Showing 1–3 of 3 results for author: Makarovskii, O N

Coulomb pseudogap in elastic 2D-2D electron tunneling in a quantizing magnetic field

Authors: V. G. Popov, O. N. Makarovskii, V. Renard, L. Eaves, J. -C. Portal

Abstract: The electron tunneling is experimentally studied between two-dimensional electron gases (2DEGs) formed in a single-doped-barrier heterostructure in the magnetic fields directed perpendicular to the 2DEGs planes. It is well known that the quantizing magnetic field induces the Coulomb pseudogap suppressing the electron tunneling at Fermi level. In this paper we firstly present the experimental res… ▽ More The electron tunneling is experimentally studied between two-dimensional electron gases (2DEGs) formed in a single-doped-barrier heterostructure in the magnetic fields directed perpendicular to the 2DEGs planes. It is well known that the quantizing magnetic field induces the Coulomb pseudogap suppressing the electron tunneling at Fermi level. In this paper we firstly present the experimental results revealing the pseudogap in the electron tunneling assisted by elastic electron scattering on disorder. △ Less

Submitted 22 August, 2008; originally announced August 2008.

Comments: 5 pages, 2 figures, Proc. of the ICPS-2008

Development of the tunnelling gap in disordered 2D electron system with magnetic field: observation of the soft-hard gap transition

Authors: Yu. V. Dubrovskii, V. A. Volkov, L. Eaves, E. E. Vdovin, O. N. Makarovskii, J. -C. Portal, M. Henini, G. Hill

Abstract: Magnetic field suppression of the tunneling between disordered 2D electron systems in GaAs around zero bias voltage has been studied. Magnetic field B normal to the layers induces a dip in the tunneling density of states (TDOS) centered precisely at the Fermi level, i.e. soft tunneling gap. The soft gap has a linear form with finite TDOS diminishing with B at the Fermi level. Driven by magnetic… ▽ More Magnetic field suppression of the tunneling between disordered 2D electron systems in GaAs around zero bias voltage has been studied. Magnetic field B normal to the layers induces a dip in the tunneling density of states (TDOS) centered precisely at the Fermi level, i.e. soft tunneling gap. The soft gap has a linear form with finite TDOS diminishing with B at the Fermi level. Driven by magnetic field the transition soft-hard gap has been observed, i.e. the TDOS vanishes in the finite energy window around Fermi level at B>13 T. △ Less

Submitted 6 January, 2005; v1 submitted 5 January, 2005; originally announced January 2005.

Comments: Revtex4, 6 pages, 5 Postscript figures, to be submitted to Physical Review B

Magnetoresistance and electronic structure of asymmetric GaAs/AlGaAs double quantum wells in the in-plane/tilted magnetic field

Authors: O. N. Makarovskii, L. Smrcka, P. Vasek, T. Jungwirth, M. Cukr, L. Jansen

Abstract: Bilayer two-dimensional electron systems formed by a thin barrier in the GaAs buffer of a standard heterostructure were investigated by magnetotransport measurements. In magnetic fields oriented parallel to the electron layers, the magnetoresistance exhibits an oscillation associated with the depopulation of the higher occupied subband and the field-induced transition into a decoupled bilayer. S… ▽ More Bilayer two-dimensional electron systems formed by a thin barrier in the GaAs buffer of a standard heterostructure were investigated by magnetotransport measurements. In magnetic fields oriented parallel to the electron layers, the magnetoresistance exhibits an oscillation associated with the depopulation of the higher occupied subband and the field-induced transition into a decoupled bilayer. Shubnikov-de Haas oscillations in slightly tilted magnetic fields allow to reconstruct the evolution of the electron concentration in the individual subbands as a function of the in-plane magnetic field. The characteristics of the system derived experimentally are in quantitative agreement with numerical self-consistent-field calculations of the electronic structure. △ Less

Submitted 18 April, 2000; originally announced April 2000.

Comments: 6 pages, 5 figures