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Kondo Effect in Micron Size Device Fabricated From Flakes of Mn Doped Bi2Se3 Topological Insulator
Authors:
Vishal K. Maurya,
Jeetendra K. Tiwari,
S. Ghosh,
S. Patnaik
Abstract:
Single crystals of Mn0.03Bi1.97Se3 were synthesized by modified Bridgman technique and phase purity was confirmed via XRD analysis. EDAX analysis has verified the stoichiometric ratio of elements in the sample. Sample flakes were transferred to the SiO2/Si n-type substrate by mechanical exfoliation technique. Four probe gold contacts were etched with the help of e-beam lithography by masking and l…
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Single crystals of Mn0.03Bi1.97Se3 were synthesized by modified Bridgman technique and phase purity was confirmed via XRD analysis. EDAX analysis has verified the stoichiometric ratio of elements in the sample. Sample flakes were transferred to the SiO2/Si n-type substrate by mechanical exfoliation technique. Four probe gold contacts were etched with the help of e-beam lithography by masking and lift off process. Resistivity measurement was performed in four probe configurations in 2-300 K temperature range. We report evidence for Kon-do effect in Mn0.03Bi1.97Se3 micro-flakes with Tmin of 14.4 K.
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Submitted 13 March, 2024;
originally announced March 2024.
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Magneto-transport and Berry phase in magnetically doped Bi$_{0.97-x}$Sb$_{0.03}$ single crystals
Authors:
V. K. Maurya,
Manju Mishra Patidar,
Anita Dhaka,
R. Rawat,
V. Ganesan,
R. S. Dhaka
Abstract:
We report large magnetoresistance (MR) and Shubnikov-de Haas (SdH) oscillations in single crystals of magnetically (M= Ni and Fe) doped M$_x$Bi$_{0.97-x}$Sb$_{0.03}$ ($x=$ 0, 0.02) topological insulators. The R$\bar{3}$m symmetry and phase have been confirmed by the Rietveld refinement of x-ray diffraction data. Interestingly, a magnetic field induced phase transition from semi-metallic to semi-co…
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We report large magnetoresistance (MR) and Shubnikov-de Haas (SdH) oscillations in single crystals of magnetically (M= Ni and Fe) doped M$_x$Bi$_{0.97-x}$Sb$_{0.03}$ ($x=$ 0, 0.02) topological insulators. The R$\bar{3}$m symmetry and phase have been confirmed by the Rietveld refinement of x-ray diffraction data. Interestingly, a magnetic field induced phase transition from semi-metallic to semi-conducting type is found with the energy gap around 80 meV at 15 Tesla in the $x=$ 0 sample. Moreover, we observe linear behavior of MR up to 15 Tesla in transverse mode and SdH oscillations in longitudinal mode where the field direction is with respect to the current and crystal plane. For the parent sample, we found the coherence length L$_φ=$ 12.7 nm through the fitting of MR data in transverse mode with modified H-L-N equation. The extracted frequencies of SdH oscillations using the fast Fourier transform method and Landau level (LL) fan diagram are found to be consistent for the parent and Ni doped samples. The determined Fermi surface area is found to be slightly larger in Ni doped as compared to the parent sample possibly due to change in the Fermi energy. The Kohler's plot indicates a single scattering mechanism below 100 K. More importantly, the analysis with the help of LL fan diagram reveals the non-zero Berry phase $φ_{\rm B}= -$(1$\pm$0.1)$π$, which demonstrates the non-trivial topological states near the Dirac point in the parent and Ni doped samples.
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Submitted 22 July, 2020; v1 submitted 28 April, 2020;
originally announced April 2020.
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Growth and Characterization of Fe0.95Se0.6Te0.4 Single Crystal
Authors:
Anmol Shukla,
Vishal K. Maurya,
Rajendra S. Dhaka
Abstract:
In this paper we present the single crystal growth of Fe0.95Se0.6Te0.4 high TC superconducting sample by the modified Bridgman technique. The x-ray diffraction pattern shows the single crystal nature of the sample, as only (00l) peaks are detectable. The stoichiometric composition has been verified by energy dispersive x-ray analysis. The superconducting transition temperature at 14 K was confirme…
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In this paper we present the single crystal growth of Fe0.95Se0.6Te0.4 high TC superconducting sample by the modified Bridgman technique. The x-ray diffraction pattern shows the single crystal nature of the sample, as only (00l) peaks are detectable. The stoichiometric composition has been verified by energy dispersive x-ray analysis. The superconducting transition temperature at 14 K was confirmed through DC magnetization (ZFC-FC) and resistivity measurements. By analyzing the isothermal M-H curves, we determined the value of H_c1 (0) ~360 Oe by extrapolating the data. The temperature coefficient of resistivity obtained using the power law fitting was found to be 0.6. The obtained Raman spectra at room temperature can be interpreted with the tetragonal crystal structure and space group P4/nmm.
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Submitted 7 January, 2019;
originally announced January 2019.
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Suppression of transport spin-polarization of surface states with emergence of ferromagnetism in Mn-doped Bi2Se3
Authors:
Suman Kamboj,
Shekhar Das,
Anshu Sirohi,
Rajeswari Roy Chowdhury,
Sirshendu Gayen,
Vishal K. Maurya,
Satyabrata Patnaik,
Goutam Sheet
Abstract:
The surface states of topological insulators (TI) are protected by time reversal symmetry and they display intrinsic spin helicity where the momentum of the charge carriers decides their spin states. As a consequence, a current injected through the surface states becomes spin polarized and this transport spin-polarization leads to a proportionate suppression of Andreev reflection in superconductor…
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The surface states of topological insulators (TI) are protected by time reversal symmetry and they display intrinsic spin helicity where the momentum of the charge carriers decides their spin states. As a consequence, a current injected through the surface states becomes spin polarized and this transport spin-polarization leads to a proportionate suppression of Andreev reflection in superconductor/TI junctions. Here we show that upon doping Bi2Se3 with Mn, the transport spin-polarization is seen to be monotonically suppressed. The parent compound Bi2Se3 is found to exhibit a transport spin-polarization of about 63% whereas crystals with 10% Mn doping show transport spin-polarization of about 48%. This suppression is accompanied by an increasing ferromagnetic order of the crystals with Mn doping. Scanning tunneling spectroscopy shows that the topological protection of the surface states reduce due to Mn doping. The net measured transport spin-polarization is due to a competition of this effect with the increased magnetization on Mn doping. The present results provide important insights for the choice of magnetic topological insulators for spintronic applications.
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Submitted 18 July, 2018;
originally announced July 2018.
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Enhanced Ferromagnetism in Lacey Reduced Graphene Oxide Nano-ribbon
Authors:
Vikrant Sahu,
V. K. Maurya,
S. Patnaik,
Gurmeet Singha,
Raj Kishore Sharma
Abstract:
Incorporation of magnetism in graphene based compounds holds great promise for potential spintronic applications. By optimizing point defects and high edge density of defects, we report many-fold increase in the ferromagnetic saturation moment in lacey reduced graphene oxide nanoribbons (LRGONR) as compared to other graphene derivatives. The samples were synthesized using chemical unzipping method…
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Incorporation of magnetism in graphene based compounds holds great promise for potential spintronic applications. By optimizing point defects and high edge density of defects, we report many-fold increase in the ferromagnetic saturation moment in lacey reduced graphene oxide nanoribbons (LRGONR) as compared to other graphene derivatives. The samples were synthesized using chemical unzipping methodology. Detailed structural and morphological characterizations are discussed that include XRD, Raman, SEM, HRTEM and XPS measurements. Brilluoin function analysis to magnetization data reflects best fit for J = 7/2 with a saturation moment of 1.1 emu/g. The microscopic origin of magnetization in LRGONR is assigned to high edge defect density which has also been correlated to microstructure.
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Submitted 18 May, 2017;
originally announced May 2017.
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Superconductivity by Sr Intercalation in Layered Topological Insulator Bi2Se3
Authors:
Shruti,
V. K. Maurya,
P. Neha,
P. Srivastava,
S. Patnaik
Abstract:
Strontium intercalation between van der Waals bonded layers of topological insulator Bi2Se3 is found to induce superconductivity with a maximum Tc of 2.9 K. Transport measurement on single crystal of optimally doped sample Sr0.1Bi2Se3 shows weak anisotropy (1.5) and upper critical field Hc2(0) equals to 2.1 T for magnetic field applied per-pendicular to c -axis of the sample. The Ginzburg-Landau c…
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Strontium intercalation between van der Waals bonded layers of topological insulator Bi2Se3 is found to induce superconductivity with a maximum Tc of 2.9 K. Transport measurement on single crystal of optimally doped sample Sr0.1Bi2Se3 shows weak anisotropy (1.5) and upper critical field Hc2(0) equals to 2.1 T for magnetic field applied per-pendicular to c -axis of the sample. The Ginzburg-Landau coherence lengths are Xi-ab = 15.3 Å and Xi_c = 10.2 Å. The lower critical field and zero temperature penetration depth Lambda(0) are estimated to be 0.35 mT and 1550 nm respectively. Hall and Seebeck measurements confirm the dominance of electronic conduction and the carrier concentration is surprisingly low (n = 1.85 x 10^19 cm-3) at 10 K indicating possibility of unconventional superconductivity.
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Submitted 20 May, 2015;
originally announced May 2015.
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Effect of pressure on superconductivity in doped topological crystalline insulator Sn0.5In0.5Te
Authors:
V. K. Maurya,
R. Jha,
Shruti,
V. P. S. Awana,
S. Patnaik
Abstract:
We report on the impact of hydrostatic pressure on the superconductivity of optimally (Indium) doped SnTe which is established to be derived from a topological crystalline insulating phase. Single crystals of Sn1-xInxTe were synthesized by a modified Bridgman method that exhibited maximum superconducting Tc of 4.4 K for x= 0.5. Hydrostatic pressure upto 2.5 GPa was applied on the crystals of Sn0.5…
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We report on the impact of hydrostatic pressure on the superconductivity of optimally (Indium) doped SnTe which is established to be derived from a topological crystalline insulating phase. Single crystals of Sn1-xInxTe were synthesized by a modified Bridgman method that exhibited maximum superconducting Tc of 4.4 K for x= 0.5. Hydrostatic pressure upto 2.5 GPa was applied on the crystals of Sn0.5In0.5Te and electrical resistivity as a function of temperature and pressure was measured. We observed decrease in onset superconducting transition temperature from 4.4 K to 2.8 K on increasing pressure from ambient to 2.5 GPa. The normal state resistivity also decreased abruptly by an order of magnitude at 0.5 GPa but for higher pressures, the same decreased marginally. From onset, offset and zero resistivity values, dTc/dP of -0.6K/GPa was confirmed. The low temperature normal state resistivity followed T^2 dependence suggesting Fermi liquid behaviour both for ambient and high pressure data. This increase in metallic characteristics accompanied by normal state Fermi liquid behaviour is in accordance with a dome structure for Tc variation with varying carrier concentration.
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Submitted 9 March, 2015;
originally announced March 2015.
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Electromagnetic Properties of Topological Crystalline Superconductor Sn0.5In0.5Te
Authors:
V. K. Maurya,
Shruti,
P. Srivastava,
S. Patnaik
Abstract:
We report on the superconducting properties of In doped SnTe which has recently been explored as a topological crystalline superconductor. Single crystals of Sn0.5In0.5Te have been synthesized by modified Bridgman method. Resistivity measurement performed in the range 1.6K to 300K shows metallic normal state with onset of superconducting transition at Tc = 4.5K. Bulk superconductivity has also bee…
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We report on the superconducting properties of In doped SnTe which has recently been explored as a topological crystalline superconductor. Single crystals of Sn0.5In0.5Te have been synthesized by modified Bridgman method. Resistivity measurement performed in the range 1.6K to 300K shows metallic normal state with onset of superconducting transition at Tc = 4.5K. Bulk superconductivity has also been confirmed by DC magnetization, AC susceptibility and rf penetration depth measurements. The zero temperature upper critical field, lower critical field, coherence length, penetration depth are estimated to be 1.6T, 10Oe, 143.5 Å and 832nm respectively. Temperature dependence of low temperature penetration depth indicates S-wave fully gapped characteristics with BCS gap meV. Hall and Seebeck coefficient measurements confirm dominance of hole conduction with possible phonon-drag effects around ~45K. Resistive transition studied under the applied magnetic field shows thermally activated flux flow behavior.
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Submitted 16 June, 2014; v1 submitted 9 June, 2014;
originally announced June 2014.
