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Time reversal symmetry breaking superconductivity in topological materials
Authors:
Yunsheng Qiu,
Kyle Nocona Sanders,
Jixia Dai,
Julia E. Medvedeva,
Weida Wu,
Pouyan Ghaemi,
Thomas Vojta,
Yew San Hor
Abstract:
Fascinating phenomena have been known to arise from the Dirac theory of relativistic quantum mechanics, which describes high energy particles having linear dispersion relations. Electrons in solids usually have non-relativistic dispersion relations but their quantum excitations can mimic relativistic effects. In topological insulators, electrons have both a linear dispersion relation, the Dirac be…
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Fascinating phenomena have been known to arise from the Dirac theory of relativistic quantum mechanics, which describes high energy particles having linear dispersion relations. Electrons in solids usually have non-relativistic dispersion relations but their quantum excitations can mimic relativistic effects. In topological insulators, electrons have both a linear dispersion relation, the Dirac behavior, on the surface and a non-relativistic energy dispersion in the bulk. Topological phases of matter have attracted much interest, particularly broken-symmetry phases in topological insulator materials. Here, we report by Nb doping that the topological insulator Bi2Se3 can be turned into a bulk type-II superconductor while the Dirac surface dispersion in the normal state is preserved. A macroscopic magnetic ordering appears below the superconducting critical temperature of 3.2 K indicating a spontaneous spin rotation symmetry breaking of the Nb magnetic moments. Even though such a magnetic order may appear at the edge of the superconductor, it is mediated by superconductivity and presents a novel phase of matter which gives rise to a zero-field Hall effect.
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Submitted 10 December, 2015;
originally announced December 2015.
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Work hardening behavior in a steel with multiple TRIP mechanisms
Authors:
M. C. McGrath,
D. C. Van Aken,
N. I. Medvedeva,
J. E. Medvedeva
Abstract:
Transformation induced plasticity (TRIP) behavior was studied in steel with composition Fe-0.07C-2.85Si-15.3Mn-2.4Al-0.017N that exhibited two TRIP mechanisms. The initial microstructure consisted of both ε- and α-martensites with 27% retained austenite. TRIP behavior in the first 5% strain was predominately austenite transforming to ε-martensite (Stage I), but upon saturation of Stage I, the ε-ma…
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Transformation induced plasticity (TRIP) behavior was studied in steel with composition Fe-0.07C-2.85Si-15.3Mn-2.4Al-0.017N that exhibited two TRIP mechanisms. The initial microstructure consisted of both ε- and α-martensites with 27% retained austenite. TRIP behavior in the first 5% strain was predominately austenite transforming to ε-martensite (Stage I), but upon saturation of Stage I, the ε-martensite transformed to α-martensite (Stage II). Alloy segregation also affected the TRIP behavior with alloy rich regions producing TRIP just prior to necking. This behavior was explained by first principle calculations that revealed aluminum significantly affected the stacking fault energy in Fe-Mn-Al-C steels by decreasing the unstable stacking fault energy and promoting easy nucleation of ε-martensite. The addition of aluminum also raised the intrinsic stacking fault energy and caused the ε-martensite to be unstable and transform to α-martensite under further deformation. The two stage TRIP behavior produced a high strain hardening exponent of 1.4 and led to ultimate tensile strength of 1165 MPa and elongation to failure of 35%.
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Submitted 15 September, 2012;
originally announced September 2012.
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First-principles study of the Mn, Al and C distribution and their effect on the stacking fault energies in austenite
Authors:
N. I. Medvedeva,
M. S. Park,
D. C. Van Aken,
J. E. Medvedeva
Abstract:
We present ab-initio simulation of manganese, aluminum and carbon impurities in austenite and demonstrate their inhomogeneous distribution, which involves the repulsion of interstitial carbon atoms, the formation of bonded Mn-C pairs as well as a short range Al-ordering of D03-type. The mechanisms for the formation of stacking faults in Fe-Mn-Al-C are considered, and we find that the impurities ha…
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We present ab-initio simulation of manganese, aluminum and carbon impurities in austenite and demonstrate their inhomogeneous distribution, which involves the repulsion of interstitial carbon atoms, the formation of bonded Mn-C pairs as well as a short range Al-ordering of D03-type. The mechanisms for the formation of stacking faults in Fe-Mn-Al-C are considered, and we find that the impurities have influence on the stacking fault energies only when located within a few interatomic layers near stacking fault. As a result, the stacking fault energy does not depend on the average concentration of impurities in matrix, but is highly sensitive to the concentration of the impurities in the vicinity of stacking fault defect. We predict that manganese shows a slight tendency for segregation near SF, while carbon prefers to be located far from the stacking fault region. Both aluminum and carbon impurities linearly increase the SFE, while the formation of Mn-C pairs and short range Al-ordering restrain the SFE growth. Short range order in Fe-Al-C alloys strongly affects the energy barrier for nucleation of dislocations and may lead to softening phenomenon.
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Submitted 1 August, 2012;
originally announced August 2012.
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Electronic properties of layered multicomponent wide-bandgap oxides: a combinatorial approach
Authors:
A. Murat,
J. E. Medvedeva
Abstract:
The structural, electronic, and optical properties of twelve multicomponent oxides with layered structure, RAMO$_4$, where R$^{3+}$=In or Sc; A$^{3+}$=Al or Ga; and M$^{2+}$=Ca, Cd, Mg, or Zn, are investigated using first-principles density functional approach. The compositional complexity of RAMO$_4$ leads to a wide range of band gap values varying from 2.45 eV for InGaCdO$_4$ to 6.29 eV for ScAl…
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The structural, electronic, and optical properties of twelve multicomponent oxides with layered structure, RAMO$_4$, where R$^{3+}$=In or Sc; A$^{3+}$=Al or Ga; and M$^{2+}$=Ca, Cd, Mg, or Zn, are investigated using first-principles density functional approach. The compositional complexity of RAMO$_4$ leads to a wide range of band gap values varying from 2.45 eV for InGaCdO$_4$ to 6.29 eV for ScAlMgO$_4$. Strikingly, despite the different band gaps in the oxide constituents, namely, 2-4 eV in CdO, In$_2$O$_3$, or ZnO; 5-6 for Ga$_2$O$_3$ or Sc$_2$O$_3$; and 7-9 eV in CaO, MgO, or Al$_2$O$_3$, the bottom of the conduction band in the multicomponent oxides is formed from the s-states of all cations and their neighboring oxygen p-states. We show that the hybrid nature of the conduction band in multicomponent oxides originates from the unusual five-fold atomic coordination of A$^{3+}$ and M$^{2+}$ cations which enables the interaction between the spatially-spread s-orbitals of adjacent cations via shared oxygen atoms. The effect of the local atomic coordination on the band gap, the electron effective mass, the orbital composition of the conduction band, and the expected (an)isotropic character of the electron transport in layered RAMO$_4$ is thoroughly discussed.
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Submitted 29 November, 2011;
originally announced November 2011.
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Tuning the properties of complex transparent conducting oxides: role of crystal symmetry, chemical composition and carrier generation
Authors:
Julia E. Medvedeva,
Chaminda L. Hettiarachchi
Abstract:
The electronic properties of single- and multi-cation transparent conducting oxides (TCOs) are investigated using first-principles density functional approach. A detailed comparison of the electronic band structure of stoichiometric and oxygen deficient In$_2$O$_3$, $α$- and $β$-Ga$_2$O$_3$, rock salt and wurtzite ZnO, and layered InGaZnO$_4$ reveals the role of the following factors which gover…
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The electronic properties of single- and multi-cation transparent conducting oxides (TCOs) are investigated using first-principles density functional approach. A detailed comparison of the electronic band structure of stoichiometric and oxygen deficient In$_2$O$_3$, $α$- and $β$-Ga$_2$O$_3$, rock salt and wurtzite ZnO, and layered InGaZnO$_4$ reveals the role of the following factors which govern the transport and optical properties of these TCO materials: (i) the crystal symmetry of the oxides, including both the oxygen coordination and the long-range structural anisotropy; (ii) the electronic configuration of the cation(s), specifically, the type of orbital(s) -- $s$, $p$ or $d$ -- which form the conduction band; and (iii) the strength of the hybridization between the cation's states and the p-states of the neighboring oxygen atoms. The results not only explain the experimentally observed trends in the electrical conductivity in the single-cation TCO, but also demonstrate that multicomponent oxides may offer a way to overcome the electron localization bottleneck which limits the charge transport in wide-bandgap main-group metal oxides. Further, the advantages of aliovalent substitutional doping -- an alternative route to generate carriers in a TCO host -- are outlined based on the electronic band structure calculations of Sn, Ga, Ti and Zr-doped InGaZnO$_4$. We show that the transition metal dopants offer a possibility to improve conductivity without compromising the optical transmittance.
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Submitted 25 February, 2010;
originally announced February 2010.
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First-principles investigation of uranium monochalcogenides
Authors:
A. O. Shorikov,
J. E. Medvedeva,
A. I. Poteryaev,
V. V. Mazurenko,
V. I. Anisimov
Abstract:
We present first-principles investigation of the electronic structure and magnetic properties of uranium monochalcogenides: US, USe, UTe. The calculations were performed by using recently developed LDA+U+SO method in which both Coulomb and spin-orbit interactions have been taken into account in rotationally invariant form. We discuss the problem of choice of the Coulomb interaction value. The ca…
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We present first-principles investigation of the electronic structure and magnetic properties of uranium monochalcogenides: US, USe, UTe. The calculations were performed by using recently developed LDA+U+SO method in which both Coulomb and spin-orbit interactions have been taken into account in rotationally invariant form. We discuss the problem of choice of the Coulomb interaction value. The calculated [111] easy axes agree with those experimentally observed. The electronic configuration 5$f^3$ was found for all uranium compounds under investigation.
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Submitted 25 December, 2009;
originally announced December 2009.
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Electronic band structure and carrier effective mass in calcium aluminates
Authors:
J. E. Medvedeva,
E. N. Teasley,
M. D. Hoffman
Abstract:
First-principles electronic band structure investigations of five compounds of the CaO-Al2O3 family, 3CaO.Al2O3, 12CaO.7Al2O3, CaO.Al2O3, CaO.2Al2O3 and CaO.6Al2O3, as well as CaO and alpha-, theta- and kappa-Al2O3 are performed. We find that the conduction band in the complex oxides is formed from the oxygen antibonding p-states and, although the band gap in Al2O3 is almost twice larger than in…
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First-principles electronic band structure investigations of five compounds of the CaO-Al2O3 family, 3CaO.Al2O3, 12CaO.7Al2O3, CaO.Al2O3, CaO.2Al2O3 and CaO.6Al2O3, as well as CaO and alpha-, theta- and kappa-Al2O3 are performed. We find that the conduction band in the complex oxides is formed from the oxygen antibonding p-states and, although the band gap in Al2O3 is almost twice larger than in CaO, the s-states of both cations. Such a hybrid nature of the conduction band leads to isotropic electron effective masses which are nearly the same for all compounds investigated. This insensitivity of the effective mass to variations in the composition and structure suggests that upon a proper degenerate doping, both amorphous and crystalline phases of the materials will possess mobile extra electrons.
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Submitted 13 June, 2007;
originally announced June 2007.
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Averaging of the electron effective mass in multicomponent transparent conducting oxides
Authors:
J. E. Medvedeva
Abstract:
We find that layered materials composed of various oxides of cations with $s^2$ electronic configuration, $XY_2$O$_4$, $X$=In or Sc, $Y$=Ga, Zn, Al, Cd and/or Mg, exhibit isotropic electron effective mass which can be obtained via averaging over those of the corresponding single-cation oxide constituents. This effect is due to a hybrid nature of the conduction band formed from the s-states of {\…
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We find that layered materials composed of various oxides of cations with $s^2$ electronic configuration, $XY_2$O$_4$, $X$=In or Sc, $Y$=Ga, Zn, Al, Cd and/or Mg, exhibit isotropic electron effective mass which can be obtained via averaging over those of the corresponding single-cation oxide constituents. This effect is due to a hybrid nature of the conduction band formed from the s-states of {\it all} cations and the oxygen p-states. Moreover, the observed insensitivity of the electron effective mass to the oxygen coordination and to the distortions in the cation-oxygen chains suggests that similar behavior can be expected in technologically important amorphous state. These findings significantly broaden the range of materials as efficient transparent conductor hosts.
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Submitted 19 April, 2007; v1 submitted 11 April, 2007;
originally announced April 2007.
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Unconventional approaches to combine optical transparency with electrical conductivity
Authors:
J. E. Medvedeva
Abstract:
Combination of electrical conductivity and optical transparency in the same material -- known to be a prerogative of only a few oxides of post-transition metals, such as In, Sn, Zn and Cd -- manifests itself in a distinctive band structure of the transparent conductor host. While the oxides of other elements with $s^2$ electronic configuration, for example, Mg, Ca, Sc and Al, also exhibit the de…
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Combination of electrical conductivity and optical transparency in the same material -- known to be a prerogative of only a few oxides of post-transition metals, such as In, Sn, Zn and Cd -- manifests itself in a distinctive band structure of the transparent conductor host. While the oxides of other elements with $s^2$ electronic configuration, for example, Mg, Ca, Sc and Al, also exhibit the desired optical and electronic features, they have not been considered as candidates for achieving good electrical conductivity because of the challenges of efficient carrier generation in these wide-bandgap materials. Here we demonstrate that alternative approaches to the problem not only allow attaining the transport and optical properties which compete with those in currently utilized transparent conducting oxides (TCO), but also significantly broaden the range of materials with a potential of being developed into novel functional transparent conductors.
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Submitted 11 April, 2007;
originally announced April 2007.
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Magnetically Mediated Transparent Conductors: In$_2$O$_3$ doped with Mo
Authors:
J. E. Medvedeva
Abstract:
First-principles band structure investigations of the electronic, optical and magnetic properties of Mo-doped In$_2$O$_3$ reveal the vital role of magnetic interactions in determining both the electrical conductivity and the Burstein-Moss shift which governs optical absorption. We demonstrate the advantages of the transition metal doping which results in smaller effective mass, larger fundamenta…
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First-principles band structure investigations of the electronic, optical and magnetic properties of Mo-doped In$_2$O$_3$ reveal the vital role of magnetic interactions in determining both the electrical conductivity and the Burstein-Moss shift which governs optical absorption. We demonstrate the advantages of the transition metal doping which results in smaller effective mass, larger fundamental band gap and better overall optical transmission in the visible -- as compared to commercial Sn-doped In$_2$O$_3$. Similar behavior is expected upon doping with other transition metals opening up an avenue for the family of efficient transparent conductors mediated by magnetic interactions.
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Submitted 2 August, 2006; v1 submitted 18 May, 2006;
originally announced May 2006.
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Tunable Conductivity and Conduction Mechanism in a UV light activated electronic conductor
Authors:
M. I. Bertoni,
T. O. Mason,
J. E. Medvedeva,
A. J. Freeman,
K. R. Poeppelmeier,
B. Delley
Abstract:
A tunable conductivity has been achieved by controllable substitution of a novel UV light activated electronic conductor. The transparent conducting oxide system H-doped Ca12-xMgxAl14O33 (x = 0; 0.1; 0.3; 0.5; 0.8; 1.0) presents a conductivity that is strongly dependent on the substitution level and temperature. Four-point dc-conductivity decreases with x from 0.26 S/cm (x = 0) to 0.106 S/cm (x…
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A tunable conductivity has been achieved by controllable substitution of a novel UV light activated electronic conductor. The transparent conducting oxide system H-doped Ca12-xMgxAl14O33 (x = 0; 0.1; 0.3; 0.5; 0.8; 1.0) presents a conductivity that is strongly dependent on the substitution level and temperature. Four-point dc-conductivity decreases with x from 0.26 S/cm (x = 0) to 0.106 S/cm (x = 1) at room temperature. At each composition the conductivity increases (reversibly with temperature) until a decomposition temperature is reached; above this value, the conductivity drops dramatically due to hydrogen recombination and loss. The observed conductivity behavior is consistent with the predictions of our first principles density functional calculations for the Mg-substituted system with x=0, 1 and 2. The Seebeck coefficient is essentially composition- and temperature-independent, the later suggesting the existence of an activated mobility associated with small polaron conduction. The optical gap measured remains constant near 2.6 eV while transparency increases with the substitution level, concomitant with a decrease in carrier content.
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Submitted 1 November, 2004;
originally announced November 2004.
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Half-metallicity and efficient spin injection in AlN/GaN:Cr (0001) heterostructure
Authors:
J. E. Medvedeva,
A. J. Freeman,
X. Y. Cui,
C. Stampfl,
N. Newman
Abstract:
First-principles investigations of the structural, electronic and magnetic properties of Cr-doped AlN/GaN (0001) heterostructures reveal that Cr segregates into the GaN region, that these interfaces retain their important half-metallic character and thus yield efficient (100 %) spin polarized injection from a ferromagnetic GaN:Cr electrode through an AlN tunnel barrier - whose height and width c…
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First-principles investigations of the structural, electronic and magnetic properties of Cr-doped AlN/GaN (0001) heterostructures reveal that Cr segregates into the GaN region, that these interfaces retain their important half-metallic character and thus yield efficient (100 %) spin polarized injection from a ferromagnetic GaN:Cr electrode through an AlN tunnel barrier - whose height and width can be controlled by adjusting the Al concentration in the graded bandgap engineered Al(1-x)Ga(x)N (0001) layers.
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Submitted 18 October, 2004;
originally announced October 2004.
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Electronic structure properties and BCS superconductivity in beta-pyrochlore oxides: KOs_2O_6
Authors:
R. Saniz,
J. E. Medvedeva,
Lin-Hui Ye,
T. Shishidou,
A. J. Freeman
Abstract:
We report a first-principles density-functional calculation of the electronic structure and properties of the recently discovered superconducting beta-pyrochlore oxide KOs_2O_6. We find that the electronic structure near the Fermi energy E_F is dominated by strongly hybridized Os-5d and O-2p states. A van Hove singularity very close to E_F leads to a relatively large density of states at E_F, an…
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We report a first-principles density-functional calculation of the electronic structure and properties of the recently discovered superconducting beta-pyrochlore oxide KOs_2O_6. We find that the electronic structure near the Fermi energy E_F is dominated by strongly hybridized Os-5d and O-2p states. A van Hove singularity very close to E_F leads to a relatively large density of states at E_F, and the Fermi surface exhibits strong nesting along several directions. These features could provide the scattering processes leading to the observed anomalous temperature dependence of the resistivity and to the rather large specific heat mass enhancement we obtain from the calculated density of states and the observed specific heat coefficient. An estimate of T_c within the framework of the BCS theory of superconductivity taking into account the possible effects of spin fluctuations arising from nesting yields the experimental value.
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Submitted 22 June, 2004;
originally announced June 2004.
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Combining high conductivity with complete optical transparency: A band-structure approach
Authors:
J. E. Medvedeva,
A. J. Freeman
Abstract:
A comparison of the structural, optical and electronic properties of the recently discovered transparent conducting oxide (TCO), nanoporous Ca12Al14O33, with those of the conventional TCO's (such as Sc-doped CdO) indicates that this material belongs conceptually to a new class of transparent conductors. For this class of materials, we formulate criteria for the successful combination of high ele…
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A comparison of the structural, optical and electronic properties of the recently discovered transparent conducting oxide (TCO), nanoporous Ca12Al14O33, with those of the conventional TCO's (such as Sc-doped CdO) indicates that this material belongs conceptually to a new class of transparent conductors. For this class of materials, we formulate criteria for the successful combination of high electrical conductivity with complete transparency in the visible range. Our analysis suggests that this set of requirements can be met for a group of novel materials called electrides.
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Submitted 14 May, 2004;
originally announced May 2004.
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Hopping versus bulk conductivity in transparent oxides: 12CaO.7Al2O3
Authors:
J. E. Medvedeva,
A. J. Freeman
Abstract:
First-principles calculations of the mayenite-based oxide, [Ca12Al14O32]{2+}(2e-), reveal the mechanism responsible for its high conductivity. A detailed comparison of the electronic and optical properties of this material with those of the recently discovered novel transparent conducting oxide, H-doped UV-activated Ca12Al14O33, allowed us to conclude that the enhanced conductivity in [Ca12Al14O…
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First-principles calculations of the mayenite-based oxide, [Ca12Al14O32]{2+}(2e-), reveal the mechanism responsible for its high conductivity. A detailed comparison of the electronic and optical properties of this material with those of the recently discovered novel transparent conducting oxide, H-doped UV-activated Ca12Al14O33, allowed us to conclude that the enhanced conductivity in [Ca12Al14O32]{2+}(2e-) is achieved by elimination of the Coulomb blocade of the charge carriers. This results in a transition from variable range hopping behavior with a Coulomb gap in H-doped UV-irradiated Ca12Al14O33 to bulk conductivity in [Ca12Al14O32]{2+}(2e-). Further, the high degree of the delocalization of the conduction electrons obtained in [Ca12Al14O32]{2+}(2e-) indicate that it cannot be classified as an electride, originally suggested.
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Submitted 7 April, 2004;
originally announced April 2004.
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Electronic structure and light-induced conductivity in a transparent refractory oxide
Authors:
J. E. Medvedeva,
A. J. Freeman,
M. I. Bertoni,
T. O. Mason
Abstract:
Combined first-principles and experimental investigations reveal the underlying mechanism responsible for a drastic change of the conductivity (by 10 orders of magnitude) following hydrogen annealing and UV-irradiation in a transparent oxide, 12CaO.7Al2O3, found by Hayashi et al. The charge transport associated with photo-excitation of an electron from H, occurs by electron hopping. We identify…
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Combined first-principles and experimental investigations reveal the underlying mechanism responsible for a drastic change of the conductivity (by 10 orders of magnitude) following hydrogen annealing and UV-irradiation in a transparent oxide, 12CaO.7Al2O3, found by Hayashi et al. The charge transport associated with photo-excitation of an electron from H, occurs by electron hopping. We identify the atoms participating in the hops, determine the exact paths for the carrier migration, estimate the temperature behavior of the hopping transport and predict a way to enhance the conductivity by specific doping.
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Submitted 9 February, 2004;
originally announced February 2004.
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Orbital Ordering in Paramagnetic LaMnO3 and KCuF3
Authors:
J. E. Medvedeva,
M. A. Korotin,
V. I. Anisimov,
A. J. Freeman
Abstract:
{\it Ab-initio} studies of the stability of orbital ordering, its coupling to magnetic structure and its possible origins (electron-phonon and/or electron-electron interactions) are reported for two perovskite systems, LaMnO$_3$ and KCuF$_3$. We present a new Average Spin State (ASS) calculational scheme that allowed us to treat a paramagnetic state. Using this scheme, we succesfully described t…
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{\it Ab-initio} studies of the stability of orbital ordering, its coupling to magnetic structure and its possible origins (electron-phonon and/or electron-electron interactions) are reported for two perovskite systems, LaMnO$_3$ and KCuF$_3$. We present a new Average Spin State (ASS) calculational scheme that allowed us to treat a paramagnetic state. Using this scheme, we succesfully described the experimental magnetic/orbital phase diagram of both LaMnO$_3$ and KCuF$_3$ in crystal structures when the Jahn-Teller distortions are neglected. Hence, we conclude that the orbital ordering in both compounds is purely electronic in origin.
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Submitted 15 March, 2002; v1 submitted 21 December, 2001;
originally announced December 2001.
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Electric field gradients in s-, p- and d-metal diborides and the effect of pressure on the band structure and T$_c$ in MgB$_2$
Authors:
N. I. Medvedeva,
A. L. Ivanovskii,
J. E. Medvedeva,
A. J. Freeman,
D. L. Novikov
Abstract:
Results of FLMTO-GGA (full-potential linear muffin-tin orbital -- generalized gradient approximation) calculations of the band structure and boron electric field gradients (EFG) for the new medium-T$_c$ superconductor (MTSC), MgB$_2$, and related diborides MB$_2$, M=Be, Al, Sc, Ti, V, Cr, Mo and Ta are reported. The boron EFG variations are found to be related to specific features of their band…
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Results of FLMTO-GGA (full-potential linear muffin-tin orbital -- generalized gradient approximation) calculations of the band structure and boron electric field gradients (EFG) for the new medium-T$_c$ superconductor (MTSC), MgB$_2$, and related diborides MB$_2$, M=Be, Al, Sc, Ti, V, Cr, Mo and Ta are reported. The boron EFG variations are found to be related to specific features of their band structure and particularly to the M-B hybridization. The strong charge anisotropy at the B site in MgB$_2$ is completely defined by the valence electrons - a property which sets MgB$_2$ apart from other diborides. The boron EFG in MgB$_2$ is weakly dependent of applied pressure: the B p electron anisotropy increases with pressure, but it is partly compensated by the increase of core charge assymetry. The concentration of holes in bonding $σ$ bands is found to decrease slightly from 0.067 to 0.062 holes/B under a pressure of 10 GPa. Despite a small decrease of N(E$_F$), the Hopfield parameter increases with pressure and we believe that the main reason for the reduction under pressure of the superconducting transition temperature, T$_c$, is the strong pressure dependence of phonon frequencies, which is sufficient to compensate the electronic effects.
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Submitted 6 November, 2001; v1 submitted 18 April, 2001;
originally announced April 2001.
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Coulomb correlation and magnetic ordering in double-layered manganites: LaSr$_2$Mn$_2$O$_7$
Authors:
Julia E. Medvedeva,
Vladimir I. Anisimov,
Michael A. Korotin,
Oleg N. Mryasov,
Arthur J. Freeman
Abstract:
A detailed study of the electronic structure and magnetic configurations of the 50 % hole-doped double layered manganite LaSr$_2$Mn$_2$O$_7$ is presented. We demonstrate that the on-site Coulomb correlation (U) of Mn d electrons {\it (i)} significantly modifies the electronic structure, magnetic ordering (from FM to AFM), and interlayer exchange interactions, and {\it (ii)} promotes strong aniso…
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A detailed study of the electronic structure and magnetic configurations of the 50 % hole-doped double layered manganite LaSr$_2$Mn$_2$O$_7$ is presented. We demonstrate that the on-site Coulomb correlation (U) of Mn d electrons {\it (i)} significantly modifies the electronic structure, magnetic ordering (from FM to AFM), and interlayer exchange interactions, and {\it (ii)} promotes strong anisotropy in electrical transport, reducing the effective hopping parameter along the {\it c} axis for electrically active $e_g$ electrons. This findng is consistent with observations of anisotropic transport -- a property which sets this manganite apart from conventional 3D systems. A half-metallic band structure is predicted with both the LSDA and LSDA+U methods. The experimentally observed A-type AFM ordering in LaSr$_2$Mn$_2$O$_7$ is found to be energetically more favorable with U $\geq$ 7 eV. A simple interpretation of interlayer exchange coupling is given within double and super-exchange mechanisms based on the dependencies on U of the effective exchange parameters and $e_g$ state sub-band widths.
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Submitted 17 April, 2001;
originally announced April 2001.
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Electronic structure of superconducting MgB2 and related binary and ternary borides
Authors:
N. I. Medvedeva,
A. L. Ivanovskii,
J. E. Medvedeva,
A. J. Freeman
Abstract:
First principles FLMTO-GGA electronic structure calculations of the new medium-$T_C$ superconductor (MTSC) $MgB_2$ and related diborides indicate that superconductivity in these compounds is related to the the existence of $p_{x,y}$-band holes at the $Γ$ point. Based on these calculations, we explain the absence of medium-$T_C$ superconductivity for $BeB_2$, $AlB_2$ $ScB_2$ and $YB_2$. The simul…
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First principles FLMTO-GGA electronic structure calculations of the new medium-$T_C$ superconductor (MTSC) $MgB_2$ and related diborides indicate that superconductivity in these compounds is related to the the existence of $p_{x,y}$-band holes at the $Γ$ point. Based on these calculations, we explain the absence of medium-$T_C$ superconductivity for $BeB_2$, $AlB_2$ $ScB_2$ and $YB_2$. The simulation of a number of $MgB_2$-based ternary systems using a supercell approach demonstrates that (i) the electron doping of $MgB_2$ (i.e., $MgB_{2-y}X_y$ with X=Be, C, N, O) and the creation of isoelectronic defects in the boron sublattice (nonstoichiometric $MgB_{y<2}$) are not favorable for superconductivity, and (ii) a possible way of searching for similar MTSC should be via hole doping of $MgB_2$ (i.e., $Mg_{1-x}M_xB_2$ with M=Be, Ca, Li, Na, Cu, Zn) or $CaB_2$ or via creating layered superstructures of the $MgB_2/CaB_2$ type. A recent report of superconductivity in Cu doped $MgB_2$ supports this view.
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Submitted 7 March, 2001;
originally announced March 2001.
