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Evidence for energy-dependent scattering dominating thermoelectricity in heavy fermion systems
Authors:
Daiki Goto,
Kentaro Kuga,
Kiyohisa Tanaka,
Tsunehiro Takeuchi,
Masaharu Matsunami
Abstract:
In the field of thermoelectric materials and devices, improving energy conversion efficiency remains a long-standing challenge. As a promising approach to address this issue, tuning the electron-scattering mechanisms beyond the ordinary constant relaxation time approximation (CRTA) has been proposed. However, direct experimental evidence for an energy-dependent scattering reflected in the Seebeck…
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In the field of thermoelectric materials and devices, improving energy conversion efficiency remains a long-standing challenge. As a promising approach to address this issue, tuning the electron-scattering mechanisms beyond the ordinary constant relaxation time approximation (CRTA) has been proposed. However, direct experimental evidence for an energy-dependent scattering reflected in the Seebeck coefficient is still lacking. Here we demonstrate using angle-resolved photoemission spectroscopy that the relaxation time of heavy fermion quasiparticles is highly dependent on the energy near the Fermi level. The observed energy dependence of the relaxation time is due to the coherent Kondo scattering, describing the sign of the Seebeck coefficient reasonably well, which cannot be deduced from CRTA. Our findings provide not only deeper insight into the understanding of thermoelectricity in correlated materials, but also new perspectives on possible orbital-selective engineering of thermoelectric materials.
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Submitted 30 May, 2025;
originally announced May 2025.
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Understanding the anomalous thermoelectric behaviour of Fe-V-W-Al based thin films
Authors:
Kavita Yadav,
Yuya Tanaka,
Kotaro Hirose,
Masahiro Adachi,
Masaharu Matsunami,
Tsunehiro Takeuchi
Abstract:
We have investigated the thermoelectric and thermal behaviour of Fe-V-W-Al based thin films prepared using radio frequency magnetron sputtering technique at different base pressures (0.1 ~ 1.0 X 10-2 Pa) and on different substrates (n, p and undoped Si). Interestingly, at lower base pressure, formation of bcc type of Heusler structure was observed in deposited samples, whereas at higher base press…
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We have investigated the thermoelectric and thermal behaviour of Fe-V-W-Al based thin films prepared using radio frequency magnetron sputtering technique at different base pressures (0.1 ~ 1.0 X 10-2 Pa) and on different substrates (n, p and undoped Si). Interestingly, at lower base pressure, formation of bcc type of Heusler structure was observed in deposited samples, whereas at higher base pressure, we have noted the development of non-Heusler amorphous structure in these samples. Our findings indicates that the moderately oxidized Fe-V-W-Al amorphous thin film deposited on n-Si substrate, possesses large magnitude of absoulte S ~ 1098 microvolt per kelvin near room temperature, which is almost the double the previously reported value for thin films. Additionally, the power factor indicated enormously large values ~ 33.9 milliwatt per meter per kelvin sqaure near 320 K. The thermal conductivity of the amorphous thin film is also found to be 2.75 watt per meter per kelvin, which is quite lower compared to bulk alloys. As a result, the maximum figure of merit is estimated to be extremely high i.e. ~ 3.9 near 320 K, which is among one of the highest reported values so far. The anomalously large value of Seebeck coefficient and power factor has been ascribed to formation of amorphous structure and composite effect of thin film and substrate.
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Submitted 19 April, 2024;
originally announced April 2024.
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Synergetic enhancement of power factor and suppression of lattice thermal conductivity via electronic structure modification and nanostructuring on Ni and B co-doped p-type Si-Ge alloy
Authors:
Muthusamy Omprakash,
Saurabh Singh,
Keisuke Hirata,
Kentaro Kuga,
Santhanakrishnan Harish,
Masaru Shimomura,
Masahiro Adachi,
Yoshiyuki Yamamoto,
Masaharu Matsunami,
Tsunehiro Takeuchi
Abstract:
For simultaneously achieving the high-power factor and low lattice thermal conductivity of Si-Ge based thermoelectric materials, we employed, in this study, constructively modifying the electronic structure near the chemical potential and nano-structuring by low temperature and high-pressure sintering on nano-crystalline powders. Nickel was doped to create the impurity states near the edge of the…
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For simultaneously achieving the high-power factor and low lattice thermal conductivity of Si-Ge based thermoelectric materials, we employed, in this study, constructively modifying the electronic structure near the chemical potential and nano-structuring by low temperature and high-pressure sintering on nano-crystalline powders. Nickel was doped to create the impurity states near the edge of the valence band for enhancing the power factor with boron for tuning the carrier concentration. The nanostructured samples with the nominal composition of Si0.65-xGe0.32Ni0.03Bx (x = 0.01, 0.02, 0.03, and 0.04) were synthesized by the mechanical alloying followed low-temperature and high-pressure sintering process. A large magnitude of Seebeck coefficient reaching 321 μVK-1 together with a small electrical resistivity of 4.49 mΩcm, leads to a large power factor of 2.3 Wm-1K-2 at 1000 K. With successfully reduced thermal conductivity down to 1.47 Wm-1K-1, a large value of ZT ~1.56 was obtained for Si0.65-xGe0.32Ni0.03B0.03 at 1000 K
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Submitted 29 July, 2021;
originally announced July 2021.
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Capacitor Type Thin-Film Heat Flow Switching Device
Authors:
Keisuke Hirata,
Takuya Matsunaga,
Saurabh Singh,
Masaharu Matsunami,
Tsunehiro Takeuchi
Abstract:
We developed a capacitor type heat flow switching device, in which electron thermal conductivity of the electrodes is actively controlled through the carrier concentration varied by an applied bias voltage. The devices consist of an amorphous p-type Si-Ge-Au alloy layer, an amorphous SiO$_2$ as the dielectric layer, and a n-type Si substrate. Both amorphous materials are characterized by very low…
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We developed a capacitor type heat flow switching device, in which electron thermal conductivity of the electrodes is actively controlled through the carrier concentration varied by an applied bias voltage. The devices consist of an amorphous p-type Si-Ge-Au alloy layer, an amorphous SiO$_2$ as the dielectric layer, and a n-type Si substrate. Both amorphous materials are characterized by very low lattice thermal conductivity, less than 1 Wm-1K-1. The Si-Ge-Au amorphous layer with 40 nm in thickness was deposited by means of molecular beam deposition technique on the 100 nm thick SiO$_2$ layer formed at the top surface of Si substrate. Bias voltage-dependent thermal conductivity and heat flow density of the fabricated device were evaluated by a time-domain thermoreflectance method at room temperature. Consequently, we observed a 55 percent increase in thermal conductivity.
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Submitted 21 March, 2021;
originally announced March 2021.
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Distinctive Thermoelectric Properties of Supersaturated Si-Ge-P Compounds: Achieving Figure of Merit ZT > 3.6
Authors:
Swapnil Ghodke,
Omprakash Muthusamy,
Kevin Delime Codrin,
Seongho Choi,
Saurabh Singh,
Dogyun Byeon,
Masahiro Adachi,
Makoto Kiyama,
Takashi Matsuura,
Yoshiyuki Yamamoto,
Masaharu Matsunami,
Tsunehiro Takeuchi
Abstract:
The efficiency of energy conversion in thermoelectric generators (TEGs) is directly proportional to electrical conductivity and Seebeck coefficient while inversely to thermal conductivity. The challenge is to optimize these interdependent parameters simultaneously. In this work, the problem is addressed with a novel approach of nanostructuring and constructive electronic structure modification to…
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The efficiency of energy conversion in thermoelectric generators (TEGs) is directly proportional to electrical conductivity and Seebeck coefficient while inversely to thermal conductivity. The challenge is to optimize these interdependent parameters simultaneously. In this work, the problem is addressed with a novel approach of nanostructuring and constructive electronic structure modification to achieve a very high value of dimensionless figure of merit ZT greater than 3.6 at 1000 K with negative Seebeck coefficient. Supersaturated solid-solutions of Si-Ge containing 1 atomic percent Fe and 10 atomic percent P are prepared by high-energy ball milling. The bulk samples consisting of ultra-fine nano-crystallites 9.7 nm are obtained by the sophisticated low-temperature & high-pressure sintering process. Despite that the electrical resistivity is slightly high due to the localization of electrons is associated with the highly disordered structure and low electrical density of states near the chemical potential, a very low thermal conductivity \k{appa} less than 1 W m-1K-1 and very large magnitude of Seebeck coefficient exceeding 470 uV K-1 are achieved in association with the nanostructuring and the Fe 3d impurity states, respectively, to realize a very large magnitude of ZT.
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Submitted 26 September, 2019;
originally announced September 2019.
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Change of Fermi surface states related with two different $T_{\rm c}$-raising mechanisms in iron pnictide superconductor
Authors:
A. Takemori,
T. Hajiri,
S. Miyasaka,
Z. H. Tin,
T. Adachi,
S. Ideta,
K. Tanaka,
M. Matsunami,
S. Tajima
Abstract:
Evolution of Fermi surface (FS) states of NdFeAs$_{1-x}$P$_x$O$_{0.9}$F$_{0.1}$ single crystals with As/P substitution has been investigated. The critical temperature $T_{\rm c}$ and the power law exponent ($n$) of temperature-dependent resistivity ($ρ(T) = ρ_0 + AT^n$) show a clear correlation above $x=$0.2, suggesting that $T_{\rm c}$ is enhanced with increasing bosonic fluctuation in the same t…
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Evolution of Fermi surface (FS) states of NdFeAs$_{1-x}$P$_x$O$_{0.9}$F$_{0.1}$ single crystals with As/P substitution has been investigated. The critical temperature $T_{\rm c}$ and the power law exponent ($n$) of temperature-dependent resistivity ($ρ(T) = ρ_0 + AT^n$) show a clear correlation above $x=$0.2, suggesting that $T_{\rm c}$ is enhanced with increasing bosonic fluctuation in the same type of FS state. Around $x=$0.2, all the transport properties show anomalies, indicating that $x$$\sim$0.2 is the critical composition of drastic FS change. The angle resolved photoemission spectroscopy has more directly revealed the distinct change of FS around $x=$0.2, that one hole FS disappears at Brillouin zone center and the other FS with propeller like shape appears at zone corner with decreasing $x$. These results are indicative of the existence of two types of FS state with different nesting conditions that are related with two $T_{\rm c}$-rising mechanisms in this system.
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Submitted 10 September, 2018; v1 submitted 30 August, 2018;
originally announced August 2018.
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Direct observation of heterogeneous valence state in Yb-based quasicrystalline approximants
Authors:
M. Matsunami,
M. Oura,
K. Tamasaku,
T. Ishikawa,
S. Ideta,
K. Tanaka,
T. Takeuchi,
T. Yamada,
A. P. Tsai,
K. Imura,
K. Deguchi,
N. K. Sato,
T. Ishimasa
Abstract:
We study the electronic structure of Tsai-type cluster-based quasicrystalline approximants, Au$_{64}$Ge$_{22}$Yb$_{14}$ (AGY-I), Au$_{63.5}$Ge$_{20.5}$Yb$_{16}$ (AGY-II), and Zn$_{85.4}$Yb$_{14.6}$ (Zn-Yb), by means of photoemission spectroscopy. In the valence band hard x-ray photoemission spectra of AGY-II and Zn-Yb, we separately observe a fully occupied Yb 4$f$ state and a valence fluctuation…
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We study the electronic structure of Tsai-type cluster-based quasicrystalline approximants, Au$_{64}$Ge$_{22}$Yb$_{14}$ (AGY-I), Au$_{63.5}$Ge$_{20.5}$Yb$_{16}$ (AGY-II), and Zn$_{85.4}$Yb$_{14.6}$ (Zn-Yb), by means of photoemission spectroscopy. In the valence band hard x-ray photoemission spectra of AGY-II and Zn-Yb, we separately observe a fully occupied Yb 4$f$ state and a valence fluctuation derived Kondo resonance peak, reflecting two inequivalent Yb sites, a single Yb atom in the cluster center and its surrounding Yb icosahedron, respectively. The fully occupied 4$f$ signal is absent in AGY-I containing no Yb atom in the cluster center. The results provide direct evidence for a heterogeneous valence state in AGY-II and Zn-Yb.
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Submitted 11 December, 2017;
originally announced December 2017.
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Large-gap magnetic topological heterostructure formed by subsurface incorporation of a ferromagnetic layer
Authors:
Toru Hirahara,
Sergey V. Eremeev,
Tetsuroh Shirasawa,
Yuma Okuyama,
Takayuki Kubo,
Ryosuke Nakanishi,
Ryota Akiyama,
Akari Takayama,
Tetsuya Hajiri,
Shin-ichiro Ideta,
Masaharu Matsunami,
Kazuki Sumida,
Koji Miyamoto,
Yasumasa Takagi,
Kiyohisa Tanaka,
Taichi Okuda,
Toshihiko Yokoyama,
Shin-ichi Kimura,
Shuji Hasegawa,
Evgueni V. Chulkov
Abstract:
Inducing magnetism into topological insulators is intriguing for utilizing exotic phenomena such as the quantum anomalous Hall effect (QAHE) for technological applications. While most studies have focused on doping magnetic impurities to open a gap at the surface-state Dirac point, many undesirable effects have been reported to appear in some cases that makes it difficult to determine whether the…
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Inducing magnetism into topological insulators is intriguing for utilizing exotic phenomena such as the quantum anomalous Hall effect (QAHE) for technological applications. While most studies have focused on doping magnetic impurities to open a gap at the surface-state Dirac point, many undesirable effects have been reported to appear in some cases that makes it difficult to determine whether the gap opening is due to the time-reversal symmetry breaking or not. Furthermore, the realization of the QAHE has been limited to low temperatures. Here we have succeeded in generating a massive Dirac cone in a MnBi2Se4 /Bi2Se3 heterostructure which was fabricated by self-assembling a MnBi2Se4 layer on top of the Bi2Se3 surface as a result of the co-deposition of Mn and Se. Our experimental results, supported by relativistic ab initio calculations, demonstrate that the fabricated MnBi2Se4 /Bi2Se3 heterostructure shows ferromagnetism up to room temperature and a clear Dirac-cone gap opening of ~100 meV without any other significant changes in the rest of the band structure. It can be considered as a result of the direct interaction of the surface Dirac cone and the magnetic layer rather than a magnetic proximity effect. This spontaneously formed self-assembled heterostructure with a massive Dirac spectrum, characterized by a nontrivial Chern number C = -1, has a potential to realize the QAHE at significantly higher temperatures than reported up to now and can serve as a platform for developing future " topotronics" devices.
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Submitted 6 September, 2017;
originally announced September 2017.
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Slater to Mott crossover in the metal to insulator transition of Nd2Ir2O7
Authors:
M. Nakayama,
Takeshi Kondo,
Z. Tian,
J. J. Ishikawa,
M. Halim,
C. Bareille,
W. Malaeb,
K. Kuroda,
T. Tomita,
S. Ideta,
K. Tanaka,
M. Matsunami,
S. Kimura,
N. Inami,
K. Ono,
H. Kumigashira,
L. Balents,
S. Nakatsuji,
S. Shin
Abstract:
We present an angle-resolved photoemission study of the electronic structure of the three-dimensional pyrochlore iridate Nd2Ir2O7 through its magnetic metal-insulator transition. Our data reveal that metallic Nd2Ir2O7 has a quadratic band, touching the Fermi level at the Gamma point, similarly to that of Pr2Ir2O7. The Fermi node state is, therefore, a common feature of the metallic phase of the py…
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We present an angle-resolved photoemission study of the electronic structure of the three-dimensional pyrochlore iridate Nd2Ir2O7 through its magnetic metal-insulator transition. Our data reveal that metallic Nd2Ir2O7 has a quadratic band, touching the Fermi level at the Gamma point, similarly to that of Pr2Ir2O7. The Fermi node state is, therefore, a common feature of the metallic phase of the pyrochlore iridates. Upon cooling below the transition temperature, this compound exhibits a gap opening with an energy shift of quasiparticle peaks like a band gap insulator. The quasiparticle peaks are strongly suppressed, however, with further decrease of temperature, and eventually vanish at the lowest temperature, leaving a non-dispersive flat band lacking long-lived electrons. We thereby identify a remarkable crossover from Slater to Mott insulators with decreasing temperature. These observations explain the puzzling absence of Weyl points in this material, despite its proximity to the zero temperature metal-insulator transition.
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Submitted 19 March, 2016;
originally announced March 2016.
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Surface Kondo Effect and Non-Trivial Metallic State of the Kondo Insulator YbB12
Authors:
Kenta Hagiwara,
Yoshiyuki Ohtsubo,
Masaharu Matsunami,
Shin-ichiro Ideta,
Kiyohisa Tanaka,
Hidetoshi Miyazaki,
Julien Rault,
Patrick Le Fèvre,
François Bertran,
Amina Taleb-Ibrahimi,
Ryu Yukawa,
Masaki Kobayashi,
Koji Horiba,
Hiroshi Kumigashira,
Fumitoshi Iga,
Shin-ichi Kimura
Abstract:
A synergistic effect between strong electron correlation and spin-orbit interaction (SOI) has been theoretically predicted to result in a new topological state of quantum matter on Kondo insulators (KIs), so-called topological Kondo insulators (TKIs). One TKI candidate has been experimentally observed on the KI SmB6(001), and the origin of the surface states (SS) and the topological order of SmB6…
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A synergistic effect between strong electron correlation and spin-orbit interaction (SOI) has been theoretically predicted to result in a new topological state of quantum matter on Kondo insulators (KIs), so-called topological Kondo insulators (TKIs). One TKI candidate has been experimentally observed on the KI SmB6(001), and the origin of the surface states (SS) and the topological order of SmB6 has been actively discussed. Here, we show a metallic SS on the clean surface of another TKI candidate YbB12(001), using angle-resolved photoelectron spectroscopy. The SS showed temperature-dependent reconstruction corresponding with the Kondo effect observed for bulk states. Despite the low-temperature insulating bulk, the reconstructed SS with c-f hybridization was metallic, forming a closed Fermi contour surrounding $\barΓ$ on the surface Brillouin zone and agreeing with the theoretically expected behavior for SS on TKIs. These results demonstrate the temperature-dependent holistic reconstruction of two-dimensional states localized on KIs surface driven by the Kondo effect.
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Submitted 25 February, 2016;
originally announced February 2016.
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Quadratic Fermi Node in a 3D Strongly Correlated Semimetal
Authors:
Takeshi Kondo,
M. Nakayama,
R. Chen,
J. J. Ishikawa,
E. -G. Moon,
T. Yamamoto,
Y. Ota,
W. Malaeb,
H. Kanai,
Y. Nakashima,
Y. Ishida,
R. Yoshida,
H. Yamamoto,
M. Matsunami,
S. Kimura,
N. Inami,
K. Ono,
H. Kumigashira,
S. Nakatsuji,
L. Balents,
S. Shin
Abstract:
Strong spin-orbit coupling fosters exotic electronic states such as topological insulators and superconductors, but the combination of strong spin-orbit and strong electron-electron interactions is just beginning to be understood. Central to this emerging area are the 5d transition metal iridium oxides. Here, in the pyrochlore iridate Pr2Ir2O7, we identify a nontrivial state with a single point Fe…
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Strong spin-orbit coupling fosters exotic electronic states such as topological insulators and superconductors, but the combination of strong spin-orbit and strong electron-electron interactions is just beginning to be understood. Central to this emerging area are the 5d transition metal iridium oxides. Here, in the pyrochlore iridate Pr2Ir2O7, we identify a nontrivial state with a single point Fermi node protected by cubic and time-reversal symmetries, using a combination of angle-resolved photoemission spectroscopy and first principles calculations. Owing to its quadratic dispersion, the unique coincidence of four degenerate states at the Fermi energy, and strong Coulomb interactions, non-Fermi liquid behavior is predicted, for which we observe some evidence. Our discovery implies that Pr2Ir2O7 is a parent state that can be manipulated to produce other strongly correlated topological phases, such as topological Mott insulator, Weyl semi-metal, and quantum spin and anomalous Hall states.
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Submitted 16 December, 2015; v1 submitted 27 October, 2015;
originally announced October 2015.
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Temperature-Dependence of Magnetically-Active Charge Excitations in Magnetite across the Verwey Transition
Authors:
M. Taguchi,
A. Chainani,
S. Ueda,
M. Matsunami,
Y. Ishida,
R. Eguchi,
S. Tsuda,
Y. Takata,
M. Yabashi,
K. Tamasaku,
Y. Nishino,
T. Ishikawa,
H. Daimon,
S. Todo,
H. Tanaka,
M. Oura,
Y. Senba,
H. Ohashi,
S. Shin
Abstract:
We have studied the electronic structure of bulk single crystals and epitaxial films of magnetite Fe$_3$O$_4$. Fe $2p$ core-level spectra show clear differences between hard x-ray (HAX-) and soft x-ray (SX-) photoemission spectroscopy (PES), indicative of surface effects. The bulk-sensitive spectra exhibit temperature ($T$)-dependent charge excitations across the Verwey transition at $T_V$=122 K,…
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We have studied the electronic structure of bulk single crystals and epitaxial films of magnetite Fe$_3$O$_4$. Fe $2p$ core-level spectra show clear differences between hard x-ray (HAX-) and soft x-ray (SX-) photoemission spectroscopy (PES), indicative of surface effects. The bulk-sensitive spectra exhibit temperature ($T$)-dependent charge excitations across the Verwey transition at $T_V$=122 K, which is missing in the surface-sensitive spectra. An extended impurity Anderson model full-multiplet analysis reveals roles of the three distinct Fe-species (A-Fe$^{3+}$, B-Fe$^{2+}$, B-Fe$^{3+}$) below $T_V$ for the Fe $2p$ spectra, and its $T-$dependent evolution. The Fe $2p$ HAXPES spectra show a clear magnetic circular dichroism (MCD) in the metallic phase of magnetized 100-nm-thick films. The model calculations also reproduce the MCD and identify the magnetically distinct sites associated with the charge excitations. Valence band HAXPES shows finite density of states at $E_F$ for the polaronic metal with remnant order above $T_V$, and a clear gap formation below $T_V$. The results indicate that the Verwey transition is driven by changes in the strongly correlated and magnetically active B-Fe$^{2+}$ and B-Fe$^{3+}$ electronic states, consistent with resistivity and bulk-sensitive optical spectra.
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Submitted 23 November, 2015; v1 submitted 21 April, 2015;
originally announced April 2015.
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Surface Tomonaga-Luttinger liquid state on Bi/InSb(001)
Authors:
Yoshiyuki Ohtsubo,
Jun-ichiro Kishi,
Kenta Hagiwara,
Patrick Le Fèvre,
François Bertran,
Amina Taleb-Ibrahimi,
Masaharu Matsunami,
Hiroyuki Yamane,
Shin-ichiro Ideta,
Kiyohisa Tanaka,
Shin-ichi Kimura
Abstract:
A 1D metallic surface state was created on an anisotropic InSb(001) surface covered with Bi. Angle-resolved photoelectron spectroscopy (ARPES) showed a 1D Fermi contour with almost no 2D distortion. Close to the Fermi level ($E_{\rm F}$), the angle-integrated photoelectron spectra showed power-law scaling with the binding energy and temperature. The ARPES plot above $E_{\rm F}$ obtained thanks to…
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A 1D metallic surface state was created on an anisotropic InSb(001) surface covered with Bi. Angle-resolved photoelectron spectroscopy (ARPES) showed a 1D Fermi contour with almost no 2D distortion. Close to the Fermi level ($E_{\rm F}$), the angle-integrated photoelectron spectra showed power-law scaling with the binding energy and temperature. The ARPES plot above $E_{\rm F}$ obtained thanks to thermally broadened Fermi edge at room temperature showed a 1D state with continuous metallic dispersion across $E_{\rm F}$ and power-law intensity suppression around $E_{\rm F}$. These results strongly suggest a Tomonaga-Luttinger liquid on the Bi/InSb(001) surface.
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Submitted 20 November, 2015; v1 submitted 15 April, 2015;
originally announced April 2015.
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Electronic structure of Mott-insulator CaCu3Ti4O12: Photoemission and inverse photoemission study
Authors:
H. J. Im,
M. Iwataki,
S. Yamazaki,
T. Usui,
S. Adachi,
M. Tsunekawa,
T. Watanabe,
K. Takegahara,
S. Kimura,
M. Matsunami,
H. Sato,
H. Namatame,
M. Taniguchi
Abstract:
We have performed the photoemission and inverse photoemission experiments to elucidate the origin of Mott insulating states in A-site ordered perovskite CaCu$_3$Ti$_4$O$_{12}$ (CCTO). Experimental results have revealed that Cu 3$d$-O 2$p$ hybridized bands, which are located around the Fermi level in the prediction of the local-density approximation (LDA) band calculations, are actually separated i…
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We have performed the photoemission and inverse photoemission experiments to elucidate the origin of Mott insulating states in A-site ordered perovskite CaCu$_3$Ti$_4$O$_{12}$ (CCTO). Experimental results have revealed that Cu 3$d$-O 2$p$ hybridized bands, which are located around the Fermi level in the prediction of the local-density approximation (LDA) band calculations, are actually separated into the upper Hubbard band at $\sim$ 1.5 eV and the lower Hubbard band at $\sim$ $-$1.7 eV with a band gap of $\sim$ 1.5-1.8 eV. We also observed that Cu 3$d$ peak at $\sim$ $-$3.8 eV and Ti 3$d$ peak at $\sim$ 3.8 eV are further away from each other than as indicated in the LDA calculations. In addition, it is found that the multiplet strucutre around $-$9 eV includes a considerable number of O 2$p$ states. These observations indicate that the Cu 3$d$ and Ti 3$d$ electrons hybridized with the O 2$p$ states are strongly correlated, which originates in the Mott-insulating states of CCTO.
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Submitted 17 May, 2015; v1 submitted 15 April, 2015;
originally announced April 2015.
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Anomalous Superconducting-Gap Structure of Slightly Overdoped Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$
Authors:
T. Hajiri,
T. Ito,
M. Matsunami,
B. H. Min,
Y. S. Kwon,
S. Kimura
Abstract:
We observed the anisotropic superconducting-gap (SC-gap) structure of a slightly overdoped superconductor, Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$ ($x=0.1$), using three-dimensional (3D) angle-resolved photoemission spectroscopy. Two hole Fermi surfaces (FSs) observed at the Brillouin zone center and an inner electron FS at the zone corner showed a nearly isotropic SC gap in 3D momentum space. Howeve…
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We observed the anisotropic superconducting-gap (SC-gap) structure of a slightly overdoped superconductor, Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$ ($x=0.1$), using three-dimensional (3D) angle-resolved photoemission spectroscopy. Two hole Fermi surfaces (FSs) observed at the Brillouin zone center and an inner electron FS at the zone corner showed a nearly isotropic SC gap in 3D momentum space. However, the outer electron FS showed an anisotropic SC gap with nodes or gap minima around the M and A points. The different anisotropies obtained the SC gap between the outer and inner electron FSs cannot be expected from all theoretical predictions with spin fluctuation, orbital fluctuation, and both competition. Our results provide a new insight into the SC mechanisms of iron pnictide superconductors.
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Submitted 19 August, 2014;
originally announced August 2014.
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Polarization-Dependent Three-Dimensional Angle-Resolved Photoemission Spectroscopy of BaFe$_{1.8}$Co$_{0.2}$As$_{2}$
Authors:
Tetsuya Hajiri,
Takahiro Ito,
Masaharu Matsunami,
Byeong Hun Min,
Yong Seung Kwon,
Shin-ichi Kimura
Abstract:
We performed polarization- and photon-energy-dependent angle-resolved photoemission spectroscopy of a slightly overdoped iron pnictide superconductor, BaFe$_{1.8}$Co$_{0.2}$As$_{2}$, to clarify the three-dimensional electronic structure including its orbital characters at the Brillouin zone center. Two hole Fermi surfaces (FSs) with $d_{xz/yz}$ and $d_{xy/x^2-y^2}$ orbitals were observed but…
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We performed polarization- and photon-energy-dependent angle-resolved photoemission spectroscopy of a slightly overdoped iron pnictide superconductor, BaFe$_{1.8}$Co$_{0.2}$As$_{2}$, to clarify the three-dimensional electronic structure including its orbital characters at the Brillouin zone center. Two hole Fermi surfaces (FSs) with $d_{xz/yz}$ and $d_{xy/x^2-y^2}$ orbitals were observed but $d_{z^2}$ hole FS, which has nodes according to a theory of the spin-fluctuation superconductivity mechanism, did not appear. These results suggest that no node will appear at hole FSs at the zone center.
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Submitted 20 November, 2013;
originally announced November 2013.
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Electronic Structure Reconstruction across the Antiferromagnetic Transition in TaFe$_{1.23}$Te$_3$ Spin Ladder
Authors:
M. Xu,
Li-Min Wang,
R. Peng,
Q. Q. Ge,
F. Chen,
Z. R. Ye,
Y. Zhang,
S. D. Chen,
M. Xia,
R. H. Liu,
M. Arita,
K. Shimada,
H. Namatame,
M. Taniguchi,
M. Matsunami,
S. Kimura,
M. Shi,
Wei Ku,
X. H. Chen,
Wei-Guo Yin,
B. P. Xie,
D. L. Feng
Abstract:
With angle-resolved photoemission spectroscopy, we studied the electronic structure of TaFe$_{1.23}$Te$_3$, which is a two-leg spin ladder compound with a novel antiferromagnetic ground state. Quasi-two-dimensional Fermi surface is observed, indicating sizable inter-ladder hopping, which would facilitate the in-plane ferromagnetic ordering through double exchange interactions. Moreover, an energy…
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With angle-resolved photoemission spectroscopy, we studied the electronic structure of TaFe$_{1.23}$Te$_3$, which is a two-leg spin ladder compound with a novel antiferromagnetic ground state. Quasi-two-dimensional Fermi surface is observed, indicating sizable inter-ladder hopping, which would facilitate the in-plane ferromagnetic ordering through double exchange interactions. Moreover, an energy gap is not observed at the Fermi surface in the antiferromagnetic state. Instead, the shifts of various bands have been observed. Combining these observations with density-functional-theory calculations, we propose that the large scale reconstruction of the electronic structure, caused by the interactions between the coexisting itinerant electrons and local moments, is most likely the driving force behind the magnetic transition. TaFe$_{1.23}$Te$_3$ thus provides a simpler system that contains similar ingredients as the parent compounds of iron-based superconductors, which yet could be readily modeled and understood.
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Submitted 28 October, 2013;
originally announced October 2013.
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Microscopic mechanism for asymmetric charge distribution in Rashba-type surface states and the origin of the the energy splitting scale
Authors:
Beomyoung Kim,
Panjin Kim,
Wonsig Jung,
Yeongkwan Kim,
Yoonyoung Koh,
Wonshik Kyung,
Joonbum Park,
Masaharu Matsunami,
Shin-ichi Kimura,
Jun Sung Kim,
Jung Hoon Han,
Changyoung Kim
Abstract:
Microscopic mechanism for the Rashba-type band splitting is examined in detail. We show how asymmetric charge distribution is formed when local orbital angular momentum (OAM) and crystal momentum get interlocked due to surface effects. An electrostatic energy term in the Hamiltonian appears when such OAM and crystal momentum dependent asymmetric charge distribution is placed in an electric field p…
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Microscopic mechanism for the Rashba-type band splitting is examined in detail. We show how asymmetric charge distribution is formed when local orbital angular momentum (OAM) and crystal momentum get interlocked due to surface effects. An electrostatic energy term in the Hamiltonian appears when such OAM and crystal momentum dependent asymmetric charge distribution is placed in an electric field produced from an inversion symmetry breaking (ISB). Analysis by using an effective Hamiltonian shows that, as the atomic spin-orbit coupling (SOC) strength increases from weak to strong, originally OAM-quenched states evolve into well-defined chiral OAM states and then to total angular momentum J-states. In addition, the energy scale of the band splitting changes from atomic SOC energy to electrostatic energy. To confirm the validity of the model, we study OAM and spin structures of Au(111) system by using an effective Hamiltonian for the d-orbitals case. As for strong SOC regime, we choose Bi2Te2Se as a prototype system. We performed circular dichroism angle resolved photoemission spectroscopy experiments as well as first-principles calculations. We find that the effective model can explain various aspects of spin and OAM structures of the system.
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Submitted 2 September, 2013;
originally announced September 2013.
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An ARPES Study of the Electronic Structure of the Quantum Spin Liquid EtMe3Sb[Pd(dmit)2]2
Authors:
Q. Q. Ge,
H. C. Xu,
X. P. Shen,
M. Xia,
B. P. Xie,
F. Chen,
Y. Zhang,
R. Kato,
T. Tsumuraya,
T. Miyazaki,
M. Matsunami,
S. Kimura,
D. L. Feng
Abstract:
The electronic structure of a quantum spin liquid compound, EtMe3Sb[Pd(dmit)2]2, has been studied with angle-resolved photoemission spectroscopy, together with two other Pd(dmit)2 salts in the valence bond solid or antiferromagnetic state. We have resolved several bands that have negligible dispersions and fit well to the calculated energy levels of an isolated [Pd(dmit)2]2 dimer. EtMe3Sb[Pd(dmit)…
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The electronic structure of a quantum spin liquid compound, EtMe3Sb[Pd(dmit)2]2, has been studied with angle-resolved photoemission spectroscopy, together with two other Pd(dmit)2 salts in the valence bond solid or antiferromagnetic state. We have resolved several bands that have negligible dispersions and fit well to the calculated energy levels of an isolated [Pd(dmit)2]2 dimer. EtMe3Sb[Pd(dmit)2]2 being a Mott insulator, its lower Hubbard band is identified, and there is a small gap of ~ 50 meV between this band and the chemical potential. Moreover, the spectral features exhibit polaronic behavior with anomalously broad linewidth. Compared with existing theories, our results suggest that strong electron-boson interactions, together with smaller hopping and on-site Coulomb interaction terms have to be considered for a realistic modeling of the organic quantum spin liquid systems like the Pd(dmit)2 salt.
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Submitted 5 April, 2013;
originally announced April 2013.
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Strong Correlation Effects of A-site Ordered Perovskite CaCu3Ti4O12 revealed by Angle-Resolved Photoemission Spectroscopy
Authors:
H. J. Im,
M. Tsunekawa,
T. Sakurada,
M. Iwataki,
K. Kawata,
T. Watanabe,
K. Takegahara,
H. Miyazaki,
M. Matsunami,
T. Hajiri,
S. Kimura
Abstract:
We report angle-resolved photoemission spectroscopy (ARPES) results of A-site ordered perovskite CaCu$_3$Ti$_4$O$_{12}$. We have observed the clear band dispersions, which are shifted to the higher energy by 1.7 eV and show the band narrowing around 2 eV in comparison with the local density approximation calculations. In addition, the high energy multiplet structures of Cu 3$d^8$ final-states have…
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We report angle-resolved photoemission spectroscopy (ARPES) results of A-site ordered perovskite CaCu$_3$Ti$_4$O$_{12}$. We have observed the clear band dispersions, which are shifted to the higher energy by 1.7 eV and show the band narrowing around 2 eV in comparison with the local density approximation calculations. In addition, the high energy multiplet structures of Cu 3$d^8$ final-states have been found around 8 - 13 eV. These results reveal that CaCu$_3$Ti$_4$O$_{12}$ is a Mott-type insulator caused by the strong correlation effects of the Cu 3$d$ electrons well hybridized with O 2$p$ states. Unexpectedly, there exist a very small spectral weight at the Fermi level in the insulator phase, indicating the existence of isolated metallic states.
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Submitted 25 June, 2013; v1 submitted 19 March, 2013;
originally announced March 2013.
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Magnetic origin of high-energy kink structure in heavily electron-doped Li$_{1+x}$FeAs
Authors:
T. Hajiri,
T. Ito,
R. Niwa,
S. Hirate,
M. Matsunami,
B. H. Min,
Y. S. Kwon,
S. Kimura
Abstract:
We report the origin of a high-energy kink structure of heavily electron-doped nonsuperconducting Li$_{1+x}$FeAs observed by three-dimensional angle-resolved photoemission spectroscopy. The $d_{xy}$ orbital at the center of the Brillouin zone is strongly renormalized, indicating stronger electron correlation, exceeding that of stoichiometric LiFeAs despite the fact that the orbital characters of a…
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We report the origin of a high-energy kink structure of heavily electron-doped nonsuperconducting Li$_{1+x}$FeAs observed by three-dimensional angle-resolved photoemission spectroscopy. The $d_{xy}$ orbital at the center of the Brillouin zone is strongly renormalized, indicating stronger electron correlation, exceeding that of stoichiometric LiFeAs despite the fact that the orbital characters of all bands remain unchanged. Two types of kink structure on the $d_{yz}$ band were identified: an isotropic kink at the binding energy of 20 meV, and another kink located at 100 meV observed only in the (110) direction. The higher-energy kink is considered to originate from a magnetic interaction, because the peak energy is consistent with that of a spin excitation.
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Submitted 30 January, 2013; v1 submitted 28 December, 2012;
originally announced December 2012.
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Strongly hybridized electronic structure of YbAl2: An angle-resolved photoemission study
Authors:
M. Matsunami,
T. Hajiri,
H. Miyazaki,
M. Kosaka,
S. Kimura
Abstract:
We report the electronic structure of a prototypical valence fluctuation system, YbAl2, using angle-resolved photoemission spectroscopy. The observed band dispersions and Fermi surfaces are well described in terms of band structure calculations based on local density approximation. Strong hybridization between the conduction and 4f bands is identified on the basis of the periodic Anderson model. T…
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We report the electronic structure of a prototypical valence fluctuation system, YbAl2, using angle-resolved photoemission spectroscopy. The observed band dispersions and Fermi surfaces are well described in terms of band structure calculations based on local density approximation. Strong hybridization between the conduction and 4f bands is identified on the basis of the periodic Anderson model. The evaluated small mass enhancement factor and the high Kondo temperature qualitatively agree with those obtained from thermodynamic measurements. Such findings suggest that the strong hybridization suppresses band renormalization and is responsible for the valence fluctuations in YbAl2.
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Submitted 30 April, 2013; v1 submitted 27 October, 2012;
originally announced October 2012.
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Photoemission Evidence for Valence Fluctuations and Kondo Resonance in YbAl2
Authors:
M. Matsunami,
A. Chainani,
M. Taguchi,
R. Eguchi,
Y. Takata,
M. Oura,
M. Yabashi,
K. Tamasaku,
Y. Nishino,
T. Ishikawa,
M. Kosaka,
S. Shin
Abstract:
We use hard x-ray photoemission spectroscopy (HAXPES) to investigate the electronic structure of YbAl2, for which the Yb valence has not been consistently reported to date. The bulk sensitivity and the analytical simplicity provided by the Yb 3d core-level HAXPES allow a reliable determination of the mean valence of Yb ions. For YbAl2, it is evaluated to be +2.20, which remains nearly unchanged be…
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We use hard x-ray photoemission spectroscopy (HAXPES) to investigate the electronic structure of YbAl2, for which the Yb valence has not been consistently reported to date. The bulk sensitivity and the analytical simplicity provided by the Yb 3d core-level HAXPES allow a reliable determination of the mean valence of Yb ions. For YbAl2, it is evaluated to be +2.20, which remains nearly unchanged below 300 K. The Kondo resonance peak with an extremely high Kondo temperature (above 2000 K) is clearly identified in the valence-band spectra. The results indicate that a coherent Kondo state can be robust even in a nearly divalent system.
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Submitted 8 June, 2012;
originally announced June 2012.
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Pressure suppression of unconventional charge-density-wave state in PrRu4P12 studied by optical conductivity
Authors:
H. Okamura,
N. Ohta,
A. Takigawa,
I. Matsutori,
K. Shoji,
K. Miyata,
M. Matsunami,
H. Sugawara,
C. Sekine,
I. Shirotani,
H. Sato,
T. Moriwaki,
Y. Ikemoto,
Z. Liu,
G. L. Carr
Abstract:
Optical conductivity s(w) of PrRu4P12 has been studied under high pressure to 14 GPa, at low temperatures to 8 K, and at photon energies 12 meV-1.1 eV. The energy gap in s(w) at ambient pressure, caused by a metal-insulator transition due to an unconventional charge-density-wave formation at 63 K, is gradually filled in with increasing pressure to 10 GPa. At 14 GPa and below 30 K, s(w) exhibits a…
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Optical conductivity s(w) of PrRu4P12 has been studied under high pressure to 14 GPa, at low temperatures to 8 K, and at photon energies 12 meV-1.1 eV. The energy gap in s(w) at ambient pressure, caused by a metal-insulator transition due to an unconventional charge-density-wave formation at 63 K, is gradually filled in with increasing pressure to 10 GPa. At 14 GPa and below 30 K, s(w) exhibits a pronounced Drude-type component due to free carriers. This indicates that the initial insulating ground state at zero pressure has been turned into a metallic one at 14 GPa. This is consistent with a previous resistivity study under pressure, where the resistivity rapidly decreased with cooling below 30 K at 14 GPa. The evolution of electronic structure with pressure is discussed in terms of the hybridization between the 4f and conduction electrons.
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Submitted 23 April, 2012; v1 submitted 14 February, 2012;
originally announced February 2012.
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Observation of warping effects in the band and angular momentum structures of topological insulator Bi2Te3
Authors:
Wonsig Jung,
Yeongkwan Kim,
Beomyoung Kim,
Yoonyoung Koh,
Chul Kim,
Masaharu Matsunami,
Shin-ichi Kimura,
Masashi Arita,
Kenya Shimada,
Jung Hoon Han,
Juyoung Kim,
Beongki Cho,
Changyoung Kim
Abstract:
We performed angle resolved photoemission (ARPES) experiments on Bi2Te3 with circularly polarized light. ARPES data show very strong circular dichroism, indicating existence of orbital angular momentum (OAM). Moreover, the alignment of OAM is found to have a strong binding energy dependence. Such energy dependence comes from a relatively strong band warping effect in Bi2Te3 compared to Bi2Se3. OAM…
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We performed angle resolved photoemission (ARPES) experiments on Bi2Te3 with circularly polarized light. ARPES data show very strong circular dichroism, indicating existence of orbital angular momentum (OAM). Moreover, the alignment of OAM is found to have a strong binding energy dependence. Such energy dependence comes from a relatively strong band warping effect in Bi2Te3 compared to Bi2Se3. OAM close to Dirac point has an ideal chiral structure (sin ?) without out-of-plane component. Warping effect comes in as the binding energy decreases and circular dichroism along a constant energy contour can no longer be explained by a simple sin? function but requires a sin3? term. When the warping effect becomes even stronger near the Fermi energy, circular dichroism gains an additional sin6? term. Such behavior is found to be compatible with the theoretically predicted OAM structure.
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Submitted 13 December, 2011; v1 submitted 12 December, 2011;
originally announced December 2011.
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Optical study of charge instability in CeRu2Al10 in comparison with CeOs2Al10 and CeFe2Al10
Authors:
Shin-ichi Kimura,
Takuya Iizuka,
Hidetoshi Miyazaki,
Tetsuya Hajiri,
Masaharu Matsunami,
Tatsuya Mori,
Akinori Irizawa,
Yuji Muro,
Junpei Kajino,
Toshiro Takabatake
Abstract:
The anisotropic electronic structure responsible for the antiferromagnetic transition in CeRu$_2$Al$_{10}$ at the unusually high temperature of $T_0$ = 28 K was studied using optical conductivity spectra, Ce 3d X-ray photoemission spectra, and band calculation. It was found that the electronic structure in the $ac$ plane is that of a Kondo semiconductor, whereas that along the b axis has a nesting…
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The anisotropic electronic structure responsible for the antiferromagnetic transition in CeRu$_2$Al$_{10}$ at the unusually high temperature of $T_0$ = 28 K was studied using optical conductivity spectra, Ce 3d X-ray photoemission spectra, and band calculation. It was found that the electronic structure in the $ac$ plane is that of a Kondo semiconductor, whereas that along the b axis has a nesting below 32 K (slightly higher than $T_0$). These characteristics are the same as those of CeOs$_2$Al$_{10}$ [S. Kimura {\it et al.}, Phys. Rev. Lett. 106, 056404 (2011).]. The $c$-$f$ hybridization intensities between the conduction and $4f$ electrons of CeRu$_2$Al$_{10}$ and CeOs$_2$Al$_{10}$ are weaker than that of CeFe$_2$Al$_{10}$, showing no magnetic ordering. These results suggest that the electronic structure with one-dimensional weak $c$-$f$ hybridization along the b axis combined with two-dimensional strong hybridization in the $ac$ plane causes charge-density wave (CDW) instability, and the CDW state then induces magnetic ordering.
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Submitted 24 August, 2011;
originally announced August 2011.
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Kondo Resonance in PrTi2Al20: Photoemission spectroscopy and single-impurity Anderson model
Authors:
M. Matsunami,
M. Taguchi,
A. Chainani,
R. Eguchi,
M. Oura,
A. Sakai,
S. Nakatsuji,
S. Shin
Abstract:
The Kondo resonance at the Fermi level is well-established for the electronic structure of Ce (f1 electron) and Yb (f1 hole) based systems. In this work, we report complementary experimental and theoretical studies on the Kondo resonance in Pr-based f2 system, PrTi2Al20. Using Pr 3d-4f resonant photoemission spectroscopy and single impurity Anderson model (SIAM) calculations including the full mul…
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The Kondo resonance at the Fermi level is well-established for the electronic structure of Ce (f1 electron) and Yb (f1 hole) based systems. In this work, we report complementary experimental and theoretical studies on the Kondo resonance in Pr-based f2 system, PrTi2Al20. Using Pr 3d-4f resonant photoemission spectroscopy and single impurity Anderson model (SIAM) calculations including the full multiplets of Pr ions, we show that an f2 system can also give rise to a Kondo resonance at the Fermi level. The Kondo resonance peak is experimentally observed through a final-state-multiplet dependent resonance and is reproduced with properly tuned hybridization strength in SIAM calculations.
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Submitted 8 November, 2011; v1 submitted 10 August, 2011;
originally announced August 2011.
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Optical Conductivity and Electronic Structure of CeRu4Sb12 under High Pressure
Authors:
H. Okamura,
R. Kitamura,
M. Matsunami,
H. Sugawara,
H. Harima,
H. Sato,
T. Moriwaki,
Y. Ikemoto,
T. Nanba
Abstract:
Optical conductivity [s(w)] of Ce-filled skutterudite CeRu4Sb12 has been measured at high pressure to 8 GPa and at low temperature, to probe the pressure evolution of its electronic structures. At ambient pressure, a mid-infrared peak at 0.1 eV was formed in s(w) at low temperature, and the spectral weight below 0.1 eV was strongly suppressed, due to a hybridization of the f electron and conductio…
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Optical conductivity [s(w)] of Ce-filled skutterudite CeRu4Sb12 has been measured at high pressure to 8 GPa and at low temperature, to probe the pressure evolution of its electronic structures. At ambient pressure, a mid-infrared peak at 0.1 eV was formed in s(w) at low temperature, and the spectral weight below 0.1 eV was strongly suppressed, due to a hybridization of the f electron and conduction electron states. With increasing external pressure, the mid-infrared peak shifts to higher energy, and the spectral weight below the peak was further depleted. The obtained spectral data are analyzed in comparison with band calculation result and other reported physical properties. It is shown that the electronic structure of CeRu4Sb12 becomes similar to that of a narrow-gap semiconductor under external pressure.
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Submitted 12 January, 2012; v1 submitted 3 March, 2011;
originally announced March 2011.
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Femtosecond core level photoemision spectroscopy on 1T-TaS2 using 60 eV laser source
Authors:
K. Ishizaka,
T. Kiss,
T. Yamamoto,
Y. Ishida,
T. Saitoh,
M. Matsunami,
R. Eguchi,
T. Ohtsuki,
A. Kosuge,
T. Kanai,
M. Nohara,
H. Takagi,
S. Watanabe,
S. Shin
Abstract:
Time-resolved photoelectron spectroscopy (trPES) can directly detect transient electronic structure, thus bringing out its promising potential to clarify nonequilibrium processes arising in condensed matters. Here we report the result of core-level (CL) trPES on 1T-TaS2, realized by developing a high-intensity 60 eV laser obtained by high-order harmonic (HH) generation. Ta4f CL-trPES offers the tr…
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Time-resolved photoelectron spectroscopy (trPES) can directly detect transient electronic structure, thus bringing out its promising potential to clarify nonequilibrium processes arising in condensed matters. Here we report the result of core-level (CL) trPES on 1T-TaS2, realized by developing a high-intensity 60 eV laser obtained by high-order harmonic (HH) generation. Ta4f CL-trPES offers the transient amplitude of the charge-density-wave (CDW), via the site-selective and real-time observation of Ta electrons. The present result indicates an ultrafast photoinduced melting and recovery of CDW amplitude, followed by a peculiar long-life oscillation (i.e. collective amplitudon excitation) accompanying the transfer of 0.01 electrons among adjacent Ta atoms. CL-trPES offers a broad range of opportunities for investigating the ultrafast atom-specific electron dynamics in photo-related phenomena of interest.
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Submitted 12 December, 2010;
originally announced December 2010.
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Electronic structure of an antiferromagnetic metal: CaCrO3
Authors:
P. A. Bhobe,
A. Chainani,
M. Taguchi,
R. Eguchi,
M. Matsunami,
T. Ohtsuki,
K. Ishizaka,
M. Okawa,
M. Oura,
Y. Senba,
H. Ohashi,
M. Isobe,
Y. Ueda,
S. Shin
Abstract:
We report on the electronic structure of the perovskite oxide CaCrO3 using valence-band, core-level, and Cr 2p - 3d resonant photoemission spectroscopy (PES). Despite its antiferromagnetic order, a clear Fermi edge characteristic of a metal with dominant Cr 3d character is observed in the valence band spectrum. The Cr 3d single particle density of states are spread over 2 eV, with the photoemissio…
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We report on the electronic structure of the perovskite oxide CaCrO3 using valence-band, core-level, and Cr 2p - 3d resonant photoemission spectroscopy (PES). Despite its antiferromagnetic order, a clear Fermi edge characteristic of a metal with dominant Cr 3d character is observed in the valence band spectrum. The Cr 3d single particle density of states are spread over 2 eV, with the photoemission spectral weight distributed in two peaks centered at ~ 1.2 eV and 0.2 eV below EF, suggestive of the coherent and incoherent states resulting from strong electron-electron correlations. Resonant PES across the Cr 2p - 3d threshold identifies a 'two-hole' correlation satellite and yields an on-site Coulomb energy U ~4.8 eV. The metallic DOS at EF is also reflected through the presence of a well-screened feature at low binding energy side of the Cr 2p core-level spectrum. X-ray absorption spectroscopy (XAS) at Cr L3,2 and O K edges exhibit small temperature dependent changes that point towards a small change in Cr-O hybridization. The multiplet splitting in Cr 2p core level spectrum as well as the spectral shape of the Cr XAS can be reproduced using cluster model calculations which favour a negative value for charge transfer energy between the Cr 3d and O 2p states. The overall results indicate that CaCrO3 is a strongly hybridized antiferromagnetic metal, lying in the regime intermediate to Mott-Hubbard and charge-transfer systems.
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Submitted 10 November, 2010;
originally announced November 2010.
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Nanoscale Dichotomy of Ti 3d Carriers Mediating the Ferromagnetism in Co:TiO2 Anatase Thin Films
Authors:
T. Ohtsuki,
A. Chainani,
R. Eguchi,
M. Matsunami,
Y. Takata,
M. Taguchi,
Y. Nishino,
K. Tamasaku,
M. Yabashi,
T. Ishikawa,
M. Oura,
Y. Senba,
H. Ohashi,
S. Shin
Abstract:
We study the surface and bulk electronic structure of the room-temperature ferromagnet Co:TiO2 anatase films using soft and hard x-ray photoemission spectroscopy with probe sensitivities of ~1 nm and ~10 nm, respectively. We obtain direct evidence of metallic Ti$^{3+}$ states in the bulk, which get suppressed to give a surface semiconductor, thus indicating a surface-bulk dichotomy. X-ray absorpti…
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We study the surface and bulk electronic structure of the room-temperature ferromagnet Co:TiO2 anatase films using soft and hard x-ray photoemission spectroscopy with probe sensitivities of ~1 nm and ~10 nm, respectively. We obtain direct evidence of metallic Ti$^{3+}$ states in the bulk, which get suppressed to give a surface semiconductor, thus indicating a surface-bulk dichotomy. X-ray absorption and high-sensitivity resonant photoemission spectroscopy reveal Ti$^{3+}$ electrons at the Fermi level (E$_F$) and high-spin Co$^{2+}$ electrons occurring away from E$_F$. The results show the importance of the charge neutrality condition: Co$^{2+}$ + V$_{O}$$^{2-}$ + 2Ti$^{4+}$ $\leftrightarrow$ Co$^{2+}$ + 2Ti$^{3+}$ (V$_O$ is oxygen vacancy), which gives rise to the elusive Ti 3d carriers mediating ferromagnetism via the Co 3d-O 2p-Ti 3d exchange interaction pathway of the occupied orbitals.
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Submitted 11 August, 2010;
originally announced August 2010.
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Evidence for a correlated insulator to antiferromagnetic metal transition in CrN
Authors:
P. A. Bhobe,
A. Chainani,
M. Taguchi,
T. Takeuchi,
R. Eguchi,
M. Matsunami,
K. Ishizaka,
Y. Takata,
M. Oura,
Y. Senba,
H. Ohashi,
Y. Nishino,
M. Yabashi,
K. Tamasaku,
T. Ishikawa,
K. Takenaka,
H. Takagi,
S. Shin
Abstract:
We investigate the electronic structure of Chromium Nitride (CrN) across the first-order magneto-structural transition at T_N ~ 286 K. Resonant photoemission spectroscopy shows a gap in the 3d partial density of states at the Fermi level and an On-site Coulomb energy U ~ 4.5 eV, indicating strong electron-electron correlations. Bulk-sensitive high resolution (6 meV) laser photoemission reveals a c…
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We investigate the electronic structure of Chromium Nitride (CrN) across the first-order magneto-structural transition at T_N ~ 286 K. Resonant photoemission spectroscopy shows a gap in the 3d partial density of states at the Fermi level and an On-site Coulomb energy U ~ 4.5 eV, indicating strong electron-electron correlations. Bulk-sensitive high resolution (6 meV) laser photoemission reveals a clear Fermi edge indicating an antiferromagnetic metal below T_N. Hard x-ray Cr 2p core-level spectra show T-dependent changes across T_N which originate from screening due to coherent states as substantiated by cluster model calculations using the experimentally observed U. The electrical resistivity confirms an insulator above T_N (E_g ~ 70 meV) which becomes a disordered metal below T_N. The results indicate CrN transforms from a correlated insulator to an antiferromagnetic metal, coupled to the magneto-structural transition.
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Submitted 31 March, 2010;
originally announced April 2010.
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Evidence for Oxygen Holes due to d-p Rehybridization in Thermoelectric Sr_{1-x}Rh_{2}O_{4}
Authors:
Y. Ishida,
T. Baba,
R. Eguchi,
M. Matsunami,
M. Taguchi,
A. Chainani,
Y. Senba,
H. Ohashi,
Y. Okamoto,
H. Takagi,
S. Shin
Abstract:
Soft-x-ray photoemission and absorption spectroscopies are employed to investigate the electronic structures of Sr_{1-x}Rh_{2}O_{4}. Similarly to the layered cobaltates such as Na_{1-x}CoO_{2}, a valence-band satellite feature (VBS) occurs at higher binding energy to the O 2p band. We find that the VBS resonates at the O 1s edge. Additionally, core absorption shows clear x dependence in the O 1s…
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Soft-x-ray photoemission and absorption spectroscopies are employed to investigate the electronic structures of Sr_{1-x}Rh_{2}O_{4}. Similarly to the layered cobaltates such as Na_{1-x}CoO_{2}, a valence-band satellite feature (VBS) occurs at higher binding energy to the O 2p band. We find that the VBS resonates at the O 1s edge. Additionally, core absorption shows clear x dependence in the O 1s edge rather than in the Rh 3p edge. These results indicate that the holes in the initial state mainly have O 2p character presumably due to d-p rehybridizations affected by Sr^{2+} vacancy potentials. The resultant inhomogenous charge texture may have impact on the TE transport properties at low x.
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Submitted 30 July, 2009;
originally announced July 2009.
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Pressure Tuning of an Ionic Insulator into a Heavy Electron Metal: An Infrared Study of YbS
Authors:
M. Matsunami,
H. Okamura,
A. Ochiai,
T. Nanba
Abstract:
Optical conductivity [$σ(ω)$] of YbS has been measured under pressure up to 20 GPa. Below 8 GPa, $σ(ω)$ is low since YbS is an insulator with an energy gap between fully occupied 4$f$ state and unoccupied conduction ($c$) band. Above 8 GPa, however, $σ(ω)$ increases dramatically, developing a Drude component due to heavy carriers and characteristic infrared peaks. It is shown that increasing pre…
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Optical conductivity [$σ(ω)$] of YbS has been measured under pressure up to 20 GPa. Below 8 GPa, $σ(ω)$ is low since YbS is an insulator with an energy gap between fully occupied 4$f$ state and unoccupied conduction ($c$) band. Above 8 GPa, however, $σ(ω)$ increases dramatically, developing a Drude component due to heavy carriers and characteristic infrared peaks. It is shown that increasing pressure has caused an energy overlap and hybridization between the $c$ band and 4$f$ state, thus driving the initially ionic and insulating YbS into a correlated metal with heavy carriers.
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Submitted 16 December, 2009; v1 submitted 27 July, 2009;
originally announced July 2009.
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Strong valence fluctuation in the quantum critical heavy fermion superconductor beta-YbAlB4: A hard x-ray photoemission study
Authors:
M. Okawa,
M. Matsunami,
K. Ishizaka,
R. Eguchi,
M. Taguchi,
A. Chainani,
Y. Takata,
M. Yabashi,
K. Tamasaku,
Y. Nishino,
T. Ishikawa,
K. Kuga,
N. Horie,
S. Nakatsuji,
S. Shin
Abstract:
Electronic structures of the quantum critical superconductor beta-YbAlB4 and its polymorph alpha-YbAlB4 are investigated by using bulk-sensitive hard x-ray photoemission spectroscopy. From the Yb 3d core level spectra, the values of the Yb valence are estimated to be ~2.73 and ~2.75 for alpha- and beta-YbAlB4, respectively, thus providing clear evidence for valence fluctuations. The valence band s…
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Electronic structures of the quantum critical superconductor beta-YbAlB4 and its polymorph alpha-YbAlB4 are investigated by using bulk-sensitive hard x-ray photoemission spectroscopy. From the Yb 3d core level spectra, the values of the Yb valence are estimated to be ~2.73 and ~2.75 for alpha- and beta-YbAlB4, respectively, thus providing clear evidence for valence fluctuations. The valence band spectra of these compounds also show Yb2+ peaks at the Fermi level. These observations establish an unambiguous case of a strong mixed valence at quantum criticality for the first time among heavy fermion systems, calling for a novel scheme for a quantum critical model beyond the conventional Doniach picture in beta-YbAlB4.
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Submitted 14 June, 2010; v1 submitted 26 June, 2009;
originally announced June 2009.
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Fermi surfaces, electron-hole asymmetry and correlation kink in a three-dimensional Fermi liquid LaNiO$_3$
Authors:
R. Eguchi,
A. Chainani,
M. Taguchi,
M. Matsunami,
Y. Ishida,
K. Horiba,
Y. Senba,
H. Ohashi,
S. Shin
Abstract:
We report the three-dimensional (3-D) momentum-resolved soft x-ray photoemission spectroscopy of the Fermi liquid LaNiO$_3$. The out-of-plane and in-plane cuts of the 3-D electron- and hole-Fermi surfaces (FSs) are observed by energy- and angle- dependent photoemission measurements. The energy bands forming the electron FS suggest an $ω^2$ dependence of the imaginary part of the self-energy and…
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We report the three-dimensional (3-D) momentum-resolved soft x-ray photoemission spectroscopy of the Fermi liquid LaNiO$_3$. The out-of-plane and in-plane cuts of the 3-D electron- and hole-Fermi surfaces (FSs) are observed by energy- and angle- dependent photoemission measurements. The energy bands forming the electron FS suggest an $ω^2$ dependence of the imaginary part of the self-energy and a `correlation kink' at an energy scale of 0.25 eV. In contrast, the bands which form nesting character hole FSs do not show kinks and match local density approximation calculations. The results indicate a momentum-dependent mass renormalization, leading to electron-hole asymmetry in strongly correlated LaNiO$_3$.
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Submitted 9 March, 2009;
originally announced March 2009.
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Anomalous State Sandwiched between Fermi Liquid and Charge Ordered Mott-Insulating Phases of Ti4O7
Authors:
M. Taguchi,
A. Chainani,
M. Matsunami,
R. Eguchi,
Y. Takata,
M. Yabashi,
K. Tamasaku,
Y. Nishino,
T. Ishikawa,
S. Tsuda,
S. Watanabe,
C. -T. Chen,
Y. Senba,
H. Ohashi,
K. Fujiwara,
Y. Nakamura,
H. Takagi,
S. Shin
Abstract:
The Magneli phase Ti4O7 exhibits two sharp jumps in resistivity with coupled structural transitions as a function of temperature at Tc1=142 K and Tc2=154 K. We have studied electronic structure changes across the two transitions using 7 eV laser, soft x-ray and hard x-ray (HX) photoemission spectroscopy (PES). Ti 2p-3d resonant PES and HX-PES show a clear metallic Fermi-edge and mixed valency ab…
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The Magneli phase Ti4O7 exhibits two sharp jumps in resistivity with coupled structural transitions as a function of temperature at Tc1=142 K and Tc2=154 K. We have studied electronic structure changes across the two transitions using 7 eV laser, soft x-ray and hard x-ray (HX) photoemission spectroscopy (PES). Ti 2p-3d resonant PES and HX-PES show a clear metallic Fermi-edge and mixed valency above Tc2. The low temperature phase below Tc1 shows a clear insulating gap of 100 meV. The intermediate phase between Tc1 and Tc2 indicates a pseudogap coexisting with remnant coherent states. HX-PES and complementary calculations have confirmed the coherent screening in the strongly correlated intermediate phase. The results suggest existence of a highly anomalous state sandwiched between the mixed-valent Fermi liquid and charge ordered Mott-insulating phase in Ti4O7.
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Submitted 21 February, 2009;
originally announced February 2009.
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Combining photoemission and optical spectroscopies for reliable valence determination in YbS and Yb metal
Authors:
M. Matsunami,
A. Chainani,
M. Taguchi,
R. Eguchi,
Y. Ishida,
Y. Takata,
H. Okamura,
T. Nanba,
M. Yabashi,
K. Tamasaku,
Y. Nishino,
T. Ishikawa,
Y. Senba,
H. Ohashi,
A. Ochiai,
S. Shin
Abstract:
Hard x-ray photoemission and optical spectroscopies have been performed on YbS and Yb metal to determine the precise $f$-electron occupation. A comparison of the photoemission spectra with the energy loss functions in bulk and surface, obtained from optical reflectivity, enables us to distinguish between the energy loss satellite of Yb$^{2+}$ peak and Yb$^{3+}$ multiplet. The results clearly ind…
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Hard x-ray photoemission and optical spectroscopies have been performed on YbS and Yb metal to determine the precise $f$-electron occupation. A comparison of the photoemission spectra with the energy loss functions in bulk and surface, obtained from optical reflectivity, enables us to distinguish between the energy loss satellite of Yb$^{2+}$ peak and Yb$^{3+}$ multiplet. The results clearly indicate a purely divalent Yb state except for the surface of YbS. We demonstrate that the present method is highly reliable in identifying the electronic structure and the mean valence in $f$-electron systems.
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Submitted 26 September, 2008;
originally announced September 2008.
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Recoil Effect of Photoelectrons in the Fermi-Edge of Simple Metals
Authors:
Y. Takata,
Y. Kayanuma,
S. Oshima,
S. Tanaka,
M. Yabashi,
K. Tamasaku,
Y. Nishino,
M. Matsunami,
R. Eguchi,
A. Chainani,
M. Oura,
T. Takeuchi,
Y. Senba,
H. Ohashi,
S. Shin,
T. Ishikawa
Abstract:
High energy resolution photoelectron spectroscopy of conduction electrons in the vicinity of the Fermi-edge in Al and Au at the excitation energy of 880 and 7940 eV was carried out using synchrotron radiation. For the excitation energy of 7940 eV, the observed Fermi energy of Al shows a remarkable shift to higher binding energy as compared with that of Au, with accompanying broadening. This is d…
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High energy resolution photoelectron spectroscopy of conduction electrons in the vicinity of the Fermi-edge in Al and Au at the excitation energy of 880 and 7940 eV was carried out using synchrotron radiation. For the excitation energy of 7940 eV, the observed Fermi energy of Al shows a remarkable shift to higher binding energy as compared with that of Au, with accompanying broadening. This is due to the recoil effect of the emitted photoelectrons. The observed spectra are well reproduced by a simple model of Bloch electrons based on the isotropic Debye model.
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Submitted 23 July, 2008;
originally announced July 2008.
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Remote hole-doping of Mott insulators on the nanometer scale
Authors:
M. Takizawa,
Y. Hotta,
T. Susaki,
Y. Ishida,
H. Wadati,
Y. Takata,
K. Horiba,
M. Matsunami,
S. Shin,
M. Yabashi,
K. Tamasaku,
N. Nishino,
T. Ishikawa,
A. Fujimori,
H. Y. Hwang
Abstract:
At interfaces between polar and nonpolar perovskite oxides, an unusual electron-doping has been previously observed, due to electronic reconstructions. We report on remote hole-doping at an interface composed of only polar layers, revealed by high-resolution hard x-ray core-level photoemission spectroscopy. In LaAlO3/LaVO3/LaAlO3 trilayers, the vanadium valence systematically evolves from the bu…
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At interfaces between polar and nonpolar perovskite oxides, an unusual electron-doping has been previously observed, due to electronic reconstructions. We report on remote hole-doping at an interface composed of only polar layers, revealed by high-resolution hard x-ray core-level photoemission spectroscopy. In LaAlO3/LaVO3/LaAlO3 trilayers, the vanadium valence systematically evolves from the bulk value of V3+ to higher oxidation states with decreasing LaAlO3 cap layer thickness. These results provide a synthetic approach to hole-doping transition metal oxide heterointerfaces without invoking a polar discontinuity.
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Submitted 13 June, 2008;
originally announced June 2008.
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Coherent and Incoherent States of Electron-doped SrTiO3
Authors:
Y. Ishida,
R. Eguchi,
M. Matsunami,
K. Horiba,
M. Taguchi,
A. Chainani,
Y. Senba,
H. Ohashi,
H. Ohta,
S. Shin
Abstract:
Resonant photoemission at the Ti 2p and O 1s edges on a Nb-doped SrTiO3 thin film revealed that the coherent state (CS) at the Fermi level (EF) had mainly Ti 3d character whereas the incoherent in-gap state (IGS) positioned ~1.5 eV below EF had mixed character of Ti 3d and O 2p states. This indicates that the IGS is formed by a spectral-weight transfer from the CS and subsequent spectral-weight…
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Resonant photoemission at the Ti 2p and O 1s edges on a Nb-doped SrTiO3 thin film revealed that the coherent state (CS) at the Fermi level (EF) had mainly Ti 3d character whereas the incoherent in-gap state (IGS) positioned ~1.5 eV below EF had mixed character of Ti 3d and O 2p states. This indicates that the IGS is formed by a spectral-weight transfer from the CS and subsequent spectral-weight redistribution through d-p hybridization. We discuss the evolution of the excitation spectrum with 3d band filling and rationalize the IGS through a mechanism similar to that proposed by Haldane and Anderson.
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Submitted 18 December, 2007;
originally announced December 2007.
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Revisiting the valence-band and core-level photoemission spectra of NiO
Authors:
M. Taguchi,
M. Matsunami,
Y. Ishida,
R. Eguchi,
A. Chainani,
Y. Takata,
M. Yabashi,
K. Tamasaku,
Y. Nishino,
T. Ishikawa,
Y. Senba,
H. Ohashi,
S. Shin
Abstract:
We have re-examined the valence-band (VB) and core-level electronic structure of NiO by means of hard and soft x-ray photoemission spectroscopy (PES). The spectral weight of the lowest energy state found to be enhanced in the bulk sensitive Ni 2p core-level PES. A configuration-interaction model including the bound state screening has shown significant agreement with the core-level spectra, and…
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We have re-examined the valence-band (VB) and core-level electronic structure of NiO by means of hard and soft x-ray photoemission spectroscopy (PES). The spectral weight of the lowest energy state found to be enhanced in the bulk sensitive Ni 2p core-level PES. A configuration-interaction model including the bound state screening has shown significant agreement with the core-level spectra, and the off and on-resonance VB spectra. These results identify the lowest energy state in core-level and VB-PES as the Zhang-Rice doublet bound state, consistent with the spin-fermion model and recent ab initio calculation with dynamical mean-field theory (LDA + DMFT).
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Submitted 20 May, 2008; v1 submitted 2 August, 2007;
originally announced August 2007.
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Hard x-ray photoemission study of LaAlO3/LaVO3 multilayers
Authors:
H. Wadati,
Y. Hotta,
A. Fujimori,
T. Susaki,
H. Y. Hwang,
Y. Takata,
K. Horiba,
M. Matsunami,
S. Shin,
M. Yabashi,
K. Tamasaku,
Y. Nishino,
T. Ishikawa
Abstract:
We have studied the electronic structure of multilayers composed of a band insulator LaAlO$_3$ (LAO) and a Mott insulator LaVO$_3$ (LVO) by means of hard x-ray photoemission spectroscopy, which has a probing depth as large as $\sim 60 Å$. The Mott-Hubbard gap of LVO remained open at the interface, indicating that the interface is insulating unlike the LaTiO$_3$/SrTiO$_3$ multilayers. We found th…
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We have studied the electronic structure of multilayers composed of a band insulator LaAlO$_3$ (LAO) and a Mott insulator LaVO$_3$ (LVO) by means of hard x-ray photoemission spectroscopy, which has a probing depth as large as $\sim 60 Å$. The Mott-Hubbard gap of LVO remained open at the interface, indicating that the interface is insulating unlike the LaTiO$_3$/SrTiO$_3$ multilayers. We found that the valence of V in LVO were partially converted from V$^{3+}$ to V$^{4+}$ only at the interface on the top side of the LVO layer and that the amount of V$^{4+}$ increased with LVO layer thickness. We suggest that the electronic reconstruction to eliminate the polarity catastrophe inherent in the polar heterostructure is the origin of the highly asymmetric valence change at the LVO/LAO interfaces.
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Submitted 13 April, 2007;
originally announced April 2007.
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Hard X-ray Cu $2p$ Core-Level Photoemission of High-$T_c$ Cuprate Superconductors
Authors:
M. Taguchi,
M. Matsunami,
A. Chainani,
K. Horiba,
Y. Takata,
K. Yamamoto,
R. Eguchi,
M. Yabashi,
K. Tamasaku,
Y. Nishino,
T. Nishio,
H. Uwe,
T. Mochiku,
K. Hirata,
J. Hori,
K. Ishii,
F. Nakamura,
T. Suzuki,
S. Shin,
T. Ishikawa
Abstract:
We have performed a detailed study of Cu $2p$ core-level spectra in single layer La$_{2-x}$Sr$_{x}$CuO$_{4}$, La doped Bi$_2$Sr$_{1.6}$La$_{0.4}$CuO$_{6+δ}$ (Bi2201) and bilayer Bi$_2$Sr$_{2}$CaCu$_{2}$O$_{8+δ}$ (Bi2212) high-temperature superconductors by using hard x-ray photoemission (HX-PES). We identify the Cu$^{2+}$ derived (i) the Zhang-Rice singlet (ZRS) feature, (ii) the…
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We have performed a detailed study of Cu $2p$ core-level spectra in single layer La$_{2-x}$Sr$_{x}$CuO$_{4}$, La doped Bi$_2$Sr$_{1.6}$La$_{0.4}$CuO$_{6+δ}$ (Bi2201) and bilayer Bi$_2$Sr$_{2}$CaCu$_{2}$O$_{8+δ}$ (Bi2212) high-temperature superconductors by using hard x-ray photoemission (HX-PES). We identify the Cu$^{2+}$ derived (i) the Zhang-Rice singlet (ZRS) feature, (ii) the $d^{n+1}\underline{L}$ (ligand screened) feature, (iii) the $d^{n}$ satellite feature, as well as the hole-doping derived high binding energy feature in the main peak.
In Bi-based cuprates, intensities of the $d^{n}$ satellite features seem to be strongly enhanced compared to La$_{2-x}$Sr$_{x}$CuO$_{4}$. From x-ray photon energy dependent measurements, it is shown that the increased intensity in the satellite region is associated with Bi $4s$ core-level spectral intensity. The corrected $d^{n}$ satellite intensity is independent of the doping content or number of Cu-O layers. Our results suggest a correlation of the relative intensity of ZRS feature and hole-doping induced high binding energy spectral changes in the main peak with superconductivity.
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Submitted 28 December, 2006;
originally announced December 2006.
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Pressure-tuning of the c-f hybridization in Yb metal detected by infrared spectroscopy up to 18 GPa
Authors:
H. Okamura,
K. Senoo,
M. Matsunami,
T. Nanba
Abstract:
It has been known that the elemental Yb, a divalent metal at mbient pressure, becomes a mixed-valent metal under external pressure, with its valence reaching ~2.6 at 30 GPa. In this work, infrared spectroscopy has been used to probe the evolution of microscopic electronic states associated with the valence crossover in Yb at external pressures up to 18 GPa. The measured infrared reflectivity spe…
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It has been known that the elemental Yb, a divalent metal at mbient pressure, becomes a mixed-valent metal under external pressure, with its valence reaching ~2.6 at 30 GPa. In this work, infrared spectroscopy has been used to probe the evolution of microscopic electronic states associated with the valence crossover in Yb at external pressures up to 18 GPa. The measured infrared reflectivity spectrum R(w) of Yb has shown large variations with pressure. In particular, R(w) develops a deep minimum in the mid-infrared, which shifts to lower energy with increasing pressure. The dip is attributed to optical absorption due to a conduction c-f electron hybridization state, similarly to those previously observed for heavy fermion compounds. The red shift of the dip indicates that the $c$-$f$ hybridization decreases with pressure, which is consistent with the increase of valence.
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Submitted 6 September, 2006;
originally announced September 2006.
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Photoemission evidence for a Mott-Hubbard metal-insulator transition in VO$_2$
Authors:
R. Eguchi,
M. Taguchi,
M. Matsunami,
K. Horiba,
K. Yamamoto,
Y. Ishida,
A. Chainani,
Y. Takata,
M. Yabashi,
D. Miwa,
Y. Nishino,
K. Tamasaku,
T. Ishikawa,
Y. Senba,
H. Ohashi,
Y. Muraoka,
Z. Hiroi,
S. Shin
Abstract:
The temperature ($T$) dependent metal-insulator transition (MIT) in VO$_2$ is investigated using bulk sensitive hard x-ray ($\sim$ 8 keV) valence band, core level, and V 2$p-3d$ resonant photoemission spectroscopy (PES). The valence band and core level spectra are compared with full-multiplet cluster model calculations including a coherent screening channel. Across the MIT, V 3$d$ spectral weigh…
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The temperature ($T$) dependent metal-insulator transition (MIT) in VO$_2$ is investigated using bulk sensitive hard x-ray ($\sim$ 8 keV) valence band, core level, and V 2$p-3d$ resonant photoemission spectroscopy (PES). The valence band and core level spectra are compared with full-multiplet cluster model calculations including a coherent screening channel. Across the MIT, V 3$d$ spectral weight transfer from the coherent ($d^1\underbar{\it {C}}$ final) states at Fermi level to the incoherent ($d^{0}+d^1\underbar{\it {L}}$ final) states, corresponding to the lower Hubbard band, lead to gap-formation. The spectral shape changes in V 1$s$ and V 2$p$ core levels as well as the valence band are nicely reproduced from a cluster model calculations, providing electronic structure parameters. Resonant-PES finds that the $d^1\underbar{\it{L}}$ states resonate across the V 2$p-3d$ threshold in addition to the $d^{0}$ and $d^1\underbar{\it {C}}$ states. The results support a Mott-Hubbard transition picture for the first order MIT in VO$_2$.
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Submitted 30 July, 2008; v1 submitted 27 July, 2006;
originally announced July 2006.
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Universal scaling in the dynamical conductivity of heavy fermion Ce and Yb compounds
Authors:
H. Okamura,
T. Watanabe,
M. Matsunami,
T. Nishihara,
N. Tsujii,
T. Ebihara,
H. Sugawara,
H. Sato,
Y. Onuki,
Y. Isikakwa,
T. Takabatake,
T. Nanba
Abstract:
Dynamical conductivity spectra s(w) have been measured for a diverse range of heavy-fermion (HF) Ce and Yb compounds. A characteristic excitation peak has been observed in the mid-infrared region of s(w) for all the compounds, and has been analyzed in terms of a simple model based on conduction (c)-f electron hybridized band. A universal scaling is found between the observed peak energies and th…
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Dynamical conductivity spectra s(w) have been measured for a diverse range of heavy-fermion (HF) Ce and Yb compounds. A characteristic excitation peak has been observed in the mid-infrared region of s(w) for all the compounds, and has been analyzed in terms of a simple model based on conduction (c)-f electron hybridized band. A universal scaling is found between the observed peak energies and the estimated c-f hybridization strengths of these HF compounds. This scaling demonstrates that the model of c-f hybridized band can generally and quantitatively describe the charge excitation spectra of a wide range of HF compounds.
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Submitted 1 February, 2007; v1 submitted 26 April, 2006;
originally announced April 2006.
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Electronic structure of semiconducting CeFe$_4$P$_{12}$: Strong hybridization and relevance of single-impurity Anderson model
Authors:
M. Matsunami,
K. Horiba,
M. Taguchi,
K. Yamamoto,
A. Chainani,
Y. Takata,
Y. Senba,
H. Ohashi,
M. Yabashi,
K. Tamasaku,
Y. Nishino,
D. Miwa,
T. Ishikawa,
E. Ikenaga,
K. Kobayashi,
H. Sugawara,
H. Sato,
H. Harima,
S. Shin
Abstract:
Semiconducting skutterudite CeFe$_4$P$_{12}$ is investigated by synchrotron x-ray photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). Ce 3$d$ core-level PES and 3$d-4f$ XAS, in combination with single impurity Anderson model (SIAM) calculations, confirm features due to $f^0$, $f^1$ and $f^2$ configurations. The Ce 4$f$ density of states (DOS) indicates absence of a Kondo re…
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Semiconducting skutterudite CeFe$_4$P$_{12}$ is investigated by synchrotron x-ray photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). Ce 3$d$ core-level PES and 3$d-4f$ XAS, in combination with single impurity Anderson model (SIAM) calculations, confirm features due to $f^0$, $f^1$ and $f^2$ configurations. The Ce 4$f$ density of states (DOS) indicates absence of a Kondo resonance at Fermi level, but can still be explained by SIAM with a small gap in non-$f$ DOS. While Ce 4$f$ partial DOS from band structure calculations are also consistent with the main Ce 4$f$ DOS, the importance of SIAM for core and valence spectra indicates Kondo semiconducting mixed valence for CeFe$_4$P$_{12}$, derived from strong hybridization between non-$f$ conduction and Ce 4$f$ DOS.
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Submitted 6 January, 2006;
originally announced January 2006.
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Temperature dependent Eu 3d-4f X-ray Absorption and Resonant Photoemission Study of the Valence Transition in $EuNi_2(Si_{0.2}Ge_{0.8})_2$
Authors:
K. Yamamoto,
K. Horiba,
M. Taguchi,
M. Matsunami,
N. Kamakura,
A. Chainani,
Y. Takata,
K. Mimura,
M. Shiga,
H. Wada,
Y. Senba,
H. Ohashi,
S. Shin
Abstract:
We study the mixed valence transition ($T$$_{v}$ $\sim$80 K) in EuNi$_{2}$(Si$_{0.2}$Ge$_{0.8}$)$_{2}$ using Eu 3$d-4f$ X-ray absorption spectroscopy (XAS) and resonant photoemission spectroscopy (RESPES). The Eu$^{2+}$ and Eu$^{3+}$ main peaks show a giant resonance and the spectral features match very well with atomic multiplet calculations. The spectra show dramatic temperature ($T$)-dependen…
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We study the mixed valence transition ($T$$_{v}$ $\sim$80 K) in EuNi$_{2}$(Si$_{0.2}$Ge$_{0.8}$)$_{2}$ using Eu 3$d-4f$ X-ray absorption spectroscopy (XAS) and resonant photoemission spectroscopy (RESPES). The Eu$^{2+}$ and Eu$^{3+}$ main peaks show a giant resonance and the spectral features match very well with atomic multiplet calculations. The spectra show dramatic temperature ($T$)-dependent changes over large energies ($\sim$10 eV) in RESPES and XAS. The observed non-integral mean valencies of $\sim$2.35 $\pm$ 0.03 ($T$ = 120 K) and $\sim$2.70 $\pm$ 0.03 ($T$ = 40 K) indicate homogeneous mixed valence above and below $T$$_{v}$. The redistribution between Eu$^{2+}$$4f^7$+$[spd]^0$ and Eu$^{3+}$$4f^6$+$[spd]^1$ states is attributed to a hybridization change coupled to a Kondo-like volume collapse.
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Submitted 22 July, 2005;
originally announced July 2005.
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Evidence for suppressed metallicity on the surface of La2-xSrxCuO4 and Nd2-xCexCuO4
Authors:
M. Taguchi,
A. Chainani,
K. Horiba,
Y. Takata,
M. Yabashi,
K. Tamasaku,
Y. Nishino,
D. Miwa,
T. Ishikawa,
T. Takeuchi,
K. Yamamoto,
M. Matsunami,
S. Shin,
T. Yokoya,
E. Ikenaga,
K. Kobayashi,
T. Mochiku,
K. Hirata,
J. Hori,
K. Ishii,
F. Nakamura,
T. Suzuki
Abstract:
Hard X-ray Photoemission spectroscopy (PES) of copper core electronic states, with a probing depth of $\sim$60 Å, is used to show that the Zhang-Rice singlet feature is present in La$_2$CuO$_4$ but is absent in Nd$_2$CuO$_4$. Hole- and electron doping in La$_{2-x}$Sr$_x$CuO$_4$ (LSCO) and Nd$_{2-x}$Ce$_x$CuO$_4$ (NCCO) result in new well-screened features which are missing in soft X-ray PES. Imp…
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Hard X-ray Photoemission spectroscopy (PES) of copper core electronic states, with a probing depth of $\sim$60 Å, is used to show that the Zhang-Rice singlet feature is present in La$_2$CuO$_4$ but is absent in Nd$_2$CuO$_4$. Hole- and electron doping in La$_{2-x}$Sr$_x$CuO$_4$ (LSCO) and Nd$_{2-x}$Ce$_x$CuO$_4$ (NCCO) result in new well-screened features which are missing in soft X-ray PES. Impurity Anderson model calculations establish metallic screening as its origin, which is strongly suppressed within 15 $\textÅ$ of the surface. Complemented with X-ray absorption spectroscopy, the small chemical-potential shift in core levels ($\sim0.2$ eV) are shown to be consistent with modifications of valence and conduction band states spanning the band gap ($\sim1$ eV) upon hole- and electron-doping in LSCO and NCCO.
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Submitted 26 January, 2005;
originally announced January 2005.