Development of a novel Light and Ion Beam Induced Luminescence (LIBIL) setup for in-situ optical characterization of color centers in diamond
Authors:
Matija Matijević,
Livio Žužić,
Jacopo Forneris,
Zdravko Siketić
Abstract:
In this work, development of the new Laser and Ion Beam Induced Luminescence (LIBIL) experimental end-station has been presented. To systematically test the capabilities and limitations of the newly developed setup, ionoluminescence (IL) and iono-photoluminescence (IPL) measurements were performed on a type IIa optical grade and a type Ib nitrogen rich diamond. By comparing and analyzing the obtai…
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In this work, development of the new Laser and Ion Beam Induced Luminescence (LIBIL) experimental end-station has been presented. To systematically test the capabilities and limitations of the newly developed setup, ionoluminescence (IL) and iono-photoluminescence (IPL) measurements were performed on a type IIa optical grade and a type Ib nitrogen rich diamond. By comparing and analyzing the obtained spectra, it was shown that the speed of luminescence quenching has a non-trivial dependence on the ion beam current. Additionally, it was demonstrated that some spectral features characteristic of the negatively charged nitrogen-vacancy color center (i.e. NV$^-$ zero-phonon line) have been observed only during IPL measurements. This demonstrates that the unification of two separate steps, ion implantation and optical characterization, could yield new insights into dynamics of color center formation.
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Submitted 28 December, 2024;
originally announced December 2024.
Efficient fabrication of high-density ensembles of color centers via ion implantation on a hot diamond substrate
Authors:
E. Nieto Hernandez,
G. Andrini,
A. Crnjac,
M. Brajkovic,
F. Picariello,
E. Corte,
V. Pugliese,
M. Matijević,
P. Aprà,
V. Varzi,
J. Forneris,
M. Genovese,
Z. Siketic,
M. Jaksic,
S. Ditalia Tchernij
Abstract:
Nitrogen-Vacancy (NV) centers in diamond are promising systems for quantum technologies, including quantum metrology and sensing. A promising strategy for the achievement of high sensitivity to external fields relies on the exploitation of large ensembles of NV centers, whose fabrication by ion implantation is upper limited by the amount of radiation damage introduced in the diamond lattice. In th…
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Nitrogen-Vacancy (NV) centers in diamond are promising systems for quantum technologies, including quantum metrology and sensing. A promising strategy for the achievement of high sensitivity to external fields relies on the exploitation of large ensembles of NV centers, whose fabrication by ion implantation is upper limited by the amount of radiation damage introduced in the diamond lattice. In this works we demonstrate an approach to increase the density of NV centers upon the high-fluence implantation of MeV N2+ ions on a hot target substrate (>550 °C). Our results show that, with respect to room-temperature implantation, the high-temperature process increases the vacancy density threshold required for the irreversible conversion of diamond to a graphitic phase, thus enabling to achieve higher density ensembles. Furthermore, the formation efficiency of color centers was investigated on diamond substrates implanted at varying temperatures with MeV N2+ and Mg+ ions revealing that the formation efficiency of both NV centers and magnesium-vacancy (MgV) centers increases with the implantation temperature.
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Submitted 26 May, 2025; v1 submitted 30 October, 2023;
originally announced October 2023.
