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The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs
Authors:
Nikolaos Vasileiadis,
Alexandros Mavropoulis,
Christoforos Theodorou,
Panagiotis Dimitrakis
Abstract:
This research explores the characteristics of two CMOS-compatible RRAM cells utilizing silicon nitride as the switching material. By employing SET/RESET pulse sequences, the study successfully attains four distinct and stable resistance states. To gain deeper insights, a Low-Frequency Noise (LFN) statistical analysis is conducted to investigate the role of a tunneling oxide between the bottom elec…
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This research explores the characteristics of two CMOS-compatible RRAM cells utilizing silicon nitride as the switching material. By employing SET/RESET pulse sequences, the study successfully attains four distinct and stable resistance states. To gain deeper insights, a Low-Frequency Noise (LFN) statistical analysis is conducted to investigate the role of a tunneling oxide between the bottom electrode and SiNx at various resistance levels. The findings from the LFN measurements strongly suggest that the multilevel high resistance switching primarily arises from variations in the number of nitrogen vacancies, which in turn modulate the conductivity of conductive filaments (CF). Notably, this modulation does not compromise the quality of the filament's surrounding interface. This research sheds light on the underlying mechanisms of RRAM cells and their potential for advanced memory applications.
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Submitted 6 February, 2025;
originally announced February 2025.
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Synaptic MIS Silicon Nitride Resistance Switching Memory Cells on SOI Substrate
Authors:
AE Mavropoulis,
N Vasileiadis,
P Normand,
V Ioannou-Sougleridis,
K Tsakalos,
G Ch Sirakoulis,
P Dimitrakis
Abstract:
In this work, the comparison of resistive memory MIS single-cells without selector (1R), having silicon nitride as switching dielectric, fabricated on SOI and bulk Si wafers is demonstrated. Comprehensive experimental investigations reveal the advantage of SOI substrate over bulk Si in terms of cycling endurance, cell-to-cell variability, retention and data loss rate.
In this work, the comparison of resistive memory MIS single-cells without selector (1R), having silicon nitride as switching dielectric, fabricated on SOI and bulk Si wafers is demonstrated. Comprehensive experimental investigations reveal the advantage of SOI substrate over bulk Si in terms of cycling endurance, cell-to-cell variability, retention and data loss rate.
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Submitted 6 February, 2025;
originally announced February 2025.
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Random Telegraph Noise of MIS and MIOS Silicon Nitride memristors at different resistance states
Authors:
N Vasileiadis,
P Loukas,
A Mavropoulis,
P Normand,
I Karafyllidis,
G Ch Sirakoulis,
P Dimitrakis
Abstract:
Resistive memories (RRAM) are promising candidates for replacing present nonvolatile memories and realizing storage class memories; hence resistance switching devices are of particular interest. These devices are typically memristive, with a large number of discrete resistance levels and in some configurations, they perform as analog memories. Noise studies have been used to enlighten further the…
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Resistive memories (RRAM) are promising candidates for replacing present nonvolatile memories and realizing storage class memories; hence resistance switching devices are of particular interest. These devices are typically memristive, with a large number of discrete resistance levels and in some configurations, they perform as analog memories. Noise studies have been used to enlighten further the resistance switching mechanism in these devices. Recently, a strong interest arose on the noise generated by RRAM/memristors because due to their inherent stochasticity can be used for cryptography and other security applications. In this work, two fully CMOS compatible memristive devices both with silicon nitride as switching material, were examined in terms of multi-level resistance operation. Using appropriate SET/RESET pulse sequences through a flexible analog tuning protocol, four stable resistance states were investigated through random telegraph noise measurements and analysis. A possible model enlightening the role of silicon nitride defects in the observed noise signals at different resistive states is presented.
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Submitted 5 February, 2025;
originally announced February 2025.
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Novel crossbar array of silicon nitride resistive memories on SOI enables memristor rationed logic
Authors:
N Vasileiadis,
A Mavropoulis,
I Karafyllidis,
G Ch Sirakoulis,
P Dimitrakis
Abstract:
In this work, the fabrication of crossbar arrays of silicon nitride resistive memories on silicon-on-insulator substrate and their utilization to realize multi-rationed logic circuits are presented. Typical electrical characterization of the memristors revealed their ability of multi-state operation by the presence of 12 well separated resistance levels. Through a dedicated modeling and fitting pr…
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In this work, the fabrication of crossbar arrays of silicon nitride resistive memories on silicon-on-insulator substrate and their utilization to realize multi-rationed logic circuits are presented. Typical electrical characterization of the memristors revealed their ability of multi-state operation by the presence of 12 well separated resistance levels. Through a dedicated modeling and fitting procedure of these levels, a reconfigurable logic based on memristor rationed logic scheme is designed and a crossbar integration methodology was proposed. Finally, several circuitry aspects were simulated in SPICE with a silicon nitride SOI crossbar array calibrated model and power optimization prospects were discussed.
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Submitted 5 February, 2025;
originally announced February 2025.
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Effect of SOI substrate on silicon nitride resistance switching using MIS structure
Authors:
A Mavropoulis,
N Vasileiadis,
C Theodorou,
L Sygellou,
P Normand,
G Ch Sirakoulis,
P Dimitrakis
Abstract:
Several resistive memory technologies (RRAMs) are prominent, but few are fulfilling the requirements for CMOS integration and meet the commercialization standards. In this work, the fabrication and electrical characterization of a fully compatible CMOS process on SOI substrate of 1R silicon SiN-based resistance switching (RS) MIS devices is presented. The RS characteristics are compared with the s…
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Several resistive memory technologies (RRAMs) are prominent, but few are fulfilling the requirements for CMOS integration and meet the commercialization standards. In this work, the fabrication and electrical characterization of a fully compatible CMOS process on SOI substrate of 1R silicon SiN-based resistance switching (RS) MIS devices is presented. The RS characteristics are compared with the same devices previously fabricated on bulk silicon.
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Submitted 4 February, 2025;
originally announced February 2025.
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Analysis of random telegraph noise in resistive memories: The case of unstable filaments
Authors:
Nikolaos Vasileiadis,
Alexandros Mavropoulis,
Panagiotis Loukas,
Georgios Ch Sirakoulis,
Panagiotis Dimitrakis
Abstract:
Through Random Telegraph Noise (RTN) analysis, valuable information can be provided about the role of defect traps in fine tuning and reading of the state of a nanoelectronic device. However, time domain analysis techniques exhibit their limitations in case where unstable RTN signals occur. These instabilities are a common issue in Multi-Level Cells (MLC) of resistive memories (ReRAM), when the tu…
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Through Random Telegraph Noise (RTN) analysis, valuable information can be provided about the role of defect traps in fine tuning and reading of the state of a nanoelectronic device. However, time domain analysis techniques exhibit their limitations in case where unstable RTN signals occur. These instabilities are a common issue in Multi-Level Cells (MLC) of resistive memories (ReRAM), when the tunning protocol fails to find a perfectly stable resistance state, which in turn brings fluctuations to the RTN signal especially in long time measurements and cause severe errors in the estimation of the distribution of time constants of the observed telegraphic events, i.e., capture/emission of carriers from traps. In this work, we analyze the case of the unstable filaments in silicon nitride-based ReRAM devices and propose an adaptive filter implementing a moving-average detrending method in order to flatten unstable RTN signals and increase sufficiently the accuracy of the conducted measurements. The te and tc emission/capture time constants of the traps, respectively, are then calculated and a cross-validation through frequency domain analysis (Lorentzian fitting) was performed proving that the proposed method is accurate.
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Submitted 4 February, 2025;
originally announced February 2025.
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Silicon nitride resistance switching MIS cells doped with silicon atoms
Authors:
A Mavropoulis,
N Vasileiadis,
C Bonafos,
P Normand,
V Ioannou-Sougleridis,
G Ch Sirakoulis,
P Dimitrakis
Abstract:
Stoichiometric SiNx layers (x = [N]/[Si] = 1.33) are doped with Si atoms by ultra-low energy ion implantation (ULE-II) and subsequently annealed at different temperatures in inert ambient conditions. Detailed material and memory cells characterization is performed to investigate the effect of Si dopants on the switching properties and performance of the fabricated resistive memory cells. In this c…
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Stoichiometric SiNx layers (x = [N]/[Si] = 1.33) are doped with Si atoms by ultra-low energy ion implantation (ULE-II) and subsequently annealed at different temperatures in inert ambient conditions. Detailed material and memory cells characterization is performed to investigate the effect of Si dopants on the switching properties and performance of the fabricated resistive memory cells. In this context extensive dc current-voltage and impedance spectroscopy measurements are carried out systematically and the role of doping in dielectric properties of the nitride films is enlightened. The dc and ac conduction mechanisms are investigated in a comprehensive way. Room temperature retention characteristics of resistive states are also presented.
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Submitted 4 February, 2025;
originally announced February 2025.
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Effect of Silicon Atom Doping in SiNx Resistive Switching Films
Authors:
A Mavropoulis,
N Vasileiadis,
C Bonafos,
P Normand,
V Ioannou-Sougleridis,
G Ch Sirakoulis,
P Dimitrakis
Abstract:
Doping stoichiometric SiNx layers (x=[N]/[Si]=1.33) with Si atoms by ultra-low energy ion implantation (ULE-II) and annealing them at different temperatures can significantly impact the switching characteristics. Electrical characterization and dielectric breakdown measurements are used to identify the main switching properties and performance of the fabricated devices and the effect that the Si d…
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Doping stoichiometric SiNx layers (x=[N]/[Si]=1.33) with Si atoms by ultra-low energy ion implantation (ULE-II) and annealing them at different temperatures can significantly impact the switching characteristics. Electrical characterization and dielectric breakdown measurements are used to identify the main switching properties and performance of the fabricated devices and the effect that the Si dopants and annealing temperature have. In addition, impedance spectroscopy measurements revealed the dielectric properties of the silicon nitride films, as well as the ac conductance, which is utilized to identify the conduction mechanisms.
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Submitted 3 February, 2025;
originally announced February 2025.
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1/f and Random Telegraph Noise of Single-Layer Graphene Devices with Interdigitated Electrodes
Authors:
Georgia Samara,
Nikolaos Vasileiadis,
Alexandros Mavropoulis,
Christoforos Theodorou,
Konstantinos Papagelis,
Panagiotis Dimitrakis
Abstract:
Single-layer Graphene (SLG) is a promising material for sensing applications. High performance graphene sensors can be achieved when Interdigitated Electrodes (IDE) are used. In this research work, we fabricated SLG micro-ribbon (GMR) devices with IDE having different geometric parameters. 1/f noise behavior was observed in all of the examined devices, and in some cases random telegraph noise (RTN…
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Single-layer Graphene (SLG) is a promising material for sensing applications. High performance graphene sensors can be achieved when Interdigitated Electrodes (IDE) are used. In this research work, we fabricated SLG micro-ribbon (GMR) devices with IDE having different geometric parameters. 1/f noise behavior was observed in all of the examined devices, and in some cases random telegraph noise (RTN) signals suggesting that carrier trapping/de-trapping is taking place. Our experimental results indicate that the geometrical characteristics can have a crucial impact on device performance, due to the direct area dependence of the noise level.
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Submitted 3 February, 2025;
originally announced February 2025.
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Effect of Al2O3 on the operation of SiNX-based MIS RRAMs
Authors:
A. E. Mavropoulis,
N. Vasileiadis,
P. Normand,
C. Theodorou,
G. Ch. Sirakoulis,
S. Kim,
P. Dimitrakis
Abstract:
The role of a 3 nm Al2O3 layer on top of stoichiometric LPCVD SiNx MIS RRAM cells is investigated by using various electrical characterization techniques. The conductive filament formation is explained, and a compact model is used to fit the current voltage curves and find its evolution during each operation cycle. The conduction in SiNx is also studied.
The role of a 3 nm Al2O3 layer on top of stoichiometric LPCVD SiNx MIS RRAM cells is investigated by using various electrical characterization techniques. The conductive filament formation is explained, and a compact model is used to fit the current voltage curves and find its evolution during each operation cycle. The conduction in SiNx is also studied.
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Submitted 3 February, 2025;
originally announced February 2025.
