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Multi-functional Wafer-Scale Van der Waals Heterostructures and Polymorphs
Authors:
M. Micica,
A. Wright,
S. Massabeau,
S. Ayari,
E. Rongione,
M. Oliveira Ribeiro,
S. Husain,
T. Denneulin,
R. Dunin-Borkowsk,
J. Tignon,
J. Mangeney,
R. Lebrun,
H. Okuno,
O. Boulle,
A. Marty,
F. Bonell,
F. Carosella,
H. Jaffres,
R. Ferreira,
J-M. George,
M. Jamet,
S. Dhillon
Abstract:
Van der Waals heterostructures have promised the realisation of artificial materials with multiple physical phenomena such as giant optical nonlinearities, spin-to-charge interconversion in spintronics and topological carrier protection, in a single layered device through an infinitely diverse set of quantum materials. However, most efforts have only focused on exfoliated material that inherently…
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Van der Waals heterostructures have promised the realisation of artificial materials with multiple physical phenomena such as giant optical nonlinearities, spin-to-charge interconversion in spintronics and topological carrier protection, in a single layered device through an infinitely diverse set of quantum materials. However, most efforts have only focused on exfoliated material that inherently limits both the dimensions of the materials and the scalability for applications. Here, we show the epitaxial growth of large area heterostructures of topological insulators (Bi2Se3), transition metal dichalcogenides (TMDs, WSe2) and ferromagnets (Co), resulting in the combination of functionalities including tuneable optical nonlinearities, spin-to-charge conversion and magnetic proximity effects. This is demonstrated through coherent phase resolved terahertz currents, bringing novel functionalities beyond those achievable in simple homostructures. In particular, we show the role of different TMD polymorphs, with the simple change of one atomic monolayer of the artificial material stack entirely changing its optical, electrical and magnetic properties. This epitaxial integration of diverse two-dimensional materials offers foundational steps towards diverse perspectives in quantum material engineering, where the material polymorph can be controlled at technological relevant scales for coupling applications in, for example, van der Waals nonlinear optics, optoelectronics, spintronics, multiferroics and coherent current control.
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Submitted 7 January, 2025;
originally announced January 2025.
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Monolayer control of spin-charge conversion in van der Waals heterostructures
Authors:
K. Abdukayumov,
O. Paull,
M. Mičica,
F. Ibrahim,
L. Vojáček,
A. Wright,
S. Massabeau,
F. Mazzola,
V. Polewczyk,
C. Jego,
R. Sharma,
C. Vergnaud,
A. Marty,
I. Gomes de Moraes,
A. Ouerghi,
H. Okuno,
A. Jana,
I. Kar,
J. Fuji,
I. Vobornik,
J. Li,
F. Bonell,
M. Chshiev,
M. Bibes,
J. -M. George
, et al. (3 additional authors not shown)
Abstract:
The diversity of 2D materials and their van der Waals (vdW) stacking presents a fertile ground for engineering novel multifunctional materials and quantum states of matter. This permits unique opportunities to tailor the electronic properties of vdW heterostructures by the insertion of only a single 2D material layer. However, such vdW materials engineering at the atomic scale has yet to be invest…
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The diversity of 2D materials and their van der Waals (vdW) stacking presents a fertile ground for engineering novel multifunctional materials and quantum states of matter. This permits unique opportunities to tailor the electronic properties of vdW heterostructures by the insertion of only a single 2D material layer. However, such vdW materials engineering at the atomic scale has yet to be investigated for spin-charge interconversion phenomena. Here, we report on the control of these effects at the monolayer level, where drastic increase in intensity and change in sign of THz spintronic emission are demonstrated by inserting a single layer of MoSe$_2$ between PtSe$_2$ and graphene in a fully epitaxial, large area stacked structure. By using a combination of spin and angle resolved photoemission and density functional theory to reveal the electronic and spin structures, we illustrate two different mechanisms relying on charge transfer and electronic hybridization for the formation of Rashba states, which are responsible for spin-charge conversion and hence the THz spintronic emission. These findings open new pathways to design, at the atomic scale, efficient THz spintronic emitters made of 2D materials and other spintronic devices based on spin-charge interconversion phenomena.
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Submitted 4 January, 2025;
originally announced January 2025.
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Inverse Rashba-Edelstein THz emission modulation induced by ferroelectricity in CoFeB/PtSe2/MoSe2//LiNbO3 systems
Authors:
S. Massabeau,
O. Paull,
A. Pezo,
F. Miljevic,
M. Mičica,
A. Grisard,
P. Morfin,
R. Lebrun,
H. Jaffrès,
S. Dhillon,
J. -M. George,
M. Jamet,
M. Bibes
Abstract:
Spintronic Terahertz emitters, based on optically triggered spin-to-charge interconversion processes, have recently emerged as novel route towards compact and efficient THz sources. Yet, the next challenge for further technologically-relevant devices remains to modulate the emission, with low-energy consumption operation. To this aim, ferroelectric materials coupled to active spin-orbit layers suc…
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Spintronic Terahertz emitters, based on optically triggered spin-to-charge interconversion processes, have recently emerged as novel route towards compact and efficient THz sources. Yet, the next challenge for further technologically-relevant devices remains to modulate the emission, with low-energy consumption operation. To this aim, ferroelectric materials coupled to active spin-orbit layers such as two-dimensional transition metal dichalcogenides are suitable candidates. In this work, we present the realization of a large area heterostructure of CoFeB/PtSe2/MoSe2 on a bi-domain LiNbO3 substrate. Using THz time-domain spectroscopy, we show that the ferroelectric polarization direction induces a sizeable modulation of the THz emission. We rationalise these experimental results by using band structure and spin accumulation calculations that are consistent with an interfacial spin-to-charge conversion mediated by inverse Rashba-Edelstein effect at the MoSe2/PtSe2 interface and being tuned by ferroelectricity in the adjacent LiNbO3 surface. This work points out the relevance of field effect spin-orbit architectures for novel THz technologies.
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Submitted 28 December, 2024;
originally announced December 2024.
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Ultrasensitive Photoresponse of Graphene Quantum Dot in the Coulomb Blockade Regime to THz Radiation
Authors:
E. Riccardi,
S. Massabeau,
F. Valmorra,
S. Messelot,
M. Rosticher,
J. Tignon,
K. Watanabe,
T. Taniguchi,
M. Delbecq,
S. Dhillon,
R. Ferreira,
S. Balibar,
T. Kontos,
J. Mangeney
Abstract:
Graphene quantum dots (GQDs) have recently attracted considerable attention, with appealing properties for terahertz (THz) technology. This includes the demonstration of large thermal bolometric effects in GQDs when illuminated by THz radiation. However, the interaction of THz photons with GQDs in the Coulomb blockade regime - single electron transport regime - remains unexplored. Here, we demonst…
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Graphene quantum dots (GQDs) have recently attracted considerable attention, with appealing properties for terahertz (THz) technology. This includes the demonstration of large thermal bolometric effects in GQDs when illuminated by THz radiation. However, the interaction of THz photons with GQDs in the Coulomb blockade regime - single electron transport regime - remains unexplored. Here, we demonstrate the ultrasensitive photoresponse to THz radiation (from <0.1 to 10 THz) of a hBN-encapsulated GQD in the Coulomb blockade regime at low temperature (170 mK). We show that THz radiation of $\sim$10 pW provides a photocurrent response in the nanoampere range, resulting from a renormalization of the chemical potential of the GQD of $\sim$0.15 meV. We attribute this photoresponse to an interfacial photogating effect. Furthermore, our analysis reveals the absence of thermal effects, opening new directions in the study of coherent quantum effects at THz frequencies in GQDs.
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Submitted 4 June, 2020;
originally announced June 2020.
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2D materials coupled to hybrid metal-dielectric waveguides for THz technology
Authors:
P. Huang,
S. Massabeau,
J. Tignon,
S. Dhillon,
A. Degiron,
J. Mangeney
Abstract:
In this letter, we propose hybrid metal-dielectric waveguides coupled to 2D materials that provide strong light-matter interaction at THz frequencies. We investigate the properties of the fundamental propagating modes and show that the strength of in-plane electric field components is maximized at the top of the dielectric strip on which the 2D material is deposited. Our simulation predicts 100 %…
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In this letter, we propose hybrid metal-dielectric waveguides coupled to 2D materials that provide strong light-matter interaction at THz frequencies. We investigate the properties of the fundamental propagating modes and show that the strength of in-plane electric field components is maximized at the top of the dielectric strip on which the 2D material is deposited. Our simulation predicts 100 % modulation of THz light by tuning the Fermi level of a graphene sheet deposited onto a 1mm-long waveguide. We also show the potential of graphene multilayers coupled to these waveguides for achieving lasing at THz frequency. Our approach is compatible with CMOS or THz quantum cascade laser technologies.
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Submitted 15 February, 2018;
originally announced February 2018.
