Showing 1–49 of 49 results for author: Meinert, M

Enhanced THz emission from spintronic emitters with Pt-Al alloys

Authors: Felix Janus, Nicolas Beermann, Jyoti Yadav, Reshma Rajeev Lekha, Wentao Zhang, Hassan A. Hafez, Dmitry Turchinovich, Markus Meinert

Abstract: Platinum (Pt) is the element with the largest spin Hall conductivity and is known as the most efficient spin-to-charge conversion material in spintronic THz emitters. By alloying with aluminum (Al), its resistivity can be substantially increased, exceeding $100\,μΩ$cm. While the spin Hall conductivity is reduced by alloying, the relative resistivity increase surpasses the reduction of spin Hall co… ▽ More Platinum (Pt) is the element with the largest spin Hall conductivity and is known as the most efficient spin-to-charge conversion material in spintronic THz emitters. By alloying with aluminum (Al), its resistivity can be substantially increased, exceeding $100\,μΩ$cm. While the spin Hall conductivity is reduced by alloying, the relative resistivity increase surpasses the reduction of spin Hall conductivity and thereby enhances the spin Hall angle. We make use of this mechanism to improve the commonly used Pt-based spintronic THz emitter and demonstrate that an increase of 67% in the THz emission amplitude can be achieved between 20\% and 30\% Al in Pt. We show that the enhanced THz emission amplitude is driven by the enhanced multilayer impedance due to the larger resistivity. △ Less

Submitted 10 April, 2025; originally announced April 2025.

Comments: 4 pages, 3 figures

Emergent spin Hall conductivity in Tantalum-Rhenium alloys

Authors: Felix Janus, Jyoti Yadav, Nicolas Beermann, Wentao Zhang, Hassan A. Hafez, Dmitry Turchinovich, Sascha Preu, Markus Meinert

Abstract: We investigate the spin Hall conductivity (SHC) of a composition series of a Ta-Re bcc solid solution. At approximately 60 at.% Ta the Ta-Re alloy features an SHC similar to bcc-W, while both endpoints of the compositional series have rather moderate SHC. The intermediate stoichiometries exhibit a substantial enhancement due to Fermi level tuning through the same band structure feature which gives… ▽ More We investigate the spin Hall conductivity (SHC) of a composition series of a Ta-Re bcc solid solution. At approximately 60 at.% Ta the Ta-Re alloy features an SHC similar to bcc-W, while both endpoints of the compositional series have rather moderate SHC. The intermediate stoichiometries exhibit a substantial enhancement due to Fermi level tuning through the same band structure feature which gives bcc-W and $β$-W its large SHC. We provide experimental evidence for the enhancement of the SHC in the alloy via THz emission upon ultrafast laser excitation of Ta-Re/CoFeB bilayers. We demonstrate that a rigid band model derived from bcc-W and Fermi level tuning describes the experimental data with a similar accuracy as coherent potential approximation alloy calculations of the SHC. △ Less

Submitted 23 January, 2025; originally announced January 2025.

Comments: 8 pages, 5 figures

Journal ref: Phys. Rev. B 111, 174411 (2025)

Efficient Spintronic THz Emitters Without External Magnetic Field

Authors: Amir Khan, Nicolas Sylvester Beermann, Shalini Sharma, Tiago de Oliveira Schneider, Wentao Zhang, Dmitry Turchinovich, Markus Meinert

Abstract: We investigate the performance of state-of-the-art spintronic THz emitters (W or Ta)/CoFeB/Pt with non-magnetic underlayer deposited using oblique angle deposition. The THz emission amplitude in the presence or absence of an external magnetic field remains the same and remarkably stable over time. This stability is attributed to the enhanced uniaxial magnetic anisotropy in the ferromagnetic layer,… ▽ More We investigate the performance of state-of-the-art spintronic THz emitters (W or Ta)/CoFeB/Pt with non-magnetic underlayer deposited using oblique angle deposition. The THz emission amplitude in the presence or absence of an external magnetic field remains the same and remarkably stable over time. This stability is attributed to the enhanced uniaxial magnetic anisotropy in the ferromagnetic layer, achieved by oblique angle deposition of the underlying non-magnetic layer. Our findings could be used for the development of practical field-free emitters of linearly polarized THz radiation, potentially enabling novel applications in future THz technologies. △ Less

Submitted 7 November, 2024; originally announced November 2024.

Comments: 6 pages including references and 5 figures

OpenFMR: A low-cost open-source broadband ferromagnetic resonance spectrometer

Authors: Markus Meinert, Tiago de Oliveira Schneider, Shalini Sharma, Amir Khan

Abstract: We describe a broadband ferromagnetic resonance spectrometer for scientific and educational applications with a frequency range up to 30 GHz. It is built with low-cost components available off-the-shelf and utilizes 3D printed parts for sample holders and support structures, and requires little assembly. A PCB design for the grounded coplanar waveguide (GCPW) is presented and analysed. We further… ▽ More We describe a broadband ferromagnetic resonance spectrometer for scientific and educational applications with a frequency range up to 30 GHz. It is built with low-cost components available off-the-shelf and utilizes 3D printed parts for sample holders and support structures, and requires little assembly. A PCB design for the grounded coplanar waveguide (GCPW) is presented and analysed. We further include a software suite for command-line or script driven data acqusition, a graphical user interface, and a graphical data analysis program. The capabilities of the system design are demonstrated with measurements on ferromagnetic thin films with a thickness of 1 nm. All designs and scripts are published under the GNU GPL v3.0 license. △ Less

Submitted 24 September, 2024; originally announced September 2024.

Comments: 7 pages, 7 figures

Journal ref: Rev. Sci. Instrum. 96, 033901 (2025)

High-throughput techniques for measuring the spin Hall effect

Authors: Markus Meinert, Björn Gliniors, Oliver Gueckstock, Tom S. Seifert, Lukas Liensberger, Mathias Weiler, Sebastian Wimmer, Hubert Ebert, Tobias Kampfrath

Abstract: The spin Hall effect in heavy-metal thin films is routinely employed to convert charge currents into transverse spin currents and can be used to exert torque on adjacent ferromagnets. Conversely, the inverse spin Hall effect is frequently used to detect spin currents by charge currents in spintronic devices up to the terahertz frequency range. Numerous techniques to measure the spin Hall effect or… ▽ More The spin Hall effect in heavy-metal thin films is routinely employed to convert charge currents into transverse spin currents and can be used to exert torque on adjacent ferromagnets. Conversely, the inverse spin Hall effect is frequently used to detect spin currents by charge currents in spintronic devices up to the terahertz frequency range. Numerous techniques to measure the spin Hall effect or its inverse were introduced, most of which require extensive sample preparation by multi-step lithography. To enable rapid screening of materials in terms of charge-to-spin conversion, suitable high-throughput methods for measuring the spin Hall angle are required. Here, we compare two lithography-free techniques, terahertz emission spectroscopy and broadband ferromagnetic resonance, to standard harmonic Hall measurements and theoretical predictions using the binary-alloy series Au$_x$Pt$_{1-x}$ as benchmark system. Despite being highly complementary, we find that all three techniques yield a spin Hall angle with approximately the same $x$~dependence, which is also consistent with first-principles calculations. Quantitative discrepancies are discussed in terms of magnetization orientation and interfacial spin-memory loss. △ Less

Submitted 7 October, 2020; originally announced October 2020.

Comments: 9 pages, 3 figures

Approximation of partial differential equations on compact resistance spaces

Authors: Michael Hinz, Melissa Meinert

Abstract: We consider linear partial differential equations on resistance spaces that are uniformly elliptic and parabolic in the sense of quadratic forms and involve abstract gradient and divergence terms. Our main interest is to provide graph and metric graph approximations for their unique solutions. For families of equations with different coefficients on a single compact resistance space we prove that… ▽ More We consider linear partial differential equations on resistance spaces that are uniformly elliptic and parabolic in the sense of quadratic forms and involve abstract gradient and divergence terms. Our main interest is to provide graph and metric graph approximations for their unique solutions. For families of equations with different coefficients on a single compact resistance space we prove that solutions have accumulation points with respect to the uniform convergence in space, provided that the coefficients remain bounded. If in a sequence of equations the coefficients converge suitably, the solutions converge uniformly along a subsequence. For the special case of local resistance forms on finitely ramified sets we also consider sequences of resistance spaces approximating the finitely ramified set from within. Under suitable assumptions on the coefficients (extensions of) linearizations of the solutions of equations on the approximating spaces accumulate or even converge uniformly along a subsequence to the solution of the target equation on the finitely ramified set. The results cover discrete and metric graph approximations, and both are discussed. △ Less

Submitted 12 September, 2020; v1 submitted 6 July, 2020; originally announced July 2020.

MSC Class: 28A80; 35H99; 35J20; 35K10; 35R02; 47A07

Improving thermal stability of MnN/CoFeB exchange bias systems by optimizing the Ta buffer layer

Authors: Mareike Dunz, Markus Meinert

Abstract: We investigated the influence of the Ta buffer layer on the thermal stability of polycrystalline Ta/ MnN/ CoFeB exchange bias systems, showing high exchange bias of about 1800 Oe at room temperature. The thermal stability of those trilayer systems is limited by nitrogen diffusion that occurs during annealing processes. Most of the nitrogen diffuses into the Ta buffer layer, which is necessary for… ▽ More We investigated the influence of the Ta buffer layer on the thermal stability of polycrystalline Ta/ MnN/ CoFeB exchange bias systems, showing high exchange bias of about 1800 Oe at room temperature. The thermal stability of those trilayer systems is limited by nitrogen diffusion that occurs during annealing processes. Most of the nitrogen diffuses into the Ta buffer layer, which is necessary for good crystal growth of MnN and thus a crucial component of the exchange bias system. In order to improve the thermal stability, we prepared exchange bias stacks where we varied the Ta thickness to look for an optimum value that guarantees stable and high exchange over a broad temperature range. Our findings show that thin layers of 2-5 nm Ta indeed support stable exchange bias up to annealing temperatures of more than $550^{\circ}$C. Furthermore, we found that the introduction of a TaN$_{\text{x}}$ layer between MnN and Ta, acting as a barrier, can prevent nitrogen diffusion. However, our results show that those measures, even though being beneficial in terms of thermal stability, often lead to decreased crystallinity and thus lower the exchange bias. △ Less

Submitted 11 May, 2020; originally announced May 2020.

Ultra-low switching current density in all-amorphous W-Hf / CoFeB / TaOx films

Authors: Katharina Fritz, Lukas Neumann, Markus Meinert

Abstract: We study current-induced deterministic magnetization switching and domain wall motion via polar Kerr microscopy in all-amorphous W$_{66}$Hf$_{34}$/CoFeB/TaO$_\text{x}$ with perpendicular magnetic anisotropy and large spin Hall angle. Investigations of magnetization switching as a function of in-plane assist field and current pulse-width yield switching current densities as low as $3\times 10^{9}$… ▽ More We study current-induced deterministic magnetization switching and domain wall motion via polar Kerr microscopy in all-amorphous W$_{66}$Hf$_{34}$/CoFeB/TaO$_\text{x}$ with perpendicular magnetic anisotropy and large spin Hall angle. Investigations of magnetization switching as a function of in-plane assist field and current pulse-width yield switching current densities as low as $3\times 10^{9}$ A/m$^2$. We accredit this low switching current density to a low depinning current density, which was obtained from measurements of domain wall displacements upon current injection. This correlation is verified by investigations of a Ta/CoFeB/MgO/Ta reference sample, which showed critical current densities of at least one order of magnitude larger, respectively. △ Less

Submitted 24 August, 2020; v1 submitted 30 October, 2019; originally announced October 2019.

Comments: 9 pages, 8 figures

Journal ref: Phys. Rev. Applied 14, 034047 (2020)

Resistive contribution in electrical switching experiments with antiferromagnets

Authors: Tristan Matalla-Wagner, Jan-Michael Schmalhorst, Günter Reiss, Nobumichi Tamura, Markus Meinert

Abstract: Recent research demonstrated the electrical switching of antiferromagnets via intrinsic spin-orbit torque or the spin Hall effect of an adjacent heavy metal layer. The electrical readout is typically realized by measuring the transverse anisotropic magnetoresistance at planar cross- or star-shaped devices with four or eight arms, respectively. Depending on the material, the current density necessa… ▽ More Recent research demonstrated the electrical switching of antiferromagnets via intrinsic spin-orbit torque or the spin Hall effect of an adjacent heavy metal layer. The electrical readout is typically realized by measuring the transverse anisotropic magnetoresistance at planar cross- or star-shaped devices with four or eight arms, respectively. Depending on the material, the current density necessary to switch the magnetic state can be large, often close to the destruction threshold of the device. We demonstrate that the resulting electrical stress changes the film resistivity locally and thereby breaks the fourfold rotational symmetry of the conductor. This symmetry breaking due to film inhomogeneity produces signals, that resemble the anisotropic magnetoresistance and is experimentally seen as a "saw-tooth"-shaped transverse resistivity. This artifact can persist over many repeats of the switching experiment and is not easily separable from the magnetic contribution. We discuss the origin of the artifact, elucidate the role of the film crystallinity, and propose approaches how to separate the resistive contribution from the magnetic contribution. △ Less

Submitted 18 October, 2019; originally announced October 2019.

Comments: 9 pages, 7 figures

Journal ref: Phys. Rev. Research 2, 033077 (2020)

Spin-orbit torque induced electrical switching of antiferromagnetic MnN

Authors: Mareike Dunz, Tristan Matalla-Wagner, Markus Meinert

Abstract: Electrical switching and readout of antiferromagnets allows to exploit the unique properties of antiferromagnetic materials in nanoscopic electronic devices. Here we report experiments on the spin-orbit torque induced electrical switching of a polycrystalline, metallic antiferromagnet with low anisotropy and high Néel temperature. We demonstrate the switching in a Ta / MnN / Pt trilayer system, de… ▽ More Electrical switching and readout of antiferromagnets allows to exploit the unique properties of antiferromagnetic materials in nanoscopic electronic devices. Here we report experiments on the spin-orbit torque induced electrical switching of a polycrystalline, metallic antiferromagnet with low anisotropy and high Néel temperature. We demonstrate the switching in a Ta / MnN / Pt trilayer system, deposited by (reactive) magnetron sputtering. The dependence of switching amplitude, efficiency, and relaxation are studied with respect to the MnN film thickness, sample temperature, and current density. Our findings are consistent with a thermal activation model and resemble to a large extent previous measurements on CuMnAs and Mn$_2$Au, which exhibit similar switching characteristics due to an intrinsic spin-orbit torque. △ Less

Submitted 24 September, 2019; v1 submitted 4 July, 2019; originally announced July 2019.

Comments: 7 pages, 5 figures

Journal ref: Phys. Rev. Research 2, 013347 (2020)

Electrical Néel-order switching in magnetron-sputtered CuMnAs thin films

Authors: Tristan Matalla-Wagner, Matthias-Felix Rath, Dominik Graulich, Jan-Michael Schmalhorst, Günter Reiss, Markus Meinert

Abstract: Antiferromagnetic materials as active components in spintronic devices promise insensitivity against external magnetic fields, the absence of own magnetic stray fields, and ultrafast dynamics at the picosecond time scale. Materials with certain crystal-symmetry show an intrinsic Néel-order spin-orbit torque that can efficiently switch the magnetic order of an antiferromagnet. The tetragonal varian… ▽ More Antiferromagnetic materials as active components in spintronic devices promise insensitivity against external magnetic fields, the absence of own magnetic stray fields, and ultrafast dynamics at the picosecond time scale. Materials with certain crystal-symmetry show an intrinsic Néel-order spin-orbit torque that can efficiently switch the magnetic order of an antiferromagnet. The tetragonal variant of CuMnAs was shown to be electrically switchable by this intrinsic spin-orbit effect and its use in memory cells with memristive properties has been recently demonstrated for high-quality films grown with molecular beam epitaxy. Here, we demonstrate that the magnetic order of magnetron-sputtered CuMnAs films can also be manipulated by electrical current pulses. The switching efficiency and relaxation as a function of temperature, current density, and pulse width can be described by a thermal-activation model. Our findings demonstrate that CuMnAs can be fabricated with an industry-compatible deposition technique, which will accelerate the development cycle of devices based on this remarkable material. △ Less

Submitted 25 June, 2019; v1 submitted 29 March, 2019; originally announced March 2019.

Comments: 6 + 4 pages, 4 + 4 figures (main + appendix)

Journal ref: Phys. Rev. Applied 12, 064003 (2019)

Improved thermal stability in doped MnN/CoFe exchange bias systems

Authors: Mareike Dunz, Björn Büker, Markus Meinert

Abstract: We investigated the influence of doping antiferromagnetic MnN in polycrystalline MnN/CoFe exchange bias systems, showing high exchange bias of up to 1800 Oe at room temperature. The thermal stability of those systems is limited by nitrogen diffusion that occurs during annealing processes. In order to improve the thermal stability, defect energies of elements throughout the periodic table substitut… ▽ More We investigated the influence of doping antiferromagnetic MnN in polycrystalline MnN/CoFe exchange bias systems, showing high exchange bias of up to 1800 Oe at room temperature. The thermal stability of those systems is limited by nitrogen diffusion that occurs during annealing processes. In order to improve the thermal stability, defect energies of elements throughout the periodic table substituting Mn were calculated via density functional theory. Elements calculated to have negative defect energies bind nitrogen stronger to the lattice and could be able to prevent diffusion. We prepared exchange bias stacks with doping concentrations of a few percent by (reactive) co-sputtering, testing doping elements with defect energies ranging from highly negative to slightly positive. We show that doping with elements calculated to have negative defect energies indeed improves the thermal stability. Y doped MnN layers with doping concentrations below 2% result in systems that show exchange bias fields higher than 1000 Oe for annealing temperatures up to 485° C. △ Less

Submitted 9 August, 2018; originally announced August 2018.

Sobolev spaces and calculus of variations on fractals

Authors: Michael Hinz, Dorina Koch, Melissa Meinert

Abstract: The present note contains a review of $p$-energies and Sobolev spaces on metric measure spaces that carry a strongly local regular Dirichlet form. These Sobolev spaces are then used to generalize some basic results from the calculus of variations, such as the existence of minimizers for convex functionals and certain constrained mimimization problems. This applies to a number of non-classical situ… ▽ More The present note contains a review of $p$-energies and Sobolev spaces on metric measure spaces that carry a strongly local regular Dirichlet form. These Sobolev spaces are then used to generalize some basic results from the calculus of variations, such as the existence of minimizers for convex functionals and certain constrained mimimization problems. This applies to a number of non-classical situations such as degenerate diffusions, superpositions of diffusions and diffusions on fractals or on products of fractals. △ Less

Submitted 11 May, 2018; originally announced May 2018.

MSC Class: 28A80; 35J20; 35J92; 46B10; 46E35; 47A07; 49J40; 49J45

Influence of the Hall-bar geometry on harmonic Hall voltage measurements of spin-orbit torques

Authors: Lukas Neumann, Markus Meinert

Abstract: Harmonic Hall voltage measurements are a wide-spread quantitative technique for the measurement of spin-orbit induced effective fields in heavy-metal / ferromagnet heterostructures. In the vicinity of the voltage pickup lines in the Hall bar, the current is inhomogeneous, which leads to a hitherto not quantified reduction of the effective fields and derived quantities, such as the spin Hall angle… ▽ More Harmonic Hall voltage measurements are a wide-spread quantitative technique for the measurement of spin-orbit induced effective fields in heavy-metal / ferromagnet heterostructures. In the vicinity of the voltage pickup lines in the Hall bar, the current is inhomogeneous, which leads to a hitherto not quantified reduction of the effective fields and derived quantities, such as the spin Hall angle or the spin Hall conductivity. Here we present a thorough analysis of the influence of the aspect ratio of the voltage pickup lines to current channel widths on the apparent spin Hall angle. Experiments were performed with Hall bars with a broad range of aspect ratios and a substantial reduction of the apparent spin Hall angle is already seen in Hall crosses with an aspect ratio of 1:1. Our experimental results are confirmed by finite-element simulations of the current flow. △ Less

Submitted 20 April, 2018; originally announced April 2018.

Comments: 4 pages, 3 figures

Large Spin Hall Effect in an Amorphous Binary Alloy

Authors: Markus Meinert, Katharina Fritz, Sebastian Wimmer, Hubert Ebert

Abstract: We investigate the spin Hall effect of W-Hf thin films, which exhibit a phase transition from a segregated phase mixture to an amorphous alloy below 70% W. The spin Hall angle was determined with a planar harmonic Hall voltage technique. Due to the accompanying jump in resistivity, the spin Hall angle shows a pronounced maximum at the composition of the phase transition. The spin Hall conductivity… ▽ More We investigate the spin Hall effect of W-Hf thin films, which exhibit a phase transition from a segregated phase mixture to an amorphous alloy below 70% W. The spin Hall angle was determined with a planar harmonic Hall voltage technique. Due to the accompanying jump in resistivity, the spin Hall angle shows a pronounced maximum at the composition of the phase transition. The spin Hall conductivity does, however, reduce from W to Hf with a weak discontinouity across the phase transition. The maximum spin Hall angle of $θ_\mathrm{SH} = -0.25$ is obtained for amorphous W$_{0.7}$Hf$_{0.3}$. A detailed comparison with spin Hall conductivities calculated from first principles for hcp, fcc, and bcc solid solutions provides valuable insight into the alloying physics of this binary system. △ Less

Submitted 8 January, 2018; originally announced January 2018.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 98, 094433 (2018)

On the viscous Burgers equation on metric graphs and fractals

Authors: Michael Hinz, Melissa Meinert

Abstract: We study a formulation of Burgers equation on the Sierpinski gasket, which is the prototype of a p.c.f. self-similar fractal. One possibility is to implement Burgers equation as a semilinear heat equation associated with the Laplacian for scalar functions, just as on the unit interval. Here we propose a second, different formulation which follows from the Cole-Hopf transform and is associated with… ▽ More We study a formulation of Burgers equation on the Sierpinski gasket, which is the prototype of a p.c.f. self-similar fractal. One possibility is to implement Burgers equation as a semilinear heat equation associated with the Laplacian for scalar functions, just as on the unit interval. Here we propose a second, different formulation which follows from the Cole-Hopf transform and is associated with the Laplacian for vector fields. The difference between these two equations can be understood in terms of different vertex conditions for Laplacians on metric graphs. For the second formulation we show existence and uniqueness of solutions and verify the continuous dependence on the initial condition. We also prove that solutions on the Sierpinski gasket can be approximated in a weak sense by solutions to corresponding equations on approximating metric graphs. These results are part of a larger program discussing nonlinear partial differential equations on fractal spaces. △ Less

Submitted 14 December, 2017; originally announced December 2017.

MSC Class: 05C99; 28A80; 35A01; 35A02; 35D30; 35Q35; 47A07; 47B25

Enhanced exchange bias in MnN/CoFe bilayers after high-temperature annealing

Authors: Mareike Dunz, Jan Schmalhorst, Markus Meinert

Abstract: We report an exchange bias of more than $2700\,$Oe at room temperature in MnN/CoFe bilayers after high-temperature annealing. We studied the dependence of exchange bias on the annealing temperature for different MnN thicknesses in detail and found that samples with $t_{\text{MnN}}>32\,$nm show an increase of exchange bias for annealing temperatures higher than $T_{\text{A}}=400\,^{\circ}$C. Maximu… ▽ More We report an exchange bias of more than $2700\,$Oe at room temperature in MnN/CoFe bilayers after high-temperature annealing. We studied the dependence of exchange bias on the annealing temperature for different MnN thicknesses in detail and found that samples with $t_{\text{MnN}}>32\,$nm show an increase of exchange bias for annealing temperatures higher than $T_{\text{A}}=400\,^{\circ}$C. Maximum exchange bias values exceeding $2000\,$Oe with reasonably small coercive fields around $600\,$Oe are achieved for $t_{\text{MnN}}= 42, 48\,$nm. The median blocking temperature of those systems is determined to be $180\,^{\circ}$C after initial annealing at $T_{\text{A}}=525\,^{\circ}$C. X-ray diffraction measurements and Auger depth profiling show that the large increase of exchange bias after high-temperature annealing is accompanied by strong nitrogen diffusion into the Ta buffer layer of the stacks. △ Less

Submitted 24 October, 2017; originally announced October 2017.

Large magneto-Seebeck effect in magnetic tunnel junctions with half-metallic Heusler electrodes

Authors: Alexander Boehnke, Ulrike Martens, Christian Sterwerf, Alessia Niesen, Torsten Huebner, Marvin von der Ehe, Markus Meinert, Timo Kuschel, Andy Thomas, Christian Heiliger, Markus Münzenberg, Günter Reiss

Abstract: Spin caloritronics studies the interplay between charge-, heat- and spin-currents, which are initiated by temperature gradients in magnetic nanostructures. A plethora of new phenomena has been discovered that promises, e.g., to make wasted heat in electronic devices useable or to provide new read-out mechanisms for information. However, only few materials have been studied so far with Seebeck volt… ▽ More Spin caloritronics studies the interplay between charge-, heat- and spin-currents, which are initiated by temperature gradients in magnetic nanostructures. A plethora of new phenomena has been discovered that promises, e.g., to make wasted heat in electronic devices useable or to provide new read-out mechanisms for information. However, only few materials have been studied so far with Seebeck voltages of only some μV, which hampers applications. Here, we demonstrate that half-metallic Heusler compounds are hot candidates for enhancing spin-dependent thermoelectric effects. This becomes evident when considering the asymmetry of the spin-split density of electronic states around the Fermi level that determines the spin-dependent thermoelectric transport in magnetic tunnel junctions. We identify Co$_2$FeAl and Co$_2$FeSi Heusler compounds as ideal due to their energy gaps in the minority density of states, and demonstrate devices with substantially larger Seebeck voltages and tunnel magneto-Seebeck effect ratios than the commonly used Co-Fe-B based junctions. △ Less

Submitted 20 November, 2017; v1 submitted 3 July, 2017; originally announced July 2017.

Comments: 9 pages, 4 figures

Journal ref: Nat. Commun. 8, 1626 (2017)

Electrical switching of antiferromagnetic Mn$_2$Au and the role of thermal activation

Authors: Markus Meinert, Dominik Graulich, Tristan Matalla-Wagner

Abstract: Electrical manipulation of antiferromagnets with specific symmetries offers the prospect of creating novel, antiferromagnetic spintronic devices. Such devices aim to make use of the insensitivity to external magnetic fields and the ultrafast dynamics at the picosecond timescale intrinsic to antiferromagnets. The possibility to electrically switch antiferromagnets was first predicted for Mn2Au and… ▽ More Electrical manipulation of antiferromagnets with specific symmetries offers the prospect of creating novel, antiferromagnetic spintronic devices. Such devices aim to make use of the insensitivity to external magnetic fields and the ultrafast dynamics at the picosecond timescale intrinsic to antiferromagnets. The possibility to electrically switch antiferromagnets was first predicted for Mn2Au and then experimentally observed in tetragonal CuMnAs. Here, we report on the electrical switching and detection of the Neel order in epitaxial films of Mn2Au. The exponential dependences of the switching amplitude on the current density and the temperature are explained by a macroscopic thermal activation model taking into account the effect of the Joule heating in Hall cross devices and we observe that the thermal activation plays a key role in the reorientation process of the Neel order. Our model analysis shows that the electrically set Neel-state is long-term stable at room temperature, paving the way for practical applications in memory devices. △ Less

Submitted 3 April, 2018; v1 submitted 21 June, 2017; originally announced June 2017.

Comments: 8 pages, 6 figures

Journal ref: Phys. Rev. Applied 9, 064040 (2018)

Integration of antiferromagnetic Heusler compound Ru$_2$MnGe into spintronic devices

Authors: Jan Balluff, Teodor Huminiuc, Markus Meinert, Atsufumi Hirohata, Günter Reiss

Abstract: We report on the first integration of an antiferromagnetic Heusler compound acting as a pinning layer into magnetic tunneling junctions. The antiferromagnet Ru$_2$MnGe is used to pin the magnetization direction of a ferromagnetic Fe layer in MgO based thin film tunnelling magnetoresistance stacks. The samples were prepared using magnetron co-sputtering. We investigate the structural properties by… ▽ More We report on the first integration of an antiferromagnetic Heusler compound acting as a pinning layer into magnetic tunneling junctions. The antiferromagnet Ru$_2$MnGe is used to pin the magnetization direction of a ferromagnetic Fe layer in MgO based thin film tunnelling magnetoresistance stacks. The samples were prepared using magnetron co-sputtering. We investigate the structural properties by X-ray diffraction and reflection, as well as atomic force and high-resolution transmission electron microscopy. We find an excellent crystal growth quality with low interface roughnesses of 1-3 Å, which is crucial for the preparation of working tunnelling barriers. Using Fe as a ferromagnetic electrode material we prepared magnetic tunneling junctions and measured the magnetoresistance. We find a sizeable maximum magnetoresistance value of 135%, which is comparable to other common Fe based MTJ systems. △ Less

Submitted 23 May, 2017; originally announced May 2017.

Comments: 5 pages, 5 figures

Tuning the perpendicular magnetic anisotropy, spin Hall switching current density and domain wall velocity by submonolayer insertion in Ta / CoFeB / MgO heterostructures

Authors: Satya Prakash Bommanaboyena, Markus Meinert

Abstract: By submonolayer insertion of Au, Pt, or Pd into Ta / CoFeB / MgO / Ta heterostructures we tune the perpendicular magnetic anisotropy and the coercive field of the ferromagnetic layer. We demonstrate that this has a major influence on the spin Hall switching current density and its dependence on the external magnetic field. Despite a rather small effective spin Hall angle of… ▽ More By submonolayer insertion of Au, Pt, or Pd into Ta / CoFeB / MgO / Ta heterostructures we tune the perpendicular magnetic anisotropy and the coercive field of the ferromagnetic layer. We demonstrate that this has a major influence on the spin Hall switching current density and its dependence on the external magnetic field. Despite a rather small effective spin Hall angle of $θ_\mathrm{SH} \approx -0.07$, we obtain switching current densities as low as $2 \times 10^{10}$ A/m$^2$ with a 2 Å Au interlayer. We find that the Dzyaloshinskii-Moriya interaction parameter $D$ is reduced with Au or Pd interlayers, and the perpendicular anisotropy field is reduced by an order of magnitude with the Pd interlayer. The dependence of the switching current density on the current pulse width is quantitatively explained with a domain wall nucleation and propagation model. Interface engineering is thus found to be a suitable route to tailor the current-induced magnetization switching properties of magnetic heterostructures. △ Less

Submitted 13 May, 2017; originally announced May 2017.

Comments: 5 pages, 5 figures

Giant perpendicular exchange bias with antiferromagnetic MnN

Authors: Philipp Zilske, Dominik Graulich, Mareike Dunz, Markus Meinert

Abstract: We investigated an out-of-plane exchange bias system that is based on the antiferromagnet MnN. Polycrystalline, highly textured film stacks of Ta / MnN / CoFeB / MgO / Ta were grown on SiO$_x$ by (reactive) magnetron sputtering and studied by x-ray diffraction and Kerr magnetometry. Nontrivial modifications of the exchange bias and the perpendicular magnetic anisotropy were observed both as functi… ▽ More We investigated an out-of-plane exchange bias system that is based on the antiferromagnet MnN. Polycrystalline, highly textured film stacks of Ta / MnN / CoFeB / MgO / Ta were grown on SiO$_x$ by (reactive) magnetron sputtering and studied by x-ray diffraction and Kerr magnetometry. Nontrivial modifications of the exchange bias and the perpendicular magnetic anisotropy were observed both as functions of film thicknesses as well as field cooling temperatures. In optimized film stacks, a giant perpendicular exchange bias of 3600 Oe and a coercive field of 350 Oe were observed at room temperature. The effective interfacial exchange energy is estimated to be $J_\mathrm{eff} = 0.24$ mJ/m$^2$ and the effective uniaxial anisotropy constant of the antiferromagnet is $K_\mathrm{eff} = 24$ kJ/m$^3$. The maximum effective perpendicular anisotropy field of the CoFeB layer is $H_\mathrm{ani} = 3400$ Oe. These values are larger than any previously reported values. These results possibly open a route to magnetically stable, exchange biased perpendicularly magnetized spin valves. △ Less

Submitted 25 April, 2017; v1 submitted 24 February, 2017; originally announced February 2017.

Comments: 4 pages, 5 figures

Temperature dependence of the spin Hall angle and switching current in the nc-W(O)/CoFeB/MgO system with perpendicular magnetic anisotropy

Authors: Lukas Neumann, Daniel Meier, Jan Schmalhorst, Karsten Rott, Günter Reiss, Markus Meinert

Abstract: We investigated the temperature dependence of the switching current for a perpendicularly magnetized CoFeB film deposited on a nanocrystalline tungsten film with large oxygen content: nc-W(O). The spin Hall angle $|Θ_\mathrm{SH}| \approx 0.22$ is independent of temperature, whereas the switching current increases strongly at low temperature. We show that the nc-W(O) is insensitive to annealing. It… ▽ More We investigated the temperature dependence of the switching current for a perpendicularly magnetized CoFeB film deposited on a nanocrystalline tungsten film with large oxygen content: nc-W(O). The spin Hall angle $|Θ_\mathrm{SH}| \approx 0.22$ is independent of temperature, whereas the switching current increases strongly at low temperature. We show that the nc-W(O) is insensitive to annealing. It thus can be a good choice for the integration of spin Hall driven writing of information in magnetic memory or logic devices that require a high-temperature annealing process during fabrication. △ Less

Submitted 8 August, 2016; originally announced August 2016.

Comments: 4 pages, 4 figures

Low Gilbert damping in Co2FeSi and Fe2CoSi films

Authors: Christian Sterwerf, Soumalya Paul, Behrouz Khodadadi, Markus Meinert, Jan-Michael Schmalhorst, Mathias Buchmeier, Claudia K. A. Mewes, Tim Mewes, Günter Reiss

Abstract: Thin highly textured Fe$_{\mathrm{1+x}}$Co$_{\mathrm{2-x}}$Si ($0 \leq$ x $\leq 1$) films were prepared on MgO (001) substrates by magnetron co-sputtering. The magneto-optic Kerr effect (MOKE) and ferromagnetic resonance (FMR) measurements were used to investigate the composition dependence of the magnetization, the magnetic anisotropy, the gyromagnetic ratio and the relaxation of the films. The e… ▽ More Thin highly textured Fe$_{\mathrm{1+x}}$Co$_{\mathrm{2-x}}$Si ($0 \leq$ x $\leq 1$) films were prepared on MgO (001) substrates by magnetron co-sputtering. The magneto-optic Kerr effect (MOKE) and ferromagnetic resonance (FMR) measurements were used to investigate the composition dependence of the magnetization, the magnetic anisotropy, the gyromagnetic ratio and the relaxation of the films. The effective magnetization for the thin Fe$_{\mathrm{1+x}}$Co$_{\mathrm{2-x}}$Si films, determined by FMR measurements, are consistent with the Slater Pauling prediction. Both MOKE and FMR measurements reveal a pronounced fourfold anisotropy distribution for all films. In addition we found a strong influence of the stoichiometry on the anisotropy as the cubic anisotropy strongly increases with increasing Fe concentration. The gyromagnetic ratio is only weakly dependent on the composition. We find low Gilbert damping parameters for all films with values down to $0.0012\pm0.00012$ for Fe$_{1.75}$Co$_{1.25}$Si. The effective damping parameter for Co$_2$FeSi is found to be $0.0018\pm 0.0004$. We also find a pronounced anisotropic relaxation, which indicates significant contributions of two-magnon scattering processes that is strongest along the easy axes of the films. This makes thin Fe$_{\mathrm{1+x}}$Co$_{\mathrm{2-x}}$Si films ideal materials for the application in STT-MRAM devices. △ Less

Submitted 22 May, 2016; originally announced May 2016.

Exchange interactions and Curie temperatures of the tetrametal nitrides Cr4N, Mn4N, Fe4N, Co4N, and Ni4N

Authors: Markus Meinert

Abstract: The exchange interactions of Cr4N, Mn4N, Fe4N, Co4N, and Ni4N compounds with perovskite structure were calculated to obtain the Curie temperatures for these compounds from Monte Carlo calculations. Contrary to naive expectation, the exchange interactions vary markedly among these five compounds. In Fe4N, the intra-sublattice interaction of the Fe 3c atoms is strongly negative, leading to a signifi… ▽ More The exchange interactions of Cr4N, Mn4N, Fe4N, Co4N, and Ni4N compounds with perovskite structure were calculated to obtain the Curie temperatures for these compounds from Monte Carlo calculations. Contrary to naive expectation, the exchange interactions vary markedly among these five compounds. In Fe4N, the intra-sublattice interaction of the Fe 3c atoms is strongly negative, leading to a significant reduction of the Curie temperature. The calculated Curie temperatures are 291K (Cr4N), 710K (Mn4N), 668K (Fe4N), 827K (Co4N), and 121K (Ni4N), in good agreement with experimental observations where available. The much lower Curie temperature of Ni4N compared to fcc Ni is explained on the basis of the exchange interactions. △ Less

Submitted 7 January, 2016; originally announced January 2016.

Comments: 11 pages, 3 figures

Journal ref: J. Phys.: Condens. Matter 28, 056006 (2016)

Room temperature exchange bias in BiFeO3 / Co-Fe bilayers

Authors: Christian Sterwerf, Markus Meinert, Elke Arenholz, Jan-Michael Schmalhorst, Günter Reiss

Abstract: Thin highly epitaxial BiFeO$_3$ films were prepared on SrTiO$_3$ (100) substrates by reactive magnetron co-sputtering. Detailed MOKE measurements on BiFeO$_3$/Co-Fe bilayers were performed to investigate the exchange bias as a function of the films thicknesses and Co-Fe stoichiometries. We found a maximum exchange bias of H$_{\mathrm{eb}}$=92 Oe and a coercive field of H$_{\mathrm{c}}$=89 Oe for a… ▽ More Thin highly epitaxial BiFeO$_3$ films were prepared on SrTiO$_3$ (100) substrates by reactive magnetron co-sputtering. Detailed MOKE measurements on BiFeO$_3$/Co-Fe bilayers were performed to investigate the exchange bias as a function of the films thicknesses and Co-Fe stoichiometries. We found a maximum exchange bias of H$_{\mathrm{eb}}$=92 Oe and a coercive field of H$_{\mathrm{c}}$=89 Oe for a 12.5 nm thick BiFeO$_3$ film with a 2 nm thick Co layer. The unidirectional anisotropy is clearly visible in in-plane rotational MOKE measurements. AMR measurements reveal a strongly increasing coercivity with decreasing temperature, but no significant change in the exchange bias field. △ Less

Submitted 26 December, 2015; v1 submitted 18 December, 2015; originally announced December 2015.

Unconventional superconductivity in YPtBi and related topological semimetals

Authors: Markus Meinert

Abstract: YPtBi, a topological semimetal with very low carrier density, was recently found to be superconducting below $T_\mathrm{c} = 0.77$\,K. In the conventional theory, the nearly vanishing density of states around the Fermi level would imply a vanishing electron-phonon coupling and would therefore not allow for superconductivity. Based on relativistic density functional theory calculations of the elect… ▽ More YPtBi, a topological semimetal with very low carrier density, was recently found to be superconducting below $T_\mathrm{c} = 0.77$\,K. In the conventional theory, the nearly vanishing density of states around the Fermi level would imply a vanishing electron-phonon coupling and would therefore not allow for superconductivity. Based on relativistic density functional theory calculations of the electron-phonon coupling in YPtBi it is found that carrier concentrations of more than $10^{21}$\,cm$^{-3}$ are required to explain the observed critical temperature with the conventional pairing mechanism, which is several orders of magnitude larger than experimentally observed. It is very likely that an unconventional pairing mechanism is responsible for the superconductivity in YPtBi and related topological semimetals with the Half-Heusler structure. △ Less

Submitted 10 March, 2016; v1 submitted 21 October, 2015; originally announced October 2015.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. Lett. 116, 137001 (2016)

Static magnetic proximity effect in Pt/Ni$_{1-x}$Fe$_x$ bilayers investigated by x-ray resonant magnetic reflectivity

Authors: Christoph Klewe, Timo Kuschel, Jan-Michael Schmalhorst, Florian Bertram, Olga Kuschel, Joachim Wollschläger, Jörg Strempfer, Markus Meinert, Günter Reiss

Abstract: We present x-ray resonant magnetic reflectivity (XRMR) as a very sensitive tool to detect proximity induced interface spin polarization in Pt/Fe, Pt/Ni$_{33}$Fe$_{67}$, Pt/Ni$_{81}$Fe$_{19}$ (permalloy), and Pt/Ni bilayers. We demonstrate that a detailed analysis of the reflected x-ray intensity gives insight in the spatial distribution of the spin polarization of a non-magnetic metal across the i… ▽ More We present x-ray resonant magnetic reflectivity (XRMR) as a very sensitive tool to detect proximity induced interface spin polarization in Pt/Fe, Pt/Ni$_{33}$Fe$_{67}$, Pt/Ni$_{81}$Fe$_{19}$ (permalloy), and Pt/Ni bilayers. We demonstrate that a detailed analysis of the reflected x-ray intensity gives insight in the spatial distribution of the spin polarization of a non-magnetic metal across the interface to a ferromagnetic layer. The evaluation of the experimental results with simulations based on optical data from ab initio calculations provides the induced magnetic moment per Pt atom in the spin polarized volume adjacent to the ferromagnet. We find the largest spin polarization in Pt/Fe and a much smaller magnetic proximity effect in Pt/Ni. Additional XRMR experiments with varying photon energy are in good agreement with the theoretical predictions for the energy dependence of the magnetooptic parameters and allow identifying the optical dispersion $δ$ and absorption $β$ across the Pt L3-absorption edge. △ Less

Submitted 3 August, 2015; originally announced August 2015.

Journal ref: Phys. Rev. B 93, 214440 (2016)

Large exchange bias in polycrystalline MnN/CoFe bilayers at room temperature

Authors: Markus Meinert, Björn Büker, Dominik Graulich, Mareike Dunz

Abstract: We report on the new polycrystalline exchange bias system MnN/CoFe, which shows exchange bias of up to 1800Oe at room temperature with a coercive field around 600Oe. The room temperature values of the interfacial exchange energy and the effective uniaxial anisotropy are estimated to be $J_\mathrm{eff} = 0.41\,\mathrm{mJ}/\mathrm{m}^2$ and $K_\mathrm{eff} = 37\,\mathrm{kJ}\,/\,\mathrm{m}^3$. The th… ▽ More We report on the new polycrystalline exchange bias system MnN/CoFe, which shows exchange bias of up to 1800Oe at room temperature with a coercive field around 600Oe. The room temperature values of the interfacial exchange energy and the effective uniaxial anisotropy are estimated to be $J_\mathrm{eff} = 0.41\,\mathrm{mJ}/\mathrm{m}^2$ and $K_\mathrm{eff} = 37\,\mathrm{kJ}\,/\,\mathrm{m}^3$. The thermal stability was found to be tunable by controlling the nitrogen content of the MnN. The maximum blocking temperature exceeds $325^\circ$C, however the median blocking temperature in the limit of thick MnN is $160^\circ$C. Good oxidation stability through self-passivation was observed, enabling the use of MnN in lithographically defined microstructures. As a proof-of-principle we demonstrate a simple GMR stack exchange biased with MnN, which shows clear separation between parallel and antiparallel magnetic states. These properties come along with a surprisingly simple manufacturing process for the MnN films. △ Less

Submitted 18 September, 2015; v1 submitted 21 January, 2015; originally announced January 2015.

Comments: 7 pages, 6 figures

Journal ref: Phys. Rev. B 92, 144408 (2015)

Static magnetic proximity effect in Pt/NiFe2O4 and Pt/Fe bilayers investigated by x-ray resonant magnetic reflectivity

Authors: Timo Kuschel, Christoph Klewe, Jan-Michael Schmalhorst, Florian Bertram, Olga Schuckmann, Tobias Schemme, Joachim Wollschläger, Sonia Francoual, Jörg Strempfer, Arunava Gupta, Markus Meinert, Gerhard Götz, Daniel Meier, Günter Reiss

Abstract: The spin polarization of Pt in Pt/NiFe2O4 and Pt/Fe bilayers is studied by interface-sensitive x-ray resonant magnetic reflectivity to investigate static magnetic proximity effects. The asymmetry ratio of the reflectivity was measured at the Pt L3 absorption edge using circular polarized x-rays for opposite directions of the magnetization at room temperature. The results of the 2% asymmetry ratio… ▽ More The spin polarization of Pt in Pt/NiFe2O4 and Pt/Fe bilayers is studied by interface-sensitive x-ray resonant magnetic reflectivity to investigate static magnetic proximity effects. The asymmetry ratio of the reflectivity was measured at the Pt L3 absorption edge using circular polarized x-rays for opposite directions of the magnetization at room temperature. The results of the 2% asymmetry ratio for Pt/Fe bilayers are independent of the Pt thickness between 1.8 and 20 nm. By comparison with ab initio calculations, the maximum magnetic moment per spin polarized Pt atom at the interface is determined to be $(0.6\pm0.1)\,μ_{B}$ for Pt/Fe. For Pt/NiFe2O4 the asymmetry ratio drops below the sensitivity limit of $0.02\,μ_{B}$ per Pt atom. Therefore, we conclude, that the longitudinal spin Seebeck effect recently observed in Pt/NiFe2O4 is not influenced by a proximity induced anomalous Nernst effect. △ Less

Submitted 28 August, 2015; v1 submitted 1 November, 2014; originally announced November 2014.

Comments: 5 pages, 5 figures

Journal ref: Phys. Rev. Lett. 115, 097401 (2015)

Experimental realization of a semiconducting full Heusler compound: Fe2TiSi

Authors: Markus Meinert, Manuel P. Geisler, Jan Schmalhorst, Ulrich Heinzmann, Elke Arenholz, Walid Hetaba, Michael Stöger-Pollach, Andreas Hütten, Günter Reiss

Abstract: Single-phase films of the full Heusler compound Fe2TiSi have been prepared by magnetron sputtering. The compound is found to be a semiconductor with a gap of 0.4eV. The electrical resistivity has a logarithmic temperature dependence up to room temperature due to Kondo scattering of a dilute free electron gas off superparamagnetic impurities. The origin of the electron gas is extrinsic due to disor… ▽ More Single-phase films of the full Heusler compound Fe2TiSi have been prepared by magnetron sputtering. The compound is found to be a semiconductor with a gap of 0.4eV. The electrical resistivity has a logarithmic temperature dependence up to room temperature due to Kondo scattering of a dilute free electron gas off superparamagnetic impurities. The origin of the electron gas is extrinsic due to disorder or off-stoichiometry. Density functional theory calculations of the electronic structure are in excellent agreement with electron energy loss, optical, and x-ray absorption experiments. Fe2TiSi may find applications as a thermoelectric material. △ Less

Submitted 24 February, 2014; originally announced February 2014.

Comments: 6 pages, 6 figures

Journal ref: Phys. Rev. B 90, 085127 (2014)

Multiple phases in sputtered Cr2CoGa films

Authors: Manuel P. Geisler, Markus Meinert, Jan Schmalhorst, Günter Reiss, Elke Arenholz

Abstract: By magnetron co-sputtering, thin films of a nominal Cr2CoGa compound were deposited on MgO and MgAl2O4. To achieve crystallisation in the inverse Heusler structure, different heat treatments were tested. Instead of the inverse Heusler structure, we observed phase separation and precipitate formation in dependence on the heat treatment. The main precipitate is Cr3Ga in A15 structure. The remainder… ▽ More By magnetron co-sputtering, thin films of a nominal Cr2CoGa compound were deposited on MgO and MgAl2O4. To achieve crystallisation in the inverse Heusler structure, different heat treatments were tested. Instead of the inverse Heusler structure, we observed phase separation and precipitate formation in dependence on the heat treatment. The main precipitate is Cr3Ga in A15 structure. The remainder forms Co-rich CoGa in the B2 structure and possibly Cr-rich CoCr in the sigma-phase. △ Less

Submitted 9 February, 2014; v1 submitted 20 December, 2013; originally announced December 2013.

Comments: 4 pages, 4 figures

Journal ref: Journal of Alloys and Compounds 598, 213 (2014)

Physical characteristics and cation distribution of NiFe2O4 thin films with high resistivity prepared by reactive co-sputtering

Authors: Christoph Klewe, Markus Meinert, Alexander Boehnke, Karsten Kuepper, Elke Arenholz, Arunava Gupta, Jan-Michael Schmalhorst, Timo Kuschel, Guenter Reiss

Abstract: We fabricated NiFe2O thin films on MgAl2O4 (001) substrates by reactive dc magnetron co-sputtering in a pure oxygen atmosphere at different substrate temperatures. The film properties were investigated by various techniques with a focus on their structure, surface topography, magnetic characteristics, and transport properties. Structural analysis revealed a good crystallization with epitaxial grow… ▽ More We fabricated NiFe2O thin films on MgAl2O4 (001) substrates by reactive dc magnetron co-sputtering in a pure oxygen atmosphere at different substrate temperatures. The film properties were investigated by various techniques with a focus on their structure, surface topography, magnetic characteristics, and transport properties. Structural analysis revealed a good crystallization with epitaxial growth and low roughness and a similar quality as in films grown by pulsed laser deposition. Electrical conductivity measurements showed high room temperature resistivity (12 Ohmm), but low activation energy, indicating an extrinsic transport mechanism. A band gap of about 1.55 eV was found by optical spectroscopy. Detailed x-ray spectroscopy studies confirmed the samples to be ferrimagnetic with fully compensated Fe moments. By comparison with multiplet calculations of the spectra we found that the cation valencies are to a large extent Ni2+ and Fe3+. △ Less

Submitted 4 December, 2013; originally announced December 2013.

Comments: 8 pages, 8 figures

Journal ref: J. Appl. Phys. 115, 123903 (2014)

Electronic structure and optical band gap determination of NiFe2O4

Authors: Markus Meinert, Günter Reiss

Abstract: In a theoretical study we investigate the electronic structure and the band gap of the inverse spinel ferrite NiFe2O4. The experimental optical absorption spectrum is accurately reproduced by fitting the Tran-Blaha parameter in the modified Becke-Johnson potential. The accuracy of the commonly applied Tauc plot to find the optical gap is assessed based on the computed spectra and we find that this… ▽ More In a theoretical study we investigate the electronic structure and the band gap of the inverse spinel ferrite NiFe2O4. The experimental optical absorption spectrum is accurately reproduced by fitting the Tran-Blaha parameter in the modified Becke-Johnson potential. The accuracy of the commonly applied Tauc plot to find the optical gap is assessed based on the computed spectra and we find that this approach can lead to a misinterpretation of the experimental data. The minimum gap of NiFe2O4 is found to be a 1.53eV wide indirect gap, which is located in the minority spin channel. △ Less

Submitted 24 October, 2013; originally announced October 2013.

Comments: 4 pages, 4 figures

Journal ref: Journal of Physics: Condensed Matter 26, 115503 (2014)

High TMR ratio in Co2FeSi and Fe2CoSi based magnetic tunnel junctions

Authors: Christian Sterwerf, Markus Meinert, Jan-Michael Schmalhorst, Günter Reiss

Abstract: Magnetic tunnel junctions with Fe1+xCo2-xSi (0 < x < 1) electrodes and MgO barrier were prepared on MgO substrates by magnetron co-sputtering. Maximum tunnel magnetoresistance (TMR) ratios of 262 % at 15 K and 159 % at room temperature were observed for x=0.75. Correlations of the annealing temperature dependent atomic ordering and TMR amplitude are discussed. The high TMR for an intermediate stoi… ▽ More Magnetic tunnel junctions with Fe1+xCo2-xSi (0 < x < 1) electrodes and MgO barrier were prepared on MgO substrates by magnetron co-sputtering. Maximum tunnel magnetoresistance (TMR) ratios of 262 % at 15 K and 159 % at room temperature were observed for x=0.75. Correlations of the annealing temperature dependent atomic ordering and TMR amplitude are discussed. The high TMR for an intermediate stoichiometry is ascribed to the adjustment of the Fermi energy within a minority spin pseudo gap. △ Less

Submitted 9 August, 2013; originally announced August 2013.

Journal ref: Magnetics, IEEE Transactions on 49.7 (2013): 4386-4389

Phase separation in Fe2CrSi thin films

Authors: Markus Meinert, Torsten Hübner, Jan Schmalhorst, Günter Reiss, Elke Arenholz

Abstract: Thin films of a nominal Fe2CrSi alloy have been deposited by magnetron co-sputtering with various heat treatments on MgO and MgAl2O4 substrates. After heat treatment, the films were found to decompose into a nearly epitaxial Fe3Si film with the D0$_3$ structure and Cr3Si precipitates with the A15 structure. We explain the experimental results on the basis of ab initio calculations, which reveal th… ▽ More Thin films of a nominal Fe2CrSi alloy have been deposited by magnetron co-sputtering with various heat treatments on MgO and MgAl2O4 substrates. After heat treatment, the films were found to decompose into a nearly epitaxial Fe3Si film with the D0$_3$ structure and Cr3Si precipitates with the A15 structure. We explain the experimental results on the basis of ab initio calculations, which reveal that this decomposition is energetically highly favorable. △ Less

Submitted 9 February, 2014; v1 submitted 17 July, 2013; originally announced July 2013.

Comments: 4 pages, 4 figures

Journal ref: Journal of Applied Physics 114, 113908 (2013)

Phase stability of chromium based compensated ferrimagnets with inverse Heusler structure

Authors: Markus Meinert, Manuel Geisler

Abstract: Chromium based inverse Heusler compounds of the type Cr2YZ (Y=Co, Fe; Z=Al, Ga, In, Si, Ge, Sn) have been proposed as fully compensated half-metallic ferrimagnets. Such materials are of large interest for spintronics because they combine small magnetic moment with high spin polarization over a wide temperature range. We assess their thermodynamic stability by their formation enthalpies obtained fr… ▽ More Chromium based inverse Heusler compounds of the type Cr2YZ (Y=Co, Fe; Z=Al, Ga, In, Si, Ge, Sn) have been proposed as fully compensated half-metallic ferrimagnets. Such materials are of large interest for spintronics because they combine small magnetic moment with high spin polarization over a wide temperature range. We assess their thermodynamic stability by their formation enthalpies obtained from density functional theory calculations. All compounds under investigation are unstable. Cr2FeSi and Cr2CoAl are stable with respect to the elemental constituents, but decompose into binary phases. Cr2FeGe, Cr2CoGa, Cr2FeSn and Cr2CoIn are found to be unstable with respect to their elemental constituents. We identify possible binary decompositions. △ Less

Submitted 28 February, 2013; v1 submitted 11 February, 2013; originally announced February 2013.

Comments: 3 pages, 1 figure, 2 tables

Journal ref: Journal of Magnetism and Magnetic Materials 341, 72 (2013)

Modified Becke-Johnson potential investigation of half-metallic Heusler compounds

Authors: Markus Meinert

Abstract: We have investigated the electronic structures of various potentially half-metallic Heusler compounds with the Tran-Blaha modified Becke-Johnson (TB-mBJLDA) potential within the density functional theory. The half-metallic gaps are considerably enhanced with respect to values from the Perdew-Burke-Ernzerhof (PBE) functional. In particular the unoccupied densities of states are modified by mBJLDA,… ▽ More We have investigated the electronic structures of various potentially half-metallic Heusler compounds with the Tran-Blaha modified Becke-Johnson (TB-mBJLDA) potential within the density functional theory. The half-metallic gaps are considerably enhanced with respect to values from the Perdew-Burke-Ernzerhof (PBE) functional. In particular the unoccupied densities of states are modified by mBJLDA, and agreement with experiment is considerably worse than for PBE. The agreement of the densities of states can be improved by reducing the Tran-Blaha parameter c. However, ground state properties such as the hyperfine fields are more accurately described by PBE than by mBJLDA. Despite its success for ionic and covalent semiconductors and insulators, we conclude that mBJLDA is not a suitable approximation for half-metallic Heusler compounds. △ Less

Submitted 29 October, 2012; originally announced October 2012.

Comments: 7 pages, 3 figures, 3 tables

GW study of the half-metallic Heusler compounds Co2MnSi and Co2FeSi

Authors: Markus Meinert, Christoph Friedrich, Günter Reiss, Stefan Blügel

Abstract: Quasiparticle spectra of potentially half-metallic Co2MnSi and Co2FeSi Heusler compounds have been calculated within the one-shot GW approximation in an all-electron framework without adjustable parameters. For Co2FeSi the many-body corrections are crucial: a pseudogap opens and good agreement of the magnetic moment with experiment is obtained. Otherwise, however, the changes with respect to the d… ▽ More Quasiparticle spectra of potentially half-metallic Co2MnSi and Co2FeSi Heusler compounds have been calculated within the one-shot GW approximation in an all-electron framework without adjustable parameters. For Co2FeSi the many-body corrections are crucial: a pseudogap opens and good agreement of the magnetic moment with experiment is obtained. Otherwise, however, the changes with respect to the density-functional-theory starting point are moderate. For both cases we find that photoemission and x-ray absorption spectra are well described by the calculations. By comparison with the GW density of states, we conclude that the Kohn-Sham eigenvalue spectrum provides a reasonable approximation for the quasiparticle spectrum of the Heusler compounds considered in this work. △ Less

Submitted 17 October, 2012; originally announced October 2012.

Comments: 6 pages, 5 figures

Journal ref: Phys. Rev. B 86, 245115 (2012)

Negative spin polarization of Mn2VGa probed by tunnel magnetoresistance

Authors: Christoph Klewe, Markus Meinert, Jan Schmalhorst, Günter Reiss

Abstract: The ferrimagnetic Heusler compound Mn2VGa is predicted to have a pseudogap in the majority spin channel, which should lead to a negative tunnel magnetoresistance. We synthesized epitaxial Mn2VGa thin films on MgO(001) substrates by dc and rf magnetron co-sputtering, resulting in nearly stoichiometric films. XRD analysis revealed a mostly B2-ordered structure for the films deposited at substrate te… ▽ More The ferrimagnetic Heusler compound Mn2VGa is predicted to have a pseudogap in the majority spin channel, which should lead to a negative tunnel magnetoresistance. We synthesized epitaxial Mn2VGa thin films on MgO(001) substrates by dc and rf magnetron co-sputtering, resulting in nearly stoichiometric films. XRD analysis revealed a mostly B2-ordered structure for the films deposited at substrate temperatures of 350°C, 450°C, and 550°C. Magnetic tunnel junctions with MgO barrier and CoFe counter-electrodes were fabricated. After post-annealing at up to T_a=425°C negative TMR was obtained around zero bias, providing evidence for the inverted spin-polarization. Band structures of both electrodes were computed within the coherent potential approximation and used to calculate the TMR(V) characteristics, which are in good agreement with our experimental findings. △ Less

Submitted 10 October, 2012; originally announced October 2012.

Comments: 12 pages, 6 figures

Journal ref: J. Phys.: Condens. Matter 25, 076001 (2013)

Insights into the electronic structure of Co2FeSi from x-ray magnetic linear dichroism

Authors: Markus Meinert, Jan-Michael Schmalhorst, Manuel Glas, Günter Reiss, Elke Arenholz, Tim Böhnert, Kornelius Nielsch

Abstract: Experimental evidence both for and against a half-metallic ground-state of the Heusler compound Co2FeSi has been published. Density functional theory based calculations suggest a non half-metallic ground state. It has been argued, that on-site Coulomb interaction of the d electrons has to be taken into account via the LDA+U method, which predicts a half-metallic ground-state for U = 2.5...4.5 eV.… ▽ More Experimental evidence both for and against a half-metallic ground-state of the Heusler compound Co2FeSi has been published. Density functional theory based calculations suggest a non half-metallic ground state. It has been argued, that on-site Coulomb interaction of the d electrons has to be taken into account via the LDA+U method, which predicts a half-metallic ground-state for U = 2.5...4.5 eV. X-ray magnetic linear dichroism (XMLD) can be used as a tool to assess the appropriateness of the LDA+U approach: the calculated spectra within the LDA+U or GGA+U schemes are different from those within the LDA or GGA. Due to its ability to separate different orbital symmetries, XMLD allows us to distinguish between different models of the electronic structure of Co2FeSi. In this article we discuss experimental XMLD spectra and compare them with detailed first principles calculations. Our findings give evidence for the inadequacy of the LDA+U or GGA+U band structures, whereas constrained calculations with the GGA and a fixed spin moment of 6 μ_B give better overall agreement between experiment and theory. △ Less

Submitted 29 July, 2012; v1 submitted 30 January, 2012; originally announced January 2012.

Comments: 9 pages, 6 figures, 3 tables

Journal ref: Phys. Rev. B 86, 054420 (2012)

Itinerant and local magnetic moments in ferrimagnetic Mn2CoGa thin films probed by x-ray magnetic linear dichroism: experiment and ab initio theory

Authors: Markus Meinert, Jan-Michael Schmalhorst, Christoph Klewe, Günter Reiss, Elke Arenholz, Tim Böhnert, Kornelius Nielsch

Abstract: Epitaxial thin films of the half-metallic Xa-compound Mn2CoGa (Hg2CuTi prototype) were prepared by dc magnetron co-sputtering with different heat treatments on MgO (001) substrates. High-quality films with a bulk magnetization of 1.95(5)μ_B per unit cell were obtained. The L3,2 x-ray magnetic circular dichroism spectra agree with calculations based on density functional theory (DFT) and reveal the… ▽ More Epitaxial thin films of the half-metallic Xa-compound Mn2CoGa (Hg2CuTi prototype) were prepared by dc magnetron co-sputtering with different heat treatments on MgO (001) substrates. High-quality films with a bulk magnetization of 1.95(5)μ_B per unit cell were obtained. The L3,2 x-ray magnetic circular dichroism spectra agree with calculations based on density functional theory (DFT) and reveal the antiparallel alignment of the two inequivalent Mn moments. X-ray magnetic linear dichroism, in good agreement with theory as well, allows to distinguish between itinerant and local Mn moments. Based on non-collinear spin DFT it is shown that one of the two Mn moments has local character, whereas the other Mn moment and the Co moment are itinerant. △ Less

Submitted 21 September, 2011; v1 submitted 5 July, 2011; originally announced July 2011.

Comments: 5 pages, 4 figures

Journal ref: Physical Review B 84, 132405 (2011)

Ferrimagnetism and disorder in epitaxial Mn(2-x)Co(x)VAl thin films

Authors: Markus Meinert, Jan-Michael Schmalhorst, Günter Reiss, Elke Arenholz

Abstract: The quaternary full Heusler compound Mn(2-x)Co(x)VAl with x = 1 is predicted to be a half-metallic antiferromagnet. Thin films of the quaternary compounds with x = 0...2 were prepared by DC and RF magnetron co-sputtering on heated MgO (001) substrates. The magnetic structure was examined by x-ray magnetic circular dichroism and the chemical disorder was characterized by x-ray diffraction. Ferrimag… ▽ More The quaternary full Heusler compound Mn(2-x)Co(x)VAl with x = 1 is predicted to be a half-metallic antiferromagnet. Thin films of the quaternary compounds with x = 0...2 were prepared by DC and RF magnetron co-sputtering on heated MgO (001) substrates. The magnetic structure was examined by x-ray magnetic circular dichroism and the chemical disorder was characterized by x-ray diffraction. Ferrimagnetic coupling of V to Mn was observed for Mn2VAl (x = 0). For x = 0.5, we also found ferrimagnetic order with V and Co antiparallel to Mn. The observed reduced magnetic moments are interpreted with the help of band structure calculations in the coherent potential approximation. Mn2VAl is very sensitive to disorder involving Mn, because nearest-neighbor Mn atoms couple anti-ferromagnetically. Co2VAl has B2 order and has reduced magnetization. In the cases with x >= 0.9 conventional ferromagnetism was observed, closely related to the atomic disorder in these compounds. △ Less

Submitted 31 January, 2011; originally announced January 2011.

Comments: 10 pages, 4 figures

Journal ref: Meinert et al., J. Phys. D: Appl. Phys. 44, 215003 (2011)

Exchange interactions and Curie temperatures in Mn2CoZ compounds

Authors: Markus Meinert, Jan-Michael Schmalhorst, Günter Reiss

Abstract: The generalized Heusler compounds Mn2CoZ (Z = Al, Ga, In, Si, Ge, Sn, Sb) with the Hg2CuTi structure are of large interest due to their half-metallic ferrimagnetism. The complex magnetic interactions between the constituents are studied by first principles calculations of the Heisenberg exchange coupling parameters, and Curie temperatures are calculated from those. Due to the direct Mn-Mn exchange… ▽ More The generalized Heusler compounds Mn2CoZ (Z = Al, Ga, In, Si, Ge, Sn, Sb) with the Hg2CuTi structure are of large interest due to their half-metallic ferrimagnetism. The complex magnetic interactions between the constituents are studied by first principles calculations of the Heisenberg exchange coupling parameters, and Curie temperatures are calculated from those. Due to the direct Mn-Mn exchange interaction in Mn2CoZ, the Curie temperature decreases, while the total moment increases when changing Z from one group to another. The exchange interactions are dominated by a strong direct exchange between Co and its nearest neighbor Mn on the B site, which is nearly constant. The coupling between the nearest-neighbor Mn atoms scales with the magnetic moment of the Mn atom on the C site. Calculations with different lattice parameters suggest a negative pressure dependence of the Curie temperature, which follows from decreasing magnetic moments. Curie temperatures of more than 800 K are predicted for Mn2CoAl (890 K), Mn2CoGa (886 K), and Mn2CoIn (845 K). △ Less

Submitted 15 December, 2010; originally announced December 2010.

Comments: 12 pages, 3 figures

Journal ref: M. Meinert et al 2011 J. Phys.: Condens. Matter 23 116005

Structural and magnetic properties of Co-Mn-Sb thin films

Authors: Markus Meinert, Jan-Michael Schmalhorst, Daniel Ebke, Ning-Ning Liu, Andy Thomas, Günter Reiss, Jaroslaw Kanak, Tomasz Stobiecki, Elke Arenholz

Abstract: Thin Co-Mn-Sb films of different compositions were investigated and utilized as electrodes in alumina based magnetic tunnel junctions with CoFe counter electrode. The preparation conditions were optimized with respect to magnetic and structural properties. The Co-Mn-Sb/Al-O interface was analyzed by X-ray absorption spectroscopy and magnetic circular dichroism with particular focus on the element-… ▽ More Thin Co-Mn-Sb films of different compositions were investigated and utilized as electrodes in alumina based magnetic tunnel junctions with CoFe counter electrode. The preparation conditions were optimized with respect to magnetic and structural properties. The Co-Mn-Sb/Al-O interface was analyzed by X-ray absorption spectroscopy and magnetic circular dichroism with particular focus on the element-specific magnetic moments. Co-Mn-Sb crystallizes in different complex cubic structures depending on its composition. The magnetic moments of Co and Mn are ferromagnetically coupled in all cases. A tunnel magneto resistance ratio of up to 24 % at 13K was found and indicates that Co-Mn-Sb is not a ferromagnetic half-metal. These results are compared to recent works on the structure and predictions of the electronic properties. △ Less

Submitted 11 November, 2010; originally announced November 2010.

Comments: 8 pages, 9 figures

Journal ref: Meinert et al., J. Appl. Phys. 107, 063901 (2010)

Influence of tetragonal distortion on the magnetic and electronic properties of the Heusler compound Co2TiSn from first principles

Authors: Markus Meinert, Jan-Michael Schmalhorst, Günter Reiss

Abstract: Using the full potential linearized augmented plane wave plus local orbitals method we determine ab-initio the lattice parameters of tetragonally distorted Co2TiSn in the L21 structure. The tetragonal lattice parameter c is determined as a function of the lattice parameter a by energy minimization. The change in total energy is found to be only a few $k_B T$ with respect to room temperature. The s… ▽ More Using the full potential linearized augmented plane wave plus local orbitals method we determine ab-initio the lattice parameters of tetragonally distorted Co2TiSn in the L21 structure. The tetragonal lattice parameter c is determined as a function of the lattice parameter a by energy minimization. The change in total energy is found to be only a few $k_B T$ with respect to room temperature. The spin polarizations as well as the magnetizations are stable against small lattice distortions. It is shown, that the volume is not constant upon distortion and that the volume change is related with significant changes in the magnetization and the gap energy. △ Less

Submitted 11 November, 2010; originally announced November 2010.

Comments: 3 pages, 4 figures

Journal ref: M. Meinert, J. M. Schmalhorst, and G. Reiss, Appl. Phys. Lett. 97, 012501 (2010)

Ab initio prediction of ferrimagnetism, exchange interactions and Curie temperatures in Mn2TiZ Heusler compounds

Authors: Markus Meinert, Jan-Michael Schmalhorst, Günter Reiss

Abstract: The Heusler compounds Mn$_2$TiZ (Z = Al, Ga, In, Si, Ge, Sn, P, As, Sb) are of large interest due to their potential ferrimagnetic properties and high spin polarization. Here, we present calculations of the structural and magnetic properties of these materials. Their magnetic moment follows the Slater-Pauling rule $m = N_V - 24$. None of them is actually a perfect half-metallic ferrimagnet, but so… ▽ More The Heusler compounds Mn$_2$TiZ (Z = Al, Ga, In, Si, Ge, Sn, P, As, Sb) are of large interest due to their potential ferrimagnetic properties and high spin polarization. Here, we present calculations of the structural and magnetic properties of these materials. Their magnetic moment follows the Slater-Pauling rule $m = N_V - 24$. None of them is actually a perfect half-metallic ferrimagnet, but some exhibit more than 90% spin polarization and Curie temperatures well above room temperature. The exchange interactions are complex, direct and indirect exchange contributions are identified. The Curie temperature scales with the total magnetic moment, and it has a positive pressure dependence. The role of the Z element is investigated: it influences the properties of the compounds mainly via its valence electron number and its atomic radius, which determines the lattice parameter. Based on these results, Mn$_2$TiSi, Mn$_2$TiGe, and Mn$_2$TiSn are proposed as candidates for spintronic applications. △ Less

Submitted 10 November, 2010; originally announced November 2010.

Comments: 13 pages, 6 figures

Journal ref: M Meinert et al 2011 J. Phys.: Condens. Matter 23 036001

Electronic structure of fully epitaxial Co2TiSn thin films

Authors: Markus Meinert, Jan-Michael Schmalhorst, Hendrik Wulfmeier, Günter Reiss, Elke Arenholz, Tanja Graf, Claudia Felser

Abstract: In this article we report on the properties of thin films of the full Heusler compound Co2TiSn prepared by DC magnetron co-sputtering. Fully epitaxial, stoichiometric films were obtained by deposition on MgO (001) substrates at substrate temperatures above 600°C. The films are well ordered in the L21 structure, and the Curie temperature exceeds slightly the bulk value. They show a significant, iso… ▽ More In this article we report on the properties of thin films of the full Heusler compound Co2TiSn prepared by DC magnetron co-sputtering. Fully epitaxial, stoichiometric films were obtained by deposition on MgO (001) substrates at substrate temperatures above 600°C. The films are well ordered in the L21 structure, and the Curie temperature exceeds slightly the bulk value. They show a significant, isotropic magnetoresistance and the resistivity becomes strongly anomalous in the paramagnetic state. The films are weakly ferrimagnetic, with nearly 1 μ_B on the Co atoms, and a small antiparallel Ti moment, in agreement with theoretical expectations. From comparison of x-ray absorption spectra on the Co L3/L2 edges, including circular and linear magnetic dichroism, with ab initio calculations of the x-ray absorption and circular dichroism spectra we infer that the electronic structure of Co2TiSn has essentially non-localized character. Spectral features that have not been explained in detail before, are explained here in terms of the final state band structure. △ Less

Submitted 27 October, 2010; originally announced October 2010.

Comments: 11 pages, 8 figures

Journal ref: Meinert et al., Phys. Rev. B 83, 064412 (2011)

Fabrication of superconducting MgB2 thin films by magnetron co-sputtering on (001) MgO substrates

Authors: Savio Fabretti, Patrick Thomas, Markus Meinert, Andy Thomas

Abstract: We fabricated superconducting MgB2 thin films on (001) MgO substrates. The samples were prepared by magnetron rf and dc co-sputtering on heated substrates. They were annealed ex-situ for one hour at temperatures between 450°C and 750°C. We will show that the substrate temperature during the sputtering process and the post annealing temperatures play a crucial role in forming MgB2 superconducting t… ▽ More We fabricated superconducting MgB2 thin films on (001) MgO substrates. The samples were prepared by magnetron rf and dc co-sputtering on heated substrates. They were annealed ex-situ for one hour at temperatures between 450°C and 750°C. We will show that the substrate temperature during the sputtering process and the post annealing temperatures play a crucial role in forming MgB2 superconducting thin films. We achieved a critical onset temperature of 27.1K for a film thickness of 30nm. The crystal structures were measured by x-ray diffraction. △ Less

Submitted 26 October, 2010; v1 submitted 19 August, 2010; originally announced August 2010.