Showing 1–2 of 2 results for author: Medjdoub, F

Short Term Reliability and Robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs

Authors: Zhan Gao, Matteo Meneghini, Kathia Harrouche, Riad Kabouche, Francesca Chiocchetta, Daniele Marcon, Etienne Okada, Fabiana Rampazzo, Carlo De Santi, Farid Medjdoub, Gaudenzio Meneghesso, Enrico Zanoni

Abstract: Short-term reliability and robustness of 110 nm AlN/GaN HEMTs has been evaluated by means of off-state, semi-on state and on-state step stress tests on devices having different gate-drain distance, LGD. While breakdown voltages and critical voltages scale almost linearly with LGD, failure mode remains almost unchanged in all tested devices, and consists in an increase of gate leakage, accompanied… ▽ More Short-term reliability and robustness of 110 nm AlN/GaN HEMTs has been evaluated by means of off-state, semi-on state and on-state step stress tests on devices having different gate-drain distance, LGD. While breakdown voltages and critical voltages scale almost linearly with LGD, failure mode remains almost unchanged in all tested devices, and consists in an increase of gate leakage, accompanied by a positive shift of threshold voltage. In off-state, electroluminescence images detect the presence of localized leakage paths which may act as preferential paths for electron trapping. Degradation does not depend on dissipated power and is preliminary attributed to hot-electron trapping, enhanced by electric fields. △ Less

Submitted 30 July, 2021; v1 submitted 18 July, 2021; originally announced July 2021.

Comments: ["European Union (EU)" & "Horizon 2020"]["Euratom" & Euratom research & training programme 2014-2018"][EUGANIC][EDA Contract B 1447 IAP1 GP][5G_GaN_2]

Journal ref: Microelectronics Reliability, Volume 123, 2021, 114199

Multilayer Pt/Al Based Ohmic contacts for AlGaN/GaN Heterostructures Stable up to 600oC Ambient Air

Authors: Nitin Goyal, Srujana Dusari, Jochen Bardong, Farid Medjdoub, Andreas Kenda, Alfred Binder

Abstract: In this paper, we present a Pt/Al multilayer stack-based ohmic contact metallization for AlGaN/GaN heterostructures. CTLM structures were fabricated to assess the electrical properties of the proposed metallization. The fabricated stack shows excellent stability after more than 100 hours of continuous aging at 600oC in air. Measured I-V characteristics of the fabricated samples show excellent line… ▽ More In this paper, we present a Pt/Al multilayer stack-based ohmic contact metallization for AlGaN/GaN heterostructures. CTLM structures were fabricated to assess the electrical properties of the proposed metallization. The fabricated stack shows excellent stability after more than 100 hours of continuous aging at 600oC in air. Measured I-V characteristics of the fabricated samples show excellent linearity after the aging. The Pt/Al-based metallization shows great potential for future device and sensor applications in extreme environment conditions. △ Less

Submitted 30 September, 2015; originally announced September 2015.