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Scalable Atomic Arrays for Spin-Based Quantum Computers in Silicon
Authors:
Alexander M. Jakob,
Simon G. Robson,
Hannes R. Firgau,
Vincent Mourik,
Vivien Schmitt,
Danielle Holmes,
Matthias Posselt,
Edwin L. H. Mayes,
Daniel Spemann,
Andrea Morello,
David N. Jamieson
Abstract:
Semiconductor spin qubits combine excellent quantum performance with the prospect of manufacturing quantum devices using industry-standard metal-oxide-semiconductor (MOS) processes. This applies also to ion-implanted donor spins, which further afford exceptional coherence times and large Hilbert space dimension in their nuclear spin. Here we demonstrate and integrate multiple strategies to manufac…
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Semiconductor spin qubits combine excellent quantum performance with the prospect of manufacturing quantum devices using industry-standard metal-oxide-semiconductor (MOS) processes. This applies also to ion-implanted donor spins, which further afford exceptional coherence times and large Hilbert space dimension in their nuclear spin. Here we demonstrate and integrate multiple strategies to manufacture scale-up donor-based quantum computers. We use $^{31}$PF$_{2}$ molecule implants to triple the placement certainty compared to $^{31}$P ions, while attaining 99.99$\,$% confidence in detecting the implant. Similar confidence is retained by implanting heavier atoms such as $^{123}$Sb and $^{209}$Bi, which represent high-dimensional qudits for quantum information processing, while Sb$_2$ molecules enable deterministic formation of closely-spaced qudits. We demonstrate the deterministic formation of regular arrays of donor atoms with 300$\,$nm spacing, using step-and-repeat implantation through a nano aperture. These methods cover the full gamut of technological requirements for the construction of donor-based quantum computers in silicon.
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Submitted 18 September, 2023;
originally announced September 2023.
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Room temperature magnetic phase transition in an electrically-tuned van der Waals ferromagnet
Authors:
Cheng Tan,
Ji-Hai Liao,
Guolin Zheng,
Meri Algarni,
Jia-Yi Lin,
Xiang Ma,
Edwin L. H. Mayes,
Matthew R. Field,
Sultan Albarakati,
Majid Panahandeh-Fard,
Saleh Alzahrani,
Guopeng Wang,
Yuanjun Yang,
Dimitrie Culcer,
James Partridge,
Mingliang Tian,
Bin Xiang,
Yu-Jun Zhao,
Lan Wang
Abstract:
Finding tunable van der Waals (vdW) ferromagnets that operate at above room temperature is an important research focus in physics and materials science. Most vdW magnets are only intrinsically magnetic far below room temperature and magnetism with square-shaped hysteresis at room-temperature has yet to be observed. Here, we report magnetism in a quasi-2D magnet Cr1.2Te2 observed at room temperatur…
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Finding tunable van der Waals (vdW) ferromagnets that operate at above room temperature is an important research focus in physics and materials science. Most vdW magnets are only intrinsically magnetic far below room temperature and magnetism with square-shaped hysteresis at room-temperature has yet to be observed. Here, we report magnetism in a quasi-2D magnet Cr1.2Te2 observed at room temperature (290 K). This magnetism was tuned via a protonic gate with an electron doping concentration up to 3.8 * 10^21 cm^-3. We observed non-monotonic evolutions in both coercivity and anomalous Hall resistivity. Under increased electron doping, the coercivities and anomalous Hall effects (AHEs) vanished, indicating a doping-induced magnetic phase transition. This occurred up to room temperature. DFT calculations showed the formation of an antiferromagnetic (AFM) phase caused by the intercalation of protons which induced significant electron doping in the Cr1.2Te2. The tunability of the magnetic properties and phase in room temperature magnetic vdW Cr1.2Te2 is a significant step towards practical spintronic devices.
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Submitted 19 March, 2024; v1 submitted 20 August, 2023;
originally announced August 2023.
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A telecom O-band emitter in diamond
Authors:
Sounak Mukherjee,
Zi-Huai Zhang,
Daniel G. Oblinsky,
Mitchell O. de Vries,
Brett C. Johnson,
Brant C. Gibson,
Edwin L. H. Mayes,
Andrew M. Edmonds,
Nicola Palmer,
Matthew L. Markham,
Ádám Gali,
Gergő Thiering,
Adam Dalis,
Timothy Dumm,
Gregory D. Scholes,
Alastair Stacey,
Philipp Reineck,
Nathalie P. de Leon
Abstract:
Color centers in diamond are promising platforms for quantum technologies. Most color centers in diamond discovered thus far emit in the visible or near-infrared wavelength range, which are incompatible with long-distance fiber communication and unfavorable for imaging in biological tissues. Here, we report the experimental observation of a new color center that emits in the telecom O-band, which…
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Color centers in diamond are promising platforms for quantum technologies. Most color centers in diamond discovered thus far emit in the visible or near-infrared wavelength range, which are incompatible with long-distance fiber communication and unfavorable for imaging in biological tissues. Here, we report the experimental observation of a new color center that emits in the telecom O-band, which we observe in silicon-doped bulk single crystal diamonds and microdiamonds. Combining absorption and photoluminescence measurements, we identify a zero-phonon line at 1221 nm and phonon replicas separated by 42 meV. Using transient absorption spectroscopy, we measure an excited state lifetime of around 270 ps and observe a long-lived baseline that may arise from intersystem crossing to another spin manifold.
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Submitted 10 November, 2022;
originally announced November 2022.
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Antisymmetric magnetoresistance in van der Waals Fe3GeTe2/graphite/Fe3GeTe2 tri-layer heterostructures
Authors:
Sultan Albarakati,
Cheng Tan,
Zhong-Jia Chen,
James G. Partridge,
Guolin Zheng,
Lawrence Farrar,
Edwin L. H. Mayes,
Matthew R. Field,
Changgu Lee,
Yihao Wang,
Yiming Xiong,
Mingliang Tian,
Feixiang Xiang,
Alex R. Hamilton,
Oleg A. Tretiakov,
Dimitrie Culcer,
Yu-Jun Zhao,
Lan Wang
Abstract:
Van der Waals (vdW) ferromagnetic materials are rapidly establishing themselves as effective building blocks for next generation spintronic devices. When layered with non-magnetic vdW materials, such as graphene and/or topological insulators, vdW heterostructures can be assembled (with no requirement for lattice matching) to provide otherwise unattainable device structures and functionalities. We…
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Van der Waals (vdW) ferromagnetic materials are rapidly establishing themselves as effective building blocks for next generation spintronic devices. When layered with non-magnetic vdW materials, such as graphene and/or topological insulators, vdW heterostructures can be assembled (with no requirement for lattice matching) to provide otherwise unattainable device structures and functionalities. We report a hitherto rarely seen antisymmetric magnetoresistance (MR) effect in van der Waals heterostructured Fe3GeTe2/graphite/Fe3GeTe2 devices. Unlike conventional giant magnetoresistance (GMR) which is characterized by two resistance states, the MR in these vdW heterostructures features distinct high, intermediate and low resistance states. This unique characteristic is suggestive of underlying physical mechanisms that differ from those observed before. After theoretical calculations, the three resistance behavior was attributed to a spin momentum locking induced spin polarized current at the graphite/FGT interface. Our work reveals that ferromagnetic heterostructures assembled from vdW materials can exhibit substantially different properties to those exhibited by similar heterostructures grown in vacuum. Hence, it highlights the potential for new physics and new spintronic applications to be discovered using vdW heterostructures.
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Submitted 25 April, 2019; v1 submitted 23 April, 2019;
originally announced April 2019.
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Nanoscale compositional evolution in complex oxide based resistive memories
Authors:
Taimur Ahmed,
Sumeet Walia,
Edwin L. H. Mayes,
Rajesh Ramanathan,
Paul Guagliardo,
Vipul Bansal,
Madhu Bhaskaran,
J. Joshua Yang,
Sharath Sriram
Abstract:
Functional oxides based resistive memories are recognized as potential candidate for the next-generation high density data storage and neuromorphic applications. Fundamental understanding of the compositional changes in the functional oxides is required to tune the resistive switching characteristics for enhanced memory performance. Herein, we present the micro/nano-structural and compositional ch…
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Functional oxides based resistive memories are recognized as potential candidate for the next-generation high density data storage and neuromorphic applications. Fundamental understanding of the compositional changes in the functional oxides is required to tune the resistive switching characteristics for enhanced memory performance. Herein, we present the micro/nano-structural and compositional changes induced in a resistive oxide memory during resistive switching. Oxygen deficient amorphous chromium doped strontium titanate (Cr:$a$-SrTiO$_{3-x}$) based resistance change memories are fabricated in a Ti/Cr:$a$-SrTiO$_{3-x}$ heterostructure and subjected to different biasing conditions to set memory states. Transmission electron microscope based cross-sectional analyses of the memory devices in different memory states shows that the micro/nano-structural changes in amorphous complex oxide and associated redox processes define the resistive switching behavior. These experimental results provide insights and supporting material for Ref. [1].
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Submitted 30 June, 2018;
originally announced July 2018.
