Hardware Acceleration for Knowledge Graph Processing: Challenges & Recent Developments
Authors:
Maciej Besta,
Robert Gerstenberger,
Patrick Iff,
Pournima Sonawane,
Juan Gómez Luna,
Raghavendra Kanakagiri,
Rui Min,
Grzegorz Kwaśniewski,
Onur Mutlu,
Torsten Hoefler,
Raja Appuswamy,
Aidan O Mahony
Abstract:
Knowledge graphs (KGs) have achieved significant attention in recent years, particularly in the area of the Semantic Web as well as gaining popularity in other application domains such as data mining and search engines. Simultaneously, there has been enormous progress in the development of different types of heterogeneous hardware, impacting the way KGs are processed. The aim of this paper is to p…
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Knowledge graphs (KGs) have achieved significant attention in recent years, particularly in the area of the Semantic Web as well as gaining popularity in other application domains such as data mining and search engines. Simultaneously, there has been enormous progress in the development of different types of heterogeneous hardware, impacting the way KGs are processed. The aim of this paper is to provide a systematic literature review of knowledge graph hardware acceleration. For this, we present a classification of the primary areas in knowledge graph technology that harnesses different hardware units for accelerating certain knowledge graph functionalities. We then extensively describe respective works, focusing on how KG related schemes harness modern hardware accelerators. Based on our review, we identify various research gaps and future exploratory directions that are anticipated to be of significant value both for academics and industry practitioners.
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Submitted 19 November, 2024; v1 submitted 22 August, 2024;
originally announced August 2024.
Plasma-enhanced atomic layer deposition of Al$_2$O$_3$ on graphene using monolayer hBN as interfacial layer
Authors:
Barbara Canto,
Martin Otto,
Michael J. Powell,
Vitaliy Babenko,
Aileen O Mahony,
Harm Knoops,
Ravi S. Sundaram,
Stephan Hofmann,
Max C. Lemme,
Daniel Neumaier
Abstract:
The deposition of dielectric materials on graphene is one of the bottlenecks for unlocking the potential of graphene in electronic applications. In this paper we demonstrate the plasma enhanced atomic layer deposition of 10 nm thin high quality Al$_2$O$_3$ on graphene using a monolayer of hBN as protection layer. Raman spectroscopy was performed to analyze possible structural changes of the graphe…
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The deposition of dielectric materials on graphene is one of the bottlenecks for unlocking the potential of graphene in electronic applications. In this paper we demonstrate the plasma enhanced atomic layer deposition of 10 nm thin high quality Al$_2$O$_3$ on graphene using a monolayer of hBN as protection layer. Raman spectroscopy was performed to analyze possible structural changes of the graphene lattice caused by the plasma deposition. The results show that a monolayer of hBN in combination with an optimized deposition process can effectively protect graphene from damage, while significant damage was observed without an hBN layer. Electrical characterization of double gated graphene field effect devices confirms that the graphene did not degrade during the plasma deposition of Al$_2$O$_3$. The leakage current densities were consistently below 1 nA/mm for electric fields across the insulators of up to 8 MV/cm, with irreversible breakdown happening above. Such breakdown electric fields are typical for Al$_2$O$_3$ and can be seen as an indicator for high quality dielectric films.
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Submitted 24 August, 2022;
originally announced August 2022.
