will be vulnerable to quantum computers running Shor's algorithm. In this work, we propose a new quantum-assisted digital signature protocol based on symmetric keys generated by QKD, that allows signing and verifying messages in a simple way implementing an integration of currently available classical and quantum technologies. The…
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Currently used digital signatures based on asymmetric cryptography will be vulnerable to quantum computers running Shor's algorithm. In this work, we propose a new quantum-assisted digital signature protocol based on symmetric keys generated by QKD, that allows signing and verifying messages in a simple way implementing an integration of currently available classical and quantum technologies. The protocol is described for a three-user scenario composed of one sender and two receivers. In contrast to previous schemes, it is independent of the message length. The security of the protocol has been analyzed, as well as its integrity, authenticity and non-repudiation properties.
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Submitted 1 March, 2023;
originally announced March 2023.
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Strong Quantization of Current-carrying Electron States in $δ$-layer Systems
Authors:
Denis Mamaluy,
Juan P. Mendez
Abstract:
We present an open-system quantum-mechanical real-space study of the conductive properties and size quantization in phosphorus $δ$-layers systems, interesting for their beyond-Moore and quantum computing applications. Recently it has been demonstrated that an open-system quantum mechanical treatment provides a much more accurate match to ARPES measurements in highly-conductive, highly-confined sys…
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We present an open-system quantum-mechanical real-space study of the conductive properties and size quantization in phosphorus $δ$-layers systems, interesting for their beyond-Moore and quantum computing applications. Recently it has been demonstrated that an open-system quantum mechanical treatment provides a much more accurate match to ARPES measurements in highly-conductive, highly-confined systems than the traditional approaches (i.e. periodic or Dirichlet boundary conditions) and, furthermore, it allows accurate predictions of conductive properties of such systems from the first principles. Here we reveal that quantization effects are strong for device widths $W<10$~nm, and we show, for the first time, that the number of propagating modes determines not only the conductivity, but the distinctive spatial distribution of the current-carrying electron states. For $W>10$~nm, the quantization effects practically vanish and the conductivity tends to the infinitely-wide device's values.
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Submitted 10 November, 2022;
originally announced November 2022.
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Influence of imperfections on tunneling rate in $δ$-layer junctions
Authors:
Juan P. Mendez,
Shashank Misra,
Denis Mamaluy
Abstract:
The atomically precise placement of dopants in semiconductors using scanning tunneling microscopes has been used to create planar dopant-based devices, enabling the exploration of novel classical or quantum computing concepts, which often require precise control over tunneling rates in their operation. While the geometry of the dopants can be defined to sub-nanometer precision, imperfections can s…
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The atomically precise placement of dopants in semiconductors using scanning tunneling microscopes has been used to create planar dopant-based devices, enabling the exploration of novel classical or quantum computing concepts, which often require precise control over tunneling rates in their operation. While the geometry of the dopants can be defined to sub-nanometer precision, imperfections can still play a significant role in determining the tunneling rates. Here, we investigate the influence of different imperfections in phosphorous $δ$-layer tunnel junctions in silicon: variations of $δ$-layer thickness and tunnel gap width, interface roughness, and charged impurities. It is found that while most of the imperfections moderately affect the tunneling rate, a single charged impurity in the tunnel gap can alter the tunneling rate by more than an order of magnitude, even for relatively large tunnel gaps. Moreover, it is also revealed that the tunneling rate strongly depends on the electrical charge sign of the impurity.
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Submitted 5 October, 2023; v1 submitted 22 September, 2022;
originally announced September 2022.
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Conductivity and size quantization effects in semiconductor $δ$-layer systems
Authors:
Juan P. Mendez,
Denis Mamaluy
Abstract:
We present an open-system quantum-mechanical 3D real-space study of the conduction band structure and conductive properties of two semiconductor systems, interesting for their beyond-Moore and quantum computing applications: phosphorus $δ$-layers in silicon and the corresponding $δ$-layer tunnel junctions. In order to evaluate size quantization effects on the conductivity, we consider two principa…
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We present an open-system quantum-mechanical 3D real-space study of the conduction band structure and conductive properties of two semiconductor systems, interesting for their beyond-Moore and quantum computing applications: phosphorus $δ$-layers in silicon and the corresponding $δ$-layer tunnel junctions. In order to evaluate size quantization effects on the conductivity, we consider two principal cases: nanoscale finite-width structures, used in transistors, and infinitely-wide structures, electrical properties of which are typically known experimentally. For devices widths $W<10$~nm, quantization effects are strong and it is shown that the number of propagating modes determines not only the conductivity, but the distinctive spatial distribution of the current-carrying electron states. For $W>10$~nm, the quantization effects practically vanish and the conductivity tends to the infinitely-wide device values. For tunnel junctions, two distinct conductivity regimes are predicted due to the strong conduction band quantization.
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Submitted 22 September, 2022; v1 submitted 14 September, 2022;
originally announced September 2022.
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MXE: A package for simulating long-term diffusive mass transport phenomena in nanoscale systems
Authors:
Juan Pedro Mendez,
Mauricio Ponga
Abstract:
We present a package to simulate long-term diffusive mass transport in systems with atomic scale resolution. The implemented framework is based on a non-equilibrium statistical thermo-chemo-mechanical formulation of atomic systems where effective transport rates are computed by using kinematic diffusion laws. Our implementation is built as an add-on to the Large-scale Atomic/Molecular Massively Pa…
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We present a package to simulate long-term diffusive mass transport in systems with atomic scale resolution. The implemented framework is based on a non-equilibrium statistical thermo-chemo-mechanical formulation of atomic systems where effective transport rates are computed by using kinematic diffusion laws. Our implementation is built as an add-on to the Large-scale Atomic/Molecular Massively Parallel Simulator (LAMMPS) code. It is compatible with other LAMMPS' functionalities, and shows a good parallel scalability and efficiency. In applications involving mass transport, our framework is able to simulate problems of technological interest for exceedingly large time scales using an atomistic description, which are not reachable with the \emph{state-of-the-art} molecular dynamics techniques. To validate the implementation, we investigated vacancy diffusion, vacancy assisted dislocation climb in metals at high-temperatures, segregation of solutes in free surfaces, diffusion of solutes to grain boundaries, and Hydrogen diffusion in Palladium nanowires. These examples were validated against known theories, methodologies or experimental results when possible, showing good agreement in all cases.
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Submitted 2 October, 2019;
originally announced October 2019.
