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On the origin of the E1 electron trap level in GaN and dilute AlxGa1-xN films
Authors:
Piotr Kruszewski,
Jose Coutinho,
Vladimir P. Markevich,
Pawel Prystawko,
Lijie Sun,
Jerzy Plesiewicz,
Chris A. Dawe,
Matthew P. Halsall,
Anthony R. Peaker
Abstract:
The results of high-resolution Laplace deep-level transient spectroscopy (L-DLTS) measurements applied to the E1 and FeGa electron traps in dilute AlxGa1-xN films (x = 0.063), grown by metal-organic vapor phase epitaxy (MOVPE) on Ammono-GaN substrates, are presented. It is shown that the electron emission signals associated with the E1 donor and the FeGa acceptor levels split into individual compo…
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The results of high-resolution Laplace deep-level transient spectroscopy (L-DLTS) measurements applied to the E1 and FeGa electron traps in dilute AlxGa1-xN films (x = 0.063), grown by metal-organic vapor phase epitaxy (MOVPE) on Ammono-GaN substrates, are presented. It is shown that the electron emission signals associated with the E1 donor and the FeGa acceptor levels split into individual components due to the aluminium fluctuations in the nearest neighbour shells around the E1 and FeGa defects. The splitting patterns observed in the L-DLTS spectra are nearly identical for both signals. Furthermore, the ratios of peak magnitudes determined from the L-DLTS analysis for both the E1 and E3 traps are consistent with calculated probabilities of finding a given number of aluminium atoms in the second nearest neighbour shell around a Ga lattice site in AlxGa1-xN with x = 0.063. These findings provide strong evidence that both the E1 and the FeGa trap states in dilute AlxGa1-xN are related to defects located in the Ga sublattice. To elucidate the origin of the E1 trap in AlxGa1-xN, we have performed a comprehensive scan of possible impurities and defects in GaN and AlxGa1-xN using hybrid density functional calculations of transition levels and their associated shifts upon substitution of Ga neighbour atoms by Al. From analysis of the results, we find that the E1 electron trap in GaN and AlxGa1-xN is most likely related to a donor transition from a carbon or molybdenum impurity atom at the gallium site, respectively.
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Submitted 12 June, 2025;
originally announced June 2025.
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Hydrogen reactions with dopants and impurities in solar silicon from first principles
Authors:
José Coutinho,
Diana Gomes,
Vitor J. B. Torres,
Tarek O. Abdul Fattah,
Vladimir P. Markevich,
Anthony R. Peaker
Abstract:
We present a theoretical account of some of the most likely hydrogen-related reactions with impurities in n-type and p-type solar-grade silicon. These include reactions with dopants and carbon, which are relevant in the context of life-time degradation of silicon solar cells, most notably of light and elevated temperature degradation (LeTID) of the cells. Among the problems addressed, we highlight…
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We present a theoretical account of some of the most likely hydrogen-related reactions with impurities in n-type and p-type solar-grade silicon. These include reactions with dopants and carbon, which are relevant in the context of life-time degradation of silicon solar cells, most notably of light and elevated temperature degradation (LeTID) of the cells. Among the problems addressed, we highlight a comparative study of acceptor-enhanced dissociation of hydrogen molecules in B- and Ga-doped material, their subsequent reaction steps toward formation of acceptor-hydrogen pairs, the proposal of mechanisms which explain the observed kinetics of photo-/carrier-induced dissociation of PH and CH pairs in n-type Si, analysis of reactions involving direct interactions between molecules with P and C, and the assignment of several electron and hole traps with detailed atomistic- and wavefunction-resolved models.
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Submitted 1 February, 2024;
originally announced February 2024.
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Theory of reactions between hydrogen and group-III acceptors in silicon
Authors:
José Coutinho,
Diana Gomes,
Vitor J. B. Torres,
Tarek O. Abdul Fattah,
Vladimir P. Markevich,
Anthony R. Peaker
Abstract:
The thermodynamics of several reactions involving atomic and molecular hydrogen with group-III acceptors is investigated. The results provide a first-principles-level account of thermally- and carrier-activated processes involving these species. Acceptor-hydrogen pairing is revisited as well. We present a refined physicochemical picture of long-range migration, compensation effects, and short-rang…
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The thermodynamics of several reactions involving atomic and molecular hydrogen with group-III acceptors is investigated. The results provide a first-principles-level account of thermally- and carrier-activated processes involving these species. Acceptor-hydrogen pairing is revisited as well. We present a refined physicochemical picture of long-range migration, compensation effects, and short-range reactions, leading to fully passivated $\equiv\textrm{Si-H}\cdots X\equiv$ structures, where $X$ is a group-III acceptor element. The formation and dissociation of acceptor-H and acceptor-H$_{2}$ complexes is considered in the context of Light and elevated Temperature Induced Degradation (LeTID) of silicon-based solar cells. Besides explaining observed trends and answering several fundamental questions regarding the properties of acceptor-hydrogen pairing, we find that the BH$_{2}$ complex is a by-product along the reaction of H$_{2}$ molecules with boron toward the formation of BH pairs (along with subtraction of free holes). The calculated changes in Helmholtz free energies upon the considered defect reactions, as well as activation barriers for BH$_{2}$ formation/dissociation (close to $\sim1$ eV) are compatible with the experimentally determined activation energies of degradation/recovery rates of Si:B-based cells during LeTID. Dihydrogenated acceptors heavier than boron are anticipated to be effective-mass-like shallow donors, and therefore, unlikely to show similar non-radiative recombination activity.
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Submitted 28 July, 2023;
originally announced July 2023.
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Dynamics of hydrogen in silicon at finite temperatures from first-principles
Authors:
Diana Gomes,
Vladimir P. Markevich,
Anthony R. Peaker,
José Coutinho
Abstract:
Hydrogen point defects in silicon still hold unsolved problems, whose disclosure is fundamental for future advances in Si technologies. Among the open issues is the mechanism for the condensation of atomic hydrogen into molecules in Si quenched from above $T\sim700\,^{\circ}$C to room temperature. Based on first-principles calculations, we investigated the thermodynamics of hydrogen monomers and d…
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Hydrogen point defects in silicon still hold unsolved problems, whose disclosure is fundamental for future advances in Si technologies. Among the open issues is the mechanism for the condensation of atomic hydrogen into molecules in Si quenched from above $T\sim700\,^{\circ}$C to room temperature. Based on first-principles calculations, we investigated the thermodynamics of hydrogen monomers and dimers at finite temperatures within the harmonic approximation. The free energies of formation indicate that the population of H$^{-}$ cannot be neglected when compared that of H$^{+}$ at high temperatures. The results allow us to propose that the formation of molecules occurs during cooling processes, in the temperature window $T\sim700\textrm{-}500\,$K, above which the molecules collide with Si-Si bonds and dissociate, and below which the fraction of H$^{-}$ becomes negligible. The formation of H$^{-}$ and most notably of a fast-diffusing neutral species could also provide an explanation for the apparent \emph{accelerated} diffusivity of atomic hydrogen at elevated temperatures in comparison to the figures extrapolated from measurements carried out at cryogenic temperatures. We finally show that the observed diffusivity of the molecules is better described upon the assumption that they are nearly free rotors, all along the minimum energy path, including at the transition state.
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Submitted 28 April, 2022;
originally announced April 2022.
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Characterisation of negative-U defects in semiconductors
Authors:
José Coutinho,
Vladimir P. Markevich,
Anthony R. Peaker
Abstract:
This review aims at providing a retrospective, as well as a description of the state-of-the-art and future prospects regarding the theoretical and experimental characterisation of negative-U defects in semiconductors. This is done by complementing the account with a description of the work that resulted in some of the most detailed, and yet more complex defect models in semiconductors. The essenti…
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This review aims at providing a retrospective, as well as a description of the state-of-the-art and future prospects regarding the theoretical and experimental characterisation of negative-U defects in semiconductors. This is done by complementing the account with a description of the work that resulted in some of the most detailed, and yet more complex defect models in semiconductors. The essential physics underlying the negative-U behaviour is presented, including electronic correlation, electron-phonon coupling, disproportionation, defect transition levels and rates. Techniques for the analysis of the experimental data and modelling are also introduced, namely defect statistics, kinetics of carrier capture and emission, defect transformation, configuration coordinate diagrams and other tools. We finally include a showcase of several works that led to the identification of some of the most impacting negative-U defects in group-IV and compound semiconductors.
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Submitted 13 May, 2020;
originally announced May 2020.
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Acceptor levels of the carbon vacancy in $4H$-SiC: combining Laplace deep level transient spectroscopy with density functional modeling
Authors:
Ivana Capan,
Tomislav Brodar,
José Coutinho,
Takeshi Ohshima,
Vladimir P. Markevich,
Anthony R. Peaker
Abstract:
We provide direct evidence that the broad Z$_{1/2}$ peak, commonly observed by conventional DLTS in as-grown and at high concentrations in radiation damaged $4H$-SiC, has two components, namely Z$_{1}$ and Z$_{2}$, with activation energies for electron emission of 0.59 and 0.67~eV, respectively. We assign these components to…
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We provide direct evidence that the broad Z$_{1/2}$ peak, commonly observed by conventional DLTS in as-grown and at high concentrations in radiation damaged $4H$-SiC, has two components, namely Z$_{1}$ and Z$_{2}$, with activation energies for electron emission of 0.59 and 0.67~eV, respectively. We assign these components to $\mathrm{Z}_{1/2}^{=}\rightarrow\mathrm{Z}_{1/2}^{-}+e^{-}\rightarrow\mathrm{Z}_{1/2}^{0}+2e^{-}$ transition sequences from negative-$U$ ordered acceptor levels of carbon vacancy (V$_{\mathrm{C}}$) defects at hexagonal/pseudo-cubic sites, respectively. By employing short filling pulses at lower temperatures, we were able to characterize the first acceptor level of V$_{\mathrm{C}}$ on both sub-lattice sites. Activation energies for electron emission of 0.48 and 0.41~eV were determined for $\mathrm{Z}_{1}(-/0)$ and $\mathrm{Z}_{2}(-/0)$ transitions, respectively. Based on trap filling kinetics and capture barrier calculations, we investigated the two-step transitions from neutral to doubly negatively charged Z$_{1}$ and Z$_{2}$. Positions of the first and second acceptor levels of V$_{\mathrm{C}}$ at both lattice sites, as well as $(=\!/0)$ occupancy levels were derived from the analysis of the emission and capture data.
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Submitted 2 January, 2019; v1 submitted 16 December, 2018;
originally announced December 2018.
