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pyMEAL: A Multi-Encoder Augmentation-Aware Learning for Robust and Generalizable Medical Image Translation
Authors:
Abdul-mojeed Olabisi Ilyas,
Adeleke Maradesa,
Jamal Banzi,
Jianpan Huang,
Henry K. F. Mak,
Kannie W. Y. Chan
Abstract:
Medical imaging is critical for diagnostics, but clinical adoption of advanced AI-driven imaging faces challenges due to patient variability, image artifacts, and limited model generalization. While deep learning has transformed image analysis, 3D medical imaging still suffers from data scarcity and inconsistencies due to acquisition protocols, scanner differences, and patient motion. Traditional…
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Medical imaging is critical for diagnostics, but clinical adoption of advanced AI-driven imaging faces challenges due to patient variability, image artifacts, and limited model generalization. While deep learning has transformed image analysis, 3D medical imaging still suffers from data scarcity and inconsistencies due to acquisition protocols, scanner differences, and patient motion. Traditional augmentation uses a single pipeline for all transformations, disregarding the unique traits of each augmentation and struggling with large data volumes.
To address these challenges, we propose a Multi-encoder Augmentation-Aware Learning (MEAL) framework that leverages four distinct augmentation variants processed through dedicated encoders. Three fusion strategies such as concatenation (CC), fusion layer (FL), and adaptive controller block (BD) are integrated to build multi-encoder models that combine augmentation-specific features before decoding. MEAL-BD uniquely preserves augmentation-aware representations, enabling robust, protocol-invariant feature learning.
As demonstrated in a Computed Tomography (CT)-to-T1-weighted Magnetic Resonance Imaging (MRI) translation study, MEAL-BD consistently achieved the best performance on both unseen- and predefined-test data. On both geometric transformations (like rotations and flips) and non-augmented inputs, MEAL-BD outperformed other competing methods, achieving higher mean peak signal-to-noise ratio (PSNR) and structural similarity index measure (SSIM) scores. These results establish MEAL as a reliable framework for preserving structural fidelity and generalizing across clinically relevant variability. By reframing augmentation as a source of diverse, generalizable features, MEAL supports robust, protocol-invariant learning, advancing clinically reliable medical imaging solutions.
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Submitted 30 May, 2025;
originally announced May 2025.
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Bright hybrid excitons in molecularly tunable bilayer crystals
Authors:
Tomojit Chowdhury,
Aurélie Champagne,
Patrick Knüppel,
Zehra Naqvi,
Ariana Ray,
Mengyu Gao,
David A. Muller,
Nathan Guisinger,
Kin Fai Mak,
Jeffrey B. Neaton,
Jiwoong Park
Abstract:
Bilayer crystals, built by stacking crystalline monolayers, generate interlayer potentials that govern excitonic phenomena but are constrained by fixed covalent lattices and orientations. Replacing one layer with an atomically thin molecular crystal overcomes this limitation, as diverse functional groups enable tunable molecular lattices and interlayer potentials, tailoring a wide range of exciton…
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Bilayer crystals, built by stacking crystalline monolayers, generate interlayer potentials that govern excitonic phenomena but are constrained by fixed covalent lattices and orientations. Replacing one layer with an atomically thin molecular crystal overcomes this limitation, as diverse functional groups enable tunable molecular lattices and interlayer potentials, tailoring a wide range of excitonic properties. Here, we report hybrid excitons in four-atom-thick hybrid bilayer crystals (HBCs), directly synthesized with single-crystalline perylene diimide (PDI) molecular crystal atop WS2 monolayers. These excitons arise from a hybridized bilayer band structure, revealed by lattice-scale first-principles calculations, inheriting properties from both monolayers. They exhibit bright photoluminescence with near-unity polarization above and below the WS2 bandgap, along with spectral signatures of exciton delocalization, supported by theory, while their energies and intensities are tuned by modifying the HBC composition by synthesis. Our work introduces a molecule-based 2D quantum materials platform for bottom-up design and control of optoelectronic properties.
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Submitted 19 February, 2025;
originally announced February 2025.
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Quantum oscillations in a dipolar excitonic insulator
Authors:
Phuong X. Nguyen,
Raghav Chaturvedi,
Bo Zou,
Kenji Watanabe,
Takashi Taniguchi,
Allan H. MacDonald,
Kin Fai Mak,
Jie Shan
Abstract:
Quantum oscillations in magnetization or resistivity are a defining feature of metals subject to an external magnetic field. The phenomenon is generally not expected in insulators without a Fermi surface. The observations of quantum oscillations in Kondo insulating materials have provided a rare counterexample and attracted much theoretical interest. However, the magnetic oscillations in correlate…
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Quantum oscillations in magnetization or resistivity are a defining feature of metals subject to an external magnetic field. The phenomenon is generally not expected in insulators without a Fermi surface. The observations of quantum oscillations in Kondo insulating materials have provided a rare counterexample and attracted much theoretical interest. However, the magnetic oscillations in correlated insulators remain poorly understood. Here we report the observations of resistivity quantum oscillations in an excitonic insulator realized in Coulomb-coupled electron-hole double layers with gate-tunability that allows the phenomenon to be explored in a more controllable fashion than in bulk materials. When the cyclotron energy of the electrons or holes is tuned to be comparable to or larger than the exciton binding energy, recurring transitions between excitonic insulators and electron-hole decoupled quantum Hall states are observed. Compressibility measurements show an oscillatory exciton binding energy as a function of magnetic field and electron-hole pair density. Coulomb drag measurements further reveal the formation of excitons with finite angular momentum. Our results are qualitatively captured by mean-field theory calculations. The study demonstrates a new platform for studying quantum oscillations in correlated insulators.
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Submitted 29 January, 2025;
originally announced January 2025.
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Time-reversal symmetry breaking fractional quantum spin Hall insulator in moiré MoTe2
Authors:
Kaifei Kang,
Yichen Qiu,
Bowen Shen,
Kihong Lee,
Zhengchao Xia,
Yihang Zeng,
Kenji Watanabe,
Takashi Taniguchi,
Jie Shan,
Kin Fai Mak
Abstract:
Twisted bilayer transition metal dichalcogenide semiconductors, which support flat Chern bands with enhanced interaction effects, realize a platform for fractional Chern insulators and fractional quantum spin Hall (FQSH) insulators. A recent experiment has reported the emergence of a FQSH insulator protected by spin-Sz conservation at a moiré lattice filling factor ν=3 in 2.1-degree twisted bilaye…
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Twisted bilayer transition metal dichalcogenide semiconductors, which support flat Chern bands with enhanced interaction effects, realize a platform for fractional Chern insulators and fractional quantum spin Hall (FQSH) insulators. A recent experiment has reported the emergence of a FQSH insulator protected by spin-Sz conservation at a moiré lattice filling factor ν=3 in 2.1-degree twisted bilayer MoTe2. Theoretical studies have proposed both time-reversal symmetric and asymmetric ground states as possible candidates for the observed FQSH insulator, but the nature of the state remains unexplored. Here we report the observation of spontaneous time-reversal symmetry breaking at generic fillings in 2.1-degree twisted bilayer MoTe2 from ν<1 all the way to ν>6 except at ν=2, 4, and 6. Although zero Hall response is observed at ν=3 for magnetic fields higher than 20 mT, a finite anomalous Hall response accompanied by a magnetic hysteresis is observed at lower magnetic fields, demonstrating spontaneous time-reversal symmetry breaking. Our work shows the tendency towards ferromagnetism by doping the first three pairs of conjugate Chern bands in the material; it also sheds light on the nature of the FQSH insulator at ν=3.
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Submitted 12 January, 2025; v1 submitted 5 January, 2025;
originally announced January 2025.
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Molecular tuning of excitons in four-atom-thick hybrid bilayer crystals
Authors:
Tomojit Chowdhury,
Aurélie Champagne,
Patrick Knüppel,
Zehra Naqvi,
Mengyu Gao,
Nathan Guisinger,
Kin Fai Mak,
Jeffrey B. Neaton,
Jiwoong Park
Abstract:
Bilayer crystals, formed by stacking monolayers of two-dimensional (2D) crystals, create interlayer potentials that govern excitonic phenomena but are constrained by their fixed covalent lattices. Replacing one layer with an atomically thin molecular crystal overcomes this limitation, as precise control of functional groups enables tunable 2D molecular lattices and, consequently, electronic struct…
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Bilayer crystals, formed by stacking monolayers of two-dimensional (2D) crystals, create interlayer potentials that govern excitonic phenomena but are constrained by their fixed covalent lattices. Replacing one layer with an atomically thin molecular crystal overcomes this limitation, as precise control of functional groups enables tunable 2D molecular lattices and, consequently, electronic structures. Here, we report molecular tuning of lattices and excitons in four-atom-thick hybrid bilayer crystals (HBCs), synthesized as monolayers of perylene-based molecular and transition metal dichalcogenide (TMD) single crystals. In HBCs, we observe an anisotropic photoluminescence signal exhibiting characteristics of both molecular and TMD excitons, directly tuned by molecular geometry and HBC composition. Ab initio calculations reveal that this anisotropic emission arises from hybrid excitons, which inherit properties from both layers through a hybridized bilayer band structure. Our work establishes a synthetically derived, molecule-based 2D quantum materials platform with the potential for engineering interlayer potentials.
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Submitted 8 February, 2025; v1 submitted 16 December, 2024;
originally announced December 2024.
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Relativistic Mott transition in strongly correlated artificial graphene
Authors:
Liguo Ma,
Raghav Chaturvedi,
Phuong X. Nguyen,
Kenji Watanabe,
Takashi Taniguchi,
Kin Fai Mak,
Jie Shan
Abstract:
The realization of graphene has provided a bench-top laboratory for quantum electrodynamics. The low-energy excitations of graphene are two-dimensional massless Dirac fermions with opposite chiralities at the $\pm$K valleys of the graphene Brillouin zone. It has been speculated that the electron-electron interactions in graphene could spontaneously break the chiral symmetry to induce a finite mass…
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The realization of graphene has provided a bench-top laboratory for quantum electrodynamics. The low-energy excitations of graphene are two-dimensional massless Dirac fermions with opposite chiralities at the $\pm$K valleys of the graphene Brillouin zone. It has been speculated that the electron-electron interactions in graphene could spontaneously break the chiral symmetry to induce a finite mass for Dirac fermions, in analogue to dynamical mass generation in elementary particles. The phenomenon is also known as the relativistic Mott transition and has not been observed in pristine graphene because the interaction strength is insufficient. Here, we report the realization of strongly correlated artificial graphene and the observation of the relativistic Mott transition in twisted WSe2 tetralayers. Using magneto transport, we show that the first $Γ$-valley moiré valence band mimics the low-energy graphene band structure. At half-band filling, the system exhibits hallmarks of massless Dirac fermions, including an anomalous Landau fan originated from a $π$-Berry phase and a square-root density dependence of the cyclotron mass. We tune the interaction across the semimetal-insulator transition by reducing the twist angle below about 2.7 degrees. The emergent insulator is compatible with an antiferromagnetic Mott insulator. Our results open the possibility of studying strongly correlated Dirac fermions in a condensed matter system.
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Submitted 9 December, 2024;
originally announced December 2024.
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A New Moiré Platform Based on M-Point Twisting
Authors:
Dumitru Călugăru,
Yi Jiang,
Haoyu Hu,
Hanqi Pi,
Jiabin Yu,
Maia G. Vergniory,
Jie Shan,
Claudia Felser,
Leslie M. Schoop,
Dmitri K. Efetov,
Kin Fai Mak,
B. Andrei Bernevig
Abstract:
We introduce a new class of moiré systems and materials based on monolayers with triangular lattices and low-energy states at the M points of the Brillouin zone. These M-point moiré materials are fundamentally distinct from those derived from $Γ$- or K-point monolayers, featuring three time-reversal-preserving valleys related by three-fold rotational symmetry. We propose twisted bilayers of experi…
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We introduce a new class of moiré systems and materials based on monolayers with triangular lattices and low-energy states at the M points of the Brillouin zone. These M-point moiré materials are fundamentally distinct from those derived from $Γ$- or K-point monolayers, featuring three time-reversal-preserving valleys related by three-fold rotational symmetry. We propose twisted bilayers of experimentally exfoliable 1T-SnSe$_2$ and 1T-ZrS$_2$ as realizations of this new class. Using extensive ab initio simulations, we develop quantitative continuum models and analytically show that the corresponding M-point moiré Hamiltonians exhibit emergent momentum-space non-symmorphic symmetries and a kagome plane-wave lattice in momentum space. This represents the first experimentally viable realization of a projective representation of crystalline space groups in a non-magnetic system. With interactions, these materials represent six-flavor Hubbard simulators with Mott physics, as can be seen by their flat Wilson loops. Furthermore, the presence of a non-symmorphic momentum-space in-plane mirror symmetry makes some of the M-point moiré Hamiltonians quasi-one-dimensional in each valley, suggesting the possibility of realizing Luttinger liquid physics. We predict the twist angles at which a series of (conduction) flat bands appear, provide a faithful continuum Hamiltonian, analyze its topology and charge density and briefly discuss several aspects of the physics of this new platform.
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Submitted 27 November, 2024;
originally announced November 2024.
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2D Theoretically Twistable Material Database
Authors:
Yi Jiang,
Urko Petralanda,
Grigorii Skorupskii,
Qiaoling Xu,
Hanqi Pi,
Dumitru Călugăru,
Haoyu Hu,
Jiaze Xie,
Rose Albu Mustaf,
Peter Höhn,
Vicky Haase,
Maia G. Vergniory,
Martin Claassen,
Luis Elcoro,
Nicolas Regnault,
Jie Shan,
Kin Fai Mak,
Dmitri K. Efetov,
Emilia Morosan,
Dante M. Kennes,
Angel Rubio,
Lede Xian,
Claudia Felser,
Leslie M. Schoop,
B. Andrei Bernevig
Abstract:
The study of twisted two-dimensional (2D) materials, where twisting layers create moiré superlattices, has opened new opportunities for investigating topological phases and strongly correlated physics. While systems such as twisted bilayer graphene (TBG) and twisted transition metal dichalcogenides (TMDs) have been extensively studied, the broader potential of a seemingly infinite set of other twi…
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The study of twisted two-dimensional (2D) materials, where twisting layers create moiré superlattices, has opened new opportunities for investigating topological phases and strongly correlated physics. While systems such as twisted bilayer graphene (TBG) and twisted transition metal dichalcogenides (TMDs) have been extensively studied, the broader potential of a seemingly infinite set of other twistable 2D materials remains largely unexplored. In this paper, we define "theoretically twistable materials" as single- or multi-layer structures that allow for the construction of simple continuum models of their moiré structures. This excludes, for example, materials with a "spaghetti" of bands or those with numerous crossing points at the Fermi level, for which theoretical moiré modeling is unfeasible. We present a high-throughput algorithm that systematically searches for theoretically twistable semimetals and insulators based on the Topological 2D Materials Database. By analyzing key electronic properties, we identify thousands of new candidate materials that could host rich topological and strongly correlated phenomena when twisted. We propose representative twistable materials for realizing different types of moiré systems, including materials with different Bravais lattices, valleys, and strength of spin-orbital coupling. We provide examples of crystal growth for several of these materials and showcase twisted bilayer band structures along with simplified twisted continuum models. Our results significantly broaden the scope of moiré heterostructures and provide a valuable resource for future experimental and theoretical studies on novel moiré systems.
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Submitted 14 November, 2024;
originally announced November 2024.
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Interlayer Fermi polarons of excited exciton states in quantizing magnetic fields
Authors:
Huiying Cui,
Qianying Hu,
Xuan Zhao,
Liguo Ma,
Feng Jin,
Qingming Zhang,
Kenji Watanabe,
Takashi Taniguchi,
Jie Shan,
Kin Fai Mak,
Yongqing Li,
Yang Xu
Abstract:
The study of exciton-polarons has offered profound insights into the many-body interactions between bosonic excitations and their immersed Fermi sea within layered heterostructures. However, little is known about the properties of exciton polarons with interlayer interactions. Here through magneto-optical reflectance contrast measurements, we experimentally investigate interlayer Fermi polarons fo…
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The study of exciton-polarons has offered profound insights into the many-body interactions between bosonic excitations and their immersed Fermi sea within layered heterostructures. However, little is known about the properties of exciton polarons with interlayer interactions. Here through magneto-optical reflectance contrast measurements, we experimentally investigate interlayer Fermi polarons for 2s excitons in WSe$_2$/graphene heterostructures, where the excited exciton states (2s) in the WSe$_2$ layer are dressed by free charge carriers of the adjacent graphene layer in the Landau quantization regime. First, such a system enables an optical detection of integer and fractional quantum Hall states (e.g. $ν=\pm1/3$, $\pm$2/3) of monolayer graphene. Furthermore, we observe that the 2s state evolves into two distinct branches, denoted as attractive and repulsive polarons, when graphene is doped out of the incompressible quantum Hall gaps. Our work paves the way for the understanding of the excited composite quasiparticles and Bose-Fermi mixtures.
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Submitted 15 June, 2024;
originally announced June 2024.
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Correlated states controlled by tunable van Hove singularity in moiré WSe2
Authors:
Patrick Knüppel,
Jiacheng Zhu,
Yiyu Xia,
Zhengchao Xia,
Zhongdong Han,
Yihang Zeng,
Kenji Watanabe,
Takashi Taniguchi,
Jie Shan,
Kin Fai Mak
Abstract:
Twisted bilayers of transition metal dichalcogenide semiconductors have enabled the discovery of superconductivity, ferromagnetism, correlated insulators and a series of new topological phases of matter. However, the connection between these electronic phases and the underlying band structure singularities in these materials has remained largely unexplored. Here, combining the magnetic circular di…
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Twisted bilayers of transition metal dichalcogenide semiconductors have enabled the discovery of superconductivity, ferromagnetism, correlated insulators and a series of new topological phases of matter. However, the connection between these electronic phases and the underlying band structure singularities in these materials has remained largely unexplored. Here, combining the magnetic circular dichroism and electronic compressibility measurements, we investigate the influence of a van Hove singularity on the correlated phases in bilayer WSe2 with twist angle between 2-3 degrees. We demonstrate stabilizing the Stoner ferromagnetism below moiré lattice filling one and Chern insulators at filling one by tuning the van Hove singularity cross the Fermi level using the electric and magnetic fields. The experimental observations are supported by the continuum model band structure calculations. Our results highlight the prospect of engineering the electronic phases by tunable van Hove singularities.
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Submitted 26 July, 2024; v1 submitted 5 June, 2024;
originally announced June 2024.
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Unconventional superconductivity in twisted bilayer WSe2
Authors:
Yiyu Xia,
Zhongdong Han,
Kenji Watanabe,
Takashi Taniguchi,
Jie Shan,
Kin Fai Mak
Abstract:
Moiré materials have enabled the realization of flat electron bands and quantum phases that are driven by strong correlations associated with flat bands. Superconductivity has been observed, but solely, in graphene moiré materials. The absence of robust superconductivity in moiré materials beyond graphene, such as semiconductor moiré materials, has remained a mystery and challenged our current und…
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Moiré materials have enabled the realization of flat electron bands and quantum phases that are driven by strong correlations associated with flat bands. Superconductivity has been observed, but solely, in graphene moiré materials. The absence of robust superconductivity in moiré materials beyond graphene, such as semiconductor moiré materials, has remained a mystery and challenged our current understanding of superconductivity in flat bands. Here, we report the observation of robust superconductivity in 3.65-degree twisted bilayer WSe2 which hosts a honeycomb moiré lattice. Superconductivity emerges at half-band filling and under small sublattice potential differences, where the moiré band is a flat Chern band. The optimal superconducting transition temperature is about 220 mK and constitutes 2% of the effective Fermi temperature; the latter is comparable to the value in high-temperature cuprate superconductors and suggests strong pairing. The superconductor borders on two distinct metals below and above half-band filling; it undergoes a continuous transition to a correlated insulator by tuning the sublattice potential difference. The observed superconductivity on the verge of Coulomb-induced charge localization suggests roots in strong electron correlations.
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Submitted 23 May, 2024;
originally announced May 2024.
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Tuning exciton emission via ferroelectric polarization at a heterogeneous interface between a monolayer transition metal dichalcogenide and a perovskite oxide membrane
Authors:
Jaehong Choi,
Kevin J. Crust,
Lizhong Li,
Kihong Lee,
Jialun Luo,
Jae-Pil So,
Kenji Watanabe,
Takashi Taniguchi,
Harold Y. Hwang,
Kin Fai Mak,
Jie Shan,
Gregory D. Fuchs
Abstract:
We demonstrate the integration of a thin BaTiO$_3$ (BTO) membrane with monolayer MoSe$_2$ in a dual gate device that enables in-situ manipulation of the BTO ferroelectric polarization with a voltage pulse. While two-dimensional (2D) transition metal dichalcogenides (TMDs) offer remarkable adaptability, their hybrid integration with other families of functional materials beyond the realm of 2D mate…
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We demonstrate the integration of a thin BaTiO$_3$ (BTO) membrane with monolayer MoSe$_2$ in a dual gate device that enables in-situ manipulation of the BTO ferroelectric polarization with a voltage pulse. While two-dimensional (2D) transition metal dichalcogenides (TMDs) offer remarkable adaptability, their hybrid integration with other families of functional materials beyond the realm of 2D materials has been challenging. Released functional oxide membranes offer a solution for 2D/3D integration via stacking. 2D TMD excitons can serve as a local probe of the ferroelectric polarization in BTO at a heterogeneous interface. Using photoluminescence (PL) of MoSe$_2$ excitons to optically readout the doping level, we find that the relative population of charge carriers in MoSe$_2$ depends sensitively on the ferroelectric polarization. This finding points to a promising avenue for future-generations versatile sensing devices with high sensitivity, fast read-out, and diverse applicability for advanced signal processing.
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Submitted 18 April, 2024;
originally announced April 2024.
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Observation of the double quantum spin Hall phase in moiré WSe2
Authors:
Kaifei Kang,
Yichen Qiu,
Kenji Watanabe,
Takashi Taniguchi,
Jie Shan,
Kin Fai Mak
Abstract:
Quantum spin Hall (QSH) insulators are a topologically protected phase of matter in two dimensions that can support non-dissipative spin transport. A hallmark of the phase is a pair of helical edge states surrounding an insulating bulk. A higher (even) number of helical edge state pairs is usually not possible in real materials because spin mixing would gap out the edge states. Multiple pairs of h…
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Quantum spin Hall (QSH) insulators are a topologically protected phase of matter in two dimensions that can support non-dissipative spin transport. A hallmark of the phase is a pair of helical edge states surrounding an insulating bulk. A higher (even) number of helical edge state pairs is usually not possible in real materials because spin mixing would gap out the edge states. Multiple pairs of helical edge states have been proposed in materials with spin conservation symmetry and high spin Chern bands, but remained experimentally elusive. Here, we demonstrate a QSH phase with one and two pairs of helical edge states in twisted bilayer WSe2 at moiré hole filling factor ν= 2 and 4, respectively. We observe nearly quantized conductance or resistance plateaus of h/(νe^2 ) at ν = 2 and 4 while the bulk is insulating. The conductance is nearly independent of out-of-plane magnetic field and decreases under an in-plane magnetic field. We also observe nonlocal transport, which is sensitive only to the in-plane magnetic field. The results agree with quantum transport of helical edge states protected by Ising spin conservation symmetry and open a promising platform for low-power spintronics.
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Submitted 6 February, 2024;
originally announced February 2024.
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Observation of the fractional quantum spin Hall effect in moiré MoTe2
Authors:
Kaifei Kang,
Bowen Shen,
Yichen Qiu,
Kenji Watanabe,
Takashi Taniguchi,
Jie Shan,
Kin Fai Mak
Abstract:
Quantum spin Hall (QSH) insulators are two-dimensional electronic materials that have a bulk band gap like an ordinary insulator but have topologically protected pairs of edge modes of opposite chiralities. To date, experimental studies have found only integer QSH insulators with counter-propagating up-spins and down-spins at each edge leading to a quantized conductance G0=e^2/h. Here we report tr…
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Quantum spin Hall (QSH) insulators are two-dimensional electronic materials that have a bulk band gap like an ordinary insulator but have topologically protected pairs of edge modes of opposite chiralities. To date, experimental studies have found only integer QSH insulators with counter-propagating up-spins and down-spins at each edge leading to a quantized conductance G0=e^2/h. Here we report transport evidence of a fractional QSH insulator in 2.1-degree-twisted bilayer MoTe2, which supports spin-Sz conservation and flat spin-contrasting Chern bands. At filling factor v = 3 of the moiré valence bands, each edge contributes a conductance 3/2 G0 with zero anomalous Hall conductivity. The state is likely a time-reversal pair of the even-denominator 3/2-fractional Chern insulators. Further, at v = 2, 4 and 6, we observe a single, double and triple QSH insulator with each edge contributing a conductance G0, 2G0 and 3G0, respectively. Our results open up the possibility of realizing time reversal symmetric non-abelian anyons and other unexpected topological phases in highly tunable moiré materials.
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Submitted 11 February, 2024; v1 submitted 5 February, 2024;
originally announced February 2024.
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A degenerate trion liquid in atomic double layers
Authors:
Phuong X. Nguyen,
Raghav Chaturvedi,
Liguo Ma,
Patrick Knuppel,
Kenji Watanabe,
Takashi Taniguchi,
Kin Fai Mak,
Jie Shan
Abstract:
Trions are a three-particle bound state of electrons and holes. Experimental realization of a trion liquid in the degenerate quantum limit would open a wide range of phenomena in quantum many-body physics. However, trions have been observed only as optically excited states in doped semiconductors to date. Here we report the emergence of a degenerate trion liquid in a Bose-Fermi mixture of holes an…
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Trions are a three-particle bound state of electrons and holes. Experimental realization of a trion liquid in the degenerate quantum limit would open a wide range of phenomena in quantum many-body physics. However, trions have been observed only as optically excited states in doped semiconductors to date. Here we report the emergence of a degenerate trion liquid in a Bose-Fermi mixture of holes and excitons in Coulomb-coupled MoSe2/WSe2 monolayers. By electrically tuning the hole density in WSe2 to be two times the electron density in MoSe2, we generate equilibrium interlayer trions with binding energy about 1 meV at temperatures two orders of magnitude below the Fermi temperature. We further demonstrate a density-tuned phase transition to an electron-hole plasma, spin-singlet correlations for the constituent holes and Zeeman-field-induced dissociation of trions. The results pave the way for exploration of the correlated phases of composite particles in solids.
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Submitted 19 December, 2023;
originally announced December 2023.
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Emergence of ferromagnetism at the onset of moiré Kondo breakdown
Authors:
Wenjin Zhao,
Bowen Shen,
Zui Tao,
Sunghoon Kim,
Patrick Knüppel,
Zhongdong Han,
Yichi Zhang,
Kenji Watanabe,
Takashi Taniguchi,
Debanjan Chowdhury,
Jie Shan,
Kin Fai Mak
Abstract:
The interaction of a lattice of localized magnetic moments with a sea of conduction electrons in Kondo lattice models induces rich quantum phases of matter, such as Fermi liquids with heavily renormalized electronic quasiparticles, quantum critical non-Fermi liquid metals and unconventional superconductors, among others. The recent demonstration of moiré Kondo lattices has opened the door to inves…
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The interaction of a lattice of localized magnetic moments with a sea of conduction electrons in Kondo lattice models induces rich quantum phases of matter, such as Fermi liquids with heavily renormalized electronic quasiparticles, quantum critical non-Fermi liquid metals and unconventional superconductors, among others. The recent demonstration of moiré Kondo lattices has opened the door to investigate the Kondo problem with continuously tunable parameters. Although a heavy Fermi liquid phase has been identified in moiré Kondo lattices, the magnetic phases and Kondo breakdown transitions remain unexplored. Here we report a density-tuned Kondo destruction in AB-stacked MoTe2/WSe2 moiré bilayers by combining magneto transport and optical studies. As the itinerant carrier density decreases, the Kondo temperature decreases. At a critical density, we observe a heavy Fermi liquid to insulator transition, and a nearly concomitant emergence of ferromagnetic order. The observation is consistent with the scenario of a ferromagnetic Anderson insulator and suppression of the Kondo screening effect. Our results pave the path for inducing other exotic quantum phase transitions in moiré Kondo lattices.
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Submitted 9 October, 2023;
originally announced October 2023.
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Perfect Coulomb drag in a dipolar excitonic insulator
Authors:
Phuong X. Nguyen,
Liguo Ma,
Raghav Chaturvedi,
Kenji Watanabe,
Takashi Taniguchi,
Jie Shan,
Kin Fai Mak
Abstract:
Excitonic insulators (EIs), arising in semiconductors when the electron-hole binding energy exceeds the band gap, are a solid-state prototype for bosonic phases of matter. Unlike the charged excitations that are frozen and unable to transport current, the neutral electron-hole pairs (excitons) are free to move in EIs. However, it is intrinsically difficult to demonstrate exciton transport in bulk…
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Excitonic insulators (EIs), arising in semiconductors when the electron-hole binding energy exceeds the band gap, are a solid-state prototype for bosonic phases of matter. Unlike the charged excitations that are frozen and unable to transport current, the neutral electron-hole pairs (excitons) are free to move in EIs. However, it is intrinsically difficult to demonstrate exciton transport in bulk EI candidates. The recently emerged dipolar EIs based on Coulomb-coupled atomic double layers open the possibility to realize exciton transport across the insulator because separate electrical contacts can be made to the electron and hole layers. Here we show that the strong interlayer excitonic correlation at equal electron and hole densities in the MoSe2/WSe2 double layers separated by a 2-nm barrier gives rise to perfect Coulomb drag. A charge current in one layer induces an equal but opposite drag current in the other. The drag current ratio remains above 0.9 up to about 20 K for low exciton densities. As exciton density increases above the Mott density, the excitons dissociate into the electron-hole plasma abruptly, and only weak Fermi liquid frictional drag is observed. Our experiment moves a step closer to realizing exciton circuitry and superfluidity.
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Submitted 26 September, 2023;
originally announced September 2023.
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Observation of spin polarons in a frustrated moiré Hubbard system
Authors:
Zui Tao,
Wenjin Zhao,
Bowen Shen,
Patrick Knüppel,
Kenji Watanabe,
Takashi Taniguchi,
Jie Shan,
Kin Fai Mak
Abstract:
The electron's kinetic energy plays a pivotal role in magnetism. While virtual electron hopping promotes antiferromagnetism in an insulator, the real process usually favors ferromagnetism. But in kinetically frustrated systems, such as hole doped triangular lattice Mott insulators, real hopping has been shown to favor antiferromagnetism. Kinetic frustration has also been predicted to induce a new…
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The electron's kinetic energy plays a pivotal role in magnetism. While virtual electron hopping promotes antiferromagnetism in an insulator, the real process usually favors ferromagnetism. But in kinetically frustrated systems, such as hole doped triangular lattice Mott insulators, real hopping has been shown to favor antiferromagnetism. Kinetic frustration has also been predicted to induce a new quasiparticle -- a bound state of the doped hole and a spin flip called a spin polaron -- at intermediate magnetic fields, which could form an unusual metallic state. However, the direct experimental observation of spin polarons has remained elusive. Here we report the observation of spin polarons in triangular lattice MoTe2/WSe2 moiré bilayers by the reflective magnetic circular dichroism measurements. We identify a spin polaron phase at lattice filling factor between 0.8-1 and magnetic field between 2-4 T; it is separated from the fully spin polarized phase by a metamagnetic transition. We determine that the spin polaron is a spin-3/2 particle and its binding energy is commensurate to the kinetic hopping energy. Our results open the door for exploring spin polaron pseudogap metals, spin polaron pairing and other new phenomena in triangular lattice moiré materials.
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Submitted 22 July, 2023;
originally announced July 2023.
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Integer and fractional Chern insulators in twisted bilayer MoTe2
Authors:
Yihang Zeng,
Zhengchao Xia,
Kaifei Kang,
Jiacheng Zhu,
Patrick Knüppel,
Chirag Vaswani,
Kenji Watanabe,
Takashi Taniguchi,
Kin Fai Mak,
Jie Shan
Abstract:
Chern insulators, which are the lattice analogs of the quantum Hall states, can potentially manifest high-temperature topological orders at zero magnetic field to enable next-generation topological quantum devices. To date, integer Chern insulators have been experimentally demonstrated in several systems at zero magnetic field, but fractional Chern insulators have been reported only in graphene-ba…
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Chern insulators, which are the lattice analogs of the quantum Hall states, can potentially manifest high-temperature topological orders at zero magnetic field to enable next-generation topological quantum devices. To date, integer Chern insulators have been experimentally demonstrated in several systems at zero magnetic field, but fractional Chern insulators have been reported only in graphene-based systems under a finite magnetic field. The emergence of semiconductor moiré materials, which support tunable topological flat bands, opens a new opportunity to realize fractional Chern insulators. Here, we report the observation of both integer and fractional Chern insulators at zero magnetic field in small-angle twisted bilayer MoTe2 by combining the local electronic compressibility and magneto-optical measurements. At hole filling factor ν=1 and 2/3, the system is incompressible and spontaneously breaks time reversal symmetry. We determine the Chern number to be 1 and 2/3 for the ν=1 and ν=2/3 gaps, respectively, from their dispersion in filling factor with applied magnetic field using the Streda formula. We further demonstrate electric-field-tuned topological phase transitions involving the Chern insulators. Our findings pave the way for demonstration of quantized fractional Hall conductance and anyonic excitation and braiding in semiconductor moiré materials.
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Submitted 22 July, 2023; v1 submitted 1 May, 2023;
originally announced May 2023.
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Optical readout of the chemical potential of two-dimensional electrons
Authors:
Zhengchao Xia,
Yihang Zeng,
Bowen Shen,
Roei Dery,
Kenji Watanabe,
Takashi Taniguchi,
Jie Shan,
Kin Fai Mak
Abstract:
The chemical potential u of an electron system is a fundamental property of a solid. A precise measurement of u plays a crucial role in understanding the electron interaction and quantum states of matter. However, thermodynamics measurements in micro and nanoscale samples are challenging because of the small sample volume and large background signals. Here, we report an optical readout technique f…
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The chemical potential u of an electron system is a fundamental property of a solid. A precise measurement of u plays a crucial role in understanding the electron interaction and quantum states of matter. However, thermodynamics measurements in micro and nanoscale samples are challenging because of the small sample volume and large background signals. Here, we report an optical readout technique for u of an arbitrary two-dimensional (2D) material. A monolayer semiconductor sensor is capacitively coupled to the sample. The sensor optical response determines a bias that fixes its chemical potential to the band edge and directly reads u of the sample. We demonstrate the technique in AB-stacked MoTe2/WSe2 moire bilayers. We obtain u with DC sensitivity about 20 ueV/sqrt(Hz), and the compressibility and interlayer electric polarization using AC readout. The results reveal a correlated insulating state at the doping density of one hole per moire unit cell, which evolves from a Mott to a charge-transfer insulator with increasing out-of-plane electric field. Furthermore, we image u and quantify the spatial inhomogeneity of the sample. Our work opens the door for high spatial and temporal resolution measurements of the thermodynamic properties of 2D quantum materials.
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Submitted 5 May, 2023; v1 submitted 19 April, 2023;
originally announced April 2023.
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Giant spin Hall effect in AB-stacked MoTe2/WSe2 bilayers
Authors:
Zui Tao,
Bowen Shen,
Wenjin Zhao,
Nai Chao Hu,
Tingxin Li,
Shengwei Jiang,
Lizhong Li,
Kenji Watanabe,
Takashi Taniguchi,
Allan H. MacDonald,
Jie Shan,
Kin Fai Mak
Abstract:
The spin Hall effect (SHE), in which electrical current generates transverse spin current, plays an important role in spintronics for the generation and manipulation of spin-polarized electrons. The phenomenon originates from spin-orbit coupling. In general, stronger spin-orbit coupling favors larger SHEs but shorter spin relaxation times and diffusion lengths. To achieve both large SHEs and long-…
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The spin Hall effect (SHE), in which electrical current generates transverse spin current, plays an important role in spintronics for the generation and manipulation of spin-polarized electrons. The phenomenon originates from spin-orbit coupling. In general, stronger spin-orbit coupling favors larger SHEs but shorter spin relaxation times and diffusion lengths. To achieve both large SHEs and long-range spin transport in a single material has remained a challenge. Here we demonstrate a giant intrinsic SHE in AB-stacked MoTe2/WSe2 moiré bilayers by direct magneto optical imaging. Under moderate electrical currents with density < 1 A/m, we observe spin accumulation on transverse sample edges that nearly saturates the spin density. We also demonstrate long-range spin Hall transport and efficient non-local spin accumulation limited only by the device size (about 10 um). The gate dependence shows that the giant SHE occurs only near the Chern insulating state, and at low temperatures, it emerges after the quantum anomalous Hall breakdown. Our results demonstrate moiré engineering of Berry curvature and large SHEs for potential spintronics applications.
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Submitted 22 March, 2023;
originally announced March 2023.
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Quantum Transport in Graphene Using Surface Acoustic Wave Resonators
Authors:
Yawen Fang,
Yang Xu,
Kaifei Kang,
Benyamin Davaji,
Kenji Watanabe,
Takashi Taniguchi,
Amit Lal,
Kin Fai Mak,
Jie Shan,
B. J. Ramshaw
Abstract:
Surface acoustic waves (SAWs) provide a contactless method for measuring the wavevector-dependent conductivity. This technique has been used to discover emergent length scales in the fractional quantum Hall regime of traditional, semiconductor-based heterostructures. SAWs would appear to be an ideal match for van der Waals (vdW) heterostructures, but the right combination of substrate and experime…
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Surface acoustic waves (SAWs) provide a contactless method for measuring the wavevector-dependent conductivity. This technique has been used to discover emergent length scales in the fractional quantum Hall regime of traditional, semiconductor-based heterostructures. SAWs would appear to be an ideal match for van der Waals (vdW) heterostructures, but the right combination of substrate and experimental geometry to allow access to the quantum transport regime has not yet been found. We demonstrate that SAW resonant cavities fabricated on LiNbO$_3$ substrates can be used to access the quantum Hall regime of high-mobility, hexagonal boron nitride (hBN) encapsulated graphene heterostructures. Our work establishes SAW resonant cavities as a viable platform for performing contactless conductivity measurements in the quantum transport regime of vdW materials.
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Submitted 2 February, 2023;
originally announced February 2023.
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Gate-tunable heavy fermions in a moiré Kondo lattice
Authors:
Wenjin Zhao,
Bowen Shen,
Zui Tao,
Zhongdong Han,
Kaifei Kang,
Kenji Watanabe,
Takashi Taniguchi,
Kin Fai Mak,
Jie Shan
Abstract:
The Kondo lattice, describing a matrix of local magnetic moments coupled via spin-exchange interactions to itinerant conduction electrons, is a prototype of strongly correlated quantum matter. Traditionally, Kondo lattices are realized in intermetallic compounds containing lanthanide or actinide. The complex electronic structure and limited tunability of both the electron density and exchange inte…
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The Kondo lattice, describing a matrix of local magnetic moments coupled via spin-exchange interactions to itinerant conduction electrons, is a prototype of strongly correlated quantum matter. Traditionally, Kondo lattices are realized in intermetallic compounds containing lanthanide or actinide. The complex electronic structure and limited tunability of both the electron density and exchange interactions in these bulk materials pose significant challenges to study Kondo lattice physics. Here, we report the realization of a synthetic Kondo lattice in AB-stacked MoTe2/WSe2 moiré bilayers, where the MoTe2 layer is tuned to a Mott insulating state, supporting a triangular moiré lattice of local moments, and the WSe2 layer is doped with itinerant conduction carriers. We observe heavy fermions with a large Fermi surface below the Kondo temperature. We also observe destruction of the heavy fermions by an external magnetic field with an abrupt decrease of the Fermi surface size and quasiparticle mass. We further demonstrate widely and continuously gate-tunable Kondo temperatures through either the itinerant carrier density or Kondo interaction. Our study opens the possibility of in-situ access to the rich phase diagram of the Kondo lattice with exotic quantum criticalities in a single device based on semiconductor moiré materials
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Submitted 1 November, 2022;
originally announced November 2022.
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Switchable moiré potentials in ferroelectric WTe2/WSe2 superlattices
Authors:
Kaifei Kang,
Wenjin Zhao,
Yihang Zeng,
Kenji Watanabe,
Takashi Taniguchi,
Jie Shan,
Kin Fai Mak
Abstract:
Moiré materials, with superlattice periodicity many times the atomic length scale, have enabled the studies of strong electronic correlations and band topology with unprecedented tunability. However, nonvolatile control of the moiré potentials, which could allow on-demand switching of the superlattice effects, has not been achieved to date. Here we demonstrate the switching of the correlated and m…
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Moiré materials, with superlattice periodicity many times the atomic length scale, have enabled the studies of strong electronic correlations and band topology with unprecedented tunability. However, nonvolatile control of the moiré potentials, which could allow on-demand switching of the superlattice effects, has not been achieved to date. Here we demonstrate the switching of the correlated and moiré band insulating states and the associated nonlinear anomalous Hall effect by the ferroelectric effect. This is achieved in a ferroelectric WTe2 bilayer of the Td structure with a centered-rectangular moiré superlattice induced by interfacing with a WSe2 monolayer of the H structure. The results can be understood in terms of polarization-dependent charge transfer between two WTe2 monolayers, which possess very different moiré potential depths; ferroelectric switching thus turns on/off the superlattice. Our study demonstrates the potential of creating new functional moiré materials by incorporating intrinsic symmetry-breaking orders.
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Submitted 13 September, 2022; v1 submitted 11 September, 2022;
originally announced September 2022.
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Valley-coherent quantum anomalous Hall state in AB-stacked MoTe2/WSe2 bilayers
Authors:
Zui Tao,
Bowen Shen,
Shengwei Jiang,
Tingxin Li,
Lizhong Li,
Liguo Ma,
Wenjin Zhao,
Jenny Hu,
Kateryna Pistunova,
Kenji Watanabe,
Takashi Taniguchi,
Tony F. Heinz,
Kin Fai Mak,
Jie Shan
Abstract:
Moiré materials provide fertile ground for the correlated and topological quantum phenomena. Among them, the quantum anomalous Hall (QAH) effect, in which the Hall resistance is quantized even under zero magnetic field, is a direct manifestation of the intrinsic topological properties of a material and an appealing attribute for low-power electronics applications. The QAH effect has been observed…
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Moiré materials provide fertile ground for the correlated and topological quantum phenomena. Among them, the quantum anomalous Hall (QAH) effect, in which the Hall resistance is quantized even under zero magnetic field, is a direct manifestation of the intrinsic topological properties of a material and an appealing attribute for low-power electronics applications. The QAH effect has been observed in both graphene and transition metal dichalcogenide (TMD) moiré materials. It is thought to arise from the interaction-driven valley polarization of the narrow moiré bands. Here, we show surprisingly that the newly discovered QAH state in AB-stacked MoTe2/WSe2 moiré bilayers is not valley-polarized but valley-coherent. The layer- and helicity-resolved optical spectroscopy measurement reveals that the QAH ground state possesses spontaneous spin (valley) polarization aligned (anti-aligned) in two TMD layers. In addition, saturation of the out-of-plane spin polarization in both layers occurs only under high magnetic fields, supporting a canted spin texture. Our results call for a new mechanism for the QAH effect and highlight the potential of TMD moiré materials with strong electronic correlations and spin-orbit interactions for exotic topological states.
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Submitted 15 August, 2022;
originally announced August 2022.
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Realization of the Haldane Chern insulator in a moiré lattice
Authors:
Wenjin Zhao,
Kaifei Kang,
Lizhong Li,
Charles Tschirhart,
Evgeny Redekop,
Kenji Watanabe,
Takashi Taniguchi,
Andrea Young,
Jie Shan,
Kin Fai Mak
Abstract:
The Chern insulator displays a quantized Hall effect without Landau levels. In a landmark paper in 1988, Haldane showed that a Chern insulator could be realized through complex next-nearest-neighbor hopping in a honeycomb lattice. Despite its profound impact on the field of topological physics and recent implementation in cold-atom experiments, the Haldane model has remained elusive in solid-state…
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The Chern insulator displays a quantized Hall effect without Landau levels. In a landmark paper in 1988, Haldane showed that a Chern insulator could be realized through complex next-nearest-neighbor hopping in a honeycomb lattice. Despite its profound impact on the field of topological physics and recent implementation in cold-atom experiments, the Haldane model has remained elusive in solid-state materials. Here, we report the experimental realization of a Haldane Chern insulator in AB-stacked MoTe2/WSe2 moiré bilayers, which form a honeycomb moiré lattice with two sublattices residing in different layers. We show that the moiré bilayer filled with two charge particles per unit cell is a quantum spin Hall (QSH) insulator with a tunable charge gap. Under a small out-of-plane magnetic field, it becomes a Chern insulator with Chern number c=1 from magneto-transport studies. The results are qualitatively captured by a generalized Kane-Mele tight-binding Hamiltonian. The Zeeman field splits the QSH insulator into two halves of opposite valley--one with a positive and the other a negative moiré band gap. Our study highlights the unique potential of semiconductor moiré materials in engineering topological lattice Hamiltonians.
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Submitted 5 July, 2022;
originally announced July 2022.
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Exciton density waves in Coulomb-coupled dual moiré lattices
Authors:
Yihang Zeng,
Zhengchao Xia,
Roei Dery,
Kenji Watanabe,
Takashi Taniguchi,
Jie Shan,
Kin Fai Mak
Abstract:
Strongly correlated bosons in a lattice are a platform to realize rich bosonic states of matter and quantum phase transitions. While strongly correlated bosons in a lattice have been studied in cold-atom experiments, their realization in a solid-state system has remained challenging. Here we trap interlayer excitons--bosons composed of bound electron-hole pairs--in a lattice provided by an angle-a…
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Strongly correlated bosons in a lattice are a platform to realize rich bosonic states of matter and quantum phase transitions. While strongly correlated bosons in a lattice have been studied in cold-atom experiments, their realization in a solid-state system has remained challenging. Here we trap interlayer excitons--bosons composed of bound electron-hole pairs--in a lattice provided by an angle-aligned WS2/bilayer WSe2/WS2 multilayer; the heterostructure supports Coulomb-coupled triangular moiré lattices of nearly identical period at the top and bottom interfaces. We observe correlated insulating states when the combined electron filling factor of the two lattices, with arbitrary partitions, equals to 1/3,2/3,4/3 and 5/3. These new states can be interpreted as exciton density waves in a Bose-Fermi mixture of excitons and holes. Because of the strong repulsive interactions between the constituents, the holes form robust generalized Wigner crystals , which restrict the exciton fluid to channels that spontaneously break the translational symmetry of the lattice. Our results demonstrate that Coulomb-coupled moiré lattices are fertile ground for correlated many-boson phenomena.
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Submitted 15 May, 2022;
originally announced May 2022.
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Intrinsic spin Hall torque in a moire Chern magnet
Authors:
C. L. Tschirhart,
Evgeny Redekop,
Lizhong Li,
Tingxin Li,
Shengwei Jiang,
T. Arp,
O. Sheekey,
Takashi Taniguchi,
Kenji Watanabe,
Kin Fai Mak,
Jie Shan,
A. F. Young
Abstract:
In spin torque magnetic memories, electrically actuated spin currents are used to switch a magnetic bit. Typically, these require a multilayer geometry including both a free ferromagnetic layer and a second layer providing spin injection. For example, spin may be injected by a nonmagnetic layer exhibiting a large spin Hall effect, a phenomenon known as spin-orbit torque. Here, we demonstrate a spi…
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In spin torque magnetic memories, electrically actuated spin currents are used to switch a magnetic bit. Typically, these require a multilayer geometry including both a free ferromagnetic layer and a second layer providing spin injection. For example, spin may be injected by a nonmagnetic layer exhibiting a large spin Hall effect, a phenomenon known as spin-orbit torque. Here, we demonstrate a spin-orbit torque magnetic bit in a single two-dimensional system with intrinsic magnetism and strong Berry curvature. We study AB-stacked MoTe2/WSe2, which hosts a magnetic Chern insulator at a carrier density of one hole per moire superlattice site. We observe hysteretic switching of the resistivity as a function of applied current. Magnetic imaging using a superconducting quantum interference device reveals that current switches correspond to reversals of individual magnetic domains. The real space pattern of domain reversals aligns precisely with spin accumulation measured near the high-Berry curvature Hubbard band edges. This suggests that intrinsic spin- or valley-Hall torques drive the observed current-driven magnetic switching in both MoTe2/WSe2 and other moire materials. The switching current density of 10^3 Amps per square centimeter is significantly less than reported in other platforms paving the way for efficient control of magnetic order.
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Submitted 5 May, 2022;
originally announced May 2022.
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Frustrated magnetic interactions in a Wigner-Mott insulator
Authors:
Yanhao Tang,
Kaixiang Su,
Lizhong Li,
Yang Xu,
Song Liu,
Kenji Watanabe,
Takashi Taniguchi,
James Hone,
Chao-Ming Jian,
Cenke Xu,
Kin Fai Mak,
Jie Shan
Abstract:
Two-dimensional semiconductor moiré materials have emerged as a highly controllable platform to simulate and explore quantum condensed matter. Compared to real solids, electrons in semiconductor moiré materials are less strongly attracted to the moiré lattice sites, making the nonlocal contributions to the magnetic interactions as important as the Anderson super-exchange. It provides a unique plat…
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Two-dimensional semiconductor moiré materials have emerged as a highly controllable platform to simulate and explore quantum condensed matter. Compared to real solids, electrons in semiconductor moiré materials are less strongly attracted to the moiré lattice sites, making the nonlocal contributions to the magnetic interactions as important as the Anderson super-exchange. It provides a unique platform to study the effects of competing magnetic interactions. Here, we report the observation of strongly frustrated magnetic interactions in a Wigner-Mott insulating state at 2/3 filling of the moiré lattice in angle-aligned WSe2/WS2 heterobilayers. Magneto-optical measurements show that the net exchange interaction is antiferromagnetic for filling factors below 1 with a strong suppression at 2/3 filling. The suppression is lifted upon screening of the long-range Coulomb interactions and melting of the Wigner-Mott insulator by a nearby metallic gate. The results can be qualitatively captured by a honeycomb-lattice spin model with an antiferromagnetic nearest-neighbor coupling and a ferromagnetic second-neighbor coupling. Our study establishes semiconductor moiré materials as a model system for the lattice-spin physics and frustrated magnetism.
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Submitted 17 April, 2022;
originally announced April 2022.
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Tunable bilayer Hubbard model physics in twisted WSe2
Authors:
Yang Xu,
Kaifei Kang,
Kenji Watanabe,
Takashi Taniguchi,
Kin Fai Mak,
Jie Shan
Abstract:
Moiré materials with flat electronic bands provide a highly controllable quantum system for studies of strong-correlation physics and topology. In particular, angle-aligned heterobilayers of semiconducting transition metal dichalcogenides (TMDs) with large band offset realize the single-band Hubbard models. Introduction of a new layer degree of freedom is expected to foster richer interactions, en…
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Moiré materials with flat electronic bands provide a highly controllable quantum system for studies of strong-correlation physics and topology. In particular, angle-aligned heterobilayers of semiconducting transition metal dichalcogenides (TMDs) with large band offset realize the single-band Hubbard models. Introduction of a new layer degree of freedom is expected to foster richer interactions, enabling Hund's physics, interlayer exciton condensation and new superconducting pairing mechanisms to name a few. Here, we report competing electronic orders in twisted AB-homobilayer WSe2, which realizes a bilayer Hubbard model in the weak interlayer hopping limit for holes. We characterize the charge order, layer polarization and magnetization of the moiré bilayer, subjected to an out-of-plane electric and magnetic field, by exciton sensing and magneto circular dichroism measurements. By layer-polarizing holes via the electric field, we observe a crossover from an excitonic insulator to a charge-transfer insulator at hole density of $ν$=1 (in unit of moiré density), a transition from a paramagnetic to an antiferromagnetic charge-transfer insulator at $ν$=2, and evidence for a layer-selective Mott insulator at 1<$ν$<2. The unique coupling of charge and spin to external fields also manifests a giant magneto-electric response. Our results establish a new solid-state simulator for problems in strong-correlation physics that are described by bilayer Hubbard models.
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Submitted 4 February, 2022;
originally announced February 2022.
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Dielectric catastrophe at the Mott and Wigner transitions in a moiré superlattice
Authors:
Yanhao Tang,
Jie Gu,
Song Liu,
Kenji Watanabe,
Takashi Taniguchi,
James C. Hone,
Kin Fai Mak,
Jie Shan
Abstract:
The metal-insulator transition (MIT) driven by electronic correlations is a fundamental and challenging problem in condensed-matter physics. Particularly, whether such a transition can be continuous remains open. The emergence of semiconducting moiré materials with continuously tunable bandwidth provides an ideal platform to study interaction-driven MITs. Although a bandwidth-tuned MIT at fixed fu…
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The metal-insulator transition (MIT) driven by electronic correlations is a fundamental and challenging problem in condensed-matter physics. Particularly, whether such a transition can be continuous remains open. The emergence of semiconducting moiré materials with continuously tunable bandwidth provides an ideal platform to study interaction-driven MITs. Although a bandwidth-tuned MIT at fixed full electron filling of the moiré superlattice has been reported recently, that at fractional filling, which involves translational symmetry breaking of the underlying superlattice, remains elusive. Here, we demonstrate bandwidth-tuned MITs in a MoSe2/WS2 moiré superlattice at both integer and fractional fillings using the exciton sensing technique. The bandwidth is controlled by an out-of-plane electric field. The dielectric response is probed optically with the 2s exciton in a remote WSe2 sensor layer. The exciton spectral weight is negligible for the metallic state, consistent with a large negative dielectric constant. It continuously vanishes when the transition is approached from the insulating side, corresponding to a diverging dielectric constant or a "dielectric catastrophe". Our results support continuous interaction-driven MITs in a two-dimensional triangular lattice and stimulate future explorations of exotic quantum phases, such as quantum spin liquids, in their vicinities.
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Submitted 29 January, 2022;
originally announced January 2022.
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Van der Waals pi Josephson junctions
Authors:
Kaifei Kang,
Helmuth Berger,
Kenji Watanabe,
Takashi Taniguchi,
Laszlo Forro,
Jie Shan,
Kin Fai Mak
Abstract:
Proximity-induced superconductivity in a ferromagnet can induce Cooper pairs with a finite center-of-mass momentum. The resultant spatially modulated superconducting order parameter is able to stabilize Josephson junctions (JJs) with pi phase difference in superconductor-ferromagnet heterostructures and realize 'quiet' phase qubits. The emergence of two-dimensional (2D) layered superconducting and…
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Proximity-induced superconductivity in a ferromagnet can induce Cooper pairs with a finite center-of-mass momentum. The resultant spatially modulated superconducting order parameter is able to stabilize Josephson junctions (JJs) with pi phase difference in superconductor-ferromagnet heterostructures and realize 'quiet' phase qubits. The emergence of two-dimensional (2D) layered superconducting and magnetic materials promises a new platform for realizing pi JJs with atomically sharp interfaces by van der Waals stacking. Here we demonstrate a thickness-driven 0-pi transition in JJs made of NbSe2 (an Ising superconductor) with a Cr2Ge2Te6 (a ferromagnetic semiconductor) weak link. By systematically varying the Cr2Ge2Te6 thickness, we observe a vanishing supercurrent at a critical thickness around 8 nm, followed by a re-entrant supercurrent upon further increase in thickness. Near the critical thickness, we further observe unusual supercurrent interference patterns with vanishing critical current around zero in-plane magnetic field. They signify the formation of 0-pi JJs (with both 0 and pi regions) likely induced by the nanoscale magnetic domains in Cr2Ge2Te6. Our work highlights the potential of van der Waals superconductor-ferromagnet heterostructures for the explorations of unconventional superconductivity and superconducting electronics.
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Submitted 26 January, 2022; v1 submitted 23 January, 2022;
originally announced January 2022.
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Air Stable and Layer Dependent Ferromagnetism in Atomically Thin van der Waals CrPS$_{4}$
Authors:
Joolee Son,
Suhan Son,
Pyeongjae Park,
Maengsuk Kim,
Zui Tao,
Juhyun Oh,
Taehyeon Lee,
Sanghyun Lee,
Junghyun Kim,
Kaixuan Zhang,
Kwanghee Cho,
Takashi Kamiyama,
Jun Hee Lee,
Kin Fai Mak,
Jie Shan,
Miyoung Kim,
Je-Geun Park,
Jieun Lee
Abstract:
Ferromagnetism in two-dimensional materials presents a promising platform for the development of ultrathin spintronic devices with advanced functionalities. Recently discovered ferromagnetic van der Waals crystals such as CrI$_{3}$, readily isolated two-dimensional crystals, are highly tunable through external fields or structural modifications. However, there remains a challenge because of materi…
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Ferromagnetism in two-dimensional materials presents a promising platform for the development of ultrathin spintronic devices with advanced functionalities. Recently discovered ferromagnetic van der Waals crystals such as CrI$_{3}$, readily isolated two-dimensional crystals, are highly tunable through external fields or structural modifications. However, there remains a challenge because of material instability under air exposure. Here, we report the observation of an air stable and layer dependent ferromagnetic (FM) van der Waals crystal, CrPS$_{4}$, using magneto-optic Kerr effect microscopy. In contrast to the antiferromagnetic (AFM) bulk, the FM out-of-plane spin orientation is found in the monolayer crystal. Furthermore, alternating AFM and FM properties observed in even and odd layers suggest robust antiferromagnetic exchange interactions between layers. The observed ferromagnetism in these crystals remains resilient even after the air exposure of about a day, providing possibilities for the practical applications of van der Waals spintronics.
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Submitted 18 October, 2021;
originally announced October 2021.
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Dipolar excitonic insulator in a moire lattice
Authors:
Jie Gu,
Liguo Ma,
Song Liu,
Kenji Watanabe,
Takashi Taniguchi,
James C. Hone,
Jie Shan,
Kin Fai Mak
Abstract:
Two-dimensional (2D) moire materials provide a new solid-state platform with unprecedented controllability for studies of correlated quantum phenomena. To date, experimental studies have focused on the correlated electronic states; the correlated bosonic states in moire materials have remained practically unexplored. Here, we report a correlated dipolar excitonic insulator, a charge insulating sta…
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Two-dimensional (2D) moire materials provide a new solid-state platform with unprecedented controllability for studies of correlated quantum phenomena. To date, experimental studies have focused on the correlated electronic states; the correlated bosonic states in moire materials have remained practically unexplored. Here, we report a correlated dipolar excitonic insulator, a charge insulating state driven by the formation of excitons, in a Coulomb-coupled WSe2 monolayer and WSe2/WS2 moire bilayer at total hole doping density equal to the moire density. The system is a Mott insulator when all the holes reside in the moire layer. Under an out-of-plane electric field, the holes can be continuously transferred to the WSe2 monolayer, but remain strongly bound to the empty moire sites; they form an interlayer exciton fluid in the moire superlattice under a particle-hole transformation. We identify the phase space and determine the charge gap energy of the excitonic insulating state by optical spectroscopy and capacitance measurements, respectively. We further observe the emergence of local magnetic moments in the WSe2 monolayer induced by the strong interlayer Coulomb correlation. Our demonstration of an exciton fluid in a lattice paves the path for realizing correlated bosonic quantum phenomena described by the Bose-Hubbard model in a solid-state system.
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Submitted 17 August, 2021; v1 submitted 14 August, 2021;
originally announced August 2021.
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Quantum oscillations in 2D insulators induced by graphite gates
Authors:
Jiacheng Zhu,
Tingxin Li,
Andrea F. Young,
Jie Shan,
Kin Fai Mak
Abstract:
We demonstrate a mechanism for magnetoresistance oscillations in insulating states of two-dimensional (2D) materials arising from the interaction of the 2D layer and proximal graphite gates. We study a series of devices based on different two-dimensional systems, including mono- and bilayer Td-WTe2, angle-aligned MoTe2/WSe2 heterobilayers and Bernal-stacked bilayer graphene, which all share a simi…
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We demonstrate a mechanism for magnetoresistance oscillations in insulating states of two-dimensional (2D) materials arising from the interaction of the 2D layer and proximal graphite gates. We study a series of devices based on different two-dimensional systems, including mono- and bilayer Td-WTe2, angle-aligned MoTe2/WSe2 heterobilayers and Bernal-stacked bilayer graphene, which all share a similar graphite-gated geometry. We find that the resistivity of the 2D system generically shows quantum oscillations as a function of magnetic field corresponding to a high-density Fermi surface when they are tuned near an insulating state, in contravention of naïve band theory. Simultaneous measurement of the resistivity of the graphite gates show that these oscillations are precisely correlated with quantum oscillations in the resistivity of the graphite gates themselves. Further supporting this connection, the oscillations are quenched when the graphite gate is replaced by TaSe2, a high-density metal that does not show quantum oscillations. The observed phenomenon arises from the oscillatory behavior of graphite density of states, which modulates the device capacitance and, as a consequence, the carrier density in the sample layer even when a constant electrochemical potential is maintained between the sample and the gate electrode. Oscillations are most pronounced near insulating states where the resistivity is strongly density dependent. Our study suggests a unified mechanism for quantum oscillations in graphite-gated 2D insulators based on sample-gate coupling.
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Submitted 29 July, 2021; v1 submitted 21 July, 2021;
originally announced July 2021.
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Quantum anomalous Hall effect from intertwined moiré bands
Authors:
Tingxin Li,
Shengwei Jiang,
Bowen Shen,
Yang Zhang,
Lizhong Li,
Trithep Devakul,
Kenji Watanabe,
Takashi Taniguchi,
Liang Fu,
Jie Shan,
Kin Fai Mak
Abstract:
Electron correlation and topology are two central threads of modern condensed matter physics. Semiconductor moiré materials provide a highly tunable platform for studies of electron correlation. Correlation-driven phenomena, including the Mott insulator, generalized Wigner crystals, stripe phases and continuous Mott transition, have been demonstrated. However, nontrivial band topology has remained…
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Electron correlation and topology are two central threads of modern condensed matter physics. Semiconductor moiré materials provide a highly tunable platform for studies of electron correlation. Correlation-driven phenomena, including the Mott insulator, generalized Wigner crystals, stripe phases and continuous Mott transition, have been demonstrated. However, nontrivial band topology has remained elusive. Here we report the observation of a quantum anomalous Hall (QAH) effect in AB-stacked MoTe2/WSe2 moiré heterobilayers. Unlike in the AA-stacked structures, an out-of-plane electric field controls not only the bandwidth but also the band topology by intertwining moiré bands centered at different high-symmetry stacking sites. At half band filling, corresponding to one particle per moiré unit cell, we observe quantized Hall resistance, h/e2 (with h and e denoting the Planck's constant and electron charge, respectively), and vanishing longitudinal resistance at zero magnetic field. The electric-field-induced topological phase transition from a Mott insulator to a QAH insulator precedes an insulator-to-metal transition; contrary to most known topological phase transitions, it is not accompanied by a bulk charge gap closure. Our study paves the path for discovery of a wealth of emergent phenomena arising from the combined influence of strong correlation and topology in semiconductor moiré materials.
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Submitted 5 July, 2021;
originally announced July 2021.
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Valley-Polarized Quantum Anomalous Hall State in Moiré MoTe$_2$/WSe$_2$ Heterobilayers
Authors:
Ying-Ming Xie,
Cheng-Ping Zhang,
Jin-Xin Hu,
Kin Fai Mak,
K. T. Law
Abstract:
Moiré heterobilayer transition metal dichalcogenides (TMDs) emerge as an ideal system for simulating the single-band Hubbard model and interesting correlated phases have been observed in these systems. Nevertheless, the moiré bands in heterobilayer TMDs were believed to be topologically trivial. Recently, it was reported that both a quantum valley Hall insulating state at filling $ν=2$ (two holes…
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Moiré heterobilayer transition metal dichalcogenides (TMDs) emerge as an ideal system for simulating the single-band Hubbard model and interesting correlated phases have been observed in these systems. Nevertheless, the moiré bands in heterobilayer TMDs were believed to be topologically trivial. Recently, it was reported that both a quantum valley Hall insulating state at filling $ν=2$ (two holes per moiré unit cell) and a valley-polarized quantum anomalous Hall state at filling $ν=1$ were observed in AB stacked moiré MoTe$_2$/WSe$_2$ heterobilayers. However, how the topologically nontrivial states emerge is not known. In this work, we propose that the pseudo-magnetic fields induced by lattice relaxation in moiré MoTe$_2$/WSe$_2$ heterobilayers could naturally give rise to moiré bands with finite Chern numbers. We show that a time-reversal invariant quantum valley Hall insulator is formed at full-filing $ν=2$, when two moiré bands with opposite Chern numbers are filled. At half-filling $ν=1$, Coulomb interaction lifts the valley degeneracy and results in a valley-polarized quantum anomalous Hall state, as observed in the experiment. Our theory identifies a new way to achieve topologically non-trivial states in heterobilayer TMD materials.
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Submitted 14 January, 2022; v1 submitted 26 June, 2021;
originally announced June 2021.
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Spin dynamics slowdown near the antiferromagnetic critical point in atomically thin FePS3
Authors:
Xiao-Xiao Zhang,
Shengwei Jiang,
Jinhwan Lee,
Changgu Lee,
Kin Fai Mak,
Jie Shan
Abstract:
Two-dimensional (2D) magnetic materials have attracted much recent interest with unique properties emerging at the few-layer limit. Beyond the reported impacts on the static magnetic properties, the effects of reducing the dimensionality on the magnetization dynamics are also of fundamental interest and importance for 2D device development. In this report, we investigate the spin dynamics in atomi…
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Two-dimensional (2D) magnetic materials have attracted much recent interest with unique properties emerging at the few-layer limit. Beyond the reported impacts on the static magnetic properties, the effects of reducing the dimensionality on the magnetization dynamics are also of fundamental interest and importance for 2D device development. In this report, we investigate the spin dynamics in atomically-thin antiferromagnetic FePS3 of varying layer numbers using ultrafast pump-probe spectroscopy. Following the absorption of an optical pump pulse, the time evolution of the antiferromagnetic order parameter is probed by magnetic linear birefringence. We observe a strong divergence in the demagnetization time near the Néel temperature. The divergence can be characterized by a power-law dependence on the reduced temperature, with an exponent decreasing with sample thickness. We compare our results to expectations from critical slowing down and a two-temperature model involving spins and phonons, and discuss the possible relevance of spin-substrate phonon interactions.
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Submitted 9 June, 2021;
originally announced June 2021.
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Strongly correlated excitonic insulator in atomic double layers
Authors:
Liguo Ma,
Phuong X. Nguyen,
Zefang Wang,
Yongxin Zeng,
Kenji Watanabe,
Takashi Taniguchi,
Allan H. MacDonald,
Kin Fai Mak,
Jie Shan
Abstract:
Excitonic insulators (EI) arise from the formation of bound electron-hole pairs (excitons) in semiconductors and provide a solid-state platform for quantum many-boson physics. Strong exciton-exciton repulsion is expected to stabilize condensed superfluid and crystalline phases by suppressing both density and phase fluctuations. Although spectroscopic signatures of EIs have been reported, conclusiv…
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Excitonic insulators (EI) arise from the formation of bound electron-hole pairs (excitons) in semiconductors and provide a solid-state platform for quantum many-boson physics. Strong exciton-exciton repulsion is expected to stabilize condensed superfluid and crystalline phases by suppressing both density and phase fluctuations. Although spectroscopic signatures of EIs have been reported, conclusive evidence for strongly correlated EI states has remained elusive. Here, we demonstrate a strongly correlated spatially indirect two-dimensional (2D) EI ground state formed in transition metal dichalcogenide (TMD) semiconductor double layers. An equilibrium interlayer exciton fluid is formed when the bias voltage applied between the two electrically isolated TMD layers, is tuned to a range that populates bound electron-hole pairs, but not free electrons or holes. Capacitance measurements show that the fluid is exciton-compressible but charge-incompressible - direct thermodynamic evidence of the EI. The fluid is also strongly correlated with a dimensionless exciton coupling constant exceeding 10. We further construct an exciton phase diagram that reveals both the Mott transition and interaction-stabilized quasi-condensation. Our experiment paves the path for realizing the exotic quantum phases of excitons, as well as multi-terminal exciton circuitry for applications.
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Submitted 13 April, 2021; v1 submitted 11 April, 2021;
originally announced April 2021.
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Evidence of high-temperature exciton condensation in 2D atomic double layers
Authors:
Zefang Wang,
Daniel A. Rhodes,
Kenji Watanabe,
Takashi Taniguchi,
James C. Hone,
Jie Shan,
Kin Fai Mak
Abstract:
A Bose-Einstein condensate is the ground state of a dilute gas of bosons, such as atoms cooled to temperatures close to absolute zero. With much smaller mass, excitons (bound electron-hole pairs) are expected to condense at significantly higher temperatures. Here we study electrically generated interlayer excitons in MoSe2/WSe2 atomic double layers with density up to 10^12 cm-2. The interlayer tun…
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A Bose-Einstein condensate is the ground state of a dilute gas of bosons, such as atoms cooled to temperatures close to absolute zero. With much smaller mass, excitons (bound electron-hole pairs) are expected to condense at significantly higher temperatures. Here we study electrically generated interlayer excitons in MoSe2/WSe2 atomic double layers with density up to 10^12 cm-2. The interlayer tunneling current depends only on exciton density, indicative of correlated electron-hole pair tunneling. Strong electroluminescence (EL) arises when a hole tunnels from WSe2 to recombine with electron in MoSe2. We observe a critical threshold dependence of the EL intensity on exciton density, accompanied by a super-Poissonian photon statistics near threshold, and a large EL enhancement peaked narrowly at equal electron-hole densities. The phenomenon persists above 100 K, which is consistent with the predicted critical condensation temperature. Our study provides compelling evidence for interlayer exciton condensation in two-dimensional atomic double layers and opens up exciting opportunities for exploring condensate-based optoelectronics and exciton-mediated high-temperature superconductivity.
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Submitted 29 March, 2021;
originally announced March 2021.
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Tunable exciton-optomechanical coupling in suspended monolayer MoSe2
Authors:
Hongchao Xie,
Shengwei Jiang,
Daniel A. Rhodes,
James C. Hone,
Jie Shan,
Kin Fai Mak
Abstract:
The strong excitonic effect in monolayer transition metal dichalcogenide (TMD) semiconductors has enabled many fascinating light-matter interaction phenomena. Examples include strongly coupled exciton-polaritons and nearly perfect atomic monolayer mirrors. The strong light-matter interaction also opens the door for dynamical control of mechanical motion through the exciton resonance of monolayer T…
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The strong excitonic effect in monolayer transition metal dichalcogenide (TMD) semiconductors has enabled many fascinating light-matter interaction phenomena. Examples include strongly coupled exciton-polaritons and nearly perfect atomic monolayer mirrors. The strong light-matter interaction also opens the door for dynamical control of mechanical motion through the exciton resonance of monolayer TMDs. Here we report the observation of exciton-optomechanical coupling in a suspended monolayer MoSe2 mechanical resonator. By moderate optical pumping near the MoSe2 exciton resonance, we have observed optical damping and anti-damping of mechanical vibrations as well as the optical spring effect. The exciton-optomechanical coupling strength is also gate-tunable. Our observations can be understood in a model based on photothermal backaction and gate-induced mirror symmetry breaking in the device structure. The observation of gate-tunable exciton-optomechanical coupling in a monolayer semiconductor may find applications in nanoelectromechanical systems (NEMS) and in exciton-optomechanics.
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Submitted 11 April, 2021; v1 submitted 17 March, 2021;
originally announced March 2021.
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Emergence of a noncollinear magnetic state in twisted bilayer CrI3
Authors:
Yang Xu,
Ariana Ray,
Yu-Tsun Shao,
Shengwei Jiang,
Daniel Weber,
Joshua E. Goldberger,
Kenji Watanabe,
Takashi Taniguchi,
David A. Muller,
Kin Fai Mak,
Jie Shan
Abstract:
The emergence of two-dimensional (2D) magnetic crystals and moiré engineering has opened the door for devising new magnetic ground states via competing interactions in moiré superlattices. Although a suite of interesting phenomena, including multi-flavor magnetic states, noncollinear magnetic states, moiré magnon bands and magnon networks, has been predicted, nontrivial magnetic ground states in t…
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The emergence of two-dimensional (2D) magnetic crystals and moiré engineering has opened the door for devising new magnetic ground states via competing interactions in moiré superlattices. Although a suite of interesting phenomena, including multi-flavor magnetic states, noncollinear magnetic states, moiré magnon bands and magnon networks, has been predicted, nontrivial magnetic ground states in twisted bilayer magnetic crystals have yet to be realized. Here, by utilizing the stacking-dependent interlayer exchange interactions in CrI3, we demonstrate in small-twist-angle bilayer CrI3 a noncollinear magnetic ground state. It consists of both antiferromagnetic (AF) and ferromagnetic (FM) domains and is a result of the competing interlayer AF coupling in the monoclinic stacking regions of the moiré superlattice and the energy cost for forming AF-FM domain walls. Above the critical twist angle of ~ 3°, the noncollinear state transitions abruptly to a collinear FM ground state. We further show that the noncollinear magnetic state can be controlled by gating through the doping-dependent interlayer AF interaction. Our results demonstrate the possibility of engineering moiré magnetism in twisted bilayer magnetic crystals, as well as gate-voltage-controllable high-density magnetic memory storage.
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Submitted 17 March, 2021;
originally announced March 2021.
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Continuous Mott transition in semiconductor moiré superlattices
Authors:
Tingxin Li,
Shengwei Jiang,
Lizhong Li,
Yang Zhang,
Kaifei Kang,
Jiacheng Zhu,
Kenji Watanabe,
Takashi Taniguchi,
Debanjan Chowdhury,
Liang Fu,
Jie Shan,
Kin Fai Mak
Abstract:
The evolution of a Landau Fermi liquid into a nonmagnetic Mott insulator with increasing electronic interactions is one of the most puzzling quantum phase transitions in physics. The vicinity of the transition is believed to host exotic states of matter such as quantum spin liquids, exciton condensates and unconventional superconductivity. Semiconductor moiré materials realize a highly controllabl…
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The evolution of a Landau Fermi liquid into a nonmagnetic Mott insulator with increasing electronic interactions is one of the most puzzling quantum phase transitions in physics. The vicinity of the transition is believed to host exotic states of matter such as quantum spin liquids, exciton condensates and unconventional superconductivity. Semiconductor moiré materials realize a highly controllable Hubbard model simulator on a triangular lattice, providing a unique opportunity to drive a metal-insulator transition (MIT) via continuous tuning of the electronic interactions. Here, by electrically tuning the effective interaction strength in MoTe2/WSe2 moiré superlattices, we observe a continuous MIT at a fixed filling of one electron per unit cell. The existence of quantum criticality is supported by the scaling behavior of the resistance, a continuously vanishing charge-gap as the critical point is approached from the insulating side, and a diverging quasiparticle effective mass from the metallic side. We also observe a smooth evolution of the low-temperature magnetic susceptibility across the MIT and find no evidence of long-range magnetic order down to ~ 5% of the Curie-Weiss temperature. The results signal an abundance of low-energy spinful excitations on the insulating side that is further corroborated by the presence of the Pomeranchuk effect on the metallic side. Our results are consistent with the universal critical theory of a continuous MIT from a Landau Fermi liquid to a nonmagnetic Mott insulator in two dimensions.
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Submitted 17 March, 2021;
originally announced March 2021.
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Charge-order-enhanced capacitance in semiconductor moiré superlattices
Authors:
Tingxin Li,
Jiacheng Zhu,
Yanhao Tang,
Kenji Watanabe,
Takashi Taniguchi,
Veit Elser,
Jie Shan,
Kin Fai Mak
Abstract:
Van der Waals moiré materials have emerged as a highly controllable platform to study the electronic correlation phenomena. In particular, robust correlated insulating states have recently been discovered at both integer and fractional filling factors of the semiconductor moiré systems. Here, we reveal the thermodynamic properties of these states by measuring the gate capacitance of MoSe2/WS2 moir…
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Van der Waals moiré materials have emerged as a highly controllable platform to study the electronic correlation phenomena. In particular, robust correlated insulating states have recently been discovered at both integer and fractional filling factors of the semiconductor moiré systems. Here, we reveal the thermodynamic properties of these states by measuring the gate capacitance of MoSe2/WS2 moiré superlattices. We observe a series of incompressible states for filling factor 0 - 8 and anomalously large capacitance (nearly 60% above the device's geometrical capacitance) in the intervening compressible regions. The anomalously large capacitance is most pronounced at small filling factor, below the melting temperature of the charge-ordered states, and for small sample-gate separation. It is a manifestation of the device-geometry-dependent Coulomb interaction between electrons and phase mixing of the charge-ordered states. We have further extracted the thermodynamic gap of the correlated insulating states and the entropy of the capacitive device. The results not only establish capacitance as a powerful probe of the correlated states in semiconductor moiré systems, but also demonstrate control of the extended Coulomb interaction in these materials via sample-gate coupling.
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Submitted 22 February, 2021;
originally announced February 2021.
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Giant anisotropic magnetoresistance in Ising superconductor-magnetic insulator tunnel junctions
Authors:
Kaifei Kang,
Shengwei Jiang,
Helmuth Berger,
Kenji Watanabe,
Takashi Taniguchi,
László Forró,
Jie Shan,
Kin Fai Mak
Abstract:
Superconductivity and magnetism are generally incompatible because of the opposing requirement on electron spin alignment. When combined, they produce a multitude of fascinating phenomena, including unconventional superconductivity and topological superconductivity. The emergence of two-dimensional (2D)layered superconducting and magnetic materials that can form nanoscale junctions with atomically…
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Superconductivity and magnetism are generally incompatible because of the opposing requirement on electron spin alignment. When combined, they produce a multitude of fascinating phenomena, including unconventional superconductivity and topological superconductivity. The emergence of two-dimensional (2D)layered superconducting and magnetic materials that can form nanoscale junctions with atomically sharp interfaces presents an ideal laboratory to explore new phenomena from coexisting superconductivity and magnetic ordering. Here we report tunneling spectroscopy under an in-plane magnetic field of superconductor-ferromagnet-superconductor (S/F/S) tunnel junctions that are made of 2D Ising superconductor NbSe2 and ferromagnetic insulator CrBr3. We observe nearly 100% tunneling anisotropic magnetoresistance (AMR), that is, difference in tunnel resistance upon changing magnetization direction from out-of-plane to inplane. The giant tunneling AMR is induced by superconductivity, particularly, a result of interfacial magnetic exchange coupling and spin-dependent quasiparticle scattering. We also observe an intriguing magnetic hysteresis effect in superconducting gap energy and quasiparticle scattering rate with a critical temperature that is 2 K below the superconducting transition temperature. Our study paves the path for exploring superconducting spintronic and unconventional superconductivity in van der Waals heterostructures.
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Submitted 4 January, 2021;
originally announced January 2021.
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Direct observation of distinct minibands in moiré superlattices
Authors:
Saien Xie,
Brendan D. Faeth,
Yanhao Tang,
Lizhong Li,
Christopher T. Parzyck,
Debanjan Chowdhury,
Ya-Hui Zhang,
Christopher Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Jie Shan,
Kin Fai Mak,
Kyle M. Shen
Abstract:
Moiré superlattices comprised of stacked two-dimensional materials present a versatile platform for engineering and investigating new emergent quantum states of matter. At present, the vast majority of investigated systems have long moiré wavelengths, but investigating these effects at shorter, incommensurate wavelengths, and at higher energy scales, remains a challenge. Here, we employ angle-reso…
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Moiré superlattices comprised of stacked two-dimensional materials present a versatile platform for engineering and investigating new emergent quantum states of matter. At present, the vast majority of investigated systems have long moiré wavelengths, but investigating these effects at shorter, incommensurate wavelengths, and at higher energy scales, remains a challenge. Here, we employ angle-resolved photoemission spectroscopy (ARPES) with sub-micron spatial resolution to investigate a series of different moiré superlattices which span a wide range of wavelengths, from a short moiré wavelength of 0.5 nm for a graphene/WSe2 (g/WSe2) heterostructure, to a much longer wavelength of 8 nm for a WS2/WSe2 heterostructure. We observe the formation of minibands with distinct dispersions formed by the moiré potential in both systems. Finally, we discover that the WS2/WSe2 heterostructure can imprint a surprisingly large moiré potential on a third, separate layer of graphene (g/WS2/WSe2), suggesting a new avenue for engineering moiré superlattices in two-dimensional materials.
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Submitted 15 October, 2020;
originally announced October 2020.
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Stripe phases in WSe2/WS2 moiré superlattices
Authors:
Chenhao Jin,
Zui Tao,
Tingxin Li,
Yang Xu,
Yanhao Tang,
Jiacheng Zhu,
Song Liu,
Kenji Watanabe,
Takashi Taniguchi,
James C. Hone,
Liang Fu,
Jie Shan,
Kin Fai Mak
Abstract:
Stripe phases, in which the rotational symmetry of charge density is spontaneously broken, occur in many strongly correlated systems with competing interactions. One representative example is the copper-oxide superconductors, where stripe order is thought to be relevant to the mechanism of high-temperature superconductivity. Identifying and studying the stripe phases in conventional strongly corre…
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Stripe phases, in which the rotational symmetry of charge density is spontaneously broken, occur in many strongly correlated systems with competing interactions. One representative example is the copper-oxide superconductors, where stripe order is thought to be relevant to the mechanism of high-temperature superconductivity. Identifying and studying the stripe phases in conventional strongly correlated systems are, however, challenging due to the complexity and limited tunability of these materials. Here we uncover stripe phases in WSe2/WS2 moiré superlattices with continuously gate-tunable charge densities by combining optical anisotropy and electronic compressibility measurements. We find strong electronic anisotropy over a large doping range peaked at 1/2 filling of the moiré superlattice. The 1/2-state is incompressible and assigned to a (insulating) stripe crystal phase. It can be continuously melted by thermal fluctuations around 35 K. The domain configuration revealed by wide-field imaging shows a preferential alignment along the high-symmetry axes of the moiré superlattice. Away from 1/2 filling, we observe additional stripe crystals at commensurate filling 1/4, 2/5 and 3/5. The anisotropy also extends into the compressible regime of the system at incommensurate fillings, indicating the presence of electronic liquid crystal states. The observed filling-dependent stripe phases agree with the theoretical phase diagram of the extended Hubbard model on a triangular lattice in the flat band limit. Our results demonstrate that two-dimensional semiconductor moiré superlattices are a highly tunable platform to study the stripe phases and their interplay with other symmetry breaking ground states.
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Submitted 28 July, 2020; v1 submitted 23 July, 2020;
originally announced July 2020.
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Creation of moiré bands in a monolayer semiconductor by spatially periodic dielectric screening
Authors:
Yang Xu,
Connor Horn,
Jiacheng Zhu,
Yanhao Tang,
Liguo Ma,
Lizhong Li,
Song Liu,
Kenji Watanabe,
Takashi Taniguchi,
James C. Hone,
Jie Shan,
Kin Fai Mak
Abstract:
Moiré superlattices of two-dimensional van der Waals materials have emerged as a powerful platform for designing electronic band structures and discovering emergent physical phenomena. A key concept involves the creation of long-wavelength periodic potential and moiré bands in a crystal through interlayer hybridization when two materials are overlaid. Here we demonstrate a new approach based on sp…
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Moiré superlattices of two-dimensional van der Waals materials have emerged as a powerful platform for designing electronic band structures and discovering emergent physical phenomena. A key concept involves the creation of long-wavelength periodic potential and moiré bands in a crystal through interlayer hybridization when two materials are overlaid. Here we demonstrate a new approach based on spatially periodic dielectric screening to create moiré bands in a monolayer semiconductor. It relies on reduced dielectric screening of the Coulomb interactions in monolayer semiconductors and their environmental dielectric-dependent electronic band structure. We observe optical transitions between moiré bands in monolayer WSe$_{2}$ when it is placed close to small angle-misaligned graphene on hexagonal boron nitride. The moiré bands are a result of long-range Coulomb interactions, strongly gate-tunable, and can have versatile superlattice symmetries independent of the crystal lattice of the host material. Our result also demonstrates that monolayer semiconductors are sensitive local dielectric sensors.
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Submitted 22 July, 2020;
originally announced July 2020.
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Abundance of correlated insulating states at fractional fillings of WSe$_{2}$/WS$_{2}$ moiré superlattices
Authors:
Yang Xu,
Song Liu,
Daniel A Rhodes,
Kenji Watanabe,
Takashi Taniguchi,
James Hone,
Veit Elser,
Kin Fai Mak,
Jie Shan
Abstract:
Quantum particles on a lattice with competing long-range interactions are ubiquitous in physics. Transition metal oxides, layered molecular crystals and trapped ion arrays are a few examples out of many. In the strongly interacting regime, these systems often exhibit a rich variety of quantum many-body ground states that challenge theory. The emergence of transition metal dichalcogenide moiré hete…
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Quantum particles on a lattice with competing long-range interactions are ubiquitous in physics. Transition metal oxides, layered molecular crystals and trapped ion arrays are a few examples out of many. In the strongly interacting regime, these systems often exhibit a rich variety of quantum many-body ground states that challenge theory. The emergence of transition metal dichalcogenide moiré heterostructures provides a highly controllable platform to study long-range electronic correlations. Here we report an observation of nearly two-dozen correlated insulating states at fractional fillings of a WSe$_{2}$/WS$_{2}$ moiré heterostructure. The discovery is enabled by a new optical sensing technique that is built on the sensitivity to dielectric environment of the exciton excited states in single-layer semiconductor WSe$_{2}$. The cascade of insulating states exhibits an energy ordering which is nearly symmetric about filling factor of half electron (or hole) per superlattice site. We propose a series of charge-ordered states at commensurate filling fractions that range from generalized Wigner crystals to charge density waves. Our study lays the groundwork for utilizing moiré superlattices to simulate a wealth of quantum many-body problems that are described by the two-dimensional t-V model or spin models with long-range charge-charge and exchange interactions.
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Submitted 21 July, 2020;
originally announced July 2020.
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Spectral and spatial isolation of single WSe$_2$ quantum emitters using hexagonal boron nitride wrinkles
Authors:
Raphaël S. Daveau,
Tom Vandekerckhove,
Arunabh Mukherjee,
Zefang Wang,
Jie Shan,
Kin Fai Mak,
A. Nick Vamivakas,
Gregory D. Fuchs
Abstract:
Monolayer WSe$_2$ hosts bright single-photon emitters. Because of its compliance, monolayer WSe$_2$ conforms to patterned substrates without breaking, thus creating the potential for large local strain, which is one activation mechanism of its intrinsic quantum emitters. Here, we report an approach to creating spatially and spectrally isolated quantum emitters from WSe$_2$ monolayers with few or n…
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Monolayer WSe$_2$ hosts bright single-photon emitters. Because of its compliance, monolayer WSe$_2$ conforms to patterned substrates without breaking, thus creating the potential for large local strain, which is one activation mechanism of its intrinsic quantum emitters. Here, we report an approach to creating spatially and spectrally isolated quantum emitters from WSe$_2$ monolayers with few or no detrimental sources of emission. We show that a bilayer of hexagonal boron nitride (hBN) and WSe$_2$ placed on a nanostructured substrate can be used to create and shape wrinkles that communicate local strain to the WSe$_2$, thus creating quantum emitters that are isolated from substrate features. We compare quantum emitters created directly on top of substrate features with quantum emitters forming along wrinkles and find that the spectra of the latter consist of mainly a single peak and a low background fluorescence. We also discuss possible approaches to controlling emitter position along hBN wrinkles.
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Submitted 14 May, 2020;
originally announced May 2020.