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End-to-end numerical modeling of the Roman Space Telescope coronagraph
Authors:
John E. Krist,
John B. Steeves,
Brandon D. Dube,
A. J. Eldorado Riggs,
Brian D. Kern,
David S. Marx,
Eric J. Cady,
Hanying Zhou,
Ilya Y. Poberezhskiy,
Caleb W. Baker,
James P. McGuire,
Bijan Nemati,
Gary M. Kuan,
Bertrand Mennesson,
John T. Trauger,
Navtej S. Saini,
Sergi Hildebrandt Rafels
Abstract:
The Roman Space Telescope will have the first advanced coronagraph in space, with deformable mirrors for wavefront control, low-order wavefront sensing and maintenance, and a photon-counting detector. It is expected to be able to detect and characterize mature, giant exoplanets in reflected visible light. Over the past decade the performance of the coronagraph in its flight environment has been si…
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The Roman Space Telescope will have the first advanced coronagraph in space, with deformable mirrors for wavefront control, low-order wavefront sensing and maintenance, and a photon-counting detector. It is expected to be able to detect and characterize mature, giant exoplanets in reflected visible light. Over the past decade the performance of the coronagraph in its flight environment has been simulated with increasingly detailed diffraction and structural/thermal finite element modeling. With the instrument now being integrated in preparation for launch within the next few years, the present state of the end-to-end modeling is described, including the measured flight components such as deformable mirrors. The coronagraphic modes are thoroughly described, including characteristics most readily derived from modeling. The methods for diffraction propagation, wavefront control, and structural and thermal finite-element modeling are detailed. The techniques and procedures developed for the instrument will serve as a foundation for future coronagraphic missions such as the Habitable Worlds Observatory.
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Submitted 27 September, 2023;
originally announced September 2023.
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Hyperion: The origin of the stars A far-UV space telescope for high-resolution spectroscopy over wide fields
Authors:
Erika Hamden,
David Schiminovich,
Shouleh Nikzad,
Neal J. Turner,
Blakesley Burkhart,
Thomas J. Haworth,
Keri Hoadley,
Jinyoung Serena Kim,
Shmuel Bialyh,
Geoff Bryden,
Haeun Chung,
Nia Imara,
Rob Kennicutt,
Jorge Pineda,
Shuo Konga,
Yasuhiro Hasegawa,
Ilaria Pascucci,
Benjamin Godard,
Mark Krumholz,
Min-Young Lee,
Daniel Seifried,
Amiel Sternberg,
Stefanie Walch,
Miles Smith,
Stephen C. Unwin
, et al. (8 additional authors not shown)
Abstract:
We present Hyperion, a mission concept recently proposed to the December 2021 NASA Medium Explorer announcement of opportunity. Hyperion explores the formation and destruction of molecular clouds and planet-forming disks in nearby star-forming regions of the Milky Way. It does this using long-slit, high-resolution spectroscopy of emission from fluorescing molecular hydrogen, which is a powerful fa…
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We present Hyperion, a mission concept recently proposed to the December 2021 NASA Medium Explorer announcement of opportunity. Hyperion explores the formation and destruction of molecular clouds and planet-forming disks in nearby star-forming regions of the Milky Way. It does this using long-slit, high-resolution spectroscopy of emission from fluorescing molecular hydrogen, which is a powerful far-ultraviolet (FUV) diagnostic. Molecular hydrogen (H2) is the most abundant molecule in the universe and a key ingredient for star and planet formation, but is typically not observed directly because its symmetric atomic structure and lack of a dipole moment mean there are no spectral lines at visible wavelengths and few in the infrared. Hyperion uses molecular hydrogen's wealth of FUV emission lines to achieve three science objectives: (1) determining how star formation is related to molecular hydrogen formation and destruction at the boundaries of molecular clouds; (2) determining how quickly and by what process massive star feedback disperses molecular clouds; and (3) determining the mechanism driving the evolution of planet-forming disks around young solar-analog stars. Hyperion conducts this science using a straightforward, highly-efficient, single-channel instrument design. Hyperion's instrument consists of a 48 cm primary mirror, with an f/5 focal ratio. The spectrometer has two modes, both covering 138.5-161.5 nm bandpasses. A low resolution mode has a spectral resolution of R>10,000 with a slit length of 65 arcmin, while the high resolution mode has a spectral resolution of R>50,000 over a slit length of 5 armin. Hyperion occupies a 2 week long, high-earth, Lunar resonance TESS-like orbit, and conducts 2 weeks of planned observations per orbit, with time for downlinks and calibrations. Hyperion was reviewed as Category I, which is the highest rating possible, but was not selected.
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Submitted 13 December, 2022;
originally announced December 2022.
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Spin accumulation in forward-biased MnAs/GaAs Schottky diodes
Authors:
J. Stephens,
J. Berezovsky,
J. P. McGuire,
L. J. Sham,
A. C. Gossard,
D. D. Awschalom
Abstract:
We describe a new means for electrically creating spin polarization in semiconductors. In contrast to spin injection of electrons by tunneling through a reverse-biased Schottky barrier, we observe spin accumulation at the metal/semiconductor interface of forward-biased ferromagnetic Schottky diodes, which is consistent with a theory of spin-dependent reflection off the interface. Spatiotemporal…
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We describe a new means for electrically creating spin polarization in semiconductors. In contrast to spin injection of electrons by tunneling through a reverse-biased Schottky barrier, we observe spin accumulation at the metal/semiconductor interface of forward-biased ferromagnetic Schottky diodes, which is consistent with a theory of spin-dependent reflection off the interface. Spatiotemporal Kerr microscopy is used to image the electron spin and the resulting dynamic nuclear polarization that arises from the non equilibrium carrier polarization.
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Submitted 12 January, 2004;
originally announced January 2004.
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The Silicon Inversion Layer With A Ferromagnetic Gate: A Novel Spin Source
Authors:
J. P. McGuire,
C. Ciuti,
L. J. Sham
Abstract:
Novel spin transport behavior is theoretically shown to result from replacing the usual metal (or poly-silicon) gate in a silicon field-effect transistor with a ferromagnet, separated from the semiconductor by an ultra-thin oxide. The spin-dependent interplay between the drift current (due to a source-drain bias) and the diffusion current (due to carrier leakage into the ferromagnetic gate) resu…
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Novel spin transport behavior is theoretically shown to result from replacing the usual metal (or poly-silicon) gate in a silicon field-effect transistor with a ferromagnet, separated from the semiconductor by an ultra-thin oxide. The spin-dependent interplay between the drift current (due to a source-drain bias) and the diffusion current (due to carrier leakage into the ferromagnetic gate) results in a rich variety of spin dependence in the current that flows through such a device. We examine two cases of particular interest: (1) creating a 100% spin-polarized electrical current and (2) creating a pure spin current without a net electrical current. A spin-valve consisting of two sequential ferromagnetic gates is shown to exhibit magnetoresistance dependent upon the relative orientations of the magnetization of the two ferromagnets. The magnetoresistance ratio grows to arbitrarily large values in the regime of low source-drain bias, and is limited only by the spin-flip time in the channel.
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Submitted 10 October, 2003;
originally announced October 2003.
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Theory of Spin Transport Induced by Ferromagnetic Proximity On a Two-Dimensional Electron Gas
Authors:
J. P. McGuire,
C. Ciuti,
L. J. Sham
Abstract:
A theory of the proximity effects of the exchange splitting in a ferromagnetic metal on a two dimensional electron gas (2DEG) in a semiconductor is presented. The resulting spin-dependent energy and lifetime in the 2DEG create a marked spin-splitting in the driven in-plane current. The theory of the planar transport allows for current leakage into the ferromagnetic layer through the interface, w…
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A theory of the proximity effects of the exchange splitting in a ferromagnetic metal on a two dimensional electron gas (2DEG) in a semiconductor is presented. The resulting spin-dependent energy and lifetime in the 2DEG create a marked spin-splitting in the driven in-plane current. The theory of the planar transport allows for current leakage into the ferromagnetic layer through the interface, which leads to a competition between drift and diffusion. The spin-dependent in-plane conductivity of the 2DEG may be exploited to provide a new paradigm for spintronics devices based on planar devices in a field-effect transistor configuration. An illustrative example is provided through the transport theory of a proposed spin-valve which consists of a field-effect transistor configuration with two ferromagnetic gates. Results are provided for two experimentally accessible systems: the silicon inversion layer and the naturally-formed InAs accumulation layer.
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Submitted 15 September, 2003;
originally announced September 2003.
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Theory of Spin Orientation of Semiconductor Carriers at a Ferromagnetic Interface
Authors:
J. P. McGuire,
C. Ciuti,
L. J. Sham
Abstract:
A quantum theory of the spin-dependent scattering of semiconductor electrons by a Schottky barrier at an interface with a ferromagnet is presented. The reflection of unpolarized non-equilibrium carriers produces spontaneous spin-polarization in the semiconductor. If a net spin-polarization pre-exists in the semiconductor, the combination of the ferromagnet magnetization and the incident carrier…
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A quantum theory of the spin-dependent scattering of semiconductor electrons by a Schottky barrier at an interface with a ferromagnet is presented. The reflection of unpolarized non-equilibrium carriers produces spontaneous spin-polarization in the semiconductor. If a net spin-polarization pre-exists in the semiconductor, the combination of the ferromagnet magnetization and the incident carrier polarization combine to tilt the reflected polarization in the semiconductor. The spin reflection properties are investigated as functions of the system characteristics: the Schottky barrier height, semiconductor doping and applied bias. The effect on reflection due to the variation of the barrier width with electron energy is contrasted for two means of excitation: optical or electrical. Optically excited electrons have a wider energy spread than the near-equilibrium excitation from non-magnetic ohmic contacts.
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Submitted 4 February, 2003;
originally announced February 2003.
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Spin-dependent properties of a two-dimensional electron gas with ferromagnetic gates
Authors:
C. Ciuti,
J. P. McGuire,
L. J. Sham
Abstract:
A theoretical prediction of the spin-dependent electron self-energy and in-plane transport of a two-dimensional electron gas in proximity with a ferromagnetic gate is presented. The application of the predicted spin-dependent properties is illustrated by the proposal of a device configuration with two neighboring ferromagnetic gates which produces a magnetoresistance effect on the channel curren…
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A theoretical prediction of the spin-dependent electron self-energy and in-plane transport of a two-dimensional electron gas in proximity with a ferromagnetic gate is presented. The application of the predicted spin-dependent properties is illustrated by the proposal of a device configuration with two neighboring ferromagnetic gates which produces a magnetoresistance effect on the channel current generated by nonmagnetic source and drain contacts. Specific results are shown for a silicon inversion layer with iron gates. The gate leakage current is found to be beneficial to the spin effects.
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Submitted 9 October, 2002; v1 submitted 30 May, 2002;
originally announced May 2002.
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Ferromagnetic imprinting of spin polarization in a semiconductor
Authors:
C. Ciuti,
J. P. McGuire,
L. J. Sham
Abstract:
We present a theory of the imprinting of the electron spin coherence and population in an n-doped semiconductor which forms a junction with a ferromagnet. The reflection of non-equilibrium semiconductor electrons at the interface provides a mechanism to manipulate the spin polarization vector. In the case of unpolarized excitation, this ballistic effect produces spontaneous electron spin coheren…
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We present a theory of the imprinting of the electron spin coherence and population in an n-doped semiconductor which forms a junction with a ferromagnet. The reflection of non-equilibrium semiconductor electrons at the interface provides a mechanism to manipulate the spin polarization vector. In the case of unpolarized excitation, this ballistic effect produces spontaneous electron spin coherence and nuclear polarization in the semiconductor, as recently observed by time-resolved Faraday rotation experiments. We investigate the dependence of the spin reflection on the Schottky barrier height and the doping concentration in the semiconductor and suggest control mechanisms for possible device applications.
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Submitted 13 March, 2002;
originally announced March 2002.
