Dielectric Properties of Disordered A6B2O17 (A = Zr; B = Nb, Ta) Phases
Authors:
R. Jackson Spurling,
Saeed S. I. Almishal,
Joseph Casamento,
John Hayden,
Ryan Spangler,
Michael Marakovits,
Arafat Hossain,
Michael Lanagan,
Jon-Paul Maria
Abstract:
We report on the structure and dielectric properties of ternary A6B2O17 (A = Zr; B = Nb, Ta) thin films and ceramics. Thin films are produced via sputter deposition from dense, phase-homogenous bulk ceramic targets, which are synthesized through a reactive sintering process at 1500 °C. Crystal structure, microstructure, chemistry and dielectric properties are characterized by X-ray diffraction and…
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We report on the structure and dielectric properties of ternary A6B2O17 (A = Zr; B = Nb, Ta) thin films and ceramics. Thin films are produced via sputter deposition from dense, phase-homogenous bulk ceramic targets, which are synthesized through a reactive sintering process at 1500 °C. Crystal structure, microstructure, chemistry and dielectric properties are characterized by X-ray diffraction and reflectivity, atomic force microscopy, X-ray photoelectron spectroscopy, and capacitance analysis respectively. We observe relative permittivities approaching 60 and loss tangents < 10^-2 across the 10^3-10^5 Hz frequency range in the Zr6Nb2O17 and Zr6Ta2O17 phases. These observations create an opportunity space for this novel class of disordered oxide electroceramics.
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Submitted 6 May, 2024;
originally announced May 2024.
