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Charge-Transfer Hyperbolic Polaritons in $α$-MoO$_3$/graphene heterostructures
Authors:
J. Shen,
M. Chen,
V. Korostelev,
H. Kim,
P. Fathi-Hafshejani,
M. Mahjouri-Samani,
K. Klyukin,
G-H. Lee,
S. Dai
Abstract:
Charge transfer is a fundamental interface process that can be harnessed for light detection, photovoltaics, and photosynthesis. Recently, charge transfer was exploited in nanophotonics to alter plasmon polaritons by involving additional non-polaritonic materials to activate the charge transfer. Yet, direct charge transfer between polaritonic materials hasn't been demonstrated. We report the direc…
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Charge transfer is a fundamental interface process that can be harnessed for light detection, photovoltaics, and photosynthesis. Recently, charge transfer was exploited in nanophotonics to alter plasmon polaritons by involving additional non-polaritonic materials to activate the charge transfer. Yet, direct charge transfer between polaritonic materials hasn't been demonstrated. We report the direct charge transfer in pure polaritonic van der Waals (vdW) heterostructures of $α$-MoO$_3$/graphene. We extracted the Fermi energy of 0.6 eV for graphene by infrared nano-imaging of charge transfer hyperbolic polaritons in the vdW heterostructure. This unusually high Fermi energy is attributed to the charge transfer between graphene and $α$-MoO$_3$. Moreover, we have observed charge transfer hyperbolic polaritons in multiple energy-momentum dispersion branches with a wavelength elongation of up to 150%. With support from the DFT calculation, we find that the charge transfer between graphene and $α$-MoO$_3$, absent in mechanically assembled vdW heterostructures, is attributed to the relatively pristine heterointerface preserved in the epitaxially grown vdW heterostructure. The direct charge transfer and charge transfer hyperbolic polaritons demonstrated in our work hold great promise for developing nano-optical circuits, computational devices, communication systems, and light and energy manipulation devices.
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Submitted 14 May, 2024;
originally announced May 2024.
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Exciton-activated effective phonon magnetic moment in monolayer MoS2
Authors:
Chunli Tang,
Gaihua Ye,
Cynthia Nnokwe,
Mengqi Fang,
Li Xiang,
Masoud Mahjouri-Samani,
Dmitry Smirnov,
Eui-Hyeok Yang,
Tingting Wang,
Lifa Zhang,
Rui He,
Wencan Jin
Abstract:
Optical excitation of chiral phonons plays a vital role in studying the phonon-driven magnetic phenomena in solids. Transition metal dichalcogenides host chiral phonons at high symmetry points of the Brillouin zone, providing an ideal platform to explore the interplay between chiral phonons and valley degree of freedom. Here, we investigate the helicity-resolved magneto-Raman response of monolayer…
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Optical excitation of chiral phonons plays a vital role in studying the phonon-driven magnetic phenomena in solids. Transition metal dichalcogenides host chiral phonons at high symmetry points of the Brillouin zone, providing an ideal platform to explore the interplay between chiral phonons and valley degree of freedom. Here, we investigate the helicity-resolved magneto-Raman response of monolayer MoS2 and identify a doubly degenerate Brillouin-zone-center chiral phonon mode at ~270 cm-1. Our wavelength- and temperature-dependent measurements show that this chiral phonon is activated through the resonant excitation of A exciton. Under an out-of-plane magnetic field, the chiral phonon exhibits giant Zeeman splitting, which corresponds to an effective magnetic moment of ~2.5mu_B. Moreover, we carry out theoretical calculations based on the morphic effects in nonmagnetic crystals, which reproduce the linear Zeeman splitting and Raman cross-section of the chiral phonon. Our study provides important insights into lifting the chiral phonon degeneracy in an achiral covalent material, paving a new route to excite and control chiral phonons.
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Submitted 7 April, 2024; v1 submitted 22 March, 2024;
originally announced March 2024.
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Introducing dusty plasma particle growth of nanospherical titanium dioxide
Authors:
Bhavesh Ramkorun,
Swapneal Jain,
Adib Taba,
Masoud Mahjouri-Samani,
Michael E. Miller,
Saikat C. Thakur,
Edward Thomas Jr.,
Ryan B. Comes
Abstract:
In dusty plasma environments, the spontaneous growth of nanoparticles from reactive gases has been extensively studied for over three decades, primarily focusing on hydrocarbons and silicate particles. Here, we introduce the growth of titanium dioxide, a wide band gap semiconductor, as dusty plasma nanoparticles. The resultant particles exhibited a spherical morphology and reached a maximum homoge…
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In dusty plasma environments, the spontaneous growth of nanoparticles from reactive gases has been extensively studied for over three decades, primarily focusing on hydrocarbons and silicate particles. Here, we introduce the growth of titanium dioxide, a wide band gap semiconductor, as dusty plasma nanoparticles. The resultant particles exhibited a spherical morphology and reached a maximum homogeneous radius of 230 $\pm$ 17 nm after an elapsed time of 70 seconds. The particle grew linearly and the growth displayed a cyclic behavior; that is, upon reaching their maximum radius, the largest particles fell out of the plasma, and a new growth cycle immediately followed. The particles were collected after being grown for different amounts of time and imaged using scanning electron microscopy. Further characterization was carried out using energy dispersive X-ray spectroscopy, X-ray diffraction and Raman spectroscopy to elucidate the chemical composition and crystalline properties of the maximally sized particles. Initially, the as-grown particles after 70 seconds exhibited an amorphous structure. However, annealing treatments at temperatures of 400 $^\circ$C and 800 $^\circ$C induced crystallization, yielding anatase and rutile phases, respectively. Notably, annealing at 600 $^\circ$C resulted in a mixed phase of anatase and rutile. These findings open new avenues for a rapid and controlled growth technique of titanium dioxide as dusty plasma.
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Submitted 26 October, 2023;
originally announced October 2023.
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Magnetism and Spin Dynamics in Room-Temperature van der Waals Magnet Fe$_5$GeTe$_2$
Authors:
Laith Alahmed,
Bhuwan Nepal,
Juan Macy,
Wenkai Zheng,
Arjun Sapkota,
Nicholas Jones,
Alessandro R. Mazza,
Matthew Brahlek,
Wencan Jin,
Masoud Mahjouri-Samani,
Steven S. L. Zhang,
Claudia Mewes,
Luis Balicas,
Tim Mewes,
Peng Li
Abstract:
Two-dimensional (2D) van der Waals (vdWs) materials have gathered a lot of attention recently. However, the majority of these materials have Curie temperatures that are well below room temperature, making it challenging to incorporate them into device applications. In this work, we synthesized a room-temperature vdW magnetic crystal Fe$_5$GeTe$_2$ with a Curie temperature T$_c = 332$ K, and studie…
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Two-dimensional (2D) van der Waals (vdWs) materials have gathered a lot of attention recently. However, the majority of these materials have Curie temperatures that are well below room temperature, making it challenging to incorporate them into device applications. In this work, we synthesized a room-temperature vdW magnetic crystal Fe$_5$GeTe$_2$ with a Curie temperature T$_c = 332$ K, and studied its magnetic properties by vibrating sample magnetometry (VSM) and broadband ferromagnetic resonance (FMR) spectroscopy. The experiments were performed with external magnetic fields applied along the c-axis (H$\parallel$c) and the ab-plane (H$\parallel$ab), with temperatures ranging from 300 K to 10 K. We have found a sizable Landé g-factor difference between the H$\parallel$c and H$\parallel$ab cases. In both cases, the Landé g-factor values deviated from g = 2. This indicates contribution of orbital angular momentum to the magnetic moment. The FMR measurements reveal that Fe$_5$GeTe$_2$ has a damping constant comparable to Permalloy. With reducing temperature, the linewidth was broadened. Together with the VSM data, our measurements indicate that Fe$_5$GeTe$_2$ transitions from ferromagnetic to ferrimagnetic at lower temperatures. Our experiments highlight key information regarding the magnetic state and spin scattering processes in Fe$_5$GeTe$_2$, which promote the understanding of magnetism in Fe$_5$GeTe$_2$, leading to implementations of Fe$_5$GeTe$_2$ based room-temperature spintronic devices.
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Submitted 14 September, 2021; v1 submitted 24 March, 2021;
originally announced March 2021.
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High conduction hopping behavior induced in transition metal dichalcogenides by percolating defect networks: toward atomically thin circuits
Authors:
Michael G. Stanford,
Pushpa R. Pudasaini,
Elisabeth T. Gallmeier,
Nicholas Cross,
Liangbo Liang,
Akinola Oyedele,
Gerd Duscher,
Masoud Mahjouri-Samani,
Kai Wang,
Kai Xiao,
David B. Geohegan,
Alex Belianinov,
Bobby G. Sumpter,
Philip D. Rack
Abstract:
Atomically thin circuits have recently been explored for applications in next-generation electronics and optoelectronics and have been demonstrated with two-dimensional lateral heterojunctions. In order to form true 2D circuitry from a single material, electronic properties must be spatially tunable. Here, we report tunable transport behavior which was introduced into single layer tungsten diselen…
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Atomically thin circuits have recently been explored for applications in next-generation electronics and optoelectronics and have been demonstrated with two-dimensional lateral heterojunctions. In order to form true 2D circuitry from a single material, electronic properties must be spatially tunable. Here, we report tunable transport behavior which was introduced into single layer tungsten diselenide and tungsten disulfide by focused He$^+$ irradiation. Pseudo-metallic behavior was induced by irradiating the materials with a dose of ~1x10$^{16} He^+/cm^2$ to introduce defect states, and subsequent temperature-dependent transport measurements suggest a nearest neighbor hopping mechanism is operative. Scanning transmission electron microscopy and electron energy loss spectroscopy reveal that Se is sputtered preferentially, and extended percolating networks of edge states form within WSe$_2$ at a critical dose of 1x10$^{16} He^+/cm^2$. First-principles calculations confirm the semiconductor-to-metallic transition of WSe$_2$ after pore and edge defects were introduced by He$^+$ irradiation. The hopping conduction was utilized to direct-write resistor loaded logic circuits in WSe$_2$ and WS$_2$ with a voltage gain of greater than 5. Edge contacted thin film transistors were also fabricated with a high on/off ratio (> 10$^6$), demonstrating potential for the formation of atomically thin circuits.
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Submitted 23 September, 2017; v1 submitted 15 May, 2017;
originally announced May 2017.
