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Thermal Capacity Mapping of Cryogenic Platforms for Quantum Computers
Authors:
Scott A. Manifold,
George B. Long,
Jonathan J. Burnett
Abstract:
Large-scale cryogenic Input-Output (IO) infrastructure is a requirement for realising fault-tolerant quantum computing in solid-state modalities. Such IO scaling presents significant challenges in thermal modelling, hardware design and verification. Here we present a design tool for cryogenic platform development with applicability to quantum computing and other cryogenic technologies. By taking c…
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Large-scale cryogenic Input-Output (IO) infrastructure is a requirement for realising fault-tolerant quantum computing in solid-state modalities. Such IO scaling presents significant challenges in thermal modelling, hardware design and verification. Here we present a design tool for cryogenic platform development with applicability to quantum computing and other cryogenic technologies. By taking comprehensive measurements of a commercially available dilution refrigerator we construct a 'platform capacity map', quantifying the platform's complex response to heat loads distributed over multiple temperature stages and accounting for interstage dependencies, avoiding an analytical model. This allows for the modification of the platform parameters to be accurately estimated for the inclusion of an arbitrary IO infrastructure, the identification of stage thermal overheads and the optimisation of system parameters. We identify a key bottleneck around the Still stage, owing to loading from connected stages, and observe discrepancies between existing thermal modelling methods for estimating heat loads associated with IO and experimental results obtained from the platform capacity map.
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Submitted 13 March, 2025;
originally announced March 2025.
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Superconducting boron doped nanocrystalline diamond microwave coplanar resonator
Authors:
Jerome A. Cuenca,
Thomas Brien,
Soumen Mandal,
Scott Manifold,
Simon Doyle,
Adrian Porch,
Georgina M. Klemencic,
Oliver A. Williams
Abstract:
A superconducting boron doped nanocrystalline diamond (B-NCD) coplanar waveguide resonator (CPR) is presented for kinetic inductance ($L_k$) and penetration depth ($λ_{\rm{L}}$) measurements at microwave frequencies of 0.4 to 1.2 GHz and at temperatures below 3 K. Using a simplified effective medium CPR approach, this work demonstrates that thin granular B-NCD films ($t\approx $ 500 nm) on Si have…
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A superconducting boron doped nanocrystalline diamond (B-NCD) coplanar waveguide resonator (CPR) is presented for kinetic inductance ($L_k$) and penetration depth ($λ_{\rm{L}}$) measurements at microwave frequencies of 0.4 to 1.2 GHz and at temperatures below 3 K. Using a simplified effective medium CPR approach, this work demonstrates that thin granular B-NCD films ($t\approx $ 500 nm) on Si have a large penetration depth ($λ_{\rm{L}}\approx 4.3$ to 4.4 $μ$m), and therefore an associated high kinetic inductance ($L_{k,\square} \approx $ 670 to 690 pH/$\square$). These values are much larger than those typically obtained for films on single crystal diamond which is likely due to the significant granularity of the nanocrystalline films. Based on the measured Q factors of the structure, the calculated surface resistance in this frequency range is found to be as low as $\approx$ 2 to 4 $μΩ$ at $T<2$ K, demonstrating the potential for granular B-NCD for high quality factor superconducting microwave resonators and highly sensitive kinetic inductance detectors.
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Submitted 27 February, 2022;
originally announced February 2022.
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Contact resistance of various metallisation schemes to superconducting boron doped diamond between 1.9 and 300 K
Authors:
Scott A. Manifold,
Georgina Klemencic,
Evan L. H. Thomas,
Soumen Mandal,
Henry Bland,
Sean R. Giblin,
Oliver A. Williams
Abstract:
Diamond is a material that offers potential in numerous device applications. In particular, highly boron doped diamond is attractive due to its superconductivity and high Young's Modulus. The fabrication of stable, low resistance, ohmic contacts is essential to ensure proper device function. Previous work has established the efficacy of several methods of forming suitable contacts to diamond at ro…
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Diamond is a material that offers potential in numerous device applications. In particular, highly boron doped diamond is attractive due to its superconductivity and high Young's Modulus. The fabrication of stable, low resistance, ohmic contacts is essential to ensure proper device function. Previous work has established the efficacy of several methods of forming suitable contacts to diamond at room temperature and above, including carbide forming and carbon soluble metallisation schemes. Herein, the stability of several contact schemes (Ti, Cr, Mo, Ta and Pd) to highly boron doped nanocrystalline diamond was verified down to the cryogenic temperatures with modified Transmission Line Model (TLM) measurements. While all contact schemes remained ohmic, a significant temperature dependency is noted at Tc and at the lowest temperatures the contact resistances ranged from Ti/Pt/Au with ${(8.83 \pm 0.10)\times 10^{-4} \:Ω.cm}$ to Ta/Pt/Au with ${(8.07 \pm 0.62) \times 10^{-6} \:Ω.cm}$.
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Submitted 6 May, 2021;
originally announced May 2021.
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Phase Slips and Metastability in Granular Boron-doped Nanocrystalline Diamond Microbridges
Authors:
G. M. Klemencic,
D. T. S. Perkins,
J. M. Fellows,
C. M. Muirhead,
R. A. Smith,
S. Mandal,
S. Manifold,
M. Salman,
S. R. Giblin,
O. A. Williams
Abstract:
A phase slip is a localized disturbance in the coherence of a superconductor allowing an abrupt 2$π$ phase shift. Phase slips are a ubiquitous feature of one-dimensional superconductors and also have an analogue in two-dimensions. Here we present electrical transport measurements on boron-doped nanocrystalline diamond (BNCD) microbridges where, despite their three-dimensional macroscopic geometry,…
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A phase slip is a localized disturbance in the coherence of a superconductor allowing an abrupt 2$π$ phase shift. Phase slips are a ubiquitous feature of one-dimensional superconductors and also have an analogue in two-dimensions. Here we present electrical transport measurements on boron-doped nanocrystalline diamond (BNCD) microbridges where, despite their three-dimensional macroscopic geometry, we find clear evidence of phase slippage in both the resistance-temperature and voltage-current characteristics. We attribute this behavior to the unusual microstructure of BNCD. We argue that the columnar crystal structure of BNCD forms an intrinsic Josephson junction array that supports a line of phase slippage across the microbridge. The voltage-state in these bridges is metastable and we demonstrate the ability to switch deterministically between different superconducting states by applying electromagnetic noise pulses. This metastability is remarkably similar to that observed in $δ$-MoN nanowires, but with a vastly greater response voltage.
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Submitted 5 January, 2021;
originally announced January 2021.
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Quantitative analysis of the interaction between a dc SQUID and an integrated micromechanical doubly clamped cantilever
Authors:
Majdi Salman,
Georgina M Klemencic,
Soumen Mandal,
Scott Manifold,
Luqman Mustafa,
Oliver A Williams,
Sean R Giblin
Abstract:
Based on the superconducting quantum interference device (SQUID) equations described by the resistively- and capacitively-shunted junction model coupled to the equation of motion of a damped harmonic oscillator, we provide simulations to quantitatively describe the interaction between a dc SQUID and an integrated doubly clamped cantilever. We have chosen to investigate an existing experimental con…
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Based on the superconducting quantum interference device (SQUID) equations described by the resistively- and capacitively-shunted junction model coupled to the equation of motion of a damped harmonic oscillator, we provide simulations to quantitatively describe the interaction between a dc SQUID and an integrated doubly clamped cantilever. We have chosen to investigate an existing experimental configuration and have explored the motion of the cantilever and the reaction of the SQUID as a function of the voltage-flux $V(Φ)$ characteristics. We clearly observe the Lorentz force back-action interaction and demonstrate how a sharp transition state drives the system into a nonlinear-like regime, and modulates the cantilever displacement amplitude, simply by tuning the SQUID parameters.
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Submitted 8 February, 2019;
originally announced February 2019.
