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Optical control of carrier wavefunction in magnetic quantum dots
Authors:
P. Zhang,
T. Norden,
J. M. Pientka,
R. Oszwałdowski,
A. Najafi,
B. Barman,
Y. Tsai,
W-C. Fan,
W-C. Chou,
J. E. Han,
I. Žutić,
B. D. McCombe,
A. Petrou
Abstract:
Spatially indirect Type-II band alignment in magnetically-doped quantum dot (QD) structures provides unexplored opportunities to control the magnetic interaction between carrier wavefunction in the QD and magnetic impurities. Unlike the extensively studied, spatially direct, QDs with Type-I band alignment where both electrons and holes are confined in the QD, in ZnTe QDs embedded in a (Zn,Mn)Se ma…
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Spatially indirect Type-II band alignment in magnetically-doped quantum dot (QD) structures provides unexplored opportunities to control the magnetic interaction between carrier wavefunction in the QD and magnetic impurities. Unlike the extensively studied, spatially direct, QDs with Type-I band alignment where both electrons and holes are confined in the QD, in ZnTe QDs embedded in a (Zn,Mn)Se matrix only the holes are confined in the QDs. Photoexcitation with photon energy 3.06 eV (2.54 eV) generates electron-hole pairs predominantly in the (Zn,Mn)Se matrix (ZnTe QDs). The photoluminescence (PL) at 7 K in the presence of an external magnetic field exhibits an up to three-fold increase in the saturation red shift with the 2.54 eV excitation compared to the shift observed with 3.06 eV excitation. This unexpected result is attributed to multiple hole occupancy of the QD and the resulting increased penetration of the hole wavefunction tail further into the (Zn,Mn)Se matrix. The proposed model is supported by microscopic calculations which accurately include the role of hole-hole Coulomb interactions as well as the hole-Mn spin exchange interactions.
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Submitted 15 January, 2018;
originally announced January 2018.
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Time-resolved magnetophotoluminescence studies of magnetic polaron dynamics in type-II quantum dots
Authors:
B. Barman,
R. Oszwałdowski,
L. Schweidenback,
A. H. Russ,
J. M. Pientka,
Y. Tsai,
W-C. Chou,
W. C. Fan,
J. R. Murphy,
A. N. Cartwright,
I. R. Sellers,
A. G. Petukhov,
I. Žutić,
B. D. McCombe,
A. Petrou
Abstract:
We used continuous wave photoluminescence (cw-PL) and time resolved photoluminescence (TR-PL) spectroscopy to compare the properties of magnetic polarons (MP) in two related spatially indirect II-VI epitaxially grown quantum dot systems. In the ZnTe/(Zn,Mn)Se system the holes are confined in the non-magnetic ZnTe quantum dots (QDs), and the electrons reside in the magnetic (Zn,Mn)Se matrix. On the…
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We used continuous wave photoluminescence (cw-PL) and time resolved photoluminescence (TR-PL) spectroscopy to compare the properties of magnetic polarons (MP) in two related spatially indirect II-VI epitaxially grown quantum dot systems. In the ZnTe/(Zn,Mn)Se system the holes are confined in the non-magnetic ZnTe quantum dots (QDs), and the electrons reside in the magnetic (Zn,Mn)Se matrix. On the other hand, in the (Zn,Mn)Te/ZnSe system, the holes are confined in the magnetic (Zn,Mn)Te QDs, while the electrons remain in the surrounding non-magnetic ZnSe matrix. The magnetic polaron formation energies in both systems were measured from the temporal red-shift of the band-edge emission. The magnetic polaron exhibits distinct characteristics depending on the location of the Mn ions. In the ZnTe/(Zn,Mn)Se system the magnetic polaron shows conventional behavior with decreasing with increasing temperature T and increasing magnetic field B. In contrast, in the (Zn,Mn)Te/ZnSe system has unconventional dependence on temperature T and magnetic field B; is weakly dependent on T as well as on B. We discuss a possible origin for such a striking difference in the MP properties in two closely related QD systems.
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Submitted 14 October, 2015;
originally announced October 2015.
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Electrical and terahertz magnetospectroscopy studies of laser-patterned micro- and nanostructures on InAs-based heterostructures
Authors:
Olivio Chiatti,
Sven S. Buchholz,
Christian Heyn,
Wolfgang Hansen,
Mehdi Pakmehr,
Bruce D. McCombe,
Saskia F. Fischer
Abstract:
Nanostructures fabricated from narrow-gap semiconductors with strong spin-orbit interaction (SOI), such as InAs, can be used to filter momentum modes of electrons and offer the possibility to create and detect spin-polarized currents entirely by electric fields. Here, we present magnetotransport and THz magnetospectroscopy investigations of Hall-bars with back-gates made from in InGaAs/InAlAs quan…
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Nanostructures fabricated from narrow-gap semiconductors with strong spin-orbit interaction (SOI), such as InAs, can be used to filter momentum modes of electrons and offer the possibility to create and detect spin-polarized currents entirely by electric fields. Here, we present magnetotransport and THz magnetospectroscopy investigations of Hall-bars with back-gates made from in InGaAs/InAlAs quantum well structures with a strained 4 nm InAs inserted channel. The two-dimensional electron gas is at 53 nm depth and has a carrier density of about $6\times10^{11}$ cm$^{-2}$ and mobility of about $2\times10^{5}$ cm$^2$/Vs, after illumination. Electrical and THz optical transport measurements at low temperatures and in high magnetic fields reveal an effective mass of 0.038$m_{0}$ and an anisotropic $g$-factor of up to 20, larger than for bulk InAs or InAs-based heterostructures. We demonstrate that quasi-one-dimensional channels can be formed by micro-laser lithography. The population of subbands is controlled by in-plane gates. Contrary to previous reports symmetric and asymmetric in-plane gate voltages applied to quasi-one dimensional channels did not show indications of SOI-induced anomalies in the conductance.
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Submitted 9 February, 2015; v1 submitted 30 October, 2014;
originally announced October 2014.
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Terahertz Magneto Optical Polarization Modulation Spectroscopy
Authors:
D. K. George,
A. V. Stier,
C. T. Ellis,
B. D. McCombe,
J. Černe,
A. G. Markelz
Abstract:
We report the development of new terahertz techniques for rapidly measuring the complex Faraday angle in systems with broken time-reversal symmetry using the cyclotron resonance of a GaAs two-dimensional electron gas in a magnetic field as a system for demonstration of performance. We have made polarization modulation, high sensitivity (< 1 mrad) narrow band rotation measurements with a CW optical…
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We report the development of new terahertz techniques for rapidly measuring the complex Faraday angle in systems with broken time-reversal symmetry using the cyclotron resonance of a GaAs two-dimensional electron gas in a magnetic field as a system for demonstration of performance. We have made polarization modulation, high sensitivity (< 1 mrad) narrow band rotation measurements with a CW optically pumped molecular gas laser, and by combining the distinct advantages of terahertz (THz) time domain spectroscopy and polarization modulation techniques, we have demonstrated rapid broadband rotation measurements to < 5 mrad precision.
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Submitted 12 January, 2012;
originally announced January 2012.
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Robust Magnetic Polarons in Type-II (Zn,Mn)Te Quantum Dots
Authors:
I. R. Sellers,
R. Oszwaldowski,
V. R. Whiteside,
M. Eginligil,
A. Petrou,
I. Zutic,
W-C. Chou,
W. C. Fan,
A. G. Petukhov,
B. D. McCombe
Abstract:
We present evidence of magnetic ordering in type-II (Zn, Mn) Te quantum dots. This ordering is attributed to the formation of bound magnetic polarons caused by the exchange interaction between the strongly localized holes and Mn within the dots. In our photoluminescence studies, the magnetic polarons are detected at temperatures up to ~ 200 K, with a binding energy of ~ 40 meV. In addition, thes…
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We present evidence of magnetic ordering in type-II (Zn, Mn) Te quantum dots. This ordering is attributed to the formation of bound magnetic polarons caused by the exchange interaction between the strongly localized holes and Mn within the dots. In our photoluminescence studies, the magnetic polarons are detected at temperatures up to ~ 200 K, with a binding energy of ~ 40 meV. In addition, these dots display an unusually small Zeeman shift with applied field (2 meV at 10 T). This behavior is explained by a small and weakly temperature-dependent magnetic susceptibility due to anti-ferromagnetic coupling of the Mn spins.
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Submitted 1 December, 2009;
originally announced December 2009.
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Coherent Aharonov Bohm oscillations in type-II (ZnMn)Te quantum dots
Authors:
I. R. Sellers,
V. R. Whiteside,
A. O. Govorov,
W. C. Fan,
W-C. Chou,
I. Khan,
A. Petrou,
B. D. McCombe
Abstract:
The magneto-photoluminescence of type-II (ZnMn)Te quantum dots is presented. As a result of the type-II band alignment Aharonov-Bohm (AB) oscillations in the photoluminescence intensity are evident, confirming previous predictions for the suitability of this geometry to control the optical Aharonov-Bohm effect in semiconductor systems. Moreover, the system demonstrates an interesting interplay b…
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The magneto-photoluminescence of type-II (ZnMn)Te quantum dots is presented. As a result of the type-II band alignment Aharonov-Bohm (AB) oscillations in the photoluminescence intensity are evident, confirming previous predictions for the suitability of this geometry to control the optical Aharonov-Bohm effect in semiconductor systems. Moreover, the system demonstrates an interesting interplay between the AB effect and the spin polarization in diluted magnetic semiconductor quantum dots. The intensity of the AB oscillations increases with both magnetic field and the degree of optical polarization, indicating the suppression of spin fluctuations improves the coherence of the system.
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Submitted 17 March, 2008;
originally announced March 2008.
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Aharanov-Bohm excitons at elevated temperatures in type-II ZnTe/ZnSe quantum dots
Authors:
I. R. Sellers,
V. R. Whiteside,
I. L. Kuskovsky,
A. O. Govorov,
B. D. McCombe
Abstract:
Optical emission from type-II ZnTe/ZnSe quantum dots demonstrates large and persistent oscillations in both the peak energy and intensity indicating the formation of coherently rotating states. Furthermore, the Aharanov-Bohm (AB) effect is shown to be remarkably robust and persists until 180K. This is at least one order of magnitude greater than the typical temperatures in lithographically defin…
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Optical emission from type-II ZnTe/ZnSe quantum dots demonstrates large and persistent oscillations in both the peak energy and intensity indicating the formation of coherently rotating states. Furthermore, the Aharanov-Bohm (AB) effect is shown to be remarkably robust and persists until 180K. This is at least one order of magnitude greater than the typical temperatures in lithographically defined rings. To our knowledge this is the highest temperature at which the AB effect has been observed in semiconductor structures.
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Submitted 23 October, 2007;
originally announced October 2007.
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Internal transitions of quasi-2D charged magneto-excitons in the presence of purposely introduced weak lateral potential energy variations
Authors:
C. J. Meining,
V. R. Whiteside,
B. D. McCombe,
A. B. Dzyubenko,
J. G. Tischler,
A. S. Bracker,
D. Gammon
Abstract:
Optically detected resonance spectroscopy has been used to investigate effects of weak random lateral potential energy fluctuations on internal transitions of charged magneto-excitons (trions) in quasi two-dimensional GaAs/AlGaAs quantum-well (QW) structures. Resonant changes in the ensemble photoluminescence induced by far-infrared radiation were studied as a function of magnetic field for samp…
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Optically detected resonance spectroscopy has been used to investigate effects of weak random lateral potential energy fluctuations on internal transitions of charged magneto-excitons (trions) in quasi two-dimensional GaAs/AlGaAs quantum-well (QW) structures. Resonant changes in the ensemble photoluminescence induced by far-infrared radiation were studied as a function of magnetic field for samples having: 1) no growth interrupts (short range well-width fluctuations), and 2) intentional growth interrupts (long range monolayer well-width differences). Only bound-to-continuum internal transitions of the negatively charged trion are observed for samples of type 1. In contrast, a feature on the high field (low energy) side of electron cyclotron resonance is seen for samples of type 2 with well widths of 14.1 and 8.4 nm. This feature is attributed to a bound-to-bound transition of the spin-triplet with non-zero oscillator strength resulting from breaking of translational symmetry.
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Submitted 12 December, 2006; v1 submitted 13 June, 2006;
originally announced June 2006.
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Above-Room-Temperature Ferromagnetism in GaSb/Mn Digital Alloys
Authors:
X. Chen,
M. Na,
M. Cheon,
S. Wang,
H. Luo,
B. D. McCombe,
X. Liu,
Y. Sasaki,
T. Wojtowicz,
J. K. Furdyna,
S. J. Potashnik,
P. Schiffer
Abstract:
Digital alloys of GaSb/Mn have been fabricated by molecular beam epitaxy. Transmission electron micrographs showed good crystal quality with individual Mn-containing layers well resolved; no evidence of 3D MnSb precipitates was seen in as-grown samples. All samples studied exhibited ferromagnetism with temperature dependent hysteresis loops in the magnetization accompanied by metallic p-type con…
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Digital alloys of GaSb/Mn have been fabricated by molecular beam epitaxy. Transmission electron micrographs showed good crystal quality with individual Mn-containing layers well resolved; no evidence of 3D MnSb precipitates was seen in as-grown samples. All samples studied exhibited ferromagnetism with temperature dependent hysteresis loops in the magnetization accompanied by metallic p-type conductivity with a strong anomalous Hall effect (AHE) up to 400 K (limited by the experimental setup). The anomalous Hall effect shows hysteresis loops at low temperatures and above room temperature very similar to those seen in the magnetization. The strong AHE with hysteresis indicates that the holes interact with the Mn spins above room temperature. All samples are metallic, which is important for spintronics applications.
* To whom correspondence should be addressed. E-mail: [email protected]
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Submitted 18 March, 2002;
originally announced March 2002.
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Internal transitions of negatively charged magneto-excitons and many body effects in a two-dimensional electron gas
Authors:
H. A. Nickel,
T. M. Yeo,
A. B. Dzyubenko,
B. D. McCombe,
A. Petrou,
A. Yu. Sivachenko,
W. Schaff,
V. Umansky
Abstract:
Spin-singlet and spin-triplet internal transitions of quasi-two-dimensional, negatively charged magneto-excitons (X-) and their evolution with excess electron density have been studied in GaAs/AlGaAs quantum-wells by optically detected resonance (ODR) spectroscopy. In the dilute electron limit, due to magnetic translational invariance, the ODR spectra are dominated by bound-to-continuum bands in…
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Spin-singlet and spin-triplet internal transitions of quasi-two-dimensional, negatively charged magneto-excitons (X-) and their evolution with excess electron density have been studied in GaAs/AlGaAs quantum-wells by optically detected resonance (ODR) spectroscopy. In the dilute electron limit, due to magnetic translational invariance, the ODR spectra are dominated by bound-to-continuum bands in contrast to the superficially similar negatively-charged-donor system D-, which exhibits strictly bound-to-bound transitions. With increasing excess electron density in the wells in the magnetic field region corresponding to Landau level filling factors nu < 2 the X- like transitions are blue-shifted; they are absent for nu > 2. The blue-shifted transitions are explained in terms of a new type of collective excitation -- magnetoplasmons bound to a mobile valence band hole, which demonstrates the many-body nature of "exciton-like" magnetoluminescence for nu < 2.
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Submitted 17 December, 2001; v1 submitted 21 August, 2001;
originally announced August 2001.
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Interaction of an electron gas with photoexcited electron-hole pairs in modulation-doped GaAs and CdTe quantum wells
Authors:
H. A. Nickel,
T. Yeo,
C. J. Meining,
D. R. Yakovlev,
M. Furis,
A. B. Dzyubenko,
B. D. McCombe,
A. Petrou
Abstract:
The nature of the correlated electron gas and its response to photo-injected electron-hole pairs in nominally undoped and modulation-doped multiple quantum-well (MQW) structures was studied by experiment and theory, revealing a new type of optically-active excitation, magnetoplasmons bound to a mobile valence hole. These excitations are blue-shifted from the corresponding transition of the isola…
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The nature of the correlated electron gas and its response to photo-injected electron-hole pairs in nominally undoped and modulation-doped multiple quantum-well (MQW) structures was studied by experiment and theory, revealing a new type of optically-active excitation, magnetoplasmons bound to a mobile valence hole. These excitations are blue-shifted from the corresponding transition of the isolated charged magnetoexciton X-. The observed blue-shift of X- is larger than that of two-electron negative donor D-, in agreement with theoretical predictions.
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Submitted 4 September, 2001; v1 submitted 14 June, 2001;
originally announced June 2001.
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Internal Transitions of Two-Dimensional Charged Magneto-Excitons X-: Theory and Experiment
Authors:
A. B. Dzyubenko,
A. Yu. Sivachenko,
H. A. Nickel,
T. M. Yeo,
G. Kioseoglou,
B. D. McCombe,
A. Petrou
Abstract:
Internal spin-singlet and spin-triplet transitions of charged excitons X- in magnetic fields in quantum wells have been studied experimentally and theoretically. The allowed X- transitions are photoionizing and exhibit a characteristic double-peak structure, which reflects the rich structure of the magnetoexciton continua in higher Landau levels (LL's). We discuss a novel exact selection rule, a…
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Internal spin-singlet and spin-triplet transitions of charged excitons X- in magnetic fields in quantum wells have been studied experimentally and theoretically. The allowed X- transitions are photoionizing and exhibit a characteristic double-peak structure, which reflects the rich structure of the magnetoexciton continua in higher Landau levels (LL's). We discuss a novel exact selection rule, a hidden manifestation of translational invariance, that governs transitions of charged mobile complexes in a magnetic field.
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Submitted 8 July, 1999;
originally announced July 1999.